Colloidal InSb Quantum Dots for 1500 nm SWIR Photodetector with Antioxidation of Surface

Non-volatile 2D MoS2/black phosphorus heterojunction photodiodes in the near- to mid-infrared region

Cutting-edge mid-wavelength infrared (MWIR) sensing technologies leverage infrared photodetectors, memory units, and computing units to enhance machine vision. Real-time processing and decision-making challenges emerge with the increasing number of intelligent pixels. However, current operations are limited to in-sensor computing capabilities for near-infrared technology, and high-performance MWIR detectors for multi-state switching functions are lacking. Here, we demonstrate a non-volatile MoS2/black phosphorus (BP) heterojunction MWIR photovoltaic detector featuring a semi-floating gate structure design, integrating near- to mid-infrared photodetection, memory and computing (PMC) functionalities. The PMC device exhibits the property of being able to store a stable responsivity, which varies linearly with the stored conductance state. Significantly, device weights (stable responsivity) can be programmed with power consumption as low as 1.8 fJ, and the blackbody peak responsivity can reach 1.68 A/W for the MWIR band. In the simulation of Faster Region with convolution neural network (CNN) based on the FLIR dataset, the PMC hardware responsivity weights can reach 89% mean Average Precision index of the feature extraction network software weights. This MWIR photovoltaic detector, with its versatile functionalities, holds significant promise for applications in advanced infrared object detection and recognition systems.

Metal-Solvent Complex Formation at the Surface of InP Colloidal Quantum Dots

The surface chemistry of colloidal semiconductor nanocrystals (QDs) profoundly influences their physical and chemical attributes. The insulating organic shell ensuring colloidal stability impedes charge transfer, thus limiting optoelectronic applications. Exchanging these ligands with shorter inorganic ones enhances charge mobility and stability, which is pivotal for using these materials as active layers for LEDs, photodetectors, and transistors. Among those, InP QDs also serve as a model for surface chemistry investigations. This study focuses on group III metal salts as inorganic ligands for InP QDs. We explored the ligand exchange mechanism when metal halide, nitrate, and perchlorate salts of group III (Al, In Ga), common Lewis acids, are used as ligands for the conductive inks. Moreover, we compared the exchange mechanism for two starting model systems: InP QDs capped with myristate and oleylamine as X- and L-type native organic ligands, respectively. We found that all metal halide, nitrate, and perchlorate salts dissolved in polar solvents (such as n-methylformamide, dimethylformamide, dimethyl sulfoxide, H2O) with various polarity formed metal-solvent complex cations [M(Solvent)6]3+ (e.g., [Al(MFA)6]3+, [Ga(MFA)6]3+, [In(MFA)6]3+), which passivated the surface of InP QDs after the removal of the initial organic ligand. All metal halide capped InP/[M(Solvent)6]3+ QDs show excellent colloidal stability in polar solvents with high dielectric constant even after 6 months in concentrations up to 74 mg/mL. Our findings demonstrate the dominance of dissociation-complexation mechanisms in polar solvents, ensuring colloidal stability. This comprehensive understanding of InP QD surface chemistry paves the way for exploring more complex QD systems such as InAs and InSb QDs.

Dicarboxylic Acid-Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short-Wave Infrared Photodetectors

Heavy-metal-free III-V colloidal quantum dots (CQDs) are promising materials for solution-processed short-wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum-size effect tuning of the band gap. However, it has been challenging to achieve uniform InSb CQDs with band gaps below 0.9 eV, as well as to control the surface chemistry of these large-diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to ≥ ${\ge }$ 1400 nm light. Here we adopt solvent engineering to facilitate a diffusion-limited growth regime, leading to uniform CQDs with a band gap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate-halide co-passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25 % at 1400 nm, the highest among III-V CQD photodetectors in this spectral region.