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Pérez-Diaz O, Estrada-Wiese D, Aceves-Mijares M, González-Fernández AA. Functionalization of a Fully Integrated Electrophotonic Silicon Circuit for Biotin Sensing. Biosensors (Basel) 2023; 13:399. [PMID: 36979611 PMCID: PMC10046063 DOI: 10.3390/bios13030399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/18/2023] [Revised: 03/11/2023] [Accepted: 03/15/2023] [Indexed: 06/18/2023]
Abstract
Electrophotonic (EPh) circuits are novel systems where photons and electrons can be controlled simultaneously in the same integrated circuit, attaining the development of innovative sensors for different applications. In this work, we present a complementary metal-oxide-semiconductor (CMOS)-compatible EPh circuit for biotin sensing, in which a silicon-based light source is monolithically integrated. The device is composed of an integrated light source, a waveguide, and a p-n photodiode, which are all fabricated in the same chip. The functionalization of the waveguide's surface was investigated to biotinylate the EPh system for potential biosensing applications. The modified surfaces were characterized by AFM, optical microscopy, and Raman spectroscopy, as well as by photoluminescence measurements. The changes on the waveguide's surface due to functionalization and biotinylation translated into different photocurrent intensities detected in the photodiode, demonstrating the potential uses of the EPh circuit as a biosensor.
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Nardi A, Turchetti M, Britton WA, Chen Y, Yang Y, Dal Negro L, Berggren KK, Keathley PD. Nanoscale refractory doped titanium nitride field emitters. Nanotechnology 2021; 32:315208. [PMID: 33862600 DOI: 10.1088/1361-6528/abf8de] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2021] [Accepted: 04/16/2021] [Indexed: 06/12/2023]
Abstract
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities. Recent results have demonstrated that the optical properties of titanium nitride, a refractory and CMOS-compatible plasmonic material, can be tuned by adding silicon and oxygen dopants. However, to fully leverage the potential of titanium (silicon oxy)nitride, a reliable and scalable fabrication process with few-nm precision is needed. In this work, we developed a fabrication process for producing engineered nanostructures with gaps between 10 and 15 nm, aspect ratios larger than 5 with almost 90° steep sidewalls. Using this process, we fabricated large-scale arrays of electrically-connected bow-tie nanoantennas with few-nm free-space gaps. We measured a typical variation of 4 nm in the average gap size. Using applied DC voltages and optical illumination, we tested the electronic and optoelectronic response of the devices, demonstrating sub-10 V tunneling operation across the free-space gaps, and quantum efficiency of up to 1 × 10-3at 1.2μm, which is comparable to a bulk silicon photodiode at the same wavelength and three orders of magnitude higher than with nearly identical gold devices. Tests demonstrated that the titanium silicon oxynitride nanostructures did not significantly degrade, exhibiting less than 5 nm of shrinking of the average gap dimensions over few-μm2areas after 10 h of operation. Our results will be useful for developing the next generation of robust and CMOS-compatible nanoscale devices for high-speed and low-power field-emission electronics and optoelectronics applications.
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Affiliation(s)
- A Nardi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA 02139, United States of America
- Department of Electronics and Telecommunications, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino, I-10129, Italy
| | - M Turchetti
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA 02139, United States of America
| | - W A Britton
- Division of Material Science & Engineering, Boston University, 15 Saint Mary's Street, Brookline, MA 02446, United States of America
| | - Y Chen
- Division of Material Science & Engineering, Boston University, 15 Saint Mary's Street, Brookline, MA 02446, United States of America
| | - Y Yang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA 02139, United States of America
| | - L Dal Negro
- Division of Material Science & Engineering, Boston University, 15 Saint Mary's Street, Brookline, MA 02446, United States of America
- Department of Electrical & Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, MA 02215, United States of America
- Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, MA 02215, United States of America
| | - K K Berggren
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA 02139, United States of America
| | - P D Keathley
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 50 Vassar Street, Cambridge, MA 02139, United States of America
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Leonardi AA, Faro MJL, Irrera A. Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review. Nanomaterials (Basel) 2021; 11:383. [PMID: 33546133 PMCID: PMC7913243 DOI: 10.3390/nano11020383] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/16/2020] [Revised: 01/28/2021] [Accepted: 02/01/2021] [Indexed: 02/07/2023]
Abstract
Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow's technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.
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Affiliation(s)
- Antonio Alessio Leonardi
- Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy; (A.A.L.); (M.J.L.F.)
- Consiglio Nazionale delle Ricerche—Instituto Processi Chimico-Fisici (CNR-IPCF), Viale F. Stagno D’Alcontres 37, 98158 Messina, Italy
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM) UoS Catania, Via Santa Sofia 64, 95123 Catania, Italy
| | - Maria José Lo Faro
- Dipartimento di Fisica e Astronomia “Ettore Majorana”, Università di Catania, Via Santa Sofia 64, 95123 Catania, Italy; (A.A.L.); (M.J.L.F.)
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM) UoS Catania, Via Santa Sofia 64, 95123 Catania, Italy
| | - Alessia Irrera
- Consiglio Nazionale delle Ricerche—Instituto Processi Chimico-Fisici (CNR-IPCF), Viale F. Stagno D’Alcontres 37, 98158 Messina, Italy
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Mallavarapu A, Ajay P, Barrera C, Sreenivasan SV. Ruthenium-Assisted Chemical Etching of Silicon: Enabling CMOS-Compatible 3D Semiconductor Device Nanofabrication. ACS Appl Mater Interfaces 2021; 13:1169-1177. [PMID: 33348977 DOI: 10.1021/acsami.0c17011] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The semiconductor industry's transition to three-dimensional (3D) logic and memory devices has revealed the limitations of plasma etching in reliable creation of vertical high aspect ratio (HAR) nanostructures. Metal-assisted chemical etch (MacEtch) can create ultra-HAR, taper-free nanostructures in silicon, but the catalyst used for reliable MacEtch-gold-is not CMOS (complementary metal-oxide-semiconductor)-compatible and therefore cannot be used in the semiconductor industry. Here, for the first time, we report a ruthenium MacEtch process that is comparable in quality to gold MacEtch. We introduce new process variables-catalyst plasma pretreatment and surface area-to achieve this result. Ruthenium is particularly desirable as it is not only CMOS-compatible but has also been introduced in semiconductor fabrication as an interconnect material. The results presented here remove a significant barrier to adoption of MacEtch for scalable fabrication of 3D semiconductor devices, sensors, and biodevices that can benefit from production in CMOS foundries.
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Affiliation(s)
- Akhila Mallavarapu
- NASCENT Engineering Research Center, University of Texas at Austin, Austin, Texas 78758, United States
| | - Paras Ajay
- NASCENT Engineering Research Center, University of Texas at Austin, Austin, Texas 78758, United States
| | - Crystal Barrera
- NASCENT Engineering Research Center, University of Texas at Austin, Austin, Texas 78758, United States
| | - S V Sreenivasan
- NASCENT Engineering Research Center, University of Texas at Austin, Austin, Texas 78758, United States
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Ma Z, Zhou S, Zhou C, Xiao Y, Li S, Chan M. Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts. Nanomaterials (Basel) 2020; 10:nano10101918. [PMID: 32992981 PMCID: PMC7600545 DOI: 10.3390/nano10101918] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2020] [Revised: 09/04/2020] [Accepted: 09/11/2020] [Indexed: 11/16/2022]
Abstract
Synthesis of the vertically aligned carbon nanotubes (CNTs) using complementary metal-oxide-semiconductor (CMOS)-compatible methods is essential to integrate the CNT contact and interconnect to nanoscale devices and ultra-dense integrated nanoelectronics. However, the synthesis of high-density CNT array at low-temperature remains a challenging task. The advances in the low-temperature synthesis of high-density vertical CNT structures using CMOS-compatible methods are reviewed. Primarily, recent works on theoretical simulations and experimental characterizations of CNT growth emphasized the critical roles of catalyst design in reducing synthesis temperature and increasing CNT density. In particular, the approach of using multilayer catalyst film to generate the alloyed catalyst nanoparticle was found competent to improve the active catalyst nanoparticle formation and reduce the CNT growth temperature. With the multilayer catalyst, CNT arrays were directly grown on metals, oxides, and 2D materials. Moreover, the relations among the catalyst film thickness, CNT diameter, and wall number were surveyed, which provided potential strategies to control the tube density and the wall density of synthesized CNT array.
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Affiliation(s)
- Zichao Ma
- Dept. Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China; (Z.M.); (C.Z.); (Y.X.); (S.L.); (M.C.)
| | - Shaolin Zhou
- Dept. Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China; (Z.M.); (C.Z.); (Y.X.); (S.L.); (M.C.)
- School of Microelectronics, South China University of Technology, Guangzhou 510640, China
- Correspondence:
| | - Changjian Zhou
- Dept. Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China; (Z.M.); (C.Z.); (Y.X.); (S.L.); (M.C.)
- School of Microelectronics, South China University of Technology, Guangzhou 510640, China
| | - Ying Xiao
- Dept. Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China; (Z.M.); (C.Z.); (Y.X.); (S.L.); (M.C.)
| | - Suwen Li
- Dept. Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China; (Z.M.); (C.Z.); (Y.X.); (S.L.); (M.C.)
| | - Mansun Chan
- Dept. Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China; (Z.M.); (C.Z.); (Y.X.); (S.L.); (M.C.)
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Kim JD, Kim M, Chan C, Draeger N, Coleman JJ, Li X. CMOS-Compatible Catalyst for MacEtch: Titanium Nitride-Assisted Chemical Etching in Vapor phase for High Aspect Ratio Silicon Nanostructures. ACS Appl Mater Interfaces 2019; 11:27371-27377. [PMID: 31265223 DOI: 10.1021/acsami.9b00871] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Metal-assisted chemical etching (MacEtch) is an emerging anisotropic chemical etching technique that has been used to fabricate high aspect ratio semiconductor micro- and nanostructures. Despite its advantages in unparalleled anisotropy, simplicity, versatility, and damage-free nature, the adaptation of MacEtch for silicon (Si)-based electronic device fabrication process is hindered by the use of a gold (Au)-based metal catalyst, as Au is a detrimental deep-level impurity in Si. In this report, for the first time, we demonstrate CMOS-compatible titanium nitride (TiN)-based MacEtch of Si by establishing a true vapor-phase (VP) MacEtch approach in order to overcome TiN-MacEtch-specific challenges. Whereas inverse-MacEtch is observed using conventional liquid phase MacEtch because of the limited mass transport from the strong adhesion between TiN and Si, the true VP etch leads to forward MacEtch and produces Si nanowire arrays by engraving the TiN mesh pattern in Si. The etch rate as a function of etch temperature, solution concentration, TiN dimension, and thickness is systematically characterized to uncover the underlying nature of MacEtching using this new catalyst. VP MacEtch represents a significant step toward scalability of this disruptive technology because of the high controllability of gas phase reaction dynamics. TiN-MacEtch may also have direct implications in embedded TiN-based plasmonic semiconductor structures for photonic applications.
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Affiliation(s)
- Jeong Dong Kim
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory , University of Illinois at Urbana-Champaign , Champaign , Illinois 61801 , United States
| | - Munho Kim
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory , University of Illinois at Urbana-Champaign , Champaign , Illinois 61801 , United States
| | - Clarence Chan
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory , University of Illinois at Urbana-Champaign , Champaign , Illinois 61801 , United States
| | - Nerissa Draeger
- Lam Research Corporation , Fremont , California 94538 , United States
| | - James J Coleman
- Department of Electrical Engineering and Department of Materials Science , University of Texas at Dallas , Richardson , Texas 75080 , United States
| | - Xiuling Li
- Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory , University of Illinois at Urbana-Champaign , Champaign , Illinois 61801 , United States
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Stratulat A, Serban BC, de Luca A, Avramescu V, Cobianu C, Brezeanu M, Buiu O, Diamandescu L, Feder M, Ali SZ, Udrea F. Low Power Resistive Oxygen Sensor Based on Sonochemical SrTi0.6Fe0.4O2.8 (STFO40). Sensors (Basel) 2015; 15:17495-506. [PMID: 26205267 DOI: 10.3390/s150717495] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
The current paper reports on a sonochemical synthesis method for manufacturing nanostructured (typical grain size of 50 nm) SrTi0.6Fe0.4O2.8 (Sono-STFO40) powder. This powder is characterized using X ray-diffraction (XRD), Mössbauer spectroscopy and Scanning Electron Microscopy (SEM), and results are compared with commercially available SrTi0.4Fe0.6O2.8 (STFO60) powder. In order to manufacture resistive oxygen sensors, both Sono-STFO40 and STFO60 are deposited, by dip-pen nanolithography (DPN) method, on an SOI (Silicon-on-Insulator) micro-hotplate, employing a tungsten heater embedded within a dielectric membrane. Oxygen detection tests are performed in both dry (RH = 0%) and humid (RH = 60%) nitrogen atmosphere, varying oxygen concentrations between 1% and 16% (v/v), at a constant heater temperature of 650 °C. The oxygen sensor, based on the Sono-STFO40 sensing layer, shows good sensitivity, low power consumption (80 mW), and short response time (25 s). These performance are comparable to those exhibited by state-of-the-art O2 sensors based on STFO60, thus proving Sono-STFO40 to be a material suitable for oxygen detection in harsh environments.
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Lu N, Gao A, Dai P, Li T, Wang Y, Gao X, Song S, Fan C, Wang Y. Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors. Methods 2013; 63:212-8. [PMID: 23886908 DOI: 10.1016/j.ymeth.2013.07.012] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2013] [Revised: 05/16/2013] [Accepted: 07/02/2013] [Indexed: 02/07/2023] Open
Abstract
Silicon nanowire field-effect transistors (SiNW-FETs) have recently emerged as a type of powerful nanoelectronic biosensors due to their ultrahigh sensitivity, selectivity, label-free and real-time detection capabilities. Here, we present a protocol as well as guidelines for detecting DNA with complementary metal oxide semiconductor (CMOS) compatible SiNW-FET sensors. SiNWs with high surface-to-volume ratio and controllable sizes were fabricated with an anisotropic self-stop etching technique. Probe DNA molecules specific for the target DNA were covalently modified onto the surface of the SiNWs. The SiNW-FET nanosensors exhibited an ultrahigh sensitivity for detecting the target DNA as low as 1 fM and good selectivity for discrimination from one-base mismatched DNA.
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Affiliation(s)
- Na Lu
- State Key Laboratories of Transducer Technology and Science and Technology on Micro-system Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Chang SR, Chen H. A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction. Sensors (Basel) 2009; 9:8336-48. [PMID: 22408508 DOI: 10.3390/s91008336] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/30/2009] [Revised: 09/25/2009] [Accepted: 10/14/2009] [Indexed: 11/24/2022]
Abstract
Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency noise. With a particular layout design, the conduction efficiency is further enhanced. Moreover, the ISFET is compatible with the standard CMOS technology. All materials above the gate-oxide are removed by simple, die-level post-CMOS process, allowing ions to modulate the lateral-bipolar current directly. By varying the gate-to-bulk voltage, the operation mode of the ISFET is controlled effectively, so is the noise performance measured and compared. Finally, the biasing conditions preferable for different low-noise applications are identified. Under the identified biasing condition, the signal-to-noise ratio of the ISFET as a pH sensor is proved to be improved by more than five times.
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