Thermal Decomposition of Branched Silanes: A Computational Study on Mechanisms

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition

Hydrosilanes are highly attractive compounds, which can be processed as liquids with printing technology to amorphous silicon films on nearly any solid substrate. The silicon layers can be processed for electronic devices like transistors or thin-film solar cells. The endothermic character of hydrosilanes with their positive enthalpies of formation results in favorable properties for processing. The larger the molecules, the lower their decomposition temperature and the higher their photoactivity. Cyclic hydrosilanes such as cyclopentasilane and cyclohexasilane can be easily deposited. The branched neopentasilane is more difficult to deposit but yields better-quality films after processing. The key challenge is the complex synthesis of the precursors and the hydrosilanes. The available preparative methods are presented in this review and their advantages and disadvantages are evaluated. The following synthesis methods are presented and discussed in this article: Wurtz coupling and other reductive coupling processes, dehydrogenative coupling of silanes, plasma synthesis of chlorinated polysilanes, amine- or chloride-induced disproportionations, and transformation of monosilane to higher silanes. Plasma synthesis is already carried out today as a continuous industrial process. The most effective synthesis methods in the laboratory are currently amine- and chloride-induced disproportionations. There is a great need to further optimize the syntheses of hydrosilanes and to develop new simple synthesis variants.

Modelling the non-local thermodynamic equilibrium spectra of silylene (SiH2)

This paper sets out a robust methodology for modelling spectra of polyatomic molecules produced in reactive or dissociative environments, with vibrational populations outside local thermal equilibrium (LTE). The methodology is based on accurate, extensive ro-vibrational line lists containing transitions with high vibrational excitations and relies on the detailed ro-vibrational assignments. The developed methodology is applied to model non-LTE IR and visible spectra of silylene (SiH2) produced in a decomposition of disilane (Si2H6), a reaction of technological importance. Two approaches for non-LTE vibrational populations of the product SiH2 are introduced: a simplistic 1D approach based on the Harmonic approximation and a full 3D model incorporating accurate vibrational wavefunctions of SiH2 computed variationally with the TROVE (Theoretical ROVibrational Energy) program. We show how their non-LTE spectral signatures can be used to trace different reaction channels of molecular dissociations.

Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon

A synthetic method is presented for the production of isotetrasilane, a higher order perhydridosilane, with the purity and volume necessary for use in extensive studies of the chemical vapor deposition (CVD) of epitaxial silicon (e-Si) thin films. The chemical characteristics, thermodynamic properties, and epitaxial film growth of isotetrasilane are compared with those of other perhydridosilanes. A film-growth mechanism distinct from linear perhydridosilanes H(SiH₂) _nH, where n ≤ 4, is reported. Preliminary findings are summarized for CVD of both unstrained e-Si and strained e-Si doped with germanium (Ge) and carbon (C) employing isotetrasilane as the source precursor at temperatures of 500-550 °C. The results suggest that bis(trihydridosilyl)silylene is the likely deposition intermediate under processing conditions in which gas-phase depletion reactions are not observed.

Group 14 inorganic hydrocarbon analogues

This Review article deals with the synthesis and properties of inorganic hydrocarbon analogues: binary chemical species that contain heavier Group 14 elements (Si, Ge, Sn or Pb) and hydrogen as components. Rapid advances in our general knowledge of these species have enabled the development of industrially relevant processes such as the hydrosilylation of unsaturated substrates and the chemical vapor deposition of semi-conducting films.

Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.