A Solution-Processable Donor-Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices

Achieving efficient and stable blue thermally activated delayed fluorescence organic light-emitting diodes based on four-coordinate fluoroboron emitters by simple substitution molecular engineering

Achieving both high efficiency and high stability in blue thermally activated delayed fluorescence organic light-emitting diodes (TADF-OLEDs) is challenging for practical displays and lighting. Here, we have successfully developed a series of sky-blue to pure-blue emitting donor-acceptor (D-A) type TADF materials featuring a four-coordinated boron with 2,2'-(pyridine-2,6-diyl)diphenolate (dppy) ligands, i.e.1-8. Synergistic engineering of substituents on the phenyl bridge as well as the electronic properties and the attached positions of heteroatom N-donors not only enables fine-tuning of the emission colors, but also modulates the nature and energies of their triplet excited states that are important for the reverse intersystem crossing (RISC). Particularly for the compound with two methyl substituents on the phenyl bridge (compound 8), RISC is significantly facilitated through the vibronic coupling of the energetically close-lying triplet charge transfer (3CT) and the triplet local excited (3LE) states, when compared to analogue 7. Efficient sky-blue to pure-blue OLEDs with electroluminescence peaks (λ EL) at 460-492 nm have been obtained, in which ca. five-fold higher external quantum efficiencies (EQEs) of 18.9% have been demonstrated by 8 than that by 7. Moreover, ca. thirty times longer device operational half-lifetimes (LT50) of 9113 hours for 8 than that for 7 as well as satisfactory LT50 reaching 26 643 hours for 6 at an initial luminance of 100 cd m-2 have also been demonstrated. To the best of our knowledge, these results represent one of the best high-performance blue OLEDs based on tetracoordinated boron TADF emitters. Moreover, the design strategy presented here has provided an attractive strategy for enhancing the device performance of blue TADF-OLEDs.

Resistive Memristors Using Robust Electropolymerized Porous Organic Polymer Films as Switchable Materials

Porous organic polymers (POPs) with inherent porosity, tunable pore environment, and semiconductive property are ideally suitable for application in various advanced semiconductor-related devices. However, owing to the lack of processability, POPs are usually prepared in powder forms, which limits their application in advanced devices. Herein, we demonstrate an example of information storage application of POPs with film form prepared by an electrochemical method. The growth process of the electropolymerized films in accordance with the Volmer-Weber model was proposed by observation of atomic force microscopy. Given the mechanism of the electron transfer system, we verified and mainly emphasized the importance of porosity and interfacial properties of porous polymer films for memristor. As expected, the as-fabricated memristors exhibit good performance on low turn-on voltage (0.65 ± 0.10 V), reliable data storage, and high on/off current ratio (104). This work offers inspiration for applying POPs in the form of electropolymerized films in various advanced semiconductor-related devices.

n-Type boron β-diketone-containing conjugated polymers for high-performance room temperature ammonia sensors

Organic semiconductor (OSC) gas sensors with good mechanical flexibility have received considerable attention as commercial and wearable devices. However, due to poor resistance to moisture and low conductivity, the improvement in the sensing capability of individual OSCs is limited. Reported here is a promising pathway to construct a series of conjugated organic polymers (COPs) with well-defined pyrimidine (Py-COP) or boron β-diketone (BF-COP) units. Unlike traditional metal- or carbon-based hybrid materials, the developed COPs can provide abundant absorption sites for gaseous analytes. As a result, the as-prepared BF-COP results in an excellent sensing response of over 1500 (Ra/Rg) toward 40 ppm of NH3 at room temperature, which is the highest value among those of pristine COPs as n-type sensing materials. Notably, they can maintain their initial sensing responses for two months and 90% relative humidity resistance. Combining the results of in situ Fourier transform infrared spectroscopy and theoretical calculations, the β-diketone skeleton is found to activate the surface electronic environment, verifying that the electron-deficient B ← O groups are adsorption centers. The B/N-heterocyclic decoration effectively modulates the redox properties and electronic interactions, as well as perturbs charge transfer in typical π-conjugated COPs. These results offer insight into developing highly efficient OSC gas sensors, which potentially have broadened sensing applications in the areas of organoboron chemistry.

Effect of terminal substituent of iso-indigo-based materials on the intermolecular stacking and memory performance

Attributed to the characteristics of narrow band gap structural units and full spectral response, iso-indigo is often used as an electron acceptor in organic electronic materials. Organic molecules with large conjugated surfaces and strong intermolecular forces can form ordered stacked structures through self-assembly. In this paper, the self-assembly performances of IDCF3 and IDCN are regulated by changing the end groups. The effects of terminal groups on the resistive memory behaviours and reproducibility are investigated. The properties of IDCF3 and IDCN devices are characterized by UV-VIS spectroscopy, cyclic voltammetry and DSC diffraction. The results show that when the end groups with different steric hindrance are introduced into the ends of the molecules with good backbone plane, the conjugated surfaces of the molecules will bend due to the different steric hindrance of the end groups in the form of cambium and layer-ordered packing, which will affect the threshold voltage and device reproducibility.

Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene-PVA-Composite-Based Aryl Acrylate on ITO-Coated PET

Resistive switching memories are among the emerging next-generation technologies that are possible candidates for in-memory and neuromorphic computing. In this report, resistive memory-switching behavior in solution-processed trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate on an ITO-coated PET device was studied. A sandwich configuration was selected, with silver (Ag) serving as a top contact and trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate and ITO-PET serving as a bottom contact. The current-voltage (I-V) characteristics showed hysteresis behavior and non-zero crossing owing to voltages sweeping from positive to negative and vice versa. The results showed non-zero crossing in the devices' current-voltage (I-V) characteristics due to the nanobattery effect or resistance, capacitive, and inductive effects. The device also displayed a negative differential resistance (NDR) effect. Non-volatile storage was feasible with non-zero crossing due to the exhibition of resistive switching behavior. The sweeping range was -10 V to +10 V. These devices had two distinct states: 'ON' and 'OFF'. The ON/OFF ratios of the devices were 14 and 100 under stable operating conditions. The open-circuit voltages (Voc) and short-circuit currents (Isc) corresponding to memristor operation were explained. The DC endurance was stable. Ohmic conduction and direct tunneling mechanisms with traps explained the charge transport model governing the resistive switching behavior. This work gives insight into data storage in terms of a new conception of electronic devices based on facile and low-temperature processed material composites for emerging computational devices.

A 3D multistage information encryption platform with self-erasure function based on a synergistically shape-deformable and AIE fluorescence-tunable hydrogel

The traditional stored information is statically shown on single 2D planes, which leads to low information storage capacity and secondary information leakage without the proper handling of decrypted information. Developing a 3D multistage information encryption platform with self-erasure function is highly desirable. Here, a novel bilayer hydrogel with synergistic deformation and fluorescence color (SDFC) change is designed for 3D multistage information encryption. The bilayer hydrogel consisting of a shape-deformable hydrogel layer and a fluorescence hydrogel layer with aggregation-induced emission (AIE) properties can exhibit pH-responsive SDFC change. Fluorescence information can be ionoprinted on the fluorescent hydrogel layer based on electrostatic interactions and dynamic covalent bonds. The 2D bilayer hydrogel encoded with information can synergistically produce predesigned 3D shape configuration and enhanced background fluorescence to wrap information, which is only readable after sequential shape recovery with the disappearance of background fluorescence. Furthermore, multistage information can be further obtained by stepwise decryption due to information with differential fluorescence fading rates. The displayed information is automatically self-erased in the end, avoiding the information secondary leakage. This study paves an avenue for broadening conventional 2D single-level information encryption platforms to 3D multistage counterparts with self-erasure and multi-decryption capabilities based on SDFC change of the bilayer hydrogel.

Triarylborane-triphenylamine based luminophore for the mitochondria targeted live cell imaging and colorimetric detection of aqueous fluoride

Bioimaging of subcellular organelles such as mitochondria is crucial for detecting physiological abnormalities induced by fluctuations in the levels of various analytes. Herein, we report the design and synthesis of two novel water-soluble cationic Lewis acid triarylborane-triarylamine conjugates 1 and 2. The optical characteristics of 1 and 2 and their precursor compounds BTPA-NMe2 and BTPA-2NMe2 were evaluated, which show similar absorption and fluorescence spectra, with 1 and 2 exhibiting higher quantum yields of 0.73 and 0.64, respectively, than those of the precursors BTPA-NMe2 and BTPA-2NMe2, indicating the partial disruption of the ICT process and the activation of alternative emission bands in 1 and 2. The live cell imaging ability of compound 2 was examined in HeLa cells using a confocal microscope. Moreover, mitochondrial internalisation using compound 2 was effective and it was found to have high photostability under UV light conditions. Furthermore, compound 2 demonstrated an evident colorimetric response with a colour change to dark yellow in aqueous environments, indicating that it could be used for anion sensing. The spectral changes were observed in UV-visible and fluorescence titration experiments, which were strongly supported by DFT calculations. In short, compound 2 synthesized by us can be exclusively utilized for the selective localization of mitochondria with less cytotoxicity and shows excellent colorimetric response to aqueous inorganic fluoride at levels as low as 0.1 ppm with high selectivity.

Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H...N Interaction and Anion Radicals for Stable ReRAM Performance

The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp² orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.

Synthesis and n-Type Semiconducting Properties of Bis(dioxaborin) Compounds Containing a π-Extended 2,2'-Bithiophene Structure

Bis(dioxaborin) compounds containing π-conjugated systems have been studied as n-type semiconductors for organic field-effect transistors (OFETs). In this study, with the aim of investigating the effect of the extension of the π-conjugation on the n-type semiconducting properties and stability of bis(dioxaborin) compounds, we synthesized new compounds containing 2,2'-bithiophene derivatives extended with an olefin or an acetylene spacer. The absorption maxima of the compounds containing olefin spacers were greatly red-shifted compared with those of the original compound without a π-spacer. The newly synthesized compounds exhibited high electron affinity, and the olefin spacers effectively reduced the on-site Coulomb repulsion in the two-electron reduction of the compounds. An OFET fabricated using one of these compounds having a layer-by-layer crystal structure exhibited n-type semiconductor behavior with a low threshold voltage, most likely due to the small on-site Coulomb repulsion. The electron-transporting properties were investigated by theoretical calculations based on the Marcus theory.

Panchromatic Fluorescence Emission from Thienosquaraines Dyes: White Light Electrofluorochromic Devices

Electrofluorochromic devices (EFCDs) that allow the modulation of the light emitted by electroactive fluorophores are very attractive in the research field of optoelectronics. Here, the electrofluorochromic behaviour of a series of squaraine dyes was studied for the first time. In solutions, all compounds are photoluminescent with maxima located in the range 665-690 nm, characterized by quantum yields ranging from 30% to 4.1%. Squaraines were incorporated in a polymer gel used as an active layer in all-in-one gel switchable EFCDs. An aggregation induced quenching occurs in the gel phase, causing a significant decrease in the emission quantum yield in the device. However, the squaraines containing the thieno groups (thienosquaraines, TSQs) show a panchromatic emission and their electrofluorochromism allows the tuning of the fluorescence intensity from 500 nm to the near infrared. Indeed, the application of a potential difference to the device induces a reversible quenching of their emission that is significantly higher and occurs at shorter switching times for TSQs-based devices compared to the reference squaraine dye (DIBSQ). Interestingly, the TSQs fluorescence spectral profile becomes more structured under voltage, and this could be explained by the shift of the aggregates/monomer equilibrium toward the monomeric species, due to electrochemical oxidation, which causes the disassembling of aggregates. This effect may be used to modulate the colour of the fluorescence light emitted by a device and paves the way for conceiving new electrofluorochromic materials based on this mechanism.

Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer

Molecules with bi-stable electronic transport behaviour have been in upfront research topics of the molecular semiconductor devices in the past few decades due to the use of such materials in resistive data storage devices. Transition metal complexes (TMC) are expected to be potential candidates in regard to the tunable and manifold redox behaviour expecting multiple bulk transport states. Finding alternate mechanisms in such devices with TMC as the active layer materials would revoke the multifaceted approach to the functional gain. We have succeeded in demonstrating write once-read many (WORM) type of resistive memory device using a homoleptic Cobalt(II) (Co(II)) complex with large on/off current ratio ensuring the easy readout process at lower voltage. The advantage of this device was the turn on voltage was found to be the low (<2.7 V) operational voltage and the success ratio of the devices were more than 83%. The durability of the stored data was found to be more than 35,000 seconds which ensures the stability of the bistable state in the fabricated devices. Such ambient stable, solution processable devices are important for the large-scale printable devices. The manuscript describes the preparation, optical and electrochemical characterisation of the metal complex used along with a detailed mechanistic investigations and electrical characterisation of memory device obtained from a stable cobalt complex.

Toward Highly Robust Nonvolatile Multilevel Memory by Fine Tuning of the Nanostructural Crystalline Solid-State Order

Organic resistive memory (ORM) offers great promise for next-generation high-density multilevel-cell (MLC) data storage. However, the fine tuning of crystalline order among its active layer still remains challenging, which largely restricts ORM behavior. Here, an exceptional solid-state transition from disordered orientations to highly-uniform orientation within the ORM layer is facilely triggered via molecular strategic tailoring. Two diketopyrrolopyrrole-based small molecular analogues (NI₁ TDPP and NI₂ TDPP) are demonstrated to display different symmetry. The asymmetric NI₁ TDPP shows an irregular solid-state texture, while the centro-symmetric NI₂ TDPP conforms to an ordered out-of-plane single-crystalline pattern that aligns with the foremost charge transportation along the substrate normal, and exhibits excellent MLC memory characteristics. Moreover, this highly oriented pattern guarantees the large-area film uniformity, leading to the twofold increase in the yield of as-fabricated ORM devices. This study reveals that the solid-state crystalline nanostructural order of organic materials can be controlled by reasonable molecular design to actuate high-performance organic electronic circuits.

Complementary amide-based donor-acceptor with unique nano-scale aggregation, fluorescence, and band gap-lowering properties: a WORM memory device

Organic fluorescent semiconducting nanomaterials have gained widespread research interest owing to their potential applications in the arena of high-tech devices. We designed two pyrazaacene-based compounds, their stacked system, and the role of gluing interactions to fabricate nanomaterials, and determined the prospective band gaps utilizing the density functional theory calculation. The two pyrazaacene derivatives containing complementary amide linkages (-CONH and -NHCO) were efficiently synthesized. The synthesized compounds are highly soluble in common organic solvents as well as highly fluorescent and photostable. The heterocycles and their mixture displayed efficient solvent dependent fluorescence in the visible region of the solar spectrum. Notably, the compounds were associated through complementary NH•••O = C type hydrogen bonding, π-π stacking, and hydrophobic interactions, and thereby afforded nanomaterials with a low band gap. Fascinatingly, the fabricated stacked nanomaterial system exhibited resistive switching behavior, leading to the fabrication of an efficient write-once-read-many-times memory device of crossbar structure.

Synthesis, Photophysical, Photochromic, and Photomodulated Resistive Memory Studies of Dithienylethene-Containing Copper(I) Diimine Complexes

A series of dithienylethene-containing copper(I) diimine complexes have been synthesized and structurally characterized. Systematic studies on their photophysics, electrochemistry, and photochromism have been carried out. The photoinduced color changes of the copper(I) complexes have been achieved by photoexcitation into the metal-to-ligand charge-transfer (MLCT) absorption bands, indicating the photosensitization of light-induced cyclization by the ³MLCT excited state. In addition, by an increase in either the steric bulkiness around the copper(I) center or the structural rigidity of the complexes, the quantum efficiencies of photoluminescence and photocyclization can be effectively enhanced because of suppression of the flattening distortion of the complexes at the MLCT excited state. Furthermore, one of the complexes has been employed as an active component in the fabrication of solution-processed resistive memory devices. Notable lowering of the switching threshold voltage of the binary memory devices has been realized through photocyclization of the dithienylethene-containing copper(I) system.

Boron(iii) β-diketonate-based small molecules for functional non-fullerene polymer solar cells and organic resistive memory devices

A class of acceptor-donor-acceptor chromophoric small-molecule non-fullerene acceptors, 1-4, with difluoroboron(iii) β-diketonate (BF2bdk) as the electron-accepting moiety has been developed. Through the variation of the central donor unit and the modification on the peripheral substituents of the terminal BF2bdk acceptor unit, their photophysical and electrochemical properties have been systematically studied. Taking advantage of their low-lying lowest unoccupied molecular orbital energy levels (from -3.65 to -3.72 eV) and relatively high electron mobility (7.49 × 10-4 cm2 V-1 s-1), these BF2bdk-based compounds have been employed as non-fullerene acceptors in organic solar cells with maximum power conversion efficiencies of up to 4.31%. Moreover, bistable resistive memory characteristics with charge-trapping mechanisms have been demonstrated in these BF2bdk-based compounds. This work not only demonstrates for the first time the use of a boron(iii) β-diketonate unit in constructing non-fullerene acceptors, but also provides more insights into designing organic materials with multi-functional properties.

Chameleon Luminophore for Erasable Encrypted and Decrypted Devices: From Dual-Channel, Programmable, Smart Sensory Lanthanide Hydrogel to Logic Devices

With the rapid development of the data security technology, increasing attention has been paid to programmable memory materials with desirable security. However, most conventional memory devices only have a single switchable color state. In this research, a kind of pH-responsive Chameleon luminescent sensor (Lap@Eu-OFX, Lap = laponite, OFX = ofloxacin) based on lanthanide doping has been fabricated, which can realize highly contrast, dynamically controlled full-color display by changing the pH value of the solution. The advanced programmable security inks, including the green and red luminescent inks, have been prepared and used to protect confidential information. More interestingly, triethylamine and hydrochloric acid are selected as encryption and decryption reagents, which can repeatedly switch the emission color of important data. Hence, the high-tech security inks show great potential in data coding, multiencryption, and decryption under UV light. Furthermore, the designed dual-channel memory device, Lap@Eu-OFX@CS (CS = Chitosan), enables reversible synchronous switching of sol-gel and emission color when converting from acid to base conditions. This can be dynamically monitored by a subsequent logic gate system and can be converted and stored into binary values. This work provides an effective approach for the design and promising application of information encryptor, smart monitor, and circuit controllers.

Controllable and Versatile Electrophoretic Deposition Technology for Monolithic Organic Memory Devices

Scaling up organic nanofilm deposition from the laboratory scale to the industrial scale is an important challenge for the booming organic electronics. Herein, we propose a high-efficiency technology for organic nanofilm deposition called electrophoretic deposition (EPD). EPD was used to produce scalable films based on an ingenious molecular design by introducing the pyridinium group and flexible substituents to versatile solution-processable organic salts. EPD films with an area of 10⁴ mm² and controllable film thickness ranging from 50 nm to 1.55 μm can be easily fabricated using an organic solvent under different deposition conditions. Compared with traditional spin-coated films, the superior electrochemical and mechanical properties of EPD films are ascribed to their compact molecular packing, high purity, and uniform morphology. Evaluation of 2745 device units integrated into a 10⁴ mm² monolithic organic memory device showed that 95% of the device units possessed excellent binary data-storage performance with high stability and reproducibility, small reading bias (1.0 V), and large ON/OFF ratio (>10³). Furthermore, decoating tests of EPD-based films and devices by the process of reverse EPD with switched electrode polarity suggested the potential application for information storage security and active environmental protection by simultaneously separating and recycling metal electrodes and organic materials.

Three-Dimensional Spirothienoquinoline-Based Small Molecules for Organic Photovoltaic and Organic Resistive Memory Applications

A new electron-rich spirothienoquinoline unit, ^tBuSAF-Th, has been developed via incorporation of a thienyl unit instead of a phenyl unit into the six-membered ring of the spiroacridine (SAF) and utilized for the first time as a building block for constructing small-molecule electron donors in organic solar cells (OSCs) and as active layers in organic resistive memory devices. The resulting three-dimensional spirothienoquinoline-containing 1-4 exhibit high-lying highest occupied molecular orbital (HOMO) energy levels. By the introduction of electron-deficient benzochalcogenodiazole linkers, with the chalcogen atoms being varied from O to S and Se, a progressively lower lowest unoccupied molecular orbital (LUMO) energy level has been achieved while keeping the HOMO energy levels similar. This strategy has allowed an enhanced light-harvesting ability without compromising open-circuit voltage (V_oc) in vacuum-deposited bulk heterojunction OSCs using 1-4 as donors and C₇₀ as the acceptor. Good photovoltaic performances with power conversion efficiencies (PCEs) of up to 3.86% and high short-circuit current densities (J_sc) of up to 10.84 mA cm^-2 have been achieved. In addition, organic resistive memory devices fabricated with these donor-acceptor small molecules exhibit binary logic memory behaviors with long retention times and high on/off current ratios. This work indicates that the spirothienoquinoline moiety is a potential building block for constructing multifunctional organic electronic materials.

Interfacial synthesis of a large-area coordination polymer membrane for rewritable nonvolatile memory devices

The facile synthesis of large-area coordination polymer membranes with controlled nanoscale thicknesses is critical towards their applications in information storage electronics. Here, we have reported a facile and substrate-independent interfacial synthesis method for preparing a large-area two-dimensional (2D) coordination polymer membrane at the air–liquid interface. The prepared high-quality 2D membrane could be transferred onto an indium tin oxide (ITO) substrate to construct a nonvolatile memory device, which showed reversible switching with a high ON/OFF current ratio of 10³, good stability and a long retention time. Our discovery of resistive switching with nonvolatile bistability based on the substrate-independent growth of the 2D coordination polymer membrane holds significant promise for the development of solution-processable nonvolatile memory devices with a miniaturized device size.

Stable nonvolatile memory devices with a high ON/OFF current ratio have been realized based on a large-area two-dimensional coordination polymer membrane.

Electroluminochromic Materials and Devices Based on Metal Complexes

Electroluminochromism (ELC) refers to an interesting phenomenon exhibited by a material whose luminescent properties can be reversibly modulated under an electrical stimulus. Such a luminescence-switching property has been widely used in various organic optoelectronic devices because it can simultaneously detect electrical and optical signals. Metal complexes are the promising candidates for ELC materials due to their sensitivity to an electrical stimulus. Herein, recent progress on electroluminochromic materials and devices based on various metal complexes has been summarized. Meanwhile, the applications of these complexes in data recording and security protection have also been discussed. Finally, a brief conclusion and outlook are presented, pointing out that the development of electroluminochromic metal complexes with excellent performance is important because they play a vital role in future intelligent optoelectronic devices.

Rational Modification of Small Molecules with High Device Reproducibility Induced by Improved Interfacial Contact through Intermolecular Hydrogen Bonds

The interfacial contact between the semiconductor and the electrode can effectively affect the device performance through the penetration of metal atoms in semiconductors from the grain boundaries. Thus, how to design a novel molecule with few grain boundaries, namely, large grain size, in solid state is an important task to achieve excellent memory device with high reproducibility. Intermolecular hydrogen-bonding interaction has been proved to be a powerful driving force for molecules assembling into large crystalline aggregates. In this work, the molecular terminals with different numbers of electron-deficient imine (C═N) nitrogen atoms are designed to investigate the effect of hydrogen-bonding interaction on molecular crystalline grains and interfacial contact. X-ray diffraction and grazing-incidence small-angle X-ray scattering measurements verified the superior molecular aggregates and grain boundaries of the molecule with two hydrogen-bonding sites in solid state, donating the corresponding devices showing optimized ternary data-storage performance with lower threshold voltages and higher device reproducibility.

Four-Coordinate Boron Emitters with Tridentate Chelating Ligand for Efficient and Stable Thermally Activated Delayed Fluorescence Organic Light-Emitting Devices

A new class of four-coordinate donor-acceptor fluoroboron-containing thermally activated delayed fluorescence (TADF) compounds bearing a tridentate 2,2'-(pyridine-2,6-diyl)diphenolate (dppy) ligand has been successfully designed and synthesized. Upon varying the donor moieties from carbazole to 10H-spiro[acridine-9,9'-fluorene] to 9,9-dimethyl-9,10-dihydroacridine, these boron derivatives exhibit a wide range of emission colors spanning from blue to yellow with a large spectral shift of 2746 cm^-1 , with high PLQYs of up to 96 % in the doped thin film. Notably, vacuum-deposited organic light-emitting devices (OLEDs) made with these boron compounds demonstrate high performances with the best current efficiencies of 55.7 cd A^-1 , power efficiencies of 58.4 lm W^-1 and external quantum efficiencies of 18.0 %. More importantly, long operational stabilities of the green-emitting OLEDs based on 2 with half-lifetimes of up to 12 733 hours at an initial luminance of 100 cd m^-2 have been realized. This work represents for the first time the design and synthesis of tridentate dppy-chelating four-coordinate boron TADF compounds for long operational stabilities, suggesting great promises for the development of stable boron-containing TADF emitters.

Redox gated polymer memristive processing memory unit

Memristors with enormous storage capacity and superior processing efficiency are of critical importance to overcome the Moore’s Law limitation and von Neumann bottleneck problems in the big data and artificial intelligence era. In particular, the integration of multifunctionalities into a single memristor promises an essential strategy of obtaining a high-performance electronic device that satisfies the nowadays increasing demands of data storage and processing. In this contribution, we report a proof-of-concept polymer memristive processing-memory unit that demonstrates programmable information storage and processing capabilities. By introducing redox active moieties of triphenylamine and ferrocene onto the pendants of fluorene skeletons, the conjugated polymer exhibits triple oxidation behavior and interesting memristive switching characteristics. Associated with the unique electrochemical and electrical behavior, the polymer device is capable of executing multilevel memory, decimal arithmetic operations of addition, subtraction, multiplication and division, as well as simple Boolean logic operations.

Though designing conductive polymers for memory devices is attractive for future low-cost flexible electronics, a proof-of-concept device has yet to be realized. Here, the authors report a redox-gated polymer memristive processing unit with programmable multilevel storage and logic functionalities.

Charge transport through redox active [H7P8W48O184]33- polyoxometalates self-assembled onto gold surfaces and gold nanodots

Polyoxometalates (POMs) are redox-active molecular oxides, which attract growing interest for their integration into nano-devices, such as high-density data storage non-volatile memories. In this work, we investigated the electrostatic deposition of the negatively charged [H7P8W48O184]33- POM onto positively charged 8-amino-1-octanethiol self-assembled monolayers (SAMs) preformed onto gold substrates or onto an array of gold nanodots. The ring-shaped [H7P8W48O184]33- POM was selected as an example of large POMs with high charge storage capacity. To avoid the formation of POM aggregates onto the substrates, which would introduce variability in the local electrical properties, special attention has to be paid to the preformed SAM seeding layer, which should itself be deprived of aggregates. Where necessary, rinsing steps were found to be crucial to eliminate these aggregates and to provide uniformly covered substrates for subsequent POM deposition and electrical characterizations. This especially holds for commercially available gold/glass substrates while these rinsing steps were not essential in the case of template stripped gold of very low roughness. Charge transport through the related molecular junctions and nanodot molecule junctions (NMJs) has been probed by conducting-AFM. We analyzed the current-voltage curves with different models: electron tunneling though the SAMs (Simmons model), transition voltage spectroscopy (TVS) method or molecular single energy level mediated transport (Landauer equation) and we discussed the energetics of the molecular junctions. We concluded to an energy level alignment of the alkyl spacer and POM lowest occupied molecular orbitals (LUMOs), probably due to dipolar effects.

Boron-based stimuli responsive materials

Representative types of boron-based molecular systems that respond to external stimuli such as temperature, pressure, light, or chemicals (oxygen, acid, base etc.) are described in this review article. The boron molecules are classified according to their operating mechanisms, with emphasis on systems, which are based on switchable boron-donor bonds and switchable excited states.

Molecular signature of polyoxometalates in electron transport of silicon-based molecular junctions

Polyoxometalates (POMs) are unconventional electro-active molecules with a great potential for applications in molecular memories, providing efficient processing steps onto electrodes are available. The synthesis of the organic-inorganic polyoxometalate hybrids [PM11O39{Sn(C6H4)C[triple bond, length as m-dash]C(C6H4)N2}]3- (M = Mo, W) endowed with a remote diazonium function is reported together with their covalent immobilization onto hydrogenated n-Si(100) substrates. Electron transport measurements through the resulting densely-packed monolayers contacted with a mercury drop as a top electrode confirms their homogeneity. Adjustment of the current-voltage curves with the Simmon's equation gives a mean tunnel energy barrier ΦPOM of 1.8 eV and 1.6 eV, for the Silicon-Molecules-Metal (SMM) junctions based on the polyoxotungstates (M = W) and polyoxomolybdates (M = Mo), respectively. This follows the trend observed in the electrochemical properties of POMs in solution, the polyoxomolybdates being easier to reduce than the polyoxotungstates, in agreement with lowest unoccupied molecular orbitals (LUMOs) of lower energy. The molecular signature of the POMs is thus clearly identifiable in the solid-state electrical properties and the unmatched diversity of POM molecular and electronic structures should offer a great modularity.

Rise of Conjugated Poly-ynes and Poly(Metalla-ynes): From Design Through Synthesis to Structure-Property Relationships and Applications

Conjugated poly-ynes and poly(metalla-ynes) constitute an important class of new materials with potential application in various domains of science. The key factors responsible for the diverse usage of these materials is their intriguing and tunable chemical and photophysical properties. This review highlights fascinating advances made in the field of conjugated organic poly-ynes and poly(metalla-ynes) incorporating group 4-11 metals. This includes several important aspects of conjugated poly-ynes viz. synthetic protocols, bonding, electronic structure, nature of luminescence, structure-property relationships, diverse applications, and concluding remarks. Furthermore, we delineated the future directions and challenges in this particular area of research.

Amphiphilic Carbazole-Containing Compounds with Lower Critical Solution Temperature Behavior for Supramolecular Self-Assembly and Solution-Processable Resistive Memories

The self-organization and resistive memory performances of a series of newly synthesized water-soluble amphiphilic carbazole derivatives have been explored. Temperature-dependent UV/Vis absorption spectroscopy has been conducted to study the isodesmic self-assembly mechanism of the carbazole-containing compounds. This class of compounds also exhibits interesting lower critical solution temperature properties, which are sensitive to concentration and ionic additives. One of the compounds has been solution-processed and utilized as an active material in the engineering of resistive memory devices, exhibiting a switching voltage of about 3.9 V, a constant ON/OFF current ratio of 10⁶ , and a long retention time of 10⁴  s. The present work demonstrates the versatile potential applications of water-soluble amphiphilic carbazole-containing compounds in supramolecular chemistry and resistive memory devices.

Mussel-Inspired Polydopamine Coating for Flexible Ternary Resistive Memory

In recent years, numerous organic molecules and polymers carrying various functional groups were synthesized and used in fabrication of wearable electronic devices. Compared to previous materials that suffer from poisonousness, stiffness and complex film fabrication, we circumvent above matters by taking advantage of mussel-inspired polydopamine as our active material to realize resistive random access memories (RRAMs). Polydopamine thin films were grown on indium tin oxide glass catalyzed by Cu₂ SO₄ /H₂ O₂ and characterized by Fourier infrared spectroscopy (FT-IR), UV/Vis spectroscopy and scanning electron microscopy. The Al/Polydopamine film/ITO devices possess ternary memory behavior with good ternary device yield with two threshold voltages around 1.50 V and 3.50 V, long data retention over 10⁴  s of continuous reading or 10⁴ pulse reading. The two resistance switchings are attributed to defects functioning as charge traps and the formation of conductive filaments. A flexible device based on Al/polydopamine film/ITO/polyethylene terephthalate retains its ternary memory behavior after being bent with a bending radius of 1.54 cm and bending cycles up to 5000, demonstrating good compatibility and flexibility of polydopamine.

Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device

A novel thiadiazoloquinoxaline (TQ)-based donor-acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (10^5.8:10^3.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.

Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials

Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.

Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Recently, organic-inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide-induced 2D (CH₃ NH₃ )₂ PbI₂ (SCN)₂ perovskite thin film is prepared by using a one-step solution method and fabricated into Al/perovskite film/indium-tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:10³ :10⁷ , long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current-voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere.

Fluorescent and magnetic anti-counterfeiting realized by biocompatible multifunctional silicon nanoshuttle-based security ink

Herein, we present the first example of a silicon nanoshuttle-based security ink simultaneously featuring attractive optical and magnetic properties, suitable for fluorescent and magnetic anti-counterfeiting and encryption. Significantly, the information can be dual-encrypted through multi-color fluorescence and longitudinal (T₁)/transverse (T₂) relaxation contrast by using the silicon nanoshuttle-based security ink. We further demonstrate the feasibility of this high-performance ink for practical application in banknote anti-counterfeiting.

Changing molecular conjugation with a phenazine acceptor for improvement of small molecule-based organic electronic memory performance

Two small molecules with electron-accepting azobenzene or phenazine blocks, were synthesized. The experimental findings suggest that the molecule with larger conjugation may promote the memory performance by an enhanced strong charge transfer effect.

Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.

Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex

The ITO/active material/Au sandwiched devices of a cobalt(ii) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>10³) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.