Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6)

Exploring the excited states of the GeH+ radical cation including spin-orbit interaction: A revisited study

In this paper, we have carried out high-level ab initio calculations on the electronic states of GeH⁺ with the configuration interaction method. The spin-orbit coupling (SOC), core-valence correlation (CV), scalar relativistic effects and Davidson correction (+Q) are included. The potential energy curves (PECs) of 13 Λ-S correlated with the four lowest dissociation limits and 32 Ω electronic states generated from those Λ-S states are obtained. Our results indicate that the first ³Σ^- and second ³Π states are adiabatically correlated with the dissociation limit Ge(³P_g) + H⁺(¹S), which is different from the previously reported Ge⁺(⁴P_g) + H(²S_g). From the computed PECs, the spectroscopic constants of the Λ-S and Ω states are determined, which are in good agreement with previous experiments. The dipole moments (DMs) for Λ-S electronic states are also investigated. With the help of spin-orbit coupling matrix involving the 1³Σ^- and 2³Π states, the intricate couplings related with the crossing states are revealed, and the weak predissociation for ν' ≥0 vibrational levels of 1³Σ^- and the perturbations for vibrational levels of 2¹Σ⁺ (ν' ≥1) and 1¹Δ (ν' ≥0) states are analyzed. Finally, the transition properties of five transitions are predicted, including the Franck-Condon Factors (FCFs), transition dipole moments (TDMs), and the spontaneous radiative lifetimes of lower vibrational states. This study will improve our comprehension on the detailed electronic structure and spectroscopy of GeH⁺ radical cation.

Directed Gas Phase Formation of the Elusive Silylgermylidyne Radical (H3 SiGe, X2 A'')

The previously unknown silylgermylidyne radical (H₃ SiGe; X² A'') was prepared via the bimolecular gas phase reaction of ground state silylidyne radicals (SiH; X² Π) with germane (GeH₄ ; X¹ A₁ ) under single collision conditions in crossed molecular beams experiments. This reaction begins with the formation of a van der Waals complex followed by insertion of silylidyne into a germanium-hydrogen bond forming the germylsilyl radical (H₃ GeSiH₂ ). A hydrogen migration isomerizes this intermediate to the silylgermyl radical (H₂ GeSiH₃ ), which undergoes a hydrogen shift to an exotic, hydrogen-bridged germylidynesilane intermediate (H₃ Si(μ-H)GeH); this species emits molecular hydrogen forming the silylgermylidyne radical (H₃ SiGe). Our study offers a remarkable glance at the complex reaction dynamics and inherent isomerization processes of the silicon-germanium system, which are quite distinct from those of the isovalent hydrocarbon system (ethyl radical; C₂ H₅ ) eventually affording detailed insights into an exotic chemistry and intriguing chemical bonding of silicon-germanium species at the microscopic level exploiting crossed molecular beams.

Thermochemistry of germanium and organogermanium compounds

This article reviews the current state of thermochemistry (enthalpies of formation) of germanium and organogermanium compounds.

The Structure of the Carbene Stabilized Si2H2 May Be Equally Well Described with Coordinate Bonds as with Classical Double Bonds

The cyclic alkyl(amino) carbene stabilized Si2H2 has been isolated in the molecular form of composition (Me-cAAC:)2Si2H2 (1) and (Cy-cAAC:)2Si2H2 (2) at room temperature. Compounds 1 and 2 were synthesized from the reduction of HSiCl3 using 3 equiv of KC8 in the presence of 1 equiv of Me-cAAC: and Cy-cAAC:, respectively. These are the first molecular examples of Si2H2 characterized by single crystal X-ray structural analysis. Moreover, electrospray ionization mass spectrometry and (1)H as well as (29)Si NMR data are reported. Furthermore, the structure of compound 1 has been investigated by theoretical methods. The theoretical analysis of 1 explains equally well its structure with coordinate bonds as with classical double bonds of a 2,3-disila-1,3-butadiene.

Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(1 1 1)

In this work, a structural analysis of Ge layers deposited by molecular beam epitaxy (MBE) on Ag(1 1 1) surfaces with and without an AlN buffer layer have been investigated by x-ray Absorption Spectroscopy (XAS) at the Ge-K edge. For the Ge layers deposited on h-AlN buffer layer on Ag(1 1 1) an interatomic Ge-Ge distance [Formula: see text] Å is found, typical of 2-Dimensional Ge layers and in agreement with the theoretical predictions for free standing low-buckled Germanene presented in literature. First principles calculations, performed in the density functional theory (DFT) framework, supported the experimental RHEED and XAS findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1) template.

New bonding modes of carbon and heavier group 14 atoms Si–Pb

Molecules which possess chemical bonds where a bare group-14 atom C–Pb is bonded to σ-donor ligands L or to a transition metal fragment [TM] through donor–acceptor interactions are discussed together with an analysis of the bonding situation with modern quantum chemical methods.

A computational investigation into the substituent effect on the chemo- and stereoselectivity of crossed intermolecular radical anion [2 + 2] cycloadditions of enones

The chemoselectivity of cycloaddition is caused by the bulky group on the C atoms which form σ bond in the first step. The stereoselectivity mainly caused by the difference in steric interaction between the trans and cis transition states.

Elementary constituents of microdevices: The Ge2H fragment

Highly correlated ab initio electronic structure theory has been used to systematically investigate the linear (X 2Pi) GeGeH and H-bridged (X 2B1 and A 2A1) GeHGe structures and the isomerization transition state (A 2A') connecting X 2Pi with A 2A1. The equilibrium structures and physical properties have been predicted employing self-consistent field, configuration interaction with single and double excitations, coupled cluster with single and double excitations (CCSD), and CCSD with perturbative triple excitations [CCSD(T)]. Four correlation-consistent polarized valence-[cc-pVXZ and aug-cc-pVXZ (X=T and Q)] type basis sets were used in the study. For the H-bridged GeHGe isomer, the X 2B1 ground state is predicted to lie only 0.74 [0.95 with zero-point vibrational energy (ZPVE) corrections] kcal mol-1 below the A 2A1 excited state at the CCSD(T) level of theory with the augmented correlation-consistent polarized valence quadruple zeta (aug-cc-pVQZ) basis set. The X 2B1 state of the H-bridged GeHGe isomer lies 8.6 kcal mol-1 below the X 2Pi ground state of the linear GeGeH isomer. The forward isomerization barrier from the linear ground state to the A 2A' transition state is predicted to be 3.7 kcal mol-1. The reverse isomerization barrier between the A 2A1 GeHGe structure and the X 2Pi GeGeH structure is predicted to be 11.6 (10.8 with the ZPVE corrections) kcal mol-1 at the aug-cc-pVQZ CCSD(T) level of theory.

Ge3H(n)- anions (n = 0-5) and their neutral analogues: a theoretical investigation on the structure, stability, and thermochemistry

The structure, stability, and thermochemistry of various Ge3H(n)- isomers (n = 0-5) and of their neutral analogues have been investigated at the B3LYP/6-311+G(d), MP2(full)/6-31G(d), and Gaussian-2 (G2) level of theory. For Ge3H(-), both the B3LYP and the G2/MP2 methods predict the cyclic, H-bridged structure 1a- as the global minimum, more stable than another cyclic isomer and an open-chain isomer by ca. 10 and 25 kcal mol(-1), respectively. For Ge3H2(-), the B3LYP and the G2/MP2 methods provide a somewhat different description of the potential energy surface. At the G2/MP2 level of theory, the global minimum is the cyclic, H2Ge-bridged structure 2a-, separated by other three nearly degenerate isomers by ca. 10 kcal mol(-1). On the other hand, at the B3LYP level of theory, the cyclic, H-bridged structure 2e-, not located at the MP2 level of theory, is more stable than 2a- by ca. 1 kcal mol(-1). For Ge3H3(-), both the B3LYP and the G2/MP2 methods predict the cyclic, H3Ge-bridged isomer 3a- as the global minimum, but the energy differences with the other five located isomeric structures predicted by the two methods are quantitatively different. Similar to Ge3H2(-), the B3LYP and the G2/MP2 theoretical levels provide a somewhat different description of the Ge3H4(-) potential energy surface. At the G2/MP2 level of theory, the global minimum is the cyclic structure 4b- of C(2v) symmetry, featuring a Ge2H4 moiety and a Ge-bridged atom, which is more stable than other three located isomers by 3, 9, and 17 kcal mol(-1). On the other hand, at the B3LYP level of theory, the open-chain isomer 4a- of H3Ge-Ge-GeH(-) connectivity is more stable than 4b- by ca. 1 kcal mol(-1) and nearly degenerate with the alternative open-chain isomer H3Ge-GeH-Ge(-). For Ge3H5(-), both the B3LYP and the G2/MP2 methods predict the 2-propenyl-like isomer H3Ge-Ge-GeH2(-) as the global minimum, with energy differences with other four isomeric structures which range from ca. 1-2 to 13-17 kcal mol(-1). At the G2 level of theory and 298.15 K, the electron affinities of Ge3H(n) are computed as 2.17 (n = 0), 2.57 (n = 1), 1.70 (n = 2), 2.41 (n = 3), 2.07/1.80 (n = 4), and 2.71/2.46 eV (n = 5). The two alternative values reported for Ge3H4 and Ge3H5 reflect the alternative conceivable choice for the structure of the involved neutrals and ions. The G2 enthalpies of formation of Ge3H(n) and Ge3H(n)- (n = 0-5) have also been calculated using the atomization procedure. Finally, we have briefly discussed the implications of our calculations for previously performed mass spectrometric experiments on the negative ion chemistry of GeH4.

Why Do the Heavy-Atom Analogues of Acetylene E2H2(E = Si−Pb) Exhibit Unusual Structures?

DFT calculations at BP86/QZ4P have been carried out for different structures of E(2)H(2) (E = C, Si, Ge, Sn, Pb) with the goal to explain the unusual equilibrium geometries of the heavier group 14 homologues where E = Si-Pb. The global energy minima of the latter molecules have a nonplanar doubly bridged structure A followed by the singly bridged planar form B, the vinylidene-type structure C, and the trans-bent isomer D1. The energetically high-lying trans-bent structure D2 possessing an electron sextet at E and the linear form HEEH, which are not minima on the PES, have also been studied. The unusual structures of E(2)H(2) (E = Si-Pb) are explained with the interactions between the EH moieties in the (X(2)Pi) electronic ground state which differ from C(2)H(2), which is bound through interactions between CH in the a(4)Sigma(-) excited state. Bonding between two (X(2)Pi) fragments of the heavier EH hydrides is favored over the bonding in the a(4)Sigma(-) excited state because the X(2)Pi --> a(4)Sigma(-) excitation energy of EH (E = Si-Pb) is significantly higher than for CH. The doubly bridged structure A of E(2)H(2) has three bonding orbital contributions: one sigma bond and two E-H donor-acceptor bonds. The singly bridged isomer B also has three bonding orbital contributions: one pi bond, one E-H donor-acceptor bond, and one lone-pair donor-acceptor bond. The trans-bent form D1 has one pi bond and two lone-pair donor-acceptor bonds, while D2 has only one sigma bond. The strength of the stabilizing orbital contributions has been estimated with an energy decomposition analysis, which also gives the bonding contributions of the quasi-classical electrostatic interactions.