2
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Toliopoulos D, Khoury M, Bouabdellaoui M, Granchi N, Claude JB, Benali A, Berbezier I, Hannani D, Ronda A, Wenger J, Bollani M, Gurioli M, Sanguinetti S, Intonti F, Abbarchi M. Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances. OPTICS EXPRESS 2020; 28:37734-37742. [PMID: 33379602 DOI: 10.1364/oe.409001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Accepted: 10/18/2020] [Indexed: 06/12/2023]
Abstract
We use low-resolution optical lithography joined with solid state dewetting of crystalline, ultra-thin silicon on insulator (c-UT-SOI) to form monocrystalline, atomically smooth, silicon-based Mie resonators in well-controlled large periodic arrays. The dewetted islands have a typical size in the 100 nm range, about one order of magnitude smaller than the etching resolution. Exploiting a 2 µm thick SiO2 layer separating the islands and the underlying bulk silicon wafer, we combine the resonant modes of the antennas with the etalon effect. This approach sets the resonance spectral position and improves the structural colorization and the contrast between scattering maxima and minima of individual resonant antennas. Our results demonstrate that templated dewetting enables the formation of defect-free, faceted islands that are much smaller than the nominal etching resolution and that an appropriate engineering of the substrate improves their scattering properties. These results are relevant to applications in spectral filtering, structural color and beam steering with all-dielectric photonic devices.
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3
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Han W, Zhao K, Pan C, Yuan Y, Zhao Y, Cheng Z, Wang M. Fabrication of Ge 2Sb 2Te 5 crystal micro/nanostructures through single-shot Gaussian-shape femtosecond laser pulse irradiation. OPTICS EXPRESS 2020; 28:25250-25262. [PMID: 32907050 DOI: 10.1364/oe.394093] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2020] [Accepted: 07/28/2020] [Indexed: 06/11/2023]
Abstract
Femtosecond (fs) laser-thin film interaction is one of the most practical methods for fabricating functional nanostructures. However, the details of the interaction mechanism remain unclear. In this study, we demonstrate an abnormal ablation effect on nanofilms by using a tightly focused single fs laser pulse. After the irradiation of a single Gaussian-shaped femtosecond laser pulse, a molten micro/nanopatch at the irradiated central high-power zone is isolated from the surrounding film. The confined localized threshold effect is proposed as the main mechanism for the phase isolation. With this effect, the high refractive index dielectric Ge2Sb2Te5 crystal nanostructures can be fabricated by directed dewetting of the isolated molten micro/nanopatch on Si substrates. After the laser irradiation, the central isolated liquid through an amorphous GST film is transformed into a crystalline state after resolidification. The isolated central micro/nanopatch size can be controlled by the focused spot size and pulse energy, so that the morphologies (size, geometrical morphology, and distribution) of GST nanostructures can be flexibly modulated. Furthermore, separated solid and liquid phase states detected using spatial-temporal-resolved microscopy validates the crucial role of the confined-localized threshold effect in the dewetting effect based on the separated liquid phase.
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4
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Berzinš J, Indrišiūnas S, van Erve K, Nagarajan A, Fasold S, Steinert M, Gerini G, Gečys P, Pertsch T, Bäumer SMB, Setzpfandt F. Direct and High-Throughput Fabrication of Mie-Resonant Metasurfaces via Single-Pulse Laser Interference. ACS NANO 2020; 14:6138-6149. [PMID: 32310637 DOI: 10.1021/acsnano.0c01993] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
High-index dielectric metasurfaces featuring Mie-type electric and magnetic resonances have been of great interest in a variety of applications such as imaging, sensing, photovoltaics, and others, which led to the necessity of an efficient large-scale fabrication technique. To address this, here we demonstrate the use of single-pulse laser interference for direct patterning of an amorphous silicon film into an array of Mie resonators a few hundred nanometers in diameter. The proposed technique is based on laser-interference-induced dewetting. A precise control of the laser pulse energy enables the fabrication of ordered dielectric metasurfaces in areas spanning tens of micrometers and consisting of thousands of hemispherical nanoparticles with a single laser shot. The fabricated nanoparticles exhibit a wavelength-dependent optical response with a strong electric dipole signature. Variation of the predeposited silicon film thickness allows tailoring of the resonances in the targeted visible and infrared spectral ranges. Such direct and high-throughput fabrication is a step toward a simple realization of spatially invariant metasurface-based devices.
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Affiliation(s)
- Jonas Berzinš
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany
- Optics Department, Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628CK Delft, The Netherlands
| | - Simonas Indrišiūnas
- Department of Laser Technologies, Center for Physical Sciences and Technology, Savanoriu Avenue 231, LT-02300 Vilnius, Lithuania
| | - Koen van Erve
- Optics Department, Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628CK Delft, The Netherlands
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Arvind Nagarajan
- Optics Department, Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628CK Delft, The Netherlands
- Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Stefan Fasold
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany
| | - Michael Steinert
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany
| | - Giampiero Gerini
- Optics Department, Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628CK Delft, The Netherlands
- Department of Electrical Engineering, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Paulius Gečys
- Department of Laser Technologies, Center for Physical Sciences and Technology, Savanoriu Avenue 231, LT-02300 Vilnius, Lithuania
| | - Thomas Pertsch
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Straße 7, 07745 Jena, Germany
| | - Stefan M B Bäumer
- Optics Department, Netherlands Organization for Applied Scientific Research (TNO), Stieltjesweg 1, 2628CK Delft, The Netherlands
| | - Frank Setzpfandt
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany
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5
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Berzinš J, Indrišiūnas S, Fasold S, Steinert M, Žukovskaja O, Cialla-May D, Gečys P, Bäumer SMB, Pertsch T, Setzpfandt F. Laser-induced spatially-selective tailoring of high-index dielectric metasurfaces. OPTICS EXPRESS 2020; 28:1539-1553. [PMID: 32121862 DOI: 10.1364/oe.380383] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2019] [Accepted: 12/10/2019] [Indexed: 06/10/2023]
Abstract
Optically resonant high-index dielectric metasurfaces featuring Mie-type electric and magnetic resonances are usually fabricated by means of planar technologies, which limit the degrees of freedom in tunability and scalability of the fabricated systems. Therefore, we propose a complimentary post-processing technique based on ultrashort (≤ 10 ps) laser pulses. The process involves thermal effects: crystallization and reshaping, while the heat is localized by a high-precision positioning of the focused laser beam. Moreover, for the first time, the resonant behavior of dielectric metasurface elements is exploited to engineer a specific absorption profile, which leads to a spatially-selective heating and a customized modification. Such technique has the potential to reduce the complexity in the fabrication of non-uniform metasurface-based optical elements. Two distinct cases, a spatial pixelation of a large-scale metasurface and a height modification of metasurface elements, are explicitly demonstrated.
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6
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Bollani M, Salvalaglio M, Benali A, Bouabdellaoui M, Naffouti M, Lodari M, Corato SD, Fedorov A, Voigt A, Fraj I, Favre L, Claude JB, Grosso D, Nicotra G, Mio A, Ronda A, Berbezier I, Abbarchi M. Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits. Nat Commun 2019; 10:5632. [PMID: 31822679 PMCID: PMC6904683 DOI: 10.1038/s41467-019-13371-3] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2019] [Accepted: 11/06/2019] [Indexed: 11/09/2022] Open
Abstract
Large-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of \documentclass[12pt]{minimal}
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\begin{document}$$\sim$$\end{document}~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits. Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex interconnected circuits of monocrystalline Si on a chip.
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Affiliation(s)
- Monica Bollani
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy.
| | - Marco Salvalaglio
- Institute of Scientific Computing, Technische Universität Dresden, 01062, Dresden, Germany.
| | - Abdennacer Benali
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Mohammed Bouabdellaoui
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratory of Physics of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, Hassan II University of Casablanca, 146 Mohammedia, Casablanca, Morocco
| | - Meher Naffouti
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, 5019, Monastir, Tunisia
| | - Mario Lodari
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Stefano Di Corato
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Alexey Fedorov
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Axel Voigt
- Institute of Scientific Computing, Technische Universität Dresden, 01062, Dresden, Germany.,Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
| | - Ibtissem Fraj
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, 5019, Monastir, Tunisia
| | - Luc Favre
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Jean Benoit Claude
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - David Grosso
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | | | - Antonio Mio
- CNR-IMM, Zona Industriale Strada VIII, 5, 95121, Catania, Italy
| | - Antoine Ronda
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Isabelle Berbezier
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Marco Abbarchi
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.
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7
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Mitsai E, Naffouti M, David T, Abbarchi M, Hassayoun L, Storozhenko D, Mironenko A, Bratskaya S, Juodkazis S, Makarov S, Kuchmizhak A. Si 1-xGe x nanoantennas with a tailored Raman response and light-to-heat conversion for advanced sensing applications. NANOSCALE 2019; 11:11634-11641. [PMID: 31173032 DOI: 10.1039/c9nr01837a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Active light-emitting all-dielectric nanoantennas recently have demonstrated great potential as highly efficient nanoscale light sources owing to their strong luminescent and Raman responses. However, their large-scale fabrication faces a number of problems related to productivity limits of existing lithography techniques. Thus, high-throughput fabrication strategies allowing in a facile way to tailor of the nanoantenna emission and thermal properties in the process of their fabrication are highly desirable for various applications. Here, we propose a cost-effective approach to large-scale fabrication of Si1-xGex alloyed Mie nanoresonators possessing an enhanced inherent Raman response which can be simply tailored via tuning the Ge concentration. Moreover, by tailoring the relative Ge composition one can gradually change a complex refractive index of the produced Si1-xGex alloy, which affects the ratio between radiative and nonradiative losses in Si1-xGex nanoantennas, which is crucial for optimization of their optical heating efficiency. Composition-tunable Si1-xGex nanoantennas with an optimized size, light-to-heat conversion and Raman response are implemented for non-invasive sensing of 4-aminothiophenol molecules with a temperature feedback modality and high subwavelength spatial resolution. The results are important for advanced multichannel optical sensing, providing information on analyte's composition, analyte-nanoantenna temperature response and spatial position.
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Affiliation(s)
- E Mitsai
- Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok 690041, Russia.
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