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Kedia R, Khatak M, Balkhandia M, Patra A. Electrochemical copolymerization of 3,4-ethylenedioxythiophene and dithienothiophene: influence of feed ratio on electrical, optical and electrochromic properties. RSC Adv 2024; 14:11334-11349. [PMID: 38590353 PMCID: PMC11000263 DOI: 10.1039/d3ra08729h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Accepted: 04/01/2024] [Indexed: 04/10/2024] Open
Abstract
Designing a copolymer is an efficient and alternative method to generate new chemical and physical properties compared to parent homopolymers without complex synthesis and structural modification. We herein report the electrochemical deposition of copolymer using two monomers 3,4-ethylenedioxythiophene (EDOT) and dithieno[3,2-b:2',3'-d]thiophene (DTT). Three different copolymers P[EDOT-co-DTT] were synthesized by using different feed ratios of monomers (EDOT and DTT molar ratios in solution are 2 : 1, 1 : 1 and 1 : 2) in acetonitrile containing 0.1 M tetrabutylammonium perchlorate (TBAClO4) as a supporting electrolyte. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and UV-vis-NIR spectroscopy were employed to characterize the obtained copolymers. Energy dispersive X-ray spectroscopy (EDX) analysis was used to estimate the composition of EDOT and DTT units in copolymers. The electrochemical and morphological properties were analyzed using cyclic voltammetry (CV) and field emission scanning electron microscopy (FESEM). In situ spectroelectrochemistry and electrochromic studies were performed to investigate the optical and switching properties of the resultant copolymers. The homopolymers poly(3,4-ethylenedioxythiophene) (PEDOT) and polydithieno[3,2-b:2',3'-d]thiophene (PDTT) were also prepared using similar electrochemical conditions and made comparisons where applicable. Computational calculations were done to understand the structure and energy levels of these polymers. It was found that these copolymers P[EDOT-co-DTT] show new properties as compared to homopolymers PEDOT and PDTT for organic electronic applications. Interesting to note that the resultant copolymers display the property of tunable electrochromism with improved transmittance and redox color change between the neutral and oxidized states.
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Affiliation(s)
- Rashi Kedia
- Photovoltaic Metrology Section, Advanced Materials & Device Metrology Division, CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India
- Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India
| | - Manisha Khatak
- Photovoltaic Metrology Section, Advanced Materials & Device Metrology Division, CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India
- Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India
| | - Manisha Balkhandia
- Photovoltaic Metrology Section, Advanced Materials & Device Metrology Division, CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India
- Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India
| | - Asit Patra
- Photovoltaic Metrology Section, Advanced Materials & Device Metrology Division, CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India
- Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India
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Li M, Chang J, Sun R, Wang H, Tian Q, Chen S, Wang J, He Q, Zhao G, Xu W, Li Z, Zhang S, Wang F, Qin T. Underlying Interface Defect Passivation and Charge Transfer Enhancement via Sulfonated Hole-Transporting Materials for Efficient Inverted Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53331-53339. [PMID: 36395380 DOI: 10.1021/acsami.2c16591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
To date, numbers of polymeric hole-transporting materials (HTMs) have been developed to improve interfacial charge transport to achieve high-performance inverted perovskite solar cells (PSCs). However, molecular design for passivating the underlying surface defects between perovskite and HTMs is a neglected issue, which is a major bottleneck to further enhance the performance of the inverted devices. Herein, we design and synthesize a new polymeric HTM PsTA-mPV with the methylthiol group, in which a lone pair of electrons of sulfur atoms can passivate the underlying interface defects of the perovskite more efficiently by coordinating Pb2+ vacancies. Furthermore, PsTA-mPV exhibits a deeper highest occupied molecular orbital (HOMO) level aligned with perovskite due to the π-acceptor capability of sulfur, which improves interfacial charge transfer between perovskite and the HTM layer. Using PsTA-mPV as a dopant-free HTM, the inverted PSCs show 20.2% efficiency and long-term stability, which is ascribed to surface defect passivation, well energy-level matching with perovskite, and efficient charge extraction.
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Affiliation(s)
- Mubai Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Jingxi Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Riming Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Hongze Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Qiushuang Tian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Shaoyu Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Junbo Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Qingyun He
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Guiqiu Zhao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Wenxin Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Zihao Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Shitong Zhang
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, China
| | - Fangfang Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
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Ouedraogo NAN, Odunmbaku GO, Guo B, Chen S, Lin X, Shumilova T, Sun K. Oxidation of Spiro-OMeTAD in High-Efficiency Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34303-34327. [PMID: 35852808 DOI: 10.1021/acsami.2c06163] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
2,2',7,7'-Tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), as an organic small molecule material, is the most commonly employed hole transport material (HTM) in perovskite solar cells (PSCs) because of its excellent properties that result in high photovoltaic performances. However, the material still suffers from low conductivity, leading to the necessary use of dopants and oxidative processes to overcome this issue. The spiro-OMeTAD oxidation process is highlighted in this review, and the main parameters involved in the process have been studied. Furthermore, the best alternatives aiming to improve the spiro-OMeTAD electrical properties have been discussed. Lastly, this review concludes with suggestions and outlooks for further research directions.
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Affiliation(s)
- Nabonswende Aida Nadege Ouedraogo
- MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems, School of Energy & Power Engineering, Chongqing University, Chongqing 400044, China
| | - George Omololu Odunmbaku
- MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems, School of Energy & Power Engineering, Chongqing University, Chongqing 400044, China
| | - Bing Guo
- MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems, School of Energy & Power Engineering, Chongqing University, Chongqing 400044, China
| | - Shanshan Chen
- MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems, School of Energy & Power Engineering, Chongqing University, Chongqing 400044, China
| | - Xiaoxue Lin
- MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems, School of Energy & Power Engineering, Chongqing University, Chongqing 400044, China
| | - Tatyana Shumilova
- Institute of Geology, FRC Komi Science Center, Ural Branch, Russian Academy of Sciences, Syktyvkar 167982, Russia
| | - Kuan Sun
- MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems, School of Energy & Power Engineering, Chongqing University, Chongqing 400044, China
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Xu W, Zhao G, Li M, Pan Y, Ma H, Sun R, Wang J, Liu Y, Chen C, Huang W, Wang F, Qin T. Tailored Polymeric Hole-Transporting Materials Inducing High-Quality Crystallization of Perovskite for Efficient Inverted Photovoltaic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106632. [PMID: 35460192 DOI: 10.1002/smll.202106632] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2021] [Revised: 03/22/2022] [Indexed: 06/14/2023]
Abstract
For achieving high-performance p-i-n perovskite solar cells (PSCs), hole transporting materials (HTMs) are critical to device functionality and represent a major bottleneck to further enhancing device stability and efficiency in the inverted devices. Three dopant-free polymeric HTMs are developed based on different linkage sites of triphenylamine and phenylenevinylene repeating units in their main backbone structures. The backbone curvatures of the polymeric HTMs affect the morphology and hole mobility of the polymers and further change the crystallinity of perovskite films. By using PTA-mPV with moderate molecular curvature, p-i-n PSCs with high efficiency of 19.5% and long-term stability can be achieved. The better performance is attributed to the more effective hole extraction ability, higher charge-carrier mobility, and lower interfacial charge recombination. Furthermore, these three polymeric HTMs are synthesized without any noble metal catalyst, and show great advantages in future application owing to the low-cost.
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Affiliation(s)
- Wenxin Xu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Guiqiu Zhao
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Mubai Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Yuyu Pan
- School of Petrochemical Engineering, Shenyang University of Technology, 30 Guanghua Street, Liaoyang, 111003, P. R. China
| | - Hongzhuang Ma
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Riming Sun
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Jungan Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - You Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Cheng Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Wei Huang
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu, 210023, China
- Frontiers Science Center for Flexible Electronics and Institute of Flexible Electronics (IFE), Northwestern Polytechnical University (NPU), Xi'an, Shaanxi, 710072, China
| | - Fangfang Wang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, Jiangsu, 211816, China
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