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Lu SJ, Tang L, Xiao Z, Zhang M, Guo W, Tan M, Wan Y, Xiao FX, Lin Y. Synthesis of High-Quality Bulk Single-Crystal Black Phosphorus by the Circulating Vapor Growth Approach. Inorg Chem 2024; 63:11092-11101. [PMID: 38843593 DOI: 10.1021/acs.inorgchem.4c00655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
Black phosphorus (BP), a promising two-dimensional (2D) layered semiconductor material, has gained enormous attention due to its impressive properties over the past several years. Although plenty of methods have been developed to synthesize high-quality BP, most of the currently available BP materials still suffer from unsatisfactory crystallization, purity, and stability in air, hindering their practical application. A facile approach to synthesizing ultrahigh-quality single-crystal BP is of significance to shed light on the nature of 2D semiconductor materials and their massive application. In this work, we present the facile and efficient circulating vapor growth approach to growing bulk single-crystal BP. The as-grown BP material features high crystallinity and ultrahigh purity (higher than 99.999 at %), exceeding those of all the previously reported and some commercially available BP crystals. It also maintains excellent stability in air and water after 15 consecutive days of test. Moreover, the as-synthesized BP material features good thermal stability, oxidation resistance, and excellent electrical properties, as well. This study provides a new approach for the fabrication of ultrahigh-quality BP material and thus promotes its application.
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Affiliation(s)
- Shao-Jun Lu
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian 350108, China
| | - Ling Tang
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, Fujian 361021, China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Zechen Xiao
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, Fujian 361021, China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Mo Zhang
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, Fujian 361021, China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Wei Guo
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, Fujian 361021, China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Mingwu Tan
- Institute of Sustainability for Chemicals, Energy and Environment, Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island 627833, Singapore
| | - Yan Wan
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, Fujian 361021, China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Fang-Xing Xiao
- College of Materials Science and Engineering, Fuzhou University, New Campus, Minhou, Fujian 350108, China
| | - Yangming Lin
- Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute, Chinese Academy of Sciences, Xiamen, Fujian 361021, China
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
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2
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Wang H, Song Y, Huang G, Ding F, Ma L, Tian N, Qiu L, Li X, Zhu R, Huang S, Yan H, Chen XH, Ding L, Zheng C, Ruan W, Zhang Y. Seeded growth of single-crystal black phosphorus nanoribbons. NATURE MATERIALS 2024; 23:470-478. [PMID: 38418924 DOI: 10.1038/s41563-024-01830-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.
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Affiliation(s)
- Hongya Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
- Shanghai Qi Zhi Institute, Shanghai, China
- Shanghai Research Center for Quantum Sciences, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
| | - Yichen Song
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.
- Shanghai Qi Zhi Institute, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
| | - Guangyi Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
| | - Feng Ding
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
| | - Liyang Ma
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
- Shanghai Research Center for Quantum Sciences, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
| | - Ning Tian
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
- Shanghai Qi Zhi Institute, Shanghai, China
- Shanghai Research Center for Quantum Sciences, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
| | - Lu Qiu
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
- Department of Mechanical Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
| | - Xian Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
| | - Ruimin Zhu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
- Shanghai Qi Zhi Institute, Shanghai, China
- Shanghai Research Center for Quantum Sciences, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
| | - Shenyang Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
| | - Xian Hui Chen
- Key Laboratory of Strongly Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei, China.
| | - Liping Ding
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.
- School of Electronic Information and Artificial Intelligence, Shaanxi University of Science & Technology, Xi'an, China.
| | - Changlin Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.
| | - Wei Ruan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China
- Shanghai Research Center for Quantum Sciences, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
| | - Yuanbo Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.
- Shanghai Qi Zhi Institute, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
- New Cornerstone Science Laboratory, Fudan University, Shanghai, China.
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3
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Hu B, Zhang T, Wang K, Wang L, Zhang Y, Gao S, Ye X, Zhou Q, Jiang S, Li X, Shi F, Chen C. Narrow Directed Black Phosphorus Nanoribbons Produced by A Reformative Mechanical Exfoliation Approach. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207538. [PMID: 36890779 DOI: 10.1002/smll.202207538] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 01/19/2023] [Indexed: 06/18/2023]
Abstract
Black phosphorus nanoribbons (PNRs) are ideal candidates for constructing electronic and optoelectronic devices owing to their unique structure and high bandgap tunability. However, the preparation of high-quality narrow PNRs aligned along the same direction is very challenging. Here, a reformative mechanical exfoliation approach combining tape and polydimethylsiloxane (PDMS) exfoliations to fabricate high-quality, narrow, and directed PNRs with smooth edges for the first time is developed. In this method, partially-exfoliated PNRs are first formed on thick black phosphorus (BP) flakes via the tape exfoliation and further peeled off to obtain separated PNRs via the PDMS exfoliation. The prepared PNRs have widths from a dozen to hundreds of nanometers (down to 15 nm) and a mean length of 18 µm. It is found that the PNRs can align along a same direction and the length directions of directed PNRs are along the zigzag direction. The formation of PNRs is attributed to that the BP prefers to be unzipped along the zigzag direction and has an appropriate magnitude of interaction force with the PDMS substrate. The fabricated PNR/MoS2 heterojunction diode and PNR field-effect transistor exhibit good device performance. This work provides a new pathway to achieve high-quality, narrow, and directed PNRs for electronic and optoelectronic applications.
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Affiliation(s)
- Bei Hu
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Teng Zhang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Kunchan Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Long Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Yanming Zhang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Shengguang Gao
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Xiaowo Ye
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Qingping Zhou
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Shenghao Jiang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Xinyue Li
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Fangyuan Shi
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Changxin Chen
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
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4
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Chen C, Yin Y, Zhang R, Yuan Q, Xu Y, Zhang Y, Chen J, Zhang Y, Li C, Wang J, Li J, Fei L, Yu Q, Zhou Z, Zhang H, Cheng R, Dong Z, Xu X, Pan A, Zhang K, He J. Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release. NATURE MATERIALS 2023:10.1038/s41563-023-01516-1. [PMID: 36959500 DOI: 10.1038/s41563-023-01516-1] [Citation(s) in RCA: 25] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Accepted: 02/24/2023] [Indexed: 05/04/2023]
Abstract
Black phosphorus (BP), a fascinating semiconductor with high mobility and a tunable direct bandgap, has emerged as a candidate beyond traditional silicon-based devices for next-generation electronics and optoelectronics. The ability to grow large-scale, high-quality BP films is a prerequisite for scalable integrated applications but has thus far remained a challenge due to unmanageable nucleation events. Here we develop a sustained feedstock release strategy to achieve subcentimetre-size single-crystal BP films by facilitating the lateral growth mode under a low nucleation rate. The as-grown single-crystal BP films exhibit high crystal quality, which brings excellent field-effect electrical properties and observation of pronounced Shubnikov-de Haas oscillations, with high mobilities up to ~6,500 cm2 V-1 s-1 at low temperatures. We further extend this approach to the growth of single-crystal BP alloy films, which broaden the infrared emission regime of BP from 3.7 μm to 6.9 μm at room temperature. This work will greatly facilitate the development of high-performance electronics and optoelectronics based on BP family materials.
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Affiliation(s)
- Cheng Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Yuling Yin
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Rencong Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghong Yuan
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China
- State Key Laboratory of Pulsed Power Laser Technology, College of Electronic Engineering, National University of Defense Technology, Hefei, China
| | - Jie Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Yan Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Chang Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Junyong Wang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Jie Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Linfeng Fei
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, China
| | - Qiang Yu
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Zheng Zhou
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Huisheng Zhang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Zhuo Dong
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
| | - Kai Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China.
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5
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Yu Q, Guo K, Dai Y, Deng H, Wang T, Wu H, Xu Y, Shi X, Wu J, Zhang K, Zhou P. Black phosphorus for near-infrared ultrafast lasers in the spatial/temporal domain. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:503001. [PMID: 34544055 DOI: 10.1088/1361-648x/ac2862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2021] [Accepted: 09/20/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted extensive interests due to their wide range of electronic and optical properties. After continuous and extensive research, black phosphorus (BP), a novel member of 2D layered semiconductor material, benefit for the unique in-plane anisotropic structure, controllable direct bandgap characteristic, and high charge carrier mobility, has attracted tremendous attention and successfully applied in ultrafast pulse generation. This article, which focuses on near-infrared ultrafast laser demonstration of BP, present discussion of preparation methods for high quality BP nanosheet, various BP based ultrafast lasers in the spatial/temporal domain, and the future research needs.
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Affiliation(s)
- Qiang Yu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Kun Guo
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yongping Dai
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Haiqin Deng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Tao Wang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Hanshuo Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Yijun Xu
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Xinyao Shi
- Institute of Quantum Sensing of Wuxi, Wuxi, People's Republic of China
| | - Jian Wu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
| | - Kai Zhang
- I-Lab & Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, People's Republic of China
| | - Pu Zhou
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, People's Republic of China
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Cheng J, Gao L, Li T, Mei S, Wang C, Wen B, Huang W, Li C, Zheng G, Wang H, Zhang H. Two-Dimensional Black Phosphorus Nanomaterials: Emerging Advances in Electrochemical Energy Storage Science. NANO-MICRO LETTERS 2020; 12:179. [PMID: 34138158 PMCID: PMC7770910 DOI: 10.1007/s40820-020-00510-5] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2020] [Accepted: 07/23/2020] [Indexed: 05/19/2023]
Abstract
Two-dimensional black phosphorus (2D BP), well known as phosphorene, has triggered tremendous attention since the first discovery in 2014. The unique puckered monolayer structure endows 2D BP intriguing properties, which facilitate its potential applications in various fields, such as catalyst, energy storage, sensor, etc. Owing to the large surface area, good electric conductivity, and high theoretical specific capacity, 2D BP has been widely studied as electrode materials and significantly enhanced the performance of energy storage devices. With the rapid development of energy storage devices based on 2D BP, a timely review on this topic is in demand to further extend the application of 2D BP in energy storage. In this review, recent advances in experimental and theoretical development of 2D BP are presented along with its structures, properties, and synthetic methods. Particularly, their emerging applications in electrochemical energy storage, including Li-/K-/Mg-/Na-ion, Li-S batteries, and supercapacitors, are systematically summarized with milestones as well as the challenges. Benefited from the fast-growing dynamic investigation of 2D BP, some possible improvements and constructive perspectives are provided to guide the design of 2D BP-based energy storage devices with high performance.
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Affiliation(s)
- Junye Cheng
- Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Lingfeng Gao
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Tian Li
- Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Shan Mei
- Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19104, USA
| | - Cong Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Bo Wen
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Weichun Huang
- Nantong Key Lab of Intelligent and New Energy Materials, College of Chemistry and Chemical Engineering, Nantong University, Nantong, 226019, Jiangsu, People's Republic of China
| | - Chao Li
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Guangping Zheng
- Department of Mechanical Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Hao Wang
- Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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7
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Shi F, Huang K, Feng S. Recent Advances on Black Phosphorus Based Electrocatalysts for Water‐Splitting. ChemCatChem 2020. [DOI: 10.1002/cctc.201902288] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Affiliation(s)
- Fangbing Shi
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry International Joint Laboratory of Nano-Micro Architecture Chemistry Institution College of ChemistryJilin University Changchun 130012 P.R. China
| | - Keke Huang
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry International Joint Laboratory of Nano-Micro Architecture Chemistry Institution College of ChemistryJilin University Changchun 130012 P.R. China
| | - Shouhua Feng
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry International Joint Laboratory of Nano-Micro Architecture Chemistry Institution College of ChemistryJilin University Changchun 130012 P.R. China
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8
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Wang Y, He M, Ma S, Yang C, Yu M, Yin G, Zuo P. Low-Temperature Solution Synthesis of Black Phosphorus from Red Phosphorus: Crystallization Mechanism and Lithium Ion Battery Applications. J Phys Chem Lett 2020; 11:2708-2716. [PMID: 32191477 DOI: 10.1021/acs.jpclett.0c00746] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
As a thermodynamically stable semiconductor material, black phosphorus (BP) has potential application in the field of energy storage and conversion. The preparation of black phosphorus is still limited to the laboratory, which is far from adequate to meet the requirements of future industrial applications. Here, the gram-scale black phosphorus is synthesized in the ethylenediamine medium using a 120-200 °C low-temperature recyclable liquid phase method directly from red phosphorus. A crystallization mechanism from red to black phosphorus based on FTIR, XPS, and DFT calculations is proposed. Black phosphorus as the anode material for lithium ion batteries is superior in discharge specific capacity, rate capability, and cycling stability in comparison with red phosphorus. The facile low-temperature synthesis of BP by the ethylenediamine-assisted liquid phase process will facilitate the extended application of BP in the field of energy storage and conversion.
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Affiliation(s)
- Yang Wang
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Mengxue He
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Shaobo Ma
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Chenhui Yang
- State Key Laboratory of Urban Water Resource and Environment, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Miao Yu
- State Key Laboratory of Urban Water Resource and Environment, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Geping Yin
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
| | - Pengjian Zuo
- Institute of Advanced Chemical Power Source, School of Chemical Engineering and Technology, Harbin Institute of Technology, Harbin 150001, China
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Xu Y, Shi Z, Shi X, Zhang K, Zhang H. Recent progress in black phosphorus and black-phosphorus-analogue materials: properties, synthesis and applications. NANOSCALE 2019; 11:14491-14527. [PMID: 31361285 DOI: 10.1039/c9nr04348a] [Citation(s) in RCA: 103] [Impact Index Per Article: 20.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Black phosphorus (BP), a novel two-dimensional (2D) layered semiconductor material, has attracted tremendous attention since 2014 due to its prominent carrier mobility, thickness-dependent direct bandgap and in-plane anisotropic physical properties. BP has been considered as a promising material for many applications, such as in transistors, photonics, optoelectronics, sensors, batteries and catalysis. However, the development of BP was hampered by its instability under ambient conditions, as well as by the lack of methods to synthesize large-area and high quality 2D nanofilms. Recently, some BP-analogue materials such as binary phosphides (MPx), transition metal phosphorus trichalcogenides (MPX3), and 2D group V (pnictogens) and 2D group VI materials have attracted increasing interest for their unique and stable structures, and excellent physical and chemical properties. This article, which focuses on BP and BP-analogue materials, will present their crystal structure, properties, synthesis methods and applications. Also the similarity and difference between BP and BP-analogue materials will be discussed, and the presentation of the future opportunities and challenges of the materials are included at the end.
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Affiliation(s)
- Yijun Xu
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China.
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Izquierdo N, Myers JC, Seaton NCA, Pandey SK, Campbell SA. Thin-Film Deposition of Surface Passivated Black Phosphorus. ACS NANO 2019; 13:7091-7099. [PMID: 31145589 DOI: 10.1021/acsnano.9b02385] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A single-step, direct silicon-substrate growth of black phosphorus (BP) crystals is achieved in a self-contained short-way transport technique under low-pressure conditions (<1.5 MPa). A 115 nm-thick BP hero single crystal is formed with lateral dimensions of 10 × 85 μm. The synthesis proceeds with Sn, SnI4, and red phosphorus and has a well-defined phosphorus phase dependency on the SnI4 concentration. Furthermore, in situ Sn passivation of BP occurs. This allows long-term stability with no sign of any degradation after 4 months of exposure to ambient conditions. Single-crystal BP flakes and multigrain flakes with high- and low-angle grain boundaries are achieved. Electron backscatter diffraction determined crystal growth to be independent of the substrate, which is further supported by successful growth on various substrates, including sapphire, silicon nitride, silicon, and silicon oxide. Cross-sectional transmission electron microscopy of a single crystal flake provides valuable insight into the growth mechanism. Elemental Sn encapsulates BP crystals, and crystalline SnI x inclusions are found to be scattered throughout the BP crystal. It is suggested that SnI x inclusions may provide the dominant mechanism for seeding vertical growth. IR absorption measurements for thin and bulk BP recipes show an equal response below Eg dominated by free carrier absorption. FET devices fabricated from thin-film and bulk BP recipes show improved device performance compared to unpassivated BP films of equal thickness with an on/off current ratio >102.
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Affiliation(s)
- Nezhueyotl Izquierdo
- Department of Chemical Engineering and Materials Science , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Jason C Myers
- Characterization Facility , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Nicholas C A Seaton
- Characterization Facility , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Sushil K Pandey
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Stephen A Campbell
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
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