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Huang L, Zhu Z, Cheng C, Gao Y. A parylene/graphene UV photodetector with ultrahigh responsivity and long term stability. NANOTECHNOLOGY 2024; 35:365202. [PMID: 38744249 DOI: 10.1088/1361-6528/ad4b25] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/14/2024] [Indexed: 05/16/2024]
Abstract
Long term stability, high responsivity, and fast response speed are essential for the commercialization of graphene photodetectors (GPDs). In this work, a parylene/graphene UV photodetector with long term stability, ultrahigh responsivity and fast response speed, is demonstrated. Parylene as a stable physical and chemical insulating layer reduces the environmental sensitivity of graphene, and enhances the performances of GPDs. In addition, utilizing bilayer electrodes reduces the buckling and damage of graphene after transferring. The parylene/graphene UV photodetector exhibits an ultrahigh responsivity of 5.82 × 105AW-1under 325 nm light irradiation at 1 V bias. Additionally, it shows a fast response speed with a rise time of 80μs and a fall time of 17μs, and a long term stability at 405 nm wavelength which is absent in the device without parylene. The parylene/graphene UV photodetector possesses superior performances. This paves the way for the commercial application of the high-performance graphene hybrid photodetectors, and provides a practical method for maintaining the long term stability of two dimensional (2D) materials.
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Affiliation(s)
- Liting Huang
- College of Science, China Agricultural University, Beijing 100083, People's Republic of China
| | - Zhaowei Zhu
- College of Science, China Agricultural University, Beijing 100083, People's Republic of China
| | - Chuantong Cheng
- Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Y Gao
- College of Science, China Agricultural University, Beijing 100083, People's Republic of China
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Li S, Wang F, Dong S, Dou H, Wang T, Wang HE. Sizeable square CsPb 2Br 5 nanosheets for photodetection. Chem Commun (Camb) 2024; 60:4679-4682. [PMID: 38591727 DOI: 10.1039/d4cc00338a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
All-inorganic perovskites have garnered significant attention in optoelectronics. Herein, square CsPb2Br5 nanosheets, with lateral dimensions of up to 200 μm and a thickness of less than 50 nm, were successfully synthesized via a straightforward aqueous method using HBr as a morphology-tailoring agent. A photodetector composed of a single nanosheet was subsequently fabricated and exhibited remarkable photodetection capabilities, demonstrating a detectivity of 5.98 × 109 Jones. These findings offer new perspectives on the synthesis and utilization of CsPb2Br5 and other perovskite nanostructures in optoelectronic devices.
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Affiliation(s)
- Shuang Li
- College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.
| | - Fenyun Wang
- College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.
| | - Shunhong Dong
- College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.
| | - Haoyun Dou
- College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.
| | - Tingfeng Wang
- College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.
| | - Hong-En Wang
- College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China.
- Yunnan Key Laboratory of Optoelectronic Information Technology, Yunnan Normal University, Kunming 650500, China.
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Mukherjee S, Bhattacharya D, Ray SK, Pal AN. High-Performance Broad-Band Photodetection Based on Graphene-MoS 2xSe 2(1-x) Alloy Engineered Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34875-34883. [PMID: 35880297 DOI: 10.1021/acsami.2c08933] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The concept of alloy engineering has emerged as a viable technique toward tuning the band gap as well as engineering the defect levels in two-dimensional transition-metal dichalcognides (TMDCs). The possibility of synthesizing these ultrathin TMDC materials through a chemical route has opened up realistic possibilities to fabricate hybrid multifunctional devices. By synthesizing nanosheets with different composites of MoS2xSe2(1-x) (x = 0 - 1) using simple chemical methods, we systematically investigate the photoresponse properties of three terminal hybrid devices by decorating large-area graphene with these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them, the graphene-MoSSe hybrid phototransistor exhibits optoelectronic properties superior to those of its binary counterparts. The device exhibits extremely high photoresponsivity (>104 A/W), low noise equivalent power (∼10-14 W/Hz0.5), and higher specific detectivity (∼1011 jones) in the wide UV-NIR (365-810 nm) range with excellent gate tunability. The broad-band light absorption of MoSSe, ultrafast charge transport in graphene, and controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large-area scalability with the wafer-scale production of MoS2xSe2(1-x) alloys, having important implications toward the facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van der Waals materials.
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Affiliation(s)
- Shubhrasish Mukherjee
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
| | - Didhiti Bhattacharya
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
| | - Samit Kumar Ray
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
- Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India
| | - Atindra Nath Pal
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake 700106, Kolkata, India
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AlAbdulaal T, AlShadidi M, Hussien M, Ganesh V, Bouzidi AF, Rafique S, Algarni H, Zahran H, Abdel-Wahab M, Yahia I. Multifunctional and smart Er 2O 3-ZnO nanocomposites for electronic ceramic varistors and visible light degradation of wastewater treatment. ENVIRONMENTAL SCIENCE AND POLLUTION RESEARCH INTERNATIONAL 2022; 29:19109-19131. [PMID: 34713401 DOI: 10.1007/s11356-021-16754-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2021] [Accepted: 09/22/2021] [Indexed: 06/13/2023]
Abstract
In this proposed study, erbium (Er3+)-doped ZnO nanocomposites were prepared through the effective, basic, and green combustion method. The significant effects of Er dopants on the structural, morphological features, dielectric, and optical behaviors of the pure ZnO matrix as well as Er2O3-ZnO nanostructured materials were investigated applying X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared (FT-IR) spectroscopy, and UV-Vis spectrophotometer techniques. These results showed that the synthesized Er2O3-ZnO nanocomposites are well polycrystalline. The Er2O3-ZnO nanocomposites are almost uniformly distributed on the surface morphologies. Furthermore, UV-Vis diffuse reflectance spectroscopy, AC electrical conductivity, and dielectric properties' current-voltage characteristics were utilized to examine the influence of erbium doping on the optical properties, energy bandgaps of the proposed Er2O3-ZnO nanostructured powder. The tested nano-samples were applied for the visible light photodegradation of p-chlorophenol(4-CP) and p-nitrophenol (4-NP). The Er-doped ZnO ratio affects the photocatalytic activity of the ZnO matrix. This current research substantiated that more than 99.5% of 4-CP and 4-NP were photodegraded through 30 min of irradiation. Four times, the Er:ZnO nanocatalysts were used and still displayed an efficiency of more than 96.5% for 4-CP and 4-NP degradations in the specified period of 30 min. The as-prepared Er2O3-ZnO nanostructures are considered novel potential candidates in broad nano-applications from visible photocatalytic degradation of waste pollutants to the electronic varistor devices.
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Affiliation(s)
- Thekrayat AlAbdulaal
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia.
| | - Manal AlShadidi
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Mai Hussien
- Department of Chemistry, Faculty of Education, Ain Shams University, Roxy, Cairo, 11757, Egypt
- Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Metallurgical Lab.1. Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, 11757, Egypt
| | - Vanga Ganesh
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Abdel-Fatah Bouzidi
- Research Unit, Physics of Insulating and Semi-insulating Materials, Faculty of Sciences, University of Sfax, B.P.1171, 3000, Sfax, Tunisia
| | - Saqib Rafique
- Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea, SA1 8EN, United Kingdom
| | - Hamed Algarni
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Heba Zahran
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Metallurgical Lab.1. Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, 11757, Egypt
| | - Mohamed Abdel-Wahab
- Center of Nanotechnology, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Ibrahim Yahia
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Nanoscience Laboratory for Environmental and Bio-medical Applications (NLEBA), Semiconductor Lab., Metallurgical Lab.1. Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, 11757, Egypt
- Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 102] [Impact Index Per Article: 51.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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Nguyen XH, Luong HN, Pham HA, Nguyen NM, Dang VQ. Visible photodetector based on transition metal-doped ZnO NRs/PEDOT:PSS hybrid materials. RSC Adv 2021; 11:36340-36347. [PMID: 35492744 PMCID: PMC9043369 DOI: 10.1039/d1ra06315d] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Accepted: 10/15/2021] [Indexed: 01/26/2023] Open
Abstract
A hybrid Cu-doped ZnO nanorods (ZnO:Cu NRs)/poly(3,4 ethylene dioxythiophene)-polystyrene sulfonate (PEDOT:PSS)-based photodetector was fabricated using a simple hydrothermal method with pre-patterned silver electrodes. In the hybrid structure, PEDOT:PSS with high mobility acts as a carrier transport layer, while ZnO:Cu NRs with high visible absorption works as an “antenna” material to generate electron–hole pairs under light illumination. As a result, the devices exhibits a high response in visible light at a wavelength of 395 nm. The responsivity and photoconductive gain of the hybrid photodetector reached 0.33 A W−1 and 1.306, respectively, which is 1.36 times higher than those of Cu-doped ZnO NRs-based ones. The response and recovery times are improved, with values of 25.21 s and 42.01 s, respectively. The development of hybrid materials for visible photodetectors enables an innovative approach for future optoelectronic devices, especially optical sensors. This study reports the fabrication of a hybrid photodetector based on Cu-doped ZnO NRs/PEDOT:PSS, which improves the device's performance and applications.![]()
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Affiliation(s)
- Xuan Hao Nguyen
- Thu Dau Mot University Phu Hoa Ward Thu Dau Mot City Binh Duong Province Vietnam
| | - Hoai Nhan Luong
- Department of Materials Science and Technology, University of Science Ward 4, District 5 Ho Chi Minh City Vietnam .,Vietnam National University, Ho Chi Minh (VNU-HCM) Linh Trung Ward, Thu Duc District Ho Chi Minh City Vietnam
| | - Hoang Anh Pham
- Department of Materials Science and Technology, University of Science Ward 4, District 5 Ho Chi Minh City Vietnam .,Vietnam National University, Ho Chi Minh (VNU-HCM) Linh Trung Ward, Thu Duc District Ho Chi Minh City Vietnam
| | - Nhat Minh Nguyen
- Department of Materials Science and Technology, University of Science Ward 4, District 5 Ho Chi Minh City Vietnam .,Vietnam National University, Ho Chi Minh (VNU-HCM) Linh Trung Ward, Thu Duc District Ho Chi Minh City Vietnam
| | - Vinh Quang Dang
- Department of Materials Science and Technology, University of Science Ward 4, District 5 Ho Chi Minh City Vietnam .,Vietnam National University, Ho Chi Minh (VNU-HCM) Linh Trung Ward, Thu Duc District Ho Chi Minh City Vietnam.,Center for Innovative Materials and Architectures (INOMAR) Quarter 6, Linh Trung Ward, Thu Duc District Ho Chi Minh City Vietnam
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Huang PY, Qin JK, Zhu CY, Zhen L, Xu CY. 2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:493001. [PMID: 34479213 DOI: 10.1088/1361-648x/ac2388] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.
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Affiliation(s)
- Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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Jezeh ZA, Efafi B, Ghafary B. The effect of electrode shape on Schottky barrier and electric field distribution of flexible ZnO photodiode. Sci Rep 2021; 11:15604. [PMID: 34341440 PMCID: PMC8329072 DOI: 10.1038/s41598-021-95203-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 07/22/2021] [Indexed: 02/07/2023] Open
Abstract
In this study, the effect of electrode shape difference on the height of the Schottky barrier and the electric field in flexible photodiodes (PDs) has been investigated. For this purpose, three different electrode designs were prepared on three flexible FR4 layers that were coated with Zinc Oxide (ZnO). The printing circuit board (PCB) method was used to create these copper electrodes. The asymmetry of the PD electrodes and the difference in the height of the Schottky barrier has led to the creation of self-powered PDs. The effect of the amount and shape of the distribution of internal electric fields generated in the PDs and its effect on the parameters of the PDs has been investigated with the help of simulations performed in COMSOL software. The photocurrent of the sample with circular and rectangular electrodes was equal to 470 µA in 15 V bias, which was twice as good as a sample with an interdigitated MSM structure. Also, this sample had the best response time among these three samples, which was equal to 440 ms.
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Affiliation(s)
- Zahra Aminrayai Jezeh
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran
| | - Babak Efafi
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran.
- Nano Photonics Lab, Applied Science Research Center, Kharazmi University, Alborz, Iran.
| | - Bijan Ghafary
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran
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Kumar A, Varghese A, Yadav S, Prasad M, Janyani V, Yadav RP. Influence of Temperature on Graphene/ZnO Heterojunction Schottky Diode Characteristics. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 2021; 21:3165-3170. [PMID: 33653492 DOI: 10.1166/jnn.2021.19084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The paper reports development of graphene/ZnO heterojunction Schottky diode structure and its structural and electrical characterization. Graphene is grown on copper substrate using chemical vapor deposition (CVD) and transferred on flexible substrate (indium Tin Oxide coated PET). The grown thin layer is characterized using scanning electron microscopy and Raman spectroscopy which confirm uniformity and high-quality graphene layer. The sputtered ZnO is deposited and characterized which confirms c-axis (002) orientation and uniform growth of ZnO film. Silver (Ag) as a top electrode has been deposited and I-V measurement has been done. The effect of operating temperature (300 K to 425 K) on I-V characteristics of the fabricated structure has been measured experimentally. The other diode parameters such as ideality factor and effective barrier height have been derived. The reliability of the heterojunction synthesized is proved by the diode ideality factor of 1.03 attained at 425 K. The excellent C-V characteristics (capacitance of 48pF) of the device prove that the device is an excellent candidate for application as supercapacitors. The fabricated structure can be utilized as an ultraviolet photodetector, solar cell, energy storage devices, etc.
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Affiliation(s)
- Ashish Kumar
- Department of Electronics and Communication, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Arathy Varghese
- Material Research Centre, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Shriniwas Yadav
- Material Research Centre, Malaviya National Institute of Technology, Jaipur 302017, India
| | - Mahanth Prasad
- Transducers and Actuators Group, Council of Scientific and Industrial Research (CSIR), Central Electronics Engineering Research Institute, Pilani 333031, India
| | - Vijay Janyani
- Department of Electronics and Communication, Malaviya National Institute of Technology, Jaipur 302017, India
| | - R P Yadav
- Department of Electronics and Communication, Malaviya National Institute of Technology, Jaipur 302017, India
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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11
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Luo G, Zhang Z, Jiang J, Liu Y, Li W, Zhang J, Hao X, Wang W. Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers. RSC Adv 2021; 11:7682-7692. [PMID: 35423239 PMCID: PMC8695045 DOI: 10.1039/d0ra10420e] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Accepted: 01/14/2021] [Indexed: 11/21/2022] Open
Abstract
Facile, convenient and low-cost processes, including a chemical hydrothermal method and impregnation technique, were demonstrated to fabricate a self-powered ZnO nanorod array/CuSCN/reduced graphene oxide (rGO) ultraviolet photodetector. ZnO nanorods (NRs) were fully filled and encased by the CuSCN layer, in which CuSCN acts as the primary hole-transport layer and an electron reflection layer, blocking the electron transfer towards the Au electrode and reducing the electron-hole pair recombination. After annealing, this encapsulated structure further reduces the surface state defects of ZnO NRs, which can isolate the electron exchange with oxygen in the air, dramatically reducing the rise and fall time; it also forms a p-n junction, providing a built-in electric field to improve the photoresponse without applying external power. The rGO layer was coated on the surface of CuSCN as the secondary hole-transport layer and then annealed, which could effectively block Au from entering CuSCN and contacting ZnO along cracks and holes during vapor deposition, avoiding the formation of leakage channels. Furthermore, due to the ultra-high carrier mobility and the increase in work function after Au doping, the functionalized graphene could reduce the valence band shift, which is beneficial to enhance hole transport. Meanwhile, rGO obstructs the undesired barrier formed by electrical potential-induced reaction of Au with thiocyanate anions. Finally, the ZnO NR/CuSCN/rGO ultraviolet photodetector exhibits a significant enhancement in device performance (responsivity: 18.65 mA W-1 at 375 nm under 65 mW cm-2 illumination, rectification ratio: 5690 at ±1 V), which is better that of than ZnO NR/CuSCN structure (10.88 mA W-1, 10.22 at ±1 V) and maintains the 100 ms response time.
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Affiliation(s)
- Guangcan Luo
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Ziling Zhang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Jing Jiang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Yang Liu
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Wei Li
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Jingquan Zhang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
| | - Xia Hao
- Institute of New Energy and Low-carbon Technology, Sichuan University Chengdu 610027 China
| | - Wenwu Wang
- College of Materials Science and Engineering, Sichuan University Chengdu 610064 China +86-28-85412542
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12
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Adsorption of NH3 and NO2 molecules on the carbon doped C3N monolayer: A first principles study. COMPUT THEOR CHEM 2021. [DOI: 10.1016/j.comptc.2020.113075] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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13
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Tong XW, Lin YN, Huang R, Zhang ZX, Fu C, Wu D, Luo LB, Li ZJ, Liang FX, Zhang W. Direct Tellurization of Pt to Synthesize 2D PtTe 2 for High-Performance Broadband Photodetectors and NIR Image Sensors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:53921-53931. [PMID: 33202136 DOI: 10.1021/acsami.0c14996] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Platinum telluride (PtTe2) has garnered significant research enthusiasm owing to its unique characteristics. However, large-scale synthesis of PtTe2 toward potential photoelectric and photovoltaic application has not been explored yet. Herein, we report direct tellurization of Pt nanofilms to synthesize large-area PtTe2 films and the influence of growth conditions on the morphology of PtTe2. Electrical analysis reveals that the as-grown PtTe2 films exhibit typical semimetallic behavior, which is in agreement with the results of first-principles density functional theory (DFT) simulation. Moreover, the combination of multilayered PtTe2 and Si results in the formation of a PtTe2/Si heterojunction, exhibiting an obvious rectifying effect. Moreover, the PtTe2-based photodetector displays a broadband photoresponse to incident radiation in the range of 200-1650 nm, with the maximum photoresponse at a wavelength of ∼980 nm. The R and D* of the PtTe2-based photodetector are found to be 0.406 A W-1 and 3.62 × 1012 Jones, respectively. In addition, the external quantum efficiency is as high as 32.1%. On the other hand, the response time of τrise and τfall is estimated to be 7.51 and 36.7 μs, respectively. Finally, an image sensor composed of a 8 × 8 PtTe2-based photodetector array was fabricated, which can record five near-infrared (NIR) images under 980 nm with a satisfying resolution. The result demonstrates that the as-prepared PtTe2 material will be useful for application in NIR optoelectronics.
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Affiliation(s)
- Xiao-Wei Tong
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Ya-Nan Lin
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Rui Huang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Zhi-Xiang Zhang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Can Fu
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Di Wu
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lin-Bao Luo
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Zhong-Jun Li
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Feng-Xia Liang
- School of Materials Science and Engineering, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Anhui 230009, China
| | - Wei Zhang
- Academy of Optoelectronic Technology, National Engineering Laboratory of Special Display Technology, Hefei University of Technology, Hefei 230009, China
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14
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Luo LB, Zhang XX, Li C, Li JX, Zhao XY, Zhang ZX, Chen HY, Wu D, Liang FX. Fabrication of PdSe2/GaAs heterojunction for sensitive near-infrared photovoltaic detector and image sensor application. CHINESE J CHEM PHYS 2020. [DOI: 10.1063/1674-0068/cjcp2005066] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Affiliation(s)
- Lin-bao Luo
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Xiu-xing Zhang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Chen Li
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Jia-xiang Li
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Xing-yuan Zhao
- School of Materials Sciences and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Zhi-xiang Zhang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Hong-yun Chen
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Di Wu
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Feng-xia Liang
- School of Materials Sciences and Engineering, Hefei University of Technology, Hefei 230009, China
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15
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Hu Q, Wang P, Yin J, Liu Y, Lv B, Zhu JL, Dong Z, Zhang W, Ma W, Sun J. High-Responsivity Photodetector Based on a Suspended Monolayer Graphene/RbAg 4I 5 Composite Nanostructure. ACS APPLIED MATERIALS & INTERFACES 2020; 12:50763-50771. [PMID: 33136365 DOI: 10.1021/acsami.0c17751] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Graphene has excellent electrical, optical, thermal, and mechanical properties that make it an ideal optoelectronic material. However, it still has some problems, such as a very low light absorption rate, which means it cannot meet the application requirements of high-performance optoelectronic devices. Here, we produce a high-responsivity photodetector based on a monolayer graphene/RbAg4I5 composite nanostructure. With the aid of poly(methyl methacrylate), we suspend the monolayer graphene on a hollow carving groove with a width of 100 μm. A RbAg4I5 film evaporated on the back of the graphene causes the composite nanostructure to generate a large photocurrent under periodic illumination. Experimental results show that the dissociation and recombination of ion-electron bound states (IEBSs) are responsible for the excellent photoresponse. The device has very high (>1 A W-1) responsivity in wide-band illumination wavelength from 375 nm to 808 nm, especially at 375 nm, where it shows a responsivity of up to ∼5000 A W-1. We designed the dimensions of the carving groove to allow the light spot to cover the entire groove, and we cut the graphene sheet to match the length of the carving groove. With the structural optimizations, the energy of light can be used more efficiently to dissociate the IEBSs, which greatly improves the photoresponse of optoelectronic devices based on the proposed monolayer graphene/RbAg4I5 composite nanostructure.
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Affiliation(s)
- Qianqian Hu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Pengfei Wang
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, P. R. China
| | - Jun Yin
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin 300350, P. R. China
| | - Yu Liu
- School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou 350108, P. R. China
| | - Bocheng Lv
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Jia-Lin Zhu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Zhanmin Dong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Wei Zhang
- Institute of Applied Physics and Computational Mathematics, P.O. Box 8009 (28), Beijing 100088, P. R. China
| | - Wanyun Ma
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
| | - Jialin Sun
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, P. R. China
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16
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Liu JY, Liu C, Yu J. Theoretical investigation of the interaction of gas molecules with Pt-adsorbed arsenene monolayers. COMPUT THEOR CHEM 2020. [DOI: 10.1016/j.comptc.2020.112977] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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17
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Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs. MICROMACHINES 2020; 11:mi11090842. [PMID: 32911711 PMCID: PMC7569792 DOI: 10.3390/mi11090842] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Revised: 09/03/2020] [Accepted: 09/05/2020] [Indexed: 11/16/2022]
Abstract
With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5-10 years, thus drawing a line for future research.
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18
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Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection. MICROMACHINES 2020; 11:mi11090812. [PMID: 32867054 PMCID: PMC7570377 DOI: 10.3390/mi11090812] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/14/2020] [Revised: 08/24/2020] [Accepted: 08/25/2020] [Indexed: 11/21/2022]
Abstract
This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm2) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 103 cm2/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 1012 cmHz1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.
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19
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Meng J, Li Z. Schottky-Contacted Nanowire Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000130. [PMID: 32484268 DOI: 10.1002/adma.202000130] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2020] [Revised: 03/16/2020] [Accepted: 03/22/2020] [Indexed: 06/11/2023]
Abstract
The progress of the Internet-of-Things in the past few years has necessitated the support of high-performance sensors. Schottky-contacted nanowire sensors have attracted considerable attention owing to their high sensitivity and fast response time. Their progress is reviewed here, based on several kinds of important nanowires, for applications such as bio/chemical sensors, gas sensors, photodetectors, and strain sensors. Although Schottky-contacted nanowire sensors deliver excellent performance in these fields, they can be further improved by various methods, including defect engineering, surface modification, the piezotronic effect, and the piezophototronic effect, all of which are discussed here. With regard to practical applications, further efforts are required to address challenges such as the stability, selectivity, ultrafast response, multifunctionality, flexibility, distributed energy supply, and sustainability of Schottky-contacted nanowire sensors. Finally, future perspectives and solutions are discussed.
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Affiliation(s)
- Jianping Meng
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhou Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- Center of Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
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20
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Choi MS, Park T, Kim WJ, Hur J. High-Performance Ultraviolet Photodetector Based on a Zinc Oxide Nanoparticle@Single-Walled Carbon Nanotube Heterojunction Hybrid Film. NANOMATERIALS 2020; 10:nano10020395. [PMID: 32102300 PMCID: PMC7075298 DOI: 10.3390/nano10020395] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Revised: 02/19/2020] [Accepted: 02/21/2020] [Indexed: 11/16/2022]
Abstract
A hybrid film consisting of zinc oxide nanoparticles (ZnO NPs) and carbon nanotubes (CNTs) is formed on a glass substrate using a simple and swift spin coating process for the use in ultraviolet photodetectors (UV PDs). The incorporation of various types of CNTs into ZnO NPs (ZnO@CNT) enhances the performance of UV PDs with respect to sensitivity, photoresponse, and long-term operation stability when compared with pristine ZnO NP films. In particular, the introduction of single-walled CNTs (SWNTs) exhibits a superior performance when compared with the multiwalled CNTs (MWNTs) because SWNTs can not only facilitate the stability of free electrons generated by the O2 desorption on ZnO under UV irradiation owing to the built-in potential between ZnO and SWNT heterojunctions, but also allow facile and efficient transport pathways for electrons through SWNTs with high aspect ratio and low defect density. Furthermore, among the various SWNTs (arc-discharged (A-SWNT), Hipco (H-SWNT), and CoMoCat (C-SWNT) SWNTs), we demonstrate the ZnO@A-SWNT hybrid film exhibits the best performance because of higher conductivity and aspect ratio in A-SWNTs when compared with those of other types of SWNTs. At the optimized conditions for the ZnO@A-SWNT film (ratio of A-SWNTs and ZnO NPs and electrode distance), ZnO@A-SWNT displays a sensitivity of 4.9 × 103 % with an on/off current ratio of ~104 at the bias of 2 V under the UV wavelength of 365 nm (0.47 mW/cm2). In addition, the stability in long-term operation and photoresponse time are significantly improved by the introduction of A-SWNTs into the ZnO NP film when compared with the bare ZnO NPs film.
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Affiliation(s)
- Myung-Soo Choi
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do 13120, Korea; (M.-S.C.); (T.P.)
| | - Taehyun Park
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do 13120, Korea; (M.-S.C.); (T.P.)
| | - Woo-Jae Kim
- Department of Chemical Engineering and Material Science, Ewha Womans University, Seoul 03760, Korea
- Correspondence: (W.J.); (J.H.); Tel.: +82-2-3277-4372 (W.J.); +82-2-750-5593 (J.H.)
| | - Jaehyun Hur
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do 13120, Korea; (M.-S.C.); (T.P.)
- Correspondence: (W.J.); (J.H.); Tel.: +82-2-3277-4372 (W.J.); +82-2-750-5593 (J.H.)
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21
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Maurya MR, Toutam V, Bathula S, Pal P, Gupta BK. Wide spectral photoresponse of template assisted out of plane grown ZnO/NiO composite nanowire photodetector. NANOTECHNOLOGY 2020; 31:025705. [PMID: 31603863 DOI: 10.1088/1361-6528/ab474e] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Zinc oxide (ZnO) one-dimensional nanostructures are extensively used in ultra-violet (UV) detection. To improve the optical sensing capability of ZnO, various nickel oxide (NiO) based p-n junctions have been employed. ZnO/NiO heterojunction based sensing has been limited to UV detection and not been extended to the visible region. In the present work, p-NiO/n-ZnO composite nanowire (NW) heterojunction based UV-visible photodetector is fabricated. A porous anodic aluminum oxide template based electrochemical deposition method is adopted for well separated and vertically aligned growth of composite NWs. The photoresponse is studied in an out of plane contact configuration. The fabricated photodetector shows fast response under UV-visible light with a rise and decay time of tens of ms. The wide spectral photoresponse is analyzed in terms of conduction from defect states of ZnO and interfacial defects during p-n junction formation. Light interaction with heterojunction along the length of the composite NW results in enhanced visible photoresponse of the detector and is further supported by simulation.
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Affiliation(s)
- Muni Raj Maurya
- CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India. Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India
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22
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Zhou Q, Park JG, Kim T. Heterogeneous semiconductor nanowire array for sensitive broadband photodetector by crack photolithography-based micro-/nanofluidic platforms. RSC Adv 2020; 10:23712-23719. [PMID: 35517338 PMCID: PMC9054822 DOI: 10.1039/d0ra03784b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2020] [Accepted: 06/14/2020] [Indexed: 11/21/2022] Open
Abstract
The in situ growth of nanowires (NWs) into nano-/microelectromechanical systems (NEMS/MEMS) by solution processing is attractive for its relative simplicity and economic value.
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Affiliation(s)
- Qitao Zhou
- Engineering Research Center of Nano-Geomaterials of the Ministry of Education
- Faculty of Materials Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- China
| | - Jun Gyu Park
- Department of Mechanical Engineering
- Ulsan National Institute of Science and Technology (UNIST)
- Ulsan 44919
- Republic of Korea
| | - Taesung Kim
- Department of Mechanical Engineering
- Ulsan National Institute of Science and Technology (UNIST)
- Ulsan 44919
- Republic of Korea
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23
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Cook B, Gong M, Corbin A, Ewing D, Tramble A, Wu J. Inkjet-Printed Imbedded Graphene Nanoplatelet/Zinc Oxide Bulk Heterojunctions Nanocomposite Films for Ultraviolet Photodetection. ACS OMEGA 2019; 4:22497-22503. [PMID: 31909332 PMCID: PMC6941389 DOI: 10.1021/acsomega.9b03173] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2019] [Accepted: 12/05/2019] [Indexed: 05/10/2023]
Abstract
A ZnO sol-gel precursor (ZnOPr) and graphene nanoplatelets (GnPs) are mixed into a composite ink for inkjet printing photodetectors with bulk heterojunctions of ZnO/GnP on a heated SiO2/Si substrate. Heating of the SiO2/Si wafers at ∼50 °C was found optimal to prevent segregated droplets on the hydrophobic surface of the SiO2/Si substrate during printing. After printing the ZnO/GnP channels, thermal annealing at 350 °C for 2 h was performed for crystallization of ZnO and formation of the ZnO/GnP heterojunctions. The GnP concentration was varied from 0, 5, 20, and 30 mM to evaluate optimal formation of the ZnO/GnP bulk heterojunction nanocomposites based on ultraviolet photoresponse performance. The best performance was observed at the 20 mM GnP concentration with the photoresponsivity reaching 2.2 A/W at an incident ultraviolet power of 2.2 μW and a 5 V bias. This photoresponsivity is an order of magnitude better than the previously reported counterparts, including 0.13 mA/W for dropcasted ZnO-graphite composites and much higher than 0.5 A/W for aerosol printed ZnO. The improved performance is attributed to the ZnO/GnP bulk heterojunctions with improved interfaces that enable efficient exciton dissociation and the charge transport. The developed inkjet printing of sol-gel composite inks approach can be scalable and low cost for practical applications.
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Affiliation(s)
- Brent Cook
- Department
of Physics and Astronomy, University of
Kansas, Lawrence, Kansas 66045, United States
| | - Maogang Gong
- Department
of Physics and Astronomy, University of
Kansas, Lawrence, Kansas 66045, United States
| | - Alex Corbin
- Shawnee
Mission East High School, 7500 Mission Road, Prairie Village, Kansas 66208, United
States
| | - Dan Ewing
- Department
of Energy’s National Security Campus, Kansas City, Missouri 64147, United States
| | - Ashley Tramble
- Department
of Energy’s National Security Campus, Kansas City, Missouri 64147, United States
| | - Judy Wu
- Department
of Physics and Astronomy, University of
Kansas, Lawrence, Kansas 66045, United States
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24
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Zhang D, Lin W, Liu S, Zhu Y, Lin R, Zheng W, Huang F. Ultra-Robust Deep-UV Photovoltaic Detector Based on Graphene/(AlGa) 2O 3/GaN with High-Performance in Temperature Fluctuations. ACS APPLIED MATERIALS & INTERFACES 2019; 11:48071-48078. [PMID: 31804060 DOI: 10.1021/acsami.9b18352] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A strategy of adopting Ga2O3 alloyed with Al element to reduce the oxygen vacancy defect density and enhance the interface barrier height of Ga2O3 heterojunction is proposed to fabricate deep-UV photovoltaic detectors with high thermal stability, high photoresponsivity, and fast response speed. Here, a graphene/(AlGa)2O3/GaN device with a photoresponsivity of ∼20 mA/W, a rise time of ∼2 μs, and a decay time of ∼10 ms is presented at 0 V bias. At the working temperature of 453 K, the device still exhibits a photo-to-dark current ratio (PDCR) of ∼1.8 × 103, which is 1-2 orders of magnitude higher than that of the reported high-temperature deep-UV film detectors. By comparing the formation energy of oxygen vacancy defects and the interface barrier height of the heterojunction at different temperatures in graphene/Ga2O3/GaN and graphene/(AlGa)2O3/GaN systems, the strategy of synthesizing (AlGa)2O3 ternary composite alloy is proved to be reliable for fabricating high-performance deep-UV photovoltaic detectors. The method proposed in this paper can provide reference for the preparation of deep-UV photovoltaic detectors with high photoresponsivity and thermal stability in the future.
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Affiliation(s)
- Dan Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou , Guangdong 510275 , China
| | - Wanmin Lin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou , Guangdong 510275 , China
| | - Sixian Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou , Guangdong 510275 , China
| | - Yanming Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou , Guangdong 510275 , China
| | - Richeng Lin
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou , Guangdong 510275 , China
| | - Wei Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou , Guangdong 510275 , China
| | - Feng Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou , Guangdong 510275 , China
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25
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Ju D, Liu X, Zhu Z, Wang S, Liu S, Gu Y, Chang J, Liu Q, Zou Y. Solution processed membrane-based wearable ZnO/graphene Schottky UV photodetectors with imaging application. NANOTECHNOLOGY 2019; 30:375701. [PMID: 31163411 DOI: 10.1088/1361-6528/ab26ed] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Flexible and wearable electrical devices have attracted extensive research attention in recent years. In the device fabrication process, the low-cost and compatibility with industrialized mass production are of great importance. Herein, membrane-based flexible photodetectors (PDs) based on Polyvinylidene Fluoride filter membrane with the structure of Ag nanowires (NWs)/ZnO NWs/graphene were fabricated by a full-solution method. The built-in electric field due to the ZnO/graphene Schottky junction is in favor of the separation and transport of photo-generated carriers, leading to enhanced device performance. The I light/I dark ratio was as high as ∼102, which is far superior to that of the reported ZnO-based fiber-shaped PDs. The PDs with remarkable flexibility can be easily attached to the human body and even can work steadily under serious bending conditions. Particularly, the photocurrent can keep 95% of the maximum value after the PD was bent 1000 times. In addition to the wearable applications, the membrane-based PD arrays can also be applied for imaging application.
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Affiliation(s)
- Dan Ju
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, Institute of Optoelectronics & Nanomaterials, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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26
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Zhang Z, Lin P, Liao Q, Kang Z, Si H, Zhang Y. Graphene-Based Mixed-Dimensional van der Waals Heterostructures for Advanced Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806411. [PMID: 31503377 DOI: 10.1002/adma.201806411] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2018] [Revised: 04/20/2019] [Indexed: 05/07/2023]
Abstract
Although the library of 2D atomic crystals has greatly expanded over the past years, research into graphene is still one of the focuses for both academia and business communities. Due to its unique electronic structure, graphene offers a powerful platform for exploration of novel 2D physics, and has significantly impacted a wide range of fields including energy, electronics, and photonics. Moreover, the versatility of combining graphene with other functional components provides a powerful strategy to design artificial van der Waals (vdWs) heterostructures. Aside from the stacked 2D-2D vdWs heterostructure, in a broad sense graphene can hybridize with other non-2D materials through vdWs interactions. Such mixed-dimensional vdWs (MDWs) structures allow considerable freedom in material selection and help to harness the synergistic advantage of different dimensionalities, which may compensate for graphene's intrinsic shortcomings. A succinct overview of representative advances in graphene-based MDWs heterostructures is presented, ranging from assembly strategies to applications in optoelectronics. The scientific merit and application advantages of these hybrid structures are particularly emphasized. Moreover, considering possible breakthroughs in new physics and application potential on an industrial scale, the challenges and future prospects in this active research field are highlighted.
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Affiliation(s)
- Zheng Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Pei Lin
- Department of Physics and Engineering, Zheng Zhou University, Zhengzhou, Henan, 450001, P. R. China
| | - Qingliang Liao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Haonan Si
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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Investigation of ZnO-decorated CNTs for UV Light Detection Applications. NANOMATERIALS 2019; 9:nano9081099. [PMID: 31370341 PMCID: PMC6722801 DOI: 10.3390/nano9081099] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2019] [Revised: 07/18/2019] [Accepted: 07/29/2019] [Indexed: 12/01/2022]
Abstract
Multi-walled carbon nanotubes (CNTs) decorated with zinc oxide nanoparticles (ZnO NPs) were prepared in isopropanol solution by a simple, room-temperature process and characterized from structural, morphological, electronic, and optical points of view. A strong interaction between ZnO and CNTs is fully confirmed by all the characterization techniques. ZnO-CNTs nanocomposites, with different weight ratios, were deposited as a dense layer between two electrodes, in order to investigate the electrical behaviour. In particular, the electrical response of the nanocomposite layers to UV light irradiation was recorded for a fixed voltage: As the device is exposed to the UV lamp, a sharp current drop takes place and then an increase is observed as the irradiation is stopped. The effect can be explained by adsorption and desorption phenomena taking place on the ZnO nanoparticle surface under irradiation and by charge transfer between ZnO and CNTs, thanks to the strong interaction between the two nanomaterials. The nanocomposite material shows good sensitivity and fast response to UV irradiation. Room temperature and low-cost processes used for the device preparation combined with room temperature and low voltage operational conditions make this methodology very promising for large scale UV detectors applications.
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Deka Boruah B. Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors. NANOSCALE ADVANCES 2019; 1:2059-2085. [PMID: 36131964 PMCID: PMC9416854 DOI: 10.1039/c9na00130a] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2019] [Accepted: 03/28/2019] [Indexed: 05/14/2023]
Abstract
Currently, the development of ultraviolet (UV) photodetectors (PDs) has attracted the attention of the research community because of the vast range of applications of photodetectors in modern society. A variety of wide-band gap nanomaterials have been utilized for UV detection to achieve higher photosensitivity. Specifically, zinc oxide (ZnO) nanomaterials have attracted significant attention primarily due to their additional properties such as piezo-phototronic and pyro-phototronic effects, which allow the fabrication of high-performance and low power consumption-based UV PDs. This article primarily focuses on the recent development of ZnO nanostructure-based UV PDs ranging from nanomaterials to architectural device design. A brief overview of the photoresponse characteristics of UV PDs and potential ZnO nanostructures is presented. Moreover, the recent development in self-powered PDs and implementation of the piezo-phototronic effect, plasmonic effect and pyro-phototronic effect for performance enhancement is highlighted. Finally, the research perspectives and future research direction related to ZnO nanostructures for next-generation UV PDs are summarized.
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Affiliation(s)
- Buddha Deka Boruah
- Institute for Manufacturing, Department of Engineering, University of Cambridge UK CB3 0FS
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29
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Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity. NANOMATERIALS 2019; 9:nano9050799. [PMID: 31137675 PMCID: PMC6566797 DOI: 10.3390/nano9050799] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/19/2019] [Revised: 05/10/2019] [Accepted: 05/18/2019] [Indexed: 11/17/2022]
Abstract
The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO2/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.61 eV and an ideality factor of 1.16. Under UV illumination, the device exhibited the excellent photoresponse characteristics in both forward and reverse bias regions. When illuminating UV light with the optical power density of 0.62 mW/cm2, the device revealed a high on/off current ratio of >103 even at a low bias voltage of 0.1 V. For the transient characteristics upon switching of UV light pulses, the device represented a fast and stable photoresponse (i.e., rise time: 0.16 s, decay time: 0.19 s). From the temperature-dependent current–voltage characteristics, such an outstanding photoresponse characteristic was found to arise from the enhanced Schottky barrier homogeneity via the thermal treatment of the graphene surface. The results suggest that the ZnO/graphene Schottky diode holds promise for the application in high-performance low-power UV photodetectors.
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30
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Fukushima S, Shimatani M, Okuda S, Ogawa S, Kanai Y, Ono T, Inoue K, Matsumoto K. Low dark current and high-responsivity graphene mid-infrared photodetectors using amplification of injected photo-carriers by photo-gating. OPTICS LETTERS 2019; 44:2598-2601. [PMID: 31090741 DOI: 10.1364/ol.44.002598] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2019] [Accepted: 04/23/2019] [Indexed: 06/09/2023]
Abstract
Low dark current, high-responsivity middle-wavelength infrared (IR) graphene photodetectors using photo-gating amplification of injected photo-carriers are demonstrated. A graphene/p-indium antimonide (InSb) heterojunction and graphene/insulator region were formed. The injected photo-carriers from InSb to graphene were amplified by photo-gating induced in the graphene/tetraethyl orthosilicate (TEOS) region, resulting in the high responsivity and low dark current performance. A responsivity of 14.9 A/W and an ON/OFF ratio of 2.66×104 were achieved. The photoresponse is shown to be determined by the cross-sectional area between the graphene and the TEOS-SiO2, in which the injected photo-carriers into graphene were modulated and amplified by the photo-gating effect. Our results indicate that high-performance IR photodetectors based on the developed graphene photodetectors can be realized.
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31
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Sang M, Shin J, Kim K, Yu KJ. Electronic and Thermal Properties of Graphene and Recent Advances in Graphene Based Electronics Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E374. [PMID: 30841599 PMCID: PMC6474003 DOI: 10.3390/nano9030374] [Citation(s) in RCA: 80] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2019] [Revised: 02/19/2019] [Accepted: 02/21/2019] [Indexed: 12/18/2022]
Abstract
Recently, graphene has been extensively researched in fundamental science and engineering fields and has been developed for various electronic applications in emerging technologies owing to its outstanding material properties, including superior electronic, thermal, optical and mechanical properties. Thus, graphene has enabled substantial progress in the development of the current electronic systems. Here, we introduce the most important electronic and thermal properties of graphene, including its high conductivity, quantum Hall effect, Dirac fermions, high Seebeck coefficient and thermoelectric effects. We also present up-to-date graphene-based applications: optical devices, electronic and thermal sensors, and energy management systems. These applications pave the way for advanced biomedical engineering, reliable human therapy, and environmental protection. In this review, we show that the development of graphene suggests substantial improvements in current electronic technologies and applications in healthcare systems.
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Affiliation(s)
- Mingyu Sang
- School of Electrical & Electronic Engineering, Yonsei University, Seoul 03722, Korea.
| | - Jongwoon Shin
- School of Electrical & Electronic Engineering, Yonsei University, Seoul 03722, Korea.
| | - Kiho Kim
- School of Electrical & Electronic Engineering, Yonsei University, Seoul 03722, Korea.
| | - Ki Jun Yu
- School of Electrical & Electronic Engineering, Yonsei University, Seoul 03722, Korea.
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32
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Maurya MR, Toutam V. Fast response UV detection based on waveguide characteristics of vertically grown ZnO nanorods partially embedded in anodic alumina template. NANOTECHNOLOGY 2019; 30:085704. [PMID: 30592259 DOI: 10.1088/1361-6528/aaf545] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Zinc oxide (ZnO)-based ultraviolet (UV) detector has been fabricated and its photoresponse is studied in an out-of-plane contact configuration. Porous anodic aluminum oxide (AAO) template-based deposition method is adopted for the aligned and well-separated growth of ZnO nanorods (NRs). Through-hole in silicon (Si) by modified metal assisted chemical etching is used as a window for the electrochemical deposition of ZnO in the template and for out-of-plane electrical contacts during device analysis. The fabricated photodetector shows a fast response under UV (365 nm) light illumination, with rise and decay times of 31 ± 2 ms and 85 ± 3 ms, respectively. This fast response is analysed in terms of vertical growth and the waveguide nature of ZnO NRs embedded in anodic alumina. These results are further supported by a simulation comparing the electric field distribution of ZnO NR embedded in AAO with that of bare ZnO NR.
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Affiliation(s)
- Muni Raj Maurya
- Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India. Electrical & Electronics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India
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33
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Yuan Y, Han Y, Huang B, Zhang L, Yang H, Gu B, Cui Y, Zhang J. Single-channel UV/vis dual-band detection with ZnCdS:Mn/ZnS core/shell quantum dots. NANOTECHNOLOGY 2019; 30:075501. [PMID: 30523831 DOI: 10.1088/1361-6528/aaf3e0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In the ultraviolet detection system, the Si-based photodetector could be sensitised with different kinds of fluorescent material to enhance its response in the short-wavelength range. Thick-shell ZnCdS:Mn/ZnS core/shell quantum dots (QDs) exhibit unique advantages in UV signal sensitisation due to their long PL lifetime, as well as stable emission matched with CCD's response. Herein, a single-channel UV panoramic detection system based on these Mn-doped QDs has been proposed. The QDs@PMMA film was attached on a Si-based CCD camera versus a tapered fibre, and an optical chopper was mounted before the QDs@PMMA film. The long lifetime fluorescence originating from UV signal could be still collected by the CCD camera when the chopper is in the 'off' state, hence the UV/vis signal ratio is significantly enhanced.
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Affiliation(s)
- Yufen Yuan
- Advanced Photonics Centre, Southeast University, Nanjing 210096, Jiangsu, People's Republic of China
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34
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Xie Y, Li H, Zhang D, Wang Q, Zhang L. High performance blue light detector based on ZnO nanowire arrays. APPLIED OPTICS 2019; 58:1242-1245. [PMID: 30873993 DOI: 10.1364/ao.58.001242] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2018] [Accepted: 12/14/2018] [Indexed: 06/09/2023]
Abstract
Organic-inorganic hybrid heterojunctions are ever so promising for low-cost and high-efficient photoelectric devices. We report a p-n junction diode composed of inorganic ZnO nanowire arrays (ZNAs) and organic 2, 2', 7, 7'-tetrakis-(N, N-di-p-methoxyphenylamine)- 9, 9'-spirobifluorene (spiro-MeOTAD). A maximum photoresponsivity of 1.32 mA/W is observed under illumination at zero bias. We also demonstrate that the photocurrent time response is observed to be rapid, consistent, as well as repeatable. On blue light weak irradiance (410 nm, 75 μW/cm2), the rise time constant and decay time constant were found to be 0.12 and 0.06 s, respectively. These results suggest ZNAs/spiro-MeOTAD heterojunction as a candidate for an efficient self-powered blue light detector.
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35
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Wang L, He SJ, Wang KY, Luo HH, Hu JG, Yu YQ, Xie C, Wu CY, Luo LB. Dual-plasmonic Au/graphene/Au-enhanced ultrafast, broadband, self-driven silicon Schottky photodetector. NANOTECHNOLOGY 2018; 29:505203. [PMID: 30240364 DOI: 10.1088/1361-6528/aae360] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High-performance photodetectors are desirable for various applications, including multi-wavelength image sensing, communication, and safety monitoring. In this study, we report the construction of a dual-surface plasmon-enhanced silicon Schottky photodetector using Au nanoparticles (NPs)/graphene/Au NPs hybrid structure as the electrode. It was found that the as-assembled device exhibited broad sensitivity, ranging from ultraviolet to near-infrared light (360-1330 nm) at room temperature, with a high response speed of 360 ns and a 3 dB bandwidth of 780 kHz at zero bias. Further theoretical simulation based on the finite-element method revealed that good device performance is associated with the contribution of the Au NPs/graphene/Au NPs electrode: intense dual-plasmonic resonance coupling is induced in a hybrid structure of two layers of metallic NPs separated by a uniform monolayer graphene. It not only can enhance light trapping and the localized electric field at the resonant and off-resonant wavelength regions, but is also beneficial for the tunneling of hot electrons. This work demonstrated the great potential of dual-plasmonic resonance coupling in optoelectronic devices and will lead to the development of advanced plasmonic devices.
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Affiliation(s)
- Li Wang
- School of Electronic Sciences and Applied Physics and Anhui Provincial Key Laboratory of Advanced Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
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36
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Kim H, Kim W, Park J, Lim N, Lee R, Cho SJ, Kumaresan Y, Oh MK, Jung GY. Surface conversion of ZnO nanorods to ZIF-8 to suppress surface defects for a visible-blind UV photodetector. NANOSCALE 2018; 10:21168-21177. [PMID: 30411778 DOI: 10.1039/c8nr06701e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
ZnO nanomaterials are promising building blocks for an efficient UV photodetector; however, their slow sensing behavior and undesired response to visible light, which are attributed to surface defects, such as oxygen or zinc vacancies, are challenges that remain to be addressed. Here, we transformed the ZnO nanorod surface into a zeolitic imidazolate framework-8 (ZIF-8) to eliminate ZnO surface defects. Vertical-type photodetectors were fabricated incorporating a Schottky junction at the ZIF-8/gold (Au) top electrode and could respond to UV light with a rapid response and recovery (1-2 s) and demonstrated a UV-to-visible rejection ratio in the order of 103, qualifying them as efficient visible-blind UV photodetectors. It is noteworthy that the ZIF-8 layer effectively separated the photogenerated electron-hole pairs, and thus reduced their recombination probability. The enhanced photodetector displayed excellent figures-of-merit: a responsivity of 291 A W-1 and a detectivity of 5.9 × 1013 cm Hz1/2 W-1 under illumination at 295 nm.
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Affiliation(s)
- Hyeonghun Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
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37
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Xie C, Zeng L, Zhang Z, Tsang YH, Luo L, Lee JH. High-performance broadband heterojunction photodetectors based on multilayered PtSe 2 directly grown on a Si substrate. NANOSCALE 2018; 10:15285-15293. [PMID: 30067253 DOI: 10.1039/c8nr04004d] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional group-10 transition metal dichalcogenides have recently attracted increasing research interest because of their unique electronic and optoelectronic properties. Herein, we present vertical hybrid heterojunctions of multilayered PtSe2 and Si, which take advantage of large-scale homogeneous PtSe2 films grown directly on Si substrates. These heterojunctions show obvious rectifying behavior and a pronounced photovoltaic effect, enabling them to function as self-driven photodetectors operating at zero bias. The photodetectors can operate in both photovoltage and photocurrent modes, with responsivity values as high as 5.26 × 106 V W-1 and 520 mA W-1 at 808 nm, respectively. The Ilight/Idark ratio, specific detectivity, and response speed are 1.5 × 105, 3.26 × 1013 Jones, and 55.3/170.5 μs, respectively. Furthermore, the heterojunctions are highly sensitive in a broad spectral region ranging from deep ultraviolet to near-infrared (NIR) (200-1550 nm). Because of the strong NIR light absorption of PtSe2, the heterojunctions exhibit photocurrent responsivities of 33.25 and 0.57 mA W-1 at telecommunication wavelengths of 1310 and 1550 nm, respectively. Considering the excellent performance of the PtSe2/Si heterojunctions, they are highly suitable for application in high-performance broadband photodetectors. The generality of the above results also signifies that the proposed in situ synthesis method has great potential for future large-scale optoelectronic device integration.
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Affiliation(s)
- Chao Xie
- School of Electronic Science and Applied Physics and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
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Sarkar S, Das Mahapatra A, Basak D. Self-powered highly enhanced broad wavelength (UV to visible) photoresponse of ZnO@ZnO1−xSx@ZnS core–shell heterostructures. J Colloid Interface Sci 2018; 523:245-253. [PMID: 29626762 DOI: 10.1016/j.jcis.2018.03.110] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2018] [Revised: 03/29/2018] [Accepted: 03/30/2018] [Indexed: 11/16/2022]
Affiliation(s)
- Sanjit Sarkar
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Ayon Das Mahapatra
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Durga Basak
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India.
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Graphene-Based Semiconductor Heterostructures for Photodetectors. MICROMACHINES 2018; 9:mi9070350. [PMID: 30424283 PMCID: PMC6082276 DOI: 10.3390/mi9070350] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2018] [Revised: 07/09/2018] [Accepted: 07/11/2018] [Indexed: 12/30/2022]
Abstract
Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed.
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40
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Li X, Tan Q, Feng X, Wang Q, Liu Y. Wavelength-Controlled Photodetector Based on Single CdSSe Nanobelt. NANOSCALE RESEARCH LETTERS 2018; 13:171. [PMID: 29881900 PMCID: PMC5991109 DOI: 10.1186/s11671-018-2590-6] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2018] [Accepted: 05/30/2018] [Indexed: 06/08/2023]
Abstract
CdSSe nanobelts (NBs) are synthesized by thermal evaporation and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and cathodoluminescence (CL). It is found that the CdSSe NBs have a good morphology and microstructure without defects. CL is sensitive to the defects of CdSSe NBs; thus, we can select single nanobelt with homogeneous CL emission to prepare a detector. Based on it, the photodetector of single CdSSe NB was developed and its photoelectric properties were investigated in detail. It is found that under illumination of white light and at the bias voltage of 1 V, the photocurrent of a single CdSSe nanobelt device is 1.60 × 10-7 A, the dark current is 1.96 × 10-10 A, and the ratio of light current to dark one is 816. In addition, the CdSSe nanobelt detector has high photoelectric performance with spectral responsivity of 10.4 AW-1 and external quantum efficiency (EQE) of 19.1%. Its rise/decay time is about 1.62/4.70 ms. This work offers a novel strategy for design wavelength-controlled photodetectors by adjusting their compositions.
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Affiliation(s)
- Xinmin Li
- Institute of Physics and Electronic Information, Yunnan Normal University, Kunming, 650500 People’s Republic of China
- Key Laboratory of Yunnan Higher Education Institutes for Optoelectric Information Technology, Kunming, 650500 People’s Republic of China
| | - Qiuhong Tan
- Institute of Physics and Electronic Information, Yunnan Normal University, Kunming, 650500 People’s Republic of China
- Yunnan Key Laboratory of Opto-electronic Information Technology, Kunming, 650500 People’s Republic of China
- Key Laboratory of Yunnan Higher Education Institutes for Optoelectric Information Technology, Kunming, 650500 People’s Republic of China
| | - Xiaobo Feng
- Institute of Physics and Electronic Information, Yunnan Normal University, Kunming, 650500 People’s Republic of China
- Yunnan Key Laboratory of Opto-electronic Information Technology, Kunming, 650500 People’s Republic of China
- Key Laboratory of Yunnan Higher Education Institutes for Optoelectric Information Technology, Kunming, 650500 People’s Republic of China
| | - Qianjin Wang
- Institute of Physics and Electronic Information, Yunnan Normal University, Kunming, 650500 People’s Republic of China
- Yunnan Key Laboratory of Opto-electronic Information Technology, Kunming, 650500 People’s Republic of China
- Key Laboratory of Yunnan Higher Education Institutes for Optoelectric Information Technology, Kunming, 650500 People’s Republic of China
| | - Yingkai Liu
- Institute of Physics and Electronic Information, Yunnan Normal University, Kunming, 650500 People’s Republic of China
- Yunnan Key Laboratory of Opto-electronic Information Technology, Kunming, 650500 People’s Republic of China
- Key Laboratory of Yunnan Higher Education Institutes for Optoelectric Information Technology, Kunming, 650500 People’s Republic of China
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Bao H, Zhang H, Zhou L, Fu H, Liu G, Li Y, Cai W. Large Area α-Cu 2S Particle-Stacked Nanorod Arrays by Laser Ablation in Liquid and Their Strong Structurally Enhanced and Stable Visible Photoelectric Performances. ACS APPLIED MATERIALS & INTERFACES 2018; 10:19027-19036. [PMID: 29767499 DOI: 10.1021/acsami.8b03520] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A flexible route is developed for fabrication of large area α-Cu2S nanorod arrays (NRAs) on the basis of one-step laser ablation of a copper foil in CS2 liquid. It has been demonstrated that the obtained products are the high-temperature phase α-Cu2S and consist of the nanorods vertically standing on the Cu foil, exhibiting the array. The nanorods were about 1 μm in length and around 100 nm in thickness and built by stacking the nearly spherical and ⟨110⟩-oriented nanoparticles (NPs) up. Such array can be peeled off from the foil and remain freestanding. Further, it has been found that the ablation duration, the laser power, and the foil surface state are crucial to the formation of the Cu2S NRA. The formation of such oriented NP-stacked Cu2S NRAs is attributed to the laser-induced generation of α-Cu2S NPs and the NPs' deposition/oriented connection growth on the surface-vulcanized copper foil. Importantly, the visible photocurrent response of the α-Cu2S NRAs is 8 times higher than that of the Cu2S NPs' film with the equivalent thickness and also larger than that of previously reported Cu2S, showing significantly enhanced photoelectric performances. As an application, such NRAs have exhibited markedly enhanced visible photocatalytic activity and highly stable recycling performances, compared with the α-Cu2S NPs. Further studies have revealed that the enhanced performances are attributed to the structurally enhanced light trapping effect of the NRAs as well as short and smooth carrier diffusion path in the oriented NP-stacked nanorods. This work provides a new and simple method for fabrication of the large area Cu2S NRAs with high and stable photoelectric performances.
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Affiliation(s)
- Haoming Bao
- Key Lab of Materials Physics, Anhui Key Lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , P. R. China
- University of Science and Technology of China , Hefei 230026 , P. R. China
| | - Hongwen Zhang
- Key Lab of Materials Physics, Anhui Key Lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , P. R. China
| | - Le Zhou
- Key Lab of Materials Physics, Anhui Key Lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , P. R. China
- University of Science and Technology of China , Hefei 230026 , P. R. China
| | - Hao Fu
- Key Lab of Materials Physics, Anhui Key Lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , P. R. China
- University of Science and Technology of China , Hefei 230026 , P. R. China
| | - Guangqiang Liu
- Key Lab of Materials Physics, Anhui Key Lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , P. R. China
| | - Yue Li
- Key Lab of Materials Physics, Anhui Key Lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , P. R. China
| | - Weiping Cai
- Key Lab of Materials Physics, Anhui Key Lab of Nanomaterials and Nanotechnology, Institute of Solid State Physics , Chinese Academy of Sciences , Hefei 230031 , P. R. China
- University of Science and Technology of China , Hefei 230026 , P. R. China
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Liu X, Kuang W, Ni H, Tao Z, Huang Q, Chen J, Liu Q, Chang J, Lei W. A highly sensitive and fast graphene nanoribbon/CsPbBr 3 quantum dot phototransistor with enhanced vertical metal oxide heterostructures. NANOSCALE 2018; 10:10182-10189. [PMID: 29786723 DOI: 10.1039/c8nr02384k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Although recent breakthroughs in reported graphene-based phototransistors with embedded quantum dots (QDs) have definitely been astonishing, there are still some obstacles in their practical use with regard to their electrical and optical performances. We show that through optimization of the vertical graphene nanoribbon (GNR)/QD/IGZO heterostructure and the ultrahigh efficiency of CsPbBr3 QDs, it is possible to significantly increase the on/off ratio (>103), the subthreshold slope (S.S., 0.9 V dec-1), the device's field effect mobility (μFET, 13 cm-1 V-1 S-1) and other electrical properties. Subsequently, on the basis of the extra optical-electrical characterization, we attribute the enhanced photosensitivity (800), the accelerated detecting speed (141 μs) and the high detectivity (7.5 × 1014 cm Hz1/2 W-1) to the vertical heterostructure associated with the optimized GNR component. To further demonstrate this enhancement phenomenon, the mechanism and theory mode of this vertical heterostructure are analyzed and exploited in this letter. This research indicates that a highly sensitive and fast phototransistor can be realized using the novel GNR/QD/IGZO vertical heterostructure and the long diffusion length of the perovskite QD photosensing component.
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Affiliation(s)
- Xiang Liu
- School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing, China.
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43
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One-Dimensional Zinc Oxide Nanomaterials for Application in High-Performance Advanced Optoelectronic Devices. CRYSTALS 2018. [DOI: 10.3390/cryst8050223] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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44
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Luo Y, Yan X, Zhang J, Li B, Wu Y, Lu Q, Jin C, Zhang X, Ren X. A graphene/single GaAs nanowire Schottky junction photovoltaic device. NANOSCALE 2018; 10:9212-9217. [PMID: 29726561 DOI: 10.1039/c8nr00158h] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.
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Affiliation(s)
- Yanbin Luo
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
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45
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Liu Y, Cai H, Wang F, Wang J, Huang Q, Fu Z, Lu Y. Graphene on {116} faceted monocrystalline anatase nanosheet array for ultraviolet detection. NANOSCALE 2018; 10:3606-3612. [PMID: 29340391 DOI: 10.1039/c7nr08037a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A structure composed of a nanosheet array may trap photons, which could be used to enhance the optical response via resonances; this may be highly useful in ultraviolet (UV) detection, photocatalysis, solar cells, etc. Moreover, anatase nanosheets exposed with the active {001}, {111}, and {116} facets are promising in applications such as Li-ion battery, photocatalysis, and electrochemistry. Therefore, in this study, the {116} faceted single-crystalline anatase nanosheet array with the sheet spacing in the range of several hundred nanometers was directly grown on the transparent conductive substrates. A photo-detector was fabricated by transferring a graphene electrode to the top of the anatase nanosheet array. The resultant device is inactive to visible-light irradiation and instantly responds to the UV light, which is due to the unique UV absorption property of the anatase nanosheet array and the advantage of the Schottky junction between the interfaces of graphene and anatase. The energy barrier between the two materials is 0.122 eV. We have provided a thorough research on graphene/monocrystal anatase-NSs.
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Affiliation(s)
- Yu Liu
- CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China (USTC), Hefei 230026, P. R. China
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46
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Bansal S, Sharma K, Jain P, Sardana N, Kumar S, Gupta N, Singh AK. Bilayer graphene/HgCdTe based very long infrared photodetector with superior external quantum efficiency, responsivity, and detectivity. RSC Adv 2018; 8:39579-39592. [PMID: 35558011 PMCID: PMC9090716 DOI: 10.1039/c8ra07683a] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2018] [Accepted: 11/13/2018] [Indexed: 11/23/2022] Open
Abstract
We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride (Hg1−xCdx=0.1867Te) heterojunction based very long wavelength infrared (VLWIR) conductive photodetector. The unique absorption properties of graphene enable a long carrier lifetime of charge carriers contributing to the carrier-multiplication due to impact ionization and, hence, large photocurrent and high quantum efficiency. The proposed p+-BLG/n-Hg0.8133Cd0.1867Te photodetector is characterized and analyzed in terms of different electrical and optical characteristic parameters using computer simulations. The obtained results are further validated by developing an analytical model based on drift-diffusion, tunneling and Chu's methods. The photodetector has demonstrated a superior performance including improved dark current density (∼1.75 × 10−14 µA cm−2), photocurrent density (∼8.33 µA cm−2), internal quantum efficiency (QEint ∼ 99.49%), external quantum efficiency (QEext ∼ 89%), internal photocurrent responsivity (∼13.26 A W−1), external photocurrent responsivity (∼9.1 A W−1), noise equivalent power (∼8.3 × 10−18 W), total noise current (∼1.06 fA), signal to noise ratio (∼156.18 dB), 3 dB cut-off frequency (∼36.16 GHz), and response time of 9.4 ps at 77 K. Furthermore, the effects of different external biasing, light power intensity, and temperature are evaluated, suggesting a high QEext of 3337.70% with a bias of −0.5 V near room temperature. We present a high-performance bilayer graphene (BLG) and mercury cadmium telluride (Hg1−xCdx=0.1867Te) heterojunction based very long wavelength infrared (VLWIR) conductive photodetector.![]()
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Affiliation(s)
- Shonak Bansal
- Department of Electronics and Communication Engineering
- Punjab Engineering College (Deemed to be University)
- Chandigarh-160012
- India
| | - Kuldeep Sharma
- Department of Electronics and Communication Engineering
- Punjab Engineering College (Deemed to be University)
- Chandigarh-160012
- India
| | - Prince Jain
- Department of Electronics and Communication Engineering
- Punjab Engineering College (Deemed to be University)
- Chandigarh-160012
- India
| | - Neha Sardana
- Department of Metallurgical and Materials Engineering
- Indian Institute of Technology
- Ropar
- India
| | - Sanjeev Kumar
- Department of Applied Sciences
- Punjab Engineering College (Deemed to be University)
- Chandigarh-160012
- India
| | - Neena Gupta
- Department of Electronics and Communication Engineering
- Punjab Engineering College (Deemed to be University)
- Chandigarh-160012
- India
| | - Arun K. Singh
- Department of Electronics and Communication Engineering
- Punjab Engineering College (Deemed to be University)
- Chandigarh-160012
- India
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Tang R, Han S, Teng F, Hu K, Zhang Z, Hu M, Fang X. Size-Controlled Graphene Nanodot Arrays/ZnO Hybrids for High-Performance UV Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1700334. [PMID: 29375965 PMCID: PMC5770666 DOI: 10.1002/advs.201700334] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2017] [Revised: 07/29/2017] [Indexed: 05/03/2023]
Abstract
Graphene nanodots (GNDs) are one of the most attractive graphene nanostructures due to their tunable optoelectronic properties. Fabricated by polystyrene-nanosphere lithography, uniformly sized graphene nanodots array (GNDA) is constructed as an ultraviolet photodetector (PD) with ZnO nanofilm spin coated on it. The size of GNDA can be well controlled from 45 to 20 nm varying the etching time. It is revealed in the study that the photoelectric properties of ZnO/GNDA PD are highly GNDA size-dependent. The highest responsivity (R) and external quantum efficiency of ZnO/GNDA (20 nm) PD are 22.55 mA W-1 and 9.32%, almost twofold of that of ZnO PD. Both ZnO/GNDA (20 nm) PD and ZnO/GNDA (30 nm) PD exhibit much faster response speed under on/off switching light and have shorter rise/decay time compared with ZnO PD. However, as the size of GNDA increase to 45 nm, the PD appears poor performance. The size-dependent phenomenon can be explained by the energy band alignments in ZnO/GNDA hybrids. These efforts reveal the enhancement of GNDs on traditional photodetectors with tunable optoelectronic properties and hold great potential to pave a new way to explore the various remarkable photodetection performances by controlling the size of the nanostructures.
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Affiliation(s)
- Ruidie Tang
- Department of Materials ScienceFudan UniversityShanghai200433P. R. China
| | - Sancan Han
- Department of Materials Science and EngineeringUniversity of Shanghai for Science and TechnologyShanghai200093P. R. China
| | - Feng Teng
- Department of Materials ScienceFudan UniversityShanghai200433P. R. China
| | - Kai Hu
- Department of Materials ScienceFudan UniversityShanghai200433P. R. China
| | - Zhiming Zhang
- Department of Materials ScienceFudan UniversityShanghai200433P. R. China
| | - Mingxiang Hu
- Department of Materials ScienceFudan UniversityShanghai200433P. R. China
| | - Xiaosheng Fang
- Department of Materials ScienceFudan UniversityShanghai200433P. R. China
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Roy S, Pramanik S, Bhandari S, Chattopadhyay A. Surface Complexed ZnO Quantum Dot for White Light Emission with Controllable Chromaticity and Color Temperature. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2017; 33:14627-14633. [PMID: 29172550 DOI: 10.1021/acs.langmuir.7b01738] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We report the formation of blue emitting Zn(MSA)2 complex on the surface of a yellow emitting ZnO quantum dot (Qdot)-out of a complexation reaction between N-methylsalicylaldimine (MSA) and ZnO Qdot. This led to formation of a highly luminescent, photostable, single-component nanocomposite that emits bright natural white light, with (i) chromaticities of (0.31, 0.38) and (0.31, 0.36), (ii) color rendering indices (CRI) of 74 and 82, and (iii) correlated color temperatures (CCT) of 6505 and 6517 K in their solution and solid phases, respectively. Importantly, the control over the chromaticity and CCT-depending upon the degree of complexation-makes the reported nanocomposite a potential new advanced material in fabricating cost-effective single-component white light emitting devices (WLED) of choice and design in the near future.
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Affiliation(s)
- Shilaj Roy
- Department of Chemistry and ‡Centre for Nanotechnology, Indian Institute of Technology Guwahati , Guwahati 781039, Assam, India
| | - Sabyasachi Pramanik
- Department of Chemistry and ‡Centre for Nanotechnology, Indian Institute of Technology Guwahati , Guwahati 781039, Assam, India
| | - Satyapriya Bhandari
- Department of Chemistry and ‡Centre for Nanotechnology, Indian Institute of Technology Guwahati , Guwahati 781039, Assam, India
| | - Arun Chattopadhyay
- Department of Chemistry and ‡Centre for Nanotechnology, Indian Institute of Technology Guwahati , Guwahati 781039, Assam, India
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49
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Zhang Q, Xu W, Sun J, Pan Z, Zhao J, Wang X, Zhang J, Man P, Guo J, Zhou Z, He B, Zhang Z, Li Q, Zhang Y, Xu L, Yao Y. Constructing Ultrahigh-Capacity Zinc-Nickel-Cobalt Oxide@Ni(OH) 2 Core-Shell Nanowire Arrays for High-Performance Coaxial Fiber-Shaped Asymmetric Supercapacitors. NANO LETTERS 2017; 17:7552-7560. [PMID: 29111747 DOI: 10.1021/acs.nanolett.7b03507] [Citation(s) in RCA: 78] [Impact Index Per Article: 11.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Increased efforts have recently been devoted to developing high-energy-density flexible supercapacitors for their practical applications in portable and wearable electronics. Although high operating voltages have been achieved in fiber-shaped asymmetric supercapacitors (FASCs), low specific capacitance still restricts the further enhancement of their energy density. This article specifies a facile and cost-effective method to directly grow three-dimensionally well-aligned zinc-nickel-cobalt oxide (ZNCO)@Ni(OH)2 nanowire arrays (NWAs) on a carbon nanotube fiber (CNTF) with an ultrahigh specific capacitance of 2847.5 F/cm3 (10.678 F/cm2) at a current density of 1 mA/cm2, These levels are approximately five times higher than those of ZNCO NWAs/CNTF electrodes (2.10 F/cm2) and four times higher than Ni(OH)2/CNTF electrodes (2.55 F/cm2). Benefiting from their unique features, we successfully fabricated a prototype coaxial FASC (CFASC) with a maximum operating voltage of 1.6 V, which was assembled by adopting ZNCO@Ni(OH)2 NWAs/CNTF as the core electrode and a thin layer of carbon coated vanadium nitride (VN@C) NWAs on a carbon nanotube strip (CNTS) as the outer electrode with KOH poly(vinyl alcohol) (PVA) as the gel electrolyte. A high specific capacitance of 94.67 F/cm3 (573.75 mF/cm2) and an exceptional energy density of 33.66 mWh/cm3 (204.02 μWh/cm2) were achieved for our CFASC device, which represent the highest levels of fiber-shaped supercapacitors to date. More importantly, the fiber-shaped ZnO-based photodetector is powered by the integrated CFASC, and it demonstrates excellent sensitivity in detecting UV light. Thus, this work paves the way to the construction of ultrahigh-capacity electrode materials for next-generation wearable energy-storage devices.
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Affiliation(s)
- Qichong Zhang
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University , Shanghai 200092, PR China
| | - Weiwei Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, PR China
| | - Juan Sun
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
- School of Physical Science and Technology, ShanghaiTech University , Shanghai 200120, PR China
| | - Zhenghui Pan
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Jingxin Zhao
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Xiaona Wang
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Jun Zhang
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Ping Man
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Jiabin Guo
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Zhenyu Zhou
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Bing He
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Zengxing Zhang
- Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University , Shanghai 200092, PR China
| | - Qingwen Li
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
- School of Physical Science and Technology, ShanghaiTech University , Shanghai 200120, PR China
| | - Yuegang Zhang
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
| | - Lai Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , 199 Ren'ai Road, Suzhou, Jiangsu 215123, PR China
| | - Yagang Yao
- Division of Advanced Nanomaterials, Key Laboratory of Nanodevices and Applications, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences , Suzhou 215123, PR China
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Lupan O, Schütt F, Postica V, Smazna D, Mishra YK, Adelung R. Sensing performances of pure and hybridized carbon nanotubes-ZnO nanowire networks: A detailed study. Sci Rep 2017; 7:14715. [PMID: 29116099 PMCID: PMC5677033 DOI: 10.1038/s41598-017-14544-0] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2017] [Accepted: 10/09/2017] [Indexed: 01/16/2023] Open
Abstract
In this work, the influence of carbon nanotube (CNT) hybridization on ultraviolet (UV) and gas sensing properties of individual and networked ZnO nanowires (NWs) is investigated in detail. The CNT concentration was varied to achieve optimal conditions for the hybrid with improved sensing properties. In case of CNT decorated ZnO nanonetworks, the influence of relative humidity (RH) and applied bias voltage on the UV sensing properties was thoroughly studied. By rising the CNT content to about 2.0 wt% (with respect to the entire ZnO network) the UV sensing response is considerably increased from 150 to 7300 (about 50 times). With respect to gas sensing, the ZnO-CNT networks demonstrate an excellent selectivity as well as a high gas response to NH3 vapor. A response of 430 to 50 ppm at room temperature was obtained, with an estimated detection limit of about 0.4 ppm. Based on those results, several devices consisting of individual ZnO NWs covered with CNTs were fabricated using a FIB/SEM system. The highest sensing performance was obtained for the finest NW with diameter (D) of 100 nm, with a response of about 4 to 10 ppm NH3 vapor at room temperature.
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Affiliation(s)
- Oleg Lupan
- Institute for Materials Science, Christian-Albrechts Universität zu Kiel, Kaiser Str. 2, D-24143, Kiel, Germany. .,Department of Microelectronics and Biomedical Engineering, Technical University of Moldova, 168 Stefan cel Mare Av., MD-2004, Chisinau, Republic of Moldova.
| | - Fabian Schütt
- Institute for Materials Science, Christian-Albrechts Universität zu Kiel, Kaiser Str. 2, D-24143, Kiel, Germany
| | - Vasile Postica
- Department of Microelectronics and Biomedical Engineering, Technical University of Moldova, 168 Stefan cel Mare Av., MD-2004, Chisinau, Republic of Moldova
| | - Daria Smazna
- Institute for Materials Science, Christian-Albrechts Universität zu Kiel, Kaiser Str. 2, D-24143, Kiel, Germany
| | - Yogendra Kumar Mishra
- Institute for Materials Science, Christian-Albrechts Universität zu Kiel, Kaiser Str. 2, D-24143, Kiel, Germany.
| | - Rainer Adelung
- Institute for Materials Science, Christian-Albrechts Universität zu Kiel, Kaiser Str. 2, D-24143, Kiel, Germany.
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