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Gayathri R, Akshaya M, Imran PM, Nagarajan S. Design of Triphenylamine-based D-π-A Systems for Efficient Ternary WORM Memory Devices. Chemistry 2024; 30:e202402015. [PMID: 38926292 DOI: 10.1002/chem.202402015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2024] [Revised: 06/25/2024] [Accepted: 06/25/2024] [Indexed: 06/28/2024]
Abstract
The impact of various substituent moieties on the molecular framework of a conjugated D-A system in resistive switching memory property has been scrutinized through an array of novel D-π-A molecules. The synthesized molecules with triphenylamine (TPA) as the electron donor and dicyanovinylindanone (IC) as the electron acceptor demonstrated substantial non-volatile WORM (Write-Once Read-Many) memory behaviour with appreciable ON/OFF current ratios up to 105 and a lowest recorded threshold voltage of -0.80 V. The well-balanced combination of these potent electron donating and accepting units culminated in exceptional intramolecular charge transfer interactions and minimal band gap values (1.82-2.31 eV) for the molecules, as demonstrated by photophysical and electrochemical investigations. These factors, coupled with the thin-film morphological studies, corroborated the superior performance of the fabricated devices. A longer retention time of 2000s and an endurance of 100 cycles mark the substantial stability of the memory devices. Moreover, conversion from binary to ternary WORM memory was achieved by the effective tuning of the electronic properties of the D-A systems by various substituent moieties. Molecular simulation studies revealed that the resistive switching phenomenon arises from a synergistic interplay of charge transfer and charge trapping processes within these D-A systems.
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Affiliation(s)
- Ramesh Gayathri
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | - Madanan Akshaya
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | | | - Samuthira Nagarajan
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
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2
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Gayathri R, Akshaya M, Imran PM, Nagarajan S. Modified Donor End Caps for Binary-to-Ternary WORM Memory Conversion in N-Heteroaromatic Systems. Chemphyschem 2024; 25:e202400062. [PMID: 38507519 DOI: 10.1002/cphc.202400062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2024] [Revised: 02/19/2024] [Accepted: 03/20/2024] [Indexed: 03/22/2024]
Abstract
A series of novel D-π-A type organic small molecules have been designed, synthesized, and demonstrated for non-volatile resistive switching WORM memory application. The electron-deficient phenazine and quinoxaline units were coupled with various functionalized triphenylamine end caps to explore the structure-property correlations. The photophysical investigations displayed considerable intramolecular charge transfer, and the electrochemical analysis revealed an optimum band gap of 2.44 to 2.83 eV. These factors and the thin film morphological studies suggest the feasibility of the compounds as better resistive memory devices. All the compounds indicated potent non-volatile resistive switching memory capabilities with ON/OFF ratios ranging from 103 to 104, and the lowest threshold voltage recorded stands at -0.74 V. A longer retention time of 103 s marks the substantial stability of the devices. The phenazine-based compounds outperformed the others in terms of memory performance. Exceptionally, the compound with -CHO substituted triphenylamine exhibited ternary memory performance owing to its multiple traps. The resistive switching mechanism for the devices was validated using density functional theory calculations, which revealed that the integrated effect of charge transfer and charge trapping contributes significantly to the resistive switching phenomena.
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Affiliation(s)
- Ramesh Gayathri
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | - Madanan Akshaya
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
| | | | - Samuthira Nagarajan
- Department of Chemistry, Central University of TamilNadu, Thiruvarur, 610 005, India
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3
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Liu S, Zeng J, Wu Z, Hu H, Xu A, Huang X, Chen W, Chen Q, Yu Z, Zhao Y, Wang R, Han T, Li C, Gao P, Kim H, Baik SJ, Zhang R, Zhang Z, Zhou P, Liu G. An ultrasmall organic synapse for neuromorphic computing. Nat Commun 2023; 14:7655. [PMID: 37996491 PMCID: PMC10667342 DOI: 10.1038/s41467-023-43542-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2023] [Accepted: 11/13/2023] [Indexed: 11/25/2023] Open
Abstract
High-performance organic neuromorphic devices with miniaturized device size and computing capability are essential elements for developing brain-inspired humanoid intelligence technique. However, due to the structural inhomogeneity of most organic materials, downscaling of such devices to nanoscale and their high-density integration into compact matrices with reliable device performance remain challenging at the moment. Herein, based on the design of a semicrystalline polymer PBFCL10 with ordered structure to regulate dense and uniform formation of conductive nanofilaments, we realize an organic synapse with the smallest device dimension of 50 nm and highest integration size of 1 Kb reported thus far. The as-fabricated PBFCL10 synapses can switch between 32 conductance states linearly with a high cycle-to-cycle uniformity of 98.89% and device-to-device uniformity of 99.71%, which are the best results of organic devices. A mixed-signal neuromorphic hardware system based on the organic neuromatrix and FPGA controller is implemented to execute spiking-plasticity-related algorithm for decision-making tasks.
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Affiliation(s)
- Shuzhi Liu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jianmin Zeng
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Zhixin Wu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Han Hu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ao Xu
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China
| | - Xiaohe Huang
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Weilin Chen
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qilai Chen
- School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, China
| | - Zhe Yu
- School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, China
| | - Yinyu Zhao
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Rong Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Tingting Han
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China
| | - Chao Li
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China
| | - Pingqi Gao
- School of Materials, Sun Yat-Sen University, Guangzhou, Guangdong, 510275, China
| | - Hyunwoo Kim
- School of Electronic and Electrical Engineering, Hankyong National University, Anseong-si, Gyeonggi-do, 17579, Korea
| | - Seung Jae Baik
- School of Electronic and Electrical Engineering, Hankyong National University, Anseong-si, Gyeonggi-do, 17579, Korea
| | - Ruoyu Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China.
| | - Zhang Zhang
- School of Microelectronics, Hefei University of Technology, Hefei, 230601, China.
| | - Peng Zhou
- State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China.
| | - Gang Liu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
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Dou F, Zhao X, Gao M, He Z, Wang S, Liu H, Wang S, Wang C. Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites. MACROMOL CHEM PHYS 2022. [DOI: 10.1002/macp.202200104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Feng Dou
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Xiaofeng Zhao
- Heilongjiang Provincial Key Laboratory of Micro‐nano Sensitive Devices and Systems Heilongjiang University Harbin 150080 P. R. China
| | - Meng Gao
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Zhaohua He
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Shuao Wang
- State Key Laboratory of Radiation Medicine and Protection School for Radiological and Interdisciplinary Sciences (RAD‐X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions Soochow University Suzhou 215123 P. R. China
| | - Hanzhou Liu
- State Key Laboratory of Radiation Medicine and Protection School for Radiological and Interdisciplinary Sciences (RAD‐X) and Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions Soochow University Suzhou 215123 P. R. China
| | - Shuhong Wang
- School of Chemical Engineering and Materials Heilongjiang University Harbin 150080 P. R. China
| | - Cheng Wang
- School of Chemical Engineering and Materials Key Laboratory of Functional Inorganic Material Chemistry Ministry of Education Heilongjiang University Harbin 150080 P. R. China
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Shen J, Xue F, Wang G, Li Y, Dong H, Zhang Q. Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H...N Interaction and Anion Radicals for Stable ReRAM Performance. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8218-8225. [PMID: 35107274 DOI: 10.1021/acsami.1c23654] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The D-A structured small-molecule-based resistive random-access memory (ReRAM) device has been well-researched in the last decade, and the switching mechanism was mainly induced by the intramolecular/intermolecular charge transfer processes from the donors to the acceptors. However, in the previous work, some small molecules with pristine electron acceptors in the backbone could still show the typical memory behaviors, of which the switching mechanism is still ambiguous. In this work, two 1,2,4,5-tetrazine based n-type small-molecular isomers, 2-DPTZ and 4-DPTZ, with the same electron acceptor, 1,2,4,5-tetrazine and pyridine, are chosen to investigate the isomeric effects on molecular packing, switching mechanism, and memory performance. Because of the abundant nitrogen atoms with a localized lone pair of electrons in the sp2 orbital, 2-DPTZ and 4-DPTZ compounds could self-assemble into a long-range ordered molecular packing through intermolecular C-H...N interactions, affording effective transporting tunnels for charge-carrier transport. As expected, the sandwich-structured ITO/2-DPTZ or 4-DPTZ/Al memory devices both showed binary memory characteristics, with 2-DPTZ based memory devices showing the write once read many times (WORM) memory behavior and 4-DPTZ based memory devices having the negative differential resistance (NDR) memory performance. These distinct ReRAM properties arose from the different morphologies of 2-DPTZ and 4-DPTZ films that were induced by the different packing styles between the adjacent molecules, as confirmed by X-ray diffraction (XRD) and tapping-mode atomic force microscopy (AFM) height images. Most importantly, the switching mechanism was thought to be attributed to the injected electrons that reduced the neutral molecules of 2-DPTZ and 4-DPTZ to their corresponding anion radicals. Thus, this present work helps us better understand the conducting mechanism of small molecules with pristine electron acceptors in the backbone and provides a supplementary guideline for designing multilevel small molecules to match the structure-stacking-property relationship.
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Affiliation(s)
- Junyu Shen
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
| | - Fei Xue
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
| | - Guan Wang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P.R. China
| | - Yang Li
- School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Huilong Dong
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
| | - Qijian Zhang
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu 215500, P.R. China
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, P.R. China
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Gogoi HJ, Bajpai K, Mallajosyula AT, Solanki A. Advances in Flexible Memristors with Hybrid Perovskites. J Phys Chem Lett 2021; 12:8798-8825. [PMID: 34491743 DOI: 10.1021/acs.jpclett.1c02105] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.
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Affiliation(s)
- Himangshu Jyoti Gogoi
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Kunal Bajpai
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
| | - Arun Tej Mallajosyula
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Ankur Solanki
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
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7
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A new light-responsive resistive random-access memory device containing hydrogen-bonded complexes. J Photochem Photobiol A Chem 2021. [DOI: 10.1016/j.jphotochem.2020.112914] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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8
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Ghosh T, Mondal S, Maiti R, Nawaz SM, Ghosh NN, Dinda E, Biswas A, Maity SK, Mallik A, Maiti DK. Complementary amide-based donor-acceptor with unique nano-scale aggregation, fluorescence, and band gap-lowering properties: a WORM memory device. NANOTECHNOLOGY 2020; 32:025208. [PMID: 33089825 DOI: 10.1088/1361-6528/abba5a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic fluorescent semiconducting nanomaterials have gained widespread research interest owing to their potential applications in the arena of high-tech devices. We designed two pyrazaacene-based compounds, their stacked system, and the role of gluing interactions to fabricate nanomaterials, and determined the prospective band gaps utilizing the density functional theory calculation. The two pyrazaacene derivatives containing complementary amide linkages (-CONH and -NHCO) were efficiently synthesized. The synthesized compounds are highly soluble in common organic solvents as well as highly fluorescent and photostable. The heterocycles and their mixture displayed efficient solvent dependent fluorescence in the visible region of the solar spectrum. Notably, the compounds were associated through complementary NH•••O = C type hydrogen bonding, π-π stacking, and hydrophobic interactions, and thereby afforded nanomaterials with a low band gap. Fascinatingly, the fabricated stacked nanomaterial system exhibited resistive switching behavior, leading to the fabrication of an efficient write-once-read-many-times memory device of crossbar structure.
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Affiliation(s)
- Tanmoy Ghosh
- Department of Chemistry, University of Calcutta, 92 A. P. C. Road, Kolkata 700009, India
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9
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Gao S, Yi X, Shang J, Liu G, Li RW. Organic and hybrid resistive switching materials and devices. Chem Soc Rev 2019; 48:1531-1565. [DOI: 10.1039/c8cs00614h] [Citation(s) in RCA: 211] [Impact Index Per Article: 42.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.
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Affiliation(s)
- Shuang Gao
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Xiaohui Yi
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Jie Shang
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Gang Liu
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices
- Ningbo Institute of Materials Technology and Engineering
- Chinese Academy of Sciences
- Ningbo
- China
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Zhou L, Mao J, Ren Y, Han ST, Roy VAL, Zhou Y. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703126. [PMID: 29377568 DOI: 10.1002/smll.201703126] [Citation(s) in RCA: 47] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2017] [Revised: 11/04/2017] [Indexed: 06/07/2023]
Abstract
Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
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Affiliation(s)
- Li Zhou
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingyu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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11
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Liu Q, Zhao C, Tian G, Ge H. Changing molecular conjugation with a phenazine acceptor for improvement of small molecule-based organic electronic memory performance. RSC Adv 2018; 8:805-811. [PMID: 35538974 PMCID: PMC9076932 DOI: 10.1039/c7ra11932a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2017] [Accepted: 12/13/2017] [Indexed: 11/21/2022] Open
Abstract
Two small molecules with electron-accepting azobenzene or phenazine blocks, were synthesized. The experimental findings suggest that the molecule with larger conjugation may promote the memory performance by an enhanced strong charge transfer effect.
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Affiliation(s)
- Quan Liu
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
| | - Caibin Zhao
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
| | - Guanghui Tian
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
| | - Hongguang Ge
- Shaanxi Province Key Laboratory of Catalytic Foundation and Applications
- School of Chemical and Environmental Science
- Shaanxi University of Technology
- Hanzhong
- China
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12
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Hou X, Cheng XF, Xiao X, He JH, Xu QF, Li H, Li NJ, Chen DY, Lu JM. Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain. Chem Asian J 2017; 12:2278-2283. [DOI: 10.1002/asia.201700706] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2017] [Revised: 06/09/2017] [Indexed: 11/06/2022]
Affiliation(s)
- Xiang Hou
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Xue-Feng Cheng
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Xin Xiao
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Jing-Hui He
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Qing-Feng Xu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Hua Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Na-Jun Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Dong-Yun Chen
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Jian-Mei Lu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
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