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Saleem MI, Yang S, Zhi R, Li H, Sulaman M, Chandrasekar PV, Zhang Z, Batool A, Zou B. Self-powered, all-solution processed, trilayer heterojunction perovskite-based photodetectors. NANOTECHNOLOGY 2020; 31:254001. [PMID: 32150737 DOI: 10.1088/1361-6528/ab7de7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-systems and the ultrafast carrier transfer of micro-systems, have a promising role in high-performance photodetectors. In this paper, a highly-sensitive trilayer self-powered perovskite-based photodetector ITO/ZnO (70 nm)/CdS (150 nm)/CsPbBr3 (200 nm)/Au, in which the CdS nanorods (NRs) layer is sandwiched between a ZnO/CsPbBr3 interface to reduce the interfacial charge carriers' recombination and the charge transport resistance, is presented. Due to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current ratio of 106 with a responsivity of 86 mA W-1 and a specific detectivity of 6.2 × 1011 Jones was obtained at zero bias under 85 µW cm-2 405 nm illumination and its rise/decay time at zero bias is 0.3/0.25 s. Therefore, the enhanced device performance strongly suggests the great potential of such a trilayer heterojunction device for use in high-performance perovskite photodetectors.
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Affiliation(s)
- Muhammad Imran Saleem
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic systems, Center for Micro-Nanotechnology, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China. Key Lab of Advanced Optoelectronic Quantum Design and Measurement, Ministry of Education, Beijing Institute of Technology, Beijing 100081, P. R. China
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Chakrabarty P, Gogurla N, Bhandaru N, Ray SK, Mukherjee R. Enhanced performance of hybrid self-biased heterojunction photodetector on soft-lithographically patterned organic platform. NANOTECHNOLOGY 2018; 29:505301. [PMID: 30226471 DOI: 10.1088/1361-6528/aae240] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Nanopatterning of the active layer with feature size comparable to the wavelength of visible light is a popular strategy for improving the performance of optoelectronic devices, as these structures enhance the optical path length by light trapping due to combined contribution of multiple scattering, diffraction, and antireflection. Here, we report the fabrication of ZnO/CdS self-biased heterojunction photodetectors on soft lithographically patterned PEDOT:PSS layers with grating geometry. The present study combines the robustness of inorganic devices along with the convenience of easy patterning capability of an organic PEDOT:PSS layer. Patterns with two different line widths (L P = 350 nm, and Lp = 750 nm) have been used in this study to understand the influence of feature dimension on the device performance. We observe enhanced photoluminescence on patterned devices, in comparison to devices fabricated on flat PEDOT:PSS films, which is attributed to the increased interfacial area between the organic and inorganic layers. The spectral response [R( λ )] and specific detectivity [D * ( λ )] are found to be higher for the devices with Lp = 350 nm as compared to other devices due to enhanced absorption within the structures due to confinement of light, which also results in reduced reflectance in devices with Lp = 350 nm.
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Affiliation(s)
- Poulomi Chakrabarty
- School of Nanoscience and Technology, Indian Institute of Technology Kharagpur, West Bengal, 721302, India. Instability and Soft Patterning Laboratory, Department of Chemical Engineering, Indian Institute of Technology Kharagpur, West Bengal, 721302, India
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Asghary M, Raoof JB, Rahimnejad M, Ojani R. Microbial fuel cell-based self-powered biosensing platform for determination of ketamine as an anesthesia drug in clinical serum samples. JOURNAL OF THE IRANIAN CHEMICAL SOCIETY 2017. [DOI: 10.1007/s13738-017-1245-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
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Chen H, Yu P, Zhang Z, Teng F, Zheng L, Hu K, Fang X. Ultrasensitive Self-Powered Solar-Blind Deep-Ultraviolet Photodetector Based on All-Solid-State Polyaniline/MgZnO Bilayer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:5809-5816. [PMID: 27594337 DOI: 10.1002/smll.201601913] [Citation(s) in RCA: 74] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2016] [Revised: 07/10/2016] [Indexed: 05/14/2023]
Abstract
A high sensitivity self-powered solar-blind photodetector is successfully constructed based on the polyaniline/MgZnO bilayer. The maximum responsivity of the photodetector is 160 μA W-1 at 250 nm under 0 V bias. The device also exhibits a high on/off ratio of ≈104 under 250 nm illumination at a relatively weak light intensity of 130 μW cm-2 without any power.
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Affiliation(s)
- Hongyu Chen
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Pingping Yu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zhenzhong Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China
| | - Feng Teng
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Lingxia Zheng
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Kai Hu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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Huang Y, Zhu M, Huang Y, Pei Z, Li H, Wang Z, Xue Q, Zhi C. Multifunctional Energy Storage and Conversion Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:8344-8364. [PMID: 27434499 DOI: 10.1002/adma.201601928] [Citation(s) in RCA: 151] [Impact Index Per Article: 16.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2016] [Revised: 05/27/2016] [Indexed: 05/19/2023]
Abstract
Multifunctional energy storage and conversion devices that incorporate novel features and functions in intelligent and interactive modes, represent a radical advance in consumer products, such as wearable electronics, healthcare devices, artificial intelligence, electric vehicles, smart household, and space satellites, etc. Here, smart energy devices are defined to be energy devices that are responsive to changes in configurational integrity, voltage, mechanical deformation, light, and temperature, called self-healability, electrochromism, shape memory, photodetection, and thermal responsivity. Advisable materials, device designs, and performances are crucial for the development of energy electronics endowed with these smart functions. Integrating these smart functions in energy storage and conversion devices gives rise to great challenges from the viewpoint of both understanding the fundamental mechanisms and practical implementation. Current state-of-art examples of these smart multifunctional energy devices, pertinent to materials, fabrication strategies, and performances, are highlighted. In addition, current challenges and potential solutions from materials synthesis to device performances are discussed. Finally, some important directions in this fast developing field are considered to further expand their application.
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Affiliation(s)
- Yan Huang
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China
| | - Minshen Zhu
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China
| | - Yang Huang
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China
| | - Zengxia Pei
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China
| | - Hongfei Li
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China
| | - Zifeng Wang
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China
| | - Qi Xue
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China
| | - Chunyi Zhi
- Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, S.A.R., China.
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518000, China.
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Su L, Zhao ZX, Li HY, Yuan J, Wang ZL, Cao GZ, Zhu G. High-Performance Organolead Halide Perovskite-Based Self-Powered Triboelectric Photodetector. ACS NANO 2015; 9:11310-11316. [PMID: 26469207 DOI: 10.1021/acsnano.5b04995] [Citation(s) in RCA: 63] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report a MAPbI3-based self-powered photodetector (SPPD). It has a dual sensing mechanism that relies on the joint properties of a photoelectric effect and a triboelectric effect of the perovskite material. Both the photoconductivity and the surface triboelectric density of the MAPbI3-based composite thin film are significantly altered upon solar illumination, which results in considerable reduction of the output voltage. The SPPD exhibits excellent responsivity (7.5 V W(-1)), rapid response time (<80 ms), great repeatability, and broad detection range that extends from UV to visible regions. This work presents a route to designing high-performance self-powered photodetectors from the aspect of materials.
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Affiliation(s)
- Li Su
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Zhen Xuan Zhao
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Hua Yang Li
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Jian Yuan
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- Department of Materials and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Guo Zhong Cao
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- Department of Materials and Engineering, University of Washington , Seattle, Washington 98195-2120, United States
| | - Guang Zhu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
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Hong Q, Cao Y, Xu J, Lu H, He J, Sun JL. Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array. ACS APPLIED MATERIALS & INTERFACES 2014; 6:20887-20894. [PMID: 25383662 DOI: 10.1021/am5054338] [Citation(s) in RCA: 73] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
A new self-powered broadband photodetector was fabricated by coating an n-silicon nanowire (n-Si NW) array with a layer of p-cupric oxide (CuO) nanoflakes through a new simple solution synthesis method. The p-n heterojunction shows excellent rectification characteristics in the dark and distinctive photovoltaic behavior under broadband light illumination. The photoresponse of the detector at zero bias voltage shows that this self-powered photodetector is highly sensitive to visible and near-infrared light illuminations, with excellent stability and reproducibility. Ultrafast response rise and recovery times of 60 and 80 μs, respectively, are shown by the CuO based nanophotodetector. In addition, the broadband photodetector can also provide a rapid binary response, with current changing from positive to negative upon illumination under a small bias. The binary response arises from the photovoltaic behavior and the low turn-on voltage of the CuO/Si NW device. These properties make the CuO/Si NW broadband photodetector suitable for applications that require high response speeds and self-sufficient functionality.
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Affiliation(s)
- Qingshui Hong
- Functional Nanomaterials Laboratory, Center for Micro/Nanomaterials and Technology and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences (CAS) , Beijing 100190, China
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Chen R, Zhu P, Deng L, Zhao T, Sun R, Wong C. Effect of Aluminum Doping on the Growth and Optical and Electrical Properties of ZnO Nanorods. Chempluschem 2014. [DOI: 10.1002/cplu.201300398] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Ruiqiang Chen
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen 518055 (P. R. China)
| | - Pengli Zhu
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen 518055 (P. R. China)
- School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, GA 30332 (USA)
| | - Libo Deng
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen 518055 (P. R. China)
| | - Tao Zhao
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen 518055 (P. R. China)
| | - Rong Sun
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen 518055 (P. R. China)
| | - Chingping Wong
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen 518055 (P. R. China)
- School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, GA 30332 (USA)
- Department of Electronics Engineering, The Chinese University of Hong Kong, Shatin NT, Hong Kong SAR (P. R. China)
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Arbitrary multicolor photodetection by hetero-integrated semiconductor nanostructures. Sci Rep 2014; 3:2368. [PMID: 23917790 PMCID: PMC3734442 DOI: 10.1038/srep02368] [Citation(s) in RCA: 36] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2013] [Accepted: 07/19/2013] [Indexed: 11/11/2022] Open
Abstract
The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors.
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Wang X, Liu B, Liu R, Wang Q, Hou X, Chen D, Wang R, Shen G. Fiber-Based Flexible All-Solid-State Asymmetric Supercapacitors for Integrated Photodetecting System. Angew Chem Int Ed Engl 2014; 53:1849-53. [DOI: 10.1002/anie.201307581] [Citation(s) in RCA: 366] [Impact Index Per Article: 33.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2013] [Revised: 11/30/2013] [Indexed: 11/08/2022]
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Wang X, Liu B, Liu R, Wang Q, Hou X, Chen D, Wang R, Shen G. Fiber-Based Flexible All-Solid-State Asymmetric Supercapacitors for Integrated Photodetecting System. Angew Chem Int Ed Engl 2014. [DOI: 10.1002/ange.201307581] [Citation(s) in RCA: 114] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Han L, Bai L, Dong S. Self-powered visual ultraviolet photodetector with Prussian blue electrochromic display. Chem Commun (Camb) 2014; 50:802-4. [DOI: 10.1039/c3cc47080f] [Citation(s) in RCA: 41] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
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Hou X, Liu B, Wang X, Wang Z, Wang Q, Chen D, Shen G. SnO2-microtube-assembled cloth for fully flexible self-powered photodetector nanosystems. NANOSCALE 2013; 5:7831-7837. [PMID: 23887381 DOI: 10.1039/c3nr02300a] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Integrating an energy conversion or storage device with photodetectors into a self-powered system provides a promising route to future devices aimed at reduced size, low weight and high flexibility. We reported here the fabrication of a fully flexible self-powered photodetector nanosystem by integrating a flexible SnO2-cloth-based ultraviolet photodetector with a flexible SnO2-cloth-based lithium-ion battery. The flexible SnO2-cloth-based ultraviolet photodetectors showed fast response to ultraviolet light with excellent flexibility and stability. Using SnO2-on-carbon-cloth as the binder-free anode and commercial LiCoO2/Al foil as the cathode, a flexible full lithium-ion battery was assembled, exhibiting a reversible capacity of 550 mA h g(-1) even after 60 cycles at a current density of 200 mA g(-1) in a potential window of 2-3.8 V. When integrated with and driven by the flexible full battery, the fully flexible self-powered photodetector nanosystem exhibits comparable performance with an analogous externally powered device. Such an integrated nanosystem could serve as a wireless detecting system in large areas, as required in applications such as environmental sensing and biosensing.
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Affiliation(s)
- Xiaojuan Hou
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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Han L, Xu Z, Wang P, Dong S. Facile synthesis of a free-standing Ag@AgCl film for a high performance photocatalyst and photodetector. Chem Commun (Camb) 2013; 49:4953-5. [DOI: 10.1039/c3cc41798k] [Citation(s) in RCA: 45] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Yang Y, Lin L, Zhang Y, Jing Q, Hou TC, Wang ZL. Self-powered magnetic sensor based on a triboelectric nanogenerator. ACS NANO 2012; 6:10378-10383. [PMID: 23061926 DOI: 10.1021/nn304374m] [Citation(s) in RCA: 47] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Magnetic sensors are usually based on the Hall effect or a magnetoresistive sensing mechanism. Here we demonstrate that a nanogenerator can serve as a sensor for detecting the variation of the time-dependent magnetic field. The output voltage of the sensor was found to exponentially increase with increasing magnetic field. The detection sensitivities for the change and the changing rate of magnetic field are about 0.0363 ± 0.0004 ln(mV)/G and 0.0497 ± 0.0006 ln(mV)/(G/s), respectively. The response time and reset time of the sensor are about 0.13 and 0.34 s, respectively. The fabricated sensor has a detection resolution of about 3 G and can work under low frequencies (<0.4 Hz).
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Affiliation(s)
- Ya Yang
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
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