1
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Zha J, Xia Y, Shi S, Huang H, Li S, Qian C, Wang H, Yang P, Zhang Z, Meng Y, Wang W, Yang Z, Yu H, Ho JC, Wang Z, Tan C. A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing. Adv Mater 2024; 36:e2308502. [PMID: 37862005 DOI: 10.1002/adma.202308502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Indexed: 10/21/2023]
Abstract
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.
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Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chen Qian
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Huide Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, Guangdong, 518118, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
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Pang Y, Zhou Y, Tong L, Xu J. 2D Dual Gate Field-Effect Transistor Enabled Versatile Functions. Small 2024; 20:e2304173. [PMID: 37705128 DOI: 10.1002/smll.202304173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Revised: 08/28/2023] [Indexed: 09/15/2023]
Abstract
Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet these demands due to the ultra-thin body and the dangling-bond-free surface. In this work, a molybdenum disulfide (MoS2 ) asymmetric-dual-gate field-effect transistor (ADGFET) with an In2 Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec-1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge-trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six-level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W-1 , benefiting from the interface coupling between the double gates. Meanwhile, the photo-memory property of ADGFET is also verified by using the varying exposure dosages-dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.
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Affiliation(s)
- Yue Pang
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
| | - Lei Tong
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China
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3
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Xia Y, Zha J, Huang H, Wang H, Yang P, Zheng L, Zhang Z, Yang Z, Chen Y, Chan HP, Ho JC, Tan C. Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe 2-Based 2D van der Waals Heterostructures. ACS Appl Mater Interfaces 2023; 15:35196-35205. [PMID: 37459597 DOI: 10.1021/acsami.3c06316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
Although the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been proven to play an essential role in fabricating high-performance electronic devices in the past decade, its effect on the performance of 2D material-based flash memory devices still remains unclear. Here, we report the exploration of the effect of MoTe2 in different phases as the charge-trapping layer on the performance of 2D van der Waals (vdW) heterostructure-based flash memory devices, where a metallic 1T'-MoTe2 or semiconducting 2H-MoTe2 nanoflake is used as the floating gate. By conducting comprehensive measurements on the two kinds of vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T'-MoTe2 presents much better performance, including a larger memory window, faster switching speed (100 ns), and higher extinction ratio (107), than that of the device based on the MoS2/h-BN/2H-MoTe2 heterostructure. Moreover, the device based on the MoS2/h-BN/1T'-MoTe2 heterostructure also shows a long cycle (>1200 cycles) and retention (>3000 s) stability. Our study clearly demonstrates that the crystal phase of 2D TMDs has a significant impact on the performance of nonvolatile flash memory devices based on 2D vdW heterostructures, which paves the way for the fabrication of future high-performance memory devices based on 2D materials.
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Affiliation(s)
- Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Huide Wang
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam 999077, Hong Kong SAR, China
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Yampolsky M, Pikhay E, Shima Edelstein R, Roizin Y. High-Sensitivity CMOS-Integrated Floating Gate-Based UVC Sensors. Sensors (Basel) 2023; 23:2509. [PMID: 36904716 PMCID: PMC10006957 DOI: 10.3390/s23052509] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Revised: 02/22/2023] [Accepted: 02/22/2023] [Indexed: 06/18/2023]
Abstract
We report on novel UVC sensors based on the floating gate (FG) discharge principle. The device operation is similar to that of EPROM non-volatile memories UV erasure, but the sensitivity to ultraviolet light is strongly increased by using single polysilicon devices of special design with low FG capacitance and long gate periphery (grilled cells). The devices were integrated without additional masks into a standard CMOS process flow featuring a UV-transparent back end. Low-cost integrated UVC solar blind sensors were optimized for implementation in UVC sterilization systems, where they provided feedback on the radiation dose sufficient for disinfection. Doses of ~10 µJ/cm2 at 220 nm could be measured in less than a second. The device can be reprogrammed up to 10,000 times and used to control ~10-50 mJ/cm2 UVC radiation doses typically employed for surface or air disinfection. Demonstrators of integrated solutions comprising UV sources, sensors, logics, and communication means were fabricated. Compared with the existing silicon-based UVC sensing devices, no degradation effects that limit the targeted applications were observed. Other applications of the developed sensors, such as UVC imaging, are also discussed.
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5
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Chiang YC, Yang WC, Hung CC, Ercan E, Chiu YC, Lin YC, Chen WC. Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate. ACS Appl Mater Interfaces 2023; 15:1675-1684. [PMID: 36562738 DOI: 10.1021/acsami.2c18064] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Chien Hung
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Cheng Chiu
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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6
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Chen YY, Lee FM, Lin YY, Lee CH, Chen WC, Shu CK, Lin SJ, Chang SY, Lu CY. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials (Basel) 2022; 15:ma15103640. [PMID: 35629667 PMCID: PMC9144071 DOI: 10.3390/ma15103640] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2022] [Revised: 05/10/2022] [Accepted: 05/16/2022] [Indexed: 01/27/2023]
Abstract
To lower the charge leakage of a floating gate device and improve the operation performance of memory devices toward a smaller structure size and a higher component capability, two new types of floating gates composed of pn-type polysilicon or np-type polysilicon were developed in this study. Their microstructure and elemental compositions were investigated, and the sheet resistance, threshold voltages and erasing voltages were measured. The experimental results and charge simulation indicated that, by forming an n-p junction in the floating gate, the sheet resistance was increased, and the charge leakage was reduced because of the formation of a carrier depletion zone at the junction interface serving as an intrinsic potential barrier. Additionally, the threshold voltage and erasing voltage of the np-type floating gate were elevated, suggesting that the performance of the floating gate in the operation of memory devices can be effectively improved without the application of new materials or changes to the physical structure.
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Affiliation(s)
- Yi-Yueh Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; (S.-J.L.); (S.-Y.C.)
- Quality Engineering Center, Macronix International Co., Ltd., Hsinchu 30078, Taiwan;
- Correspondence: ; Tel.: +886-3-578-6688
| | - Feng-Ming Lee
- Emergency Central Lab., Macronix International Co., Ltd., Hsinchu 30078, Taiwan; (F.-M.L.); (Y.-Y.L.); (W.-C.C.); (C.-Y.L.)
| | - Yu-Yu Lin
- Emergency Central Lab., Macronix International Co., Ltd., Hsinchu 30078, Taiwan; (F.-M.L.); (Y.-Y.L.); (W.-C.C.); (C.-Y.L.)
| | - Chih-Hsiung Lee
- Technology Development Center, Macronix International Co., Ltd., Hsinchu 30078, Taiwan;
| | - Wei-Chen Chen
- Emergency Central Lab., Macronix International Co., Ltd., Hsinchu 30078, Taiwan; (F.-M.L.); (Y.-Y.L.); (W.-C.C.); (C.-Y.L.)
| | - Che-Kai Shu
- Quality Engineering Center, Macronix International Co., Ltd., Hsinchu 30078, Taiwan;
| | - Su-Jien Lin
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; (S.-J.L.); (S.-Y.C.)
| | - Shou-Yi Chang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan; (S.-J.L.); (S.-Y.C.)
| | - Chih-Yuan Lu
- Emergency Central Lab., Macronix International Co., Ltd., Hsinchu 30078, Taiwan; (F.-M.L.); (Y.-Y.L.); (W.-C.C.); (C.-Y.L.)
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7
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Wali A, Ravichandran H, Das S. A Machine Learning Attack Resilient True Random Number Generator Based on Stochastic Programming of Atomically Thin Transistors. ACS Nano 2021; 15:17804-17812. [PMID: 34665596 DOI: 10.1021/acsnano.1c05984] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
A true random number generator (TRNG) is a critical hardware component that has become increasingly important in the era of Internet of Things (IoT) and mobile computing for ensuring secure communication and authentication schemes. While recent years have seen an upsurge in TRNGs based on nanoscale materials and devices, their resilience against machine learning (ML) attacks remains unexamined. In this article, we demonstrate a ML attack resilient, low-power, and low-cost TRNG by exploiting stochastic programmability of floating gate (FG) field effect transistors (FETs) with atomically thin channel materials. The origin of stochasticity is attributed to the probabilistic nature of charge trapping and detrapping phenomena in the FG. Our TRNG also satisfies other requirements, which include high entropy, uniformity, uniqueness, and unclonability. Furthermore, the generated bit-streams pass NIST randomness tests without any postprocessing. Our findings are important in the context of hardware security for resource constrained IoT edge devices, which are becoming increasingly vulnerable to ML attacks.
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Affiliation(s)
- Akshay Wali
- Electrical Engineering and Computer Science, Penn State University, University Park, Pennsylvania 16802, United States
| | - Harikrishnan Ravichandran
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Electrical Engineering and Computer Science, Penn State University, University Park, Pennsylvania 16802, United States
- Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, United States
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8
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Gao F, Zhang X, Tan B, Zhang S, Zhang J, Jia D, Zhou Y, Hu P. Low Optical Writing Energy Multibit Optoelectronic Memory Based on SnS 2 /h-BN/Graphene Heterostructure. Small 2021; 17:e2104459. [PMID: 34622561 DOI: 10.1002/smll.202104459] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Revised: 08/27/2021] [Indexed: 06/13/2023]
Abstract
With the rapid development of artificial intelligence and neural network computing, the requirement for information storage in computing is gradually increasing. Floating gate memories based on 2D materials has outstanding characteristics such as non-volatility, optical writing, and optical storage, suitable for application in photonic in-memory computing chips. Notably, the optoelectronic memory requires less optical writing energy, which means lower power consumption and greater storage levels. Here, the authors report an optoelectronic memory based on SnS2 /h-BN/graphene heterostructure with an extremely low photo-generated hole tunneling barrier of 0.23 eV. This non-volatile multibit floating gate memory shows a high switching ratio of 106 and a large memory window range of 64.8 V in the gate range ±40 V. And the memory device can achieve multilevel storage states of 50 under a low power light pulses of 0.32 nW and small light pulse width of 50 ms. Thanks to the Fowler-Nordheim tunneling of the photo-generated holes, the optical writing energy of the optoelectronic memory has been successfully reduced by one to three orders of magnitude compared to existing 2D materials-based systems.
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Affiliation(s)
- Feng Gao
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Xin Zhang
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Biying Tan
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Shichao Zhang
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Jia Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China
| | - Dechang Jia
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
| | - Yu Zhou
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
| | - PingAn Hu
- Institute for Advanced Ceramics, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- Key Laboratory of Advanced Structural-Function Integrated Materials and Green Manufacturing Technology, Ministry of Industry and Information, Harbin, 150080, China
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China
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9
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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10
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Jin R, Shi K, Qiu B, Huang S. Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate. Nanotechnology 2021; 33:025201. [PMID: 34619668 DOI: 10.1088/1361-6528/ac2dc5] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 10/06/2021] [Indexed: 06/13/2023]
Abstract
Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other fields because of their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, good dispersion and low cost. Herein, for the first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance the memory performance. The resulting organic nano-floating gate memory (NFGM) device exhibits outstanding memory properties, including tremendous memory window (∼85 V), superhigh memory on/off ratio (∼109), long data retention (over 10 years) and eminent multilevel storage behavior, which are among the optimal performances in NFGM devices based on organic field effect transistors. Additionally, the device displays photoinduced-reset characteristic with low energy consumption erasing operation. This study provides novel avenues for the manufacture of simple and low-cost data storage devices with outstanding memory performance, multilevel storage behavior and suitability as platforms for integrated circuits.
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Affiliation(s)
- Risheng Jin
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Keli Shi
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Beibei Qiu
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Shihua Huang
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
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11
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Wang R, Chen P, Hao D, Zhang J, Shi Q, Liu D, Li L, Xiong L, Zhou J, Huang J. Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning. ACS Appl Mater Interfaces 2021; 13:43144-43154. [PMID: 34470204 DOI: 10.1021/acsami.1c08424] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBi3I10 is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the Ilight/Idark ratio of 103 for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBi3I10, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.
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Affiliation(s)
- Ruizhi Wang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Pengyue Chen
- School of Electronic and Information Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Dandan Hao
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Junyao Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Qianqian Shi
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Dapeng Liu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Li Li
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
| | - Lize Xiong
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Shanghai 200434, P. R. China
| | - Junhe Zhou
- School of Electronic and Information Engineering, Tongji University, Shanghai 201804, P. R. China
| | - Jia Huang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 201804, P. R. China
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, Shanghai 200434, P. R. China
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12
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Abstract
Floating-gate transistors (FGTs) are a promising class of electronic sensing architectures that separate the transduction elements from molecular sensing components, but the factors leading to optimum device design are unknown. We developed a model, generalizable to many different semiconductor/dielectric materials and channel dimensions, to predict the sensor response to changes in capacitance and/or charge at the sensing surface upon target binding or other changes in surface chemistry. The model predictions were compared to experimental data obtained using a floating-gate (extended gate) electrochemical transistor, a variant of the generic FGT architecture that facilitates low-voltage operation and rapid, simple fabrication using printing. Self-assembled monolayer (SAM) chemistry and quasi-statically measured resistor-loaded inverters were utilized to obtain experimentally either the capacitance signals (with alkylthiol SAMs) or charge signals (with acid-terminated SAMs) of the FGT. Experiments reveal that the model captures the inverter gain and charge signals over 3 orders of magnitude variation in the size of the sensing area and the capacitance signals over 2 orders of magnitude but deviates from experiments at lower capacitances of the sensing surface (<1 nF). To guide future device design, model predictions for a large range of sensing area capacitances and characteristic voltages are provided, enabling the calculation of the optimum sensing area size for maximum charge and capacitance sensitivity.
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Affiliation(s)
- Mathew S. Thomas
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - Demetra Z. Adrahtas
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - C. Daniel Frisbie
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
| | - Kevin D. Dorfman
- Department of Chemical Engineering and Materials Science, University of Minnesota—Twin Cities, 421 Washington Avenue SE, Minneapolis, Minnesota 55455, United States
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13
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Yang WC, Lin YC, Liao MY, Hsu LC, Lam JY, Chuang TH, Li GS, Yang YF, Chueh CC, Chen WC. Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate. ACS Appl Mater Interfaces 2021; 13:20417-20426. [PMID: 33886254 DOI: 10.1021/acsami.1c03402] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Photonic transistor memory has received increasing attention as next-generation optoelectronic devices for light fidelity (Li-Fi) application due to the attractive advantages of ultra-speed, high security, and low power consumption. However, most transistor-type photonic memories developed to date still rely on electrical bias for operation, imposing certain limits on data transmission efficiency and energy consumption. In this study, the dual manipulation of "photo-writing" and "photo-erasing" of a novel photonic transistor memory is successfully realized by cleverly utilizing the complementary light absorption between the photoactive material, n-type BPE-PTCDI, in the active channel and the hybrid floating gate, CH3NH3PbBr3/poly(2-vinylpyridine). The fabricated device not only can be operated under the full spectrum but also shows stable switching cycles of photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) (PW-R-PE-R) with a high memory ratio of ∼104, and the memory characteristics possess a stable long-term retention of >104 s. Notably, photo-erasing only requires 1 s light illumination. Due to the fully optical functionality, the rigid gate electrode is removed and a novel two-terminal flexible photonic memory is fabricated. The device not only exhibits stable electrical performance after 1000 bending cycles but also manifests a multilevel functional behavior, demonstrating a promising potential for the future development of photoactive electronic devices.
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Affiliation(s)
- Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Li-Che Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Jeun-Yan Lam
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Tsung-Han Chuang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Guan-Syuan Li
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Fang Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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14
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Bai J, Shen W, Shi J, Xu W, Zhang S, Chang S. A Non-Volatile Tunable Terahertz Metamaterial Absorber Using Graphene Floating Gate. Micromachines (Basel) 2021; 12:333. [PMID: 33801056 DOI: 10.3390/mi12030333] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2021] [Revised: 03/16/2021] [Accepted: 03/18/2021] [Indexed: 11/16/2022]
Abstract
Based on the graphene floating gate, a tunable terahertz metamaterial absorber is proposed. Compared with the traditional graphene–dielectric–metal absorber, our absorber has the property of being non-volatile and capacity for anti-interference. Using the finite element method, the paper investigates the absorption spectra, the electric field energy distribution, the tunability and the physical mechanism. In addition, we also analyse the influence of geometry, polarization and incident angles on the absorption. Simulation results show that the bandwidth of the absorption above 90% can reach up to 2.597 THz at the center frequency of 3.970 THz, and the maximum absorption can be tuned continuously from 14.405% to 99.864% by controlling the Fermi level from 0 eV to 0.8 eV. Meanwhile, the proposed absorber has the advantages of polarization insensitivity and a wide angle, and has potential applications in imaging, sensing and photoelectric detection.
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15
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Sasaki T, Ueno K, Taniguchi T, Watanabe K, Nishimura T, Nagashio K. Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage. Small 2020; 16:e2004907. [PMID: 33140573 DOI: 10.1002/smll.202004907] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2020] [Revised: 10/08/2020] [Indexed: 06/11/2023]
Abstract
The memory window of floating gate (FG) type non-volatile memory (NVM) devices is a fundamental figure of merit used not only to evaluate the performance, such as retention and endurance, but also to discuss the feasibility of advanced functional memory devices. However, the memory window of 2D materials based NVM devices is historically determined from round sweep transfer curves, while that of conventional Si NVM devices is determined from high and low threshold voltages (Vth s), which are measured by single sweep transfer curves. Here, it is elucidated that the memory window of 2D NVM devices determined from round sweep transfer curves is overestimated compared with that determined from single sweep transfer curves. The floating gate voltage measurement proposed in this study clarifies that the Vth s in round sweep are controlled not only by the number of charges stored in floating gate but also by capacitive coupling between floating gate and back gate. The present finding on the overestimation of memory window enables to appropriately evaluate the potential of 2D NVM devices.
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Affiliation(s)
- Taro Sasaki
- Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama, 338-8570, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Ibaraki, 305-0044, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
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16
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Liao MY, Chiang YC, Chen CH, Chen WC, Chueh CC. Two-Dimensional Cs 2Pb(SCN) 2Br 2-Based Photomemory Devices Showing a Photoinduced Recovery Behavior and an Unusual Fully Optically Driven Memory Behavior. ACS Appl Mater Interfaces 2020; 12:36398-36408. [PMID: 32700518 DOI: 10.1021/acsami.0c10587] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D Cs2Pb(SCN)2Br2/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >106 over 104 s, an unusual fully optically driven memory behavior is intriguingly accomplished in the Cs2Pb(SCN)2Br2/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 103. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.
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Affiliation(s)
- Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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17
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Rodder MA, Vasishta S, Dodabalapur A. Double-Gate MoS 2 Field-Effect Transistor with a Multilayer Graphene Floating Gate: A Versatile Device for Logic, Memory, and Synaptic Applications. ACS Appl Mater Interfaces 2020; 12:33926-33933. [PMID: 32628007 DOI: 10.1021/acsami.0c08802] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
2D materials with low-temperature processing hold promise for electronic devices that augment conventional silicon technology. To meet this promise, devices should have capabilities not easily achieved with silicon technology, including planar fully-depleted silicon-on-insulator with substrate body-bias, or vertical finFETs with no body-bias capability. In this work, we fabricate and characterize a device [a double-gate MoS2 field-effect transistor (FET) with hexagonal boron nitride (h-BN) gate dielectrics and a multi-layer graphene floating gate (FG)] in multiple operating conditions to demonstrate logic, memory, and synaptic applications; a range of h-BN thicknesses is investigated for charge retention in the FG. In particular, we demonstrate this device as a (i) logic FET with adjustable VT by charges stored in the FG, (ii) digital flash memory with lower pass-through voltage to enable improved reliability, and (iii) synaptic device with decoupling of tunneling and gate dielectrics to achieve a symmetric program/erase conductance change. Overall, this versatile device, compatible to back-end-of-line integration, could readily augment silicon technology.
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Affiliation(s)
- Michael A Rodder
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Sudhanva Vasishta
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Ananth Dodabalapur
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
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18
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Gan LR, Wang YR, Chen L, Zhu H, Sun QQ. A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications. Micromachines (Basel) 2019; 10:mi10090558. [PMID: 31450802 PMCID: PMC6780788 DOI: 10.3390/mi10090558] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/17/2019] [Revised: 08/10/2019] [Accepted: 08/22/2019] [Indexed: 11/24/2022]
Abstract
We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO2 high-k dielectric extend above source and drain, the integrated density can be well improved, while the erasing and programming speed of the device are respectively decreased to 75 ns and 50 ns. In addition, comprehensive synaptic abilities including long-term potentiation (LTP) and long-term depression (LTD) are demonstrated in our U-shape recessed channel FG memory, highly resembling the biological synapses. These simulation results show that our device has the potential to be well used as embedded memory in neuromorphic computing and MCU (Micro Controller Unit) applications.
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Affiliation(s)
- Lu-Rong Gan
- State Key Lab. of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Ya-Rong Wang
- State Key Lab. of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Lin Chen
- State Key Lab. of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Hao Zhu
- State Key Lab. of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qing-Qing Sun
- State Key Lab. of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
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19
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Wang Y, Liu E, Gao A, Cao T, Long M, Pan C, Zhang L, Zeng J, Wang C, Hu W, Liang SJ, Miao F. Negative Photoconductance in van der Waals Heterostructure-Based Floating Gate Phototransistor. ACS Nano 2018; 12:9513-9520. [PMID: 30118592 DOI: 10.1021/acsnano.8b04885] [Citation(s) in RCA: 53] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light--matter interactions. However, most light-controlled phenomena and applications in the vdW heterostructures rely on positive photoconductance (PPC). Negative photoconductance (NPC) has not yet been reported in vdW heterostructures. Here we report the observation of the NPC in the ReS2/h-BN/MoS2 vdW heterostructure-based floating gate phototransistor. The fabricated devices exhibit excellent performance of nonvolatile memory without light illumination. More interestingly, we observe a gate-tunable transition between the PPC and the NPC under the light illumination. The observed NPC phenomenon can be attributed to charge transfer between the floating gate and the conduction channel. Furthermore, we show that control of NPC through light intensity is promising in realization of light-tunable multibit memory devices. Our results may enable potential applications in multifunctional memories and optoelectronic devices.
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Affiliation(s)
- Yu Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Erfu Liu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Anyuan Gao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Tianjun Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Mingsheng Long
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Chen Pan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Lili Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Junwen Zeng
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Chenyu Wang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Weida Hu
- National Laboratory for Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
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20
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Hartmann F, Maier P, Rebello Sousa Dias M, Göpfert S, Castelano LK, Emmerling M, Schneider C, Höfling S, Kamp M, Pershin YV, Marques GE, Lopez-Richard V, Worschech L. Nanoscale Tipping Bucket Effect in a Quantum Dot Transistor-Based Counter. Nano Lett 2017; 17:2273-2279. [PMID: 28296417 DOI: 10.1021/acs.nanolett.6b04911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Electronic circuits composed of one or more elements with inherent memory, that is, memristors, memcapacitors, and meminductors, offer lower circuit complexity and enhanced functionality for certain computational tasks. Networks of these elements are proposed for novel computational paradigms that rely on information processing and storage on the same physical platform. We show a nanoscaled memdevice able to act as an electronic analogue of tipping buckets that allows reducing the dimensionality and complexity of a sensing problem by transforming it into a counting problem. The device offers a well adjustable, tunable, and reliable periodic reset that is controlled by the amounts of transferred quantum dot charges per gate voltage sweep. When subjected to periodic voltage sweeps, the quantum dot (bucket) may require up to several sweeps before a rapid full discharge occurs thus displaying period doubling, period tripling, and so on between self-governing reset operations.
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Affiliation(s)
- F Hartmann
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
| | - P Maier
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
| | - M Rebello Sousa Dias
- Departamento de Física, Universidade Federal de São Carlos , 13565-905, São Carlos, São Paulo, Brazil
- Institute for Research in Electronics and Applied Physics, University of Maryland , College Park, Maryland 20742, United States
| | - S Göpfert
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
| | - L K Castelano
- Departamento de Física, Universidade Federal de São Carlos , 13565-905, São Carlos, São Paulo, Brazil
| | - M Emmerling
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
| | - C Schneider
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
| | - S Höfling
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
- SUPA, School of Physics and Astronomy, University of St. Andrews , St. Andrews, KY16 9SS, United Kingdom
| | - M Kamp
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
| | - Y V Pershin
- Department of Physics and Astronomy, University of South Carolina , Columbia, South Carolina 29208, United States
| | - G E Marques
- Departamento de Física, Universidade Federal de São Carlos , 13565-905, São Carlos, São Paulo, Brazil
| | - V Lopez-Richard
- Departamento de Física, Universidade Federal de São Carlos , 13565-905, São Carlos, São Paulo, Brazil
| | - L Worschech
- Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg , Am Hubland, D-97074 Würzburg, Germany
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21
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Abstract
Ultraweak light detection with solid-state and cooling-free photodetectors is important for both fundamental research and practical applications. A general phototransistor architecture for detecting ultraviolet-visible light down to 100 fW cm-2 at room temperature is demonstrated. The exceptional sensitivity stems from an amplification process triggered by incident light. A responsivity of ≈107 A W-1 is achieved.
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Affiliation(s)
- Yang Zhang
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0656, USA
| | - Yongbo Yuan
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0656, USA
| | - Jinsong Huang
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0656, USA
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22
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Li H, Zhou L. Effects of Ambient Air and Temperature on Ionic Gel Gated Single-Walled Carbon Nanotube Thin-Film Transistor and Circuits. ACS Appl Mater Interfaces 2015; 7:22881-22887. [PMID: 26418482 DOI: 10.1021/acsami.5b05727] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Single-walled carbon nanotube thin-film transistor (SWCNT TFT) and circuits were fabricated by fully inkjet printing gold nanoparticles as source/drain electrodes, semiconducting SWCNT thin films as channel materials, PS-PMMA-PS/EMIM TFSI composite gel as gate dielectrics, and PEDOT/PSS as gate electrodes. The ionic gel gated SWCNT TFT shows reversible conversion from p-type transistor behavior in air to ambipolar features under vacuum due to reversible oxygen doping in semiconducting SWCNT thin films. The threshold voltages of ionic gel gated SWCNT TFT and inverters are largely shifted to the low value (0.5 V for p-region and 1.0 V for n-region) by vacuum annealing at 140 °C to exhausively remove water that is incorporated in the ionic gel as floating gates. The vacuum annealed ionic gel gated SWCNT TFT shows linear temperature dependent transconductances and threshold voltages for both p- and n-regions. The strong temperature dependent transconductances (0.08 μS/K for p-region, 0.4 μS/K for n-region) indicate their potential application in thermal sensors. In the other hand, the weak temperature dependent threshold voltages (-1.5 mV/K for p-region, -1.1 mV/K for n-region) reflect their excellent thermal stability.
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Affiliation(s)
- Huaping Li
- Chemelectronics LLC , 440 Hindry Avenue, Unit E, Inglewood, California 90301, United States
| | - Lili Zhou
- Chemelectronics LLC , 440 Hindry Avenue, Unit E, Inglewood, California 90301, United States
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23
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Delbruck T, van Schaik A, Hasler J. Research topic: neuromorphic engineering systems and applications. A snapshot of neuromorphic systems engineering. Front Neurosci 2014; 8:424. [PMID: 25565952 PMCID: PMC4271593 DOI: 10.3389/fnins.2014.00424] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Key Words] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2014] [Accepted: 12/03/2014] [Indexed: 11/17/2022] Open
Affiliation(s)
- Tobi Delbruck
- Institute of Neuroinformatics, University of Zurich and ETH Zurich Zurich, Switzerland
| | - André van Schaik
- Bioelectronics and Neuroscience, The MARCS Institute, University of Western Sydney Sydney, NSW, Australia
| | - Jennifer Hasler
- School of Electrical and Computer Engineering, Georgia Institute of Technology Atlanta, GA, USA
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