Band Gap Engineering of BN Sheets by Interlayer Dihydrogen Bonding and Electric Field Control

Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.

Two-dimensional hydrogenated buckled gallium arsenide: an ab initio study

First-principles calculations have been carried out to investigate the stability, structural and electronic properties of two-dimensional (2D) hydrogenated GaAs with three possible geometries: chair, zigzag-line and boat configurations. The effect of van der Waals interactions on 2D H-GaAs systems has also been studied. These configurations were found to be energetic and dynamic stable, as well as having a semiconducting character. Although 2D GaAs adsorbed with H tends to form a zigzag-line configuration, the energy differences between chair, zigzag-line and boat are very small which implies the metastability of the system. Chair and boat configurations display a [Formula: see text]-[Formula: see text] direct bandgap nature, while pristine 2D-GaAs and zigzag-line are indirect semiconductors. The bandgap sizes of all configurations are also hydrogen dependent, and wider than that of pristine 2D-GaAs with both PBE and HSE functionals. Even though DFT-vdW interactions increase the adsorption energies and reduce the equilibrium distances of H-GaAs systems, it presents, qualitatively, the same physical results on the stability and electronic properties of our studied systems with PBE functional. According to our results, 2D buckled gallium arsenide is a good candidate to be synthesized by hydrogen surface passivation as its group III-V partners 2D buckled gallium nitride and boron nitride. The hydrogenation of 2D-GaAs tunes the bandgap of pristine 2D-GaAs, which makes it a potential candidate for optoelectronic applications in the blue and violet ranges of the visible electromagnetic spectrum.

Tuning the Electronic and Magnetic Properties of Graphene Flake Embedded in Boron Nitride Nanoribbons with Transverse Electric Fields: First-Principles Calculations

The electronic and magnetic properties of h-BN nanoribbions embedded with graphene nanoflakes (CBNNRs) are systematically studied by ab initio calculations. The CBNNRs with zigzag or armchair edges are all bipolar magnetic semiconductors (BMSs). The band gaps of zigzag CBNNRs (zCBNNRs) change linearly with the transverse electric field (E-field) for the first-order Stark effect, whereas for the armchair CBNNRs (aCBNNRs), the band gaps vary quadratically with the E-field for the second-order Stark effect. For zCBNNRs and aCBNNRs, they could transform from BMS to spin gapless semiconductor (SGS), metal, and half-metal (HM) under different transverse E-fields. The CBNNRs may transform into a semiconductor or HM, under the same E-fields, depending on the position of graphene flakes. The CBNNRs introduce local magnetic moment at carbon atoms, and the magnetic moment is determined by the size of the graphene flakes. These observations open the door to applications of CBNNRs in spintronic devices.

A theoretical study on the structures and electronic and magnetic properties of new boron nitride composite nanosystems by depositing superhalogen Al13 on the surface of nanosheets/nanoribbons

Inorganic boron nitride (BN) nanomaterials possess outstanding physical and chemical characteristics, and can be considered as an excellent building block to construct new composite nanomaterials. In this work, on the basis of the first-principles computations, a new type of composite nanostructure can be constructed by depositing superhalogen Al13 on the surface of low-dimensional BN monolayer or nanoribbons (BNML/BNNRs). All these Al13-modified BN nanosystems can possess large adsorption energies, indicating that superhalogen Al13 can be stably adsorbed on the surface of these BN materials. In particular, it is revealed that independent of the chirality, ribbon width and adsorption site, introducing superhalogen Al13 can endow the BN-based composite systems with a magnetic ground state with a magnetic moment of about 1.00 μB, and effectively narrow their robust wide band gaps. These new superhalogen-Al13@BN composite nanostructures, with magnetism and an appropriate band gap, can be very promising to be applied in multifunctional nanodevices in the near future.

Atomically Thin Hexagonal Boron Nitride Nanofilm for Cu Protection: The Importance of Film Perfection

Outstanding protection of Cu by high-quality boron nitride nanofilm (BNNF) 1-2 atomic layers thick in salt water is observed, while defective BNNF accelerates the reaction of Cu toward water. The chemical stability, insulating nature, and impermeability of ions through the BN hexagons render BNNF a great choice for atomic-scale protection.

Energetics, barriers and vibrational spectra of partially and fully hydrogenated hexagonal boron nitride

We study hydrogen chemisorption at full coverage and low concentrations on hexagonal boron nitride (h-BN). Chemisorption trends reveal the complex nature of hydrogenation. Barriers for diffusion are found to be significantly altered by the presence of additional H atoms. Moreover, the presence of a Stone-Wales defect may dramatically enhance the bond strength of H to the h-BN surface. These findings provide new insights to understand and characterize hydrogenated boron nitride.

Tuning the electronic properties and work functions of graphane/fully hydrogenated h-BN heterobilayers via heteronuclear dihydrogen bonding and electric field control

Using density functional theory calculations with van der Waals correction, we show that the electronic properties (band gap and carrier mobility) and work functions of graphane/fully hydrogenated hexagonal boron nitride (G/fHBN) heterobilayers can be favorably tuned via heteronuclear dihydrogen bonding (C-HH-B and C-HH-N) and an external electric field. Our results reveal that G/fHBN heterobilayers have different direct band gaps of ∼1.2 eV and ∼3.5 eV for C-HH-B and C-HH-N bonds, respectively. In particular, these band gaps can be effectively modulated by altering the direction and strength of the external electric field (E-field), and correspondingly exhibit a semiconductor-metal transition. The conformation and stability of G/fHBN heterobilayers show a strong dependence on the heteronuclear dihydrogen bonding. Fantastically, these bonds are stable enough under a considerable external E-field as compared with other van der Waals (vdW) 2D layered materials. The mobilities of G/fHBN heterobilayers we predicted are hole-dominated, reasonably high (improvable up to 200 cm(2) V(-1) s(-1)), and extremely isotropic. We also demonstrate that the work function of G/fHBN heterobilayers is very sensitive to the external E-field and is extremely low. These findings make G/fHBN heterobilayers very promising materials for field-effect transistors and light-emitting devices, and inspire more efforts in the development of 2D material systems using weak interlayer interactions and electric field control.

Single Layer Bismuth Iodide: Computational Exploration of Structural, Electrical, Mechanical and Optical Properties

Layered graphitic materials exhibit new intriguing electronic structure and the search for new types of two-dimensional (2D) monolayer is of importance for the fabrication of next generation miniature electronic and optoelectronic devices. By means of density functional theory (DFT) computations, we investigated in detail the structural, electronic, mechanical and optical properties of the single-layer bismuth iodide (BiI₃) nanosheet. Monolayer BiI₃ is dynamically stable as confirmed by the computed phonon spectrum. The cleavage energy (E_cl) and interlayer coupling strength of bulk BiI₃ are comparable to the experimental values of graphite, which indicates that the exfoliation of BiI₃ is highly feasible. The obtained stress-strain curve shows that the BiI₃ nanosheet is a brittle material with a breaking strain of 13%. The BiI₃ monolayer has an indirect band gap of 1.57 eV with spin orbit coupling (SOC), indicating its potential application for solar cells. Furthermore, the band gap of BiI₃ monolayer can be modulated by biaxial strain. Most interestingly, interfacing electrically active graphene with monolayer BiI₃ nanosheet leads to enhanced light absorption compared to that in pure monolayer BiI₃ nanosheet, highlighting its great potential applications in photonics and photovoltaic solar cells.

Edge-Hydroxylated Boron Nitride Nanosheets as an Effective Additive to Improve the Thermal Response of Hydrogels

Upon flowing hot steam over hexagonal boron nitride (h-BN) bulk powder, efficient exfoliation and hydroxylation of BN occur simultaneously. Through effective hydrogen bonding with water and N-isopropylacrylamide, edge-hydroxylated BN nanosheets dramatically improve the dimensional change and dye release of this temperature-sensitive hydrogel and thereby enhance its efficacy in bionic, soft robotic, and drug-delivery applications.

A Cu(111) supported h-BN nanosheet: a potential low-cost and high-performance catalyst for CO oxidation

CO oxidation on h-BNNS/Cu(111).

Tuning band gaps of BN nanosheets and nanoribbons via interfacial dihalogen bonding and external electric field

Density functional theory computations with dispersion corrections (DFT-D) were performed to investigate the dihalogen interactions and their effect on the electronic band structures of halogenated (fluorinated and chlorinated) BN bilayers and aligned halogen-passivated zigzag BN nanoribbons (BNNRs). Our results reveal the presence of considerable homo-halogen (FF and ClCl) interactions in bilayer fluoro (chloro)-BN sheets and the aligned F (Cl)-ZBNNRs, as well as substantial hetero-halogen (FCl) interactions in hybrid fluoro-BN/chloro-BN bilayer and F-Cl-ZBNNRs. The existence of interfacial dihalogen interactions leads to significant band-gap modifications for the studied BN nanosystems. Compared with the individual fluoro (chloro)-BN monolayers or pristine BNNRs, the gap reduction in bilayer fluoro-BN (B-FF-N array), hybrid fluoro-BN/chloro-BN bilayer (N-FCl-N array), aligned Cl-ZBNNRs (B-ClCl-N alignment), and hybrid F-Cl-ZBNNRs (B-FCl-N alignment) is mainly due to interfacial polarizations, while the gap narrowing in bilayer chloro-BN (N-ClCl-N array) is ascribed to the interfacial nearly-free-electron states. Moreover, the binding strengths and electronic properties of the interactive BN nanosheets and nanoribbons can be controlled by applying an external electric field, and extensive modulation from large-gap to medium-gap semiconductors, or even metals can be realized by adjusting the direction and strength of the applied electric field. This interesting strategy for band gap control based on weak interactions offers unique opportunities for developing BN nanoscale electronic devices.

Intrinsic negative differential resistance characteristics in zigzag boron nitride nanoribbons

Zigzag boron nitride nanoribbon (ZBNNR) based devices exhibit intrinsic negative differential resistance (NDR) characteristics.