Tapering-free monocrystalline Ge nanowires synthesized via plasma-assisted VLS using In and Sn catalysts

In and Sn are the type of catalysts which do not introduce deep level electrical defects within the bandgap of germanium (Ge). However, Ge nanowires produced using these catalysts usually have a large diameter, a tapered morphology, and mixed crystalline and amorphous phases. In this study, we show that plasma-assisted vapor-liquid-solid (PA-VLS) method can be used to synthesize Ge nanowires. Moreover, at certain parameter domains, the sidewall deposition issues of this synthesis method can be avoided and long, thin tapering-free monocrystalline Ge nanowires can be obtained with In and Sn catalysts. We find two quite different parameter domains where Ge nanowire growth can occur via PA-VLS using In and Sn catalysts: (i) a low temperature-low pressure domain, below ∼235 °C at a GeH₄partial pressure of ∼6 mTorr, where supersaturation in the catalyst occurs thanks to the low solubility of Ge in the catalysts, and (ii) a high temperature-high pressure domain, at ∼400 °C and a GeH₄partial pressure above ∼20 mTorr, where supersaturation occurs thanks to the high GeH₄concentration. While growth at 235 °C results in tapered short wires, operating at 400 °C enables cylindrical nanowire growth. With the increase of growth temperature, the crystalline structure of the nanowires changes from multi-crystalline to mono-crystalline and their growth rate increases from ∼0.3 nm s^-1to 5 nm s^-1. The cylindrical Ge nanowires grown at 400°C usually have a length of few microns and a radius of around 10 nm, which is well below the Bohr exciton radius in bulk Ge (24.3 nm). To explain the growth mechanism, a detailed growth model based on the key chemical reactions is provided.

Facile Synthesis of Peapod-Like Cu3 Ge/Ge@C as a High-Capacity and Long-Life Anode for Li-Ion Batteries

As anode materials for high-performance Li-ion batteries, peapod-like Ge-based composites, including Ge, a Li-inactive conducting Cu₃ Ge, and a porous carbon matrix are synthesized simply by annealing CuGeO₃ @dopamine in a H₂ /Ar atmosphere. The introduction of the carbon layer and inactive alloying phase Cu₃ Ge not only enhances the electrical conductivity of the Ge anode, but also reduces the volume change of Ge during the cell cycle as a buffer. In particular, the anode of this peapod-like Cu₃ Ge/Ge@C shows an excellent long cycle life as well as outstanding capacity performance, with a discharge specific capacity up to 934 mA h g^-1 after 500 cycles.

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Highly oriented Ge_0.81Sn_0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as a sole source of Sn for the formation of the metastable Ge_1-xSn_x semiconductor material. The strain relaxation for a lattice mismatch of ε = 2.94% between the Ge (111) substrate and the constant Ge_0.81Sn_0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge_1-xSn_x structures with diameters in the micrometer range show a 5-fold longer compositional gradient very similar to epitaxial thin-film growth. Effects of the Sn growth promoters' dimensions on the morphological and compositional evolution of Ge_1-xSn_x are described. The temperature- and laser power-dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge_0.81Sn_0.19 (e.g., band gap of 0.3 eV at room temperature). These materials  hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid- to near-IR photonics.

Group IVA Element (Si, Ge, Sn)-Based Alloying/Dealloying Anodes as Negative Electrodes for Full-Cell Lithium-Ion Batteries

To satisfy the increasing energy demands of portable electronics, electric vehicles, and miniaturized energy storage devices, improvements to lithium-ion batteries (LIBs) are required to provide higher energy/power densities and longer cycle lives. Group IVA element (Si, Ge, Sn)-based alloying/dealloying anodes are promising candidates for use as electrodes in next-generation LIBs owing to their extremely high gravimetric and volumetric capacities, low working voltages, and natural abundances. However, due to the violent volume changes that occur during lithium-ion insertion/extraction and the formation of an unstable solid electrolyte interface, the use of Group IVA element-based anodes in commercial LIBs is still a great challenge. Evaluating the electrochemical performance of an anode in a full-cell configuration is a key step in investigating the possible application of the active material in LIBs. In this regard, the recent progress and important approaches to overcoming and alleviating the drawbacks of Group IVA element-based anode materials are reviewed, such as the severe volume variations during cycling and the relatively brittle electrode/electrolyte interface in full-cell LIBs. Finally, perspectives and future challenges in achieving the practical application of Group IVA element-based anodes in high-energy and high-power-density LIB systems are proposed.

Efficient Carrier Multiplication in Colloidal Silicon Nanorods

Auger recombination lifetimes, absorption cross sections, and the quantum yields of carrier multiplication (CM), or multiexciton generation (MEG), were determined for solvent-dispersed silicon (Si) nanorods using transient absorption spectroscopy (TAS). Nanorods with an average diameter of 7.5 nm and aspect ratios of 6.1, 19.3, and 33.2 were examined. Colloidal Si nanocrystals of similar diameters were also studied for comparison. The nanocrystals and nanorods were passivated with organic ligands by hydrosilylation to prevent surface oxidation and limit the effects of surface trapping of photoexcited carriers. All samples used in the study exhibited relatively efficient photoluminescence. The Auger lifetimes increased with nanorod length, and the nanorods exhibited higher CM quantum yield and efficiency than the nanocrystals with a similar band gap energy E_g. Beyond a critical length, the CM quantum yield decreases. Nanorods with the aspect ratio of 19.3 had the highest CM quantum yield of 1.6 ± 0.2 at 2.9E_g, which corresponded to a multiexciton yield that was twice as high as observed for the spherical nanocrystals.

Solution synthesis of lead seeded germanium nanowires and branched nanowire networks and their application as Li-ion battery anodes

Herein, we report the high density growth of lead seeded germanium nanowires (NWs) and their development into branched nanowire networks suitable for application as lithium ion battery anodes. The synthesis of the NWs from lead seeds occurs simultaneously in both the liquid zone (solution-liquid-solid (SLS) growth) and solvent rich vapor zone (vapor-liquid-solid (VLS) growth) of a high boiling point solvent growth system. The reaction is sufficiently versatile to allow for the growth of NWs directly from either an evaporated catalyst layer or from pre-defined nanoparticle seeds and can be extended to allowing extensive branched nanowire formation in a secondary reaction where these seeds are coated onto existing wires. The NWs are characterized using TEM, SEM, XRD and DF-STEM. Electrochemical analysis was carried out on both the single crystal Pb-Ge NWs and the branched Pb-Ge NWs to assess their suitability for use as anodes in a Li-ion battery. Differential capacity plots show both the germanium wires and the lead seeds cycle lithium and contribute to the specific capacity that is approximately 900 mAh g^-1 for the single crystal wires, rising to approximately 1100 mAh g^-1 for the branched nanowire networks.

Polymer-mediated metallophilic interactions for gram-scale production, high-yield (∼90%) synthesis of ultrathin bismuth nanowires

High-yields (∼90%) of ultrathin (<4 nm) bismuth nanowires (Bi UNWs) were obtained by reducing the polymeric strands of oleylamine-bismuth 2-ethylhexanoate complexes formed via metallophilic interactions with the mediation of a copolymer (PVP–HDE).

Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium

Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more difficult Ge-Si transition enabled by inclusion of a quench sequence in the reaction. This approach allows for alternating between pure Si and pure Ge segments along the entire nanowire length with good control of the respective segment dimensions. The multisegment heterostructure nanowires presented are Ge-Si, Si-Ge-Si, Ge-Si-Ge, Si-Ge-Si-Ge, and Si-Ge-Si-Ge-Si-Ge. The interfacial abruptness of the Ge to Si interface is also determined through the use of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy.

Microwave-assisted solution-liquid-solid growth of Ge1-xSnx nanowires with high tin content

A microwave assisted growth procedure for the first bottom-up synthesis of germanium tin alloy (Ge1-xSnx) nanowires with constant diameter along their axis was developed. Ge1-xSnx nanowires with mean diameters of 190 ± 30 nm and a homogeneous distribution of 12.4 ± 0.7% Sn in Ge have been synthesized.

Synthesis and Ligand Exchange of Thiol-Capped Silicon Nanocrystals

Hydride-terminated silicon (Si) nanocrystals were capped with dodecanethiol by a thermally promoted thiolation reaction. Under an inert atmosphere, the thiol-capped nanocrystals exhibit photoluminescence (PL) properties similar to those of alkene-capped Si nanocrystals, including size-tunable emission wavelength, relatively high quantum yields (>10%), and long radiative lifetimes (26-280 μs). X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed that the ligands attach to the nanocrystal surface via covalent Si-S bonds. The thiol-capping layer, however, readily undergoes hydrolysis and severe degradation in the presence of moisture. Dodecanethiol could be exchanged with dodecene by hydrosilylation for enhanced stability.

Prospects of nanoscience with nanocrystals

Colloidal nanocrystals (NCs, i.e., crystalline nanoparticles) have become an important class of materials with great potential for applications ranging from medicine to electronic and optoelectronic devices. Today's strong research focus on NCs has been prompted by the tremendous progress in their synthesis. Impressively narrow size distributions of just a few percent, rational shape-engineering, compositional modulation, electronic doping, and tailored surface chemistries are now feasible for a broad range of inorganic compounds. The performance of inorganic NC-based photovoltaic and light-emitting devices has become competitive to other state-of-the-art materials. Semiconductor NCs hold unique promise for near- and mid-infrared technologies, where very few semiconductor materials are available. On a purely fundamental side, new insights into NC growth, chemical transformations, and self-organization can be gained from rapidly progressing in situ characterization and direct imaging techniques. New phenomena are constantly being discovered in the photophysics of NCs and in the electronic properties of NC solids. In this Nano Focus, we review the state of the art in research on colloidal NCs focusing on the most recent works published in the last 2 years.