Tunneling Valley Hall Effect Driven by Tilted Dirac Fermions

Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling valley Hall effect (TVHE) driven by tilted Dirac fermions in all-in-one tunnel junctions based on a two-dimensional (2D) valley material. Different doping of the electrode and spacer regions in these tunnel junctions results in momentum filtering of the tunneling Dirac fermions, generating a strong transverse valley Hall current dependent on the Dirac-cone tilting. Using the parameters of an existing 2D valley material, we demonstrate that such a strong TVHE can host a giant valley Hall angle even in the absence of the Berry curvature. Finally, we predict that resonant tunneling can occur in a tunnel junction with properly engineered device parameters such as the spacer width and transport direction, providing significant enhancement of the valley Hall angle. Our work opens a new approach to generate valley polarization in realistic valleytronic systems.

Unconventional Polarization-Switching Mechanism in (Hf, Zr)O_{2} Ferroelectrics and Its Implications

HfO_{2}-based ferroelectric thin films are promising for their application in ferroelectric devices. Predicting the ultimate magnitude of polarization and understanding its switching mechanism are critical to realize the optimal performance of these devices. Here, a generalized solid-state variable cell nudged elastic band method is employed to predict the switching pathway associated with domain-wall motion in (Hf,Zr)O_{2} ferroelectrics. It is found that the polarization reversal pathway, where threefold coordinated O atoms pass across the nominal unit-cell boundaries defined by the Hf/Zr atomic planes, is energetically more favorable than the conventional pathway where the O atoms do not pass through these planes. This finding implies that the polarization orientation in the orthorhombic Pca2_{1} phase of HfO_{2} and its derivatives is opposite to that normally assumed, predicts the spontaneous polarization magnitude of about 70  μC/cm^{2} that is nearly 50% larger than the commonly accepted value, signifies a positive intrinsic longitudinal piezoelectric coefficient, and suggests growth of ferroelectric domains, in response to an applied electric field, structurally reversed to those usually anticipated. These results provide important insights into the understanding of ferroelectricity in HfO_{2}-based ferroelectrics.

Symmetry Control of Unconventional Spin-Orbit Torques in IrO2

Spin-orbit torques generated by a spin current are key to magnetic switching in spintronic applications. The polarization of the spin current dictates the direction of switching required for energy-efficient devices. Conventionally, the polarizations of these spin currents are restricted to be along a certain direction due to the symmetry of the material allowing only for efficient in-plane magnetic switching. Unconventional spin-orbit torques arising from novel spin current polarizations, however, have the potential to switch other magnetization orientations such as perpendicular magnetic anisotropy, which is desired for higher density spintronic-based memory devices. Here, it is demonstrated that low crystalline symmetry is not required for unconventional spin-orbit torques and can be generated in a nonmagnetic high symmetry material, iridium dioxide (IrO2 ), using epitaxial design. It is shown that by reducing the relative crystalline symmetry with respect to the growth direction large unconventional spin currents can be generated and hence spin-orbit torques. Furthermore, the spin polarizations detected in (001), (110), and (111) oriented IrO2 thin films are compared to show which crystal symmetries restrict unconventional spin transport. Understanding and tuning unconventional spin transport generation in high symmetry materials can provide a new route towards energy-efficient magnetic switching in spintronic devices.

Néel Spin Currents in Antiferromagnets

Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral currents. Here, we demonstrate that these globally spin-neutral currents can represent the Néel spin currents, i.e., staggered spin currents flowing through different magnetic sublattices. The Néel spin currents emerge in antiferromagnets with strong intrasublattice coupling (hopping) and drive the spin-dependent transport phenomena such as tunneling magnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetic tunnel junctions (AFMTJs). Using RuO_{2} and Fe_{4}GeTe_{2} as representative antiferromagnets, we predict that the Néel spin currents with a strong staggered spin polarization produce a sizable fieldlike STT capable of the deterministic switching of the Néel vector in the associated AFMTJs. Our work uncovers the previously unexplored potential of fully compensated antiferromagnets and paves a new route to realize the efficient writing and reading of information for antiferromagnetic spintronics.

Switchable Anomalous Hall Effects in Polar-Stacked 2D Antiferromagnet MnBi2Te4

van der Waals (vdW) assembly of two-dimensional (2D) materials allows polar layer stacking to realize novel properties switchable by the induced electric polarization. Here, based on symmetry analyses and density-functional calculations, we explore the emergence of the anomalous Hall effect (AHE) in antiferromagnetic MnBi₂Te₄ films assembled by polar layer stacking. We demonstrate that breaking P̂T̂ symmetry in an MnBi₂Te₄ bilayer produces a magnetoelectric effect and a spontaneous AHE switchable by electric polarization. We find that reversible polarization at one of the interfaces in a three-layer MnBi₂Te₄ film drives a metal-insulator transition, as well as switching between the AHE and quantum AHE (QAHE). Finally, we predict that engineering interlayer polarization in a three-layer MnBi₂Te₄ film allows converting MnBi₂Te₄ from a trivial insulator to a Chern insulator. Overall, our work emphasizes the topological properties in 2D vdW antiferromagnets induced by polar layer stacking, which do not exist in a bulk material.

Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3

Large spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with ferromagnets are promising for next-generation magnetic memory and logic devices. SOTs generated from y spin originating from spin Hall and Edelstein effects can realize field-free magnetization switching only when the magnetization and spin are collinear. Here we circumvent the above limitation by utilizing unconventional spins generated in a MnPd₃ thin film grown on an oxidized silicon substrate. We observe conventional SOT due to y spin, and out-of-plane and in-plane anti-damping-like torques originated from z spin and x spin, respectively, in MnPd₃/CoFeB heterostructures. Notably, we have demonstrated complete field-free switching of perpendicular cobalt via out-of-plane anti-damping-like SOT. Density functional theory calculations show that the observed unconventional torques are due to the low symmetry of the (114)-oriented MnPd₃ films. Altogether our results provide a path toward realization of a practical spin channel in ultrafast magnetic memory and logic devices.

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf_0.5Zr_0.5O₂ thin film by deliberately controlling the termination of the bottom La_0.67Sr_0.33MnO₃ layer. We find that the Hf_0.5Zr_0.5O₂ films on the MnO₂-terminated La_0.67Sr_0.33MnO₃ have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La_0.67Sr_0.33MnO₃, while with no wake-up effect. Even though the Hf_0.5Zr_0.5O₂ thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO₂ termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf_0.5Zr_0.5O₂/ La_0.67Sr_0.33MnO₃ interface and hole doping of the Hf_0.5Zr_0.5O₂ layer resulting from the MnO₂ interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf_0.5Zr_0.5O₂. We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.

Prominent Size Effects without a Depolarization Field Observed in Ultrathin Ferroelectric Oxide Membranes

The increasing miniaturization of electronics requires a better understanding of material properties at the nanoscale. Many studies have shown that there is a ferroelectric size limit in oxides, below which the ferroelectricity will be strongly suppressed due to the depolarization field, and whether such a limit still exists in the absence of the depolarization field remains unclear. Here, by applying uniaxial strain, we obtain pure in-plane polarized ferroelectricity in ultrathin SrTiO_{3} membranes, providing a clean system with high tunability to explore ferroelectric size effects especially the thickness-dependent ferroelectric instability with no depolarization field. Surprisingly, the domain size, ferroelectric transition temperature, and critical strain for room-temperature ferroelectricity all exhibit significant thickness dependence. These results indicate that the stability of ferroelectricity is suppressed (enhanced) by increasing the surface or bulk ratio (strain), which can be explained by considering the thickness-dependent dipole-dipole interactions within the transverse Ising model. Our study provides new insights into ferroelectric size effects and sheds light on the applications of ferroelectric thin films in nanoelectronics.

In-plane charged domain walls with memristive behaviour in a ferroelectric film

Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications^1-3. The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO₃ ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO₃ film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

A Room-Temperature Ferroelectric Resonant Tunneling Diode

Resonant tunneling is a quantum-mechanical effect in which electron transport is controlled by the discrete energy levels within a quantum-well (QW) structure. A ferroelectric resonant tunneling diode (RTD) exploits the switchable electric polarization state of the QW barrier to tune the device resistance. Here, the discovery of robust room-temperature ferroelectric-modulated resonant tunneling and negative differential resistance (NDR) behaviors in all-perovskite-oxide BaTiO₃ /SrRuO₃ /BaTiO₃ QW structures is reported. The resonant current amplitude and voltage are tunable by the switchable polarization of the BaTiO₃ ferroelectric with the NDR ratio modulated by ≈3 orders of magnitude and an OFF/ON resistance ratio exceeding a factor of 2 × 10⁴ . The observed NDR effect is explained an energy bandgap between Ru-t_2g and Ru-e_g orbitals driven by electron-electron correlations, as follows from density functional theory calculations. This study paves the way for ferroelectric-based quantum-tunneling devices in future oxide electronics.

Efficient perpendicular magnetization switching by a magnetic spin Hall effect in a noncollinear antiferromagnet

Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn₃Sn. The magnetic group symmetry of Mn₃Sn allows generation of the out-of-plane spin current carrying spin polarization collinear to its direction induced by an in-plane charge current. This spin current drives an out-of-plane anti-damping torque providing the deterministic switching of the perpendicular magnetization of an adjacent Ni/Co multilayer. Due to being odd with respect to time reversal symmetry, the observed magnetic spin Hall effect and the resulting spin-orbit torque can be reversed with reversal of the antiferromagnetic order. Contrary to the conventional spin-orbit torque devices, the demonstrated magnetization switching does not need an external magnetic field and requires much lower current density which is useful for low-power spintronics.

Spin-orbit torques driven by the conventional spin Hall effect are widely used to switch magnetization, but this approach is nondeterministic and inefficient for magnets with perpendicular magnetic anisotropy. Here, the authors demonstrate deterministic, field-free switching in a Ni/Co multilayer by exploiting the magnetic spin Hall effect in adjacent Mn₃Sn.

Intrinsic ferroelectricity in Y-doped HfO2 thin films

Ferroelectric HfO₂-based materials hold great potential for the widespread integration of ferroelectricity into modern electronics due to their compatibility with existing Si technology. Earlier work indicated that a nanometre grain size was crucial for the stabilization of the ferroelectric phase. This constraint, associated with a high density of structural defects, obscures an insight into the intrinsic ferroelectricity of HfO₂-based materials. Here we demonstrate that stable and enhanced polarization can be achieved in epitaxial HfO₂ films with a high degree of structural order (crystallinity). An out-of-plane polarization value of 50 μC cm^-2 has been observed at room temperature in Y-doped HfO₂(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm^-2, which is in close agreement with density functional theory calculations. The crystal structure of films reveals the Pca2₁ orthorhombic phase with small rhombohedral distortion, underlining the role of the structural constraint in stabilizing the ferroelectric phase. Our results suggest that it could be possible to exploit the intrinsic ferroelectricity of HfO₂-based materials, optimizing their performance in device applications.

Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order parameter, known as the Néel vector, by electric means is critical to realize concepts of AFM spintronics. Here, we demonstrate that noncollinear AFM metals, such as Mn_{3}Sn, exhibit a momentum dependent spin polarization which can be exploited in AFM tunnel junctions to detect the Néel vector. Using first-principles calculations, we predict a tunneling magnetoresistance (TMR) effect as high as 300% in AFM tunnel junctions with Mn_{3}Sn electrodes, where the junction resistance depends on the relative orientation of their Néel vectors and exhibits four nonvolatile resistance states. We argue that the spin-split band structure and the related TMR effect can also be realized in other noncollinear AFM metals like Mn_{3}Ge, Mn_{3}Ga, Mn_{3}Pt, and Mn_{3}GaN. Our work provides a robust method for detecting the Néel vector in noncollinear antiferromagnets via the TMR effect, which may be useful for their application in AFM spintronic devices.

Ferroelectric Control of Magnetic Skyrmions in Two-Dimensional van der Waals Heterostructures

Magnetic skyrmions are chiral nanoscale spin textures which are usually induced by the Dzyaloshinskii-Moriya interaction (DMI). Recently, magnetic skyrmions have been observed in two-dimensional (2D) van der Waals (vdW) ferromagnetic materials, such as Fe₃GeTe₂. The electric control of skyrmions is important for their potential application in low-power memory technologies. Here, we predict that DMI and magnetic skyrmions in a Fe₃GeTe₂ monolayer can be controlled by ferroelectric polarization of an adjacent 2D vdW ferroelectric In₂Se₃. Based on density functional theory and atomistic spin-dynamics modeling, we find that the interfacial symmetry breaking produces a sizable DMI in a Fe₃GeTe₂/In₂Se₃ vdW heterostructure. We show that the magnitude of DMI can be controlled by ferroelectric polarization reversal, leading to creation and annihilation of skyrmions. Furthermore, we find that the sign of DMI in a In₂Se₃/Fe₃GeTe₂/In₂Se₃ heterostructure changes with ferroelectric switching reversing the skyrmion chirality. The predicted electrically controlled skyrmion formation may be interesting for spintronic applications.

Oxide Two-Dimensional Electron Gas with High Mobility at Room-Temperature

The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO₃ -based heterostructures. Here, 2DEG formation at the LaScO₃ /BaSnO₃ (LSO/BSO) interface with a room-temperature mobility of 60 cm²  V^-1  s^-1 at a carrier concentration of 1.7 × 10¹³  cm^-2 is reported. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO₃ -based 2DEGs. This is achieved by combining a thick BSO buffer layer with an ex situ high-temperature treatment, which not only reduces the dislocation density but also produces a SnO₂ -terminated atomically flat surface, followed by the growth of an overlying BSO/LSO interface. Using weak beam dark-field transmission electron microscopy imaging and in-line electron holography technique, a reduction of the threading dislocation density is revealed, and direct evidence for the spatial confinement of a 2DEG at the BSO/LSO interface is provided. This work opens a new pathway to explore the exciting physics of stannate-based 2DEGs at application-relevant temperatures for oxide nanoelectronics.

Spin-neutral currents for spintronics

Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group symmetry supports a non-spin-degenerate Fermi surface. Due to their momentum-dependent spin polarization, such antiferromagnets can be used as active elements in antiferromagnetic tunnel junctions (AFMTJs) and produce a giant tunneling magnetoresistance (TMR) effect. Using RuO₂ as a representative compensated antiferromagnet exhibiting spin-independent conductance along the [001] direction but a non-spin-degenerate Fermi surface, we design a RuO₂/TiO₂/RuO₂ (001) AFMTJ, where a globally spin-neutral charge current is controlled by the relative orientation of the Néel vectors of the two RuO₂ electrodes, resulting in the TMR effect as large as ~500%. These results are expanded to normal metals which can be used as a counter electrode in AFMTJs with a single antiferromagnetic layer or other elements in spintronic devices. Our work uncovers an unexplored potential of the materials with no global spin polarization for utilizing them in spintronics.

Magnetoelectric Coupling at the Ni/Hf0.5Zr0.5O2 Interface

Composite multiferroics containing ferroelectric and ferromagnetic components often have much larger magnetoelectric coupling compared to their single-phase counterparts. Doped or alloyed HfO₂-based ferroelectrics may serve as a promising component in composite multiferroic structures potentially feasible for technological applications. Recently, a strong charge-mediated magnetoelectric coupling at the Ni/HfO₂ interface has been predicted using density functional theory calculations. Here, we report on the experimental evidence of such magnetoelectric coupling at the Ni/Hf_0.5Zr_0.5O₂(HZO) interface. Using a combination of operando XAS/XMCD and HAXPES/MCDAD techniques, we probe element-selectively the local magnetic properties at the Ni/HZO interface in functional Au/Co/Ni/HZO/W capacitors and demonstrate clear evidence of the ferroelectric polarization effect on the magnetic response of a nanometer-thick Ni marker layer. The observed magnetoelectric effect and the electronic band lineup of the Ni/HZO interface are interpreted based on the results of our theoretical modeling. It elucidates the critical role of an ultrathin NiO interlayer, which controls the sign of the magnetoelectric effect as well as provides a realistic band offset at the Ni/HZO interface, in agreement with the experiment. Our results hold promise for the use of ferroelectric HfO₂-based composite multiferroics for the design of multifunctional devices compatible with modern semiconductor technology.

Giant Transport Anisotropy in ReS_{2} Revealed via Nanoscale Conducting-Path Control

The low in-plane symmetry in layered 1T'-ReS_{2} results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS_{2} by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce a conductivity switching ratio of >1.5×10^{8} in the ReS_{2} channel at 300 K. Characterizing the domain-defined conducting nanowires in an insulating background shows that the conductivity ratio between the directions along and perpendicular to the Re chain can exceed 5.5×10^{4} in monolayer ReS_{2}. Theoretical modeling points to the band origin of the transport anomaly and further reveals the emergence of a flat band in few-layer ReS_{2}. Our work paves the path for implementing highly anisotropic 2D materials for designing novel collective phenomena and electron lensing applications.

Defects in ferroelectric HfO2

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the expectations of developing competitive ferroelectric non-volatile memory devices. To date, it is widely accepted that the performance of HfO2-based ferroelectric devices during their life cycle is critically dependent on the presence of point defects as well as structural phase polymorphism, which mainly originates from defects either. The purpose of this review article is to overview the impact of defects in ferroelectric HfO2 on its functional properties and the resulting performance of memory devices. Starting from the brief summary of defects in classical perovskite ferroelectrics, we then introduce the known types of point defects in dielectric HfO2 thin films. Further, we discuss main analytical techniques used to characterize the concentration and distribution of defects in doped ferroelectric HfO2 thin films as well as at their interfaces with electrodes. The main part of the review is devoted to the recent experimental studies reporting the impact of defects in ferroelectric HfO2 structures on the performance of different memory devices. We end up with the summary and perspectives of HfO2-based ferroelectric competitive non-volatile memory devices.

Modulation of Spin-Orbit Torque from SrRuO3 by Epitaxial-Strain-Induced Octahedral Rotation

Spin-orbit torque (SOT), which arises from the spin-orbit coupling of conduction electrons, is believed to be the key route for developing low-power, high-speed, and nonvolatile memory devices. Despite the theoretical prediction of pronounced Berry phase curvatures in certain transition-metal perovskite oxides, which lead to considerable intrinsic spin Hall conductivity, SOT from this class of materials has rarely been reported until recently. Here, the SOT generated by epitaxial SrRuO₃ of three different crystal structures is systematically studied. The results of both spin-torque ferromagnetic resonance and in-plane harmonic Hall voltage measurements concurrently reveal that the intrinsic SOT efficiency of SrRuO₃ decreases when the epitaxial strain changes from tensile to compressive. The X-ray diffraction data demonstrate a strong correlation between the magnitude of SOT and octahedral rotation around the in-plane axes of SrRuO₃ , consistent with the theoretical prediction. This work offers new possibilities of tuning SOT with crystal structures and novel opportunities of integrating the unique properties of perovskite oxides with spintronic functionalities.

Two-dimensional ferroelectricity by design

A synthetic ferroelectric is made from a van der Waals assembly of boron nitride

Interface-engineered electron and hole tunneling

Although the phenomenon of tunneling has been known since the advent of quantum mechanics, it continues to enrich our understanding of many fields of science. Commonly, this effect is described in terms of electrons traversing the potential barrier that exceeds their kinetic energy due to the wave nature of electrons. This picture of electron tunneling fails, however, for tunnel junctions, where the Fermi energy lies sufficiently close to the insulator valence band, in which case, hole tunneling dominates. We demonstrate the deterministic control of electron and hole tunneling in interface-engineered Pt/BaTiO₃/La_0.7Sr_0.3MnO₃ ferroelectric tunnel junctions by reversal of tunneling electroresistance. Our electrical measurements, electron microscopy and spectroscopy characterization, and theoretical modeling unambiguously point out to electron or hole tunneling regimes depending on interface termination. The interface control of the tunneling regime offers designed functionalities of electronic devices.

Two-Dimensional Antiferroelectric Tunnel Junction

Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Because of the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage. This allows transitions between ferroelectric and antiferroelectric orderings, resulting in significant changes of the electronic structure. Here, we propose to realize 2D antiferroelectric tunnel junctions (AFTJs), which exploit this new functionality, based on bilayer In_{2}X_{3} (X=S, Se, Te) barriers and different 2D electrodes. Using first-principles density functional theory calculations, we demonstrate that the In_{2}X_{3} bilayers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, thus supporting a nonvolatile switching between these states. Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the In_{2}S_{3} van der Waals bilayers, and predict giant tunneling electroresistance effects and multiple nonvolatile resistance states driven by ferroelectric-antiferroelectric order transitions. Our proposal opens a new route to realize nanoscale memory devices with ultrahigh storage density using 2D AFTJs.

Van der Waals Multiferroic Tunnel Junctions

Multiferroic tunnel junctions (MFTJs) have aroused significant interest due to their functional properties useful for nonvolatile memory devices. So far, however, all of the existing MFTJs have been based on perovskite-oxide heterostructures limited by a relatively high resistance-area (RA) product unfavorable for practical applications. Here, using first-principles calculations, we explore spin-dependent transport properties of van der Waals (vdW) MFTJs which consist of two-dimensional (2D) ferromagnetic Fe_nGeTe₂ (n = 3, 4, 5) electrodes and 2D ferroelectric In₂Se₃ barrier layers. We demonstrate that such Fe_mGeTe₂/In₂Se₃/Fe_nGeTe₂ (m, n = 3, 4, 5; m ≠ n) MFTJs exhibit multiple nonvolatile resistance states associated with different polarization orientation of the ferroelectric In₂Se₃ layer and magnetization alignment of the two ferromagnetic Fe_nGeTe₂ layers. We find a remarkably low RA product (less than 1 Ω·μm²) which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for nonvolatile memory applications.

Controlling spin current polarization through non-collinear antiferromagnetism

The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the magnetization. However, symmetry conditions generally restrict spin polarizations to be orthogonal to both the charge and spin flows. Spin polarizations can deviate from such direction in nonmagnetic materials only when the crystalline symmetry is reduced. Here, we show control of the spin polarization direction by using a non-collinear antiferromagnet Mn₃GaN, in which the triangular spin structure creates a low magnetic symmetry while maintaining a high crystalline symmetry. We demonstrate that epitaxial Mn₃GaN/permalloy heterostructures can generate unconventional spin-orbit torques at room temperature corresponding to out-of-plane and Dresselhaus-like spin polarizations which are forbidden in any sample with two-fold rotational symmetry. Our results demonstrate an approach based on spin-structure design for controlling spin-orbit torque, enabling high-efficient antiferromagnetic spintronics.

In the typical spin-hall effect, spin-current, charge current, and spin polarisation are all mutually perpendicular, a feature enforced by symmetry. Here, using an anti-ferromagnet with a triangular spin structure, the authors demonstrate a spin-hall effect without a perpendicular spin alignment.

Epitaxial antiperovskite/perovskite heterostructures for materials design

Engineered heterostructures formed by complex oxide materials are a rich source of emergent phenomena and technological applications. In the quest for new functionality, a vastly unexplored avenue is interfacing oxide perovskites with materials having dissimilar crystallochemical properties. Here, we propose a unique class of heterointerfaces based on nitride antiperovskite and oxide perovskite materials as a previously unidentified direction for materials design. We demonstrate the fabrication of atomically sharp interfaces between nitride antiperovskite Mn₃GaN and oxide perovskites (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ and SrTiO₃. Using atomic-resolution imaging/spectroscopic techniques and first-principles calculations, we determine the atomic-scale structure, composition, and bonding at the interface. The epitaxial antiperovskite/perovskite heterointerface is mediated by a coherent interfacial monolayer that interpolates between the two antistructures. We anticipate our results to be an important step for the development of functional antiperovskite/perovskite heterostructures, combining their unique characteristics such as topological properties for ultralow-power applications.

Evaluating the Thermoelectric Properties of BaTiS3 by Density Functional Theory

BaTiS₃ is a semiconductor with a small bandgap of ∼0.5 eV and strong transport anisotropy caused primarily by structural anisotropy; it contains well-separated octahedral columns along the [0001] direction and low lattice thermal conductivity, appealing for thermoelectric applications. Here, we evaluate the prospect of BaTiS₃ as a thermoelectric material by using the linearized electron and phonon Boltzmann transport theory based on the first-principles density functional band structure calculations. We find sizable values of the key thermoelectric parameters, such as the maximum power factor PF = 928 μW K^-2 and the maximum figure of merit ZT = 0.48 for an electron-doped sample and PF = 74 μW K^-2 and ZT = 0.17 for a hole-doped sample at room temperature, and a small doping level of ±0.25e per unit cell. The increase in temperature yields an increase in both the power factor and the figure of merit, reaching large values of PF = 3078 μW K^-2 and ZT = 0.77 for the electron-doped sample and PF = 650 μW K^-2 and ZT = 0.62 for the hole-doped sample at 800 K. Our results elucidate the promise of BaTiS₃ as a material for the thermoelectric power generator.

Polar coupling enabled nonlinear optical filtering at MoS2/ferroelectric heterointerfaces

Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS₂ and a neighboring ferroelectric oxide thin film. The second harmonic generation response at the heterointerface is either substantially enhanced or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, and can be further tailored by the polar domains. Unlike the extensively studied coupling mechanisms driven by charge, spin, and lattice, the interfacial tailoring effect is solely mediated by the polar symmetry, as well explained via our density functional theory calculations, pointing to a new material strategy for the functional design of nanoscale reconfigurable optical applications.

Nonlinear Anomalous Hall Effect for Néel Vector Detection

Antiferromagnetic (AFM) spintronics exploits the Néel vector as a state variable for novel spintronic devices. Recent studies have shown that the fieldlike and antidamping spin-orbit torques (SOTs) can be used to switch the Néel vector in antiferromagnets with proper symmetries. However, the precise detection of the Néel vector remains a challenging problem. In this Letter, we predict that the nonlinear anomalous Hall effect (AHE) can be used to detect the Néel vector in most compensated antiferromagnets supporting the antidamping SOT. We show that the magnetic crystal group symmetry of these antiferromagnets combined with spin-orbit coupling produce a sizable Berry curvature dipole and hence the nonlinear AHE. As a specific example, we consider the half-Heusler alloy CuMnSb, in which the Néel vector can be switched by the antidamping SOT. Based on density-functional theory calculations, we show that the nonlinear AHE in CuMnSb results in a measurable Hall voltage under conventional experimental conditions. The strong dependence of the Berry curvature dipole on the Néel vector orientation provides a new detection scheme of the Néel vector based on the nonlinear AHE. Our predictions enrich the material platform for studying nontrivial phenomena associated with the Berry curvature and broaden the range of materials useful for AFM spintronics.

Domain-Wall Tunneling Electroresistance Effect

Ferroelectric tunnel junctions (FTJs) utilizing an in-plane head-to-head ferroelectric domain wall (DW) have recently been realized, showing interesting physics and new functionalities. However, the DW state in these junctions was found to be metastable and not reversible after applying an electric field. In this work, we demonstrate that a stable and reversible head-to-head DW state can be achieved in FTJs by proper engineering of polar interfaces. Using density functional theory (DFT) calculations and phenomenological modeling, we explore the DW stability by varying stoichiometry of the La_{1-x}Sr_{x}O/TiO_{2} interfaces in FTJs with La_{0.5}Sr_{0.5}MnO_{3} electrodes and a ferroelectric BaTiO_{3} tunnel barrier. For, x≤0.4 we find that the DW state becomes a global minimum and the calculated hysteresis loops exhibit three reversible polarization states. For such FTJs, our quantum transport calculations predict the emergence of a DW tunneling electroresistance effect-reversible switching of the tunneling conductance between the highly conductive DW state and two much less conductive uniform polarization states.

Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf0.5Zr0.5O2 in functional memory capacitors

The emergence of ferroelectricity in nanometer-thick films of doped hafnium oxide (HfO₂) makes this material a promising candidate for use in Si-compatible non-volatile memory devices. The switchable polarization of ferroelectric HfO₂ controls functional properties of these devices through the electric potential distribution across the capacitor. The experimental characterization of the local electric potential at the nanoscale has not so far been realized in practice. Here, we develop a new methodology which allows us, for the first time, to experimentally quantify the polarization-dependent potential profile across few-nanometer-thick ferroelectric Hf_0.5Zr_0.5O₂ thin films. Using a standing-wave excitation mode in synchrotron based hard X-ray photoemission spectroscopy, we depth-selectively probe TiN/Hf_0.5Zr_0.5O₂/W prototype memory capacitors and determine the local electrostatic potential by analyzing the core-level line shifts. We find that the electric potential profile across the Hf_0.5Zr_0.5O₂ layer is non-linear and changes with in situ polarization switching. Combined with our scanning transmission electron microscopy data and theoretical modeling, we interpret the observed non-linear potential behavior in terms of defects in Hf_0.5Zr_0.5O₂, at both interfaces, and their charge state modulated by the ferroelectric polarization. Our results provide an important insight into the intrinsic electronic properties of HfO₂ based ferroelectric capacitors and are essential for engineering memory devices.

Ferroelectric Tunnel Junctions Enhanced by a Polar Oxide Barrier Layer

Ferroelectric tunnel junctions (FTJs) have recently aroused significant interest due to the interesting physics controlling their properties and potential application in nonvolatile memory devices. In this work, we propose a new concept to design high-performance FTJs based on ferroelectric/polar-oxide composite barriers. Using density functional theory calculations, we model electronic and transport properties of LaNiO₃/PbTiO₃/LaAlO₃/LaNiO₃ tunnel junctions and demonstrate that an ultrathin polar LaAlO₃(001) layer strongly enhances their performance. We predict a tunneling electroresistance (TER) effect in these FTJs with an OFF/ON resistance ratio exceeding a factor of 10⁴ and ON state resistance as low as about 1 kΩμm². Such an enhanced performance is driven by the ionic charge at the PbTiO₃/LaAlO₃ interface, which significantly increases transmission across the FTJ when the ferroelectric polarization of PbTiO₃ is pointing against the intrinsic electric field produced by this ionic charge. This is due to the formation of a two-dimensional (2D) electron or hole gas, depending on the LaAlO₃ termination being (LaO)⁺ or (AlO₂)^-, respectively, which is formed to screen the polarization charge of the nonuniform polarization state. This 2D electron (hole) gas can be switched ON and OFF by the reversal of ferroelectric polarization, resulting in the giant TER effect. The proposed design suggests a new direction for creating FTJs with a stable and reversible ferroelectric polarization, a sizable TER effect, and a low-resistance-area product, as required for memory applications.

Spin-Dependent Transport in van der Waals Magnetic Tunnel Junctions with Fe3GeTe2 Electrodes

van der Waals (vdW) heterostructures, stacking different two-dimensional materials, have opened up unprecedented opportunities to explore new physics and device concepts. Especially interesting are recently discovered two-dimensional magnetic vdW materials, providing new paradigms for spintronic applications. Here, using density functional theory (DFT) calculations, we investigate the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe₃GeTe₂ ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer. For both types of junctions, we find that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel. Such a giant tunneling magnetoresistance (TMR) effect is driven by dissimilar electronic structure of the two spin-conducting channels in Fe₃GeTe₂, resulting in a mismatch between the incoming and outgoing Bloch states in the electrodes and thus suppressed transmission for an antiparallel-aligned MTJ. The vdW bonding between electrodes and a spacer layer makes this result virtually independent of the type of the spacer layer, making the predicted giant TMR effect robust with respect to strain, interface distance, and other parameters, which may vary in the experiment. We hope that our results will further stimulate experimental studies of vdW MTJs and pave the way for their applications in spintronics.

A room-temperature ferroelectric semimetal

Coexistence of reversible polar distortions and metallicity leading to a ferroelectric metal, first suggested by Anderson and Blount in 1965, has so far remained elusive. Electrically switchable intrinsic electric polarization, together with the direct observation of ferroelectric domains, has not yet been realized in a bulk crystalline metal, although incomplete screening by mobile conduction charges should, in principle, be possible. Here, we provide evidence that native metallicity and ferroelectricity coexist in bulk crystalline van der Waals WTe₂ by means of electrical transport, nanoscale piezoresponse measurements, and first-principles calculations. We show that, despite being a Weyl semimetal, WTe₂ has switchable spontaneous polarization and a natural ferroelectric domain structure at room temperature. This new class of materials has tantalizing potential for functional nanoelectronics applications.

Controlling the Magnetic Properties of LaMnO3 /SrTiO3 Heterostructures by Stoichiometry and Electronic Reconstruction: Atomic-Scale Evidence

Interface-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking are of importance for fundamental physics and device applications. How interfaces affect the interplay between charge, spin, orbital, and lattice degrees of freedom is the key to boosting device performance. In LaMnO₃ /SrTiO₃ (LMO/STO) polar-nonpolar heterostructures, electronic reconstruction leads to an antiferromagnetic to ferromagnetic transition, making them viable for spin filter applications. The interfacial electronic structure plays a critical role in the understanding of the microscopic origins of the observed magnetic phase transition, from antiferromagnetic at 5 unit cells (ucs) of LMO or below to ferromagnetic at 6 ucs or above, yet such a study is missing. Here, an atomic scale understanding of LMO/STO ambipolar ferromagnetism is offered by quantifying the interface charge distribution and performing first-principles density functional theory (DFT) calculations across this abrupt magnetic transition. It is found that the electronic reconstruction is confined within the first 3 ucs of LMO from the interface, and more importantly, it is robust against oxygen nonstoichiometry. When restoring stoichiometry, an enhanced ferromagnetic insulating state in LMO films with a thickness as thin as 2 nm (5 uc) is achieved, making LMO readily applicable as barriers in spin filters.

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces

Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions. Here, using prototype La_2/3Sr_1/3MnO₃/BaTiO₃ heterostructures, we demonstrate that ferroelectric polarization of BaTiO₃ controls the orbital hybridization and magnetism at heterointerfaces. We observe changes in the enhanced orbital occupancy and significant charge redistribution across the heterointerfaces, affecting the spin and orbital magnetic moments of the interfacial Mn and Ti atoms. Importantly, we find that the exchange coupling between Mn and Ti atoms across the interface is tuned by ferroelectric polarization from ferromagnetic to antiferromagnetic. Our findings provide a viable route to electrically control complex magnetic configurations at artificial multiferroic interfaces, taking a step toward low-power spintronics.

Spin Filtering in CrI3 Tunnel Junctions

The recently discovered magnetism of two-dimensional (2D) van der Waals crystals has attracted a lot of attention. Among these materials is CrI₃, a magnetic semiconductor, exhibiting transitions between ferromagnetic and antiferromagnetic orderings under the influence of an applied magnetic field. Here, using first-principles methods based on density functional theory, we explore spin-dependent transport in tunnel junctions formed of face-centered cubic Cu(111) electrodes and a CrI₃ tunnel barrier. We find about 100% spin polarization of the tunneling current for a ferromagnetically ordered four-monolayer CrI₃ and a tunneling magnetoresistance of about 3000% associated with a change of magnetic ordering in CrI₃. This behavior is understood in terms of the spin and wave-vector-dependent evanescent states in CrI₃, which control the tunneling conductance. We find a sizable charge transfer from Cu to CrI₃, which adds new features to the mechanism of spin filtering in CrI₃-based tunnel junctions. Our results elucidate the mechanisms of spin filtering in CrI₃ tunnel junctions and provide important insights for the design of magnetoresistive devices based on 2D magnetic crystals.

Dirac Nodal Line Metal for Topological Antiferromagnetic Spintronics

Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the Néel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered Néel spin-orbit torque has been proposed to electrically manipulate Dirac band crossings in antiferromagnets; however, a reliable AFM material to realize these properties in practice is missing. In this Letter, we predict that room-temperature AFM metal MnPd_{2} allows the electrical control of the Dirac nodal line by the Néel spin-orbit torque. Based on first-principles density functional theory calculations, we show that reorientation of the Néel vector leads to switching between the symmetry-protected degenerate state and the gapped state associated with the dispersive Dirac nodal line at the Fermi energy. The calculated spin Hall conductivity strongly depends on the Néel vector orientation and can be used to experimentally detect the predicted effect using a proposed spin-orbit torque device. Our results indicate that AFM Dirac nodal line metal MnPd_{2} represents a promising material for topological AFM spintronics.

Publisher Correction: Anisotropic polarization-induced conductance at a ferroelectric-insulator interface

In the version of this Letter originally published, the right-hand arrow in Fig. 3b was incorrectly labelled; see correction note for details. Also, ref. 29 was incorrectly included in the reference list; it has now been removed.

Anisotropic polarization-induced conductance at a ferroelectric-insulator interface

Coupling between different degrees of freedom, that is, charge, spin, orbital and lattice, is responsible for emergent phenomena in complex oxide heterostrutures^1,2. One example is the formation of a two-dimensional electron gas (2DEG) at the polar/non-polar LaAlO₃/SrTiO₃ (LAO/STO)^3-7 interface. This is caused by the polar discontinuity and counteracts the electrostatic potential build-up across the LAO film³. The ferroelectric polarization at a ferroelectric/insulator interface can also give rise to a polar discontinuity^8-10. Depending on the polarization orientation, either electrons or holes are transferred to the interface, to form either a 2DEG or two-dimensional hole gas (2DHG)^11-13. While recent first-principles modelling predicts the formation of 2DEGs at the ferroelectric/insulator interfaces^9,10,12-14, experimental evidence of a ferroelectrically induced interfacial 2DEG remains elusive. Here, we report the emergence of strongly anisotropic polarization-induced conductivity at a ferroelectric/insulator interface, which shows a strong dependence on the polarization orientation. By probing the local conductance and ferroelectric polarization over a cross-section of a BiFeO₃-TbScO₃ (BFO/TSO) (001) heterostructure, we demonstrate that this interface is conducting along the 109° domain stripes in BFO, whereas it is insulating in the direction perpendicular to these domain stripes. Electron energy-loss spectroscopy and theoretical modelling suggest that the anisotropy of the interfacial conduction is caused by an alternating polarization associated with the ferroelectric domains, producing either electron or hole doping of the BFO/TSO interface.

Defect-Assisted Tunneling Electroresistance in Ferroelectric Tunnel Junctions

Recent experimental results have demonstrated ferroelectricity in thin films of SrTiO_{3} induced by antisite Ti_{Sr} defects. This opens a possibility to use SrTiO_{3} as a barrier layer in ferroelectric tunnel junctions (FTJs)-emerging electronic devices promising for applications in nanoelectronics. Here using density functional theory combined with quantum-transport calculations applied to a prototypical Pt/SrTiO_{3}/Pt FTJ, we demonstrate that the localized in-gap energy states produced by the antisite Ti_{Sr} defects are responsible for the enhanced electron tunneling conductance which can be controlled by ferroelectric polarization. Our tight-binding modeling, which takes into account multiple defects, shows that the predicted defect-assisted tunneling electroresistance effect is greatly amplified when the defect energy levels are brought to the Fermi energy by one of the polarization states. Our results have implications for FTJs based on conventional ferroelectric barriers with defects and can be employed for the design of new types of FTJs with enhanced performance.

Persistent spin texture enforced by symmetry

Persistent spin texture (PST) is the property of some materials to maintain a uniform spin configuration in the momentum space. This property has been predicted to support an extraordinarily long spin lifetime of carriers promising for spintronics applications. Here, we predict that there exists a class of noncentrosymmetric bulk materials, where the PST is enforced by the nonsymmorphic space group symmetry of the crystal. Around certain high symmetry points in the Brillouin zone, the sublattice degrees of freedom impose a constraint on the effective spin-orbit field, which orientation remains independent of the momentum and thus maintains the PST. We illustrate this behavior using density-functional theory calculations for a handful of promising candidates accessible experimentally. Among them is the ferroelectric oxide BiInO3-a wide band gap semiconductor which sustains a PST around the conduction band minimum. Our results broaden the range of materials that can be employed in spintronics.

Publisher Correction: Direct imaging of the electron liquid at oxide interfaces

In the version of this Letter originally published, in two instances in Fig. 1 the layers in the cross-sectional view of the (001) interface were incorrectly labelled: in Fig. 1b SrO⁺ should have read SrO⁰; in Fig. 1c LaO⁺, AlO₂^-, LaO⁺, TiO₂⁰, SrO⁺, TiO₂⁰ should have read LaO₃^3-, Al³⁺, LaO₃^3-, Ti⁴⁺, SrO₃^4-, Ti⁴⁺. In Fig. 3c the upper-right equation read -σ_s = -e/2a² but should have read -σ_s = e/2a² and in Fig. 3f the lower-right equation read -σ_s = -e/2√3a² but should have read σ_s = -e/2√3a². These errors have now been corrected in the online version of the Letter.

Ambipolar ferromagnetism by electrostatic doping of a manganite

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO₃, with electron-hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO₃ film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron-hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.

Direct imaging of the electron liquid at oxide interfaces

The breaking of symmetry across an oxide heterostructure causes the electronic orbitals to be reconstructed at the interface into energy states that are different from their bulk counterparts ¹ . The detailed nature of the orbital reconstruction critically affects the spatial confinement and the physical properties of the electrons occupying the interfacial orbitals^2-4. Using an example of two-dimensional electron liquids forming at LaAlO₃/SrTiO₃ interfaces^5,6 with different crystal symmetry, we show that the selective orbital occupation and spatial quantum confinement of electrons can be resolved with subnanometre resolution using inline electron holography. For the standard (001) interface, the charge density map obtained by inline electron holography shows that the two-dimensional electron liquid is confined to the interface with narrow spatial extension (~1.0 ± 0.3 nm in the half width). On the other hand, the two-dimensional electron liquid formed at the (111) interface shows a much broader spatial extension (~3.3 ± 0.3 nm) with the maximum density located ~2.4 nm away from the interface, in excellent agreement with density functional theory calculations.

Direct observation of a two-dimensional hole gas at oxide interfaces

The discovery of a two-dimensional electron gas (2DEG) at the LaAlO₃/SrTiO₃ interface ¹ has resulted in the observation of many properties^2-5 not present in conventional semiconductor heterostructures, and so become a focal point for device applications^6-8. Its counterpart, the two-dimensional hole gas (2DHG), is expected to complement the 2DEG. However, although the 2DEG has been widely observed ⁹ , the 2DHG has proved elusive. Herein we demonstrate a highly mobile 2DHG in epitaxially grown SrTiO₃/LaAlO₃/SrTiO₃ heterostructures. Using electrical transport measurements and in-line electron holography, we provide direct evidence of a 2DHG that coexists with a 2DEG at complementary heterointerfaces in the same structure. First-principles calculations, coherent Bragg rod analysis and depth-resolved cathodoluminescence spectroscopy consistently support our finding that to eliminate ionic point defects is key to realizing a 2DHG. The coexistence of a 2DEG and a 2DHG in a single oxide heterostructure provides a platform for the exciting physics of confined electron-hole systems and for developing applications.

Solid-State Synapse Based on Magnetoelectrically Coupled Memristor

Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in the human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through investigating the memristor behaviors in a La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ multiferroic tunnel junction, it was found that the ferroelectric domain dynamics characteristics are influenced by the relative magnetization alignment of the electrodes, and the interfacial spin polarization is manipulated continuously by ferroelectric domain reversal, enriching our understanding of the magnetoelectric coupling fundamentally. This creates a functionality that not only the resistance of the memristor but also the synaptic plasticity form can be further manipulated, as demonstrated by the spike-timing-dependent plasticity investigations. Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces. The multiple and controllable plasticity characteristic in a single artificial synapse, to resemble the synaptic morphological alteration property in a biological synapse, will be conducive to the development of artificial intelligence.

Tunneling Hot Spots in Ferroelectric SrTiO3

Strontium titanate (SrTiO₃) is the "silicon" in the emerging field of oxide electronics. While bulk properties of this material have been studied for decades, new unexpected phenomena have recently been discovered at the nanoscale, when SrTiO₃ forms an ultrathin film or an atomically sharp interface with other materials. One of the striking discoveries is room-temperature ferroelectricity in strain-free ultrathin films of SrTiO₃ driven by the Ti_Sr antisite defects, which generate a local dipole moment polarizing the surrounding nanoregion. Here, we demonstrate that these polar defects are not only responsible for ferroelectricity, but also propel the appearance of highly conductive channels, "hot spots", in the ultrathin SrTiO₃ films. Using a combination of scanning probe microscopy experimental studies and theoretical modeling, we show that the hot spots emerge due to resonant tunneling through localized electronic states created by the polar defects and that the tunneling conductance of the hot spots is controlled by ferroelectric polarization. Our finding of the polarization-controlled defect-assisted tunneling reveals a new mechanism of resistive switching in oxide heterostructures and may have technological implications for ferroelectric tunnel junctions. It is also shown that the conductivity of the hot spots can be modulated by mechanical stress, opening a possibility for development of conceptually new electronic devices with mechanically tunable resistive states.