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Abstract
Large negative differential conductance (NDC) at lower bias regime is a very desirable functional property for single molecular device. Due to the non-conjugated segment separating two conjugated branches, the single thiolated arylethynylene molecule with 9,10-dihydroanthracene core (denoted as TADHA) presents excellent NDC behavior in lower bias regime. Based on the ab initio calculation and non-equilibrium Green’s function formalism, the NDC behavior of TADHA molecular device and the H2O-molecule-adsorption effects are studied systematically. The numerical results show that the NDC behavior of TADHA molecular junction originates from the Stark effect of the applied bias which splits the degeneration of the highest occupied molecular orbital (HOMO) and HOMO-1. The H2O molecule adsorbed on the terminal sulphur atom strongly suppresses the conductance of TADHA molecular device and destroys the NDC behavior in the lower bias regime. Single or separated H2O molecules adsorbed on the backbone of TADHA molecule can depress the energy levels of molecular orbitals, but have little effects on the NDC behavior of the TADHA molecular junction. Aggregate of several H2O molecules adsorbed on one branch of TADHA molecule can dramatically enhance the conductance and NDC behavior of the molecular junction, and result in rectifier behavior.
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4
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Zhang H, Dai X, Guan N, Messanvi A, Neplokh V, Piazza V, Vallo M, Bougerol C, Julien FH, Babichev A, Cavassilas N, Bescond M, Michelini F, Foldyna M, Gautier E, Durand C, Eymery J, Tchernycheva M. Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires. ACS APPLIED MATERIALS & INTERFACES 2016; 8:26198-26206. [PMID: 27615556 PMCID: PMC5054459 DOI: 10.1021/acsami.6b06414] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2016] [Accepted: 09/12/2016] [Indexed: 05/27/2023]
Abstract
A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The -3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.
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Affiliation(s)
- Hezhi Zhang
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
| | - Xing Dai
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
| | - Nan Guan
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
| | - Agnes Messanvi
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
- Université
Grenoble Alpes, Grenoble 38000, France
- “Nanophysique
et Semiconducteurs” group, CEA, INAC-SP2M, 17 rue des Martyrs, Grenoble 38000, France
| | - Vladimir Neplokh
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
| | - Valerio Piazza
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
| | - Martin Vallo
- “Nanophysique
et Semiconducteurs” group, CEA, INAC-SP2M, 17 rue des Martyrs, Grenoble 38000, France
| | - Catherine Bougerol
- Université
Grenoble Alpes, Grenoble 38000, France
- “Nanophysique
et Semiconducteurs” group, CEA, INAC-SP2M, 17 rue des Martyrs, Grenoble 38000, France
| | - François H. Julien
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
| | - Andrey Babichev
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
- ITMO
University, St. Petersburg 197101, Russia
| | - Nicolas Cavassilas
- Aix Marseille
Université, CNRS, Université
de Toulon, IM2NP UMR
7334, 13397 Marseille, France
| | - Marc Bescond
- Aix Marseille
Université, CNRS, Université
de Toulon, IM2NP UMR
7334, 13397 Marseille, France
| | - Fabienne Michelini
- Aix Marseille
Université, CNRS, Université
de Toulon, IM2NP UMR
7334, 13397 Marseille, France
| | - Martin Foldyna
- LPICM-CNRS,
Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, Palaiseau 91128, France
| | - Eric Gautier
- Université
Grenoble Alpes, Grenoble 38000, France
- CEA,
INAC-SPINTEC, 38000 Grenoble, France
| | - Christophe Durand
- Université
Grenoble Alpes, Grenoble 38000, France
- “Nanophysique
et Semiconducteurs” group, CEA, INAC-SP2M, 17 rue des Martyrs, Grenoble 38000, France
| | - Joël Eymery
- “Nanophysique
et Semiconducteurs” group, CEA, INAC-SP2M, 17 rue des Martyrs, Grenoble 38000, France
| | - Maria Tchernycheva
- Centre
de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay, Orsay 91405, France
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5
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Xiang D, Wang X, Jia C, Lee T, Guo X. Molecular-Scale Electronics: From Concept to Function. Chem Rev 2016; 116:4318-440. [DOI: 10.1021/acs.chemrev.5b00680] [Citation(s) in RCA: 816] [Impact Index Per Article: 102.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
Affiliation(s)
- Dong Xiang
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
- Key
Laboratory of Optical Information Science and Technology, Institute
of Modern Optics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China
| | - Xiaolong Wang
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
| | - Chuancheng Jia
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
| | - Takhee Lee
- Department
of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Xuefeng Guo
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
- Department
of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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6
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Xiang D, Lee T, Kim Y, Mei T, Wang Q. Origin of discrete current fluctuations in a single molecule junction. NANOSCALE 2014; 6:13396-13401. [PMID: 25271483 DOI: 10.1039/c4nr03480e] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A series of fresh molecular junctions at a single molecule level were created and the current fluctuations were studied as electrons passed through them. Our results indicate that telegraph-like current fluctuations at room temperature neither originate from electron trapping/detrapping processes nor from molecule re-conformation. Our results will be helpful in better understanding the mechanism of current fluctuations.
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Affiliation(s)
- Dong Xiang
- School of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China
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8
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Xiang D, Jeong H, Lee T, Mayer D. Mechanically controllable break junctions for molecular electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:4845-67. [PMID: 23913697 DOI: 10.1002/adma.201301589] [Citation(s) in RCA: 105] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2013] [Indexed: 05/13/2023]
Abstract
A mechanically controllable break junction (MCBJ) represents a fundamental technique for the investigation of molecular electronic junctions, especially for the study of the electronic properties of single molecules. With unique advantages, the MCBJ technique has provided substantial insight into charge transport processes in molecules. In this review, the techniques for sample fabrication, operation and the various applications of MCBJs are introduced and the history, challenges and future of MCBJs are discussed.
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Affiliation(s)
- Dong Xiang
- Department of Physics and Astronomy, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-747, Korea
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9
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Xiang D, Jeong H, Kim D, Lee T, Cheng Y, Wang Q, Mayer D. Three-terminal single-molecule junctions formed by mechanically controllable break junctions with side gating. NANO LETTERS 2013; 13:2809-2813. [PMID: 23701385 DOI: 10.1021/nl401067x] [Citation(s) in RCA: 42] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Molecules are promising candidates for electronic device components because of their small size, chemical tunability, and ability to self-assemble. A major challenge when building molecule-based electronic devices is forming reliable molecular junctions and controlling the electrical current through the junctions. Here, we report a three-terminal junction that combines both the ability to form a stable single-molecule junction via the mechanically controllable break junction (MCBJ) technique and the ability to shift the energy levels of the molecule by gating. Using a noncontact side-gate electrode located a few nanometers away from the molecular junction, the conductance of the molecule could be dramatically modulated because the electrical field applied to the molecular junction from the side gate changed the molecular electronic structure, as confirmed by the ab initio calculations. Our study will provide a new design for mechanically stable single-molecule transistor junctions fabricated by the MCBJ method.
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Affiliation(s)
- Dong Xiang
- Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
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