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Sha W, Hua Q, Wang J, Cong Z, Cui X, Ji K, Dai X, Wang B, Guo W, Hu W. Enhanced Photoluminescence of Flexible InGaN/GaN Multiple Quantum Wells on Fabric by Piezo-Phototronic Effect. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3000-3007. [PMID: 34990111 DOI: 10.1021/acsami.1c12835] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Fabric-based wearable electronics are showing advantages in emerging applications in wearable devices, Internet of everything, and artificial intelligence. Compared to the one with organic materials, devices based on inorganic semiconductors (e.g., GaN) commonly show advantages of superior characteristics and high stability. Upon the transfer of GaN-based heterogeneous films from their rigid substrates onto flexible/fabric substrates, changes in strain would influence the device performance. Here, we demonstrate the transfer of InGaN/GaN multiple quantum well (MQW) films onto flexible/fabric substrates with an effective lift-off technique. The physical properties of the InGaN/GaN MQWs film are characterized by atomic force microscopy and high-resolution X-ray diffraction, indicating that the transferred film does not suffer from huge damage. Excellent flexible properties are observed in the film transferred on fabric, and the photoluminescence (PL) intensity is enhanced by the piezo-phototronic effect, which shows an increase of about 10% by applying an external strain with increasing the film curvature to 6.25 mm-1. Moreover, energy band diagrams of the GaN/InGaN/GaN heterojunction at different strains are illustrated to clarify the internal modulation mechanism by the piezo-phototronic effect. This work would facilitate the guidance of constructing high-performance devices on fabrics and also push forward the rapid development of flexible and wearable electronics.
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Affiliation(s)
- Wei Sha
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Qilin Hua
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jiangwen Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zifeng Cong
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xiao Cui
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Keyu Ji
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, P. R. China
| | - Xinhuan Dai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Bingjun Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, P. R. China
| | - Wenbin Guo
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Weiguo Hu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, Guangxi, P. R. China
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Dai B, Biesold GM, Zhang M, Zou H, Ding Y, Wang ZL, Lin Z. Piezo-phototronic effect on photocatalysis, solar cells, photodetectors and light-emitting diodes. Chem Soc Rev 2021; 50:13646-13691. [PMID: 34821246 DOI: 10.1039/d1cs00506e] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The piezo-phototronic effect (a coupling effect of piezoelectric, photoexcitation and semiconducting properties, coined in 2010) has been demonstrated to be an ingenious and robust strategy to manipulate optoelectronic processes by tuning the energy band structure and photoinduced carrier behavior. The piezo-phototronic effect exhibits great potential in improving the quantum yield efficiencies of optoelectronic materials and devices and thus could help increase the energy conversion efficiency, thus alleviating the energy shortage crisis. In this review, the fundamental principles and challenges of representative optoelectronic materials and devices are presented, including photocatalysts (converting solar energy into chemical energy), solar cells (generating electricity directly under light illumination), photodetectors (converting light into electrical signals) and light-emitting diodes (LEDs, converting electric current into emitted light signals). Importantly, the mechanisms of how the piezo-phototronic effect controls the optoelectronic processes and the recent progress and applications in the above-mentioned materials and devices are highlighted and summarized. Only photocatalysts, solar cells, photodetectors, and LEDs that display piezo-phototronic behavior are reviewed. Material and structural design, property characterization, theoretical simulation calculations, and mechanism analysis are then examined as strategies to further enhance the quantum yield efficiency of optoelectronic devices via the piezo-phototronic effect. This comprehensive overview will guide future fundamental and applied studies that capitalize on the piezo-phototronic effect for energy conversion and storage.
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Affiliation(s)
- Baoying Dai
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Haiyang Zou
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Yong Ding
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
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Zhang J, Zhou M, Wu D, Bian L, Zhao Y, Qin H, Yang W, Wu Y, Xing Z, Lu S. Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy. RSC Adv 2021; 11:15632-15638. [PMID: 35481156 PMCID: PMC9029541 DOI: 10.1039/d1ra02439f] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Accepted: 04/12/2021] [Indexed: 11/21/2022] Open
Abstract
Due to the wide applications of blue and red photodetectors, dual-wavelength (blue/red) photodetectors are promising for future markets. In this work, a dual-wavelength photodetector based on vertical (In,Ga)N nanowires and graphene has been fabricated successfully. By using the transparent graphene, both blue and red responses can be clearly detected. The rise time of response can reach 3.5 ms. Furthermore, the underlying mechanism of double responses has also been analyzed. The main reason contributing to the dual-wavelength response could be the different diameters of nanowires, leading to different In components within (In,Ga)N sections.
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Affiliation(s)
- Jianya Zhang
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China .,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 230026 Hefei China
| | - Min Zhou
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China .,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 230026 Hefei China
| | - Dongmin Wu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China .,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 230026 Hefei China
| | - Lifeng Bian
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China .,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 230026 Hefei China
| | - Yukun Zhao
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China
| | - Hua Qin
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China .,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 230026 Hefei China
| | - Wenxian Yang
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China
| | - Yuanyuan Wu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China
| | - Zhiwei Xing
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China .,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 230026 Hefei China
| | - Shulong Lu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS) 215123 Suzhou China .,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 230026 Hefei China
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Shen TL, Chen CT, Liao YK, Su TY, Liu CY, Lee WY, Chueh YL, Chang TC, Kuo HC, Chen YF. Seeing pressure in color based on integration of highly sensitive pressure sensor and emission tunable light emitting diode. OPTICS EXPRESS 2019; 27:35448-35467. [PMID: 31878716 DOI: 10.1364/oe.27.035448] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2019] [Accepted: 10/15/2019] [Indexed: 06/10/2023]
Abstract
We demonstrate a highly sensitive, low-cost, environmental-friendly pressure sensor derived from a wool-based pressure sensor with wide pressure sensing range using wool bricks embedded with a Ag nano-wires. The easy fabrication and light weight allow portable and wearable device applications. Wth the integration of a light-emitting diode possessing multi-wavelength emission, we illustrate a hybrid multi-functional LED-integrated pressure sensor that is able to convert different applied pressures to light emission with different wavelengths. Due to the high sensitivity of the pressure sensor, the demonstration of acoustic signal detection has also been presented using sound of a metronome and a speaker playing a song. This multi-functional pressure sensor can be implemented to technologies such as smart lighting, health care, visible light communication (VLC), and other internet of things (IoT) applications.
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Shkir M, Khan MT, Ashraf IM, Almohammedi A, Dieguez E, AlFaify S. High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals. Sci Rep 2019; 9:12436. [PMID: 31455774 PMCID: PMC6711974 DOI: 10.1038/s41598-019-48621-3] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2019] [Accepted: 08/08/2019] [Indexed: 11/23/2022] Open
Abstract
Herein, the optoelectrical investigation of cadmium zinc telluride (CZT) and indium (In) doped CZT (InCZT) single crystals-based photodetectors have been demonstrated. The grown crystals were configured into photodetector devices and recorded the current-voltage (I-V) and current-time (I-t) characteristics under different illumination intensities. It has been observed that the photocurrent generation mechanism in both photodetector devices is dominantly driven by a photogating effect. The CZT photodetector exhibits stable and reversible device performances to 632 nm light, including a promotable responsivity of 0.38 AW-1, a high photoswitch ratio of 152, specific detectivity of 6.30 × 1011 Jones, and fast switching time (rise time of 210 ms and decay time of 150 ms). When doped with In, the responsivity of device increases to 0.50 AW-1, photoswitch ratio decrease to 10, specific detectivity decrease to 1.80 × 1011 Jones, rise time decrease to 140 ms and decay time increase to 200 ms. Moreover, these devices show a very high external quantum efficiency of 200% for CZT and 250% for InCZT. These results demonstrate that the CZT based crystals have great potential for visible light photodetector applications.
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Affiliation(s)
- Mohd Shkir
- Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia
| | - Mohd Taukeer Khan
- Department of Physics, Faculty of Science, Islamic University of Madinah, Madinah, 42351, Saudi Arabia
| | - I M Ashraf
- Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia
- Department of Physics, Faculty of Science, Aswan University, Aswan, 81511, Egypt
| | - Abdullah Almohammedi
- Department of Physics, Faculty of Science, Islamic University of Madinah, Madinah, 42351, Saudi Arabia
| | - E Dieguez
- Crystal Growth Lab, Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid, 28049, Spain
| | - S AlFaify
- Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, College of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia.
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Pan C, Zhai J, Wang ZL. Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires. Chem Rev 2019; 119:9303-9359. [PMID: 31364835 DOI: 10.1021/acs.chemrev.8b00599] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.
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Affiliation(s)
- Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.,School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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7
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Xue D, Ruan C, Zhang Y, Chen H, Chen X, Wu C, Zheng C, Chen H, Yu WW. Enhanced bandwidth of white light communication using nanomaterial phosphors. NANOTECHNOLOGY 2018; 29:455708. [PMID: 30160240 PMCID: PMC6281397 DOI: 10.1088/1361-6528/aaddc0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The bandwidth of white light emitting diodes (WLEDs) is an important factor that affects most of the system performances in visible light communication (VLC). It is mainly limited by the down-conversion phosphors. We propose in this paper to employ nanomaterial phosphors with short fluorescence lifetime and high quantum yield in VLC. The white-emitting device of bandwidth-based lifetime was fabricated by using several kinds of nanophosphors with different fluorescence lifetimes. Moreover, we proposed two theoretical models to analyze the factors that affect bandwidth. Compared with the commercial YAG-based WLEDs, the bandwidth of nanophosphor-based WLEDs can be improved over three times and close to the blue excitation sources. Our study indicates that nanophosphors can become promising fluorescent materials in VLC, and provides a new direction for developing wide-bandwidth VLC systems.
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Affiliation(s)
- Dingke Xue
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China
| | - Cheng Ruan
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China
| | - Haobin Chen
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China
| | - Xiongbin Chen
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China
| | - Changfeng Wu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China
| | - Chuantao Zheng
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China
| | - Hongda Chen
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China
| | - William W Yu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, People’s Republic of China
- Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115, United States of America
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Peng L, Zhao D, Jiang D, Zhu J, Liu Z, Chen P, Yang J, Liu W, Liang F, Xing Y, Liu S, Zhang L, Wang W, Li M, Zhang Y, Du G. Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells. OPTICS EXPRESS 2018; 26:21736-21744. [PMID: 30130875 DOI: 10.1364/oe.26.021736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2018] [Accepted: 07/23/2018] [Indexed: 06/08/2023]
Abstract
Twelve InGaN MQW LED samples with varying well thickness grown via metal-organic chemical vaper deposition (MOCVD) are investigated. It is observed from electroluminescence (EL) measurement that at low current densities, the peak energy shifts to blue with increasing current, and when the current change by fixed increment, the peak energy shifts to blue end to different extent among samples. This blue shift was expected to be stronger when the well thickness increases, however, for well widths above 5 nm we observe a decrease in emission energy. Since no relaxation was detected from reciprocal space mapping (RSM), the deteriorated homogeneity is found to be responsible for this phenomenon. Temperature dependent photoluminescence (TDPL) results analyzed by band-tail model fitting show that the localization effect gets more prominent with increasing well thickness. It is found that elevating the growth temperature of active region from 710°C to 750°C significantly improves the homogeneity of InGaN layer.
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Peng M, Zheng X, Wei H, He Y, Li M, An Y, Qiu P, Song Y. Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics. OPTICS EXPRESS 2018; 26:A615-A625. [PMID: 30114055 DOI: 10.1364/oe.26.00a615] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2018] [Accepted: 05/03/2018] [Indexed: 06/08/2023]
Abstract
The spatial distribution of electric field in photovoltaic multiple quantum wells (MQWs) is extremely important to dictate the mutual competition of photoelectric conversion and optical transition. Here, electric-field-driven photoluminescence (PL) in both steady-state and transient-state has been utilized to directly investigate the internal photoelectric conversion processes in InGaN-based MQW photovoltaic cell. As applying the reversed external electric field, the compensation of the quantum confined stark effect (QCSE) in InGaN QW is beneficial to help the photoabsorbed minor carriers drift out from the localized states, whereas extremely weakening the PL radiative recombination. A directly driven force by the reversed external electric field decreases the transit time of photocarriers drifting in InGaN QW. And hence, the overall dynamic PL decay including both the slow and fast processes gradually speeds up from 19.2 ns at the open-circuit condition to 3.9 ns at a negative bias of -3 V. In particular, the slow PL decay lifetime declines more quickly than that of the fast one. It is the delocalization of photocarriers by electric-field drift that helps to further enhance the high-efficiency photoelectric conversion except for the tunneling transport in InGaN-based MQW photovoltaics. Therefore, it can be concluded that the electric-field PL probe may provide a direct method for evaluating the photoelectric conversion in multilayer quantum structures and related multijunction photovoltaic cells.
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Zhang Y, Zhai J, Wang ZL. Piezo-Phototronic Matrix via a Nanowire Array. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1702377. [PMID: 29058785 DOI: 10.1002/smll.201702377] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2017] [Revised: 09/02/2017] [Indexed: 06/07/2023]
Abstract
Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity.
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Affiliation(s)
- Yang Zhang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Junyi Zhai
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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Liu X, Yu D, Cao F, Li X, Ji J, Chen J, Song X, Zeng H. Low-Voltage Photodetectors with High Responsivity Based on Solution-Processed Micrometer-Scale All-Inorganic Perovskite Nanoplatelets. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13. [PMID: 28508506 DOI: 10.1002/smll.201700364] [Citation(s) in RCA: 44] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2017] [Revised: 03/16/2017] [Indexed: 05/15/2023]
Abstract
All-inorganic photodetectors based on scattered CsPbBr3 nanoplatelets with lateral dimension as large as 10 µm are fabricated, and the CsPbBr3 nanoplatelets are solution processed governed by a newly developed ion-exchange soldering mechanism. Under illumination of a 442 nm laser, the photoresponsivity of photodetectors based on these scattered CsPbBr3 nanoplatelets is as high as 34 A W-1 , which is the largest value reported from all-inorganic perovskite photodetectors with an external driven voltage as small as 1.5 V. Moreover, the rise and fall times are 0.6 and 0.9 ms, respectively, which are comparable to most of the state-of-the-art all-inorganic perovskite-based photodetectors. All the material synthesis and device characterization are conducted at room temperature in ambient air. This work demonstrates that the solution-processed large CsPbBr3 nanoplatelets are attractive candidates to be applied in low-voltage, low-cost, ultra highly integrated optoelectronic devices.
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Affiliation(s)
- Xuhai Liu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dejian Yu
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Fei Cao
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xiaoming Li
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Jianping Ji
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Jun Chen
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xiufeng Song
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Haibo Zeng
- Institute of Optoelectronics & Nanomaterials, MIIT Key Laboratory of Advanced Display Material and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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12
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Lee S, Lee Y, Panin GN. Novel Green Luminescent and Phosphorescent Material: Semiconductive Nanoporous ZnMnO with Photon Confinement. ACS APPLIED MATERIALS & INTERFACES 2017; 9:20630-20636. [PMID: 28570046 DOI: 10.1021/acsami.7b01557] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A novel green luminescent and phosphorescent material of semiconductive nanoporous ZnMnO was synthesized by the thermal nucleation of nanopores in the 20-period Zn0.93Mn0.07O/Zn0.65Mn0.35O multilayer structure. Nanoporous ZnMnO showed an n-type semiconducting property and exhibited an extremely strong green light emission in its luminescence and phosphorescence characteristics. This arises from the formation of the localized energy level (i.e., green emission band) within the energy band gap and the confinement of photons. The results suggest nanoporous ZnMnO to have a great potential for the new type of semiconducting green phosphors and semiconductor light-emitting diodes with lower thresholds, producing an efficient light emission. In-depth analyses on the structural, electrical, and optical properties are thoroughly examined, and the formation mechanism of nanoporous ZnMnO and the origin of the strong green light emission are discussed.
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Affiliation(s)
- Sejoon Lee
- Department of Semiconductor Science, Dongguk University-Seoul , Seoul 04623, Korea
- Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul , Seoul 04623, Korea
| | - Youngmin Lee
- Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul , Seoul 04623, Korea
| | - Gennady N Panin
- Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul , Seoul 04623, Korea
- Nano Information Technology Academy, Dongguk University-Seoul , Seoul 04623, Korea
- Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences , 142432 Chernogolovka, Russia
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13
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Huang X, Jiang C, Du C, Jing L, Liu M, Hu W, Wang ZL. Enhanced Luminescence Performance of Quantum Wells by Coupling Piezo-Phototronic with Plasmonic Effects. ACS NANO 2016; 10:11420-11427. [PMID: 28024322 DOI: 10.1021/acsnano.6b06998] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
With a promising prospect of light-emitting diodes as an attractive alternative to conventional light sources, remaining challenges still cannot be addressed owing to their limited efficiency. Among the continued scientific efforts, significant improvement on the emission efficiency has been achieved via either piezo-phototronic effect-based strain modulation or resonant excitation of plasmons in metallic nanostructures. Here, we present the investigation on the coupling process between piezo-phototronic effect and localized surface plasmonic resonance for enhancing the photoluminescence of InGaN/GaN quantum wells coated with Ag nanoparticles. The underlying physical mechanism of experimental results originates from tuning plasmonic resonance controlled by the shift of emission wavelength via piezo-phototronic effect, and it is further confirmed with the support of theoretical calculations. As a result, our research provides an approach to the integration of plasmonics with piezo-phototronic effect and brings widespread applications to high-efficiency artificial lighting, on-chip integrated plasmonic circuits, subwavelength optical communication, and micro-optoelectronic mechanical systems.
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Affiliation(s)
- Xin Huang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Chunyan Jiang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Chunhua Du
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Liang Jing
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Mengmeng Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Weiguo Hu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
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Liu J, Zhang Y, Liu C, Peng M, Yu A, Kou J, Liu W, Zhai J, Liu J. Piezo-phototronic effect enhanced UV photodetector based on CuI/ZnO double-shell grown on flexible copper microwire. NANOSCALE RESEARCH LETTERS 2016; 11:281. [PMID: 27255901 PMCID: PMC4891311 DOI: 10.1186/s11671-016-1499-1] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2016] [Accepted: 05/23/2016] [Indexed: 05/12/2023]
Abstract
In this work, we present a facile, low-cost, and effective approach to fabricate the UV photodetector with a CuI/ZnO double-shell nanostructure which was grown on common copper microwire. The enhanced performances of Cu/CuI/ZnO core/double-shell microwire photodetector resulted from the formation of heterojunction. Benefiting from the piezo-phototronic effect, the presentation of piezocharges can lower the barrier height and facilitate the charge transport across heterojunction. The photosensing abilities of the Cu/CuI/ZnO core/double-shell microwire detector are investigated under different UV light densities and strain conditions. We demonstrate the I-V characteristic of the as-prepared core/double-shell device; it is quite sensitive to applied strain, which indicates that the piezo-phototronic effect plays an essential role in facilitating charge carrier transport across the CuI/ZnO heterojunction, then the performance of the device is further boosted under external strain.
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Affiliation(s)
- Jingyu Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China
| | - Yang Zhang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China
| | - Caihong Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China
| | - Mingzeng Peng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China
| | - Aifang Yu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China
| | - Jinzong Kou
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China
| | - Wei Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China
| | - Junyi Zhai
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China.
| | - Juan Liu
- College of Environmental Sciences and Engineering, Peking University, Beijing, China.
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Du C, Huang X, Jiang C, Pu X, Zhao Z, Jing L, Hu W, Wang ZL. Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication. Sci Rep 2016; 6:37132. [PMID: 27841368 PMCID: PMC5107897 DOI: 10.1038/srep37132] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2016] [Accepted: 10/25/2016] [Indexed: 11/09/2022] Open
Abstract
In recent years, visible light communication (VLC) technology has attracted intensive attention due to its huge potential in superior processing ability and fast data transmission. The transmission rate relies on the modulation bandwidth, which is predominantly determined by the minority-carrier lifetime in III-group nitride semiconductors. In this paper, the carrier dynamic process under a stress field was studied for the first time, and the carrier recombination lifetime was calculated within the framework of quantum perturbation theory. Owing to the intrinsic strain due to the lattice mismatch between InGaN and GaN, the wave functions for the holes and electrons are misaligned in an InGaN/GaN device. By applying an external strain that "cancels" the internal strain, the overlap between the wave functions can be maximized so that the lifetime of the carrier is greatly reduced. As a result, the maximum speed of a single chip was increased from 54 MHz up to 117 MHz in a blue LED chip under 0.14% compressive strain. Finally, a bandwidth contour plot depending on the stress and operating wavelength was calculated to guide VLC chip design and stress optimization.
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Affiliation(s)
- Chunhua Du
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China
| | - Xin Huang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China
| | - Chunyan Jiang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China
| | - Xiong Pu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China
| | - Zhenfu Zhao
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China
| | - Liang Jing
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China
| | - Weiguo Hu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
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16
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Huang X, Du C, Zhou Y, Jiang C, Pu X, Liu W, Hu W, Chen H, Wang ZL. Piezo-Phototronic Effect in a Quantum Well Structure. ACS NANO 2016; 10:5145-5152. [PMID: 27088347 DOI: 10.1021/acsnano.6b00417] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.
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Affiliation(s)
- Xin Huang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
| | - Chunhua Du
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
| | - Yongli Zhou
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
| | - Chunyan Jiang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
| | - Xiong Pu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
| | - Wei Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
| | - Weiguo Hu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
| | - Hong Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, People's Republic of China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, People's Republic of China
- School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States
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