Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

Selectively Self-Aligned Sol-Gel Copper Oxide for Large-Area Multi-Valued Logic Devices

Rapid expansion of digital information density has led to a growing demand for multi-valued logic (MVL) systems, which aim to minimize energy and time consumption for computations. Heterojunction transistors represent a class of device architectures for MVL circuits; however, partially layered structures can be realized only for vacuum-deposited organic and transferred 2D materials due to the constraints of patterning processes. In this study, a novel CuxO/IGZO heterojunction-based ternary inverter is presented via a sol-gel technique and direct patterning process using a self-assembled monolayer (SAM). This approach allows for a promising alternative to conventional photolithography, with the electrical characteristics of SAM-processed oxide thin-film transistors closely matching those of pristine devices. Structural investigations validate the partially overlapped heterojunction and its smoothness. Depth profiling with x-ray photoelectronspectroscopy highlights an oxidation gradient in CuxO, suggesting enhanced hole introduction at the IGZO interface. This mechanism potentially supports efficient hole transport and negative differential transconductance, foundational for MVL systems. Such advancements signify the potential for solution-processable digital electronics that offer streamlined fabrication at an affordable budget.

Versatile Papertronics: Photo-Induced Synapse and Security Applications on Papers

Paper is a readily available material in nature. Its recyclability, eco-friendliness, portability, flexibility, and affordability make it a favored substrate for researchers seeking cost-effective solutions. Electronic devices based on solution process are fabricated on paper and banknotes using PVK and SnO2 nanoparticles. The devices manufactured on paper substrates exhibit photosynaptic behavior under ultraviolet pulse illumination, stemming from numerous interactions on the surface of the SnO2 nanoparticles. A light-modulated artificial synapse device is realized on a paper at a low voltage bias of -0.01 V, with an average recognition rate of 91.7% based on the Yale Face Database. As a security device on a banknote, 400 devices in a 20 × 20 array configuration exhibited random electrical characteristics owing to the local morphology of the SnO2 nanoparticles and differences in the depletion layer width at the SnO2/PVK interface. The security Physically Unclonable Functions (PUF) key based on the current distribution extracted at -1 V show unpredictable reproducibility with 50% uniformity, 48.7% inter-Hamming distance, and 50.1% bit-aliasing rates. Moreover, the device maintained its properties for more than 210 days under a curvature radius of 8.75 mm and bias and UV irradiation stress conditions.

Junctionless Structure Indium-Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability

In recent years, considerable attention has focused on high-performance and flexible crystalline metal oxide thin-film transistors (TFTs). However, achieving both high performance and flexibility in semiconductor devices is challenging due to the inherently conductive and brittle nature of crystalline metal oxide. In this study, we propose a facile way to overcome this limitation by employing a junctionless (JL) TFT structure via oxygen plasma treatment of the crystalline indium-tin oxide (ITO) films. The oxygen plasma treatment significantly reduced oxygen vacancies in the ITO films, contributing to the significant reduction in the carrier concentration from 4.67 × 1020 to 1.39 × 1016. Importantly, this reduction was achieved without inducing any noticeable structural changes in the ITO, enabling the successful realization of ITO JL TFTs with an adjustable threshold voltage. Furthermore, the ITO JL TFTs demonstrate good stability and reliability under various bias stress conditions, aging in the air atmosphere, and high-temperature processes. In addition, the ITO JL TFTs exhibit low light sensitivity due to the wide bandgap of ITO and further suppression of Vo defects, making them suitable for applications requiring stable performance under light exposure. To compare and analyze the flexibility of the JL structure and conventional structure with additional source/drain (S/D) junction in ITO TFTs with nonencapsulation, we utilized mechanical simulations and transmission line method (TLM). By employing the JL structure in ITO TFT through carefully optimized oxygen plasma treatment, we successfully mitigated stress concentration at the S/D-channel interface. This resulted in a JL ITO TFT that exhibited a change in contact resistance of less than 20% even after 20,000 bending cycles. Consequently, a stable and flexible ITO TFT with field-effect mobility (μFE) of 12.74 cm2/(V s) was realized, outperforming conventionally structured ITO TFTs with additional S/D junction, where the contact resistance nearly tripled.

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.

Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability

To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated with almost identical film quality, gate dielectric/channel interface, and back-channel conditions. However, excellent operational stability and electrical performance suitable for oxide TFT backplane was only achieved using an 8 nm thick InZnO film. In contrast, the ultrathin and thicker films exhibited electrical performances that were either very resistive (high positive VTh and low on-current) or excessively conductive (high negative VTh and high off-current). This investigation confirmed that the quality of semiconductor materials, solution process design, and structural parameters, including the dimensions of the channel layer, must be carefully designed to realize high-performance and high-stability oxide TFTs.

Advanced Stretchable Photodetectors: Strategies, Materials and Devices

Past decades have witnessed the generation of new stretchable photodetectors in electronic eyes, health sensing, wearable devices, intelligent monitoring and other fields. Stretchable devices require not only outstanding performance but also excellent flexibility, adaptability and stability. Innovative strategies have been proposed to realize the stretchability of devices. In addition, novel functional materials including zero-dimensional nanomaterials, one-dimensional inorganic nanomaterials, two-dimensional layered materials, organic materials, and organic-inorganic composite materials with excellent properties are emerging to continuously improve the performance of devices. Here, the recent research progress of stretchable photodetectors in terms of both various design methods and functional materials is outlined. The optical performance and stretchable properties are also comprehensively reviewed. Finally, a summary and the challenges associated with the application of stretchable photodetectors are presented.

Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception

The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor. This phototransistor contains a heterostructured channel layer composed of zinc-oxide nanoparticles (ZnO NPs) interconnected with a solution-processed zinc-tin oxide (ZTO) film. The oxygen adsorption and desorption on the ZnO NP surface under light illumination are responsible for the positive-sloped PPR; the electron trapping effect at the ZnO NP/SiO2 interface is attributed to the negative-sloped PPR. The various accountable light power densities and number of surface trap states are considered to be directly realizing these spike-timing interval-dependent characteristics. The actual benefit of these characteristics is the dual temporal coding modes based on multiplicative operation using a ZTO/ZnO NP phototransistor realized via the active gate voltage modulation. The contrary tendency of the PPR index and temporal coding─a major biological neural coding─is well demonstrated by the potential of ZTO/ZnO NP phototransistors to be implemented in sensor networks for an artificial visual perception.

Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration. Generally speaking, the films prepared with a single metal oxide dielectric often achieve a breakthrough in one aspect of performance, but dielectric layers are required to be improved to get better performance in leakage current, capacitance density, and transmittance simultaneously in modern electronic devices. Therefore, we optimized the performance of the dielectric layers by using multiple metal oxides. We combined zirconia, yttria, magnesium oxide, alumina, and hafnium oxide with the solution method to find the best combination of these five metal oxides. The physical properties of the multi-component films were measured by atomic force microscopy (AFM), ultraviolet-visible spectrophotometer, and other instruments. The results show that the films prepared by multi-component metal oxides have good transmittance and low roughness. The thicknesses of all films in our experiment are less than 100 nm. Then, metal–insulator–metal (MIM) devices were fabricated. In addition, we characterized the electrical properties of MIM devices. We find that multi-component oxide films can achieve good performances in several aspects. The aluminum-magnesium-yttrium-zirconium-oxide (AMYZO_x) group of 0.6 M has the lowest leakage current density, which is 5.03 × 10⁻⁸ A/cm² @ 1.0 MV/cm. The hafnium-magnesium-yttrium-zirconium-oxide (HMYZO_x) group of 0.8 M has a maximum capacitance density of 208 nF/cm². The films with a small thickness and a high capacitance density are very conducive to high integration. Therefore, we believe that multi-component films have potential in the process of dielectric layers and great application prospects in highly integrated electronic devices.

Research Progress of Biomimetic Memristor Flexible Synapse

With the development of the Internet of things, artificial intelligence, and wearable devices, massive amounts of data are generated and need to be processed. High standards are required to store and analyze this information. In the face of the explosive growth of information, the memory used in data storage and processing faces great challenges. Among many types of memories, memristors have received extensive attentions due to their low energy consumption, strong tolerance, simple structure, and strong miniaturization. However, they still face many problems, especially in the application of artificial bionic synapses, which call for higher requirements in the mechanical properties of the device. The progress of integrated circuit and micro-processing manufacturing technology has greatly promoted development of the flexible memristor. The use of a flexible memristor to simulate nerve synapses will provide new methods for neural network computing and bionic sensing systems. In this paper, the materials and structure of the flexible memristor are summarized and discussed, and the latest configuration and new materials are described. In addition, this paper will focus on its application in artificial bionic synapses and discuss the challenges and development direction of flexible memristors from this perspective.

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.

Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review

Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs' electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.

Reverse-Offset Printing of Polymer Resist Ink for Micrometer-Level Patterning of Metal and Metal-Oxide Layers

Printed electronics has advanced during the recent decades in applications such as organic photovoltaic cells and biosensors. However, the main limiting factors preventing the more widespread use of printing in flexible electronics manufacturing are (i) the poor attainable linewidths via conventional printing methods (≫10 μm), (ii) the limited availability of printable materials (e.g., low work function metals), and (iii) the inferior performance of many printed materials when compared to vacuum-processed materials (e.g., printed vs sputtered ITO). Here, we report a printing-based, low-temperature, low-cost, and scalable patterning method that can be used to fabricate high-resolution, high-performance patterned layers with linewidths down to ∼1 μm from various materials. The method is based on sequential steps of reverse-offset printing (ROP) of a sacrificial polymer resist, vacuum deposition, and lift-off. The sharp vertical sidewalls of the ROP resist layer allow the patterning of evaporated metals (Al) and dielectrics (SiO) as well as sputtered conductive oxides (ITO), where the list is expandable also to other vacuum-deposited materials. The resulting patterned layers have sharp sidewalls, low line-edge roughness, and uniform thickness and are free from imperfections such as edge ears occurring with other printed lift-off methods. The applicability of the method is demonstrated with highly conductive Al (∼5 × 10^-8 Ωm resistivity) utilized as transparent metal mesh conductors with ∼35 Ω_□ at 85% transparent area percentage and source/drain electrodes for solution-processed metal-oxide (In₂O₃) thin-film transistors with ∼1 cm²/(Vs) mobility. Moreover, the method is expected to be compatible with other printing methods and applicable in other flexible electronics applications, such as biosensors, resistive random access memories, touch screens, displays, photonics, and metamaterials, where the selection of current printable materials falls short.

Flexible temperature sensors based on carbon nanomaterials

Flexible temperature sensors based on carbon nanomaterials can be attached to the surface of human skin or curved surfaces directly for continuous and stable data measurements, and have attracted extensive attention in myriad areas.

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al₂O₃) thin films for high-performance OTFTs. Nanocluster-based Al₂O₃ films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al₂O₃ films. A wide array of spectroscopic and surface analyses show that ultralow-temperature photochemical activation (<60 °C) induces the decomposition of chemical impurities and causes the densification of the metal-oxide film, resulting in a highly dense high-k Al₂O₃ dielectric layer from Al-13 nanocluster-based solutions. The fabricated nanocluster-based Al₂O₃ films exhibit a low leakage current density (<10⁻⁷ A/cm²) at 2 MV/cm and high dielectric breakdown strength (>6 MV/cm). Using this dielectric layer, precisely aligned microrod-shaped 2,7-dioctyl[1]benzothieno [3,2-b][1] benzothiophene (C8-BTBT) single-crystal OTFTs were fabricated via solvent vapor annealing and photochemical patterning of the sacrificial layer.