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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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2
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Jafarpour M, Nüesch F, Heier J, Abdolhosseinzadeh S. Functional Ink Formulation for Printing and Coating of Graphene and Other 2D Materials: Challenges and Solutions. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022] Open
Affiliation(s)
- Mohammad Jafarpour
- Laboratory for Functional Polymers Swiss Federal Laboratories for Materials Science and Technology (Empa) 8600 Dübendorf Switzerland
- Institute of Materials Science and Engineering Swiss Federal Institute of Technology Lausanne (EPFL) 1015 Lausanne Switzerland
| | - Frank Nüesch
- Laboratory for Functional Polymers Swiss Federal Laboratories for Materials Science and Technology (Empa) 8600 Dübendorf Switzerland
- Institute of Materials Science and Engineering Swiss Federal Institute of Technology Lausanne (EPFL) 1015 Lausanne Switzerland
| | - Jakob Heier
- Laboratory for Functional Polymers Swiss Federal Laboratories for Materials Science and Technology (Empa) 8600 Dübendorf Switzerland
| | - Sina Abdolhosseinzadeh
- Laboratory for Functional Polymers Swiss Federal Laboratories for Materials Science and Technology (Empa) 8600 Dübendorf Switzerland
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3
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Wang G, Ding Y, Guan Y, Wang Y, Yang L. Tunable Electronic Properties of Few-Layer Tellurene under In-Plane and Out-of-Plane Uniaxial Strain. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:875. [PMID: 35269362 PMCID: PMC8912431 DOI: 10.3390/nano12050875] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/02/2022] [Accepted: 03/04/2022] [Indexed: 01/27/2023]
Abstract
Strain engineering is a promising and fascinating approach to tailoring the electrical and optical properties of 2D materials, which is of great importance for fabricating excellent nano-devices. Although previous theoretical works have proved that the monolayer tellurene has desirable mechanical properties with the capability of withstanding large deformation and the tunable band gap and mobility conductance induced by in-plane strain, the effects of in-plane and out-of-plane strains on the properties of few-layer tellurene in different phases should be explored deeply. In this paper, calculations based on first-principles density functional theory were performed to predict the variation in crystal structures and electronic properties of few-layer tellurene, including the α and β phases. The analyses of mechanical properties show that few-layer α-Te can be more easily deformed in the armchair direction than β-Te owing to its lower Young's modulus and Poisson's ratio. The α-Te can be converted to β-Te by in-plane compressive strain. The variations in band structures indicate that the uniaxial strain can tune the band structures and even induce the semiconductor-to-metal transition in both few-layer α-Te and β-Te. Moreover, the compressive strain in the zigzag direction is the most feasible scheme due to the lower transition strain. In addition, few-layer β-Te is more easily converted to metal especially for the thicker flakes considering its smaller band gap. Hence, the strain-induced tunable electronic properties and semiconductor-to-metal transition of tellurene provide a theoretical foundation for fabricating metal-semiconductor junctions and corresponding nano-devices.
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Affiliation(s)
- Genwang Wang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China; (G.W.); (Y.D.); (Y.G.)
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Ye Ding
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China; (G.W.); (Y.D.); (Y.G.)
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yanchao Guan
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China; (G.W.); (Y.D.); (Y.G.)
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yang Wang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China; (G.W.); (Y.D.); (Y.G.)
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Lijun Yang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China; (G.W.); (Y.D.); (Y.G.)
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
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4
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Liu C, Ye Z, Wei X, Mao S. Recent advances in field‐effect transistor sensing strategies for fast and highly efficient analysis of heavy metal ions. ELECTROCHEMICAL SCIENCE ADVANCES 2021. [DOI: 10.1002/elsa.202100137] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022] Open
Affiliation(s)
- Chengbin Liu
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
| | - Ziwei Ye
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
| | - Xiaojie Wei
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
| | - Shun Mao
- College of Environmental Science and Engineering, State Key Laboratory of Pollution Control and Resource Reuse Tongji University 1239 Siping Road Shanghai 200092 China
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5
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Ben J, Liu X, Wang C, Zhang Y, Shi Z, Jia Y, Zhang S, Zhang H, Yu W, Li D, Sun X. 2D III-Nitride Materials: Properties, Growth, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006761. [PMID: 34050555 DOI: 10.1002/adma.202006761] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2020] [Revised: 12/31/2020] [Indexed: 06/12/2023]
Abstract
2D III-nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III-nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin-based devices, and gas detectors. Although the developments of 2D h-BN materials have been successful, the fabrication of other 2D III-nitride materials, such as 2D h-AlN, h-GaN, and h-InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III-nitride materials are summarized. The properties of the 2D III-nitride materials are mainly obtained by first-principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III-nitride materials is focused on 2D h-BN and h-AlN, as the developments of 2D h-GaN and h-InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h-BN materials; however, many potential applications are cited for the entire range of 2D III-nitride materials. Finally, future research directions and prospects in this field are also discussed.
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Affiliation(s)
- Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xinke Liu
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Cong Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yupeng Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Yuping Jia
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Shanli Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Wenjie Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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6
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He L, Lian P, Zhu Y, Zhao J, Mei Y. Heteroatom‐Doped
Black Phosphorus and Its Application: A Review. CHINESE J CHEM 2021. [DOI: 10.1002/cjoc.202000330] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Lu‐dong He
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Pei‐chao Lian
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Yuan‐zhi Zhu
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Jun‐ping Zhao
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
| | - Yi Mei
- Faculty of Chemical Engineering, Kunming University of Science and Technology, Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus‐based Materials Kunming Yunnan 650500 China
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7
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Lim J, Kadyrov A, Jeon D, Choi Y, Bae J, Lee S. Contact Engineering of Vertically Grown ReS 2 with Schottky Barrier Modulation. ACS APPLIED MATERIALS & INTERFACES 2021; 13:7529-7538. [PMID: 33544572 DOI: 10.1021/acsami.0c20108] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Forming metal contact with low contact resistance is essential for the development of electronics based on layered van der Waals materials. ReS2 is a semiconducting transition metal dichalcogenide (TMD) with an MX2 structure similar to that of MoS2. While most TMDs grow parallel to the substrate when synthesized using chemical vapor deposition (CVD), ReS2 tends to orient itself vertically during growth. Such a feature drastically increases the surface area and exposes chemically active edges, making ReS2 an attractive layered material for energy and sensor applications. However, the contact resistances of vertically grown materials are known to be relatively high, compared to those of common 2H-phase TMDs, such as MoS2. Most reported methods for lowering the contact resistance have been focused on exfoliated 2H-phase materials with only a few devices tested, and few works on distorted T-phase materials exist. Moreover, nearly all reported studies have been conducted on only a few devices with mechanically exfoliated fl Most reported methods for lowering the contact resistance have been 2 contacts was modulated by conformally coating a thin tunneling interlayer between the metal and the dendritic ReS2 film. Over a hundred devices were tested, and contact resistances were extracted for large-scale statistical analysis. Importantly, we compared various known materials and techniques for lowering contact resistance and found an optimized method. Finally, the reductions in barrier height were directly correlated with exponential reductions in contact resistance and increases in drive-current by almost 2 orders of magnitude.
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Affiliation(s)
- Jinho Lim
- Semiconductor Device & Integration Laboratory, Department of Electronic Engineering, Kyunghee University, Yongin 17104, Korea
| | - Arman Kadyrov
- Semiconductor Device & Integration Laboratory, Department of Electronic Engineering, Kyunghee University, Yongin 17104, Korea
| | - Dasom Jeon
- Semiconductor Device & Integration Laboratory, Department of Electronic Engineering, Kyunghee University, Yongin 17104, Korea
| | - Yongsu Choi
- Semiconductor Device & Integration Laboratory, Department of Electronic Engineering, Kyunghee University, Yongin 17104, Korea
| | - Junho Bae
- Semiconductor Device & Integration Laboratory, Department of Electronic Engineering, Kyunghee University, Yongin 17104, Korea
| | - Seunghyun Lee
- Semiconductor Device & Integration Laboratory, Department of Electronic Engineering, Kyunghee University, Yongin 17104, Korea
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8
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Kaewmaraya T, Ngamwongwan L, Moontragoon P, Jarernboon W, Singh D, Ahuja R, Karton A, Hussain T. Novel green phosphorene as a superior chemical gas sensing material. JOURNAL OF HAZARDOUS MATERIALS 2021; 401:123340. [PMID: 32652419 DOI: 10.1016/j.jhazmat.2020.123340] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2020] [Revised: 06/13/2020] [Accepted: 06/27/2020] [Indexed: 06/11/2023]
Abstract
Green phosphorus and its monolayer variant, green phosphorene (GreenP), are the recent members of two-dimensional (2D) phosphorus polymorphs. The new polymorph possesses the high stability, tunable direct bandgap, exceptional electronic transport, and directionally anisotropic properties. All these unique features could reinforce it the new contender in a variety of electronic, optical, and sensing devices. Herein, we present gas-sensing characteristics of pristine and defected GreenP towards major environmental gases (i. e., NH3, NO, NO2, CO, CO2, and H2O) using combination of the density functional theory, statistical thermodynamic modeling, and the non-equilibrium Green's function approach (NEGF). The calculated adsorption energies, density of states (DOS), charge transfer, and Crystal Orbital Hamiltonian Population (COHP) reveal that NO, NO2, CO, CO2 are adsorbed on GreenP, stronger than both NH3 and H2O, which are weakly physisorbed via van der Waals interactions. Furthermore, substitutional doping by sulfur can selectively intensify the adsorption towards crucial NO2 gas because of the enhanced charge transfer between p orbitals of the dopant and the analyte. The statistical estimation of macroscopic measurable adsorption densities manifests that the significant amount of NO2 molecules can be practically adsorbed at ambient temperature even at the ultra-low concentration of part per billion (ppb). In addition, the current-voltage (I-V) characteristics of S-doped GreenP exhibit a variation upon NO2 exposure, indicating the superior sensitivity in sensing devices. Our work sheds light on the promising application of the novel GreenP as promising chemical gas sensors.
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Affiliation(s)
- T Kaewmaraya
- Integrated Nanotechnology Research Center, Department of Physics, Khon Kaen University, Khon Kaen, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Research Network of NANOTEC- KKU (RNN), Khon Kaen University, Khon Kaen, 40002, Thailand.
| | - L Ngamwongwan
- School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand
| | - P Moontragoon
- Integrated Nanotechnology Research Center, Department of Physics, Khon Kaen University, Khon Kaen, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Research Network of NANOTEC- KKU (RNN), Khon Kaen University, Khon Kaen, 40002, Thailand
| | - W Jarernboon
- Integrated Nanotechnology Research Center, Department of Physics, Khon Kaen University, Khon Kaen, Thailand; Institute of Nanomaterials Research and Innovation for Energy (IN-RIE), Research Network of NANOTEC- KKU (RNN), Khon Kaen University, Khon Kaen, 40002, Thailand
| | - D Singh
- Condensed Matter Theory Group, Department of Physics and Astronomy, Box 516, Uppsala University, S-75120, Uppsala, Sweden
| | - R Ahuja
- Condensed Matter Theory Group, Department of Physics and Astronomy, Box 516, Uppsala University, S-75120, Uppsala, Sweden; Applied Materials Physics, Department of Materials and Engineering, Royal Institute of Technology (KTH), S-100 44, Stockholm, Sweden
| | - A Karton
- School of Molecular Sciences, The University of Western Australia, Perth, WA 6009, Australia
| | - T Hussain
- School of Molecular Sciences, The University of Western Australia, Perth, WA 6009, Australia
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9
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Wan D, Huang H, Wang Z, Liu X, Liao L. Recent advances in long-term stable black phosphorus transistors. NANOSCALE 2020; 12:20089-20099. [PMID: 33006355 DOI: 10.1039/d0nr05204c] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional black phosphorus (BP) presents extensive exciting properties attributed to the high mobility and non-dangling bonds uniform surface with simultaneously obtained atomically ultrathin body and offer opportunities beyond the traditional materials. BP has thus emerged as a unique material in the post-silicon era for low-power electronics and photo-electronics. Tremendous efforts have been invested in fully developing the extreme potentiality of BP for future nanoelectronics. However, the accompanying challenges, especially the poor stability that originates from the active surface, in fabricating large-area BP transistors with comparable electrical performance to silicon electronics prevent their practical application. Herein, we review the progress of recent works that demonstrated the feasibility of enhancing the stability of BP electronics, and identify the opportunities and challenges in developing BP as atomically thin semiconductors for next-generation nanoelectronics.
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Affiliation(s)
- Da Wan
- School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, 430081, China
| | - Hao Huang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Zhongzheng Wang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xingqiang Liu
- Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Lei Liao
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
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10
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Zhou W, Chen J, Bai P, Guo S, Zhang S, Song X, Tao L, Zeng H. Two-Dimensional Pnictogen for Field-Effect Transistors. RESEARCH 2020; 2019:1046329. [PMID: 31912022 PMCID: PMC6944228 DOI: 10.34133/2019/1046329] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/13/2019] [Accepted: 09/07/2019] [Indexed: 11/06/2022]
Abstract
Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.
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Affiliation(s)
- Wenhan Zhou
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jiayi Chen
- Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Pengxiang Bai
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shiying Guo
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shengli Zhang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xiufeng Song
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Li Tao
- Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Haibo Zeng
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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11
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Huang H, Jiang B, Zou X, Zhao X, Liao L. Black phosphorus electronics. Sci Bull (Beijing) 2019; 64:1067-1079. [PMID: 36659766 DOI: 10.1016/j.scib.2019.02.015] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2018] [Revised: 01/23/2019] [Accepted: 02/12/2019] [Indexed: 01/21/2023]
Abstract
As the scaling of silicon-based field-effect transistors has approached its physical limits, the search for alternative channel materials for future logic devices has attracted much attention. The discovery of graphene has unveiled another material family with layered structures called two-dimensional (2D) materials. Black phosphorus (BP), the most stable allotrope of phosphorus, was introduced as a new type of 2D material in 2014. Thanks to its high mobility, in-plane anisotropy and direct band gap, BP is considered to be a promising candidate for next-generation electronic and optoelectronic devices. Numerous studies have demonstrated the beneficial effects of introducing BP for device architectures. Herein, we present a review outlining recent progress towards high performance BP-based transistors. This review starts with the fundamental properties of BP, including its crystal structure, bandgap, and direct current (DC) and radio-frequency (RF) characteristics, followed by a detailed description of the modulation and application of those properties, involving anisotropy, functionalization and superlattices. Furthermore, we also discuss device design for high-performance transistors, with particular emphasis on interface engineering and device stability. Finally, we offer our perspective on the future of BP electronics, aiming to benefit colleagues who are interested in this exciting research field.
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Affiliation(s)
- Hao Huang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Bei Jiang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Xingzhong Zhao
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Lei Liao
- School of Physics and Technology, Wuhan University, Wuhan 430072, China; Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
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12
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Wang Z, Lu J, Wang J, Li J, Du Z, Wu H, Liao L, Chu PK, Yu XF. Air-stable n-doped black phosphorus transistor by thermal deposition of metal adatoms. NANOTECHNOLOGY 2019; 30:135201. [PMID: 30630138 DOI: 10.1088/1361-6528/aafd68] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In this work, a simple and effective thermal deposition method is described to enhance the stability and achieve n-doping of two-dimensional black phosphorus (BP), resulting in the successful fabrication of logic devices. By doping with Al adatoms, the stability of BP against oxidation is enhanced and the transfer characteristics are maintained for several days under ambient conditions. Furthermore, the resulting BP is n-doping showing a negative-shifted threshold voltage and enhanced electron mobility. The mechanism of Al-doping is investigated by first-principles calculation and Al induces a downward shift of the conduction band minimum and increases the Fermi level. In addition, integration of bare BP and Al-doped BP enables the fabrication of various logic devices such as inverters and p-n diodes. This work reveals a facile strategy to simultaneously enhance the stability and regulate the conductivity of BP by doping with metal adatoms boding well for device applications.
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Affiliation(s)
- Zhongzheng Wang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, People's Republic of China. Center for Biomedical Materials and Interfaces, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
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13
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Yang N, Li L, Li J, Wei Z. Modifying the sensibility of nonmetal-doped phosphorene by local or global properties. Phys Chem Chem Phys 2019; 21:4899-4906. [DOI: 10.1039/c8cp07851c] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The dopant atom X can modify the sensibility of X-doped phosphorene by tuning the electronic properties of X-doped phosphorene surfaces effectively. According to the adsorption strength and the amount of charge transfer between the adsorption species and X-doped phosphorene surfaces, the adsorption species can be roughly divided into three types.
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Affiliation(s)
- Na Yang
- The State Key Laboratory of Power Transmission Equipment & System Security and New Technology
- Chongqing Key Laboratory of Chemical Process for Clean Energy and Resource Utilization
- School of Chemistry and Chemical Engineering
- Chongqing University
- Chongqing 400044
| | - Li Li
- The State Key Laboratory of Power Transmission Equipment & System Security and New Technology
- Chongqing Key Laboratory of Chemical Process for Clean Energy and Resource Utilization
- School of Chemistry and Chemical Engineering
- Chongqing University
- Chongqing 400044
| | - Jing Li
- The State Key Laboratory of Power Transmission Equipment & System Security and New Technology
- Chongqing Key Laboratory of Chemical Process for Clean Energy and Resource Utilization
- School of Chemistry and Chemical Engineering
- Chongqing University
- Chongqing 400044
| | - Zidong Wei
- The State Key Laboratory of Power Transmission Equipment & System Security and New Technology
- Chongqing Key Laboratory of Chemical Process for Clean Energy and Resource Utilization
- School of Chemistry and Chemical Engineering
- Chongqing University
- Chongqing 400044
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14
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Yao J, Zheng Z, Yang G. Ultrasensitive 2D/3D Heterojunction Multicolor Photodetectors: A Synergy of Laterally and Vertically Aligned 2D Layered Materials. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38166-38172. [PMID: 30360099 DOI: 10.1021/acsami.8b10396] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this work, a p-type 2D SnS nanofilm containing both laterally and vertically aligned components was successfully deposited on an n-type Si substrate through pulsed-laser deposition. Energy band analysis demonstrates a typical type-II band alignment between SnS and Si, which is beneficial to the separation of photogenerated carriers. The as-fabricated p-SnS/n-Si heterojunction photodetector exhibits multicolor photoresponse from ultraviolet to near-infrared (370-1064 nm). Importantly, the device manifests a high responsivity of 273 A/W, a large external quantum efficiency of 4.2 × 104%, and an outstanding detectivity of 7× 1013 Jones (1 Jones = 1 cm Hz1/2 W-1), which far outperforms state-of-the-art 2D/3D heterojunction photodetectors incorporating either laterally or vertically aligned 2D layered materials (2DLMs). The splendid performance is ascribed to lateral SnS's dangling-bond-free interface induced efficient carrier separation, vertical SnS's high-speed carrier transport, and collision ionization induced carrier multiplication. In sum, the current work depicts a unique landscape for revolutionary design and advancement of 2DLM-based heterojunction photodetectors.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-sen University , Guangzhou 510275 , Guangdong , P. R. China
| | - Zhaoqiang Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-sen University , Guangzhou 510275 , Guangdong , P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering , Sun Yat-sen University , Guangzhou 510275 , Guangdong , P. R. China
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15
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Sun M, Chou JP, Gao J, Cheng Y, Hu A, Tang W, Zhang G. Exceptional Optical Absorption of Buckled Arsenene Covering a Broad Spectral Range by Molecular Doping. ACS OMEGA 2018; 3:8514-8520. [PMID: 31458980 PMCID: PMC6644618 DOI: 10.1021/acsomega.8b01192] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2018] [Accepted: 07/20/2018] [Indexed: 05/27/2023]
Abstract
Using density functional theory calculations, we demonstrate that the electronic and optical properties of a buckled arsenene monolayer can be tuned by molecular doping. Effective p-type doping of arsenene can be realized by adsorption of tetracyanoethylene and tetracyanoquinodimethane (TCNQ) molecules, while n-doped arsenene can be obtained by adsorption of tetrathiafulvalene molecules. Moreover, owing to the charge redistribution, a dipole moment is formed between each organic molecule and arsenene, and this dipole moment can significantly tune the work function of arsenene to values within a wide range of 3.99-5.57 eV. Adsorption of TCNQ molecules on pristine arsenene can significantly improve the latter's optical absorption in a broad (visible to near-infrared) spectral range. According to the AM 1.5 solar spectrum, two-fold enhancement is attained in the efficiency of solar-energy utilization, which can lead to great opportunities for the use of TCNQ-arsenene in renewable energy. Our work clearly demonstrates the key role of molecular doping in the application of arsenene in electronic and optoelectronic components, renewable energy, and laser protection.
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Affiliation(s)
- Minglei Sun
- School
of Mechanical Engineering, Southeast University, 79 Suyuan Avenue, Nanjing 211189, China
- Institute
of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Jyh-Pin Chou
- Department
of Mechanical and Biomedical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong 999077, China
| | - Junfeng Gao
- Institute
of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Yuan Cheng
- Institute
of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Alice Hu
- Department
of Mechanical and Biomedical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong 999077, China
| | - Wencheng Tang
- School
of Mechanical Engineering, Southeast University, 79 Suyuan Avenue, Nanjing 211189, China
| | - Gang Zhang
- Institute
of High Performance Computing, A*STAR, 1 Fusionopolis Way, Singapore 138632, Singapore
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16
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Liu Y, Duan X, Huang Y, Duan X. Two-dimensional transistors beyond graphene and TMDCs. Chem Soc Rev 2018; 47:6388-6409. [PMID: 30079920 DOI: 10.1039/c8cs00318a] [Citation(s) in RCA: 126] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Two-dimensional semiconductors (2DSCs) have attracted considerable attention as atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of a single- or few-atom-thick, covalently bonded lattice, in which all carriers are confined in their atomically thin channel with superior gate controllability and greatly suppressed OFF-state current, in contrast to typical bulk semiconductors plagued by short channel effects and heat generation from static power. Additionally, 2DSCs are free of surface dangling bonds that plague traditional semiconductors, and hence exhibit excellent electronic properties at the limit of single atom thickness. Therefore, 2DSCs can offer significant potential for the ultimate transistor scaling to single atomic body thickness. Earlier studies of graphene transistors have been limited by the zero bandgap and low ON-OFF ratio of graphene, and transition metal dichalcogenide (TMDC) devices are typically plagued by insufficient carrier mobility. To this end, considerable efforts have been devoted towards searching for new 2DSCs with optimum electronic properties. Within a relatively short period of time, a large number of 2DSCs have been demonstrated to exhibit unprecedented characteristics or unique functionalities. Here we review the recent efforts and progress in exploring novel 2DSCs beyond graphene and TMDCs for ultra-thin body transistors, discussing the merits, limits and prospects of each material.
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Affiliation(s)
- Yuan Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, School of Physics and Electronics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China.
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17
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Wang L, Huang L, Tan WC, Feng X, Chen L, Ang KW. Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics. NANOSCALE 2018; 10:14359-14367. [PMID: 30020303 DOI: 10.1039/c8nr03207f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Many, black phosphorus (BP) based field-effect transistors, homojunctions, and vertical van der Waals structures have been developed for optoelectronic applications, with few studies being conducted on exploring the potential of their naturally formed heterojunctions. Here, we report a novel thickness-modulated, gate-tunable BP heterojunction phototransistor for multiple purposes and high performance optoelectronics. Despite its thickness of less than 5 nm, the device, whose fabrication spares the need for split-gate or chemical doping or vertical stacking requirements, achieves an excellent photoresponsivity of 383 A W-1 at 1550 nm under zero gate bias, which is among the best photoresponse performance of all-BP-based photodetectors in this spectral range. Furthermore, it exhibits a shot-noise-limited noise equivalent power (NEPshot) of less than 10-2 pW Hz-1/2, making it very promising for ultra-low power detection. Additionally, owing to the heterojunction-induced built-in electric field, the device can be readily used for infrared photovoltaic devices in the absence of source-drain bias (Vd), a feature that is distinctively superior to traditional phototransistors. The multifunctionality demonstrated in our BP heterojunction transistor paves the way towards realizing tunable improved performance optoelectronics based on 2D materials platform.
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Affiliation(s)
- Lin Wang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore.
| | - Li Huang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore.
| | - Wee Chong Tan
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore.
| | - Xuewei Feng
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore.
| | - Li Chen
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore.
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore.
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18
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Liu H, Hu K, Yan D, Chen R, Zou Y, Liu H, Wang S. Recent Advances on Black Phosphorus for Energy Storage, Catalysis, and Sensor Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1800295. [PMID: 29782658 DOI: 10.1002/adma.201800295] [Citation(s) in RCA: 104] [Impact Index Per Article: 17.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2018] [Revised: 02/05/2018] [Indexed: 05/22/2023]
Abstract
As a new type of 2D semiconductor, black phosphorus (BP) possesses high charge-carrier mobility and theoretical capacity, thickness-dependent bandgap, and anisotropic structure, which has attracted tremendous attention since early 2014. To explore its full application in all aspects, studies based on BP nanostructures are swiftly expanding from the electronic field to energy storage and even biochemistry. The mechanism and application of BP in Li-/Na-ion battery anodes, oxygen evolution reaction/hydrogen evolution reaction catalysis, photocatalytic hydrogen production, and selective sensors are summarized. Based on the solid research on this topic, feasible improvements and constructive suggestions regarding these four fields are put forward.
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Affiliation(s)
- Hanwen Liu
- State Key Laboratory of Chemo/Bio-Sensing and Chemometrics, Provincial Hunan Key Laboratory for Graphene Materials and Devices, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Kui Hu
- State Key Laboratory of Chemo/Bio-Sensing and Chemometrics, Provincial Hunan Key Laboratory for Graphene Materials and Devices, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Dafeng Yan
- State Key Laboratory of Chemo/Bio-Sensing and Chemometrics, Provincial Hunan Key Laboratory for Graphene Materials and Devices, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Ru Chen
- State Key Laboratory of Chemo/Bio-Sensing and Chemometrics, Provincial Hunan Key Laboratory for Graphene Materials and Devices, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yuqin Zou
- State Key Laboratory of Chemo/Bio-Sensing and Chemometrics, Provincial Hunan Key Laboratory for Graphene Materials and Devices, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Hongbo Liu
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Shuangyin Wang
- State Key Laboratory of Chemo/Bio-Sensing and Chemometrics, Provincial Hunan Key Laboratory for Graphene Materials and Devices, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
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19
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Guo J, Liu Y, Ma Y, Zhu E, Lee S, Lu Z, Zhao Z, Xu C, Lee SJ, Wu H, Kovnir K, Huang Y, Duan X. Few-Layer GeAs Field-Effect Transistors and Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705934. [PMID: 29611222 DOI: 10.1002/adma.201705934] [Citation(s) in RCA: 44] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2017] [Revised: 01/01/2018] [Indexed: 05/25/2023]
Abstract
The family of 2D semiconductors (2DSCs) has grown rapidly since the first isolation of graphene. The emergence of each 2DSC material brings considerable excitement for its unique electrical, optical, and mechanical properties, which are often highly distinct from their 3D counterparts. To date, studies of 2DSC are majorly focused on group IV (e.g., graphene, silicene), group V (e.g., phosphorene), or group VIB compounds (transition metal dichalcogenides, TMD), and have inspired considerable effort in searching for novel 2DSCs. Here, the first electrical characterization of group IV-V compounds is presented by investigating few-layer GeAs field-effect transistors. With back-gate device geometry, p-type behaviors are observed at room temperature. Importantly, the hole carrier mobility is found to approach 100 cm2 V-1 s-1 with ON-OFF ratio over 105 , comparable well with state-of-the-art TMD devices. With the unique crystal structure the few-layer GeAs show highly anisotropic optical and electronic properties (anisotropic mobility ratio of 4.8). Furthermore, GeAs based transistor shows prominent and rapid photoresponse to 1.6 µm radiation with a photoresponsivity of 6 A W-1 and a rise and fall time of ≈3 ms. This study of group IV-V 2DSC materials greatly expands the 2D family, and can enable new opportunities in functional electronics and optoelectronics based on 2DSCs.
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Affiliation(s)
- Jian Guo
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Yuan Liu
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Yue Ma
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Enbo Zhu
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Shannon Lee
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
- Department of Chemistry, Iowa State University, and Ames Laboratory, Ames, IA, 50011, USA
| | - Zixuan Lu
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Zipeng Zhao
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Changhao Xu
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Sung-Joon Lee
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Hao Wu
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Kirill Kovnir
- Department of Chemistry, Iowa State University, and Ames Laboratory, Ames, IA, 50011, USA
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA
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20
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Li P, Zhang D, Jiang C, Zong X, Cao Y. Ultra-sensitive suspended atomically thin-layered black phosphorus mercury sensors. Biosens Bioelectron 2017. [DOI: 10.1016/j.bios.2017.06.027] [Citation(s) in RCA: 64] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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