Electron-beam-induced decomposition of trimethylamine on Si(100)-2 × 1

Exploration of M(100)-2×1 (M=Si, Ge) surface termination through hydrogen passivation using ethane and ammonia-borane derivatives: A theoretical approach

Termination process of Si(100)-2 × 1 as well as Ge(100)-2 × 1 reconstructed surfaces have been explored comprehensively through the dehydrogenation of ethane and ammonia-borane and their several analogues by employing density functional theory (DFT). From our study, it is evident that the termination of Si-surface via the dehydrogenation of aforementioned ethane and NH₃BH₃ derivatives is more feasible compared to Ge-surface. For ethane, the investigation shows that the substitution of non-participating hydrogens with +I group (electron donating) causes an enhancement in the kinetic and thermodynamic feasibility of the termination process, whereas the implementation of -I substituent (electron withdrawing) makes an adverse effect. While exploring the termination of Si- as well as Ge-surfaces through the dehydrogenation of NH₃BH₃ and its derivatives, it is noticed that from both the kinetic as well as thermodynamic perspectives, the termination processes are more feasible than that of ethane and its derivatives. We have further examined the detailed mechanism of each termination process by analyzing the geometrical parameters and NPA charges. From bonding evaluation, it is evident that the hydrogen abstraction from ethane by both the surfaces is symmetric in nature, where both the hydrogens show slightly positive charge. But for NH₃BH₃ the hydrogen abstraction process becomes asymmetric, where the boron associated hydrogen is abstracted as hydride by the electrophilic surface Si (Ge) and the hydrogen bonded with the N-centre is abstracted as proton by the nucleophilic surface Si (Ge). Overall, the present theoretical work reveals one of the efficient chemical processes for terminating Si as well as Ge(100)-2 × 1 reconstructed surfaces through the formation of non-polar SiH bonds.

Towards a comprehensive understanding of the Si(100)-2×1 surface termination through hydrogen passivation using methylamine and methanol: a theoretical approach

Using density functional theory, we explored the termination process of Si (100)-2 × 1 reconstructed surface mechanistically through the dehydrogenation of small molecules, considering methyl amine and methanol as terminating reagents. At first, both the terminating reagents form two types of adduct through adsorption on the Si (100)-2 × 1 surface, one in chemisorption mode and the other via physisorption, from which the dehydrogenation process is initiated. By analyzing the activation barriers, it was observed that termination of the Si-surface through the dehydrogenation is kinetically almost equally feasible using either reagent. We further examined in detail the mechanism for each termination process by analyzing geometrical parameters and natural population analysis charges. From bonding evaluation, it is evident that hydrogen abstraction from adsorbates on the Si-surface is asymmetric in nature, where one hydrogen is abstracted as hydride by the electrophilic surface Si and the other hydrogen is abstracted as proton by the neucleophilic surface Si. Moreover, it was also observed that hydride transfer from adsorbate to the Si-surface occurs first followed by proton transfer. Overall, our theoretical interpretation provides a mechanistic understanding of the Si (100)-2 × 1 reconstructed surface termination by amine and alcohol that will further motivate researchers to design different types of decorated semiconductor devices. Graphical Abstract Surface termination process of Si(100)-2×1 through formation of non-polar Si-H bonds via dehydrogenation of methylamine and methanol as terminating reagents.

Electron induced surface reactions of organometallic metal(hfac)₂ precursors and deposit purification

The elementary processes associated with electron beam-induced deposition (EBID) and post-deposition treatment of structures created from three metal(II)(hfac)2 organometallic precursors (metal = Pt, Pd, Cu; hfac = CF3C(O)CHC(O)CF3) have been studied using surface analytical techniques. Electron induced reactions of adsorbed metal(II)(hfac)2 molecules proceeds in two stages. For comparatively low electron doses (doses <1 × 10(17) e(-)/cm(2)) decomposition of the parent molecules leads to loss of carbon and oxygen, principally through the formation of carbon monoxide. Fluorine and hydrogen atoms are also lost by electron stimulated C-F and C-H bond cleavage, respectively. Collectively, these processes are responsible for the loss of a significant fraction (≥ 50%) of the oxygen and fluorine atoms, although most (>80%) of the carbon atoms remain. As a result of these various transformations the reduced metal atoms become encased in an organic matrix that is stabilized toward further electron stimulated carbon or oxygen loss, although fluorine and hydrogen can still desorb in the second stage of the reaction under the influence of sustained electron irradiation as a result of C-F and C-H bond cleavage, respectively. This reaction sequence explains why EBID structures created from metal(II)(hfac)2 precursors in electron microscopes contain reduced metal atoms embedded within an oxygen-containing carbonaceous matrix. Except for the formation of copper fluoride from Cu(II)(hfac)2, because of secondary reactions between partially reduced copper atoms and fluoride ions, the chemical composition of EBID films and behavior of metal(II)(hfac)2 precursors was independent of the transition metal's chemical identity. Annealing studies of EBID structures created from Pt(II)(hfac)2 suggest that the metallic character of deposited Pt atoms could be increased by using post deposition annealing or elevated substrate temperatures (>25 °C) during deposition. By exposing EBID structures created from Cu(II)(hfac)2 to atomic oxygen followed by atomic hydrogen, organic contaminants could be abated without annealing.

Thermal decomposition mechanisms of methylamine, ethylamine, and 1-propylamine on Si(100)-2 × 1 surface

The thermal decomposition reactions of methylamine, ethylamine, and 1-propylamine absorbed on Si(100)-2 × 1 surface were theoretically investigated. Eight decomposition channels were found leading to desorption products of imine, H(2), alkyl cyanide, ammonia, aziridine, alkene, azetidine, and cyclopropane, which supports the experimental assignments. Our mechanistic studies strongly suggest that the alkyl cyanide (hydrogen cyanide in the case of methylamine) channel is coupled with the hydrogen desorption step. The β-hydrogen of ethylamine and 1-propylamine was found to undergo additional decomposition reactions producing aziridine and alkene, which were classified as γ- and β-eliminations, respectively. It was also found that the γ-hydrogen of 1-propylamine undergoes azetidine and cyclopropane producing decompositions, which were classified as δ- and γ-eliminations. In general, γ- and δ-hydrogen involved decomposition reactions are kinetically less favorable than β-hydrogen involved ones. Consequently, it is expected that the thermal decompositions of the primary alkyl amines with longer alkyl chains would not add additional favorable decomposition channels. Except alkyl cyanide and ammonia desorption channels, the decompositions occur in a concerted fashion.