Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices

With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit-level, it is necessary to develop advanced nanopatterning methods to obtain high-quality, wafer-scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large-scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow's technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.

Amplitude-phase optimized long depth of focus femtosecond axilens beam for single-exposure fabrication of high-aspect-ratio microstructures

Fabrication of high-aspect-ratio (HAR) micro/nanostructures by two-photon polymerization (TPP) has become a hot topic because of the advantages of ultra-high resolution and true 3D printing ability. However, the low efficiency caused by point-by-point scanning strategy limits its application. In this Letter, we propose a strategy for the rapid fabrication of HAR microstructures by combining TPP with an amplitude-phase optimized long depth of focus laser beam (LDFB). The optimization of the LDFB is implemented by modulating the amplitude and phase on a phase-only spatial light modulator, which can suppress the side lobe and smooth energy oscillations effectively. The LDFB is used for rapid fabrication of HAR micropillars and various microstructures, which greatly increases the fabrication efficiency. As a demonstration, several typical HAR microstructures such as assemblies, microchannels, microtubes, and cell scaffolds are prepared. Moreover, the microcapture arrays are rapidly fabricated for the capture of microspheres and the formation of microlens arrays, which show focusing and imaging ability.