Templated Solid-State Dewetting of Thin Silicon Films

Laser-printed hemispherical silicon Mie resonators

Subwavelength nanostructures made of high-index low-loss materials have revolutionized the fields of linear and nonlinear nanophotonics, stimulating growing demands for efficient and inexpensive fabrication technologies. Here, we demonstrate high-precision and reproducible printing of hemispherical Si nanoparticles (NPs) via controllable dewetting of glass-supported $\alpha$-Si films driven by a single femtosecond laser pulse. The diameter of the formed nanocrystalline NPs can be fully controlled by initial $\alpha$-Si film thickness as well as lateral size of the laser spot and can be predicted by a simple empirical model based on conservation of energy and mass. A resonant optical response associated with Mie-type resonances supported by hemispherical NPs was confirmed by combining numerical modeling with optical microspectroscopy. Inexpensive and high-performing direct laser printing of nanocrystalline Si Mie resonators with a user-defined arrangement opens a pathway for various applications in optical sensing and nonlinear nanophotonics.

Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances

We use low-resolution optical lithography joined with solid state dewetting of crystalline, ultra-thin silicon on insulator (c-UT-SOI) to form monocrystalline, atomically smooth, silicon-based Mie resonators in well-controlled large periodic arrays. The dewetted islands have a typical size in the 100 nm range, about one order of magnitude smaller than the etching resolution. Exploiting a 2 µm thick SiO₂ layer separating the islands and the underlying bulk silicon wafer, we combine the resonant modes of the antennas with the etalon effect. This approach sets the resonance spectral position and improves the structural colorization and the contrast between scattering maxima and minima of individual resonant antennas. Our results demonstrate that templated dewetting enables the formation of defect-free, faceted islands that are much smaller than the nominal etching resolution and that an appropriate engineering of the substrate improves their scattering properties. These results are relevant to applications in spectral filtering, structural color and beam steering with all-dielectric photonic devices.

Fabrication of Ge2Sb2Te5 crystal micro/nanostructures through single-shot Gaussian-shape femtosecond laser pulse irradiation

Femtosecond (fs) laser-thin film interaction is one of the most practical methods for fabricating functional nanostructures. However, the details of the interaction mechanism remain unclear. In this study, we demonstrate an abnormal ablation effect on nanofilms by using a tightly focused single fs laser pulse. After the irradiation of a single Gaussian-shaped femtosecond laser pulse, a molten micro/nanopatch at the irradiated central high-power zone is isolated from the surrounding film. The confined localized threshold effect is proposed as the main mechanism for the phase isolation. With this effect, the high refractive index dielectric Ge₂Sb₂Te₅ crystal nanostructures can be fabricated by directed dewetting of the isolated molten micro/nanopatch on Si substrates. After the laser irradiation, the central isolated liquid through an amorphous GST film is transformed into a crystalline state after resolidification. The isolated central micro/nanopatch size can be controlled by the focused spot size and pulse energy, so that the morphologies (size, geometrical morphology, and distribution) of GST nanostructures can be flexibly modulated. Furthermore, separated solid and liquid phase states detected using spatial-temporal-resolved microscopy validates the crucial role of the confined-localized threshold effect in the dewetting effect based on the separated liquid phase.

Direct and High-Throughput Fabrication of Mie-Resonant Metasurfaces via Single-Pulse Laser Interference

High-index dielectric metasurfaces featuring Mie-type electric and magnetic resonances have been of great interest in a variety of applications such as imaging, sensing, photovoltaics, and others, which led to the necessity of an efficient large-scale fabrication technique. To address this, here we demonstrate the use of single-pulse laser interference for direct patterning of an amorphous silicon film into an array of Mie resonators a few hundred nanometers in diameter. The proposed technique is based on laser-interference-induced dewetting. A precise control of the laser pulse energy enables the fabrication of ordered dielectric metasurfaces in areas spanning tens of micrometers and consisting of thousands of hemispherical nanoparticles with a single laser shot. The fabricated nanoparticles exhibit a wavelength-dependent optical response with a strong electric dipole signature. Variation of the predeposited silicon film thickness allows tailoring of the resonances in the targeted visible and infrared spectral ranges. Such direct and high-throughput fabrication is a step toward a simple realization of spatially invariant metasurface-based devices.

Laser-induced spatially-selective tailoring of high-index dielectric metasurfaces

Optically resonant high-index dielectric metasurfaces featuring Mie-type electric and magnetic resonances are usually fabricated by means of planar technologies, which limit the degrees of freedom in tunability and scalability of the fabricated systems. Therefore, we propose a complimentary post-processing technique based on ultrashort (≤ 10 ps) laser pulses. The process involves thermal effects: crystallization and reshaping, while the heat is localized by a high-precision positioning of the focused laser beam. Moreover, for the first time, the resonant behavior of dielectric metasurface elements is exploited to engineer a specific absorption profile, which leads to a spatially-selective heating and a customized modification. Such technique has the potential to reduce the complexity in the fabrication of non-uniform metasurface-based optical elements. Two distinct cases, a spatial pixelation of a large-scale metasurface and a height modification of metasurface elements, are explicitly demonstrated.

Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

Large-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sim$$\end{document}~1/60000 and self-assembled \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sim$$\end{document}~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.

Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex interconnected circuits of monocrystalline Si on a chip.

Si1-xGex nanoantennas with a tailored Raman response and light-to-heat conversion for advanced sensing applications

Active light-emitting all-dielectric nanoantennas recently have demonstrated great potential as highly efficient nanoscale light sources owing to their strong luminescent and Raman responses. However, their large-scale fabrication faces a number of problems related to productivity limits of existing lithography techniques. Thus, high-throughput fabrication strategies allowing in a facile way to tailor of the nanoantenna emission and thermal properties in the process of their fabrication are highly desirable for various applications. Here, we propose a cost-effective approach to large-scale fabrication of Si1-xGex alloyed Mie nanoresonators possessing an enhanced inherent Raman response which can be simply tailored via tuning the Ge concentration. Moreover, by tailoring the relative Ge composition one can gradually change a complex refractive index of the produced Si1-xGex alloy, which affects the ratio between radiative and nonradiative losses in Si1-xGex nanoantennas, which is crucial for optimization of their optical heating efficiency. Composition-tunable Si1-xGex nanoantennas with an optimized size, light-to-heat conversion and Raman response are implemented for non-invasive sensing of 4-aminothiophenol molecules with a temperature feedback modality and high subwavelength spatial resolution. The results are important for advanced multichannel optical sensing, providing information on analyte's composition, analyte-nanoantenna temperature response and spatial position.