A promising electrochemical sensor based on PVP-induced shape control of a hydrothermally synthesized layered structured vanadium disulfide for the sensitive detection of a sulfamethoxazole antibiotic

The presence of sulfamethoxazole (SMX) in natural waters has become a significant concern recently because of its detrimental effects on human health and the ecological environment. To address this issue, it is of utmost urgency to develop a reliable method that can determine SMX at ultra-low levels. In our research, we utilized PVP-induced shape control of a hydrothermal synthesis method to fabricate layer-like structured VS2, and employed it as an electrode modification material to prepare an electrochemical sensor for the sensitive determination of SMX. Thus, our prepared VS2 electrodes exhibited a linear range of 0.06-10.0 μM and a limit of detection (LOD) as low as 47.0 nM (S/N = 3) towards SMX detection. Additionally, the electrochemical sensor presented good agreement with the HPLC method, and afforded perfect recovery results (97.4-106.8%) in the practical analysis. The results validated the detection accuracy of VS2 electrodes, and demonstrated their successful applicability toward the sensitive determination of SMX in natural waters. In conclusion, this research provides a promising approach for the development of electrochemical sensors based on VS2 composite materials.

A novel electrochemical aptasensor based on eco-friendly synthesized titanium dioxide nanosheets and polyethyleneimine grafted reduced graphene oxide for ultrasensitive and selective detection of ciprofloxacin

Developing a rapid, sensitive, and efficient analytical method for the trace-level determination of highly concerning antibiotic ciprofloxacin (CIP) is desirable to guarantee the safety of human health and ecosystems. In this work, a novel electrochemical aptasensor based on polyethyleneimine grafted reduced graphene oxide and titanium dioxide (rGO/PEI/TiO2) nanocomposite was constructed for ultrasensitive and selective detection of CIP. Through the in-situ electrochemical oxidation of Ti3C2Tx nanosheets, TiO2 nanosheets with good electrochemical response were prepared in a more convenient and eco-friendly method. The prepared TiO2 nanosheets promote charge transferring on electrode interface, and [Fe(CN)6]3-/4- as electrochemical active substance can be electrostatically attracted by rGO/PEI. Thus, electrochemical detection signal of the aptasensor variates a lot after specific binding with CIP, achieving working dynamic range of 0.003-10.0 μmol L-1, low detection limit down to 0.7 nmol L-1 (S/N = 3) and selectivity towards other antibiotics. Additionally, the aptasensor exhibited good agreement with HPLC method at 95% confidence level, and achieved good recoveries (96.8-106.3%) in real water samples, demonstrating its suitable applicability of trace detection of CIP in aquatic environment.

Effect of intercalated molybdenum atoms on structure and electrochemical properties of Mo1+xS2synthesized by hydrothermal method

As an alternative anode to graphene, molybdenum disulfide (MoS₂) has attracted much attention due to its layered structure and high specific capacity. Moreover, MoS₂can be synthesized by hydrothermal method with low cost and the size of its layer spacing can be controlled. In this work, the results of experiment and calculation proved that the presence of intercalated Mo atoms, leading to the expansion of MoS₂layer spacing and weakening of Mo-S bonding. For the electrochemical properties, the presence of intercalated Mo atoms causes the lower reduction potentials for the Li⁺intercalation and Li₂S formation. In addition, the effective reduction of diffusion resistance and charge transfer resistance in Mo_1+xS₂leads to the acquisition of high specific capacity for battery applications.

Highly Sensitive and Selective Dopamine Determination in Real Samples Using Au Nanoparticles Decorated Marimo-like Graphene Microbead-Based Electrochemical Sensors

A sensitive and selective electrochemical dopamine (DA) sensor has been developed using gold nanoparticles decorated marimo-like graphene (Au NP/MG) as a modifier of the glassy carbon electrode (GCE). Marimo-like graphene (MG) was prepared by partial exfoliation on the mesocarbon microbeads (MCMB) through molten KOH intercalation. Characterization via transmission electron microscopy confirmed that the surface of MG is composed of multi-layer graphene nanowalls. The graphene nanowalls structure of MG provided abundant surface area and electroactive sites. Electrochemical properties of Au NP/MG/GCE electrode were investigated by cyclic voltammetry and differential pulse voltammetry techniques. The electrode exhibited high electrochemical activity towards DA oxidation. The oxidation peak current increased linearly in proportion to the DA concentration in a range from 0.02 to 10 μM with a detection limit of 0.016 μM. The detection selectivity was carried out with the presence of 20 μM uric acid in goat serum real samples. This study demonstrated a promising method to fabricate DA sensor-based on MCMB derivatives as electrochemical modifiers.

Formation of a vertical SnSe/SnSe2 p-n heterojunction by NH3 plasma-induced phase transformation

Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- and p-type doping. In this work, we demonstrate the fabrication of vertical p-n heterojunctions made of p-type tin monoselenide (SnSe) and n-type tin diselenide (SnSe₂). The p-n heterojunction is created in a single flake by the NH₃-plasma-assisted phase transformation from SnSe₂ to SnSe. We show that the transformation rate and crystal quality strongly depend on plasma parameters like plasma power, temperature, partial pressure, NH₃ flow, and duration of plasma treatment. With optimal plasma parameters, the full transformation of SnSe₂ flakes into SnSe is achieved within a few seconds. The crystal quality and the topography of the fabricated SnSe-SnSe₂ heterostructures are investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy. The formation of a p-n junction is verified by current-voltage measurements.

Polymorphic Phosphorus Applied to Alkali-Ion Battery Electrodes

The polymorphic phosphorus materials such as amorphous red and black ones have been used as the anodes for alkali-ion batteries. As the research field of 2D materials is pioneered, the fibrous red and violet phosphorus begin to be investigated and predicted for various devices. Meanwhile, they are not only applied to the active materials of electrodes but also the formation of protective layers for battery application. This article briefly introduces the primary allotropes of phosphorus, their research progress, and their potential for the application of alkali-ion batteries. Next, the recent studies concerning their applications of electrodes and protective layers for alkali-ion batteries are discussed in detail. Finally, the merits and drawbacks of preparation approaches, the strategies for improvement of battery performance, and the urgent challenges as well as possible solutions for future development of alkali-ion batteries using the electrodes or protective layers made from phosphorus materials, are summarized.

The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection

The intrinsic and electronic properties of elemental two-dimensional (2D) materials beyond graphene are first introduced in this review. Then the studies concerning the application of gas sensing using these 2D materials are comprehensively reviewed. On the whole, the carbon-, nitrogen-, and sulfur-based gases could be effectively detected by using most of them. For the sensing of organic vapors, the borophene, phosphorene, and arsenene may perform it well. Moreover, the G-series nerve agents might be efficiently monitored by the bismuthene. So far, there is still challenge on the material preparation due to the instability of these 2D materials under atmosphere. The synthesis or growth of materials integrated with the technique of surface protection should be associated with the device fabrication to establish a complete process for particular application. This review provides a complete and methodical guideline for scientists to further research and develop the hazardous gas sensors of these 2D materials in order to achieve the purpose of environmental protection.

Ultrafast Exciton Dynamics in Scalable Monolayer MoS2 Synthesized by Metal Sulfurization

Excitons in monolayer transition metal dichalcogenides (TMDs) have exceptionally large binding energies and dominate the optical properties of materials. Exploring the relaxation behavior of excitons is crucial for understanding the fundamental physics as well as the performance of TMD-based optoelectronic devices. However, ultrafast carrier dynamics is sensitive to the structural defects and surface conditions of TMDs, depending on the growth or transfer process. Here, we utilized pump-probe transient absorption (TA) spectroscopy with a white-light probe to investigate the dynamics of excitons in monolayer MoS₂ synthesized by the metal sulfurization method. The sulfurization method was used for the fabrication of large-scale, continuous, and uniform thin films with a controllable number of layers. The excitation dynamics of the wafer-size monolayer MoS₂ is found to be comparable to that of monolayer MoS₂ flakes grown by chemical vapor deposition (CVD). The dominant processes of carrier relaxation in the monolayer MoS₂ are exciton-exciton annihilation (hundreds of femtoseconds), the trapping of the excitons by surface states (a few picoseconds), and interband carrier-phonon scattering (tens of picoseconds). Moreover, the induced absorption due to mid-gap defects, which is often observed for samples fabricated by growth methods, such as CVD, is not observed for our continuous and uniform monolayer films. Understanding the charge carrier dynamics of the exciton in the scalable and uniform monolayer MoS₂ can provide physical insights that are valuable in the design and development of complex 2D devices.

Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors

The effects of space radiation on the structural and electrical properties of MoS₂ field effect transistors (FETs) were investigated. The 1 MeV electronically equivalent International Space Station (ISS) track was used to apply fluence equivalent to the orbital for 10 (1.0 × 10¹² cm^-2) and 30 years (3.0 × 10¹² cm^-2) using the AP8 and AE8 models. X-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectra were recorded before and after irradiation. Electron irradiation produced strong desulfurization effects in MoS₂ FETs. The PL spectra before and after irradiation did not change significantly, while the [Formula: see text] and A_1g Raman modes were red- and blue-shifted, respectively. The XPS results demonstrated a strong desulfurization effect of the electron beam on MoS₂. This reduction indicates a much higher amount of irradiation-induced S vacancies compared to Mo vacancies. The electrical characteristics of the device were measured before and after irradiation. The increase in the channel leakage current after irradiation was attributed to the oxide trapping positive charges. MoS₂ FETs irradiated by the electron-beam demonstrated a decreased current. This phenomenon can be attributed to the combination of the states at the SiO₂/MoS₂ interfaces and Coulomb scattering. Our study provides a deeper understanding of the influence of 1 MeV electron-beam irradiation on MoS₂-based nano-electronic devices for future space applications.

Direct Synthesis of Large-Scale Multilayer TaSe2 on SiO2/Si Using Ion Beam Technology

The multilayer 1T-TaSe₂ is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO₂/Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe₂. Temperature-dependent resistivity reveals that the multilayer 1T-TaSe₂ obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe₂ and HfSe₂ and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.

Non-layered Ti2N synthesized by plasma process for the anodes of lithium-ion batteries

ε-Ti₂N synthesized by an N₂ plasma-assisted process is first applied to lithium-ion batteries with good performance.

Defect-Induced Exchange Bias in a Single SrRuO3 Layer

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO₃ layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ∼0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

The advent of multilayer antimonene nanoribbons with room temperature orange light emission

Multilayer antimonene nanoribbons with room temperature orange light emission uniformly distributed on InSb were synthesized by the plasma-assisted process. The bandgap opening was caused by the quantum confinement effect of the nanoribbon structure and the turbostratic stacking of antimonene layers. This attractive two-dimensional material, whose band structure is proper for applications of transistors and light-emitting diodes, was first synthesized.

Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

The vertical Al₂Se₃/MoSe₂ heterojunction on sapphire was first fabricated via an ion beam-assisted process.

Fabrication of Multilayer Borophene on Insulator Structure

The X-ray photoelectron spectroscopy spectra indicate the peak of BB bonds, implying that the elemental boron structure might be formed after the process. The multilayer β-borophene is directly observed by transmission electron microscopy (TEM) and the lattice parameters are valid. The middle SiNx layer also can be identified in TEM image. Furthermore, the 1.61 eV bandgap of the multilayer β-borophene is announced in this study.

Synthesis of nonepitaxial multilayer silicene assisted by ion implantation

Nonepitaxial multilayer silicene with a lonsdaleite structure was synthesized from a 4H-SiC substrate using an implantation-assisted process. An sp(3)-like bonding signal was fitted in a lonsdaleite Si XPS spectrum. The multilayer silicene was directly observed and the derived interplanar distances were found to be nearly consistent with the theoretical values.

Enhanced Conversion Efficiency of Cu(In,Ga)Se2 Solar Cells via Electrochemical Passivation Treatment

Defect control in Cu(In,Ga)Se2 (CIGS) materials, no matter what the defect type or density, is a significant issue, correlating directly to PV performance. These defects act as recombination centers and can be briefly categorized into interface recombination and Shockley-Read-Hall (SRH) recombination, both of which can lead to reduced PV performance. Here, we introduce an electrochemical passivation treatment for CIGS films that can lower the oxygen concentration at the CIGS surface as observed by X-ray photoelectron spectrometer analysis. Temperature-dependent J-V characteristics of CIGS solar cells reveal that interface recombination is suppressed and an improved rollover condition can be achieved following our electrochemical treatment. As a result, the surface defects are passivated, and the power conversion efficiency performance of the solar cell devices can be enhanced from 4.73 to 7.75%.

Plasma-Assisted Synthesis of High-Mobility Atomically Layered Violet Phosphorus

Two-dimensional layered materials such as graphene, transition metal dichalcogenides, and black phosphorus have demonstrated outstanding properties due to electron confinement as the thickness is reduced to atomic scale. Among the phosphorus allotropes, black phosphorus, and violet phosphorus possess layer structure with the potential to be scaled down to atomically thin film. For the first time, the plasma-assisted synthesis of atomically layered violet phosphorus has been achieved. Material characterization supports the formation of violet phosphorus/InN over InP substrate where the layer structure of violet phosphorus is clearly observed. The identification of the crystal structure and lattice constant ratifies the formation of violet phosphorus indeed. The critical concept of this synthesis method is the selective reaction induced by different variations of Gibbs free energy (ΔG) of reactions. Besides, the Hall mobility of the violet phosphorus on the InP substrate greatly increases over the theoretical values of InP bulk material without much reduction in the carrier concentration, suggesting that the mobility enhancement results from the violet phosphorus layers. Furthermore, this study demonstrates a low-cost technique with high compatibility to synthesize the high-mobility atomically layered violet phosphorus and open the space for the study of the fundamental properties of this intriguing material as a new member of the fast growing family of 2D crystals.

Direct formation of large-scale multi-layered germanene on Si substrate

Germanene layers with lonsdaleite structure has been synthesized from a SiGe thin film using a N₂ plasma-assisted process in this investigation.

Scalable graphene synthesised by plasma-assisted selective reaction on silicon carbide for device applications

Graphene, a two-dimensional material with honeycomb arrays of carbon atoms, has shown outstanding physical properties that make it a promising candidate material for a variety of electronic applications. To date, several issues related to the material synthesis and device fabrication need to be overcome. Despite the fact that large-area graphene films synthesised by chemical vapour deposition (CVD) can be grown with relatively few defects, the required transfer process creates wrinkles and polymer residues that greatly reduce its performance in device applications. Graphene synthesised on silicon carbide (SiC) has shown outstanding mobility and has been successfully used to develop ultra-high frequency transistors; however, this fabrication method is limited due to the use of costly ultra-high vacuum (UHV) equipment that can reach temperatures over 1500 °C. Here, we show a simple and novel approach to synthesise graphene on SiC substrates that greatly reduces the temperature and vacuum requirements and allows the use of equipment commonly used in the semiconductor processing industry. In this work, we used plasma treatment followed by annealing in order to obtain large-scale graphene films from bulk SiC. After exposure to N2 plasma, the annealing process promotes the reaction of nitrogen ions with Si and the simultaneous condensation of C on the surface of SiC. Eventually, a uniform, large-scale, n-type graphene film with remarkable transport behaviour on the SiC wafer is achieved. Furthermore, graphene field effect transistors (FETs) with high carrier mobilities on SiC were also demonstrated in this study.