1
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Birara S, Saini S, Majumder M, Tiwari SP, Metre RK. A solution-processable benzothiazole-substituted formazanate zinc(II) complex designed for a robust resistive memory device. Dalton Trans 2024. [PMID: 39225166 DOI: 10.1039/d4dt01640h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
A novel mononuclear bis(formazanate)zinc complex (1) based on a redox-active 1-(benzothiazol-2-yl)-5-(2-benzoyl-4-chlorophenyl)-3-phenyl formazan ligand has been synthesized and characterized. Complex 1 was prepared by reacting one equivalent of Zn(OCOCH3)·2H2O with two equivalents of the corresponding formazan derivative. X-ray crystallography was employed to ascertain the solid-state structure of compound 1, and the analysis revealed a distorted octahedral geometry for the complex where the symmetrical ligands exhibit a preference for coordinating with the zinc center in the 'open' form, generating five-membered chelate rings. Moreover, cyclic voltammetry analysis reveals that complex 1 exhibits the capacity for electrochemical reduction as well as oxidation, resulting in the formation of radical anionic (L2Zn-) and dianionic (L2Zn2-) states as well as the oxidation state of 1. Additionally, the developed solution-processable complex 1 was employed as the fundamental building material for resistive switching memory applications. The [FTO/ZnIIL2(1)]/Ag RRAM device demonstrates exceptional resistive memory switching properties, with a substantial ION/IOFF ratio (103), low operational VSET and VRESET (0.9 V and -0.75 V) voltages, excellent endurance stability (100 cycles), and decent retention time (more than 2000 seconds). The findings presented in this study underscore the importance of redox-active formazanate metal complexes for creating promising memory storage devices.
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Affiliation(s)
- Sunita Birara
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
| | - Shalu Saini
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
| | - Moumita Majumder
- Department of Chemistry, School of Science and Environmental Studies, Dr Vishwanath Karad MIT World Peace University, Pune 411038, Maharashtra, India.
| | - Shree Prakash Tiwari
- Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
| | - Ramesh K Metre
- Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan-342030, India.
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2
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Kim MP, Kayal S, Hwang C, Bae J, Kim H, Hwang DG, Jeon MH, Seo JK, Ahn D, Lee W, Seo S, Chun JH, Yu Y, Hong SY. Iterative SuFEx approach for sequence-regulated oligosulfates and its extension to periodic copolymers. Nat Commun 2024; 15:3381. [PMID: 38643182 PMCID: PMC11032359 DOI: 10.1038/s41467-024-47567-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 04/05/2024] [Indexed: 04/22/2024] Open
Abstract
The synthesis of sequence-regulated oligosulfates has not yet been established due to the difficulties in precise reactivity control. In this work, we report an example of a multi-directional divergent iterative method to furnish oligosulfates based on a chain homologation approach, in which the fluorosulfate unit is regenerated. The oligosulfate sequences are determined by high resolution mass spectrometry of the hydrolyzed fragments, and polysulfate periodic copolymers are synthesized by using oligomeric bisfluorosulfates in a bi-directional fashion. The synthetic utility of this iterative ligation is demonstrated by preparing crosslinked network polymers as synthetic adhesive materials.
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Affiliation(s)
- Min Pyeong Kim
- Department of Chemistry, Department of Chemical Engineering, and Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Swatilekha Kayal
- Department of Chemistry, Department of Chemical Engineering, and Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Chiwon Hwang
- Center for Advanced Specialty Chemicals, Korea Research Institute of Chemical Technology (KRICT), Ulsan, 44412, Republic of Korea
| | - Jonghoon Bae
- UNIST Central Research Facility (UCRF), UNIST, Ulsan, 44919, Republic of Korea
| | - Hyunseok Kim
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea
| | - Dong Gyu Hwang
- Department of Chemistry, Department of Chemical Engineering, and Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Min Ho Jeon
- Department of Nuclear Medicine, Yonsei University College of Medicine, Seoul, 03722, Republic of Korea
| | - Jeong Kon Seo
- UNIST Central Research Facility (UCRF), UNIST, Ulsan, 44919, Republic of Korea
| | - Dowon Ahn
- Center for Advanced Specialty Chemicals, Korea Research Institute of Chemical Technology (KRICT), Ulsan, 44412, Republic of Korea
| | - Wonjoo Lee
- Center for Advanced Specialty Chemicals, Korea Research Institute of Chemical Technology (KRICT), Ulsan, 44412, Republic of Korea
| | - Sangwon Seo
- Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Joong-Hyun Chun
- Department of Nuclear Medicine, Yonsei University College of Medicine, Seoul, 03722, Republic of Korea.
| | - Youngchang Yu
- Center for Advanced Specialty Chemicals, Korea Research Institute of Chemical Technology (KRICT), Ulsan, 44412, Republic of Korea.
| | - Sung You Hong
- Department of Chemistry, Department of Chemical Engineering, and Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
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3
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Ma Y, Pan Q, Ou C, Cai Y, Ma X, Liu C. Aryl sulfonyl fluoride synthesis via organophotocatalytic fluorosulfonylation of diaryliodonium salts. Org Biomol Chem 2023; 21:7597-7601. [PMID: 37676649 DOI: 10.1039/d3ob01200j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
A mild and efficient synthesis of various aryl sulfonyl fluorides from diaryliodonium salts under organophotocatalysis via a radical sulfur dioxide insertion and fluorination strategy is presented. Diaryliodonium salts are used as aryl radical precursors, the 1,4-diazabicyclo[2.2.2]octane bis(sulfur dioxide) adduct (DABSO) as a sulfonyl source and cheap KHF2 as a desirable fluorine source, respectively. Notably, the electronic properties of substituents on the aromatic rings in diaryliodonium salts have a significant influence on the reaction yields.
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Affiliation(s)
- Yuyang Ma
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Qijun Pan
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Caiyun Ou
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Yinxia Cai
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Xiaoyu Ma
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Chao Liu
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
- Key Laboratory of Organofluorine Chemistry, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, China
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4
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Pan Q, Liu Y, Pang W, Wu J, Ma X, Hu X, Guo Y, Chen QY, Liu C. Copper-catalyzed three-component reaction of arylhydrazine hydrochloride, DABSO, and NFSI for the synthesis of arenesulfonyl fluorides. Org Biomol Chem 2021; 19:8999-9003. [PMID: 34605502 DOI: 10.1039/d1ob01697k] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
This paper reports a convenient copper-catalyzed three-component conversion of arylhydrazine hydrochlorides to arenesulfonyl fluorides in good yields under mild conditions, using 1,4-diazabicyclo [2.2.2]octane bis(sulfur dioxide) (DABSO) as a sulfonyl source and N-fluorobenzenesulfonimide (NFSI) as a fluorine source based on a radical sulfur dioxide insertion and fluorination strategy. Notably, arylhydrazine hydrochloride is used as a safe precursor of aryl radicals.
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Affiliation(s)
- Qijun Pan
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Yongan Liu
- Key Laboratory of Organofluorine Chemistry, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, China
| | - Wan Pang
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Jingjing Wu
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Xiaoyu Ma
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Xiaojun Hu
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China.
| | - Yong Guo
- Key Laboratory of Organofluorine Chemistry, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, China
| | - Qing-Yun Chen
- Key Laboratory of Organofluorine Chemistry, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, China
| | - Chao Liu
- School of Chemical and Environmental Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai 201418, China. .,Key Laboratory of Organofluorine Chemistry, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, China
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5
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Song Y, Feng G, Sun C, Liang Q, Wu L, Yu X, Lei S, Hu W. Ternary Conductance Switching Realized by a Pillar[5]arene-Functionalized Two-Dimensional Imine Polymer Film. Chemistry 2021; 27:13605-13612. [PMID: 34312929 DOI: 10.1002/chem.202101772] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2021] [Indexed: 02/05/2023]
Abstract
Nowadays, most manufacturing memory devices are based on materials with electrical bistability (i. e., "0" and "1") in response to an applied electric field. Memory devices with multilevel states are highly desired so as to produce high-density and efficient memory devices. Herein, we report the first multichannel strategy to realize a ternary-state memristor. We make use of the intrinsic sub-nanometer channel of pillar[5]arene and nanometer channel of a two-dimensional imine polymer to construct an active layer with multilevel channels for ternary memory devices. Low threshold voltage, long retention time, clearly distinguishable resistance states, high ON/OFF ratio (OFF/ON1/ON2=1 : 10 : 103 ), and high ternary yield (75 %) were obtained. In addition, the flexible memory device based on 2DPTPAZ+TAPB can maintain its stable ternary memory performance after being bent 500 times. The device also exhibits excellent thermal stability and can tolerate a temperature as high as 300 °C. It is envisioned that the results of this work will open up possibilities for multistate, flexible resistive memories with good thermal stability and low energy consumption, and broaden the application of pillar[n]arene.
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Affiliation(s)
- Yaru Song
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Guangyuan Feng
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Chenfang Sun
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Qiu Liang
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Lingli Wu
- Medical College, Northwest Minzu University, Lanzhou, 730000, P. R. China
| | - Xi Yu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Shengbin Lei
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science &, Collaborative Innovation Center of Chemical Science and Engineering, Tianjin University, Tianjin, 300072, P. R. China
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6
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Wu J, Wan H, Zhou S, Gu P, Zhu Y, Xu Q, Lu J. Side-Chain Type Polysulfates: Their Synthesis, AIE Properties and Applications for p-Nitrophenol Detection in Water. Chem Asian J 2021; 16:3202-3208. [PMID: 34402597 DOI: 10.1002/asia.202100758] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 08/12/2021] [Indexed: 11/08/2022]
Abstract
Two small molecular monomers, ph-TPE and ph-TPE-CN, and their homopolymers Poly (ph-TPE) and Poly (ph-TPE-CN) containing tetra phenylethylene and sulfate structures, were synthesized by a sulfur (VI) fluorine exchange click reaction (SuFEx) and radical polymerization. All the monomers and polymers exhibit a typical aggregation-induced emission (AIE) effect both in the solid state and aggregated state. Moreover, based on the intermolecular charge transfer (ICT) effect between the tetra phenylethylene chromophore and p-nitrophenol, both polymers could be used for the selective detection of p-nitrophenol. The detection limit and reactivity coefficient of Poly (ph-TPE) are 0.081 μM and 5.15×104 M-1 , respectively, whereas the detection limit and reactivity coefficient of Poly (ph-TPE-CN) are 0.077 μM and 1.81×104 M-1 , respectively. This can be attributed to the greater sensitivity of Poly (ph-TPE-CN) to p-nitrophenol than that of Poly (ph-TPE). This work provides a new methodology for the preparation and broadening application of side-chain type AIE-active polysulfate fluorescent probes.
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Affiliation(s)
- Jiacheng Wu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Haibo Wan
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Shiyuan Zhou
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Peiyang Gu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yutao Zhu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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7
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Guo J, Zhang Y, Tian G, Ji D, Qi S, Wu D. Effect of a "Zn Bridge" on the Consecutively Tunable Retention Characteristics of Volatile Random Access Memory Materials. Chemistry 2021; 27:12526-12534. [PMID: 34159653 DOI: 10.1002/chem.202101496] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2021] [Indexed: 11/08/2022]
Abstract
Polyimide memory materials with a donor-acceptor structure based on a charge-transfer mechanism exhibit great potential for next-generation information storage technology due to their outstanding high-temperature resistance and good dimensional and chemical stability. Precisely controlling memory performance by limited chemical decoration is one of core challenges in this field. Most reported work mainly focuses on designing novel and elaborate electron donors or acceptors for the expected memory behavior of polyimides; this takes a lot of time and is not always efficacious. Herein, we report a series of porphyrinated copolyimides coPI-Znx (x=5, 10, 20, 50, 80), where x represents the mole percentage of Zn ion in the central core of the porphyrin. Experimental and theoretical analysis indicate that the Zn ion could play a vital bridge role in promoting the formation and stabilization of a charge-transfer complex by enhancing the hybridization of local and charge transfer (HLCT) excitations of porphyrinated polyimides, endowing coPI-Znx with volatile random access memory performance and continuously tunable retention time. This work could provide one simple strategy to precisely regulate memory performance merely by altering the metal content in porphyrinated polyimides.
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Affiliation(s)
- Jiacong Guo
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Yankun Zhang
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Guofeng Tian
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, P. R. China.,Beijing National Laboratory for Molecular Sciences, Beijing, 100190, P. R. China
| | - Shengli Qi
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China.,Changzhou Institute of Advanced Materials, Beijing University of Chemical Technology, Changzhou, 213164, P. R. China
| | - Dezhen Wu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, P. R. China.,Changzhou Institute of Advanced Materials, Beijing University of Chemical Technology, Changzhou, 213164, P. R. China
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Barman BK, Khatua M, Goswami B, Samanta S, Vijayaraghavan RK. Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer. Chem Asian J 2021; 16:1545-1552. [PMID: 33871144 DOI: 10.1002/asia.202100152] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2021] [Revised: 04/12/2021] [Indexed: 02/02/2023]
Abstract
Molecules with bi-stable electronic transport behaviour have been in upfront research topics of the molecular semiconductor devices in the past few decades due to the use of such materials in resistive data storage devices. Transition metal complexes (TMC) are expected to be potential candidates in regard to the tunable and manifold redox behaviour expecting multiple bulk transport states. Finding alternate mechanisms in such devices with TMC as the active layer materials would revoke the multifaceted approach to the functional gain. We have succeeded in demonstrating write once-read many (WORM) type of resistive memory device using a homoleptic Cobalt(II) (Co(II)) complex with large on/off current ratio ensuring the easy readout process at lower voltage. The advantage of this device was the turn on voltage was found to be the low (<2.7 V) operational voltage and the success ratio of the devices were more than 83%. The durability of the stored data was found to be more than 35,000 seconds which ensures the stability of the bistable state in the fabricated devices. Such ambient stable, solution processable devices are important for the large-scale printable devices. The manuscript describes the preparation, optical and electrochemical characterisation of the metal complex used along with a detailed mechanistic investigations and electrical characterisation of memory device obtained from a stable cobalt complex.
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Affiliation(s)
- Biswajit K Barman
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
| | - Manas Khatua
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
| | - Bappaditya Goswami
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
| | - Subhas Samanta
- Department of Chemistry, Indian Institute of Technology Jammu, Jammu, 181221, India
| | - Ratheesh K Vijayaraghavan
- Department of Chemical Sciences, Indian Institute of Science Education and Research Kolkata, West Bengal, India
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Song Y, Zhao L, Yao H, Tian Y, Zhu S, Guan S. Novel Hyperbranched Polyimides Bearing Bis(trifluoromethyl)‐triphenylamine Moiety: Preparation and Rewritable Nonvolatile Memory Behaviours. ChemistrySelect 2021. [DOI: 10.1002/slct.202003923] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Ying Song
- College of Materials Science and Engineering Changchun University of Technology 2055 Yanan Street Changchun 130012 China
| | - Liqun Zhao
- College of Materials Science and Engineering Changchun University of Technology 2055 Yanan Street Changchun 130012 China
| | - Hongyan Yao
- National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer College of Chemistry Jilin University 2699 Qianjin Street Changchun 130012 China
| | - Ye Tian
- National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer College of Chemistry Jilin University 2699 Qianjin Street Changchun 130012 China
| | - Shiyang Zhu
- National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer College of Chemistry Jilin University 2699 Qianjin Street Changchun 130012 China
| | - Shaowei Guan
- National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer College of Chemistry Jilin University 2699 Qianjin Street Changchun 130012 China
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