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Adekoya GJ, Adekoya OC, Muloiwa M, Sadiku ER, Kupolati WK, Hamam Y. Advances In Borophene: Synthesis, Tunable Properties, and Energy Storage Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403656. [PMID: 38818675 DOI: 10.1002/smll.202403656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2024] [Revised: 05/23/2024] [Indexed: 06/01/2024]
Abstract
Monolayer boron nanosheet, commonly known as borophene, has garnered significant attention in recent years due to its unique structural, electronic, mechanical, and thermal properties. This review paper provides a comprehensive overview of the advancements in the synthetic strategies, tunable properties, and prospective applications of borophene, specifically focusing on its potential in energy storage devices. The review begins by discussing the various synthesis techniques for borophene, including molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and chemical methods, such as ultrasonic exfoliation and thermal decomposition of boron-containing precursors. The tunable properties of borophene, including its electronic, mechanical, and thermal characteristics, are extensively reviewed, with discussions on its bandgap engineering, plasmonic behavior, and thermal conductivity. Moreover, the potential applications of borophene in energy storage devices, particularly as anode materials in metal-ion batteries and supercapacitors, along with its prospects in other energy storage systems, such as sodium-oxygen batteries, are succinctly, discussed. Hence, this review provides valuable insights into the synthesis, properties, and applications of borophene, offering much-desired guidance for further research and development in this promising area of nanomaterials science.
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Affiliation(s)
- Gbolahan Joseph Adekoya
- Institute of NanoEngineering Research (INER) & Department of Chemical, Metallurgical and Materials Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria, 0183, South Africa
| | - Oluwasegun Chijioke Adekoya
- Institute of NanoEngineering Research (INER) & Department of Chemical, Metallurgical and Materials Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria, 0183, South Africa
| | - Mpho Muloiwa
- Department of Civil Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria, 0183, South Africa
| | - Emmanuel Rotimi Sadiku
- Institute of NanoEngineering Research (INER) & Department of Chemical, Metallurgical and Materials Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria, 0183, South Africa
| | - Williams Kehinde Kupolati
- Department of Civil Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria, 0183, South Africa
| | - Yskandar Hamam
- Department of Electrical Engineering, Faculty of Engineering and the Built Environment, Tshwane University of Technology, Pretoria, 0183, South Africa
- École Supérieure d'Ingénieurs en Électrotechnique et Électronique, Cité Descartes, 2 Boulevard Blaise Pascal, Noisy-le-Grand, Paris, 93160, France
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Ye P, Xiao J, Fan J, Chen J, Gao N, Yang X. Structural Characterization of Boron Sheets beyond the Monolayer and Implication for Experimental Synthesis and Identification. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:16191-16198. [PMID: 37930136 DOI: 10.1021/acs.langmuir.3c02573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
The successful synthesis of quasi-freestanding bilayer borophene has aroused much attention for its superior physical properties and holds great promise for future electronic devices. Herein, we comprehensively explore six boron sheets beyond the monolayer and structurally characterize them via various methods using first-principles calculations for experimental references. On the basis of atomic models of borophenes, simulated scanning tunneling microscope (STM) images show different morphologies at different bias voltages and are explained by the partial densities of states and the height differences in the vertical direction. Simulated transmission electron microscope images further probe the internal atomic arrangement of boron sheets and compensate for the shortcomings of STM images to better distinguish different phases of boron sheets. The interlayer coupling strength is stronger in bilayer borophenes than in the three-layer system via the electron localization function and Mulliken bond population. In addition, simulated X-ray diffraction and infrared spectra show different characteristic peaks and corresponding vibrational modes to further characterize these boron sheets. These theoretical results can decrease the prime cost and provide vital guidance for the experimental synthesis and identification of boron sheets beyond the monolayer.
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Affiliation(s)
- Panbin Ye
- School of Materials Science and Engineering, Taizhou University, Taizhou 318000, China
| | - Jingyi Xiao
- Instrumental Analysis Center, Dalian University of Technology, Dalian 116024, China
| | - Junyu Fan
- Department of Physics, Taiyuan Normal University, Jinzhong 030619, People's Republic of China
| | - Jinghuang Chen
- School of Materials Science and Engineering, Taizhou University, Taizhou 318000, China
| | - Nan Gao
- School of Materials Science and Engineering, Taizhou University, Taizhou 318000, China
| | - Xiaowei Yang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
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Rivera-Tello CD, Guerrero JA, Huerta L, Flores-Ruiz FJ, Flores M, Quiñones-Galván JG. Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100). RSC Adv 2023; 13:29819-29829. [PMID: 37829715 PMCID: PMC10566584 DOI: 10.1039/d3ra04601j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Accepted: 09/25/2023] [Indexed: 10/14/2023] Open
Abstract
Developing borophene films with good structural stability on non-metallic substrates to maximize their potential in photosensitivity, gas detection, photothermia, energy storage, and deformation detection, among others has been challenging in recent years. Herein, we succeeded in the pulsed laser deposition of multilayered borophene films on Si (100) with β12 or χ3 bonding by tuning the mean kinetic energy in the plasma during the deposition process. Raman and X-ray photoelectron spectroscopies confirm β12 and χ3 bonding in the films. Borophene films with β12 bonding were obtained by tuning a high mean kinetic energy in the plasma, while borophene with χ3 bonding required a relatively low mean kinetic energy. Atomic force microscopy (AFM) micrographs revealed a granular and directional growth of the multilayered borophene films following the linear atomic terraces from the (100) silicon substrate. AFM nanofriction was used to access the borophene surfaces and to reveal the pull-off force and friction coefficient of the films where the surface oxide showed a significant contribution. To summarize, we show that it is possible to deposit multilayered borophene thin films with different bondings by tuning the mean kinetic energy during pulsed laser deposition. The characterization of the plasma during borophene deposition accompanies our findings, providing support for the changes in kinetic energy.
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Affiliation(s)
- César D Rivera-Tello
- Departamento de Ingeniería Mecánica Eléctrica, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
| | - J A Guerrero
- Departamento de Ingeniería Mecánica Eléctrica, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
| | - L Huerta
- Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México A. P. 70-360 04510 Ciudad de México Mexico
| | - Francisco J Flores-Ruiz
- CONAHCYT-Instituto de Física, Benemérita Universidad Autónoma de Puebla Ciudad Universitaria, Edif. IF-1 Puebla 72570 México
| | - M Flores
- Departamento de Ingeniería de Proyectos, Universidad de Guadalajara 45150 Zapopan Jalisco Mexico
| | - J G Quiñones-Galván
- Departamento de Física, CUCEI, Universidad de Guadalajara Blvd. Marcelino García Barragán 1421, Olímpica Guadalajara Jalisco C.P. 44430 Mexico
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4
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Tsai HS, Wang Y, Liu C, Wang T, Huo M. The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection. JOURNAL OF HAZARDOUS MATERIALS 2022; 423:127148. [PMID: 34537634 DOI: 10.1016/j.jhazmat.2021.127148] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 08/23/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
The intrinsic and electronic properties of elemental two-dimensional (2D) materials beyond graphene are first introduced in this review. Then the studies concerning the application of gas sensing using these 2D materials are comprehensively reviewed. On the whole, the carbon-, nitrogen-, and sulfur-based gases could be effectively detected by using most of them. For the sensing of organic vapors, the borophene, phosphorene, and arsenene may perform it well. Moreover, the G-series nerve agents might be efficiently monitored by the bismuthene. So far, there is still challenge on the material preparation due to the instability of these 2D materials under atmosphere. The synthesis or growth of materials integrated with the technique of surface protection should be associated with the device fabrication to establish a complete process for particular application. This review provides a complete and methodical guideline for scientists to further research and develop the hazardous gas sensors of these 2D materials in order to achieve the purpose of environmental protection.
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Affiliation(s)
- Hsu-Sheng Tsai
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China; School of Physics, Harbin Institute of Technology, 150001 Harbin, China.
| | - You Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, 150001 Harbin, China
| | - Chaoming Liu
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China; School of Materials Science and Engineering, Harbin Institute of Technology, 150001 Harbin, China
| | - Tianqi Wang
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China
| | - Mingxue Huo
- Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China
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5
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Joshi DJ, Malek NI, Kailasa SK. Borophene as a rising star in materials chemistry: synthesis, properties and applications in analytical science and energy devices. NEW J CHEM 2022. [DOI: 10.1039/d1nj05271c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Borophene is a two-dimensional material that has shown outstanding applications in energy storage devices and analytical chemistry.
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Affiliation(s)
- Dharaben J. Joshi
- Department of Chemistry, Sardar Vallabhbhai National Institute of Technology, Surat – 395007, Gujarat, India
| | - Naved I. Malek
- Department of Chemistry, Sardar Vallabhbhai National Institute of Technology, Surat – 395007, Gujarat, India
| | - Suresh Kumar Kailasa
- Department of Chemistry, Sardar Vallabhbhai National Institute of Technology, Surat – 395007, Gujarat, India
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Yu X, Zhou T, Zhao Y, Lu F, Zhang X, Liu G, Gou H, Zurek E, Luo X. Surface Magnetism in Pristine α Rhombohedral Boron and Intersurface Exchange Coupling Mechanism of Boron Icosahedra. J Phys Chem Lett 2021; 12:6812-6817. [PMID: 34270247 DOI: 10.1021/acs.jpclett.1c01860] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We report intrinsic surface magnetism in pristine α rhombohedral boron (α-boron) using first-principles calculations. Semiconducting α-boron has been cleaved along the (001), (102̅), and (101) planes to produce icosahedral-based non-van der Waals face-boron, t-face-boron, and edge-boron structures, respectively. Face-boron is found to be metallic, while t-face-boron and edge-boron show semiconducting features. In particular, edge-boron exhibits layer-dependent magnetism with a transition from an overall antiferromagnetic (AFM) state with AFM surfaces to either an AFM or a ferromagnetic (FM) state with FM surfaces as the number of layers increases. The magnetism in edge-boron arises from the spin polarization of boron atoms with unsaturated bonds at the edge sites in the upper and lower surfaces, and magnetic exchange coupling can be mediated via adjacent boron icosahedra by up to a maximum of 8.4 Å. These findings deepen our understanding of icosahedral-based boron and boron-rich materials, which may be useful in potential spintronics applications.
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Affiliation(s)
- Xiao Yu
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Tiege Zhou
- Department of Electronics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China
| | - Yuanchun Zhao
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Feng Lu
- Department of Electronics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China
| | - Xiaoming Zhang
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Guodong Liu
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Eva Zurek
- Department of Chemistry, State University of New York at Buffalo, Buffalo, New York 14260, United States
| | - Xiaoguang Luo
- Department of Electronics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China
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7
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Liu F, Qu F, Žutić I, Xie S, Liu D, Fonseca ALA, Malard M. Robust Topological Nodal-Line Semimetals from Periodic Vacancies in Two-Dimensional Materials. J Phys Chem Lett 2021; 12:5710-5715. [PMID: 34128659 DOI: 10.1021/acs.jpclett.1c01249] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A nodal-line semimetal (NLSM) is suppressed in the presence of spin-orbit coupling unless it is protected by a nonsymmorphic symmetry. We show that two-dimensional (2D) materials can realize robust NLSMs when vacancies are introduced on the lattice. As a case study we investigate borophene, a boron honeycomb-like sheet. While the Dirac cones of pristine borophene are shown to be gapped out by spin-orbit coupling and by magnetic exchange, robust nodal lines (NLs) emerge in the spectrum when selected atoms are removed. We propose an effective 2D model and a symmetry analysis to demonstrate that these NLs are topological and protected by a nonsymmorphic glide plane. Our findings offer a paradigm shift to the design of NLSMs: instead of searching for nonsymmorphic materials, robust NLSMs may be realized simply by removing atoms from ordinary symmorphic crystals.
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Affiliation(s)
- F Liu
- Instituto de Física, Universidade de Brasília, Brasília-DF, Brazil
| | - F Qu
- Instituto de Física, Universidade de Brasília, Brasília-DF, Brazil
| | - I Žutić
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York 14260, United States
| | - S Xie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
| | - D Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
| | - A L A Fonseca
- Instituto de Física, Universidade de Brasília, Brasília-DF, Brazil
| | - M Malard
- Faculdade UnB Planaltina, Universidade de Brasília, Brasília-DF, Brazil
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Joseph J, Sivasankarapillai VS, Nikazar S, Shanawaz MS, Rahdar A, Lin H, Kyzas GZ. Borophene and Boron Fullerene Materials in Hydrogen Storage: Opportunities and Challenges. CHEMSUSCHEM 2020; 13:3754-3765. [PMID: 32338453 DOI: 10.1002/cssc.202000782] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2020] [Revised: 04/25/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional materials have led to a leap forward in materials science research, especially in the fields of energy conversion and storage. Borophene and its spherical counterpart boron fullerene represent emerging materials that have attracted much attention in the whole area of advanced energy materials and technologies. Owing to their prominent features, such as electronic environment and geometry, borophene and boron fullerene have been used in versatile applications, such as supercapacitors, superconductors, anode materials for photochemical water splitting, and biosensors. Herein, one of the most promising applications/areas of hydrogen storage is discussed. Boron fullerenes have been considered and discussed for hydrogen-storage applications, and recently borophene was also included in the list of materials with promising hydrogen-storage properties. Studies focus mainly on doped borophene systems over pristine borophene due to enhanced features available upon decoration with metal atoms. This Review introduces very recent progress and novel paradigms with respect to both borophene derivatives and boron fullerene based systems reported for hydrogen storage, with a focus on the synthesis, physiochemical properties, hydrogen-storage mechanism, and practical applications.
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Affiliation(s)
- Jithu Joseph
- Department of Applied Chemistry, Cochin University of Science and Technology, Kerala, 682022, India
| | | | - Sohrab Nikazar
- Chemical Engineering Faculty, Engineering College, University of Tehran, P.O. Box 14155-6455, Tehran, 14155-6455, Iran
| | | | - Abbas Rahdar
- Department of Physics, University of Zabol, Zabol, 538-98615, Iran
| | - Han Lin
- State Key Lab of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, PR China
| | - George Z Kyzas
- Department of Chemistry, International Hellenic University, Kavala, 65404, Greece
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9
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Kang Y, Ji X, Li Z, Su Z, Zhang S. Boron-based nanosheets for combined cancer photothermal and photodynamic therapy. J Mater Chem B 2020; 8:4609-4619. [PMID: 32373909 DOI: 10.1039/d0tb00070a] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
Tumor phototherapy is of great significance for the expansion and advancement of cancer treatment methods. Herein, two-dimensional boron nanosheets (B NSs) with a thickness of 2.4 nm exhibiting an excellent photothermal conversion performance were developed via a simple liquid phase ultrasonic stripping method. Following the loading of the photosensitizer agent chlorin e6 (Ce6) and subsequent modification with poly(allylamine hydrochloride) (PAH) and poly(acrylic acid) (PAA), a B@Ce6-PAH-PAA NS nanomedicine exhibiting dual modal imaging-guided cancer photothermal therapy (PTT) and photodynamic therapy (PDT) properties, as well as outstanding stability was developed. The suitable nano-size (120 nm) of B@Ce6-PAH-PAA NSs can allow drugs to target tumor tissue with an enhanced permeability and retention effect (EPR). The cytotoxicity experiments demonstrated that B@Ce6-PAH-PAA NSs exhibited good biocompatibility even at high concentrations. Furthermore, the in vitro and in vivo experiments showed the excellent synergistic therapeutic effect of this nanomedicine for PTT and PDT.
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Affiliation(s)
- Yong Kang
- State Key Laboratory of Biochemical Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
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10
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Zhang Z, Zhou M, Zhang T, Yang M, Yang Q, Yu J, Zhang Y. Few-Layer Borophene Prepared by Mechanical Resonance and Its Application in Terahertz Shielding. ACS APPLIED MATERIALS & INTERFACES 2020; 12:19746-19754. [PMID: 32186178 DOI: 10.1021/acsami.9b19407] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Once two-dimensional boron-based materials were forecasted, their excellent physical and chemical properties have realized attractive application value in the field of materials science. However, borophene could not exist independently and stably in nature. Molecular beam epitaxy is the only way being used currently for the preparation of borophene, which has low yield and harsh experimental installation conditions. Here, we propose the theory that few-layer borophene supported by silver nanoparticles can exist stably and large-scale preparation of few-layer borophene can be performed by mechanical resonance first. We have revealed that the structure of the prepared borophene is α-sheet and its thickness is less than 4 nm. The oxidation rate of borophene from the experiment is about 0.19, which indicates that the few-layer borophene possesses good structure stability. We have also studied the structure stability of borophene on silver nanoparticles by first principles calculation. The calculation proves that few-layer borophene can exist stably supported with silver nanoparticles. Furthermore, the terahertz shielding and stealth performance of the few-layer borophene have been explored. The maximum terahertz shielding effectiveness value of the prepared material could reach up to 50 and 21.5 dB for the reflection loss value in the broadband range of 0.1-2.7 THz. The large-scale preparation of few-layer borophene through the mechanical method makes it possible to study the properties of borophene and achieve low-cost large-scale applications, such as the study of terahertz shielding and stealth performance in the article, which facilitates the lightweight material design for terahertz shielding and stealth.
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Affiliation(s)
- Zhixun Zhang
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Ming Zhou
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
- Key Laboratory for Advanced Materials Processing Technology, Ministry of Education, Beijing 100084, China
| | - Taohong Zhang
- Department of Computer, School of Computer and Communication Engineering, University of Science and Technology Beijing (USTB), Beijing 100083, China
| | - Mingyang Yang
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Qingfeng Yang
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Jianwen Yu
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
| | - Yibo Zhang
- State Key Laboratory of Tribology, School of Mechanical Engineering, Tsinghua University, Beijing 100084, China
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11
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Zheng B, Xie Y, Deng Y, Wang Z, Lou Y, Qian Y, He J, Yu H. Highly Effective Work Function Reduction of α‐Borophene via Caesium Decoration: A First‐Principles Investigation. ADVANCED THEORY AND SIMULATIONS 2020. [DOI: 10.1002/adts.201900249] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Affiliation(s)
- Bing Zheng
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
| | - Ying Xie
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
| | - Ying‐yi Deng
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
| | - Zhao‐qi Wang
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
- College of Physics Sichuan University Chengdu 610065 P. R. China
| | - Yuan‐qing Lou
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
| | - Yin‐yin Qian
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
| | - Jing He
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
| | - Hai‐tao Yu
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science Heilongjiang University Harbin 150080 P. R. China
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12
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Shao L, Duan X, Li Y, Yuan Q, Gao B, Ye H, Ding P. A theoretical study of several fully hydrogenated borophenes. Phys Chem Chem Phys 2019; 21:7630-7634. [PMID: 30907915 DOI: 10.1039/c9cp00468h] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Several recently synthesized two dimensional borophene monolayers are almost all metallic with a strong anisotropic character, but their structural instability and the need to explore their novel physical properties are still ongoing issues. We present a detailed study of four fully hydrogenated borophenes (β12, δ3, δ5 and α borophanes) by first-principles calculations. According to phonon dispersion relations and ab initio molecular dynamics simulations, δ3 and δ5 borophanes are dynamically and thermally stable. The structural, mechanical, and electronic properties of δ3 and δ5 borophanes are analyzed. The results indicate that charge transfer from B to H atoms is crucial for the stability of two borophane phases. The HSE06 calculations predict that both δ3 and δ5 borophanes are semiconductors with indirect band gaps of 1.51 and 1.99 eV, respectively. These findings indicate that δ3 and δ5 borophanes are ideal for applications in nanoelectronics.
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Affiliation(s)
- Li Shao
- School of Materials Science and Engineering, Zhengzhou University of Aeronautics, Zhengzhou 450015, China.
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13
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Tian Y, Guo Z, Zhang T, Lin H, Li Z, Chen J, Deng S, Liu F. Inorganic Boron-Based Nanostructures: Synthesis, Optoelectronic Properties, and Prospective Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E538. [PMID: 30987178 PMCID: PMC6523509 DOI: 10.3390/nano9040538] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2019] [Revised: 03/20/2019] [Accepted: 03/21/2019] [Indexed: 11/16/2022]
Abstract
Inorganic boron-based nanostructures have great potential for field emission (FE), flexible displays, superconductors, and energy storage because of their high melting point, low density, extreme hardness, and good chemical stability. Until now, most researchers have been focused on one-dimensional (1D) boron-based nanostructures (rare-earth boride (REB₆) nanowires, boron nanowires, and nanotubes). Currently, two-dimensional (2D) borophene attracts most of the attention, due to its unique physical and chemical properties, which make it quite different from its corresponding bulk counterpart. Here, we offer a comprehensive review on the synthesis methods and optoelectronics properties of inorganic boron-based nanostructures, which are mainly concentrated on 1D rare-earth boride nanowires, boron monoelement nanowires, and nanotubes, as well as 2D borophene and borophane. This review paper is organized as follows. In Section I, the synthesis methods of inorganic boron-based nanostructures are systematically introduced. In Section II, we classify their optical and electrical transport properties (field emission, optical absorption, and photoconductive properties). In the last section, we evaluate the optoelectronic behaviors of the known inorganic boron-based nanostructures and propose their future applications.
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Affiliation(s)
- Yan Tian
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Zekun Guo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Tong Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Haojian Lin
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Zijuan Li
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
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14
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Yang Y, Hou H, Zou G, Shi W, Shuai H, Li J, Ji X. Electrochemical exfoliation of graphene-like two-dimensional nanomaterials. NANOSCALE 2018; 11:16-33. [PMID: 30525147 DOI: 10.1039/c8nr08227h] [Citation(s) in RCA: 91] [Impact Index Per Article: 15.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Unlike zero-dimensional quantum dots, one-dimensional nanowires/nanorods, and three-dimensional networks or even their bulk counterparts, the charge carriers in two-dimensional (2D) materials are confined along the thickness while being allowed to move along the plane. They have distinct characteristics like strong quantum confinement, tunable thickness, and high specific surface area, which makes them a promising candidate in a wide range of applications such as electronics, topological spintronic devices, energy storage, energy conversion, sensors, biomedicine, catalysis, and so on. After the discovery of the extraordinary properties of graphene, other graphene-like 2D materials have attracted a great deal of attention. Like graphene, to realize their potential applications, high efficiency and low cost industrial scale methods should be developed to produce high-quality 2D materials. The electrochemical methods usually performed under mild conditions are convenient, controllable, and suitable for mass production. In this review, we introduce the latest and most representative investigations on the fabrication of 2D monoelemental Xenes, 2D transition-metal dichalcogenides, and other important emerging 2D materials such as organic framework (MOF) nanosheets and MXenes through electrochemical exfoliation. The electrochemical exfoliation conditions of the bulk layered materials are discussed. The numerous factors which will affect the quality of the exfoliated 2D materials, the possible exfoliating mechanism and potential applications are summarized and discussed in detail. A summary of the discussion together with perspectives and challenges for the future of this emerging field is also provided in the last section.
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Affiliation(s)
- Yingchang Yang
- College of Material and Chemical Engineering, Tongren University, Tongren 554300, China and College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
| | - Hongshuai Hou
- College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
| | - Guoqiang Zou
- College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
| | - Wei Shi
- College of Material and Chemical Engineering, Tongren University, Tongren 554300, China
| | - Honglei Shuai
- College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
| | - Jiayang Li
- College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
| | - Xiaobo Ji
- College of Chemistry and Chemical Engineering, Central South University, Changsha 410083, China.
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15
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Zheng B, Qiao L, Yu HT, Wang QY, Xie Y, Qu CQ. Enhanced field-emission properties of buckled α-borophene by means of Li decoration: a first-principles investigation. Phys Chem Chem Phys 2018; 20:15139-15148. [PMID: 29789848 DOI: 10.1039/c8cp01048j] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this study, the structures and field-emission properties of Li-decorated buckled α-borophene (BBP) were investigated by first-principles density functional theory at the PW91 level. Using the computed binding energies, Hirshfeld- and electrostatic potential-derived charges, induced dipole moments, densities of states, and ionization potentials, we evaluated the influence of an applied electric field on the structural stability, work function, and field-emission current of the Li-decorated BBP nanostructures. Furthermore, we also explored the quantitative dependence of the emission current on the electric field, Li concentration, and molecular orbitals. The computed results indicated that increasing the electric field and Li concentration has a considerably positive effect on the field-emission performance of the Li-decorated BBPs. Besides advantages including small work functions and low ionization potentials, most remarkably, the field-emission current can be as high as 48.81 μA in Li4/BBP (supercell with 36 atoms only) under a rather small applied electric field of 0.05 V Å-1, which rivals the highest value of the graphene-BN nanocomposite among all the theoretical nanostructures presented to date. Our results highly support the fact that Li-decorated BBPs can be appealing field-emission cathode materials with an extremely high emission current.
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Affiliation(s)
- Bing Zheng
- Key Laboratory of Functional Inorganic Material Chemistry (Ministry of Education) and School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080, P. R. China.
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16
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Li H, Jing L, Liu W, Lin J, Tay RY, Tsang SH, Teo EHT. Scalable Production of Few-Layer Boron Sheets by Liquid-Phase Exfoliation and Their Superior Supercapacitive Performance. ACS NANO 2018; 12:1262-1272. [PMID: 29378394 DOI: 10.1021/acsnano.7b07444] [Citation(s) in RCA: 88] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Although two-dimensional boron (B) has attracted much attention in electronics and optoelectronics due to its unique physical and chemical properties, in-depth investigations and applications have been limited by the current synthesis techniques. Herein, we demonstrate that high-quality few-layer B sheets can be prepared in large quantities by sonication-assisted liquid-phase exfoliation. By simply varying the exfoliating solvent types and centrifugation speeds, the lateral size and thickness of the exfoliated B sheets can be controllably tuned. Additionally, the exfoliated few-layer B sheets exhibit excellent stability and outstanding dispersion in organic solvents without aggregates for more than 50 days under ambient conditions, owing to the presence of a solvent residue shell on the B sheet surface that provides excellent protection against air oxidation. Moreover, we also demonstrate the use of the exfoliated few-layer B sheets for high-performance supercapacitor electrode materials. This as-prepared device exhibits impressive electrochemical performance with a wide potential window of up to 3.0 V, excellent energy density as high as 46.1 Wh/kg at a power density of 478.5 W/kg, and excellent cycling stability with 88.7% retention of the initial specific capacitance after 6000 cycles. This current work not only demonstrates an effective strategy for the synthesis of the few-layer B sheets in a controlled manner but also makes the resulting materials promising for next-generation optoelectronics and energy storage applications.
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Affiliation(s)
- Hongling Li
- School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Lin Jing
- School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Wenwen Liu
- Department of Chemical Engineering, Waterloo Institute for Nanotechnology, University of Waterloo , Waterloo, Ontario, Canada N2L 3G1
| | - Jinjun Lin
- School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Roland Yingjie Tay
- Temasek Laboratories@NTU , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Siu Hon Tsang
- Temasek Laboratories@NTU , 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Edwin Hang Tong Teo
- School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
- School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
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17
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Yang J, Quhe R, Feng S, Zhang Q, Lei M, Lu J. Interfacial properties of borophene contacts with two-dimensional semiconductors. Phys Chem Chem Phys 2018; 19:23982-23989. [PMID: 28831475 DOI: 10.1039/c7cp04570k] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The interfacial properties of β12 phase borophene contacts with other common two-dimensional materials (transition-metal dichalcogenides, group IV-enes and group V-enes) have been systematically studied using a density functional theory (DFT) method. The zero tunneling barrier is found for all of the investigated β12 phase borophene contacts except for the case of β12 borophene/graphene. The chemically reactive properties and high work function (4.9 eV) of the stable β12 borophene lead to the formation of Ohmic contacts with silicene, germanene, stanene, black phosphorene, arsenene and antimonene. The advantage of the zero tunnel barrier remains when changing the borophene from the β12 phase to the Δ phase. Therefore, a high carrier injection rate is expected in these borophene contacts. Our study provides guidance on borophene for future two dimensional materials based device designs.
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Affiliation(s)
- Jie Yang
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China.
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18
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Kistanov AA, Cai Y, Zhou K, Srikanth N, Dmitriev SV, Zhang YW. Exploring the charge localization and band gap opening of borophene: a first-principles study. NANOSCALE 2018; 10:1403-1410. [PMID: 29302656 DOI: 10.1039/c7nr06537j] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Recently synthesized two-dimensional (2D) boron, borophene, exhibits a novel metallic behavior rooted in the s-p orbital hybridization, distinctively different from other 2D materials such as sulfides/selenides and semi-metallic graphene. This unique feature of borophene implies new routes for charge delocalization and band gap opening. Herein, using first-principles calculations, we explore the routes to localize the carriers and open the band gap of borophene via chemical functionalization, ribbon construction, and defect engineering. The metallicity of borophene is found to be remarkably robust against H- and F-functionalization and the presence of vacancies. Interestingly, a strong odd-even oscillation of the electronic structure with width is revealed for H-functionalized borophene nanoribbons, while an ultra-high work function (∼7.83 eV) is found for the F-functionalized borophene due to its strong charge transfer to the atomic adsorbates.
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Affiliation(s)
- Andrey A Kistanov
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore. and Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore 138632, Singapore.
| | - Yongqing Cai
- Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore 138632, Singapore.
| | - Kun Zhou
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798, Singapore.
| | | | - Sergey V Dmitriev
- Institute for Metals Superplasticity Problems, Russian Academy of Sciences, Ufa 450001, Russia and National Research Tomsk State University, Tomsk 634050, Russia
| | - Yong-Wei Zhang
- Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore 138632, Singapore.
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19
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Zhou YP, Jiang JW. Molecular dynamics simulations for mechanical properties of borophene: parameterization of valence force field model and Stillinger-Weber potential. Sci Rep 2017; 7:45516. [PMID: 28349983 PMCID: PMC5368563 DOI: 10.1038/srep45516] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/31/2016] [Accepted: 02/14/2017] [Indexed: 12/15/2022] Open
Abstract
While most existing theoretical studies on the borophene are based on first-principles calculations, the present work presents molecular dynamics simulations for the lattice dynamical and mechanical properties in borophene. The obtained mechanical quantities are in good agreement with previous first-principles calculations. The key ingredients for these molecular dynamics simulations are the two efficient empirical potentials developed in the present work for the interaction of borophene with low-energy triangular structure. The first one is the valence force field model, which is developed with the assistance of the phonon dispersion of borophene. The valence force field model is a linear potential, so it is rather efficient for the calculation of linear quantities in borophene. The second one is the Stillinger-Weber potential, whose parameters are derived based on the valence force field model. The Stillinger-Weber potential is applicable in molecular dynamics simulations of nonlinear physical or mechanical quantities in borophene.
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Affiliation(s)
- Yu-Ping Zhou
- Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai University, Shanghai, 200072, People's Republic of China
| | - Jin-Wu Jiang
- Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai University, Shanghai, 200072, People's Republic of China
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