Surface Depth Analysis of Chemical Changes in Random Copolymer Thin Films Composed of Hydrophilic and Hydrophobic Silicon-Based Monomers Induced by Plasma Treatment as Studied by Hard X-ray Photoelectron Spectroscopy and Neutron Reflectivity Measurements

In this study, a silicon-based copolymer, poly(tris(trimethylsiloxy)-3-methacryloxypropylsilane)-co-poly(N,N-dimethyl acrylamide), thin film was subjected to plasma surface treatment to make its surface hydrophilic (biocompatible). Neutron reflectivity (NR) measurement of the plasma-treated thin film showed a decrease in the film thickness (etching width: ∼20 nm) and an increase in the scattering length density (SLD) near the surface (∼15 nm). The region with a considerably high SLD adsorbed water (D2O) from its saturated vapor, indicating its superior surface hydrophilicity. Nevertheless of the hydrophilicity, the swelling of the thin film was suppressed. Hard X-ray photoelectron spectroscopy (HAXPES) performed at various takeoff angles revealed that the thin-film surface (∼20 nm depth) underwent extensive oxidation. NR and HAXPES analysis quantitatively yielded the depth profiling of elemental compositions in a few tens of nm scale. Si oxidation and hydrogen elimination (probably CH3 groups) in the vicinity of the surface region increased the SLD and decreased the hydrophobicity. A combination of Soft X-ray photoelectron spectroscopy and NR measurements revealed the surface chemical composition and mass density. It was considered that the surface near the film was chemically composed close to SiO2, forming a gel-like (three-dimensional network) structure that is hydrophilic and suppresses swelling due to moisture, indicating it can be expected to maintain stable hydrophilicity on the film surface.

Energy Dissipation of Fast Electrons in Polymethylmethacrylate: Toward a Universal Curve for Electron-Beam Attenuation in Solids between ∼0 eV and Relativistic Energies

Spectroscopy of correlated electron pairs was employed to investigate the energy dissipation process, as well as the transport and the emission of low-energy electrons on a polymethylmethacrylate surface, providing secondary electron spectra causally related to the energy loss of the primary. Two groups are identified in the cascade of slow electrons, corresponding to different stages in the energy dissipation process. The characteristic lengths for attenuation due to collective excitations and momentum relaxation are quantified for both groups and are found to be distinctly different: λ_{1}=(12±2)  Å and λ_{2}=(62±11)  Å. The results strongly contradict the commonly employed model of exponential attenuation with the electron inelastic mean free path as characteristic length, but they essentially agree with a theory used for decades in astrophysics and neutron transport, albeit with characteristic lengths expressed in units of angstroms rather than light-years.

Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20-450 eV

The blur caused by the nonzero mean free path of electrons in photoresists exposed by extreme ultraviolet lithography has detrimental consequences on patterning resolution, but its effect is difficult to quantify experimentally. So far, most mean free path calculations use the dielectric formalism, which is an approximation valid in the optical limit and fails at low kinetic energy. In this work, we used a modified substrate-overlayer technique that exploited the attenuation of the Si 2p core level originating specifically from the native silicon dioxide to evaluate the attenuation of electrons traveling through 2 and 4 nm of photoresist overlayers to provide a close estimation of the inelastic mean free path relevant for photoresist lithography patterning and for electron microscopy. The photoemission spectra were collected in the proximity of the Si 2p edge (binding energy ∼101 eV) using synchrotron light of energy ℏω ranging between 120 and 550 eV. The photoresist films were prototypical chemically amplified resists based on organic copolymer of poly hydroxystyrene and tertbutyl methacrylate with and without triphenyl sulfonium perfluoro-1-butanesufonate photoacid generator and trioctylamine quencher. The inelastic mean free path of electrons, in the range that is relevant for photoresist exposure in extreme ultraviolet lithography (20-92 eV), was found to be between 1 and 2 nm. At higher kinetic energy, the mean free path increased, consistently with the well-known behavior. The presence of the photoacid generator and quencher did not change the mean free path, within experimental error. Our results are discussed and compared with the existing literature on organic molecules measured via dielectric formalism and electron transmission experiments.

Establishment and validation of an electron inelastic mean free path database for narrow bandgap inorganic compounds with a machine learning approach

Narrow bandgap inorganic compounds are extremely important in many areas of physics. However, their basic parameter database for surface analysis is incomplete. Electron inelastic mean free paths (IMFPs) are important parameters in surface analysis methods, such as electron spectroscopy and electron microscopy. Our previous research has presented a machine learning (ML) method to describe and predict IMFPs from calculated IMFPs for 41 elemental solids. This paper extends the use of the same machine learning method to 42 inorganic compounds based on the experience in predicting elemental electron IMFPs. The in-depth discussion extends to including material dependence discussion and parameter value selections. After robust validation of the ML method, we have produced an extensive IMFP database for 12 039 narrow bandgap inorganic compounds. Our findings suggest that ML is very efficient and powerful for IMFP description and database completion for various materials and has many advantages, including stability and convenience, over traditional methods.

Sub-keV corrections to binary encounter cross section models for electron ionization of liquid water with application to the Geant4-DNA Monte Carlo code

INTRODUCTION

The electron ionization cross section of water is one of the most important input in Monte Carlo studies of cellular radiobiological effects. Analytical cross section models of the binary-encounter type have the potential of reducing simulation time and facilitate application to a variety of biological materials (other than water). The Binary-Encounter-Bethe (BEB) and Binary-Encounter-Dipole (BED) models of NIST are perhaps the most popular of such models giving reliable results for atoms and molecules in the gas-phase over a wide energy range. However, the use of such models to sub-keV electron energies in liquid water raises concerns due to the neglect of condensed phase effects that leads to a significant overestimation when compared to medium-specific dielectric models.

PURPOSE

To modify the BEB and BED models towards better agreement with the recommended low-energy dielectric model of Geant4-DNA (Option 4). To implement the new modifications to the existing BEB model of the Option 6 physics constructor of Geant4-DNA and re-evaluate fundamental transport quantities for sub-keV electrons.

METHODS

In analogy to a Yukawa potential a simple, yet physically-motivated, modification of the Burgess correction term is proposed to account for the reduction of the Coulomb interaction due to the polarizability of the target. The magnitude of the correction is guided by the dielectric-based ionization cross section implemented in Option 4.

RESULTS

Differential, total and stopping ionization cross sections for low-energy electrons in liquid water are presented. When combined with the Vriens correction (which is not included in Option 6), the proposed modification to the BEB and BED models brings the ionization and stopping cross sections in much better agreement against those used in the Option 4 dielectric model of Geant4-DNA, with up to 30% and 10% deviation, respectively. Implementation of the new correction to the Option 6 constructor of Geant4-DNA and re-evaluation of fundamental transport quantities, such as electron penetration ranges and dose-point-kernels, reduced the discrepancies from Option 4 at sub-keV energies from 20 to 100% (or more) to well below 10% in most cases.

CONCLUSIONS

A simple modification to the BEB and BED analytic models was found to improve their performance for sub-keV electrons in liquid water medium. Implementation of the new modification to the Option 6 constructor of Geant4-DNA significantly improved the agreement with the recommended low-energy Option 4 constructor for a variety of fundamental quantities related to electron transport.

Photoionization of the aqueous phase: clusters, droplets and liquid jets

This perspective article reviews specific challenges associated with photoemission spectroscopy of bulk liquid water, aqueous solutions, water droplets and water clusters. The main focus lies on retrieving accurate energetics and photoelectron angular information from measured photoemission spectra, and on the question how these quantities differ in different aqueous environments. Measured photoelectron band shapes, vertical binding energies (ionization energies), and photoelectron angular distributions are influenced by various phenomena. We discuss the influences of multiple energy-dependent electron scattering in aqueous environments, and we discuss different energy referencing methods, including the application of a bias voltage to access absolute energetics of solvent and solute. Recommendations how to account for or minimize the influence of electron scattering are provided. The example of the hydrated electron in different aqueous environments illustrates how one can account for electron scattering, while reliable methods addressing parasitic potentials and proper energy referencing are demonstrated for ionization from the outermost valence orbital of neat liquid water.

Inelastic scattering of electrons in water from first principles: cross sections and inelastic mean free path for use in Monte Carlo track-structure simulations of biological damage

Modelling the inelastic scattering of electrons in water is fundamental, given their crucial role in biological damage. In Monte Carlo track-structure (MC-TS) codes used to assess biological damage, the energy loss function (ELF), from which cross sections are extracted, is derived from different semi-empirical optical models. Only recently have first ab initio results for the ELF and cross sections in water become available. For benchmarking purpose, in this work, we present ab initio linear-response time-dependent density functional theory calculations of the ELF of liquid water. We calculated the inelastic scattering cross sections, inelastic mean free paths, and electronic stopping power and compared our results with recent calculations and experimental data showing a good agreement. In addition, we provide an in-depth analysis of the contributions of different molecular orbitals, species and orbital angular momenta to the total ELF. Moreover, we present single-differential cross sections computed for each molecular orbital channel, which should prove useful for MC-TS simulations.

Inelastic scattering of electrons in water from first principles: cross sections and inelastic mean free path for use in Monte Carlo track-structure simulations of biological damage

Modelling the inelastic scattering of electrons in water is fundamental, given their crucial role in biological damage. In Monte Carlo track-structure (MC-TS) codes used to assess biological damage, the energy loss function (ELF), from which cross sections are extracted, is derived from different semi-empirical optical models. Only recently have first ab initio results for the ELF and cross sections in water become available. For benchmarking purpose, in this work, we present ab initio linear-response time-dependent density functional theory calculations of the ELF of liquid water. We calculated the inelastic scattering cross sections, inelastic mean free paths, and electronic stopping power and compared our results with recent calculations and experimental data showing a good agreement. In addition, we provide an in-depth analysis of the contributions of different molecular orbitals, species and orbital angular momenta to the total ELF. Moreover, we present single-differential cross sections computed for each molecular orbital channel, which should prove useful for MC-TS simulations.