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Gurusamy S, Banerjee S, Sundaresan A, Liang M, Shiv Halasyamani P, Natarajan S. Synthesis, Optical, Dielectric, SHG, Magnetic and Visible Light Driven Catalytic Studies on Compounds Belonging to the Swedenborgite Structure. Chem Asian J 2024:e202301113. [PMID: 38321639 DOI: 10.1002/asia.202301113] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Revised: 02/05/2024] [Accepted: 02/06/2024] [Indexed: 02/08/2024]
Abstract
A new compound, InBaZn3 GaO7 , with swedenborgite structure along with transition metal (TM) substituted variants have also been prepared. The structure contains layers of tetrahedral ions (Zn2+ /Ga3+ ) connected by octahedrally coordinated In3+ ion forming the three-dimensional structure with voids where the Ba2+ ions occupy. The TM substituted compounds form with new colors. The origin of the color was understood based on the ligand-field transitions. The near IR reflectivity studies indicate that the Ni - substituted compounds exhibit good near - IR reflectivity behavior, making them possible candidates for 'cool pigments'. The temperature dependent dielectric studies indicate that the InBaZn3 GaO7 compound undergoes a phase transition at ~360 °C. The compounds are active towards second harmonic generation (SHG). Magnetic studies show the compounds, InBaZn2 CoFeO7 and InBaZn2 CuFeO7 to be anti-ferromagnetic in nature. The copper containing compounds were found to be good catalysts, under visible light, for the oxidation of aromatic alkenes. The many properties observed in the swedenborgite structure-based compounds suggests that the mineral structure offers a fertile ground to investigate newer compounds and properties.
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Affiliation(s)
- Sivakumar Gurusamy
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, 560012, India
| | - Souvik Banerjee
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O., Bangalore, 560 064, India
| | - Athinarayanan Sundaresan
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O., Bangalore, 560 064, India
| | - Mingli Liang
- Department of Chemistry, University of Houston, 112 Fleming Building, Houston, Texas, 77204-5003, United States
| | - P Shiv Halasyamani
- Department of Chemistry, University of Houston, 112 Fleming Building, Houston, Texas, 77204-5003, United States
| | - Srinivasan Natarajan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, 560012, India
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Natarajan S, Sivakumar G. Structural evolution of transition metal orthoborates (Zn3B2O6 ‐ Co3B2O6) with the Kotoite mineral structure: Synthesis, structure and properties. Z Anorg Allg Chem 2022. [DOI: 10.1002/zaac.202200017] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Srinivasan Natarajan
- Solid State and Structural Chemistry, Indian Institute of Science Framework Solids Laboratory Sir C.V. Raman avenue 560012 Bangalore INDIA
| | - Gurusamy Sivakumar
- Indian Institute of Science Solid State and Structural Chemistry Unit 560012 Bangalore INDIA
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Zou ZY, Song XQ, Jiang L, Yuan CL, Lu WZ, Hu YM, Lei W. Crystal Structure and Ferroelectric Evidence of BaZnSi 3 O 8 , a Low-Permittivity Microwave Dielectric Ceramic. Chemistry 2021; 27:5992-5998. [PMID: 33462895 DOI: 10.1002/chem.202005170] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2020] [Revised: 01/14/2021] [Indexed: 11/09/2022]
Abstract
BaZnSi3 O8 ceramic was prepared by the conventional solid-state method and sintered at 1100 °C. XRD and synchrotron Rietveld refinement analyses revealed the BaZnSi3 O8 ceramic presented a monoclinic structure with a space group of P21 /a (No.14), which is reported for the first time. The BaZnSi3 O8 ceramic presented a weak ferroelectricity, which was confirmed by the P-E loop and the 90° nanoscale ferroelectric domain. Although ϵr -T displayed two ϵr abnormal peaks at 400 °C and 460 °C, the Curie temperature (Tc ) was located at 460 °C according to the dielectric loss and Curie-Weiss law. Moreover, the BaZnSi3 O8 ceramic exhibited optimized microwave dielectric properties with ϵr =6.55, Q×f=52400 GHz, and τf =-24.5 ppm/°C. Hence, the BaZnSi3 O8 ceramic in the ternary BaO-ZnO-SiO2 system possessed both weak ferroelectricity and microwave dielectric properties. These results are expected to break the technical barrier of ferroelectric phase shifter applications in microwave and even millimeter-wave frequency bands.
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Affiliation(s)
- Zheng-Yu Zou
- School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiao-Qiang Song
- School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lei Jiang
- Hubei Key Laboratory of Ferro-Piezoelectric Materials and Devices, Hubei University, Wuhan, 430074, P. R. China
| | - Chang-Lai Yuan
- Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, P. R. China
| | - Wen-Zhong Lu
- School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.,Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yong-Ming Hu
- Hubei Key Laboratory of Ferro-Piezoelectric Materials and Devices, Hubei University, Wuhan, 430074, P. R. China
| | - Wen Lei
- School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.,Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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