Rational Synthesis of 1D Hyperbranched Heterostructures with Enhanced Optoelectronic Performance

One-dimensional (1D) hyperbranched heterostructures (HBHSs) with abundant interfaces are rendered with various interfacial phenomena and functionalities. However, the rational synthesis of 1D HBHSs with desired spatial architecture and specific interface remains a great challenge. Here, we report a seeded growth method for controlled synthesis of two extraordinary types of HBHSs, in which high-intensity of CdS branches selectively grow on 1D nanowire (NW) trunks with different growth behaviors. The composition of the HBHSs can be further tuned by combining with cation exchange method, which enriches the variety of the HBHSs. The optoelectronic devices based on a single HBHS were fabricated and exhibit a better photoresponse performance compared with that of a single NW trunk. This advance provides a strategy for the controlled synthesis HBHSs with complex morphology and offers a platform for exploring their applications for photo harvesting and conversion.

Exfoliated Ultrathin ZnIn2 S4 Nanosheets with Abundant Zinc Vacancies for Enhanced CO2 Electroreduction to Formate

Electrocatalytic conversion of carbon dioxide (CO₂ ) is promising for balancing carbon cycles while producing value-added feedstocks. Herein, ultrathin ZnIn₂ S₄ nanosheets with abundant Zn vacancies are demonstrated for electrochemically reducing CO₂ to formate. Specifically, a partial current density of 245 mA cm^-2 with a near-unity faradaic efficiency of 94 % for formate generation was achieved over the ultrathin ZnIn₂ S₄ nanosheets in a flow cell configuration. Experimental and theoretical results revealed that abundant Zn vacancies in the ultrathin ZnIn₂ S₄ nanosheets with a high electrochemically active surface area synergistically optimized the intermediate binding energy and contributed to the boosted selectivity and activity. This work may provide useful understandings in designing efficient catalysts for selective CO₂ electroreduction.

Shedding Light on the Role of Misfit Strain in Controlling Core-Shell Nanocrystals

Heteroepitaxial modification of nanomaterials has become a powerful means to create novel functionalities for various applications. One of the most elementary factors in heteroepitaxial nanostructures is the misfit strain arising from mismatched lattices of the constituent parts. Misfit strain not only dictates epitaxy kinetics for diversifying nanocrystal morphologies but also provides rational control over materials properties. In recent years, advances in chemical synthesis along with the rapid development of electron microscopy and X-ray diffraction techniques have enabled a substantial understanding of strain-related processes, which offers theoretical foundation and experimental guidance for researchers to refine heteroepitaxial nanostructures and their properties. Herein, recent investigations on heterogeneous core-shell nanocrystals containing misfit strains are summarized, with a focus on the mechanistic understanding of strain and strain-induced effects such as tuning the epitaxial habit, modulating the optical emission, and enhancing the catalytic activity and magnetic coercivity.

Synthesis of WOn -WX2 (n=2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO_n -WX₂ (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO_n nanomaterials. The WO_n -WX₂ heterostructures are composed of WO_2.9 nanoparticles (NPs) or WO_2.7 nanowires (NWs) grown together with single- or few-layer WX₂ nanosheets (NSs). As a proof-of-concept application, the WO_n -WX₂ heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO_2.9 NP-WSe₂ NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.