Long‐Range Antiferromagnetic Order on Spin Ladders SrFe 2 S 2 O and SrFe 2 Se 2 O As Probed by Neutron Diffraction and Mössbauer Spectroscopy

Layer Hall Detection of the Néel Vector in Centrosymmetric Magnetoelectric Antiferromagnets

The efficient detection of the Néel vector in antiferromagnets is one of the prerequisites toward antiferromagnetic spintronic devices and remains a challenging problem. Here, we propose that the layer Hall effect can be used to efficiently detect the Néel vector in centrosymmetric magnetoelectric antiferromagnets. Thanks to the robust surface magnetization of magnetoelectric antiferromagnets, the combination of sizable exchange field and an applied electric field results in the layer-locked spin-polarized band edges. Moreover, the Berry curvature can be engineered efficiently by an electric field, which consequently gives rise to the layer-locked Berry curvature responsible for the layer Hall effect. Importantly, it is demonstrated that the layer Hall conductivity strongly depends on the Néel vector orientation and exhibits rich electromagnetic responses, which can be used to detect the Néel vector reversal. Based on density functional theory calculations, we exemplify those phenomena in the prototypical Cr_{2}O_{3} compound. A complete list of the magnetic point groups sustaining the layer Hall effect is presented, aiding the search for realistic materials. Our work proposes a novel approach to detect the Néel vector and holds great promise for antiferromagnetic spintronic applications.

Zeeman Effect in Centrosymmetric Antiferromagnetic Semiconductors Controlled by an Electric Field

Centrosymmetric antiferromagnetic semiconductors, although abundant in nature, seem less promising than ferromagnets and ferroelectrics for practical applications in semiconductor spintronics. As a matter of fact, the lack of spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these materials. Here, we propose a paradigm to harness electronic spin in centrosymmetric antiferromagnets via Zeeman spin splitting of electronic energy levels-termed as the spin Zeeman effect-which is controlled by an electric field. By symmetry analysis, we identify 21 centrosymmetric magnetic point groups that accommodate such a spin Zeeman effect. We further predict by first principles that two antiferromagnetic semiconductors, Fe_{2}TeO_{6} and SrFe_{2}S_{2}O, are excellent candidates showcasing Zeeman splittings as large as ∼55 and ∼30  meV, respectively, induced by an electric field of 6  MV/cm. Moreover, the electronic spin magnetization associated to the splitting energy levels can be switched by reversing the electric field. Our Letter thus sheds light on the electric-field control of electronic spin in antiferromagnets, which broadens the scope of application of centrosymmetric antiferromagnetic semiconductors.

A high dimensional oxysulfide built from large iron-based clusters with partial charge-ordering

Herein we report the original Ba₁₀Fe_7.75Zn_5.25S₁₈Si₃O₁₂ oxysulfide which crystallizes in a new structural type. Contrary to the usual oxychalcogenides, it crystallizes with a non-centrosymmetric 3D spatial network structure built from large magnetic clusters consisting of twelve (Fe^2+/3+/Zn)S₃O tetrahedra decorating a central Fe²⁺S₆ octahedron and exhibiting a spin glass state.

Synthesis, Crystal Structure, and Optical Characterization of the Sulfide Chloride Oxide CsBa6V4S12ClO4 with a Near-Infrared Fluorescence

When CsCl, BaS, BaO, V, and S are reacted in a solid-state reaction under inert conditions, pure powders and single crystals of senary CsBa₆V₄S₁₂ClO₄ can be obtained. Its unique crystal structure has the symmetry R3̅H (no. 148) and unit cell parameters a = 9.0575(2) and c = 28.339(1) Å. The crystal structure contains polar units [VS₃O]^3- and a complex BaS₇ClO₂ coordination. The compound gets its deep-red color from a low-energy charge transfer, which can be explained by an electron transfer from S^2- to V⁵⁺. In the near-infrared range, down-converted fluorescence occurs at 1.06 and 0.90 eV, and both emissions appear <450 ps after excitation at about 1.27 eV.