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Zhao Y, Lee S, Long T, Park HL, Lee TW. Natural biomaterials for sustainable flexible neuromorphic devices. Biomaterials 2025; 314:122861. [PMID: 39405825 DOI: 10.1016/j.biomaterials.2024.122861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Revised: 09/10/2024] [Accepted: 09/26/2024] [Indexed: 11/10/2024]
Abstract
Neuromorphic electronics use neural models in hardware to emulate brain-like behavior, and provide power-efficient, extremely compact, and massively-parallel processing, so they are ideal candidates for next-generation information-processing units. However, traditional rigid neuromorphic devices are limited by their unavoidable mechanical and geometrical mismatch with human tissues or organs. At the same time, the rapid development of these electronic devices has generated a large amount of electronic waste, thereby causing severe ecological problems. Natural biomaterials have mechanical properties compatible with biological tissues, and are environmentally benign, ultra-thin, and lightweight, so use of these materials can address these limitations and be used to create next-generation sustainable flexible neuromorphic electronics. Here, we explore the advantages of natural biomaterials in simulating synaptic behavior of sustainable neuromorphic devices. We present the flexibility, biocompatibility, and biodegradability of these neuromorphic devices, and consider the potential applicability of these properties in wearable and implantable bioelectronics. Finally, we consider the challenges of device fabrication and neuromorphic system integration by natural biomaterials, then suggest future research directions.
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Affiliation(s)
- Yanfei Zhao
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seungbeom Lee
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
| | - Tingyu Long
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hea-Lim Park
- Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea.
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea; Institute of Engineering Research, Research Institute of Advanced Materials, Soft Foundry, SN Display Co. Ltd., Interdisciplinary Program in Bioengineering, Seoul National University, Seoul, 08826, Republic of Korea.
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2
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Vural M, Demirel MC. Biocomposites of 2D layered materials. NANOSCALE HORIZONS 2025. [PMID: 39815818 DOI: 10.1039/d4nh00530a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2025]
Abstract
Molecular composites, such as bone and nacre, are everywhere in nature and play crucial roles, ranging from self-defense to carbon sequestration. Extensive research has been conducted on constructing inorganic layered materials at an atomic level inspired by natural composites. These layered materials exfoliated to 2D crystals are an emerging family of nanomaterials with extraordinary properties. These biocomposites are great for modulating electron, photon, and phonon transport in nanoelectronics and photonic devices but are challenging to translate into bulk materials. Combining 2D crystals with biomolecules enables various 2D nanocomposites with novel characteristics. This review has provided an overview of the latest biocomposites, including their structure, composition, and characterization. Layered biocomposites have the potential to improve the performance of many devices. For example, biocomposites use macromolecules to control the organization of 2D crystals, allowing for new capabilities such as flexible electronics and energy storage. Other applications of 2D biocomposites include biomedical imaging, tissue engineering, chemical and biological sensing, gas and liquid filtration, and soft robotics. However, some fundamental questions need to be answered, such as self-assembly and kinetically limited states of organic-inorganic phases in soft matter physics.
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Affiliation(s)
- Mert Vural
- Center for Research on Advanced Fiber Technologies (CRAFT), Materials Research Institute and Huck Institute of Life Sciences, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
| | - Melik C Demirel
- Center for Research on Advanced Fiber Technologies (CRAFT), Materials Research Institute and Huck Institute of Life Sciences, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
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3
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Lu C, Wang X, Liu XY. Flexible Meso Electronics and Photonics Based on Cocoon Silk and Applications. ACS Biomater Sci Eng 2024; 10:2784-2804. [PMID: 38597279 DOI: 10.1021/acsbiomaterials.4c00254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Flexible electronics, applicable to enlarged health, AI big data medications, etc., have been one of the most important technologies of this century. Due to its particular mechanical properties, biocompatibility, and biodegradability, cocoon silk (or SF, silk fibroin) plays a key role in flexible electronics/photonics. The review begins with an examination of the hierarchical meso network structures of SF materials and introduces the concepts of meso reconstruction, meso doping, and meso hybridization based on the correlation between the structure and performance of silk materials. The SF meso functionalization was developed according to intermolecular nuclear templating. By implementation of the techniques of meso reconstruction and functionalization in the refolding of SF materials, extraordinary performance can be achieved. Relying on this strategy, particularly designed flexible electronic and photonic components can be developed. This review covers the latest ideas and technologies of meso flexible electronics and photonics based on SF materials/meso functionalization. As silk materials are biocompatible and human skin-friendly, SF meso flexible electronic/photonic components can be applied to wearable or implanted devices. These devices are applicable in human physiological signals and activities sensing/monitoring. In the case of human-machine interaction, the devices can be applicable in in-body information transmission, computation, and storage, with the potential for the combination of artificial intelligence and human intelligence.
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Affiliation(s)
- Changsheng Lu
- State Key Laboratory of Marine Environmental Science (MEL), College of Ocean and Earth Sciences, Xiamen University, Xiamen, Fujian 361102, P.R. China
| | - Xiao Wang
- State Key Laboratory of Marine Environmental Science (MEL), College of Ocean and Earth Sciences, Xiamen University, Xiamen, Fujian 361102, P.R. China
| | - Xiang Yang Liu
- State Key Laboratory of Marine Environmental Science (MEL), College of Ocean and Earth Sciences, Xiamen University, Xiamen, Fujian 361102, P.R. China
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4
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Chen X, Zhao X, Huang X, Tang XZ, Sun Z, Ni DL, Hu H, Yue J. Flexible multilevel nonvolatile biocompatible memristor with high durability. J Nanobiotechnology 2023; 21:375. [PMID: 37833677 PMCID: PMC10576337 DOI: 10.1186/s12951-023-02117-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Accepted: 09/20/2023] [Indexed: 10/15/2023] Open
Abstract
Current protein or glucose based biomemristors have low resistance-switching performance and require complex structural designs, significantly hindering the development of implantable memristor devices. It is imperative to discover novel candidate materials for biomemristor with high durability and excellent biosafety for implantable health monitoring. Herein, we initially demonstrate the resistance switching characteristics of a nonvolatile memristor in a configuration of Pt/AlOOH/ITO consisting of biocompatible AlOOH nanosheets sandwiched between a Indium Tin Oxides (ITO) electrode and a platinum (Pt) counter-electrode. The hydrothermally synthesized AlOOH nanosheets have excellent biocompatibility as confirmed through the Cell Counting Kit-8 (CCK-8) tests. Four discrete resistance levels are achieved in this assembled device in responsible to different compliance currents (ICC) for the set process, where the emerging multilevel states show high durability over 103 cycles, outperforming the protein-based biomemristors under similar conditions. The excellent performance of the Pt/AlOOH/ITO memristor is attributed to the significant role of hydrogen proton with pipe effect, as confirmed by both experimental results and density functional theory (DFT) analyses. The present results indicate the nonvolatile memristors with great potential as the next generation implantable multilevel resistive memories for long-term human health monitoring.
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Affiliation(s)
- Xiaoping Chen
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China
| | - Xu Zhao
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China
| | - Xiaozhong Huang
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China
| | - Xiu-Zhi Tang
- Research Institute of Aerospace Technology, Central South University, Changsha, 410083, China
| | - Ziqi Sun
- School of Chemistry and Physics, QUT Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4001, Australia.
| | - Da-Long Ni
- Department of Orthopaedics, Shanghai Key Laboratory for Prevention and Treatment of Bone and Joint Diseases, Shanghai Institute of Traumatology and Orthopaedics, Ruijin Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai, 200025, China.
| | - Hailong Hu
- State Key Laboratory of Powder Metallurgy, Hunan Key Laboratory of Advanced fibers and Composites, State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Research Institute of Aerospace Technology, Central South University, Changsha, 410083, China.
| | - Jianling Yue
- Powder Metallurgy Research Institute, Central South University, Changsha, 410083, China.
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Jian J, Dong P, Jian Z, Zhao T, Miao C, Chang H, Chen J, Chen YF, Chen YB, Feng H, Sorli B. Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs. ACS NANO 2022; 16:20445-20456. [PMID: 36468939 DOI: 10.1021/acsnano.2c06728] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fabricate low-power and high-switching-ratio RRAM by adjusting the interstice radius (rg) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with rg. When the ratio of rg to the radius of the metal ions that form the conductive filaments (rg/rAg+) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing rg/rAg+. For the fabricated Ag/[SnS2/poly(methyl methacrylate)]/Cu RRAM with an rg/rAg+ of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10-10 W and 106, respectively. After 104 switching cycles and a 104 s retention time, the switching ratio of the device can still be stable above 106. Bending has no influence on the performance of the device when the bending radius is not <2 mm.
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Affiliation(s)
- Jiaying Jian
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Pengfan Dong
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Zengyun Jian
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Ting Zhao
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Chen Miao
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Honglong Chang
- School of Mechanical Engineering, Northwestern Polytechnical University, Xi'an710072, China
| | - Jian Chen
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Yan-Feng Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing210093, China
| | - Yan-Bin Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing210093, China
| | - Hao Feng
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Brice Sorli
- Institute of Electronics and Systems, University of Montpellier, Montpellier34095, France
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6
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Xu J, Zhao X, Zhao X, Wang Z, Tang Q, Xu H, Liu Y. Memristors with Biomaterials for Biorealistic Neuromorphic Applications. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022] Open
Affiliation(s)
- Jiaqi Xu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Xiaoning Zhao
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Xiaoli Zhao
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Zhongqiang Wang
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Qingxin Tang
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Haiyang Xu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Yichun Liu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
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7
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Shi M, Hu Y, Luo X, Liu L, Yu J, Fan Y. Tiny NaOH Assisted Facile Preparation of Silk Nanofibers and Their Nanotube-Compositing Strong, Flexible, and Conductive Films. ACS Biomater Sci Eng 2022; 8:4014-4023. [PMID: 35985039 DOI: 10.1021/acsbiomaterials.2c00667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Natural silk nanofibers (SNFs) can not only be used as good building blocks for two- or three-dimensional biomaterials but also provide a clue for understanding the theory of structure-function relationships. Nevertheless, it is still difficult to directly extract SNFs from natural silk fibers due to their high crystallinity and recalcitrant complex structures. In the present study, a dilute alkali-assisted separation of high-yield SNFs is proposed. The degummed silk was first treated with a tiny amount of alkali at a mild temperature, followed by high-pressure homogenization. Under the optimized conditions (2% sodium hydroxide, 0 °C, 48 h), SNFs with diameters of 8-42 nm and lengths of 0.9 ± 0.3 μm were prepared with yields higher than 75%, which retained the natural structures at the nanoscale and some inherent properties of silk fibers. Interestingly, SNFs can be used as a stabilizing matrix to assist carbon nanotubes (CNTs) to disperse, aiming to form a uniform and stable CNT/SNF dispersion. Thereafter, a strong and flexible conductive composite film was fabricated with good mechanical properties. The composite film showed good piezoelectric properties and electric thermal response, which has promising application prospects for SNFs, such as in optical devices, nanoelectronics, and biosensors.
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Affiliation(s)
- Mengyue Shi
- Jiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Longpan Road 159, Nanjing 210037, China
| | - Yanlei Hu
- Jiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Longpan Road 159, Nanjing 210037, China
| | - Xin Luo
- Jiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Longpan Road 159, Nanjing 210037, China
| | - Liang Liu
- Jiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Longpan Road 159, Nanjing 210037, China
| | - Juan Yu
- Jiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Longpan Road 159, Nanjing 210037, China
| | - Yimin Fan
- Jiangsu Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Longpan Road 159, Nanjing 210037, China
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8
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Mao S, Sun B, Zhou G, Guo T, Wang J, Zhao Y. Applications of biomemristors in next generation wearable electronics. NANOSCALE HORIZONS 2022; 7:822-848. [PMID: 35697026 DOI: 10.1039/d2nh00163b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
With the rapid development of mobile internet and artificial intelligence, wearable electronic devices have a great market prospect. In particular, information storage and processing of real-time collected data are an indispensable part of wearable electronic devices. Biomaterial-based memristive systems are suitable for storage and processing of the obtained information in wearable electronics due to the accompanying merits, i.e. sustainability, lightweight, degradability, low power consumption, flexibility and biocompatibility. So far, many biomaterial-based flexible and wearable memristive devices were prepared by spin coating or other technologies on a flexible substrate at room temperature. However, mechanical deformation caused by mechanical mismatch between devices and soft tissues leads to the instability of device performance. From the current research and practical application, the device will face great challenges when adapting to different working environments. In fact, some interesting studies have been performed to address the above issues while they were not intensively highlighted and overviewed. Herein, the progress in wearable biomemristive devices is reviewed, and the outlook and perspectives are provided in consideration of the existing challenges during the development of wearable biomemristive systems.
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Affiliation(s)
- Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
| | - Bai Sun
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Guangdong Zhou
- Scholl of Artificial Intelligence, Southwest University, Chongqing, 400715, China
| | - Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Jiangqiu Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
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9
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Gao D, Lv J, Lee PS. Natural Polymer in Soft Electronics: Opportunities, Challenges, and Future Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105020. [PMID: 34757632 DOI: 10.1002/adma.202105020] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Revised: 08/20/2021] [Indexed: 05/21/2023]
Abstract
Pollution caused by nondegradable plastics has been a serious threat to environmental sustainability. Natural polymers, which can degrade in nature, provide opportunities to replace petroleum-based polymers, meanwhile driving technological advances and sustainable practices. In the research field of soft electronics, regenerated natural polymers are promising building blocks for passive dielectric substrates, active dielectric layers, and matrices in soft conductors. Here, the natural-polymer polymorphs and their compatibilization with a variety of inorganic/organic conductors through interfacial bonding/intermixing and surface functionalization for applications in various device modalities are delineated. Challenges that impede the broad utilization of natural polymers in soft electronics, including limited durability, compromises between conductivity and deformability, and limited exploration in controllable degradation, etc. are explicitly inspected, while the potential solutions along with future prospects are also proposed. Finally, integrative considerations on material properties, device functionalities, and environmental impact are addressed to warrant natural polymers as credible alternatives to synthetic ones, and provide viable options for sustainable soft electronics.
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Affiliation(s)
- Dace Gao
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jian Lv
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Pooi See Lee
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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10
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Abstract
Personal, portable, and wearable electronics have become items of extensive use in daily life. Their fabrication requires flexible electronic components with high storage capability or with continuous power supplies (such as solar cells). In addition, formerly rigid tools such as electrochromic windows find new utilizations if they are fabricated with flexible characteristics. Flexibility and performances are determined by the material composition and fabrication procedures. In this regard, low-cost, easy-to-handle materials and processes are an asset in the overall production processes and items fruition. In the present mini-review, the most recent approaches are described in the production of flexible electronic devices based on NiO as low-cost material enhancing the overall performances. In particular, flexible NiO-based all-solid-state supercapacitors, electrodes electrochromic devices, temperature devices, and ReRAM are discussed, thus showing the potential of NiO as material for future developments in opto-electronic devices.
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Pham DM, Dey S, Katayama A. Activation of extracellular electron network in non-electroactive bacteria by Bombyx mori silk. Int J Biol Macromol 2022; 195:1-11. [PMID: 34871655 DOI: 10.1016/j.ijbiomac.2021.11.190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2021] [Revised: 11/18/2021] [Accepted: 11/27/2021] [Indexed: 11/05/2022]
Abstract
Extracellular electron transfer material (EETM) has increasingly attracted attentions for the enhancing effect on multiple microbial reactions. Especially, EETM is known to be essential to activate the energy network in non-electroactive bacteria. It is motivated to find out an EETM which is natural-based, environmentally friendly, and easily produced at large-scale. In this study, Bombyx mori silk is found, for the first time, to function as an EETM by using an EETM-dependent pentachlorophenol (PCP) dechlorinating anaerobic microbial culture. Subsequently, by dividing fibroin fiber into different soluble/insoluble fractions and correlating their EET functions with their structural properties based on various spectroscopic analyses, the β-sheet configuration is suggested as an essential structure supporting the EET function of silk materials. The analyses also suggested the involvement of sulfur-containing amino acids in this function. The EET function is not degraded by boiling or acid/alkaline treatments and the material can be utilized multiple times, although it is susceptible to UV irradiation. Bombyx mori silk also enhance other microbial reactions, including Fe(III)OOH reduction, CO2 reduction to acetate, and nitrogen fixation. This discovery provides a basis for developing biotechnology for environmental remediation, global warming reduction, and biofertilizer production using Bombyx mori silk and its wastes.
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Affiliation(s)
- Duyen M Pham
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan.
| | - Sujan Dey
- Department of Civil Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
| | - Arata Katayama
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan; Department of Civil Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan.
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Liu X, Cao J, Qiu J, Zhang X, Wang M, Liu Q. Flexible and Stretchable Memristive Arrays for in-Memory Computing. FRONTIERS IN NANOTECHNOLOGY 2022. [DOI: 10.3389/fnano.2021.821687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
With the tremendous progress of Internet of Things (IoT) and artificial intelligence (AI) technologies, the demand for flexible and stretchable electronic systems is rapidly increasing. As the vital component of a system, existing computing units are usually rigid and brittle, which are incompatible with flexible and stretchable electronics. Emerging memristive devices with flexibility and stretchability as well as direct processing-in-memory ability are promising candidates to perform data computing in flexible and stretchable electronics. To execute the in-memory computing paradigm including digital and analogue computing, the array configuration of memristive devices is usually required. Herein, the recent progress on flexible and stretchable memristive arrays for in-memory computing is reviewed. The common materials used for flexible memristive arrays, including inorganic, organic and two-dimensional (2D) materials, will be highlighted, and effective strategies used for stretchable memristive arrays, including material innovation and structural design, will be discussed in detail. The current challenges and future perspectives of the in-memory computing utilizing flexible and stretchable memristive arrays are presented. These efforts aim to accelerate the development of flexible and stretchable memristive arrays for data computing in advanced intelligent systems, such as electronic skin, soft robotics, and wearable devices.
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Shi C, Hu F, Wu R, Xu Z, Shao G, Yu R, Liu XY. New Silk Road: From Mesoscopic Reconstruction/Functionalization to Flexible Meso-Electronics/Photonics Based on Cocoon Silk Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005910. [PMID: 33852764 DOI: 10.1002/adma.202005910] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2020] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
Two of the key questions to be addressed are whether and how one can turn cocoon silk into fascinating materials with different electronic and optical functions so as to fabricate the flexible devices. In this review, a comprehensive overview of the unique strategy of mesoscopic functionalization starting from silk fibroin (SF) materials to the fabrication of various meso flexible SF devices is presented. Notably, SF materials with novel and enhanced properties can be achieved by mesoscopically reconstructing the hierarchical structures of SF materials. This is based on rerouting the refolding process of SF molecules by meso-nucleation templating. As-acquired functionalized SF materials can be applied to fabricate bio-compatible/degradable flexible/implantable meso-optical/electronic devices of various types. Consequently, functionalized SF can be fabricated into optical elements, that is, nonlinear photonic and fluorescent components, and make it possible to construct silk meso-electronics with high-performance. These advances enable the applications of SF-material based devices in the areas of physical and biochemical sensing, meso-memristors, transistors, brain electrodes, and energy generation/storage, applicable to on-skin long-term monitoring of human physiological conditions, and in-body sensing, information processing, and storage.
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Affiliation(s)
- Chenyang Shi
- College of Ocean and Earth Sciences, College of Materials, College of Physical Science and Technology, State Key Laboratory of Marine Environmental Science (MEL), Research Institute for Biomimetics and Soft Matter, Xiamen University, 422 Siming Nan Road, Xiamen, 361005, P. R. China
| | - Fan Hu
- College of Ocean and Earth Sciences, College of Materials, College of Physical Science and Technology, State Key Laboratory of Marine Environmental Science (MEL), Research Institute for Biomimetics and Soft Matter, Xiamen University, 422 Siming Nan Road, Xiamen, 361005, P. R. China
| | - Ronghui Wu
- College of Ocean and Earth Sciences, College of Materials, College of Physical Science and Technology, State Key Laboratory of Marine Environmental Science (MEL), Research Institute for Biomimetics and Soft Matter, Xiamen University, 422 Siming Nan Road, Xiamen, 361005, P. R. China
| | - Zijie Xu
- College of Ocean and Earth Sciences, College of Materials, College of Physical Science and Technology, State Key Laboratory of Marine Environmental Science (MEL), Research Institute for Biomimetics and Soft Matter, Xiamen University, 422 Siming Nan Road, Xiamen, 361005, P. R. China
| | - Guangwei Shao
- College of Ocean and Earth Sciences, College of Materials, College of Physical Science and Technology, State Key Laboratory of Marine Environmental Science (MEL), Research Institute for Biomimetics and Soft Matter, Xiamen University, 422 Siming Nan Road, Xiamen, 361005, P. R. China
- College of Textiles, Engineering Research Center of Technical Textile of Ministry of Education, Donghua University, Shanghai, 201620, P. R. China
| | - Rui Yu
- College of Ocean and Earth Sciences, College of Materials, College of Physical Science and Technology, State Key Laboratory of Marine Environmental Science (MEL), Research Institute for Biomimetics and Soft Matter, Xiamen University, 422 Siming Nan Road, Xiamen, 361005, P. R. China
| | - Xiang Yang Liu
- College of Ocean and Earth Sciences, College of Materials, College of Physical Science and Technology, State Key Laboratory of Marine Environmental Science (MEL), Research Institute for Biomimetics and Soft Matter, Xiamen University, 422 Siming Nan Road, Xiamen, 361005, P. R. China
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
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14
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Abstract
Bio-memristors constitute candidates for the next generation of non-volatile storage and bionic synapses due to their biocompatibility, environmental benignity, sustainability, flexibility, degradability, and impressive memristive performance. Silk fibroin (SF), a natural and abundant biomaterial with excellent mechanical, optical, electrical, and structure-adjustable properties as well as being easy to process, has been utilized and shown to have potential in the construction of bio-memristors. Here, we first summarize the fundamental mechanisms of bio-memristors based on SF. Then, the latest achievements and developments of pristine and composited SF-based memristors are highlighted, followed by the integration of memristive devices. Finally, the challenges and insights associated with SF-based bio-memristors are presented. Advances in SF-based bio-memristors will open new avenues in the design and integration of high-performance bio-integrated systems and facilitate their application in logic operations, complex circuits, and neural networks.
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Affiliation(s)
- Yi Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
| | - Suna Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
| | - Yaopeng Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
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15
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Xiong H, Ling S, Li Y, Duan F, Zhu H, Lu S, Du M. Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane. J Colloid Interface Sci 2021; 608:1126-1134. [PMID: 34735849 DOI: 10.1016/j.jcis.2021.10.126] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Revised: 10/12/2021] [Accepted: 10/21/2021] [Indexed: 01/12/2023]
Abstract
The recyclable, self-healing and easily-degradable transient electronic technology has aroused tremendous attention in flexible electronic products. However, integrating the above advantages into one single flexible electronic device is still a huge challenge. Herein, we demonstrate a flexible and recyclable bio-based memory device using fish colloid as the resistive switching layer on a polyimine substrate, which affords reliable mechanical and electrical properties under repetitive conformal deformation operation. This flexible bio-based memory device presents potential analog behaviors including memory characteristics and excitatory current response, which undergoes incremental potentiation in conductance under successive electrical pulses. Moreover, this device is expected to greatly alleviate the environmental problems caused by electronic waste. It can be decomposed rapidly in water and well recycled, which is a promising candidate for transient memories and information security. We believe that this study can provide new possibilities to the field of high-performance transient electronics and flexible resistive memory devices.
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Affiliation(s)
- Hanli Xiong
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Songtao Ling
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
| | - Fang Duan
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Han Zhu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Shuanglong Lu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China.
| | - Mingliang Du
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China.
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16
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Naskar D, Sapru S, Ghosh AK, Reis RL, Dey T, Kundu SC. Nonmulberry silk proteins: multipurpose ingredient in bio-functional assembly. Biomed Mater 2021; 16. [PMID: 34428758 DOI: 10.1088/1748-605x/ac20a0] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Accepted: 08/24/2021] [Indexed: 01/27/2023]
Abstract
The emerging field of tissue engineering and regenerative medicines utilising artificial polymers is facing many problems. Despite having mechanical stability, non-toxicity and biodegradability, most of them lack cytocompatibility and biocompatibility. Natural polymers (such as collagen, hyaluronic acid, fibrin, fibroin, and others), including blends, are introduced to the field to solve some of the relevant issues. Another natural biopolymer: silkworm silk gained special attention primarily due to its specific biophysical, biochemical, and material properties, worldwide availability, and cost-effectiveness. Silk proteins, namely fibroin and sericin extracted from domesticated mulberry silkwormBombyx mori, are studied extensively in the last few decades for tissue engineering. Wild nonmulberry silkworm species, originated from India and other parts of the world, also produce silk proteins with variations in their nature and properties. Among the nonmulberry silkworm species,Antheraea mylitta(Indian Tropical Tasar),A. assamensis/A. assama(Indian Muga), andSamia ricini/Philosamia ricini(Indian Eri), along withA. pernyi(Chinese temperate Oak Tasar/Tussah) andA. yamamai(Japanese Oak Tasar) exhibit inherent tripeptide motifs of arginyl glycyl aspartic acid in their fibroin amino acid sequences, which support their candidacy as the potential biomaterials. Similarly, sericin isolated from such wild species delivers unique properties and is used as anti-apoptotic and growth-inducing factors in regenerative medicines. Other characteristics such as biodegradability, biocompatibility, and non-inflammatory nature make it suitable for tissue engineering and regenerative medicine based applications. A diverse range of matrices, including but not limited to nano-micro scale structures, nanofibres, thin films, hydrogels, and porous scaffolds, are prepared from the silk proteins (fibroins and sericins) for biomedical and tissue engineering research. This review aims to represent the progress made in medical and non-medical applications in the last couple of years and depict the present status of the investigations on Indian nonmulberry silk-based matrices as a particular reference due to its remarkable potentiality of regeneration of different types of tissues. It also discusses the future perspective in tissue engineering and regenerative medicines in the context of developing cutting-edge techniques such as 3D printing/bioprinting, microfluidics, organ-on-a-chip, and other electronics, optical and thermal property-based applications.
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Affiliation(s)
- Deboki Naskar
- Department of Biotechnology, Indian Institute of Technology, Kharagpur, West Bengal 721302, India.,Present address: Cambridge Institute for Medical Research, School of Clinical Medicine, University of Cambridge, Hills Road, Cambridge CB2 0XY, United Kingdom
| | - Sunaina Sapru
- Department of Biotechnology, Indian Institute of Technology, Kharagpur, West Bengal 721302, India.,Present address: Robert H. Smith Faculty of Agriculture, Food and Environment, The Institute of Plant Sciences and Genetics in Agriculture, The Hebrew University of Jerusalem, Rehovot, IL, Israel
| | - Ananta K Ghosh
- Department of Biotechnology, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Rui L Reis
- 3Bs Research Group, I3Bs-Research Institute on Biomaterials, Biodegradables and Biomimetics, University of Minho, Headquarters of the European Institute of Excellence on Tissue Engineering and Regenerative Medicine, AvePark-4805-017 Barco, Guimaraes, Portugal
| | - Tuli Dey
- Institute of Bioinformatics and Biotechnology, Savitribai Phule Pune University, Pune, Maharashtra 411007, India
| | - Subhas C Kundu
- Department of Biotechnology, Indian Institute of Technology, Kharagpur, West Bengal 721302, India.,3Bs Research Group, I3Bs-Research Institute on Biomaterials, Biodegradables and Biomimetics, University of Minho, Headquarters of the European Institute of Excellence on Tissue Engineering and Regenerative Medicine, AvePark-4805-017 Barco, Guimaraes, Portugal
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17
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Zhang Y, Han F, Fan S, Zhang Y. Low-Power and Tunable-Performance Biomemristor Based on Silk Fibroin. ACS Biomater Sci Eng 2021; 7:3459-3468. [PMID: 34165975 DOI: 10.1021/acsbiomaterials.1c00513] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Biomemristors have attracted significant attention because of their potential applications in logic operations, nonvolatile memory, and synaptic emulators, thus leading to the urgent need to improve memristive performance. In this work, a silk fibroin (SF)-based memristor, integrated with both low power and low operating current simultaneously, has been reported. Doping the SF with Ag and an ethanol-based post-treatment promote microcrystal formation in the bulk of the SF. This induces carrier transport along fixed, short paths and results in a low set voltage, low operating current, and high memristive stability. Such performances can greatly reduce power consumption and heat generation, beneficial for the accuracy and durability of memristor devices. The memristive mechanism of SF-based memristors with different Ag contents is the space-charge-limited conduction (SCLC) mechanism. In addition, the nonlinear transmission property of SF-based memristors suggests useful applications in bioelectronics.
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Affiliation(s)
- Yi Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China
| | - Fang Han
- College of Information Science and Technology, Donghua University, Shanghai 201620, P. R. China
| | - Suna Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China
| | - Yaopeng Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China
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18
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Wen DL, Sun DH, Huang P, Huang W, Su M, Wang Y, Han MD, Kim B, Brugger J, Zhang HX, Zhang XS. Recent progress in silk fibroin-based flexible electronics. MICROSYSTEMS & NANOENGINEERING 2021; 7:35. [PMID: 34567749 PMCID: PMC8433308 DOI: 10.1038/s41378-021-00261-2] [Citation(s) in RCA: 65] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2020] [Accepted: 02/16/2021] [Indexed: 05/04/2023]
Abstract
With the rapid development of the Internet of Things (IoT) and the emergence of 5G, traditional silicon-based electronics no longer fully meet market demands such as nonplanar application scenarios due to mechanical mismatch. This provides unprecedented opportunities for flexible electronics that bypass the physical rigidity through the introduction of flexible materials. In recent decades, biological materials with outstanding biocompatibility and biodegradability, which are considered some of the most promising candidates for next-generation flexible electronics, have received increasing attention, e.g., silk fibroin, cellulose, pectin, chitosan, and melanin. Among them, silk fibroin presents greater superiorities in biocompatibility and biodegradability, and moreover, it also possesses a variety of attractive properties, such as adjustable water solubility, remarkable optical transmittance, high mechanical robustness, light weight, and ease of processing, which are partially or even completely lacking in other biological materials. Therefore, silk fibroin has been widely used as fundamental components for the construction of biocompatible flexible electronics, particularly for wearable and implantable devices. Furthermore, in recent years, more attention has been paid to the investigation of the functional characteristics of silk fibroin, such as the dielectric properties, piezoelectric properties, strong ability to lose electrons, and sensitivity to environmental variables. Here, this paper not only reviews the preparation technologies for various forms of silk fibroin and the recent progress in the use of silk fibroin as a fundamental material but also focuses on the recent advanced works in which silk fibroin serves as functional components. Additionally, the challenges and future development of silk fibroin-based flexible electronics are summarized. (1) This review focuses on silk fibroin serving as active functional components to construct flexible electronics. (2) Recent representative reports on flexible electronic devices that applied silk fibroin as fundamental supporting components are summarized. (3) This review summarizes the current typical silk fibroin-based materials and the corresponding advanced preparation technologies. (4) The current challenges and future development of silk fibroin-based flexible electronic devices are analyzed.
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Affiliation(s)
- Dan-Liang Wen
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - De-Heng Sun
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - Peng Huang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - Wen Huang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - Meng Su
- CIRMM, Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505 Japan
| | - Ya Wang
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Meng-Di Han
- Institute of Microelectronics, Peking University, 100087 Beijing, China
| | - Beomjoon Kim
- CIRMM, Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505 Japan
| | - Juergen Brugger
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Hai-Xia Zhang
- Institute of Microelectronics, Peking University, 100087 Beijing, China
| | - Xiao-Sheng Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
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19
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Wang M, Luo Y, Wang T, Wan C, Pan L, Pan S, He K, Neo A, Chen X. Artificial Skin Perception. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003014. [PMID: 32930454 DOI: 10.1002/adma.202003014] [Citation(s) in RCA: 132] [Impact Index Per Article: 33.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 06/03/2020] [Indexed: 05/23/2023]
Abstract
Skin is the largest organ, with the functionalities of protection, regulation, and sensation. The emulation of human skin via flexible and stretchable electronics gives rise to electronic skin (e-skin), which has realized artificial sensation and other functions that cannot be achieved by conventional electronics. To date, tremendous progress has been made in data acquisition and transmission for e-skin systems, while the implementation of perception within systems, that is, sensory data processing, is still in its infancy. Integrating the perception functionality into a flexible and stretchable sensing system, namely artificial skin perception, is critical to endow current e-skin systems with higher intelligence. Here, recent progress in the design and fabrication of artificial skin perception devices and systems is summarized, and challenges and prospects are discussed. The strategies for implementing artificial skin perception utilize either conventional silicon-based circuits or novel flexible computing devices such as memristive devices and synaptic transistors, which enable artificial skin to surpass human skin, with a distributed, low-latency, and energy-efficient information-processing ability. In future, artificial skin perception would be a new enabling technology to construct next-generation intelligent electronic devices and systems for advanced applications, such as robotic surgery, rehabilitation, and prosthetics.
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Affiliation(s)
- Ming Wang
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Yifei Luo
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ting Wang
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Changjin Wan
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Liang Pan
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Shaowu Pan
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ke He
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Aden Neo
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xiaodong Chen
- Innovative Center for Flexible Devices, Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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20
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Molinnus D, Drinic A, Iken H, Kröger N, Zinser M, Smeets R, Köpf M, Kopp A, Schöning MJ. Towards a flexible electrochemical biosensor fabricated from biocompatible Bombyx mori silk. Biosens Bioelectron 2021; 183:113204. [PMID: 33836429 DOI: 10.1016/j.bios.2021.113204] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Revised: 03/22/2021] [Accepted: 03/24/2021] [Indexed: 12/13/2022]
Abstract
In modern days, there is an increasing relevance of and demand for flexible and biocompatible sensors for in-vivo and epidermal applications. One promising strategy is the implementation of biological (natural) polymers, which offer new opportunities for flexible biosensor devices due to their high biocompatibility and adjustable biodegradability. As a proof-of-concept experiment, a biosensor was fabricated by combining thin- (for Pt working- and counter electrode) and thick-film (for Ag/AgCl quasi-reference electrode) technologies: The biosensor consists of a fully bio-based and biodegradable fibroin substrate derived from silk fibroin of the silkworm Bombyx mori combined with immobilized enzyme glucose oxidase. The flexible glucose biosensor is encapsulated by a biocompatible silicon rubber which is certificated for a safe use onto human skin. Characterization of the sensor set-up is exemplarily demonstrated by glucose measurements in buffer and Ringer's solution, while the stability of the quasi-reference electrode has been investigated versus a commercial Ag/AgCl reference electrode. Repeated bending studies validated the mechanical properties of the electrode structures. The cross-sensitivity of the biosensor against ascorbic acid, noradrenaline and adrenaline was investigated, too. Additionally, biocompatibility and degradation tests of the silk fibroin with and without thin-film platinum electrodes were carried out.
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Affiliation(s)
- Denise Molinnus
- Institute of Nano- and Biotechnologies (INB), FH Aachen, Campus Jülich, Heinrich-Mußmann-Strasse 1, 52428, Jülich, Germany
| | - Aleksander Drinic
- Fibrothelium GmbH, TRIWO Technopark Aachen, Philipsstr. 8, 52068, Aachen, Germany
| | - Heiko Iken
- Institute of Nano- and Biotechnologies (INB), FH Aachen, Campus Jülich, Heinrich-Mußmann-Strasse 1, 52428, Jülich, Germany
| | - Nadja Kröger
- Department of Plastic, Reconstructive and Aesthetic Surgery, University Hospital of Cologne, Kerpener Str. 62, 50937, Cologne, Germany
| | - Max Zinser
- Department of Plastic, Reconstructive and Aesthetic Surgery, University Hospital of Cologne, Kerpener Str. 62, 50937, Cologne, Germany
| | - Ralf Smeets
- Department of Oral and Maxillofacial Surgery, Division of Regenerative Orofacial Medicine, University Medical Center Hamburg-Eppendorf, Martinistraße 52, Hamburg, Germany
| | - Marius Köpf
- Fibrothelium GmbH, TRIWO Technopark Aachen, Philipsstr. 8, 52068, Aachen, Germany
| | - Alexander Kopp
- Fibrothelium GmbH, TRIWO Technopark Aachen, Philipsstr. 8, 52068, Aachen, Germany
| | - Michael J Schöning
- Institute of Nano- and Biotechnologies (INB), FH Aachen, Campus Jülich, Heinrich-Mußmann-Strasse 1, 52428, Jülich, Germany; Forschungszentrum Jülich GmbH, Institute of Biological Information Processing (IBI-3), Wilhelm-Johnen-Strasse 6, 52425, Jülich, Germany.
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21
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Guo T, Sun B, Ranjan S, Jiao Y, Wei L, Zhou YN, Wu YA. From Memristive Materials to Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2020; 12:54243-54265. [PMID: 33232112 DOI: 10.1021/acsami.0c10796] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The information technologies have been increasing exponentially following Moore's law over the past decades. This has fundamentally changed the ways of work and life. However, further improving data process efficiency is facing great challenges because of physical and architectural limitations. More powerful computational methodologies are crucial to fulfill the technology gap in the post-Moore's law period. The memristor exhibits promising prospects in information storage, high-performance computing, and artificial intelligence. Since the memristor was theoretically predicted by L. O. Chua in 1971 and experimentally confirmed by HP Laboratories in 2008, it has attracted great attention from worldwide researchers. The intrinsic properties of memristors, such as simple structure, low power consumption, compatibility with the complementary metal oxide-semiconductor (CMOS) process, and dual functionalities of the data storage and computation, demonstrate great prospects in many applications. In this review, we cover the memristor-relevant computing technologies, from basic materials to in-memory computing and future prospects. First, the materials and mechanisms in the memristor are discussed. Then, we present the development of the memristor in the domains of the synapse simulating, in-memory logic computing, deep neural networks (DNNs) and spiking neural networks (SNNs). Finally, the existent technology challenges and outlook of the state-of-art applications are proposed.
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Affiliation(s)
- Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Bai Sun
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Shubham Ranjan
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Yixuan Jiao
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Chemical Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Lan Wei
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Y Norman Zhou
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Yimin A Wu
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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22
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Zhang Q, Peng B, Zhao Y, Li C, Zhu S, Shi K, Zhou Z, Zhang X, Liu M, Pan J. Flexible CoFeB/Silk Films for Biocompatible RF/Microwave Applications. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51654-51661. [PMID: 33141550 DOI: 10.1021/acsami.0c15530] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Aiming to realize the integration of signal processing with the human body, wearable and implantable radio frequency (RF)/microwave devices are rapidly developed. However, the insufficiency in skin commonality and biocompatibility brings up challenges in making such devices. In this study, an ultra-flexible and biocompatible CoFeB/silk film is developed potentially for on-skin and implantable RF/microwave applications. Moreover, the CoFeB/silk films present controllable dissolvability in aqueous solutions and exhibit great potentials in applications for environmentally friendly disposable devices. A strain-tunable bandstop filter based on the CoFeB/silk film was fabricated, which exhibited a large frequency tunability of 3 GHz and ability in monitoring the finger-joints' motions. This concept and method of combining ferromagnetic materials with the biocompatible substrate offers a novel pathway for wearable/implantable applications.
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Affiliation(s)
- Qi Zhang
- The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi'an Jiaotong University, Xi'an 710049, PR China
| | - Bin Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Yanan Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Chunlei Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Shukai Zhu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Keqing Shi
- Department of Intensive Care, Precision Medicine Center Laboratory, The First Affiliated Hospital of Wenzhou Medical University, Wenzhou 325000, PR China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Xiaohui Zhang
- The Key Laboratory of Biomedical Information Engineering of Ministry of Education, School of Life Science and Technology, Xi'an Jiaotong University, Xi'an 710049, PR China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Jingye Pan
- Department of Intensive Care, Precision Medicine Center Laboratory, The First Affiliated Hospital of Wenzhou Medical University, Wenzhou 325000, PR China
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23
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Park JH, Seok HJ, Kamaraj E, Park S, Kim HK. Highly transparent and flexible Ag nanowire-embedded silk fibroin electrodes for biocompatible flexible and transparent heater. RSC Adv 2020; 10:31856-31862. [PMID: 35518126 PMCID: PMC9056558 DOI: 10.1039/d0ra05990k] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/09/2020] [Accepted: 08/08/2020] [Indexed: 02/06/2023] Open
Abstract
We investigated the electrical, optical and mechanical properties of silver (Ag) nanowire (NW) embedded into a silk fibroin (SF) substrate to create high performance, flexible, transparent, biocompatible, and biodegradable heaters for use in wearable electronics. The Ag NW-embedded SF showed a low sheet resistance of 15 Ω sq-1, high optical transmittance of 85.1%, and a small inner/outer critical bending radius of 1 mm. In addition, the Ag NW-embedded SF showed a constant resistance change during repeated bending, folding, and rolling because the connectivity of the Ag NW embedded into the SF substrate was well maintained. Furthermore, the biocompatible and biodegradable Ag NW-embedded SF substrate served as a flexible interconnector for wearable electronics. The high performance of the transparent and flexible heater demonstrated that an Ag NW-embedded SF-based heater can act as a biocompatible and biodegradable substrate for wearable heaters for the human body.
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Affiliation(s)
- Jin-Hyeok Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University 2066, Seobu-ro, Jangan-gu Suwon-si Gyeonggi-do 16419 Republic of Korea
| | - Hae-Jun Seok
- School of Advanced Materials Science and Engineering, Sungkyunkwan University 2066, Seobu-ro, Jangan-gu Suwon-si Gyeonggi-do 16419 Republic of Korea
| | - Eswaran Kamaraj
- Department of Chemistry, Kongju National University 56, Gongjudaehak-ro Gongju-si Chungcheongnam-do 32588 Republic of Korea
| | - Sanghyuk Park
- Department of Chemistry, Kongju National University 56, Gongjudaehak-ro Gongju-si Chungcheongnam-do 32588 Republic of Korea
| | - Han-Ki Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University 2066, Seobu-ro, Jangan-gu Suwon-si Gyeonggi-do 16419 Republic of Korea
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Shen Z, Zhao C, Qi Y, Xu W, Liu Y, Mitrovic IZ, Yang L, Zhao C. Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E1437. [PMID: 32717952 PMCID: PMC7466260 DOI: 10.3390/nano10081437] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 07/15/2020] [Accepted: 07/19/2020] [Indexed: 11/24/2022]
Abstract
Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.
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Affiliation(s)
- Zongjie Shen
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (C.Z.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (C.Z.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Yanfei Qi
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (C.Z.)
- School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710061, China
| | - Wangying Xu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China;
| | - Yina Liu
- Department of Mathematical Sciences, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China;
| | - Ivona Z. Mitrovic
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Li Yang
- Department of Chemistry, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China;
| | - Cezhou Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (C.Z.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
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Zhou Y, Liu D, Wang J, Cheng Z, Liu L, Yang N, Liu Y, Xia T, Liu X, Zhang X, Ye C, Xu Z, Xiong W, Chu PK, Yu XF. Black Phosphorus Based Multicolor Light-Modulated Transparent Memristor with Enhanced Resistive Switching Performance. ACS APPLIED MATERIALS & INTERFACES 2020; 12:25108-25114. [PMID: 32383595 DOI: 10.1021/acsami.0c04493] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Light-modulated transparent memristors combining photoresponse and data storage are promising as multifunctional devices. Herein, a multicolor light-modulated transparent memristor based on black phosphorous (BP) is designed, fabricated, and investigated. BP is a class of emerging two-dimensional (2D) materials with a natural direct band gap and a broad light absorption. Herein, BP nanosheets (BP@PS NSs) coated with polystyrene (PS) are prepared and serve as the resistive switching (RS) layer in the ITO/BP@PS/ITO memristor, which shows >75% transmittance between 350 and 1100 nm. With the aid of PS, the BP@PS-based memristor has excellent RS characteristics such as no initial preforming, low operating voltage, and long retention time. According to the energy band model, the RS mechanism of the high and low resistance states contributes to the transformation from ohmic contact to Schottky contact. During light illumination ranging from ultraviolet (380 nm) to near infrared (785 nm), the Schottky barrier height is elevated further so that the resetting voltages and power consumption decrease. Moreover, the ON/OFF ratios are improved and the maximum enhancement is demonstrated to be more than 10 times. BP is a promising RS material in light-modulated memristors, and the novel device configuration provides insights into the development of multifunctional microelectronic devices based on 2D materials.
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Affiliation(s)
- Yi Zhou
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Danni Liu
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Jiahong Wang
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China
| | - Ziqiang Cheng
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
- Department of Applied Physics, East China Jiaotong University, Nanchang 330013, P. R. China
| | - Lei Liu
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Na Yang
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Yanxin Liu
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Tian Xia
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Xinyi Liu
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Xin Zhang
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Cong Ye
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Zhong Xu
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Wen Xiong
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China
| | - Xue-Feng Yu
- Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
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26
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Wang X, Zhou Z, Ban C, Zhang Z, Ju S, Huang X, Mao H, Chang Q, Yin Y, Song M, Cheng S, Ding Y, Liu Z, Ju R, Xie L, Miao F, Liu J, Huang W. Multifunctional Polymer Memory via Bi-Interfacial Topography for Pressure Perception Recognition. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902864. [PMID: 32328417 PMCID: PMC7175288 DOI: 10.1002/advs.201902864] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2019] [Revised: 12/20/2019] [Indexed: 05/19/2023]
Abstract
Emerging memory devices, that can provide programmable information recording with tunable resistive switching under external stimuli, hold great potential for applications in data storage, logic circuits, and artificial synapses. Realization of multifunctional manipulation within individual memory devices is particularly important in the More-than-Moore era, yet remains a challenge. Here, both rewritable and nonerasable memory are demonstrated in a single stimuli-responsive polymer diode, based on a nanohole-nanowrinkle bi-interfacial structure. Such synergic nanostructure is constructed from interfacing a nanowrinkled bottom graphene electrode and top polymer matrix with nanoholes; and it can be easily prepared by spin coating, which is a low-cost and high-yield production method. Furthermore, the resulting device, with ternary and low-power operation under varied external stimuli, can enable both reversible and irreversible biomimetic pressure recognition memories using a device-to-system framework. This work offers both a general guideline to fabricate multifunctional memory devices via interfacial nanostructure engineering and a smart information storage basis for future artificial intelligence.
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Affiliation(s)
- Xiangjing Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Zhe Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Chaoyi Ban
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Zepu Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Shang Ju
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Xiao Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Huiwu Mao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Qing Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Yuhang Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Mengya Song
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Shuai Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Yamei Ding
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Zhengdong Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Ruolin Ju
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)Nanjing University of Posts & Telecommunications (NUPT)9 Wenyuan RoadNanjing210023China
| | - Linghai Xie
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)Nanjing University of Posts & Telecommunications (NUPT)9 Wenyuan RoadNanjing210023China
| | - Feng Miao
- National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)Nanjing University of Posts & Telecommunications (NUPT)9 Wenyuan RoadNanjing210023China
- Shaanxi Institute of Flexible Electronics (SIFE)Northwestern Polytechnical University (NPU)127 West Youyi RoadXi'an710072China
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27
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Jian M, Zhang Y, Liu Z. Natural Biopolymers for Flexible Sensing and Energy Devices. CHINESE JOURNAL OF POLYMER SCIENCE 2020. [DOI: 10.1007/s10118-020-2379-9] [Citation(s) in RCA: 32] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
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Wang T, Wang M, Yang L, Li Z, Loh XJ, Chen X. Cyber-Physiochemical Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905522. [PMID: 31944425 DOI: 10.1002/adma.201905522] [Citation(s) in RCA: 33] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2019] [Revised: 10/07/2019] [Indexed: 06/10/2023]
Abstract
Living things rely on various physical, chemical, and biological interfaces, e.g., somatosensation, olfactory/gustatory perception, and nervous system response. They help organisms to perceive the world, adapt to their surroundings, and maintain internal and external balance. Interfacial information exchanges are complicated but efficient, delicate but precise, and multimodal but unisonous, which has driven researchers to study the science of such interfaces and develop techniques with potential applications in health monitoring, smart robotics, future wearable devices, and cyber physical/human systems. To understand better the issues in these interfaces, a cyber-physiochemical interface (CPI) that is capable of extracting biophysical and biochemical signals, and closely relating them to electronic, communication, and computing technology, to provide the core for aforementioned applications, is proposed. The scientific and technical progress in CPI is summarized, and the challenges to and strategies for building stable interfaces, including materials, sensor development, system integration, and data processing techniques are discussed. It is hoped that this will result in an unprecedented multi-disciplinary network of scientific collaboration in CPI to explore much uncharted territory for progress, providing technical inspiration-to the development of the next-generation personal healthcare technology, smart sports-technology, adaptive prosthetics and augmentation of human capability, etc.
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Affiliation(s)
- Ting Wang
- Innovative Center for Flexible Devices (iFLEX), Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ming Wang
- Innovative Center for Flexible Devices (iFLEX), Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Le Yang
- Institute of Materials Research and Engineering, Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Zhuyun Li
- Innovative Center for Flexible Devices (iFLEX), Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering, Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Xiaodong Chen
- Innovative Center for Flexible Devices (iFLEX), Max Planck - NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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Abstract
Soft bioelectronics that could be integrated with soft and curvilinear biological tissues/organs have attracted multidisciplinary research interest from material scientists, electronic engineers, and biomedical scientists. Because of their potential human health-related applications, soft bioelectronics require stringent demands for biocompatible components. Silk, as a kind of well-known ancient natural biopolymer, shows unique combined merits such as good biocompatibility, programmable biodegradability, processability into various material formats, and large-scale sustainable production. Such unique merits have made silk popular for intensive design and study in soft bioelectronics over the past decade. Due to the development of fabrication techniques in material processing and progress in research, silk has been engineered into a variety of advanced materials including silk fibers/textiles, nanofibers, films, hydrogels, and aerogels. Natural and regenerated silk materials can also be transformed into intrinsically nitrogen-doped and electrically conductive carbon materials, due to their unique molecular structure and high nitrogen content. The rich morphologies and varied processing options for silk materials can furnish transformed carbon materials with well-designed structures and properties. The favorable and unique material merits of silk materials and silk-derived carbon materials offer potential applications in soft electronics. Based on commercial silk fibers/textiles and the availability of re-engineered silk materials with versatile technological formats, functional soft electronics have been explored with silk as flexible biosupports/biomatrixes or active components. These soft systems include bioresorbable electronics, ultraconformal bioelectronics, transient electronics, epidermal electronics, textile electronics, conformal biosensors, flexible transistors, and resistive switching memory devices. Silk-derived carbon materials with rationally designed morphologies and structures have also been developed as active components for wearable sensors, electronic skins, and flexible energy devices, which provide novel concepts and opportunities for soft electronics. In this Account, we highlight the unique hierarchical and chemical structure of natural silk fibers, the fabrication strategies for processing silk into materials with versatile morphologies and into electrically conductive carbon materials, as well as recent progress in the development of silk-based advanced materials (silk materials and silk-derived carbon materials) for soft bioelectronics. The design and functionality of soft electronics developed with commercial silk fibers/textiles, re-engineered silk materials, and silk-derived carbon materials as biosubstrate/matrix and active components is introduced in detail. We further discuss future challenges and prospects for developing silk-based soft bioelectronics for wearable healthcare systems. By leveraging the unique advantages of silk-based advanced materials, the design and construction strategy for flexible electronics, as well as the potential of flexible electronics for conformable and intimate association with human tissues/organs, silk-based soft bioelectronics should have a significant impact on diverse healthcare fields.
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Affiliation(s)
- Chunya Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, P. R. China
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, Massachusetts 02155, United States
| | - Kailun Xia
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, P. R. China
| | - Yingying Zhang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, P. R. China
| | - David L. Kaplan
- Department of Biomedical Engineering, Tufts University, 4 Colby Street, Medford, Massachusetts 02155, United States
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Abstract
Gold, one of the noble metals, has played a significant role in human society throughout history. Gold's excellent electrical, optical and chemical properties make the element indispensable in maintaining a prosperous modern electronics industry. In the emerging field of stretchable electronics (elastronics), the main challenge is how to utilize these excellent material properties under various mechanical deformations. This review covers the recent progress in developing "softening" gold chemistry for various applications in elastronics. We systematically present material synthesis and design principles, applications, and challenges and opportunities ahead.
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Affiliation(s)
- Bowen Zhu
- Department of Chemical Engineering, Monash University, Clayton, Victoria 3800, Australia.
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31
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Wang TY, Meng JL, He ZY, Chen L, Zhu H, Sun QQ, Ding SJ, Zhang DW. Atomic Layer Deposited Hf 0.5Zr 0.5O 2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity. NANOSCALE RESEARCH LETTERS 2019; 14:102. [PMID: 30877593 PMCID: PMC6420527 DOI: 10.1186/s11671-019-2933-y] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2018] [Accepted: 03/08/2019] [Indexed: 05/23/2023]
Abstract
Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems.
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Affiliation(s)
- Tian-Yu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Jia-Lin Meng
- Frontier Science Center for Synthetic Biology and Key Laboratory of Systems Bioengineering (MOE), and School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072 China
| | - Zhen-Yu He
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Qing-Qing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - Shi-Jin Ding
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433 China
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Wang Z, Gao W, Zhang Q, Zheng K, Xu J, Xu W, Shang E, Jiang J, Zhang J, Liu Y. 3D-Printed Graphene/Polydimethylsiloxane Composites for Stretchable and Strain-Insensitive Temperature Sensors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:1344-1352. [PMID: 30523681 DOI: 10.1021/acsami.8b16139] [Citation(s) in RCA: 58] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Materials possessing exceptional temperature sensitivity and high stretchability are of importance for real-time temperature monitoring on three-dimensional components with complex geometries, when operating under various external deformation modes. Herein, we develop a stretchable temperature sensor consisting of cellular graphene/polydimethylsiloxane composite. The first of its kind, graphene-based polymer composites with desired microstructures are produced through a direct 3D ink-writing technique. The resultant composites possess long-range-ordered and precisely controlled cellular structure. Temperature-sensing properties of three cellular structures, including grid, triangular, and hexagonal porous structures are studied. It is found that all three cellular composites present more stable sensitivities than solid composites under external strains because of the fine porous structure that can effectively share the external strain, and the composites with a grid structure delivered particularly a stable sensing performance, showing only ∼15% sensitivity decrease at a large tensile strain of 20%. Taking full advantage of the composites with a grid structure in terms of sensitivity, durability, and stability, practical applications of the composite are demonstrated to monitor the cooling process of a heated tube and measure skin temperature accompanying an arbitrary wristwork.
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Affiliation(s)
| | | | | | | | | | | | | | - Jing Jiang
- Department of Electrical and Computer Engineering , Western University , London N6A 3K7 , Canada
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33
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Qi Q, Li Y, Qiu W, Zhang W, Shi C, Hou C, Yan W, Huang J, Yang L, Wang H, Guo W, Liu XY, Lin N. Transient bioelectrical devices inspired by a silkworm moth breaking out of its cocoon. RSC Adv 2019; 9:14254-14259. [PMID: 35519322 PMCID: PMC9064003 DOI: 10.1039/c9ra02147g] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2019] [Accepted: 04/29/2019] [Indexed: 11/21/2022] Open
Abstract
Transient devices have attracted extensive interest because they allow changes in physical form and device function under the control of external stimuli or related commands and have very broad application prospects for information security, biomedical care and the environment. Transient bioelectrical devices were fabricated inspired by a silkworm moth breaking out of its cocoon, which has shown many advantages, including the use of mild stimulation, biocompatible materials, a simple process, and a universal strategy. For the fabrication of the transient devices, heat-sensitive microspheres with a 9.3 mol L−1 LiBr solution in wax shells were prepared by microfluidic technology, which were then assembled into silk fibroin (SF) electronic materials/devices, such as SF conductive film, an LED circuit on SF film, and a Ag/SF film/Pt/SF film memristor. The contribution from the LiBr/wax microspheres to the transient time of the SF films upon exposure to heat was quantitatively investigated. This approach was applied to transiently dissolve a flexible Ag-nanowire resistance circuit line on a SF substrate. Moreover, memristors constructed with a functional layer of SF were destroyed by melting the LiBr/wax microspheres. This technique paves the way for realizing transient bioelectrical devices inspired by biological behavior, which have been well optimized by nature via evolution. Silk fibroin-based transient devices were developed using LiBr/wax microspheres that mimic a silk cocoon protecting silkworm pupa and a juvenile moth secreting an enzyme to dissolve silk sericin and break a silk cocoon.![]()
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Xu J, Zhao X, Wang Z, Xu H, Hu J, Ma J, Liu Y. Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1803970. [PMID: 30500108 DOI: 10.1002/smll.201803970] [Citation(s) in RCA: 38] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2018] [Revised: 11/09/2018] [Indexed: 05/05/2023]
Abstract
Transient electronics that can physically vanish in solution can offer opportunities to address the ecological challenges for dealing with the rapidly growing electronic waste. As one important component, it is desirable that memory devices combined with the transient feature can also be developed as secrecy information storage systems besides the above advantage. Resistive switching (RS) memory is one of the most promising technologies for next-generation memory. Herein, the biocompatible pectin extracted from natural orange peel is introduced to fabricate RS memory devices (Ag/pectin/indium tin oxides (ITO)), which exhibit excellent RS characteristics, such as forming free characteristic, low operating voltages (≈1.1 V), fast switching speed (<70 ns), long retention time (>104 s), and multilevel RS behaviors. The device performance is not degraded after 104 bending cycles, which will be beneficial for flexible memory applications. Additionally, instead of using acid solution, the Ag/pectin/ITO memory device can be dissolved rapidly in deionized water within 10 min thanks to the good solubility arising from ionization of its carboxylic groups, which shows promising application for green electronics. The present biocompatible memory devices based on natural pectin suggest promising material candidates toward enabling high-density secure information storage systems applications, flexible electronics, and green electronics.
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Affiliation(s)
- Jiaqi Xu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Junli Hu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jiangang Ma
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
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Guo B, Sun B, Hou W, Chen Y, Zhu S, Mao S, Zheng L, Lei M, Li B, Fu G. A sustainable resistive switching memory device based on organic keratin extracted from hair. RSC Adv 2019; 9:12436-12440. [PMID: 35515851 PMCID: PMC9063690 DOI: 10.1039/c8ra10643f] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2018] [Accepted: 03/26/2019] [Indexed: 11/21/2022] Open
Abstract
It is the consensus of researchers that the reuse of natural resources is an effective way to solve the problems of environmental pollution, waste and overcapacity. Moreover, compared with the case of inorganic materials, the renewability of natural biomaterials has great prominent advantages. In this study, keratin, which was first extracted from hair due to its high content in hair, was chosen as a functional layer for the fabrication of a resistance switching device with the Ag/keratin/ITO structure; in this device, a stable resistive switching memory behavior with good retention characteristic was observed. Via mechanism analysis, it is expected that there is hopping conduction at low biases, and the formation of a conductive filament occurs at high biases. Furthermore, our device exhibited a stable switching behavior with different conductive materials (Ti and FTO) as bottom electrodes, and the influence of Ag and graphite conductive nanoparticles (NPs) doped into the keratin layer on the switching performance of the device was also investigated. This study not only suggests that keratin is a potential biomaterial for the preparation of memory devices, but also provides a promising route for the fabrication of bio-electronic devices with non-toxicity, degradability, sustainability etc. This study suggests that keratin is a potential biomaterial for the preparation of memory devices with non-toxicity, degradability and sustainability.![]()
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Dang B, Wu Q, Song F, Sun J, Yang M, Ma X, Wang H, Hao Y. A bio-inspired physically transient/biodegradable synapse for security neuromorphic computing based on memristors. NANOSCALE 2018; 10:20089-20095. [PMID: 30357252 DOI: 10.1039/c8nr07442a] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Physically transient electronic devices that can disappear on demand have great application prospects in the field of information security, implantable biomedical systems, and environment friendly electronics. On the other hand, the memristor-based artificial synapse is a promising candidate for new generation neuromorphic computing systems in artificial intelligence applications. Therefore, a physically transient synapse based on memristors is highly desirable for security neuromorphic computing and bio-integrated systems. Here, this is the first presentation of fully degradable biomimetic synaptic devices based on a W/MgO/ZnO/Mo memristor on a silk protein substrate, which show remarkable information storage and synaptic characteristics including long-term potentiation (LTP), long-term depression (LTD) and spike timing dependent plasticity (STDP) behaviors. Moreover, to emulate the apoptotic process of biological neurons, the transient synapse devices can be dissolved completely in phosphate-buffered saline solution (PBS) or deionized (DI) water in 7 min. This work opens the route to security neuromorphic computing for smart security and defense electronic systems, as well as for neuro-medicine and implantable electronic systems.
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Affiliation(s)
- Bingjie Dang
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
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Lv Z, Wang Y, Chen Z, Sun L, Wang J, Chen M, Xu Z, Liao Q, Zhou L, Chen X, Li J, Zhou K, Zhou Y, Zeng Y, Han S, Roy VAL. Phototunable Biomemory Based on Light-Mediated Charge Trap. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1800714. [PMID: 30250806 PMCID: PMC6145401 DOI: 10.1002/advs.201800714] [Citation(s) in RCA: 51] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2018] [Indexed: 05/19/2023]
Abstract
Phototunable biomaterial-based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)-silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and scanning electron microscopy and energy-dispersive spectroscopy microanalysis, which demonstrates that the resistive switching behavior of Al, Au anode-based device are related to the space-charge-limited-conduction, while electrochemical metallization is the main mechanism for resistive transitions of Ag anode-based devices. Incorporation of CDs with light-adjustable charge trapping capacity is found to be responsible for phototunable resistive switching properties of CDs-based resistive random access memory by performing the ultraviolet light illumination studies on as-fabricated devices. The synergistic effect of photovoltaics and photogating can effectively enhance the internal electrical field to reduce the switching voltage. This demonstration provides a practical route for next-generation biocompatible electronics.
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Affiliation(s)
- Ziyu Lv
- College of Electronic Science and TechnologyShenzhen UniversityShenzhen518060P. R. China
- Department of Materials Science and Engineering and State Key Laboratory of Millimeter WavesCity University of Hong KongTat Chee Avenue, KowloonHong Kong SAR999077China
| | - Yan Wang
- College of Electronic Science and TechnologyShenzhen UniversityShenzhen518060P. R. China
| | - Zhonghui Chen
- State Key Laboratory of Advanced Technology for Materials Synthesis and ProcessingWuhan University of Technology122 Luoshi RoadWuhan430070P. R. China
| | - Long Sun
- State Key Laboratory of Transducer TechnologyShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai200050China
| | - Junjie Wang
- College of Electronic Science and TechnologyShenzhen UniversityShenzhen518060P. R. China
| | - Meng Chen
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Zhenting Xu
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Qiufan Liao
- College of Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Li Zhou
- College of Electronic Science and TechnologyShenzhen UniversityShenzhen518060P. R. China
| | - Xiaoli Chen
- College of Electronic Science and TechnologyShenzhen UniversityShenzhen518060P. R. China
| | - Jieni Li
- College of Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Kui Zhou
- College of Electronic Science and TechnologyShenzhen UniversityShenzhen518060P. R. China
| | - Ye Zhou
- Institute for Advanced StudyShenzhen UniversityShenzhen518060P. R. China
| | - Yu‐Jia Zeng
- College of Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Su‐Ting Han
- College of Electronic Science and TechnologyShenzhen UniversityShenzhen518060P. R. China
| | - Vellaisamy A. L. Roy
- Department of Materials Science and Engineering and State Key Laboratory of Millimeter WavesCity University of Hong KongTat Chee Avenue, KowloonHong Kong SAR999077China
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Sun J, Wang H, Song F, Wang Z, Dang B, Yang M, Gao H, Ma X, Hao Y. Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800945. [PMID: 29806233 DOI: 10.1002/smll.201800945] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2018] [Revised: 04/23/2018] [Indexed: 06/08/2023]
Abstract
Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high-density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 107 , steep turn-on slope of <8 mV dec-1 , and fast ON/OFF switch speed within 50/25 ns. Triggered failure could be achieved after soaking the device in deionized water for 8 min at room temperature. Furthermore, a water-assisted transfer printing method is used to fabricate flexible and transient TS device arrays for bioresorbable systems, in which none of any significant degradation is observed under a bending radius of 2 mm. Integrating the selector with a transient memristor is capable of 107 Gb memory implementation, indicating that the transient TS device could provide great opportunities to achieve highly integrated transient memory arrays.
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Affiliation(s)
- Jing Sun
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Hong Wang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Fang Song
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Zhan Wang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Bingjie Dang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Mei Yang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Haixia Gao
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
- School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Xiaohua Ma
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Yue Hao
- Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
- School of Microelectronics, Xidian University, Xi'an, 710071, China
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39
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Koh LD, Yeo J, Lee YY, Ong Q, Han M, Tee BCK. Advancing the frontiers of silk fibroin protein-based materials for futuristic electronics and clinical wound-healing (Invited review). MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2018. [DOI: 10.1016/j.msec.2018.01.007] [Citation(s) in RCA: 57] [Impact Index Per Article: 8.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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40
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Li B, Liu Y, Wan C, Liu Z, Wang M, Qi D, Yu J, Cai P, Xiao M, Zeng Y, Chen X. Mediating Short-Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706395. [PMID: 29544021 DOI: 10.1002/adma.201706395] [Citation(s) in RCA: 45] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2017] [Revised: 01/23/2018] [Indexed: 06/08/2023]
Abstract
Memristive synapses based on resistive switching are promising electronic devices that emulate the synaptic plasticity in neural systems. Short-term plasticity (STP), reflecting a temporal strengthening of the synaptic connection, allows artificial synapses to perform critical computational functions, such as fast response and information filtering. To mediate this fundamental property in memristive electronic devices, the regulation of the dynamic resistive change is necessary for an artificial synapse. Here, it is demonstrated that the orientation of mesopores in the dielectric silica layer can be used to modulate the STP of an artificial memristive synapse. The dielectric silica layer with vertical mesopores can facilitate the formation of a conductive pathway, which underlies a lower set voltage (≈1.0 V) compared to these with parallel mesopores (≈1.2 V) and dense amorphous silica (≈2.0 V). Also, the artificial memristive synapses with vertical mesopores exhibit the fastest current increase by successive voltage pulses. Finally, oriented silica mesopores are designed for varying the relaxation time of memory, and thus the successful mediation of STP is achieved. The implementation of mesoporous orientation provides a new perspective for engineering artificial synapses with multilevel learning and forgetting capability, which is essential for neuromorphic computing.
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Affiliation(s)
- Bin Li
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Yaqing Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Changjin Wan
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zhiyuan Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ming Wang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Dianpeng Qi
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jiancan Yu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Pingqiang Cai
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Meng Xiao
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Yi Zeng
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xiaodong Chen
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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41
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Wu Q, Wang H, Luo Q, Banerjee W, Cao J, Zhang X, Wu F, Liu Q, Li L, Liu M. Full imitation of synaptic metaplasticity based on memristor devices. NANOSCALE 2018; 10:5875-5881. [PMID: 29508884 DOI: 10.1039/c8nr00222c] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Neuromorphic engineering is a promising technology for developing new computing systems owing to the low-power operation and the massive parallelism similarity to the human brain. Optimal function of neuronal networks requires interplay between rapid forms of Hebbian plasticity and homeostatic mechanisms that adjust the threshold for plasticity, termed metaplasticity. Metaplasticity has important implications in synapses and is barely addressed in neuromorphic devices. An understanding of metaplasticity might yield new insights into how the modification of synapses is regulated and how information is stored by synapses in the brain. Here, we propose a method to imitate the metaplasticity inhibition of long-term potentiation (MILTP) for the first time based on memristors. In addition, the metaplasticity facilitation of long-term potentiation (MFLTP) and the metaplasticity facilitation of long-term depression (MFLTD) are also achieved. Moreover, the mechanisms of metaplasticity in memristors are discussed. Additionally, the proposed method to mimic the metaplasticity is verified by three different memristor devices including oxide-based resistive memory (OxRAM), interface switching random access memory, and conductive bridging random access memory (CBRAM). This is a further step toward developing fully bio-realistic artificial synapses using memristors. The findings in this study will deepen our understanding of metaplasticity, as well as provide new insight into bio-realistic neuromorphic engineering.
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Affiliation(s)
- Quantan Wu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China.
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Kim MK, Lee JS. Ultralow Power Consumption Flexible Biomemristors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:10280-10286. [PMID: 29464944 DOI: 10.1021/acsami.8b01781] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Low power consumption is the important requirement in memory devices for saving energy. In particular, improved energy efficiency is essential in implantable electronic devices for operation under a limited power supply. Here, we demonstrate the use of κ-carrageenan (κ-car) as the resistive switching layer to achieve memory that has low power consumption. A carboxymethyl (CM) group is introduced to the κ-car to increase its ionic conductivity. Ag was doped in CM:κ-car to improve the resistive switching properties of the devices. Memory devices based on Ag-doped CM:κ-car showed electroforming-free resistive switching. This device exhibited low reset voltage (∼0.05 V), fast switching speed (50 ns), and high on/off ratio (>103) under low compliance current (10-5 A). Its power consumption (∼0.35 μW) is much lower than those of the previously reported biomemristors. The resistive switching may be a result of an electrochemical redox process and Ag filament formation in the CM:κ-car under an electric field. This biopolymer memory can also be fabricated on flexible substrate. This study verifies the feasibility of using biopolymers for applications to future implantable and biocompatible nanoelectronics.
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Affiliation(s)
- Min-Kyu Kim
- Department of Materials Science and Engineering , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
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43
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Moudgil A, Kalyani N, Sinsinbar G, Das S, Mishra P. S-Layer Protein for Resistive Switching and Flexible Nonvolatile Memory Device. ACS APPLIED MATERIALS & INTERFACES 2018; 10:4866-4873. [PMID: 29308639 DOI: 10.1021/acsami.7b15062] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In this work, a flexible resistive switching memory device consisting of S-layer protein (Slp) is demonstrated for the first time. This novel device (Al/Slp/indium tin oxide/polyethylene terephthalte) based on a simple and easy fabrication method is capable of bistable switching to low resistive state (LRS) and high resistive state (HRS). This device exhibits bistable memory behavior with stability and a long retention time (>4 × 103 s), being stable up to a 500 cycle endurance test and with significant HRS/LRS ratio. The device possesses consistent switching performance for more than 100 times bending, corresponding to desired applicability for biocompatible wearable electronics. The memory mechanism is attributed to a trapping/de-trapping process in S-layer protein. These promising results of the flexible memory device could find a way in the wearable storage applications like smart bands and sports equipments' sensors.
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Affiliation(s)
- Akshay Moudgil
- Centre for Applied Research in Electronics and ‡Department of Biochemical Engineering and Biotechnology, Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016, India
| | - Neeti Kalyani
- Centre for Applied Research in Electronics and ‡Department of Biochemical Engineering and Biotechnology, Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016, India
| | - Gaurav Sinsinbar
- Centre for Applied Research in Electronics and ‡Department of Biochemical Engineering and Biotechnology, Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016, India
| | - Samaresh Das
- Centre for Applied Research in Electronics and ‡Department of Biochemical Engineering and Biotechnology, Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016, India
| | - Prashant Mishra
- Centre for Applied Research in Electronics and ‡Department of Biochemical Engineering and Biotechnology, Indian Institute of Technology Delhi , Hauz Khas, New Delhi 110016, India
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Herbert R, Kim JH, Kim YS, Lee HM, Yeo WH. Soft Material-Enabled, Flexible Hybrid Electronics for Medicine, Healthcare, and Human-Machine Interfaces. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E187. [PMID: 29364861 PMCID: PMC5848884 DOI: 10.3390/ma11020187] [Citation(s) in RCA: 86] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/05/2018] [Revised: 01/20/2018] [Accepted: 01/23/2018] [Indexed: 12/20/2022]
Abstract
Flexible hybrid electronics (FHE), designed in wearable and implantable configurations, have enormous applications in advanced healthcare, rapid disease diagnostics, and persistent human-machine interfaces. Soft, contoured geometries and time-dynamic deformation of the targeted tissues require high flexibility and stretchability of the integrated bioelectronics. Recent progress in developing and engineering soft materials has provided a unique opportunity to design various types of mechanically compliant and deformable systems. Here, we summarize the required properties of soft materials and their characteristics for configuring sensing and substrate components in wearable and implantable devices and systems. Details of functionality and sensitivity of the recently developed FHE are discussed with the application areas in medicine, healthcare, and machine interactions. This review concludes with a discussion on limitations of current materials, key requirements for next generation materials, and new application areas.
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Affiliation(s)
- Robert Herbert
- George W. Woodruff School of Mechanical Engineering, College of Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Jong-Hoon Kim
- School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686, USA.
| | - Yun Soung Kim
- George W. Woodruff School of Mechanical Engineering, College of Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Hye Moon Lee
- Functional Materials Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Seongsan-gu, Changwon, Gyeongnam 641-831, Korea.
| | - Woon-Hong Yeo
- George W. Woodruff School of Mechanical Engineering, College of Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
- Center for Flexible Electronics, Institute for Electronics and Nanotechnology, Bioengineering Program, Petit Institute for Bioengineering and Biosciences, Neural Engineering Center, Georgia Institute of Technology, Atlanta, GA 30332, USA.
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45
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Huang XW, Liang H, Li Z, Zhou J, Chen X, Bai SM, Yang HH. Monodisperse phase transfer and surface bioengineering of metal nanoparticles via a silk fibroin protein corona. NANOSCALE 2017; 9:2695-2700. [PMID: 28186214 DOI: 10.1039/c6nr09581j] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Uniform hydrophobic nanoparticles synthesized in nonpolar solvents possess excellent physio-chemical properties, showing great potential in biomedical applications. However, the presence of hydrophobic ligands on their surfaces limits their use under physiological conditions. Inspired by protein coronas present at the nano-bio interface, here we report a facile and universal method for phase transfer and surface bioengineering of hydrophobic nanoparticles using β-sheet-rich silk fibroin, a FDA-approved natural protein. Due to its amphiphilicity and high mechanical stiffness, the β-sheet-rich silk fibroin not only readily drags nanoparticles from an organic phase into aqueous media but also endows them with excellent monodispersity and long-term stability. The silk fibroin-coated nanoparticles can retain the magnetic and optical properties of the original nanoparticles, acting effectively as probes for biomedical imaging and biosensing. Furthermore, hydrophobic drugs can be easily adsorbed onto the protein coating via hydrophobic interaction, allowing the construction of promising theranostic nanoagents. Given these unique features, the strategy developed here possesses great promise in facilitating biomedical applications of hydrophobic nanomaterials.
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Affiliation(s)
- Xiao-Wei Huang
- The Key Lab of Analysis and Detection Technology for Food Safety of the MOE, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou 350108, P. R. China.
| | - Hong Liang
- The Key Lab of Analysis and Detection Technology for Food Safety of the MOE, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou 350108, P. R. China.
| | - Zhi Li
- The Key Lab of Analysis and Detection Technology for Food Safety of the MOE, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou 350108, P. R. China.
| | - Jie Zhou
- College of Biological Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China.
| | - Xian Chen
- The Key Lab of Analysis and Detection Technology for Food Safety of the MOE, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou 350108, P. R. China.
| | - Shu-Meng Bai
- College of Biological Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China.
| | - Huang-Hao Yang
- The Key Lab of Analysis and Detection Technology for Food Safety of the MOE, State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou 350108, P. R. China.
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46
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Park Y, Lee JS. Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2017; 9:6207-6212. [PMID: 28078883 DOI: 10.1021/acsami.6b14566] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The growing interest in bioinspired and sustainable electronics has induced research on biocompatible and biodegradable materials. However, conventional electronic devices have been restricted due to their nonbiodegradable and sometimes harmful and toxic materials, which can even cause environmental issues. Here, we report a resistive switching random access memory (ReRAM) device based on lignin, which is a biodegradable waste product of the paper industry. The active layer of the device can be easily formed using a simple solution process on a plastic substrate. The memory devices show stable bipolar resistive switching behavior with good endurance and retention. Appropriate control of the maximum reset voltage and compliance current can yield multibit data storage capability with at least four resistance states, which can be exploited to realize a high-density memory device. The resistive switching mechanism may be a result of formation and rupture of carbon-rich filaments. These results suggest that lignin is a promising candidate material for an inexpensive and environmentally benign ReRAM device. We believe that this study can initiate a new route toward development of biocompatible and flexible electronics.
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Affiliation(s)
- Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, Republic of Korea
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47
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Zhu JX, Zhou W, Wang ZQ, Xu HY, Lin Y, Liu WZ, Ma JG, Liu YC. Flexible, transferable and conformal egg albumen based resistive switching memory devices. RSC Adv 2017. [DOI: 10.1039/c7ra05237e] [Citation(s) in RCA: 36] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Egg albumen based RRAM devices transferred onto nonconventional substrates demonstrate flexible and conformal applications.
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Affiliation(s)
- J. X. Zhu
- Centre for Advanced Optoelectronic Functional Materials Research
- Key Laboratory for UV Light-Emitting Materials and Technology
- Northeast Normal University
- Ministry of Education
- Changchun
| | - W. L. Zhou
- Department of Pediatrics
- The First Hospital of Jilin University
- Changchun
- China
| | - Z. Q. Wang
- Centre for Advanced Optoelectronic Functional Materials Research
- Key Laboratory for UV Light-Emitting Materials and Technology
- Northeast Normal University
- Ministry of Education
- Changchun
| | - H. Y. Xu
- Centre for Advanced Optoelectronic Functional Materials Research
- Key Laboratory for UV Light-Emitting Materials and Technology
- Northeast Normal University
- Ministry of Education
- Changchun
| | - Y. Lin
- Centre for Advanced Optoelectronic Functional Materials Research
- Key Laboratory for UV Light-Emitting Materials and Technology
- Northeast Normal University
- Ministry of Education
- Changchun
| | - W. Z. Liu
- Centre for Advanced Optoelectronic Functional Materials Research
- Key Laboratory for UV Light-Emitting Materials and Technology
- Northeast Normal University
- Ministry of Education
- Changchun
| | - J. G. Ma
- Centre for Advanced Optoelectronic Functional Materials Research
- Key Laboratory for UV Light-Emitting Materials and Technology
- Northeast Normal University
- Ministry of Education
- Changchun
| | - Y. C. Liu
- Centre for Advanced Optoelectronic Functional Materials Research
- Key Laboratory for UV Light-Emitting Materials and Technology
- Northeast Normal University
- Ministry of Education
- Changchun
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Zhuang X, Huang W, Yang X, Han S, Li L, Yu J. Biocompatible/Degradable Silk Fibroin:Poly(Vinyl Alcohol)-Blended Dielectric Layer Towards High-Performance Organic Field-Effect Transistor. NANOSCALE RESEARCH LETTERS 2016; 11:439. [PMID: 27709560 PMCID: PMC5052155 DOI: 10.1186/s11671-016-1660-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2016] [Accepted: 09/26/2016] [Indexed: 05/22/2023]
Abstract
Biocompatible silk fibroin (SF):poly(vinyl alcohol) (PVA) blends were prepared as the dielectric layers of organic field-effect transistors (OFETs). Compared with those with pure SF dielectric layer, an optimal threshold voltage of ~0 V, high on/off ratio of ~104, and enhanced field-effect mobility of 0.22 cm2/Vs of OFETs were obtained by carefully controlling the weight ratio of SF:PVA blends to 7:5. Through the morphology characterization of dielectrics and organic semiconductors by utilizing atom force microscopy and electrical characterization of the devices, the performance improvement of OFETs with SF:PVA hybrid gate dielectric layers were attributed to the smooth and homogeneous morphology of blend dielectrics. Furthermore, due to lower charge carrier trap density, the OFETs based on SF:PVA-blended dielectric exhibited a higher bias stability than those based on pure SF dielectric.
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Affiliation(s)
- Xinming Zhuang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
| | - Wei Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
- Department of Chemistry and the Materials Research Center Northwestern University, 2145, Sheridan Road, Evanston, IL 60208 USA
| | - Xin Yang
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing, 402160 China
| | - Shijiao Han
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
| | - Lu Li
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing, 402160 China
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054 China
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing, 402160 China
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