1
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Zhang H, Prado Y, Alchaar R, Lehouelleur H, Cavallo M, Dang TH, Khalili A, Bossavit E, Dabard C, Ledos N, Silly MG, Madouri A, Fournier D, Utterback JK, Pierucci D, Parahyba V, Potet P, Darson D, Ithurria S, Bartłomiej Szafran, Diroll BT, Climente JI, Lhuillier E. Infrared Imaging Using Thermally Stable HgTe/CdS Nanocrystals. Nano Lett 2024. [PMID: 38608158 DOI: 10.1021/acs.nanolett.4c00907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Transferring nanocrystals (NCs) from the laboratory environment toward practical applications has raised new challenges. HgTe appears as the most spectrally tunable infrared colloidal platform. Its low-temperature synthesis reduces the growth energy cost yet also favors sintering. Once coupled to a read-out circuit, the Joule effect aggregates the particles, leading to a poorly defined optical edge and large dark current. Here, we demonstrate that CdS shells bring the expected thermal stability (no redshift upon annealing, reduced tendency to form amalgams, and preservation of photoconduction after an atomic layer deposition process). The electronic structure of these confined particles is unveiled using k.p self-consistent simulations showing a significant exciton binding energy of ∼200 meV. After shelling, the material displays a p-type behavior that favors the generation of photoconductive gain. The latter is then used to increase the external quantum efficiency of an infrared imager, which now reaches 40% while presenting long-term stability.
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Affiliation(s)
- Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Henri Lehouelleur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Sorbonne Paris Cité, Paris 75005, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
- Synchrotron SOLEIL, Saint-Aubin 91190, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Nicolas Ledos
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | | | - Ali Madouri
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay, C2N, Palaiseau 91120, France
| | - Daniele Fournier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Debora Pierucci
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
| | - Victor Parahyba
- New Imaging Technologies SA, Verrières le Buisson 91370, France
| | - Pierre Potet
- New Imaging Technologies SA, Verrières le Buisson 91370, France
| | - David Darson
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Sorbonne Paris Cité, Paris 75005, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, Paris 75005, France
| | - Bartłomiej Szafran
- Faculty of Physics and Applied Computer Science, AGH University, Kraków PL-30-059, Poland
| | - Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Juan I Climente
- Departament de Quimica Fisica i Analitica, Universitat Jaume I, Castello de la Plana E-12080, Spain
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, Paris 75005, France
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2
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Cavallo M, Alchaar R, Bossavit E, Zhang H, Dang TH, Khalili A, Prado Y, Silly MG, Utterback JK, Ithurria S, Dudin P, Avila J, Pierucci D, Lhuillier E. Inside a nanocrystal-based photodiode using photoemission microscopy. Nanoscale 2023. [PMID: 37158270 DOI: 10.1039/d3nr00999h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
As nanocrystal-based devices gain maturity, a comprehensive understanding of their electronic structure is necessary for further optimization. Most spectroscopic techniques typically examine pristine materials and disregard the coupling of the active material to its actual environment, the influence of an applied electric field, and possible illumination effects. Therefore, it is critical to develop tools that can probe device in situ and operando. Here, we explore photoemission microscopy as a tool to unveil the energy landscape of a HgTe NC-based photodiode. We propose a planar diode stack to facilitate surface-sensitive photoemission measurements. We demonstrate that the method gives direct quantification of the diode's built-in voltage. Furthermore, we discuss how it is affected by particle size and illumination. We show that combining SnO2 and Ag2Te as electron and hole transport layers is better suited for extended-short-wave infrared materials than materials with larger bandgaps. We also identify the effect of photodoping over the SnO2 layer and propose a strategy to overcome it. Given its simplicity, the method appears to be of utmost interest for screening diode design strategies.
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Affiliation(s)
- Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Mathieu G Silly
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Pavel Dudin
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - José Avila
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Debora Pierucci
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
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3
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Cavallo M, Bossavit E, Zhang H, Dabard C, Dang TH, Khalili A, Abadie C, Alchaar R, Mastrippolito D, Prado Y, Becerra L, Rosticher M, Silly MG, Utterback JK, Ithurria S, Avila J, Pierucci D, Lhuillier E. Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy. Nano Lett 2023; 23:1363-1370. [PMID: 36692377 DOI: 10.1021/acs.nanolett.2c04637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As the field of nanocrystal-based optoelectronics matures, more advanced techniques must be developed in order to reveal the electronic structure of nanocrystals, particularly with device-relevant conditions. So far, most of the efforts have been focused on optical spectroscopy, and electrochemistry where an absolute energy reference is required. Device optimization requires probing not only the pristine material but also the material in its actual environment (i.e., surrounded by a transport layer and an electrode, in the presence of an applied electric field). Here, we explored the use of photoemission microscopy as a strategy for operando investigation of NC-based devices. We demonstrate that the method can be applied to a variety of materials and device geometries. Finally, we show that it provides direct access to the metal-semiconductor interface band bending as well as the distance over which the gate effect propagates in field-effect transistors.
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Affiliation(s)
- Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Dario Mastrippolito
- Department of Physical and Chemical Sciences (DSFC), University of L'Aquila, Via Vetoio, 67100 L'Aquila, Italy
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Loïc Becerra
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Michael Rosticher
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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4
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Salazar R, Varotto S, Vergnaud C, Garcia V, Fusil S, Chaste J, Maroutian T, Marty A, Bonell F, Pierucci D, Ouerghi A, Bertran F, Le Fèvre P, Jamet M, Bibes M, Rault J. Visualizing Giant Ferroelectric Gating Effects in Large-Scale WSe 2/BiFeO 3 Heterostructures. Nano Lett 2022; 22:9260-9267. [PMID: 36394996 DOI: 10.1021/acs.nanolett.2c02448] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc.) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO3, a room-temperature multiferroic oxide, and WSe2, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe2 is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO3 films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe2 and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO3. Such a strong shift opens new perspectives in the efficient manipulation of TMD properties by proximity effects.
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Affiliation(s)
- Raphaël Salazar
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, F-91190Saint-Aubin, France
| | - Sara Varotto
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, 91767Palaiseau, France
| | - Céline Vergnaud
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000Grenoble, France
| | - Vincent Garcia
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, 91767Palaiseau, France
| | - Stéphane Fusil
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, 91767Palaiseau, France
| | - Julien Chaste
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120Palaiseau, France
| | - Thomas Maroutian
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120Palaiseau, France
| | - Alain Marty
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000Grenoble, France
| | - Frédéric Bonell
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000Grenoble, France
| | - Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120Palaiseau, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120Palaiseau, France
| | - François Bertran
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, F-91190Saint-Aubin, France
| | - Patrick Le Fèvre
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, F-91190Saint-Aubin, France
| | - Matthieu Jamet
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000Grenoble, France
| | - Manuel Bibes
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, 91767Palaiseau, France
| | - Julien Rault
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, F-91190Saint-Aubin, France
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5
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Zribi J, Pierucci D, Bisti F, Zheng B, Avila J, Khalil L, Ernandes C, Chaste J, Oehler F, Pala M, Maroutian T, Hermes I, Lhuillier E, Pan A, Ouerghi A. Unidirectional Rashba spin splitting in single layer WS 2(1-x)Se 2xalloy. Nanotechnology 2022; 34:075705. [PMID: 36347029 DOI: 10.1088/1361-6528/aca0f6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS1.4Se0.6alloys. The electronic structure of this alloy, explored using angle resolved photoemission spectroscopy, shows a clear valence band structure anisotropy characterized by two paraboloids shifted in one direction of thek-space by a constant in-plane vector. This band splitting is a signature of a unidirectional Rashba spin splitting with a related giant Rashba parameter of 2.8 ± 0.7 eV Å. The combination of angle resolved photoemission spectroscopy with piezo force microscopy highlights the link between this giant unidirectional Rashba spin splitting and an in-plane polarization present in the alloy. These peculiar anisotropic properties of the WS1.4Se0.6alloy can be related to local atomic orders induced during the growth process due the different size and electronegativity between S and Se atoms. This distorted crystal structure combined to the observed macroscopic tensile strain, as evidenced by photoluminescence, displays electric dipoles with a strong in-plane component, as shown by piezoelectric microscopy. The interplay between semiconducting properties, in-plane spontaneous polarization and giant out-of-plane Rashba spin-splitting in this 2D material has potential for a wide range of applications in next-generation electronics, piezotronics and spintronics devices.
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Affiliation(s)
- Jihene Zribi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Federico Bisti
- Dipartimento di Scienze Fisiche e Chimiche, Università dell'Aquila, Via Vetoio 10, I-67100 L'Aquila, Italy
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - José Avila
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F-91192 Gif sur Yvette Cedex, France
| | - Lama Khalil
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Cyrine Ernandes
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Julien Chaste
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Fabrice Oehler
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Marco Pala
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Thomas Maroutian
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Ilka Hermes
- Park Systems Europe GmbH. Schildkroetstrasse 15, D-68199 Mannheim, Germany
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
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6
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Abadie C, Paggi L, Fabas A, Khalili A, Dang TH, Dabard C, Cavallo M, Alchaar R, Zhang H, Prado Y, Bardou N, Dupuis C, Xu XZ, Ithurria S, Pierucci D, Utterback JK, Fix B, Vincent G, Bouchon P, Lhuillier E. Helmholtz Resonator Applied to Nanocrystal-Based Infrared Sensing. Nano Lett 2022; 22:8779-8785. [PMID: 36190814 DOI: 10.1021/acs.nanolett.2c02769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While the integration of nanocrystals as an active medium for optoelectronic devices progresses, light management strategies are becoming required. Over recent years, several photonic structures (plasmons, cavities, mirrors, etc.) have been coupled to nanocrystal films to shape the absorption spectrum, tune the directionality, and so on. Here, we explore a photonic equivalent of the acoustic Helmholtz resonator and propose a design that can easily be fabricated. This geometry combines a strong electromagnetic field magnification and a narrow channel width compatible with efficient charge conduction despite hopping conduction. At 80 K, the device reaches a responsivity above 1 A·W-1 and a detectivity above 1011 Jones (3 μm cutoff) while offering a significantly faster time-response than vertical geometry diodes.
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Affiliation(s)
- Claire Abadie
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Laura Paggi
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Alice Fabas
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Adrien Khalili
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Tung Huu Dang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Corentin Dabard
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Mariarosa Cavallo
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Rodolphe Alchaar
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Huichen Zhang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Yoann Prado
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Nathalie Bardou
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Christophe Dupuis
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Debora Pierucci
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - James K Utterback
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Baptiste Fix
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Grégory Vincent
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Patrick Bouchon
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
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7
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Khalil L, Pierucci D, Velez-Fort E, Avila J, Vergnaud C, Dudin P, Oehler F, Chaste J, Jamet M, Lhuillier E, Pala M, Ouerghi A. Hybridization and localized flat band in the WSe 2/MoSe 2heterobilayer. Nanotechnology 2022; 34:045702. [PMID: 36252554 DOI: 10.1088/1361-6528/ac9abe] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2022] [Accepted: 10/17/2022] [Indexed: 06/16/2023]
Abstract
Nearly localized moiré flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals WSe2/MoSe2heterobilayer grown by molecular beam epitaxy. This flat band is localized near the Fermi level and has a width of several hundred meVs. By combining ARPES measurements with density functional theory calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band atKis determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Γ point. The energy difference between the VBM at Γ and theKpoint is of -60 meV, which is a stark difference compared to individual single monolayer WSe2and monolayer WSe2, showing both a VBM atK.
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Affiliation(s)
- Lama Khalil
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Emilio Velez-Fort
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-Spintec, F-38054, Grenoble, France
| | - José Avila
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, F-91192 Gif sur Yvette, France
| | - Céline Vergnaud
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-Spintec, F-38054, Grenoble, France
| | - Pavel Dudin
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, F-91192 Gif sur Yvette, France
| | - Fabrice Oehler
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Julien Chaste
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Matthieu Jamet
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-Spintec, F-38054, Grenoble, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Marco Pala
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
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8
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Pierini S, Capitani F, Scimeca M, Kozlov S, Pierucci D, Alchaar R, Abadie C, Khalili A, Cavallo M, Dang TH, Zhang H, Bossavit E, Gréboval C, Avila J, Baptiste B, Klotz S, Sahu A, Feuillet-Palma C, Xu XZ, Ouerghi A, Ithurria S, Utterback JK, Sauvage S, Lhuillier E. Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure. J Phys Chem Lett 2022; 13:6919-6926. [PMID: 35867700 DOI: 10.1021/acs.jpclett.2c01636] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
While HgTe nanocrystals (NCs) in the mid-infrared region have reached a high level of maturity, their far-infrared counterparts remain far less studied, raising the need for an in-depth investigation of the material before efficient device integration can be considered. Here, we explore the effect of temperature and pressure on the structural, spectroscopic, and transport properties of HgTe NCs displaying an intraband absorption at 10 THz. The temperature leads to a very weak modulation of the spectrum as opposed to what was observed for strongly confined HgTe NCs. HgTe NC films present ambipolar conduction with a clear prevalence of electron conduction as confirmed by transistor and thermoelectric measurements. Under the application of pressure, the material undergoes phase transitions from the zinc blende to cinnabar phase and later to the rock salt phase which we reveal using joint X-ray diffraction and infrared spectroscopy measurements. We discuss how the pressure existence domain of each phase is affected by the particle size.
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Affiliation(s)
- Stefano Pierini
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | | | - Michael Scimeca
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Sergei Kozlov
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, Saint-Aubin, BP48, 91190 Saint-Aubin, France
| | - Benoit Baptiste
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Stefan Klotz
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Ayaskanta Sahu
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Cheryl Feuillet-Palma
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sebastien Sauvage
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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9
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Pierucci D, Mahmoudi A, Silly M, Bisti F, Oehler F, Patriarche G, Bonell F, Marty A, Vergnaud C, Jamet M, Boukari H, Lhuillier E, Pala M, Ouerghi A. Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe 2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy. Nanoscale 2022; 14:5859-5868. [PMID: 35362486 DOI: 10.1039/d2nr00458e] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane X-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshift of about 0.56 eV toward the Fermi level with respect to the VBM of the WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.
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Affiliation(s)
- Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Aymen Mahmoudi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Mathieu Silly
- Synchrotron-SOLEIL, Université Paris-Saclay, Saint-Aubin, BP48, F91192 Gif sur Yvette, France
| | - Federico Bisti
- Dipartimento di Scienze Fisiche e Chimiche, Università dell'Aquila, Via Vetoio 10, 67100 L'Aquila, Italy
| | - Fabrice Oehler
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Frédéric Bonell
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Alain Marty
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Céline Vergnaud
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Matthieu Jamet
- Université Grenoble Alpes, CNRS, CEA, Grenoble INP, IRIG-Spintec, 38054, Grenoble, France
| | - Hervé Boukari
- Université Grenoble Alpes, CNRS and Grenoble INP, Institut Néel, F-38000 Grenoble, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Marco Pala
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
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10
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Pierucci D, Silly M, Tissot H, Hollander P, Sirotti F, Rochet F. Surface Photovoltage dynamics at passivated silicon surfaces: influence of substrate doping and surface termination. Faraday Discuss 2022; 236:442-460. [DOI: 10.1039/d1fd00107h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We have monitored the temporal evolution of the band bending at controlled silicon surfaces after a fs laser pump excitation. Time-resolved surface photo-voltage (SPV) experiments were performed using time resolved...
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11
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Livache C, Izquierdo E, Martinez B, Dufour M, Pierucci D, Keuleyan S, Cruguel H, Becerra L, Fave JL, Aubin H, Ouerghi A, Lacaze E, Silly MG, Dubertret B, Ithurria S, Lhuillier E. Charge Dynamics and Optolectronic Properties in HgTe Colloidal Quantum Wells. Nano Lett 2017; 17:4067-4074. [PMID: 28598629 DOI: 10.1021/acs.nanolett.7b00683] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We investigate the electronic and transport properties of HgTe 2D colloidal quantum wells. We demonstrate that the material can be made p- or n-type depending on the capping ligands. In addition to the control of majority carrier type, the surface chemistry also strongly affects the photoconductivity of the material. These transport measurements are correlated with the electronic structure determined by high resolution X-ray photoemission. We attribute the change of majority carriers to the strong hybridization of an n-doped HgS layer resulting from capping the HgTe nanoplatelets by S2- ions. We further investigate the gate and temperature dependence of the photoresponse and its dynamics. We show that the photocurrent rise and fall times can be tuned from 100 μs to 1 ms using the gate bias. Finally, we use time-resolved photoemission spectroscopy as a probe of the transport relaxation to determine if the observed dynamics are limited by a fundamental process such as trapping. These pump probe surface photovoltage measurements show an even faster relaxation in the 100-500 ns range, which suggests that the current performances are rather limited by geometrical factors.
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Affiliation(s)
- Clément Livache
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Eva Izquierdo
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Bertille Martinez
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Marion Dufour
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Debora Pierucci
- Institut Néel, CNRS-UJF , BP 166, 38042 Grenoble Cedex 9, France
| | - Sean Keuleyan
- Voxtel, Inc., University of Oregon, CAMCOR, 1241 University of Oregon , Eugene, Oregon 97403, United States
| | - Hervé Cruguel
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Loic Becerra
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Jean Louis Fave
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Hervé Aubin
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
| | - Emmanuelle Lacaze
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Benoit Dubertret
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-ParisTech, PSL Research University, Sorbonne Université UPMC Univ. Paris 06, CNRS , 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Institut des NanoSciences de Paris, Sorbonne Universités, UPMC Univ. Paris 06, CNRS-UMR 7588 , 4 place Jussieu, 75005 Paris, France
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12
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Silly MG, Ferté T, Tordeux MA, Pierucci D, Beaulieu N, Chauvet C, Pressacco F, Sirotti F, Popescu H, Lopez-Flores V, Tortarolo M, Sacchi M, Jaouen N, Hollander P, Ricaud JP, Bergeard N, Boeglin C, Tudu B, Delaunay R, Luning J, Malinowski G, Hehn M, Baumier C, Fortuna F, Krizmancic D, Stebel L, Sergo R, Cautero G. Pump-probe experiments at the TEMPO beamline using the low-α operation mode of Synchrotron SOLEIL. J Synchrotron Radiat 2017; 24:886-897. [PMID: 28664896 DOI: 10.1107/s1600577517007913] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2017] [Accepted: 05/28/2017] [Indexed: 06/07/2023]
Abstract
The SOLEIL synchrotron radiation source is regularly operated in special filling modes dedicated to pump-probe experiments. Among others, the low-α mode operation is characterized by shorter pulse duration and represents the natural bridge between 50 ps synchrotron pulses and femtosecond experiments. Here, the capabilities in low-α mode of the experimental set-ups developed at the TEMPO beamline to perform pump-probe experiments with soft X-rays based on photoelectron or photon detection are presented. A 282 kHz repetition-rate femtosecond laser is synchronized with the synchrotron radiation time structure to induce fast electronic and/or magnetic excitations. Detection is performed using a two-dimensional space resolution plus time resolution detector based on microchannel plates equipped with a delay line. Results of time-resolved photoelectron spectroscopy, circular dichroism and magnetic scattering experiments are reported, and their respective advantages and limitations in the framework of high-time-resolution pump-probe experiments compared and discussed.
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Affiliation(s)
- Mathieu G Silly
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Tom Ferté
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000 Strasbourg, France
| | - Marie Agnes Tordeux
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Debora Pierucci
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Nathan Beaulieu
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Christian Chauvet
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Federico Pressacco
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Fausto Sirotti
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Horia Popescu
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Victor Lopez-Flores
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Marina Tortarolo
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Maurizio Sacchi
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Nicolas Jaouen
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Philippe Hollander
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Jean Paul Ricaud
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Nicolas Bergeard
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000 Strasbourg, France
| | - Christine Boeglin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, F-67000 Strasbourg, France
| | - Bharati Tudu
- Sorbonne Universités, UPMC Université Paris VI, CNRS, Laboratoire de Chimie Physique - Matière et Rayonnement, Paris 75005, France
| | - Renaud Delaunay
- Sorbonne Universités, UPMC Université Paris VI, CNRS, Laboratoire de Chimie Physique - Matière et Rayonnement, Paris 75005, France
| | - Jan Luning
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint Aubin, Gif sur Yvette 91192, France
| | - Gregory Malinowski
- P2M - Institut Jean Lamour UMR7198, CNRS - Université de Lorraine, Vandoeuvre-les-Nancy 54506, France
| | - Michel Hehn
- P2M - Institut Jean Lamour UMR7198, CNRS - Université de Lorraine, Vandoeuvre-les-Nancy 54506, France
| | - Cédric Baumier
- CSNSM, Université Paris Sud and CNRS/IN2P3, Batiment 104 et 108, Orsay 91405, France
| | - Franck Fortuna
- CSNSM, Université Paris Sud and CNRS/IN2P3, Batiment 104 et 108, Orsay 91405, France
| | - Damjan Krizmancic
- Laboratorio TASC, IOM-CNR, SS 14 Km 163.5, Basovizza, I-34149 Trieste, Italy
| | - Luigi Stebel
- ELETTRA Sincrotrone Trieste SCpA, Area Science Park, Strada Statale 14 Km 163.5, I-34012 Basovizza, Italy
| | - Rudi Sergo
- ELETTRA Sincrotrone Trieste SCpA, Area Science Park, Strada Statale 14 Km 163.5, I-34012 Basovizza, Italy
| | - Giuseppe Cautero
- ELETTRA Sincrotrone Trieste SCpA, Area Science Park, Strada Statale 14 Km 163.5, I-34012 Basovizza, Italy
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13
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Pierucci D, Henck H, Ben Aziza Z, Naylor CH, Balan A, Rault JE, Silly MG, Dappe YJ, Bertran F, Le Fèvre P, Sirotti F, Johnson ATC, Ouerghi A. Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide. ACS Nano 2017; 11:1755-1761. [PMID: 28146631 DOI: 10.1021/acsnano.6b07661] [Citation(s) in RCA: 46] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in monolayered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.
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Affiliation(s)
- Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
| | - Hugo Henck
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
| | - Zeineb Ben Aziza
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
| | - Carl H Naylor
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
| | - Adrian Balan
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
| | - Julien E Rault
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Yannick J Dappe
- SPEC, CEA, CNRS, Université Paris-Saclay , CEA Saclay, F91191 Gif-sur-Yvette Cedex, France
| | - François Bertran
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Patrick Le Fèvre
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - A T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France
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14
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Ben Aziza Z, Henck H, Pierucci D, Silly MG, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A. van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties. ACS Nano 2016; 10:9679-9686. [PMID: 27715006 DOI: 10.1021/acsnano.6b05521] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by molecular beam epitaxy on graphene. Reflection high-energy electron diffraction images exhibited sharp streaky features indicative of a high-quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW heterointerface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting to an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of the few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relative to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high-resolution X-ray photoemission spectroscopy measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow a deeper understanding of the interlayer interactions and the electronic structure of the GaSe/graphene vdW heterostructure.
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Affiliation(s)
- Zeineb Ben Aziza
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Hugo Henck
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Emmanuel Lhuillier
- Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP , F-75005 Paris, France
- CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP) , F-75005 Paris, France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mahmoud Eddrief
- Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP , F-75005 Paris, France
- CNRS, UMR 7588, Institut des NanoSciences de Paris (INSP) , F-75005 Paris, France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, Université Paris-Saclay , C2N-Marcoussis, 91460 Marcoussis, France
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15
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Pierucci D, Brumme T, Girard JC, Calandra M, Silly MG, Sirotti F, Barbier A, Mauri F, Ouerghi A. Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer. Sci Rep 2016; 6:33487. [PMID: 27629702 PMCID: PMC5024167 DOI: 10.1038/srep33487] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2016] [Accepted: 08/24/2016] [Indexed: 11/28/2022] Open
Abstract
The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Different spectra are observed and are attributed to the existence of two stable polytypes of trilayer: Bernal (ABA) and rhomboedreal (ABC) staking. Their electronic properties strongly depend on the charge transfer from the substrate. We show that the LDOS of ABC stacking shows an additional peak located above the Dirac point in comparison with the LDOS of ABA stacking. The observed LDOS features, reflecting the underlying symmetry of the two polytypes, were reproduced by explicit calculations within density functional theory (DFT) including the charge transfer from the substrate. These findings demonstrate the pronounced effect of stacking order and charge transfer on the electronic structure of trilayer or few layer graphene. Our approach represents a significant step toward understand the electronic properties of graphene layer under electrical field.
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Affiliation(s)
- Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N–Marcoussis, 91460 Marcoussis, France
| | - Thomas Brumme
- Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, UMR CNRS 7590, Sorbonne Universités, UPMC, Univ. Paris VI, MNHN, IRD, 4 Place Jussieu, 75005 Paris, France
- Max Planck Institute for the Structure and Dynamics of Matter, Luruper Chaussee 149, 22761 Hamburg, Germany
| | - Jean-Christophe Girard
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N–Marcoussis, 91460 Marcoussis, France
| | - Matteo Calandra
- Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, UMR CNRS 7590, Sorbonne Universités, UPMC, Univ. Paris VI, MNHN, IRD, 4 Place Jussieu, 75005 Paris, France
| | - Mathieu G. Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Antoine Barbier
- Service de Physique de l’Etat Condensé, DSM/IRAMIS/SPEC, CEA-CNRS UMR 3680, CEA-Saclay, F-91191 Gif-sur-Yvette, France
| | - Francesco Mauri
- Departimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
- Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N–Marcoussis, 91460 Marcoussis, France
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16
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Pierucci D, Henck H, Avila J, Balan A, Naylor CH, Patriarche G, Dappe YJ, Silly MG, Sirotti F, Johnson ATC, Asensio MC, Ouerghi A. Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures. Nano Lett 2016; 16:4054-4061. [PMID: 27281693 DOI: 10.1021/acs.nanolett.6b00609] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition when the bulk dimension is reduced to a single monolayer. Here, we present an exhaustive study of the band alignment and relativistic properties of a van der Waals heterostructure formed between single layers of MoS2 and graphene. A sharp, high-quality MoS2-graphene interface was obtained and characterized by micro-Raman spectroscopy, high-resolution X-ray photoemission spectroscopy (HRXPS), and scanning high-resolution transmission electron microscopy (STEM/HRTEM). Moreover, direct band structure determination of the MoS2/graphene van der Waals heterostructure monolayer was carried out using angle-resolved photoemission spectroscopy (ARPES), shedding light on essential features such as doping, Fermi velocity, hybridization, and band-offset of the low energy electronic dynamics found at the interface. We show that, close to the Fermi level, graphene exhibits a robust, almost perfect, gapless, and n-doped Dirac cone and no significant charge transfer doping is detected from MoS2 to graphene. However, modification of the graphene band structure occurs at rather larger binding energies, as the opening of several miniband-gaps is observed. These miniband-gaps resulting from the overlay of MoS2 and the graphene layer lattice impose a superperiodic potential.
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Affiliation(s)
- Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
| | - Hugo Henck
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
| | - Jose Avila
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Adrian Balan
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, United States
- LICSEN, NIMBE, CEA, CNRS, Université Paris Saclay , CEA Saclay, 91191 Gif-sur-Yvette, France
| | - Carl H Naylor
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, United States
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
| | - Yannick J Dappe
- SPEC, CEA, CNRS, Université Paris Saclay , CEA Saclay, 91191 Gif-sur-Yvette Cedex, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - A T Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104 6396, United States
| | - Maria C Asensio
- Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, 91460 Marcoussis, France
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17
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Pierucci D, Henck H, Naylor CH, Sediri H, Lhuillier E, Balan A, Rault JE, Dappe YJ, Bertran F, Fèvre PL, Johnson ATC, Ouerghi A. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures. Sci Rep 2016; 6:26656. [PMID: 27246929 PMCID: PMC4894673 DOI: 10.1038/srep26656] [Citation(s) in RCA: 68] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2016] [Accepted: 05/03/2016] [Indexed: 11/09/2022] Open
Abstract
Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.
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Affiliation(s)
- Debora Pierucci
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Hugo Henck
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Carl H. Naylor
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
| | - Haikel Sediri
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Emmanuel Lhuillier
- Institut des Nanosciences de Paris, UPMC, 4 place Jussieu,
boîte courrier 840, 75252
Paris cedex 05, France
| | - Adrian Balan
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
- Laboratoire d’Innovation en Chimie des Surfaces et
Nanosciences, DSM/NIMBE/LICSEN (CNRS UMR 3685), CEA Saclay,
91191
Gif-sur-Yvette Cedex, France
| | - Julien E. Rault
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - Yannick J. Dappe
- SPEC, CEA, CNRS, Universite Paris-Saclay, CEA Saclay,
91191 Gif-sur-Yvette Cedex, France
| | - François Bertran
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - Patrick Le Fèvre
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - A. T. Charlie Johnson
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
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18
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Hajlaoui M, Sediri H, Pierucci D, Henck H, Phuphachong T, Silly MG, de Vaulchier LA, Sirotti F, Guldner Y, Belkhou R, Ouerghi A. High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001). Sci Rep 2016; 6:18791. [PMID: 26739366 PMCID: PMC4704025 DOI: 10.1038/srep18791] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/09/2015] [Accepted: 11/09/2015] [Indexed: 11/09/2022] Open
Abstract
The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)(1/2) dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm(2)·V(-1)·s(-1) at 4 K.
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Affiliation(s)
- Mahdi Hajlaoui
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France.,Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Haikel Sediri
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
| | - Debora Pierucci
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
| | - Hugo Henck
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
| | - Thanyanan Phuphachong
- Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre &Marie Curie-Sorbonne Universités, 24 rue Lhomond, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Louis-Anne de Vaulchier
- Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre &Marie Curie-Sorbonne Universités, 24 rue Lhomond, 75005 Paris, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Yves Guldner
- Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre &Marie Curie-Sorbonne Universités, 24 rue Lhomond, 75005 Paris, France
| | - Rachid Belkhou
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Abdelkarim Ouerghi
- CNRS- Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
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19
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Sediri H, Pierucci D, Hajlaoui M, Henck H, Patriarche G, Dappe YJ, Yuan S, Toury B, Belkhou R, Silly MG, Sirotti F, Boutchich M, Ouerghi A. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure. Sci Rep 2015; 5:16465. [PMID: 26585245 PMCID: PMC4653732 DOI: 10.1038/srep16465] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2015] [Accepted: 10/05/2015] [Indexed: 11/24/2022] Open
Abstract
Stacking various two-dimensional atomic crystals is a feasible approach to creating unique multilayered van der Waals heterostructures with tailored properties. Herein for the first time, we present a controlled preparation of large-area h-BN/graphene heterostructures via a simple chemical deposition of h-BN layers on epitaxial graphene/SiC(0001). Van der Waals forces, which are responsible for the cohesion of the multilayer system, give rise to an abrupt interface without interdiffusion between graphene and h-BN, as shown by X-ray Photoemission Spectroscopy (XPS) and direct observation using scanning and High-Resolution Transmission Electron Microscopy (STEM/HRTEM). The electronic properties of graphene, such as the Dirac cone, remain intact and no significant charge transfer i.e. doping, is observed. These results are supported by Density Functional Theory (DFT) calculations. We demonstrate that the h-BN capped graphene allows the fabrication of vdW heterostructures without altering the electronic properties of graphene.
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Affiliation(s)
- Haikel Sediri
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Debora Pierucci
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Mahdi Hajlaoui
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France.,Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Hugo Henck
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Gilles Patriarche
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
| | - Yannick J Dappe
- SPEC, CEA, CNRS, Université Paris Saclay, CEA Saclay, 91191, Gif-Sur-Yvette, France
| | - Sheng Yuan
- Laboratoire des Multimatériaux et Interfaces, UMR CNRS 5615, Université Lyon I, Université de Lyon, France
| | - Bérangère Toury
- Laboratoire des Multimatériaux et Interfaces, UMR CNRS 5615, Université Lyon I, Université de Lyon, France
| | - Rachid Belkhou
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mathieu G Silly
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Fausto Sirotti
- Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France
| | - Mohamed Boutchich
- GeePs, CNRS UMR8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Université Paris-Saclay, route de Nozay, F-91460 Marcoussis, France
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20
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Günes F, Arezki H, Pierucci D, Alamarguy D, Alvarez J, Kleider JP, Dappe YJ, Ouerghi A, Boutchich M. Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid. Nanotechnology 2015; 26:445702. [PMID: 26457876 DOI: 10.1088/0957-4484/26/44/445702] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Chemical doping of graphene is a key process for the modulation of its electronic properties and the design and fabrication of graphene-based nanoelectronic devices. Here, we study the adsorption of diluted concentrations of nitric acid (HNO3) onto monolayer graphene/4H-SiC (0001) to induce a variation of the graphene work function (WF). Raman spectroscopy indicates an increase in the defect density subsequent to the doping. Moreover, ultraviolet photoemission spectroscopy (UPS) was utilized to quantify the WF shift. UPS data show that the WF of the graphene layer decreased from 4.3 eV (pristine) down to 3.8 eV (30% HNO3) and then increased to 4.4 eV at 100% HNO3 concentration. These observations were confirmed using density functional theory (DFT) calculations. This straightforward process allows a large WF modulation, rendering the molecularly modified graphene/4H-SiC(0001) a highly suitable electron or hole injection electrode.
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Affiliation(s)
- Fethullah Günes
- GeePs, CNRS UMR8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France. Department of Materials Science and Engineering, Izmir Kâtip Çelebi University Cigli Main Campus, 35620, IZMIR, Turkey
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21
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Pierucci D, Sediri H, Hajlaoui M, Girard JC, Brumme T, Calandra M, Velez-Fort E, Patriarche G, Silly MG, Ferro G, Soulière V, Marangolo M, Sirotti F, Mauri F, Ouerghi A. Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene. ACS Nano 2015; 9:5432-9. [PMID: 25893537 DOI: 10.1021/acsnano.5b01239] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.
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Affiliation(s)
- Debora Pierucci
- †Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
| | - Haikel Sediri
- †Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
| | - Mahdi Hajlaoui
- †Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
- ‡Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Cedex Gif sur Yvette, France
| | - Jean-Christophe Girard
- †Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
| | - Thomas Brumme
- §Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, UMR CNRS 7590, Sorbonne Universités, UPMC, Univ. Paris VI, MNHN, IRD, 4 place Jussieu, 75005 Paris, France
| | - Matteo Calandra
- §Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, UMR CNRS 7590, Sorbonne Universités, UPMC, Univ. Paris VI, MNHN, IRD, 4 place Jussieu, 75005 Paris, France
| | - Emilio Velez-Fort
- †Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
- §Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, UMR CNRS 7590, Sorbonne Universités, UPMC, Univ. Paris VI, MNHN, IRD, 4 place Jussieu, 75005 Paris, France
| | - Gilles Patriarche
- †Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
| | - Mathieu G Silly
- ‡Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Cedex Gif sur Yvette, France
| | - Gabriel Ferro
- ∥Laboratoire des multimateriaux et Interfaces, UMR 5615, Université Claude Bernard Lyon I, 69100 Villeurbanne, France
| | - Véronique Soulière
- ∥Laboratoire des multimateriaux et Interfaces, UMR 5615, Université Claude Bernard Lyon I, 69100 Villeurbanne, France
| | - Massimiliano Marangolo
- ⊥UMR 7588, INSP, Sorbonne Universités, UPMC Univ Paris 06, 4 place Jussieu, F-75005 Paris, France
- #CNRS, UMR 7588, Institut des Nanosciences de Paris, 4 place Jussieu, F-75005 Paris, France
| | - Fausto Sirotti
- ‡Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Cedex Gif sur Yvette, France
| | - Francesco Mauri
- §Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, UMR CNRS 7590, Sorbonne Universités, UPMC, Univ. Paris VI, MNHN, IRD, 4 place Jussieu, 75005 Paris, France
| | - Abdelkarim Ouerghi
- †Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France
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Risterucci P, Held G, Bendounan A, Silly MG, Chauvet C, Pierucci D, Beaulieu N, Sirotti F. Preventing carbon contamination of optical devices for X-rays: the effect of oxygen on photon-induced dissociation of CO on platinum. J Synchrotron Radiat 2012; 19:570-573. [PMID: 22713891 DOI: 10.1107/s090904951202050x] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2011] [Accepted: 05/07/2012] [Indexed: 06/01/2023]
Abstract
Platinum is one of the most common coatings used to optimize mirror reflectivity in soft X-ray beamlines. Normal operation results in optics contamination by carbon-based molecules present in the residual vacuum of the beamlines. The reflectivity reduction induced by a carbon layer at the mirror surface is a major problem in synchrotron radiation sources. A time-dependent photoelectron spectroscopy study of the chemical reactions which take place at the Pt(111) surface under operating conditions is presented. It is shown that the carbon contamination layer growth can be stopped and reversed by low partial pressures of oxygen for optics operated in intense photon beams at liquid-nitrogen temperature. For mirrors operated at room temperature the carbon contamination observed for equivalent partial pressures of CO is reduced and the effects of oxygen are observed on a long time scale.
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Affiliation(s)
- Paul Risterucci
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, F-91192 Gif-sur-Yvette Cedex, France
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23
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Pierucci D, Cicconi S, Bonini P, Ferrelli F, Pastore D, Matteucci C, Marselli L, Marchetti P, Ris F, Halban P, Oberholzer J, Federici M, Cozzolino F, Lauro R, Borboni P, Marlier LN. NGF-withdrawal induces apoptosis in pancreatic beta cells in vitro. Diabetologia 2001; 44:1281-95. [PMID: 11692177 DOI: 10.1007/s001250100650] [Citation(s) in RCA: 54] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
Abstract
AIMS/HYPOTHESIS Using primary cultures of human pancreatic islets, purified human pancreatic beta cells and the mouse beta TC6-F7 cell line, we analysed the expression of nerve growth factor, (NGF/NGF) receptors in beta cells. To investigate whether NGF could sub-serve an autocrine antiapoptotic role in beta cells, we studied the effects of NGF withdrawal using a neutralizing monoclonal anti-NGF antibody. METHODS The expression of NGF and NGF receptors (gp140(Trk-A) and p75(NTR)) were analysed by RT-PCR and immunofluorescence. Pulse-chase experiments and beta cell/PC12 co-cultures were used to investigate NGF production and secretion from beta cells. Possible apoptosis induced by NGF withdrawal was monitored by phosphatidylserine translocation, nucleosomal formation, DNA laddering and FACS analysis. Involvement of transcription/translation mechanisms were investigated as well as the gp140(Trk-A) required. Finally, signal transduction pathways typically involved in apoptotic mechanisms were analysed by western blot analysis. RESULTS We show that NGF and both NGF receptors, gp140(Trk-A) and p75(NTR) are expressed in beta cells where NGF is produced and secreted in a biologically active form. NGF-withdrawal induces beta-cell transcription/translation independent apoptosis but mediated by gp140(Trk-A). Analysis of signal transduction pathways revealed that NGF withdrawal inhibits the PI3-K, protein kinase B (AKT), Bad survival pathway and activates c-Jun kinase (JNK) whereas ERKs and p38 mitogen-activated protein kinase (MAPK) are not affected. Moreover, Bcl-XL, but not Bcl-2 protein expression are reduced. CONCLUSION/INTERPRETATION We suggest that the integrity of the NGF/NGF receptor system and NGF bioavailability participate in controlling beta-cell survival in culture which represents a key issue for improving possibilities for transplantations in the treatment of diabetes.
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Affiliation(s)
- D Pierucci
- Laboratory Molecular Medicine, Department of Internal Medicine, University of Rome Tor Vergata, Rome, Italy
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Bonini P, Pierucci D, Cicconi S, Porzio O, Lauro R, Marlier LN, Borboni P. Neurotrophins and neurotrophin receptors mRNAs expression in pancreatic islets and insulinoma cell lines. JOP 2001; 2:105-11. [PMID: 11870332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 02/23/2023]
Abstract
CONTEXT It is worth noting that islets and betaTC6-F7 cells share a common pattern of expression of neurotrophins and neurotrophin receptors. Recently, several studies have hypothesized a role for nerve growth factor in pancreatic development and maturation, suggesting that nerve growth factor may be a survival factor for pancreatic beta-cells. OBJECTIVE The aim of the present study was to investigate the pattern of expression of neurotrophins and their relative receptors both in rat pancreatic islets and in a wide panel of insulinoma cell lines. MAIN OUTCOME MEASURES A semi-quantitative reverse-transcription polymerase chain reaction analysis was performed on ribonucleic acids extracted from these cells. RESULTS Reverse transcription-polymerase chain reaction analysis demonstrates that brain-derived neurotrophic factor, as well as neurotrophins 3 and 4, are expressed both in islets and in all insulinoma cells, while nerve growth factor is expressed only in islets, betaTC6-F7 cells and, at a low level, in RIN 1046-38 cells. Receptors protein tyrosine kinase A and C are ubiquitously expressed both in islets and insulinoma cells. Tyrosine kinase B is absent in HIT-T15 cells. CONCLUSIONS These data indicate that betaTC6-F7 cells are a suitable model for studying the role of neurotrophins in the survival of beta-cells.
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Affiliation(s)
- P Bonini
- Laboratory of Molecular Medicine, Department of Internal Medicine, University of Rome, Tor Vergata, Rome, Italy
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25
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Massa R, Marliera LN, Martorana A, Cicconi S, Pierucci D, Giacomini P, De Pinto V, Castellani L. Intracellular localization and isoform expression of the voltage-dependent anion channel (VDAC) in normal and dystrophic skeletal muscle. J Muscle Res Cell Motil 2001; 21:433-42. [PMID: 11129434 DOI: 10.1023/a:1005688901635] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Abstract
Voltage-dependent anion channels (VDACs) are a family of pore-forming proteins encoded by different genes, with at least three protein products expressed in mammalian tissues. The major recognized functional role of VDACs is to permit the almost free permeability of the outer mitochondrial membrane (OMM). Although VDAC1 is the best known among VDAC isoforms, its exclusively mitochondrial location is still debated. Therefore, we have measured its co-localization with markers of cellular organelles or compartments in skeletal muscle fibers by single or double immunofluorescence and traditional as well as confocal microscopy. Our results show that VDAC1 immunoreactivity corresponds to mitochondria and sarcoplasmic reticulum, while sarcolemmal reactivity, previously reported, was not observed. Since VDAC1 has been suggested to be involved in the control of oxidative phosphorylation, we sought for possible gene regulation of VDAC1, VDAC2 and VDAC3 in skeletal muscle of the dystrophin-deficient mdx mouse, which suffers of an impaired control of energy metabolism. Our results show that, while VDAC1 mRNA and protein and VDAC2 mRNA are normally expressed. VDAC3 mRNA is markedly down-regulated in mdx mouse muscle at different ages (before, during and after the outburst of myofiber necrosis). This finding suggests a possible involvement of VDAC3 expression in the early pathogenic events of the mdx muscular dystrophy.
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Affiliation(s)
- R Massa
- Dipartimento di Neuroscienze, Laboratorio di Medicina Molecolare, Università di Roma Tor Vergata, Italy.
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26
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Borboni P, Porzio O, Pierucci D, Cicconi S, Magnaterra R, Federici M, Sesti G, Lauro D, D'Agata V, Cavallaro S, Marlier LN. Molecular and functional characterization of pituitary adenylate cyclase-activating polypeptide (PACAP-38)/vasoactive intestinal polypeptide receptors in pancreatic beta-cells and effects of PACAP-38 on components of the insulin secretory system. Endocrinology 1999; 140:5530-7. [PMID: 10579316 DOI: 10.1210/endo.140.12.7208] [Citation(s) in RCA: 34] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
It has been previously demonstrated that pituitary adenylate cyclase-activating polypeptide (PACAP) regulates insulin secretion. PACAP exerts its biological action by binding to at least three different receptor subtypes coupled to different signal transduction mechanisms. The signaling pathways underlying the insulinotropic effect of PACAP involve mainly the activation of adenylate cyclase to form cAMP, which directly and indirectly, through increased intracellular Ca2+, stimulates insulin exocytosis. In the present study we have characterized the functional and molecular expression of PACAP/vasoactive intestinal polypeptide receptors isoforms and subtypes and its isoforms in a beta-cell line and in isolated rat pancreatic islets. Although insulinoma cells express the messenger RNA encoding PAC1 (-R and -hop variants), VPAC1 and VPAC2, binding experiments indicate the preponderance of PAC1 over VPAC 1-2 receptors. We have also shown that the main signaling pathway of PACAP in beta-cells is mediated by adenylate cyclase, whereas the inositol 1,4,5-trisphosphate pathway is almost inactive. Furthermore, we have demonstrated that PACAP exerts long-term effects on beta-cells, such as transcriptional regulation of the insulin gene and genes of the glucose-sensing system (GLUT1 and hexokinase 1).
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Affiliation(s)
- P Borboni
- Department of Internal Medicine, University of Rome Tor Vergata, Italy.
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