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Li B, Xia F, Du B, Zhang S, Xu L, Su Q, Zhang D, Yang J. 2D Halide Perovskites for High-Performance Resistive Switching Memory and Artificial Synapse Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2310263. [PMID: 38647431 PMCID: PMC11187899 DOI: 10.1002/advs.202310263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 03/21/2024] [Indexed: 04/25/2024]
Abstract
Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high-density, low-cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic properties including large light absorption coefficient, fast ion migration, long carrier diffusion length, low trap density, high defect tolerance. Among MHPs, 2D halide perovskites have exotic layered structure and great environment stability as compared with 3D counterparts. Herein, recent advances of 2D MHPs for the RS memories and artificial synapses realms are comprehensively summarized and discussed, as well as the layered structure properties and the related physical mechanisms are presented. Furthermore, the current issues and developing roadmap for the next-generation 2D MHPs RS memories and artificial synapse are elucidated.
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Affiliation(s)
- Bixin Li
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
- Shaanxi Institute of Flexible Electronics (SIFE)Northwestern Polytechnical University (NPU)Xi'anShaanxi710072China
- School of PhysicsCentral South University932 South Lushan RoadChangshaHunan410083China
| | - Fei Xia
- Shaanxi Institute of Flexible Electronics (SIFE)Northwestern Polytechnical University (NPU)Xi'anShaanxi710072China
| | - Bin Du
- School of Materials Science and EngineeringXi'an Polytechnic UniversityXi'an710048China
| | - Shiyang Zhang
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
| | - Lan Xu
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
| | - Qiong Su
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
| | - Dingke Zhang
- School of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Junliang Yang
- School of PhysicsCentral South University932 South Lushan RoadChangshaHunan410083China
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Muthu C, Resmi AN, Ajayakumar A, Ravindran NEA, Dayal G, Jinesh KB, Szaciłowski K, Vijayakumar C. Self-Assembly of Delta-Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304787. [PMID: 38243886 DOI: 10.1002/smll.202304787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Revised: 12/02/2023] [Indexed: 01/22/2024]
Abstract
In the quest for advanced memristor technologies, this study introduces the synthesis of delta-formamidinium lead iodide (δ-FAPbI3) nanoparticles (NPs) and their self-assembly into nanorods (NRs). The formation of these NRs is facilitated by iodide vacancies, promoting the fusion of individual NPs at higher concentrations. Notably, these NRs exhibit robust stability under ambient conditions, a distinctive advantage attributed to the presence of capping ligands and a crystal lattice structured around face-sharing octahedra. When employed as the active layer in resistive random-access memory devices, these NRs demonstrate exceptional bipolar switching properties. A remarkable on/off ratio (105) is achieved, surpassing the performances of previously reported low-dimensional perovskite derivatives and α-FAPbI3 NP-based devices. This enhanced performance is attributed to the low off-state current owing to the reduced number of halide vacancies, intrinsic low dimensionality, and the parallel alignment of NRs on the FTO substrate. This study not only provides significant insights into the development of superior materials for memristor applications but also opens new avenues for exploring low-dimensional perovskite derivatives in advanced electronic devices.
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Affiliation(s)
- Chinnadurai Muthu
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
| | - A N Resmi
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - Avija Ajayakumar
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
| | - N E Aswathi Ravindran
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
| | - G Dayal
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - K B Jinesh
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - Konrad Szaciłowski
- Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Mickiewicza 30, Krakow, 30 059, Poland
| | - Chakkooth Vijayakumar
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
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Ali S, Ullah MA, Raza A, Iqbal MW, Khan MF, Rasheed M, Ismail M, Kim S. Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2443. [PMID: 37686950 PMCID: PMC10489950 DOI: 10.3390/nano13172443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 08/23/2023] [Accepted: 08/27/2023] [Indexed: 09/10/2023]
Abstract
This review article attempts to provide a comprehensive review of the recent progress in cerium oxide (CeO2)-based resistive random-access memories (RRAMs). CeO2 is considered the most promising candidate because of its multiple oxidation states (Ce3+ and Ce4+), remarkable resistive-switching (RS) uniformity in DC mode, gradual resistance transition, cycling endurance, long data-retention period, and utilization of the RS mechanism as a dielectric layer, thereby exhibiting potential for neuromorphic computing. In this context, a detailed study of the filamentary mechanisms and their types is required. Accordingly, extensive studies on unipolar, bipolar, and threshold memristive behaviors are reviewed in this work. Furthermore, electrode-based (both symmetric and asymmetric) engineering is focused for the memristor's structures such as single-layer, bilayer (as an oxygen barrier layer), and doped switching-layer-based memristors have been proved to be unique CeO2-based synaptic devices. Hence, neuromorphic applications comprising spike-based learning processes, potentiation and depression characteristics, potentiation motion and synaptic weight decay process, short-term plasticity, and long-term plasticity are intensively studied. More recently, because learning based on Pavlov's dog experiment has been adopted as an advanced synoptic study, it is one of the primary topics of this review. Finally, CeO2-based memristors are considered promising compared to previously reported memristors for advanced synaptic study in the future, particularly by utilizing high-dielectric-constant oxide memristors.
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Affiliation(s)
- Sarfraz Ali
- Department of Physics, Riphah International University, Lahore Campus, 13-KM Raiwand Road, Lahore 54000, Pakistan
| | | | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples ‘Federico II’, Piazzale Tecchio, 80, 80125 Naples, Italy
| | - Muhammad Waqas Iqbal
- Department of Physics, Riphah International University, Lahore Campus, 13-KM Raiwand Road, Lahore 54000, Pakistan
| | - Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Maria Rasheed
- Department of Advanced Battery Convergence Engineering, Dongguk University, Seoul 04620, Republic of Korea
| | - Muhammad Ismail
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea;
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea;
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Song K, Du L, Yue G, Li T, Li H, Zheng S, Chen Z, Zheng H. Simultaneously elevating the resistive switching level and ambient-air-stability of 3D perovskite (TAZ-H)PbBr 3-based memory device by encapsulating into polyvinylpyrrolidone. J Colloid Interface Sci 2023; 642:408-420. [PMID: 37023513 DOI: 10.1016/j.jcis.2023.03.192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/19/2023] [Accepted: 03/29/2023] [Indexed: 04/08/2023]
Abstract
The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H)PbBr3 (TAZ-H+ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr3/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 °C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr3@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (105.9: 103.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 °C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr3)nn- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr3@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr3)nn- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)nn+ chain in 3D channels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memorizers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.
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Affiliation(s)
- Kaiyue Song
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Lingling Du
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Guoli Yue
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Tao Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Haohong Li
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China.
| | - Shoutian Zheng
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Zhirong Chen
- Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
| | - Huidong Zheng
- Qingyuan Innovation Laboratory, Quanzhou, Fujian 362801, China; Fujian Engineering Research Center of Advanced Manufacturing Technology for Fine Chemicals, College of Chemical Engineering, Fuzhou University, Fuzhou, Fujian 350108, China.
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Li D, Dong X, Cheng P, Song L, Wu Z, Chen Y, Huang W. Metal Halide Perovskite/Electrode Contacts in Charge-Transporting-Layer-Free Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203683. [PMID: 36319474 PMCID: PMC9798992 DOI: 10.1002/advs.202203683] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Metal halide perovskites have drawn substantial interest in optoelectronic devices in the past decade. Perovskite/electrode contacts are crucial for constructing high-performance charge-transporting-layer-free perovskite devices, such as solar cells, field-effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge-transporting-layer-free perovskite devices. Meanwhile, for perovskite/metal contacts, some critical interfacial physical and chemical processes are reported, including band bending, interface dipoles, metal halogenation, and perovskite decomposition induced by metal electrodes. Thus, a systematic summary of the role of metal halide perovskite/electrode contacts on device performance is essential. This review summarizes and discusses charge carrier dynamics, electronic band engineering, electrode corrosion, electrochemical metallization and dissolution, perovskite decomposition, and interface engineering in perovskite/electrode contacts-based electronic devices for a comprehensive understanding of the contacts. The physicochemical, electronic, and morphological properties of various perovskite/electrode contacts, as well as relevant engineering techniques, are presented. Finally, the current challenges are analyzed, and appropriate recommendations are put forward. It can be expected that further research will lead to significant breakthroughs in their application and promote reforms and innovations in future solid-state physics and materials science.
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Affiliation(s)
- Deli Li
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Fujian cross Strait Institute of Flexible Electronics (Future Technologies)Fujian Normal UniversityFuzhou350117P. R. China
| | - Xue Dong
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Peng Cheng
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Lin Song
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Zhongbin Wu
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced MaterialsNanjing University of Posts and TelecommunicationsNanjing210023P. R. China
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Yu C, He JH, Lu JM. Ion-in-Conjugation: A Promising Concept for Multifunctional Organic Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204023. [PMID: 36285771 DOI: 10.1002/smll.202204023] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 09/11/2022] [Indexed: 06/16/2023]
Abstract
Most organic semiconductors (OSCs) consist of conjugated skeletons with flexible peripheral chains. Their weak intermolecular interactions from dispersion and induction forces result in environmental susceptibilities and are unsuitable for many multifunctional applications where direct exposure to external environments is unavoidable, such as gas absorption, chemical sensing, and catalysis. To exploit the advantages of inorganic semiconductors in OSCs, ion-in-conjugation (IIC) materials are proposed. An IIC material refers to any conjugated material (molecules, polymers, and crystals) in Kekule's structural formula containing stoichiometric ionic states in its conjugated backbone in the electronic ground state. In this review, the definitions, structures, synthesis, properties, and applications of IIC materials are described briefly. Four types of IIC material, including zwitterionic conjugated molecules/polymers, conjugated ionic dyes, π-d conjugated molecules and polymers, and coordinatively doped polymers, are reported. Their applications in gas sensing, humidity sensing, resistive memory devices, and thermal/photo-/electro-catalysis are demonstrated. The challenges and opportunities for future research are also discussed. It is expected that this work will inspire the design of new organic electronic information materials.
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Affiliation(s)
- Chuang Yu
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
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Shen J, Guan P, Jiang A, Fan W, Li S, Liu Y, Xu S, Cao S. A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories. ACS APPLIED MATERIALS & INTERFACES 2022; 14:44652-44664. [PMID: 36125291 DOI: 10.1021/acsami.2c10562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The intergranular interface modification of organic-inorganic hybrid perovskites (OHP) is an important issue to regulate the flexibility, stability, and resistive switching (RS) performance of resistive random-access memories (RRAMs). A novel strategy of polymer additives for OHP intergranular interface modification is explored in this work with the polyanionic backbone to improve the distribution of cage-shaped cavity molecules at the perovskite grain boundaries. Specifically speaking, poly(1-adamantylammonium acrylate) (PADAm) is first synthesized through the acid-base reaction of polyacrylic acid with 1-adamantylamine to simultaneously realize the introduction of a cage-shaped cavity molecule and the polyanionic backbone. Herein, organic ammonium cations 1-adamantylammonium (ADNH3+) in PADAm are applied as the cage-shaped cavity molecules to tune the dielectric property by being anchored at the perovskite grain boundaries. Meanwhile, polyacrylic anions in PADAm play the role of the polyanionic backbone to produce the more uniform distribution of ADNH3+. Simultaneously, the flexibility and stability of OHP RRAM devices are also improved due to the introduction of the polyanionic backbone. Consequently, the 4% ADNH3I-modified planar device exhibits the stable nonvolatile RS behavior with an on/off ratio of ∼104, even with one-month exposure under an ambient environment. Importantly, the introduction of PADAm in the flexible fibrous crosspoint of functional fiber Al@MAPbI3:PADAm and bare Al fiber further increases the on/off ratio to 108 due to the effectively improved distribution of hollow cage-shaped ADNH3+ at the perovskite intergranular interfaces together with the application of the fibrous crosspoint device configuration. Especially, these excellent crosspoint RRAM devices can be integrated into the woven fibrous RRAM array in the thermal plastic packaging configuration. In addition, the excellent multilevel RS behavior can also be realized in the woven fibrous RRAM array, indicating potential high-density data storage. This work provides a novel strategy of polymer additives bearing the polyanionic backbone to improve the flexibility, stability, and RS performance of perovskite RRAM devices.
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Affiliation(s)
- Junqing Shen
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Ping Guan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Aiyun Jiang
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
| | - Wentao Fan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengnan Li
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Yingliang Liu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengang Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shaokui Cao
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
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Guan X, Lei Z, Yu X, Lin CH, Huang JK, Huang CY, Hu L, Li F, Vinu A, Yi J, Wu T. Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203311. [PMID: 35989093 DOI: 10.1002/smll.202203311] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 07/05/2022] [Indexed: 06/15/2023]
Abstract
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.
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Affiliation(s)
- Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, 398 Ruoshui Road, Suzhou, 215123, China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Feng Li
- School of Physics, Nano Institute, ACMM, The University of Sydney, Sydney, New South Wales, 2006, Australia
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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9
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Liu B, Lai J, Wu D, Li L, Kang K, Hu W, Tang X. High-Performance Resistive Random Access Memories Based on Two-Dimensional HAPbI 4 Organic-Inorganic Hybrid Perovskite. J Phys Chem Lett 2022; 13:7653-7659. [PMID: 35959984 DOI: 10.1021/acs.jpclett.2c01786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic hybrid perovskites have attracted extensive attention for potential memory applications because of their excellent properties, such as high charge carrier mobility and fast ion migration. Herein, the two-dimensional HAPbI4 perovskite with an octahedral structure and high stability was prepared by a facile solution method. Moreover, the resistive random access memory (RRAM) with the Ag/PMMA/HAPbI4/ITO structure has been successfully fabricated by spin coating and vacuum thermal evaporation. The as-prepared RRAM device based on HAPbI4 demonstrated superior resistive switching performance. The on/off ratio is as high as 105, and the corresponding retention of the device exceeds 10 000 s; furthermore, the RRAM device could be kept stable after being kept in the air for 24 weeks.
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Affiliation(s)
- Binglin Liu
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Junan Lai
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Daofu Wu
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Liye Li
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Kaijin Kang
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Wei Hu
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China
| | - Xiaosheng Tang
- Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, People's Republic of China
- College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, People's Republic of China
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
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10
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Liu Q, Gao S, Xu L, Yue W, Zhang C, Kan H, Li Y, Shen G. Nanostructured perovskites for nonvolatile memory devices. Chem Soc Rev 2022; 51:3341-3379. [PMID: 35293907 DOI: 10.1039/d1cs00886b] [Citation(s) in RCA: 29] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.
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Affiliation(s)
- Qi Liu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Song Gao
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Lei Xu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Wenjing Yue
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Chunwei Zhang
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Hao Kan
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Yang Li
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China. .,State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
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11
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Song X, Yin H, Chang Q, Qian Y, Lyu C, Min H, Zong X, Liu C, Fang Y, Cheng Z, Qin T, Huang W, Wang L. One-Dimensional (NH=CINH 3) 3PbI 5 Perovskite for Ultralow Power Consumption Resistive Memory. RESEARCH (WASHINGTON, D.C.) 2021; 2021:9760729. [PMID: 38617378 PMCID: PMC11014674 DOI: 10.34133/2021/9760729] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2021] [Accepted: 08/12/2021] [Indexed: 04/16/2024]
Abstract
Organic-inorganic hybrid perovskites (OIHPs) have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth, mobile ions, and adjustable dimensions. However, there is a lack of investigation on controllable fabrication and storage properties of one-dimensional (1D) OIHPs. Here, the growth of 1D (NH=CINH3)3PbI5 ((IFA)3PbI5) perovskite and related resistive memory properties are reported. The solution-processed 1D (IFA)3PbI5 crystals are of well-defined monoclinic crystal phase and needle-like shape with the length of about 6 mm. They exhibit a wide bandgap of 3 eV and a high decomposition temperature of 206°C. Moreover, the (IFA)3PbI5 films with good uniformity and crystallization were obtained using a dual solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). To study the intrinsic electric properties of this anisotropic material, we constructed the simplest memory cell composed of only Au/(IFA)3PbI5/ITO, contributing to a high-compacted device with a crossbar array device configuration. The resistive random access memory (ReRAM) devices exhibit bipolar current-voltage (I-V) hysteresis characteristics, showing a record-low power consumption of ~0.2 mW among all OIHP-based memristors. Moreover, our devices own the lowest power consumption and "set" voltage (0.2 V) among the simplest perovskite-based memory devices (inorganic ones are also included), which are no need to require double metal electrodes or any additional insulating layer. They also demonstrate repeatable resistance switching behaviour and excellent retention time. We envision that 1D OIHPs can enrich the low-dimensional hybrid perovskite library and bring new functions to low-power information devices in the fields of memory and other electronics applications.
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Affiliation(s)
- Xuefen Song
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Hao Yin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Qing Chang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yuchi Qian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chongguang Lyu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Huihua Min
- Electron Microscope Laboratory, Nanjing Forestry University, Nanjing 210037, China
| | - Xinrong Zong
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Chao Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Yinyu Fang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Zhengchun Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Xi’an Key Laboratory of Flexible Electronics (KLoFE), Xi’an Key Laboratory of Biomedical Materials & Engineering, Xi’an Institute of Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, 710072 Shaanxi, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
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12
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Wang Z, Wang L, Wu Y, Bian L, Nagai M, Jv R, Xie L, Ling H, Li Q, Bian H, Yi M, Shi N, Liu X, Huang W. Signal Filtering Enabled by Spike Voltage-Dependent Plasticity in Metalloporphyrin-Based Memristors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104370. [PMID: 34510593 DOI: 10.1002/adma.202104370] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2021] [Revised: 07/25/2021] [Indexed: 06/13/2023]
Abstract
Neural systems can selectively filter and memorize spatiotemporal information, thus enabling high-efficient information processing. Emulating such an exquisite biological process in electronic devices is of fundamental importance for developing neuromorphic architectures with efficient in situ edge/parallel computing, and probabilistic inference. Here a novel multifunctional memristor is proposed and demonstrated based on metalloporphyrin/oxide hybrid heterojunction, in which the metalloporphyrin layer allows for dual electronic/ionic transport. Benefiting from the coordination-assisted ionic diffusion, the device exhibits smooth, gradual conductive transitions. It is shown that the memristive characteristics of this hybrid system can be modulated by altering the metal center for desired metal-oxygen bonding energy and oxygen ions migration dynamics. The spike voltage-dependent plasticity stemming from the local/extended movement of oxygen ions under low/high voltage is identified, which permits potentiation and depression under unipolar different positive voltages. As a proof-of-concept demonstration, memristive arrays are further built to emulate the signal filtering function of the biological visual system. This work demonstrates the ionic intelligence feature of metalloporphyrin and paves the way for implementing efficient neural-signal analysis in neuromorphic hardware.
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Affiliation(s)
- Zhiyong Wang
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Laiyuan Wang
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Yiming Wu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
| | - Linyi Bian
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Masaru Nagai
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, China
| | - Ruolin Jv
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Linghai Xie
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Haifeng Ling
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Qi Li
- Physical Science Division, IBM Thomas J. Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, NY, 10598, USA
| | - Hongyu Bian
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Mingdong Yi
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Naien Shi
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
- Joint School of National University of Singapore and Tianjin, University International Campus of Tianjin University, Fuzhou, 350207, China
| | - Wei Huang
- Center for Molecular Systems & Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
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Gogoi HJ, Bajpai K, Mallajosyula AT, Solanki A. Advances in Flexible Memristors with Hybrid Perovskites. J Phys Chem Lett 2021; 12:8798-8825. [PMID: 34491743 DOI: 10.1021/acs.jpclett.1c02105] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.
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Affiliation(s)
- Himangshu Jyoti Gogoi
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Kunal Bajpai
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
| | - Arun Tej Mallajosyula
- Department of Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - Ankur Solanki
- Department of Physics, School of Technology, Pandit Deendayal Energy University, Gandhinagar 382421, India
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14
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Cui J, Fu X, Zhou H, Yin J, Wu M, Zhang X. Synthesis, structure, mobility and memristor properties of tetragonal CH 3NH 3PbBr 3 perovskite single crystals. Dalton Trans 2021; 50:10365-10368. [PMID: 34286763 DOI: 10.1039/d1dt00492a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The structure, mobility and memristor properties of tetragonal CH3NH3PbBr3 single crystals (T-MAPbBr3 SC) are rarely reported. In this study, we synthesized T-MAPbBr3 SC with the P4/mmm (123) space group by the growing, dropping and growing (GDG) crystal seed method. A CH3NH3+ cation is a disordered state in T-MAPbBr3 SC. The mobility values of T-MAPbBr3 SC under light and dark conditions are 464.28 and -1685.3 cm2 V-1 s-1, respectively. The carrier types under light and dark conditions are holes and electrons, respectively. The memristor based on T-MAPbBr3 SC has a wide and low operating voltage window (0-0.9 V). The high and low resistances of the memristor based on T-MAPbBr3 SC achieve values of 41 and 0.35 GΩ, respectively. The values of high and low resistances are relatively stable for 100 cycles. Thus, the memristor device based on T-MAPbBr3 SC has good applications in the field of memristors.
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Affiliation(s)
- Jiawen Cui
- School of Chemistry and Chemical Engineering; College of Materials Science and Engineering; Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage; Liaocheng University, China.
| | - Xuewei Fu
- School of Chemistry and Chemical Engineering; College of Materials Science and Engineering; Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage; Liaocheng University, China.
| | - Huawei Zhou
- School of Chemistry and Chemical Engineering; College of Materials Science and Engineering; Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage; Liaocheng University, China.
| | - Jie Yin
- School of Chemistry and Chemical Engineering; College of Materials Science and Engineering; Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage; Liaocheng University, China.
| | - Mingxing Wu
- Key Laboratory of Inorganic Nano-materials of Hebei Province, College of Chemistry and Material Science, Hebei Normal University, No. 20 Rd. East of 2nd Ring South, Yuhua District, Shijiazhuang City, Hebei Province 050024, China.
| | - Xianxi Zhang
- School of Chemistry and Chemical Engineering; College of Materials Science and Engineering; Shandong Provincial Key Laboratory/Collaborative Innovation Center of Chemical Energy Storage; Liaocheng University, China.
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15
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Wang S, Zhang Z, Xiong Y, Dong X, Sha J, Bai X, Li W, Yin Y, Wang Y. Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage. NANOTECHNOLOGY 2021; 32:375201. [PMID: 34049300 DOI: 10.1088/1361-6528/ac0667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2021] [Accepted: 05/27/2021] [Indexed: 06/12/2023]
Abstract
Organic-inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, and achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, the intermediate layer of the memristor was prepared using yttrium oxide (Y2O3)/OHP stacking structure in this manuscript. The potential barrier between Y2O3and perovskite is relatively high (ΔEC = 2.13 eV) which leads to comparatively low current of the memristor, thus the power consumption can be reduced. Besides, by changing the external light conditions, one can realize sharp or slow switch between high resistance state (HRS) and low resistance state (LRS), so as to meet the requirement of multilevel data storage, which indicates its promising application prospect in information storage and biological simulation. In addition, based on characteristics of photoelectric coupling, the Y2O3/OHP memristor can also achieve the advantage of adjustable threshold voltage. The transition of HRS and LRS can be realized by changing the illumination condition at any voltage, which means the set and reset voltage are not fixed, so that the memristor with adjustable threshold voltage can adapt to various working conditions.
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Affiliation(s)
- Shaoxi Wang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Zhejia Zhang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Yuxuan Xiong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Xiangqi Dong
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Jian Sha
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Xiaochen Bai
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Wei Li
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Yue Yin
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
| | - Yucheng Wang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an City, People's Republic of China
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Younis A, Lin CH, Guan X, Shahrokhi S, Huang CY, Wang Y, He T, Singh S, Hu L, Retamal JRD, He JH, Wu T. Halide Perovskites: A New Era of Solution-Processed Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005000. [PMID: 33938612 DOI: 10.1002/adma.202005000] [Citation(s) in RCA: 48] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 10/29/2020] [Indexed: 05/26/2023]
Abstract
Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.
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Affiliation(s)
- Adnan Younis
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
- Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhir Campus, Zallaq, Kingdom of Bahrain
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Shamim Shahrokhi
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Yutao Wang
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Tengyue He
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Simrjit Singh
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Jose Ramon Duran Retamal
- Computer, Electrical and Mathematical Sciences and Engineering, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jr-Hau He
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, China
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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Jeong H, Kim J, Kim DY, Kim J, Moon S, Ngome Okello OF, Lee S, Hwang H, Choi SY, Kim JK. Resistive Switching in Few-Layer Hexagonal Boron Nitride Mediated by Defects and Interfacial Charge Transfer. ACS APPLIED MATERIALS & INTERFACES 2020; 12:46288-46295. [PMID: 32959644 DOI: 10.1021/acsami.0c12012] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present resistive switching (RS) behavior of few-layer hexagonal boron nitride (h-BN) mediated by defects and interfacial charge transfer. Few-layer h-BN is grown by metal-organic chemical vapor deposition and used as active RS medium in Ti/h-BN/Au structure, exhibiting clear bipolar RS behavior and fast switching characteristics about ∼25 ns without an initial electroforming process. Systematic investigation on microstructural and chemical characteristics of the h-BN reveals that there are structural defects such as homoelemental B-B bonds at grain boundaries and nitrogen vacancies, which can provide preferential pathways for the penetration of Tix+ ions through the h-BN film. In addition, the interfacial charge transfer from Ti to the h-BN is observed by in situ X-ray photoelectron spectroscopy. We suggest that the attractive Coulomb interaction between positively charged Tix+ ions and the negatively charged h-BN surface as a result of the interfacial charge transfer facilitates the migration of Tix+ ions at the Ti/h-BN interface, leading to the facile formation of conductive filaments. We believe that these findings can improve our understanding of the fundamental mechanisms involved in RS behavior of h-BN and contribute a significant step for the future development of h-BN-based nonvolatile memory applications.
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Affiliation(s)
- Hokyeong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Dong Yeong Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jaewon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Odongo Francis Ngome Okello
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Sangmin Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Hyunsang Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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18
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Han JS, Le QV, Kim H, Lee YJ, Lee DE, Im IH, Lee MK, Kim SJ, Kim J, Kwak KJ, Choi MJ, Lee SA, Hong K, Kim SY, Jang HW. Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003225. [PMID: 32945139 DOI: 10.1002/smll.202003225] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Revised: 07/22/2020] [Indexed: 06/11/2023]
Abstract
Organometallic and all-inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current-voltage hysteresis caused by fast ion migration. Lead-free and all-inorganic HPs have been researched for non-toxic and environmentally friendly RS memory devices. However, only HP-based devices with electrochemically active top electrode (TE) exhibit ultra-low operating voltages and high on/off ratio RS properties. The active TE easily reacts to halide ions in HP films, and the devices have a low device durability. Herein, RS memory devices based on an air-stable lead-free all-inorganic dual-phase HP (AgBi2 I7 -Cs3 Bi2 I9 ) are successfully fabricated with inert metal electrodes. The devices with Au TE show filamentary RS behavior by conducting-bridge involving Ag cations in HPs with ultra-low operating voltages (<0.15 V), high on/off ratio (>107 ), multilevel data storage, and long retention times (>5 × 104 s). The use of a closed-loop pulse switching method improves reversible RS properties up to 103 cycles with high on/off ratio above 106 . With an extremely small bending radius of 1 mm, the devices are operable with reasonable RS characteristics. This work provides a promising material strategy for lead-free all-inorganic HP-based nonvolatile memory devices for practical applications.
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Affiliation(s)
- Ji Su Han
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Quyet Van Le
- Institute of Research and Development, Duy Tan University, Da Nang, 550000, Vietnam
| | - Hyojung Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Da Eun Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - In Hyuk Im
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Min Kyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seung Ju Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jaehyun Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kyung Ju Kwak
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Min-Ju Choi
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sol A Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kootak Hong
- Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
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19
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Liao MY, Chiang YC, Chen CH, Chen WC, Chueh CC. Two-Dimensional Cs 2Pb(SCN) 2Br 2-Based Photomemory Devices Showing a Photoinduced Recovery Behavior and an Unusual Fully Optically Driven Memory Behavior. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36398-36408. [PMID: 32700518 DOI: 10.1021/acsami.0c10587] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D Cs2Pb(SCN)2Br2/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >106 over 104 s, an unusual fully optically driven memory behavior is intriguingly accomplished in the Cs2Pb(SCN)2Br2/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 103. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.
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Affiliation(s)
- Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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20
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Xia F, Xu Y, Li B, Hui W, Zhang S, Zhu L, Xia Y, Chen Y, Huang W. Improved Performance of CH 3NH 3PbI 3-xCl x Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15439-15445. [PMID: 32148014 DOI: 10.1021/acsami.9b22732] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The rapidly growing demand for fast information storage and processing has driven the development of resistive random access memories (RRAMs). Recently, RRAMs based on organometal halide perovskite materials have been reported to have promising memory properties, which are essential for next-generation memory devices. In this study, a hybrid two-dimensional/three-dimensional (2D/3D) perovskite heterostructure has been created by depositing n-butylammonium iodide on top of the CH3NH3PbI3-xClx (MAPbI3-xClx) surface. The perovskite film is fabricated by a facile one-step spin-coating method with room-temperature molten salt methylammonium acetate in the air. Resistive switching memory devices with a 2D/3D perovskite heterostructure exhibit a significantly improved switching window (ON/OFF ratio over 103) with a lower operation voltage compared with their 3D counterparts. The 2D/3D perovskite heterostructure is advantageous for fabricating uniform-crystalline-grain, highly compact structures and can passivate defect states for the MAPbI3-xClx film and the interface, which results in improved memory properties. These results provide a new perspective for developing high-performance perovskite-based memory devices.
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Affiliation(s)
- Fei Xia
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
| | - Ying Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
| | - Bixin Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
- Department of Science Education, Laboratory of College Physics, Hunan First Normal University, 1015 Fenglin Third Road, Changsha 410205, China
| | - Wei Hui
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
| | - Shiyang Zhang
- Department of Science Education, Laboratory of College Physics, Hunan First Normal University, 1015 Fenglin Third Road, Changsha 410205, China
| | - Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, P. R. China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
- Key Laboratory for Organic Electronics and Information Displays (KLOEID), & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
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21
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Chen H, Luo Q, Liu T, Tai M, Lin J, Murugadoss V, Lin H, Wang J, Guo Z, Wang N. Boosting Multiple Interfaces by Co-Doped Graphene Quantum Dots for High Efficiency and Durability Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:13941-13949. [PMID: 32079392 DOI: 10.1021/acsami.9b23255] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Organic-inorganic hybrid perovskite solar cells (PSCs), as the most rapidly developing next-generation thin-film photovoltaic technology, have attracted extensive research interest, yet their efficiency, scalability, and durability remain challenging. α-Fe2O3 could be used as an electron transporting layer (ETL) of planar PSCs, which exhibits a much higher humidity and UV light-stability compared to TiO2-based planar PSCs. However, the photovoltaic conversion efficiency (PCE) of the Fe2O3-based device was still below 15% because of poor interface contact between α-Fe2O3 and perovskite and poor crystal quality of perovskites. In this work, we have engineered the interfaces throughout the entire solar cell via incorporating N, S co-doped graphene quantum dots (NSGQDs). The NSGQDs played remarkable multifunctional roles: (i) facilitated the perovskite crystal growth; (ii) eased charge extraction at both anode and cathode interfaces; and (iii) induced the defect passivation and suppressed the charge recombination. When assembled with a α-Fe2O3 ETL, the planar PSCs exhibited a significantly increased efficiency from 14 to 19.2%, with concomitant reductions in hysteresis, which created a new record of the PCE for Fe2O3-based PSCs to date. In addition, PSCs with the entire device interfacial engineering showed an obviously improved durability, including prominent humidity, UV light, and thermal stabilities. Our interfacial engineering methodology via graphene quantum dots represents a versatile and effective way for building high efficiency as well as durable PSCs.
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Affiliation(s)
- Hui Chen
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qiang Luo
- State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou 570228, China
| | - Tao Liu
- State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou 570228, China
| | - Meiqian Tai
- School of Material Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jing Lin
- School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006 China
| | - Vignesh Murugadoss
- School of Materials Science and Engineering, North University of China, Taiyuan 030051, China
- Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education, National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450001, China
| | - Hong Lin
- School of Material Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jinshu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhanhu Guo
- Integrated Composites Lab (ICL), Department of Chemical & Biomolecular Engineering, University of Tennessee, Knoxville, Tennessee 37934, United States
| | - Ning Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou 570228, China
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22
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Sun WJ, Zhao YY, Cheng XF, He JH, Lu JM. Surface Functionalization of Single-Layered Ti 3C 2T x MXene and Its Application in Multilevel Resistive Memory. ACS APPLIED MATERIALS & INTERFACES 2020; 12:9865-9871. [PMID: 32009386 DOI: 10.1021/acsami.9b16979] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
MXenes are a new type of two-dimensional material, and they have attracted extensive attention because of their outstanding conductivity and rich surface functional groups that make surface engineering easy and possible for adapting to diverse applications. However, there are scarce studies on surface engineering of MXene. Herein, we demonstrate for the first time that octylphosphonic acid-modified Ti3C2Tx MXene can be used as an active layer for memory devices and exhibits stable ternary memory behavior. Low threshold voltage, steady retention time, clearly distinguishable resistance states, high ON/OFF rate, OFF/ON1/ON2 = 1:102.7:104.1, and considerable ternary yield (58%) were obtained. In the proof of the mechanism, in situ conductive atomic force microscopy was conducted and the electrode-area relationship was analyzed to demonstrate that charge trapping and filament conduction are more suitable in the nonvolatile information memory of Ti3C2Tx-OP MXene devices. In addition, a polyethylene-terephthalate-based flexible Ti3C2Tx-OP memory device can maintain its stable ternary memory performance after being bent 5000 times. This work provides an easy method for surface modification of MXene and broadens the field of MXene.
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Affiliation(s)
- Wu-Ji Sun
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , P. R. China
| | - Yong-Yan Zhao
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , P. R. China
| | - Xue-Feng Cheng
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , P. R. China
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , P. R. China
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , P. R. China
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23
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Cheng XF, Qian WH, Wang J, Yu C, He JH, Li H, Xu QF, Chen DY, Li NJ, Lu JM. Environmentally Robust Memristor Enabled by Lead-Free Double Perovskite for High-Performance Information Storage. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1905731. [PMID: 31668013 DOI: 10.1002/smll.201905731] [Citation(s) in RCA: 44] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2019] [Revised: 10/17/2019] [Indexed: 06/10/2023]
Abstract
Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead-free double perovskite Cs2 AgBiBr6 is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium-tin-oxide/Cs2 AgBiBr6 /Au sandwich-like memristors is retained after 1000 switching cycles, 105 s of reading, and 104 times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and 60 Co γ-ray irradiation for a dosage of 5 × 105 rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs2 AgBiBr6 with a high memory performance will inspire further development of robust electronics using lead-free double perovskites.
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Affiliation(s)
- Xue-Feng Cheng
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Wen-Hu Qian
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
- Testing and Analysis Center, Soochow University, Suzhou, 215123, P. R. China
| | - Jia Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Chuang Yu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Qing-Feng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Dong-Yun Chen
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Na-Jun Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
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24
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Zhang H, Zhao X, Bai J, Hou Y, Wang S, Wang C, Ma D. Ternary Memory Devices Based on Bipolar Copolymers with Naphthalene Benzimidazole Acceptors and Fluorene/Carbazole Donors. Macromolecules 2019. [DOI: 10.1021/acs.macromol.9b02033] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Affiliation(s)
| | | | | | | | | | | | - Dongge Ma
- School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China
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25
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Qian WH, Cheng XF, Zhao YY, Zhou J, He JH, Li H, Xu QF, Li NJ, Chen DY, Lu JM. Independent Memcapacitive Switching Triggered by Bromide Ion Migration for Quaternary Information Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806424. [PMID: 31379043 DOI: 10.1002/adma.201806424] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2018] [Revised: 06/08/2019] [Indexed: 06/10/2023]
Abstract
Memcapacitors are emerging as an attractive candidate for high-density information storage due to their multilevel and adjustable capacitances and long-term retention without a power supply. However, knowledge of their memcapacitive mechanism remains unclear and accounts for the limited implementation of memcapacitors for multilevel memory technologies. Here, repeatable and reproducible quaternary memories fabricated from hybrid perovskite (CH3 NH3 SnBr3 ) memcapacitors are reported. The device can be modulated to at least four capacitive states ranging from 0 to 169 pF with retention for 104 s. Impressively, an effective device yield approaching 100% for quaternary memory switching is achieved by a batch of devices; each state has a sufficiently narrow distribution that can be distinguished from the others and is superior to most multilevel memories that have a low device yield as well as an overlapping distribution of states. The memcapacitive switching stems from the modulated p-i-n junction capacitance triggered by Br- migration, as demonstrated by in situ element mapping, X-ray photoelectron spectra, and frequency-dependent capacitance measurements; this mechanism is different from the widely reported memristive switching involving filamentary conduction. The results provide a new way to produce high-density information storage through memcapacitors.
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Affiliation(s)
- Wen-Hu Qian
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
- Testing and Analysis Center, Soochow University, Suzhou, 215123, P. R. China
| | - Xue-Feng Cheng
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Yong-Yan Zhao
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jin Zhou
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Qing-Feng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Na-Jun Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Dong-Yun Chen
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
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26
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Walker B, Kim GH, Kim JY. Pseudohalides in Lead-Based Perovskite Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807029. [PMID: 30701604 DOI: 10.1002/adma.201807029] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2018] [Revised: 11/30/2018] [Indexed: 06/09/2023]
Abstract
The emerging class of lead halide perovskite (LHP) semiconductors offers a surprising combination of low cost, ease of preparation, outstanding material properties, and performance in optoelectronic devices that has not yet been observed in any other class of material. Considering their general ABX3 formula, the halide (X) composition in LHP compositions has proven to be one of the best handles to control the material characteristics such as bandgap, morphology, and electronic properties. However, compared to the amount of effort that has been expended to discover new A cations and B cations, relatively few reports have dealt with the subject of discovering new X anions outside of the series of halides (Cl- , Br- , I- ). In principal, a much wider range of anions with a -1 charge (pseudohalides) may form the ABX3 stoichiometry with Pb2+ , yet the general ability of polyatomic pseudohalides to form semiconducting perovskite crystal phases with Pb2+ remains an open question. Herein, the prospect of using polyatomic pseudohalide anions in LHP semiconductors is addressed.
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Affiliation(s)
- Bright Walker
- Department of Chemistry, Kyung Hee University, Seoul, 02447, South Korea
| | - Gi-Hwan Kim
- Photonic Energy Research Center, Korea Photonics Technology Institute, 108, Cheomdan venture-ro, Buk-gu, Gwangju, 500-779, South Korea
| | - Jin Young Kim
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
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27
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One-dimensional π-d conjugated coordination polymers: synthesis and their improved memory performance. Sci China Chem 2019. [DOI: 10.1007/s11426-018-9447-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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28
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Hong Z, Zhao J, Li S, Cheng B, Xiao Y, Lei S. Tunable hysteresis behaviour related to trap filling dependence of surface barrier in an individual CH 3NH 3PbI 3 micro/nanowire. NANOSCALE 2019; 11:3360-3369. [PMID: 30724937 DOI: 10.1039/c8nr08934e] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Hybrid organic-inorganic perovskite (HOIP) materials have remarkable potential in solar cells owing to their high power conversion efficiency and inexpensive preparation. However, their current-voltage (I-V) curves often exhibit hysteresis characteristics, which not only strongly affect the accuracy of measurements but also seriously impair device performance, and, moreover, their actual origin is still the subject of debate. Here, a single HOIP micro/nanowire-based two-terminal device was constructed. Not only can its hysteresis properties be accurately modulated, but also their origin can clearly be identified as variations in the surface barrier related to trap filling. Under illumination of the entire device with visible (VIS) light, two anticlockwise hysteresis loops appear symmetrically in cyclic I-V curves. Interestingly, the cyclic I-V curves can be switchably changed into asymmetrical "8"-shaped hysteresis loops with bipolar resistive switching (RS) features when only the vicinity of one electrode is illuminated. The traps located in the surface space charge region play a crucial role in the tunable hysteresis behaviour. Owing to the presence of abundant surface states, two back-to-back connected diodes related to the surface barrier can be formed in the two-terminal device. With the synergistic assistance of illumination and bias, moreover, the injection and extraction of holes in the surface space charge region can effectively modulate the surface barrier, which triggers the formation of a bipolar RS device. Accordingly, two switchable back-to-back connected bipolar RS devices were built. Regarding the tunable hysteresis with nonvolatile memory properties controlled by the synergistic action of bias and illumination, our results provide a valuable insight into the identification of its origin and, furthermore, also indicate that the HOIP materials have significant potential in nonvolatile memory applications.
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Affiliation(s)
- Zhen Hong
- School of Materials Science and Engineering, Nanchang University, Jiangxi 330031, P. R. China.
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29
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Ma H, Wang W, Xu H, Wang Z, Tao Y, Chen P, Liu W, Zhang X, Ma J, Liu Y. Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2018; 10:21755-21763. [PMID: 29873232 DOI: 10.1021/acsami.8b07850] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Hybrid organic-inorganic perovskite, well-known as light-absorbing materials in solar cells, have recently attracted considerable interest for applications in resistive switching (RS) memory. A better understanding of the role of interface state in hybrid perovskite materials on RS behavior is essential for the development of practical devices. Here, we study the influence of interface state on the RS behavior of an Au/CH3NH3PbI3/FTO memory device using a simple air exposure method. We observe a transition of RS hysteresis behavior with exposure time. Initially no hysteresis is apparent, but air exposure induces bipolar RS and a negative differential resistance (NDR) phenomenon. The reductions of I/Pb atomic ratio and work function on the film surface are examined using XPS spectra and Kelvin probe technique, verifying the produce of donor-type interface states (e.g., iodine vacancies) during CH3NH3PbI3 film degradation. Studies on complex impedance spectroscopy confirm the responsibility of interface states in NDR behavior. Eventually, the trapping/detrapping of electrons in bulk defects and at interface states accounts for the bipolar RS behavior accompanied with the NDR effect.
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Affiliation(s)
- Hanlu Ma
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Wei Wang
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Peng Chen
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Weizhen Liu
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Xintong Zhang
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Jiangang Ma
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology, Ministry of Education , Northeast Normal University , 5268 Renmin Street , Changchun 130024 , China
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Wu Y, Chen W, Chen G, Liu L, He Z, Liu R. The Impact of Hybrid Compositional Film/Structure on Organic⁻Inorganic Perovskite Solar Cells. NANOMATERIALS (BASEL, SWITZERLAND) 2018; 8:E356. [PMID: 29882844 PMCID: PMC6027407 DOI: 10.3390/nano8060356] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/25/2018] [Revised: 05/17/2018] [Accepted: 05/18/2018] [Indexed: 11/16/2022]
Abstract
Perovskite solar cells (PSCs) have been intensively investigated over the last several years. Unprecedented progress has been made in improving their power conversion efficiency; however, the stability of perovskite materials and devices remains a major obstacle for the future commercialization of PSCs. In this review, recent progress in PSCs is summarized in terms of the hybridization of compositions and device architectures for PSCs, with special attention paid to device stability. A brief history of the development of PSCs is given, and their chemical structures, optoelectronic properties, and the different types of device architectures are discussed. Then, perovskite composition engineering is reviewed in detail, with particular emphasis on the cationic components and their impact on film morphology, the optoelectronic properties, device performance, and stability. In addition, the impact of two-dimensional and/or one-dimensional and nanostructured perovskites on structural and device stability is surveyed. Finally, a future outlook is proposed for potential resolutions to overcome the current issues.
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Affiliation(s)
- Yinghui Wu
- Department of Physics, Chongqing University, No. 55, University City South Rd., Chongqing 401331, China.
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, China.
| | - Wei Chen
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, China.
| | - Guo Chen
- Department of Physics, Chongqing University, No. 55, University City South Rd., Chongqing 401331, China.
| | - Liyu Liu
- Department of Physics, Chongqing University, No. 55, University City South Rd., Chongqing 401331, China.
| | - Zhubing He
- Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, No. 1088, Xueyuan Rd., Shenzhen 518055, China.
| | - Ruchuan Liu
- Department of Physics, Chongqing University, No. 55, University City South Rd., Chongqing 401331, China.
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