Towards Infrared Electronic Eyes: Flexible Colloidal Quantum Dot Photovoltaic Detectors Enhanced by Resonant Cavity

One-Dimensional Crystal-Structure Te-Se Alloy for Flexible Shortwave Infrared Photodetector and Imaging

Flexible shortwave infrared detectors play a crucial role in wearable devices, bioimaging, automatic control, etc. Commercial shortwave infrared detectors face challenges in achieving flexibility due to the high fabrication temperature and rigid material properties. Herein, we develop a high-performance flexible Te0.7Se0.3 photodetector, resulting from the unique 1D crystal structure and small elastic modulus of Te-Se alloying. The flexible photodetector exhibits a broad-spectrum response ranging from 365 to 1650 nm, a fast response time of 6 μs, a broad linear dynamic range of 76 dB, and a specific detectivity of 4.8 × 1010 Jones at room temperature. The responsivity of the flexible detector remains at 93% of its initial value after bending with a small curvature of 3 mm. Based on the optimized flexible detector, we demonstrate its application in shortwave infrared imaging. These results showcase the great potential of Te0.7Se0.3 photodetectors for flexible electronics.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Uncooled High Detectivity Mid-Infrared Photoconductor Using HgTe Quantum Dots and Nanoantennas

Using a metal/insulator/metal (MIM) structure with a gold nanoantenna array made by electron beam lithography, the responsivity of a HgTe colloidal quantum dot film is enhanced in the mid-infrared. Simulations indicate that the spatially averaged peak spectral absorption of an 80 nm film is 60%, enhanced 23-fold compared to that of the same film on a bare sapphire substrate. The field intensity enhancement is focused near the antenna tips, being 20-fold 100 nm away, which represents only 1% of the total area and up to 1000-fold at the tips. The simulated polarized absorption spectra are in good agreement with the experiments, with a strong resonance around 4 μm. A responsivity of 0.6 A/W is obtained at a 1 V bias. Noise measurements separate the 1/f noise from the generation-recombination white noise and give a spatially averaged photoconductive gain of 0.3 at 1 V bias. The spatially averaged peak detectivity is improved 15-fold compared to the same film on a sapphire substrate without an MIM structure. The experimental peak detectivity reaches 9 × 109 Jones at 2650 cm-1 and 80 kHz, decreasing at lower frequencies. The MIM structure also enhances the spatially averaged peak photoluminescence of the CQD film by 16-fold, which is a potential Purcell enhancement. The good agreement between simulations and measurements confirms the viability of lithographically designed nanoantenna structures for vastly improving the performance of mid-IR colloidal quantum dot photoconductors. Further improvements will be possible by matching the optically enhanced and current collection areas.

Short-Wave Infrared Detection and Imaging Employing Size-Customized HgTe Nanocrystals

HgTe nanocrystals (NCs) possess advantages including tunable infrared absorption spectra, solution processability, and low fabrication costs, offering new avenues for the advancement of next-generation infrared detectors. In spite of great synthetic advances, it remains essential to achieve customized synthesis of HgTe NCs in terms of industrial applications. Herein, by taking advantage of a high critical nucleation concentration of HgTe NCs, a continuous-dropwise (CD) synthetic approach that features the addition of the anion precursors in a feasible drop-by-drop fashion is demonstrated. The slow reaction dynamics enable size-customized synthesis of HgTe NCs with sharp band tails and wide absorption range fully covering the short- and mid-infrared regions. More importantly, the intrinsic advantages of CD process ensure high-uniformity and scale-up synthesis from batch to batch without compromising the excitonic features. The resultant HgTe nanocrystal photodetectors show a high room-temperature detectivity of 8.1 × 1011 Jones at 1.7 µm cutoff absorption edge. This CD approach verifies a robust method for controlled synthesis of HgTe NCs and might have important implications for scale-up synthesis of other nanocrystal materials.

Light-Emitting Microfibers from Lotus Root for Eco-Friendly Optical Waveguides and Biosensing

Optical biosensors based on micro/nanofibers are highly valuable for probing and monitoring liquid environments and bioactivity. Most current optical biosensors, however, are still based on glass, semiconductors, or metallic materials, which might not be fully suitable for biologically relevant environments. Here, we introduce biocompatible and flexible microfibers from lotus silk as microenvironmental monitors that exhibit waveguiding of intrinsic fluorescence as well as of coupled light. These features make single-filament monitors excellent building blocks for a variety of sensing functions, including pH probing and detection of bacterial activity. These results pave the way for the development of new and entirely eco-friendly, potentially multiplexed biosensing platforms.

Wavelength Tunable Infrared Perfect Absorption in Plasmonic Nanocrystal Monolayers

The ability to efficiently absorb light in ultrathin (subwavelength) layers is essential for modern electro-optic devices, including detectors, sensors, and nonlinear modulators. Tailoring these ultrathin films' spectral, spatial, and polarimetric properties is highly desirable for many, if not all, of the above applications. Doing so, however, often requires costly lithographic techniques or exotic materials, limiting scalability. Here we propose, demonstrate, and analyze a mid-infrared absorber architecture leveraging monolayer films of nanoplasmonic colloidal tin-doped indium oxide nanocrystals (ITO NCs). We fabricate a series of ITO NC monolayer films using the liquid-air interface method; by synthetically varying the Sn dopant concentration in the NCs, we achieve spectrally selective perfect absorption tunable between wavelengths of two and five micrometers. We achieve monolayer thickness-controlled coupling strength tuning by varying NC size, allowing access to different coupling regimes. Furthermore, we synthesize a bilayer film that enables broadband absorption covering the entire midwave IR region (λ = 3-5 μm). We demonstrate a scalable platform, with perfect absorption in monolayer films only hundredths of a wavelength in thickness, enabling strong light-matter interaction, with potential applications for molecular detection and ultrafast nonlinear optical applications.

Infrared HOT Photodetectors: Status and Outlook

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.

Mercury telluride colloidal quantum-dot focal plane array with planar p-n junctions enabled by in situ electric field-activated doping

Colloidal quantum dot (CQD)-based photodetectors are promising alternatives to bulk semiconductor-based detectors to be monolithically integrated with complementary metal-oxide semiconductor readout integrated circuits avoiding high-cost epitaxial growth methods and complicated flip-bonding processes. To date, photovoltaic (PV) single-pixel detectors have led to the best performance with background-limit infrared photodetection performance. However, the nonuniform and uncontrollable doping methods and complex device configuration restrict the focal plane array (FPA) imagers to operate in PV mode. Here, we propose a controllable in situ electric field-activated doping method to construct lateral p-n junctions in the short-wave infrared (SWIR) mercury telluride (HgTe) CQD-based photodetectors with a simple planar configuration. The planar p-n junction FPA imagers with 640 × 512 pixels (15-μm pixel pitch) are fabricated and exhibit substantially improved performance compared with photoconductor imagers before activation. High-resolution SWIR infrared imaging is demonstrated with great potential for various applications including semiconductor inspection, food safety, and chemical analysis.

Toward next-generation endoscopes integrating biomimetic video systems, nonlinear optical microscopy, and deep learning

According to the World Health Organization, the proportion of the world's population over 60 years will approximately double by 2050. This progressive increase in the elderly population will lead to a dramatic growth of age-related diseases, resulting in tremendous pressure on the sustainability of healthcare systems globally. In this context, finding more efficient ways to address cancers, a set of diseases whose incidence is correlated with age, is of utmost importance. Prevention of cancers to decrease morbidity relies on the identification of precursor lesions before the onset of the disease, or at least diagnosis at an early stage. In this article, after briefly discussing some of the most prominent endoscopic approaches for gastric cancer diagnostics, we review relevant progress in three emerging technologies that have significant potential to play pivotal roles in next-generation endoscopy systems: biomimetic vision (with special focus on compound eye cameras), non-linear optical microscopies, and Deep Learning. Such systems are urgently needed to enhance the three major steps required for the successful diagnostics of gastrointestinal cancers: detection, characterization, and confirmation of suspicious lesions. In the final part, we discuss challenges that lie en route to translating these technologies to next-generation endoscopes that could enhance gastrointestinal imaging, and depict a possible configuration of a system capable of (i) biomimetic endoscopic vision enabling easier detection of lesions, (ii) label-free in vivo tissue characterization, and (iii) intelligently automated gastrointestinal cancer diagnostic.

Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications

Commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrates and bulky cooling systems, which leaves a large development window for the emerging solution-processable semiconductor-based photo-sensing devices. Among the solution-processable semiconductors, mercury (Hg) chalcogenide colloidal quantum dots (QDs) exhibit unique ultra-broad and tuneable photo-responses in the short-wave infrared to far-wave infrared range, and have demonstrated photo-sensing abilities comparable to the commercial products, especially with advances in high operation temperature. Here, we provide a focused review on photodetectors employing Hg chalcogenide colloidal QDs, with a comprehensive summary of the essential progress in the areas of synthesis methods of QDs, property control, device engineering, focus plane array integration, etc. Besides imaging demonstrations, a series of Hg chalcogenide QD photodetector based flexible, integrated, multi-functional applications are also summarized. This review shows prospects for the next-generation low-cost highly-sensitive and compact IR photodetectors based on solution-processable Hg chalcogenide colloidal QDs.

Flexible and Stretchable Carbon-Based Sensors and Actuators for Soft Robots

In recent years, the emergence of low-dimensional carbon-based materials, such as carbon dots, carbon nanotubes, and graphene, together with the advances in materials science, have greatly enriched the variety of flexible and stretchable electronic devices. Compared with conventional rigid devices, these soft robotic sensors and actuators exhibit remarkable advantages in terms of their biocompatibility, portability, power efficiency, and wearability, thus creating myriad possibilities of novel wearable and implantable tactile sensors, as well as micro-/nano-soft actuation systems. Interestingly, not only are carbon-based materials ideal constituents for photodetectors, gas, thermal, triboelectric sensors due to their geometry and extraordinary sensitivity to various external stimuli, but they also provide significantly more precise manipulation of the actuators than conventional centimeter-scale pneumatic and hydraulic robotic actuators, at a molecular level. In this review, we summarize recent progress on state-of-the-art flexible and stretchable carbon-based sensors and actuators that have creatively added to the development of biomedicine, nanoscience, materials science, as well as soft robotics. In the end, we propose the future potential of carbon-based materials for biomedical and soft robotic applications.

Synthesis of 2-DOF Decoupled Rotation Stage with FEA-Based Neural Network

Transfer printing technology has developed rapidly in the last decades, offering a potential demand for 2-DOF rotation stages. In order to remove decoupling modeling, improve motion accuracy, and simplify the control method, the 2-DOF decoupled rotation stages based on compliant mechanisms present notable merits. Therefore, a novel 2-DOF decoupled rotation stage is synthesized of which the critical components of decoupling are the topological arrangement and a novel decoupled compound joint. To fully consider the undesired deformation of rigid segments, an FEA-based neural network model is utilized to predict the rotation strokes and corresponding coupling ratios, and optimize the structural parameters. Then, FEA simulations are conducted to investigate the static and dynamic performances of the proposed 2-DOF decoupled rotation stage. The results show larger rotation strokes of 4.302 mrad in one-axis actuation with a 1.697% coupling ratio, and 4.184 and 4.151 mrad in two-axis actuation with undesired Rz rotation of 0.014 mrad with fewer actuators than other works. In addition, the first natural frequency of 2151 Hz is also higher, enabling a wider working frequency range.

Scaling infrared detectors-status and outlook

The predicted 'Law 19' benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared (IR) detectors and make the dream of Elliott and colleagues, who in 1999 wrote thatthere is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view(Elliottet al1999Appl. Phys. Lett.742881). This circumstance will make it possible to achieve in the near future the room-temperature IR arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption. In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focussed on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.

Direct Optical Lithography Enabled Multispectral Colloidal Quantum-Dot Imagers from Ultraviolet to Short-Wave Infrared

Complementary metal oxide semiconductor (CMOS) silicon sensors play a central role in optoelectronics with widespread applications from small cell phone cameras to large-format imagers for remote sensing. Despite numerous advantages, their sensing ranges are limited within the visible (0.4-0.7 μm) and near-infrared (0.8-1.1 μm) range , defined by their energy gaps (1.1 eV). However, below or above that spectral range, ultraviolet (UV) and short-wave infrared (SWIR) have been demonstrated in numerous applications such as fingerprint identification, night vision, and composition analysis. In this work, we demonstrate the implementation of multispectral broad-band CMOS-compatible imagers with UV-enhanced visible pixels and SWIR pixels by layer-by-layer direct optical lithography of colloidal quantum dots (CQDs). High-resolution single-color images and merged multispectral images were obtained by using one imager. The photoresponse nonuniformity (PRNU) is below 5% with a 0% dead pixel rate and room-temperature responsivities of 0.25 A/W at 300 nm, 0.4 A/W at 750 nm, and 0.25 A/W at 2.0 μm.

Helmholtz Resonator Applied to Nanocrystal-Based Infrared Sensing

While the integration of nanocrystals as an active medium for optoelectronic devices progresses, light management strategies are becoming required. Over recent years, several photonic structures (plasmons, cavities, mirrors, etc.) have been coupled to nanocrystal films to shape the absorption spectrum, tune the directionality, and so on. Here, we explore a photonic equivalent of the acoustic Helmholtz resonator and propose a design that can easily be fabricated. This geometry combines a strong electromagnetic field magnification and a narrow channel width compatible with efficient charge conduction despite hopping conduction. At 80 K, the device reaches a responsivity above 1 A·W^-1 and a detectivity above 10¹¹ Jones (3 μm cutoff) while offering a significantly faster time-response than vertical geometry diodes.

Ultrasensitive Colloidal Quantum-Dot Upconverters for Extended Short-Wave Infrared

Infrared-to-visible upconverters converting low-energy infrared to higher-energy visible light without bringing in complicated readout integrated circuits have triggered enormous excitement. However, existing upconverters suffer from limited sensing wavelengths, low photon-to-photon (p-p) efficiency, and high minimum detectable infrared power. Here, we reported the colloidal quantum-dot (CQD) upconverters with unprecedented performance. By using HgTe CQDs as the sensing layer, the operation spectral ranges of the upconverters are, for the first time, extended to short-wave infrared. More importantly, the resistance-area products of the HgTe CQD photodetectors are carefully optimized by interface engineering to match with the visible light-emitting diodes so that the quantum efficiency and sensitivity of upconverters can be maximized. The integrated upconverters demonstrate a high p-p efficiency of nearly 30% and a low detection limit down to 20 μW cm^-2.

Advances in Emerging Photonic Memristive and Memristive-Like Devices

Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

Room-Temperature Infrared Photodetectors with Zero-Dimensional and New Two-Dimensional Materials

Infrared photodetectors have received much attention for several decades due to their broad applications in the military, science, and daily life. However, for achieving an ideal signal-to-noise ratio and a very fast response, cooling is necessary in those devices, which makes them bulky and costly. Thus, room-temperature infrared photodetectors have emerged as a hot research direction. Novel low-dimensional materials with their easy fabrication and excellent photoelectronic properties provide a possible solution for room-temperature infrared photodetectors. This review aims to summarize the preparation methods and characterization of several low-dimensional materials (PbS, PbSe and HgTe, new two-dimensional materials) with great concern and the room-temperature infrared photodetectors based on them.

Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices

Colloidal quantum dot (QD), a solution-processable nanoscale optoelectronic building block with well-controlled light absorption and emission properties, has emerged as a promising material system capable of interacting with various photonic structures. Integrated QD/photonic structures have been successfully realized in many optical and optoelectronic devices, enabling enhanced performance and/or new functionalities. In this review, the recent advances in this research area are summarized. In particular, the use of four typical photonic structures, namely, diffraction gratings, resonance cavities, plasmonic structures, and photonic crystals, in modulating the light absorption (e.g., for solar cells and photodetectors) or light emission (e.g., for color converters, lasers, and light emitting diodes) properties of QD-based devices is discussed. A brief overview of QD-based passive devices for on-chip photonic circuit integration is also presented to provide a holistic view on future opportunities for QD/photonic structure-integrated optoelectronic systems.

Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity

Nanocrystals (NCs) have gained considerable attention for their broadly tunable absorption from the UV to the THz range. Nevertheless, their optical features suffer from a lack of tunability once integrated into optoelectronic devices. Here, we show that bias tunable aspectral response is obtained by coupling a HgTe NC array with a plasmonic resonator. Up to 15 meV blueshift can be achieved from a 3 μm absorbing wavelength structure under a 3 V bias voltage when the NC exciton is coupled with a mode of the resonator. We demonstrate that the blueshift arises from the interplay between hopping transport and inhomogeneous absorption due to the presence of the photonic structure. The observed tunable spectral response is qualitatively reproduced in simulation by introducing a bias-dependent diffusion length in the charge transport. This work expands the realm of existing NC-based devices and paves the way toward light modulators.

Simulation of Monolithically Integrated Meta-Lens with Colloidal Quantum Dot Infrared Detectors for Enhanced Absorption

Colloidal quantum dots (CQDs) have been intensively investigated over the past decades in various fields for both light detection and emission applications due to their advantages like low cost, large-scale production, and tunable spectral absorption. However, current infrared CQD detectors still suffer from one common problem, which is the low absorption rate limited by CQD film thickness. Here, we report a simulation study of CQD infrared detectors with monolithically integrated meta-lenses as light concentrators. The design of the meta-lens for 4 μm infrared was investigated and simulation results show that light intensity in the focused region is ~20 times higher. Full device stacks were also simulated, and results show that, with a meta-lens, high absorption of 80% can be achieved even when the electric area of the CQD detectors was decreased by a factor of 64. With higher absorption and a smaller detector area, the employment of meta-lenses as optical concentrators could possibly improve the detectivity by a factor of 32. Therefore, we believe that integration of CQD infrared detectors with meta-lenses could serve as a promising route towards high performance infrared optoelectronics.

Advances of Sensitive Infrared Detectors with HgTe Colloidal Quantum Dots

The application of infrared detectors based on epitaxially grown semiconductors such as HgCdTe, InSb and InGaAs is limited by their high cost and difficulty in raising operating temperature. The development of infrared detectors depends on cheaper materials with high carrier mobility, tunable spectral response and compatibility with large-scale semiconductor processes. In recent years, the appearance of mercury telluride colloidal quantum dots (HgTe CQDs) provided a new choice for infrared detection and had attracted wide attention due to their excellent optical properties, solubility processability, mechanical flexibility and size-tunable absorption features. In this review, we summarized the recent progress of HgTe CQDs based infrared detectors, including synthesis, device physics, photodetection mechanism, multi-spectral imaging and focal plane array (FPA).

Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature

Narrow bandgap semiconductor-based photodetectors often suffer from high room-temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3-hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodetection up to 2400 nm wavelength range at room temperature. The active layer of the phototransistor consists of HgTe QDs well dispersed in a P3HT matrix. Fourier-transform infrared spectra confirm that chemical grafting between P3HT and HgTe QDs is realized after undergoing prolonged coblend stirring and a ligand exchange process. Thanks to the shifting of the charge transport into the P3HT and the partial passivation of the surface traps of HgTe QDs in the blend, the P3HT: HgTe QD hybrid phototransistor shows significantly improved gate-voltage tuning, 15 times faster response, and ≈80% reduction in the noise level compared to a pristine HgTe QD control device. More than 1011 Jones specific detectivity (estimated from the noise spectral density measured at 1 kHz) is achieved at room temperature, and the response time (measured at 22 mW cm-2 illumination intensity) of the device is less than 1.5 µs. That is comparable to commercial epitaxially grown IR photodetectors operated in the same wavelength range.

Reconfigurable 2D/0D p-n Graphene/HgTe Nanocrystal Heterostructure for Infrared Detection

Nanocrystals are promising building blocks for the development of low-cost infrared optoelectronics. Gating a nanocrystal film in a phototransistor geometry is commonly proposed as a strategy to tune the signal-to-noise ratio by carefully controlling the carrier density within the semiconductor. However, the performance improvement has so far been quite marginal. With metallic electrodes, the gate dependence of the photocurrent follows the gate-induced change of the dark current. Graphene presents key advantages: (i) infrared transparency that allows back-side illumination, (ii) vertical electric field transparency, and (iii) carrier selectivity under gate bias. Here, we investigate a configuration of 2D/0D infrared photodetectors taking advantage of a high capacitance ionic glass gate, large-scale graphene electrodes, and a HgTe nanocrystals layer of high carrier mobility. The introduction of graphene electrodes combined with ionic glass enables one to reconfigure selectively the HgTe nanocrystals and the graphene electrodes between electron-doped (n) and hole-doped (p) states. We unveil that this functionality enables the design a 2D/0D p-n junction that expands throughout the device, with a built-in electric field that assists charge dissociation. We demonstrate that, in this specific configuration, the signal-to-noise ratio for infrared photodetection can be enhanced by 2 orders of magnitude, and that photovoltaic operation can be achieved. The detectivity now reaches 10⁹ Jones, whereas the device only absorbs 8% of the incident light. Additionally, the time response of the device is fast (<10 μs), which strongly contrasts with the slow response commonly observed for 2D/0D mixed-dimensional heterostructures, where larger photoconduction gains come at the cost of slower response.

Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses

The gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO₂ or the use of electrolyte. SiO₂ allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolytes, thanks to large capacitances, lead to the significant reduction of operating bias but are limited to slow and quasi-room-temperature operation. None of these operating conditions are optimal for narrow-band-gap nanocrystal-based phototransistors, for which the necessary large-capacitance gate has to be combined with low-temperature operation. Here, we explore the use of a LaF₃ ionic glass as a high-capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 μF·cm^-2. We unveil the unique property of ionic glass gate to enable the unprecedented tunability of both magnitude and dynamics of the photocurrent thanks to high charge-doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal-to-noise ratio can be improved by a factor of 100 and the time response accelerated by a factor of 6. Moreover, the good transparency of LaF₃ substrate allows back-side illumination in the infrared range, which is highly valuable for the design of phototransistors.

A colloidal quantum dot infrared photodetector and its use for intraband detection

Wavefunction engineering using intraband transition is the most versatile strategy for the design of infrared devices. To date, this strategy is nevertheless limited to epitaxially grown semiconductors, which lead to prohibitive costs for many applications. Meanwhile, colloidal nanocrystals have gained a high level of maturity from a material perspective and now achieve a broad spectral tunability. Here, we demonstrate that the energy landscape of quantum well and quantum dot infrared photodetectors can be mimicked from a mixture of mercury selenide and mercury telluride nanocrystals. This metamaterial combines intraband absorption with enhanced transport properties (i.e. low dark current, fast time response and large thermal activation energy). We also integrate this material into a photodiode with the highest infrared detection performances reported for an intraband-based nanocrystal device. This work demonstrates that the concept of wavefunction engineering at the device scale can now be applied for the design of complex colloidal nanocrystal-based devices.

The field of wavefunction engineering using intraband transition to design infrared devices has been limited to epitaxially grown semiconductors. Here the authors demonstrate that a device with similar energy landscape can be obtained from a mixture of colloidal quantum dots made of HgTe and HgSe.