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Xu M, Liu T, Li H, Liu Y, Shan P, Wang R, Kong W, Zhang M, Fan S, Su J. Synaptic memristors based on BaTiO 3 thin films irradiated by swift heavy ions for neuromorphic computing. MATERIALS HORIZONS 2024. [PMID: 39188220 DOI: 10.1039/d4mh00716f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Swift heavy ion (SHI) irradiation is an effective method for modulating the properties of thin oxide films by introducing defects, strains, and structural transformations. Here, we applied 516 MeV Xe31+ irradiation to BaTiO3 (BTO) thin films grown on Nb:SrTiO3 substrates to induce the generation of tracks and nanohillocks. Memristors with BTO films irradiated at a fluence of 5 × 1010 ions cm-2 displayed excellent retention and endurance characteristics. Moreover, the memristors exhibited highly stable synaptic plasticity functions such as excitatory/inhibitory post-synaptic currents (E/IPSC) and paired-pulse facilitation/depression (PPF/D). The memristors achieved a discrimination accuracy of 92.5% on given handwritten digit data by an artificial neural network with supervised learning. These results verify that the judicious application of SHI irradiation on thin oxide films is a viable strategy for exploring neuromorphic computation.
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Affiliation(s)
- Minghui Xu
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Tao Liu
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Hailian Li
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Yong Liu
- School of Energy and Power Engineering, Shandong University, Jinan 250061, China.
| | - Pengshun Shan
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Ruowei Wang
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Weijin Kong
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Minghao Zhang
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Shuangqing Fan
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
| | - Jie Su
- College of Electronic and Information Engineering, College of Physics Science, Qingdao University, Qingdao 266071, China.
- National Laboratory of Solid State Microstructures, Physics Department, Nanjing University, Nanjing 210093, China
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