Chemical Vapor Deposition Growth of High Crystallinity Sb2 Se3 Nanowire with Strong Anisotropy for Near-Infrared Photodetectors

Recent Advances in Antimony Selenide Photodetectors

Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth-abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive-type and photodiode-type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic-integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.

AuBr3 Induces CsPb(Br/I)3 QDs to Self-Assemble into Nanowires

Perovskite quantum dots can form various forms such as nanowires, nanorods, and nanosheets through self-assembly. Nanoscale self-assembly can be used to fabricate materials with excellent device properties. This study introduces AuBr3 into CsPb(Br/I)3 quantum dots, causing them to assemble into nanowires. The nanowires form because part of Au3+ is surface-doped to replace Pb2+, and the [PbX6]4- octahedral structure is distorted. The symmetry of the structural surface is broken, and a dipole-moment-induced field is generated, thus promoting self-assembly. Moreover, the presence of Au nanoparticles (NPs) causes a localized surface plasmon resonance and generates strong van der Waals forces that promote self-assembly. Finally, to test other applications of perovskite nanowires, the solution method is used to prepare films by compounding the sample solution and polystyrene (PS) for backlighted displays.

Self-Powered and Broadband Photodetectors Based on High-performance Mixed Dimensional Sb2O3/PdTe2/Si Heterojunction for Multiplex Environmental Monitoring

Solar-blind ultraviolet (SBUV) to near-infrared (NIR) broadband photodetectors (BB-PD) have important applications in environmental monitoring and other applications. However, it is challenging to prepare SBUV-IR photosensitive materials via simple steps and to construct SBUV-IR broadband devices for multiplex detection with high sensitivity at different wavelengths. Here, self-powered and broadband photodetectors using a high-performance mixed dimensional Sb2O3 nanorod 1-dimension (1D)/monodisperse microdiamond-like PdTe2 3-dimension (3D)/Si (3D) heterojunction for multiplex detection of environmental pollutants with high sensitivity at broadband wavelength are developed. The 1D/3D mixed dimensional Sb2O3/PdTe2/Si structure combines the advantages of strong light absorption, high carrier transport efficiency of 1D Sb2O3 nanorods, and expansion of interface barrier caused by 3D microdiamond-like PdTe2 interlayer to improve the photocurrent density and self-powered ability. The efficient photogenerated charge separation enables anon/off ratio of more than 5 × 106. The device exhibits excellent photoelectric properties from 255 to 980 nm with the responsivity from 4.56 × 10-2 to 6.55 × 10-1 AW-1, the detectivity from 2.36 × 1012 to 3.39 × 1013 Jones, and the sensitivity from 3.90 × 107 to 1.10 × 1010 cm2 W-1 without external bias. Finally, the proposed device is applied for the multiplex monitoring of environmental pollution gases NO2 with the detection limit of 200 ppb and PM2.5 particles at mild pollution at broadband wavelength. The proposed BB-PD has great potential for multiplex detection of environmental pollutants and other analytes at broadband wavelength.

Sub-micron pixel polarization-sensitive photodetector based on silicon nanowire

Silicon nanowire is a potential candidate to be used as polarization-sensitive material, but the relative mechanism of polarization response must be carried out. Herein, a sub-micron metal-single silicon nanowire-metal photodetector exhibits polarization-sensitive characteristics with an anisotropic photocurrent ratio of 1.59 at 780 nm, an excellent responsivity of 24.58 mA/W, and a high detectivity of 8.88 × 109 Jones at 980 nm. The underlying principle of optical anisotropy in silicon nanowire is attributed to resonance enhancement verified by polarizing light microscopy and simulation. Furthermore, Stokes parameter measurements and imaging are all demonstrated by detecting the characteristics of linearly polarized light and imaging the polarizer array, respectively. Given the maturity of silicon processing, the sub-micron linearly polarized light detection proposed in this study lays the groundwork for achieving highly integrated, simplified processes, and cost-effective on-chip polarization-sensitive optical chips in the future.

Single Quasi-1D Chains of Sb2Se3 Encapsulated within Carbon Nanotubes

The realization of stable monolayers from 2D van der Waals (vdW) solids has fueled the search for exfoliable crystals with even lower dimensionalities. To this end, 1D and quasi-1D (q-1D) vdW crystals comprising weakly bound subnanometer-thick chains have been discovered and demonstrated to exhibit nascent physics in the bulk. Although established micromechanical and liquid-phase exfoliation methods have been applied to access single isolated chains from bulk crystals, interchain vdW interactions with nonequivalent strengths have greatly hindered the ability to achieve uniform single isolated chains. Here, we report that encapsulation of the model q-1D vdW crystal, Sb2Se3, within single-walled carbon nanotubes (CNTs) circumvents the relatively stronger c-axis vdW interactions between the chains and allows for the isolation of single chains with structural integrity. High-resolution transmission electron microscopy and selected area electron diffraction studies of the Sb2Se3@CNT heterostructure revealed that the structure of the [Sb4Se6]n chain is preserved, enabling us to systematically probe the size-dependent properties of Sb2Se3 from the bulk down to a single chain. We show that ensembles of the [Sb4Se6]n chains within CNTs display Raman confinement effects and an emergent band-like absorption onset around 600 nm, suggesting a strong blue shift of the near-infrared band gap of Sb2Se3 into the visible range upon encapsulation. First-principles density functional theory calculations further provided qualitative insight into the structures and interactions that could manifest in the Sb2Se3@CNT heterostructure. Spatial visualization of the calculated electron density difference map of the heterostructure indicated a minimal degree of electron donation from the host CNT to the guest [Sb4Se6]n chain. Altogether, this model system demonstrates that 1D and q-1D vdW crystals with strongly anisotropic vdW interactions can be precisely studied by encapsulation within CNTs with suitable diameters, thereby opening opportunities in understanding dimension-dependent properties of a plethora of emergent vdW solids at or approaching the subnanometer regime.

High-performance visible-near-infrared photodetector based on the N2200/Sb2Se3 nanorod arrays organic-inorganic hybrid heterostructure

Antimony selenide (Sb2Se3) is a suitable candidate for a broadband photodetector owing to its remarkable optoelectronic properties. Achieving a high-performance self-powered photodetector through a desirable heterojunction still needs more efforts to explore. In this work, we demonstrate a broadband photodetector based on the hybrid heterostructure of Sb2Se3 nanorod arrays (NRAs) absorber and polymer acceptor (P(NDI2OD-T2), N2200). Owing to the well-matched energy levels between N2200 and Sb2Se3, the recombination of photogenerated electrons and holes in N2200/Sb2Se3 hybrid heterostructure is greatly inhibited. The photodetector can detect the wavelength from 405 to 980 nm, and exhibit high responsivity of 0.39 A/W and specific detectivity of 1.84 × 1011 Jones at 780 nm without bias voltage. Meanwhile, ultrafast response rise time (0.25 ms) and fall time (0.35 ms) are obtained. Moreover, the time-dependent photocurrent of this heterostructure-based photodetector keeps almost the same value after the storge for 40 days, indicating the excellent stability and reproducibility. These results demonstrate the potential application of a N2200/Sb2Se3 NRAs heterojunction in visible-near-infrared photodetectors.

Synthesis and Broadband Photodetection of a P-Type 1D Van der Waals Semiconductor HfSnS3

1D van der Waals (vdW) materials have attracted significant interest in recent years due to their giant anisotropic and weak interlayer-coupled characters. More 1D vdW materials are urgently to be exploited for satisfying the practice requirement. Herein, the study of 1D vdW ternary HfSnS3 high-quality single crystals grown via the chemical vapor transport technique is reported. The Raman vibration modes and band structure of HfSnS3 are analyzed via DFT calculations. Its strong in-plane anisotropic is verified by the polarized Raman spectroscopy. The field-effect transistors (FETs) based on the HfSnS3 nanowires demonstrate p-type semiconducting behavior as well as outstanding photoresponse in a broadband range from UV to near-infrared (NIR) with short response times of ≈0.355 ms, high responsivity of ≈11.5 A W-1 , detectivity of ≈8.2 × 1011 , external quantum efficiency of 2739%, excellent environmental stability, and repeatability. Furthermore, a typical photoconductivity effect of the photodetector is illustrated. These comprehensive characteristics can promote the application of the p-type 1D vdW material HfSnS3 in optoelectronics.

Polarization-Sensitive Photodetector Based on High Crystallinity Quasi-1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400-800 nm) with high responsivity of 5880 mA W-1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi2S3 photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W-1, 5.55 × 106%, and 3.68 × 1013 Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi2S3 photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi2S3 nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.

Synergistically boosting reaction kinetics and suppressing polyselenide shuttle effect by Ti3C2Tx/Sb2Se3 film anode in high-performance sodium-ion batteries

Antimony selenide (Sb₂Se₃), with rich resources and high electrochemical activity, including in conversion and alloying reactions, has been regarded as an ideal candidate anode material for sodium-ion batteries. However, the severe volume expansion, sluggish kinetics, and polyselenide shuttle of the Sb₂Se₃-based anode lead to serious pulverization at high current density, restricting its industrialization. Herein, a unique structure of Sb₂Se₃ nanowires uniformly anchored between Ti₃C₂T_x (MXene) nanosheets was prepared by the electrostatic self-assembly method. The MXene can impede the volume expansion of Sb₂Se₃ nanowires in the sodiation process. Moreover, the Sb₂Se₃ nanowires can reduce the restacking of Ti₃C₂T_x nanosheets and enhance electrolyte accessibility. Furthermore, density functional theory calculations confirm the increased reaction kinetics and better sodium storage capability through the composite of Ti₃C₂T_x with Sb₂Se₃ and the high adsorption capability of Ti₃C₂T_x to polyselenides. Therefore, the resultant Sb₂Se₃/Ti₃C₂T_x anodes show high rate capability (369.4 mAh/g at 5 A/g) and cycling performance (568.9 and 304.1 mAh/g at 0.1 A/g after 100 cycles and at 1.0 A/g after 500 cycles). More importantly, the full sodium-ion batteries using the Sb₂Se₃/Ti₃C₂T_x anode and Na₃V₂(PO₄)₃/carbon cathode exhibit high energy/power densities and outstanding cycle performance.

Highly Responsive Near-Infrared Si/Sb2Se3 Photodetector via Surface Engineering of Silicon

The development of imaging technology and optical communication demands a photodetector with high responsiveness. As demonstrated by microfabrication and nanofabrication technology advancements, recent progress in plasmonic sensor technologies can address this need. However, these photodetectors have low optical absorption and ineffective charge carrier transport efficiency. Sb₂Se₃ is light-sensitive material with a high absorption coefficient, making it suitable for photodetector applications. We developed an efficient, scalable, low-cost near-infrared (NIR) photodetector based on a nanostructured Sb₂Se₃ film deposited on p-type micropyramidal Si (made via the wet chemical etching process), working on photoconductive phenomena. Our results proved that, at the optimized thickness of the Sb₂Se₃ layer, the proposed Si micropyramidal substrate enhanced the responsivity nearly two times, compared with that of the Sb₂Se₃ deposited on a flat Si reference sample and a glass/Sb₂Se₃ sample at 1064 nm (power density = 15 mW/cm²). More interestingly, the micropyramidal silicon-based device worked at 0 V bias, paving a path for self-bias devices. The highest specific detectivity of 2.25 × 10¹⁵ Jones was achieved at 15 mW/cm² power density at a bias voltage of 0.5 V. It is demonstrated that the enhanced responsivity was closely linked with field enhancement due to the Kretschmann configuration of Si pyramids, which acts as hot spots for Si/Sb₂Se₃ junction. A high responsivity of 47.8 A W^-1 proved it suitable for scalable and cost-effective plasmonic-based NIR photodetectors.

Sb2Se3/CdS/ZnO photodetectors based on physical vapor deposition for color imaging applications

The reported antimony selenide (Sb₂Se₃) photodetectors (PDs) are still far away from color camera applications mainly due to the high operation temperature required in chemical vapor deposition (CVD) and the lack of high-density PD arrays. In this work, we propose a Sb₂Se₃/CdS/ZnO PD created by physical vapor deposition (PVD) operated at room temperature. Using PVD, a uniform film can be obtained, so the optimized PD has excellent photoelectric performance with high responsivity (250 mA/W), high detectivity (5.6 × 10¹² Jones), low dark current (∼10^-9 A), and short response time (rise: < 200 μs; decay: < 200 μs). With the help of advanced computational imaging technology, we successfully demonstrate color imaging applications by the single Sb₂Se₃ PD; thus, we expect this work can bring Sb₂Se₃ PDs in color camera sensors closer.

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

As a promising solar absorber material, antimony selenide (Sb2Se3) has gained popularity. However, a lack of knowledge regarding material and device physics has slowed the rapid growth of Sb2Se3-based devices. This study compares the experimental and computational analysis of the photovoltaic performance of Sb2Se3-/CdS-based solar cells. We construct a specific device that may be produced in any lab using the thermal evaporation technique. Experimentally, efficiency is improved from 0.96% to 1.36% by varying the absorber's thickness. Experimental information on Sb2Se3, such as the band gap and thickness, is used in the simulation to check the performance of the device after the optimization of various other parameters, including the series and shunt resistance, and a theoretical maximum efficiency of 4.42% is achieved. Further, the device's efficiency is improved to 11.27% by optimizing the various parameters of the active layer. It thus is demonstrated that the band gap and thickness of active layers strongly affect the overall performance of a photovoltaic device.

One dimensional MOSFETs for sub-5 nm high-performance applications: a case of Sb2Se3 nanowires

Low-dimensional materials have been proposed as alternatives to silicon-based field-effect transistor (FET) channel materials in order to overcome the scaling limitation. In the present research, gate-all-around (GAA) Sb₂Se₃ nanowire FETs were simulated using the ab initio quantum transport method. The gate-length (L_g, L_g = 5 nm) GAA Sb₂Se₃ FETs with an underlap (UL, UL = 2, 3 nm) could satisfy the on-state current (I_on) and delay time (τ) of the 2028 requirements for high performance (HP) applications of the International Technology Roadmap for Semiconductors (ITRS) 2013. It is interesting that the L_g = 3 nm GAA Sb₂Se₃ FETs with a UL = 3 nm can meet the I_on, power dissipation (PDP), and τ of the 2028 requirements of ITRS 2013 for HP applications. Therefore, GAA Sb₂Se₃ FETs can be a potential candidate scaling Moore's law downward to 3 nm.

High Performance Polarization-Resolved Photodetectors Based on Intrinsically Stretchable Organic Semiconductors

Polarization-sensitive photodetectors based on anisotropic semiconductors sense both the intensity and polarization state information without extra optical components. Here, a self-powered organic photodetector (OPD) composed of intrinsically stretchable polymer donor PNTB6-Cl and non-fullerene acceptor Y6 is reported. The PNTB6-Cl:Y6 photoactive film accommodates a remarkable 100% strain without fracture, exhibiting a high optical anisotropy of 1.8 after strain alignment. The resulting OPD not only shows an impressive faint-light detection capability (high spectral responsivity of 0.45 A W-1 and high specific detectivity of 1012 Jones), but also has a high anisotropic responsivity ratio of 1.42 under the illumination of parallel and traversed polarized light. To the best of the authors' knowledge, both the detector performance and polarization features are among the best-performing OPDs and polarization-sensitive photodetectors. As a proof-of-concept, polarization-sensitive OPDs are also utilized to set up a polarimetric imaging system and full-Stokes polarimeter. This work explores the potential of highly stretchable organic semiconductors for state-of-art polarization imaging and spectroscopy applications.

Sb2S3/Sb2Se3 heterojunction for high-performance photodetection and hydrogen production

Photoelectrochemical (PEC)-type devices provide promising ways for harvesting solar energy and converting it to electric and chemical energy with a low-cost and simple manufacturing process. However, the high light absorption, fast carrier separation, and low carrier recombination are still great challenges in reaching high performance for PEC devices. As emergent two-dimensional (2D) materials, Sb₂Se₃ and Sb₂S₃ exhibit desirable photoelectric properties due to the narrow bandgap, large optical absorption, and high carrier mobility. Herein, Sb₂S₃/Sb₂Se₃ heterojunction is synthesized by a two-step physical vapor deposition method. The type-II Sb₂S₃/Sb₂Se₃ heterojunction displays excellentphotoelectric properties such as a high photocurrent density (I_ph ∼ 162 µA cm^-2), a high photoresponsivity (R_ph ∼ 3700 µA W^-1), and a fast time response speed (rising time ∼ 2 ms and falling time ∼ 4.5 ms) even in harsh environment (H₂SO₄ electrolyte). Especially, the Sb₂S₃/Sb₂Se₃ shows an excellent self-powered photoresponse (I_ph ∼ 40 µA cm^-2, R_ph ∼ 850 µA W^-1). This increment is attributed to the improvement in light absorption, charge separation, and charge transfer efficiency. Taking these advantages, the Sb₂S₃/Sb₂Se₃ heterojunction also exhibits higher PEC water splitting synergically, which is approximately 3 times larger than that of Sb₂Se₃ and Sb₂S₃. These results pave the way for high-performance PEC devices by integrating 2D narrow bandgap semiconductors.

Tailoring InSb Nanowires for High Thermoelectric Performance Using AAO Template-Assisted Die Casting Process

Herein, we demonstrate a facile technique for the fabrication of one-dimensional indium antimonide (InSb) nanowires using anodic aluminium oxide (AAO) template-assisted vacuum die-casting method. The filling mechanism of the vacuum die-casting process is investigated on varying AAO pore structures through different electrolytes. It is found that the anodizing electrolytes play a vital role in nanowire growth and structure formation. The as-obtained InSb nanowires from the dissolution process show a degree of high crystallinity, homogeneity, and uniformity throughout their structure. The TEM and XRD results elucidated the InSb zinc-blende crystal structure and preferential orientation along the c-axis direction. The thermoelectric characteristics of InSb nanowires were measured with a four-electrode system, and their resistivity, Seebeck coefficient, power factor, thermal conductivity, and ZT have been evaluated. Further, surface-modified nanowires using the reactive-ion etching technique showed a 50% increase in thermoelectric performance.

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 10² A/W and an ultrahigh detectivity of 1.10 × 10¹¹ Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Underwater Multispectral Computational Imaging Based on a Broadband Water-Resistant Sb2Se3 Heterojunction Photodetector

Exploration, utilization, and protection of marine resources are of great significance to the survival and development of mankind. However, currently classical optical cameras suffer information loss, low contrast, and color distortion due to the absorption and scattering nature for the underwater environment. Here, we demonstrate an underwater multispectral computational imaging system combined with single-photodetector imaging algorithm technology and a CdS/Sb₂Se₃ heterojunction photodetector. The computational imaging technology coupled with an advanced Fourier algorithm can capture a scene by a single photodetector without spatial resolution that avoids the need to rely on high-density detectors array and bulky optical components in traditional imaging systems. This convenient computational imaging method provides more flexible possibilities for underwater imaging and promises to give more imaging capabilities (such as multispectral imaging, antiscattering imaging capability) to meet ever-changing demand of underwater imaging. In addition, the water-resistant CdS/Sb₂Se₃ heterojunction photodetector fabricated by the close spaced sublimation (Sb₂Se₃) and chemical bath deposition (CdS) shows excellent self-powered photodetection performance at zero bias with high LDR of 128 dB, broadband response spectrum range of 300-1050 nm, high responsivity up to 0.47 A/W, and high specific detectivity over 5 × 10¹² jones. Compared with the traditional optical imaging system, our designed computational imaging system that combines the advanced Fourier algorithm and a high-performance CdS/Sb₂Se₃ heterojunction photodetector exhibits outstanding antiscattering imaging capability (shielded by frosted glass), weak light imaging capability (∼0.2 μW/cm², corresponding to moonlight intensity), and multispectral imaging capability. Therefore, we believe that this work will boost the progress of marine science.

High-performance dual-mode ultra-thin broadband CdS/CIGS heterojunction photodetector on steel

An ultra-thin CdS/CIGS heterojunction photodiode fabricated on steel firstly exhibits dual-mode broadband photodetection from ultraviolet to near infrared spectrum. In the photovoltaic mode, the CIGS photodiode, working as a self-driven photodetector, shows an outstanding photodetection capability (under a light power density of 20 µW cm^-2 at 680 nm), reaching a record detectivity of ∼4.4×10¹² Jones, a low noise equivalent power (NEP) of 0.16 pW Hz^-1/2 and a high Ilight/Idark ratio of ∼10³, but a relatively low responsivity of ∼0.39 A W^-1 and an external quantum efficiency (EQE) of ∼71%. Working under the same illumination but in the photoconductive mode (1 V reverse bias), the responsivity and EQE are significantly enhanced to 1.24 A W^-1 and 226%, respectively, but with a relatively low detectivity of 7×10¹⁰ Jones and a higher NEP of 10.1 pW Hz^-1/2. To explain these results, a corrected photoconductive gain (G) model indicates that minority electrons could be localized in the defects, surface states and depletion region of the CIGS photodiode, causing excess hole accumulation in the ultra-thin CIGS photodiode and thus high EQE over 100% (G over 1).

High-responsivity, self-driven visible-near infrared Sb2Se3 nanorod array photodetector

Anisotropic antimony selenide (Sb₂Se₃) semiconductor has received considerable attention due to its unique one-dimensional crystal structure and corresponding superior and anisotropic optical and electronic properties. It is a promising material for a wide range of applications related to electronics and optoelectronics. Herein, we demonstrate a high-performance and self-powered Sb₂Se₃ nanorod array-based core/shell heterojunction detector fabricated on glass substate. The detector shows a wide spectral photoresponse range from visible to near-infrared (405-980 nm). The detector yields a detectivity of as high as 2.06×10¹² Jones in the visible light (638 nm) and that of 1.82×10¹² Jones (830 nm) at zero bias. Due to the strong built-in filed and excellent carrier transport, the detector exhibits ultrafast response speed at both rise (30 μs) and decay (68 μs) processes. Further analysis demonstrates that the noise is mainly generated from the 1/f noise in the low frequency range, while it is affected by the shot noise and generation-recombination noise in high frequency.

Integrated polarization-sensitive amplification system for digital information transmission

Polarized light can provide significant information about objects, and can be used as information carrier in communication systems through artificial modulation. However, traditional polarized light detection systems integrate polarizers and various functional circuits in addition to detectors, and are supplemented by complex encoding and decoding algorithms. Although the in-plane anisotropy of low-dimensional materials can be utilized to manufacture polarization-sensitive photodetectors without polarizers, the low anisotropic photocurrent ratio makes it impossible to realize digital output of polarized information. In this study, we propose an integrated polarization-sensitive amplification system by introducing a nanowire polarized photodetector and organic semiconductor transistors, which can boost the polarization sensitivity from 1.24 to 375. Especially, integrated systems are universal in that the systems can increase the anisotropic photocurrent ratio of any low-dimensional material corresponding to the polarized light. Consequently, a simple digital polarized light communication system can be realized based on this integrated system, which achieves certain information disguising and confidentiality effects.

Low-Noise Dual-Band Polarimetric Image Sensor Based on 1D Bi2 S3 Nanowire

With the increasing demand for detection accuracy and sensitivity, dual-band polarimetric image sensor has attracted considerable attention due to better object recognition by processing signals from diverse wavebands. However, the widespread use of polarimetric sensors is still limited by high noise, narrow photoresponse range, and low linearly dichroic ratio. Recently, the low-dimensional materials with intrinsic in-plane anisotropy structure exhibit the great potential to realize direct polarized photodetection. Here, strong anisotropy of 1D layered bismuth sulfide (Bi2 S3 ) is demonstrated experimentally and theoretically. The Bi2 S3 photodetector exhibits excellent device performance, which enables high photoresponsivity (32 A W-1 ), Ion /Ioff ratio (1.08 × 104 ), robust linearly dichroic ratio (1.9), and Hooge parameter (2.0 × 10-5 at 1 Hz) which refer to lower noise than most reported low-dimensional materials-based devices. Impressively, such Bi2 S3 nanowire exhibits a good broadband photoresponse, ranging from ultraviolet (360 nm) to short-wave infrared (1064 nm). Direct polarimetric imaging is implemented at the wavelengths of 532 and 808 nm. With these remarkable features, the 1D Bi2 S3 nanowires show great potential for direct dual-band polarimetric image sensors without using any external optical polarizer.

High-performance polarization-sensitive photodetectors on two-dimensional β -InSe

Two-dimensional (2D) indium selenide (InSe) has been widely studied for application in transistors and photodetectors, which benefit from its excellent optoelectronic properties. Among the three specific polytypes (γ-, ϵ- and β-phase) of InSe, only the crystal lattice of InSe in β-phase (β-InSe) belongs to a non-symmetry point group of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{upgreek} \usepackage{mathrsfs} \setlength{\oddsidemargin}{-69pt} \begin{document} }{}$D_{6h}^4$\end{document}, which indicates stronger anisotropic transport behavior and potential in the polarized photodetection of β-InSe-based optoelectronic devices. Therefore, we prepare the stable p-type 2D-layered β-InSe via temperature gradient method. The anisotropic Raman, transport and photoresponse properties of β-InSe have been experimentally and theoretically proven, showing that the β-InSe-based device has a ratio of 3.76 for the maximum to minimum dark current at two orthogonal orientations and a high photocurrent anisotropic ratio of 0.70 at 1 V bias voltage, respectively. The appealing anisotropic properties demonstrated in this work clearly identify β-InSe as a competitive candidate for filter-free polarization-sensitive photodetectors.

Thermoelectric Generator Using Polyaniline-Coated Sb2Se3/β-Cu2Se Flexible Thermoelectric Films

Herein, Sb2Se3 and β-Cu2Se nanowires are synthesized via hydrothermal reaction and water evaporation-induced self-assembly methods, respectively. The successful syntheses and morphologies of the Sb2Se3 and β-Cu2Se nanowires are confirmed via X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM), and field emission transmission electron microscopy (FE-TEM). Sb2Se3 materials have low electrical conductivity which limits application to the thermoelectric generator. To improve the electrical conductivity of the Sb2Se3 and β-Cu2Se nanowires, polyaniline (PANI) is coated onto the surface and confirmed via Fourier-transform infrared spectroscopy (FT-IR), FE-TEM, and XPS analysis. After coating PANI, the electrical conductivities of Sb2Se3/β-Cu2Se/PANI composites were increased. The thermoelectric performance of the flexible Sb2Se3/β-Cu2Se/PANI films is then measured, and the 70%-Sb2Se3/30%-β-Cu2Se/PANI film is shown to provide the highest power factor of 181.61 μW/m·K2 at 473 K. In addition, a thermoelectric generator consisting of five legs of the 70%-Sb2Se3/30%-β-Cu2Se/PANI film is constructed and shown to provide an open-circuit voltage of 7.9 mV and an output power of 80.1 nW at ΔT = 30 K. This study demonstrates that the combination of inorganic thermoelectric materials and flexible polymers can generate power in wearable or portable devices.

Advances in engineering near-infrared luminescent materials

Near-infrared (NIR) luminescent materials have emerged as a growing field of interest, particularly for imaging and optics applications in biology, chemistry, and physics. However, the development of materials for this and other use cases has been hindered by a range of issues that prevents their widespread use beyond benchtop research. This review explores emerging trends in some of the most promising NIR materials and their applications. In particular, we focus on how a more comprehensive understanding of intrinsic NIR material properties might allow researchers to better leverage these traits for innovative and robust applications in biological and physical sciences.

Thermoelectric properties of antimony selenide hexagonal nanotubes

Antimony selenide (Sb₂Se₃) is a material widely used in photodetectors and relatively new as a possible material for thermoelectric applications. Taking advantage of the new properties after nanoscale fabrication, this material shows great potential for the development of efficient low temperature thermoelectric devices. Here we study the synthesis, the crystal properties and the thermal and thermoelectric transport response of Sb₂Se₃ hexagonal nanotubes (HNT) in the temperature range between 120 and 370 K. HNT have a moderate electrical conductivity ∼10² S m^-1 while maintaining a reasonable Seebeck coefficient ∼430 μV K^-1 at 370 K. The electrical conductivity in Sb₂Se₃ HNT is about 5 orders of magnitude larger and its thermal conductivity one half of what is found in bulk. Moreover, the calculated figure of merit (ZT) at room temperature is the largest value reported in antimony selenide 1D structures.

Synergistically enhanced thermoelectric performance by optimizing the composite ratio between hydrothermal Sb2Se3 and self-assembled β-Cu2Se nanowires

Sb₂Se₃ and β-Cu₂Se nanowires were synthesized via hydrothermal reaction and a water-evaporation induced self-assembly method, respectively, and a 70%-Sb₂Se₃ and 30%-β-Cu₂Se disk pellet shows enhanced thermoelectric performance.

Electrochemical Delamination of Ultralarge Few-Layer Black Phosphorus with a Hydrogen-Free Intercalation Mechanism

Due to strong interlayer interaction and ease of oxidation issues of black phosphorus (BP), the domain size of artificial synthesized few-layer black phosphorus (FL-BP) crystals is often below 10 µm, which extremely limits its further applications in large-area thin-film devices and integrated circuits. Herein, a hydrogen-free electrochemical delamination strategy through weak Lewis acid intercalation enabled exfoliation is developed to produce ultralarge FL-BP single-crystalline domains with high quality. The interaction between the weak Lewis acid tetra-n-butylammonium acetate (CH₃ COOTBA) and P atoms promotes the average domain size of FL-BP crystal up to 77.6 ± 15.0 µm and the largest domain size is found to be as large as 119 µm. The presence of H⁺ and H₂ O is found to sharply decrease the size of as-exfoliated FL-BP flakes. The electronic transport measurements show that the delaminated FL-BP crystals exhibit a high hole mobility of 76 cm² V^-1 s^-1 and an on/off ratio of 10³ at 298 K. A broadband photoresponse from 532 to 1850 nm with ultrahigh responsivity is achieved. This work provides a scalable, simple, and low-cost approach for large-area BP films that meet industrial requirements for nanodevices applications.

Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

Sb2Se3, a quasi-1D structured binary chalcogenide, has great potential as a solar cell light absorber owing to its anisotropic carrier transport and benign grain boundaries when the absorber layer is...

Solution-Processed Sb2Se3 on TiO2 Thin Films Toward Oxidation- and Moisture-Resistant, Self-Powered Photodetectors

Semiconductor-sensitized TiO₂ thin films with long-term air stability are attractive for optoelectronic devices and applications. Herein, we demonstrate the potential of the TiO₂ thin film (∼800 nm in thickness) sensitized with a Sb₂Se₃ layer (∼350 nm) grown from solution spin coating and processed by annealing recrystallization at 300 °C for high-performance optical detection. The type-II band alignment, p-Sb₂Se₃/n-TiO₂ heterojunction, and narrow band gap of Sb₂Se₃ (∼1.25 eV) endow the film photodetector with a large photocurrent, high switching stability and on/off ratio (>10³), and fast response speeds (<20 ms) under the broadband visible-near-infrared irradiation in a zero-bias self-powered photovoltaic mode. In particular, the photodetector shows notable resistance to oxidation and moisture for long-term operation, which is linked to the modest surface oxidation (Sb-O) of Sb₂Se₃, as verified by X-ray photoelectron spectroscopy. The first-principles calculations show that a low and medium concentration of oxygen substitution for Se (O_Se) and oxygen interstitial (O_i) with negative formation energies can lead to such a moderate surface oxidation but do not generate impurity states or just introduce a shallow-level acceptor state in the electronic structures of Sb₂Se₃ without degrading its optoelectronic performance. Our theoretical results offer a rational explanation for the air-stable and oxidation/moisture-resistant characteristics in moderately oxidized Sb₂Se₃ and may shed light on the surface oxidation-property relationship studies of other nonoxide semiconductor-sensitized devices.

High-Crystallinity Epitaxial Sb2Se3 Thin Films on Mica for Flexible Near-Infrared Photodetectors

The V-VI binary chalcogenide, Sb₂Se₃, has attracted considerable attention for its applications in thin film optoelectronic devices because of its unique 1D structure and remarkable optoelectronic properties. Herein, we report an Sb₂Se₃ thin film epitaxially grown on a flexible mica substrate through a relatively weak (van der Waals) interaction by vapor transport deposition. The epitaxial Sb₂Se₃ thin films exhibit a single (120) out-of-plane orientation and a 0.25° full width at half-maximum of (120) rocking curve in X-ray diffraction, confirming the high crystallinity of the epitaxial films. The Sb₂Se₃(120) plane is epitaxially aligned on mica(001) surface with the in-plane relationship of Sb₂Se₃[2̅10]//mica[010] and Sb₂Se₃[001]//mica[100]. Compared to the photodetector made of a nonepitaxial Sb₂Se₃ film, the photocurrent of the epitaxial Sb₂Se₃ film photodetector is almost doubled. Furthermore, because of the flexibility and high sensitivity of the epitaxial Sb₂Se₃ film photodetector on mica, it has been successfully employed to detect the heart rate of a person. These encouraging results will facilitate the development of epitaxial Sb₂Se₃ film-based devices and potential applications in wearable electronics.

Catalyst-free growth of dense γ-In2Se3 nanosheet arrays and their application in photoelectric detectors

In this work, a dense γ-In₂Se₃ nanosheet array has been fabricated using the chemical vapor deposition method under atmospheric pressure. Compared with crystal silicon, the photodetector based on the γ-In₂Se₃/p-Si heterojunction exhibits a high responsivity (96.7 mA W^-1) at the near-infrared region, a presentable current on/off ratio (∼1000) and excellent detectivity (2.03 × 10¹² jones). Simultaneously, the obtained photodetector demonstrated a fast response speed (0.15 ms/0.5 ms) and a broadband sensitive wavelength from ultraviolet (340 nm) to near-infrared (1020 nm). The photoelectric experimental data of the device shows that its high performance is attributed to the high-light absorption capacity of the material, the rational energy band structures of γ-In₂Se₃ and p-Si, and the effective separation of photo-generated carriers caused by the formed type-II heterojunction. Our work provides the primary experimental basis for the photodetection application of the γ-In₂Se₃ nanostructure.

An Integrated Flexible All-Nanowire Infrared Sensing System with Record Photosensitivity

Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art low-dimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA) system that boosts photosensitivity by several orders of magnitude by introducting nanowire field effect transistors (FETs), resulting in a peak photosensitivity of 7.6 × 10⁴ under an illumination of 1342 nm, is presented. Consequently, high-contrast imaging of IR light is obtained on the flexible IRDA arrays. The image information can be then trained and recognized by an artificial neural network for higher image-recognition efficiency. This work provides a new perspective for developing high-performance IR imaging systems, and is expected to undoubtedly enlighten future work on artificial intelligence and biorobotic systems.

Polarization-Sensitive Self-Powered Type-II GeSe/MoS2 van der Waals Heterojunction Photodetector

Polarization-sensitive photodetectors are highly desirable for high-performance optical signal capture and stray light shielding in order to enhance the capability for detection and identification of targets in dark, haze, and other complex environments. Usually, filters and polarizers are utilized for conventional devices to achieve polarization-sensitive detection. Herein, to simplify the optical system, a two-dimensional self-powered polarization-sensitive photodetector is fabricated based on a stacked GeSe/MoS₂ van der Waals (vdW) heterojunction which facilitates efficient separation and transportation of the photogenerated carriers because of type-II band alignment. Accordingly, a high-performance self-powered photodetector is achieved with merits of a very large on-off ratio photocurrent at zero bias of currently 10⁴ and a high responsivity (R_λ) of 105 mA/W with an external quantum efficiency of 24.2%. Furthermore, a broad spectral photoresponse is extended from 380 to 1064 nm owing to the high absorption coefficient in a wide spectral region. One of the key benefits from these highly anisotropic orthorhombic structures of layered GeSe is self-powered polarization-sensitive detection with a peak/valley ratio of up to 2.95. This is realized irradiating with a 532 nm wavelength laser with which a maximum photoresponsivity of up to 590 mA/W is reached when the input polarization is parallel to the armchair direction. This work provides a facile route to fabricate self-powered polarization-sensitive photodetectors from GeSe/MoS₂ vdW heterojunctions for integrated optoelectronic devices.

The High Anisotropy of the Epitaxial Growth of the Well-Aligned Sb2Se3 Nanoribbons on Mica

One-dimensional semiconductor nanostructures, which are different from those of bulk materials, have attracted considerable interest in either scientific research or practical application. Herein, the Sb₂Se₃ nanoribbons have been successfully synthesized by the epitaxial growth process on mica using the rapid physical vapor deposition method. The density of the Sb₂Se₃ nanoribbons increased quickly when the temperature decreased, and finally, the nanoribbons connected to each other and formed a network structure even in film. These nanoribbons were all well aligned along the preferred direction that either is parallel to each other or forms 60° angles. Further structural investigation demonstrated that the Sb₂Se₃ nanoribbons grew along the [001] directions, which are aligned along the directions [11̅0] and [100] or [100] and [110] on the mica surface. Then, an asymmetric lattice mismatch growth mechanism causing incommensurate heteroepitaxial lattice match between the Sb₂Se₃ and mica crystal structure was suggested. Furthermore, a polarized photodetector based on the film with the well-aligned Sb₂Se₃ nanoribbons was constructed, which illustrated strong photosensitivity and high anisotropic in-plane transport either in the dark or under light. The incommensurate heteroepitaxial growth method shown here may provide access to realize well-ordered nanostructures of other inorganic materials and promote the anisotropic photodetector industrialization.

Symmetry-Reduction Enhanced Polarization-Sensitive Photodetection in Core-Shell SbI3 /Sb2 O3 van der Waals Heterostructure

Structural symmetry is a simple way to quantify the anisotropic properties of materials toward unique device applications including anisotropic transportation and polarization-sensitive photodetection. The enhancement of anisotropy can be achieved by artificial symmetry-reduction design. A core-shell SbI₃ /Sb₂ O₃ nanowire, a heterostructure bonded by van der Waals forces, is introduced as an example of enhancing the performance of polarization-sensitive photodetectors via symmetry reduction. The structural, vibrational, and optical anisotropies of such core-shell nanostructures are systematically investigated. It is found that the anisotropic absorbance of a core-shell nanowire is obviously higher than that of two single compounds from both theoretical and experimental investigations. Anisotropic photocurrents of the polarization-sensitive photodetectors based on these core-shell SbI₃ /Sb₂ O₃ van der Waals nanowires are measured ranging from ultraviolet (UV) to visible light (360-532 nm). Compared with other van der Waals 1D materials, low anisotropy ratio (I_max /I_min ) is measured based on SbI₃ but a device based on this core-shell nanowire possesses a relatively high anisotropy ratio of ≈3.14 under 450 nm polarized light. This work shows that the low-symmetrical core-shell van der Waals heterostructure has large potential to be applied in wide range polarization-sensitive photodetectors.

Solution-synthesis of Sb2Se3 nanorods using KSeCN as a molecular selenium source

Potassium selenocyanate (KSeCN) is used as a molecular selenium source to prepare Sb₂Se₃ nanorods, in which selenocyanate (SeCN⁻) anions are thermally decomposed to elemental Se(0) and then reduced to Se²⁻ anions in the organic amine medium.

High-Density Sb2 Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth

Sb₂ Te₃ exhibits several technologically relevant properties, such as high thermoelectric efficiency, topological insulator character, and phase change memory behavior. Improved performances are observed and novel effects are predicted for this and other chalcogenide alloys when synthetized in the form of high-aspect-ratio nanostructures. The ability to grow chalcogenide nanowires and nanopillars (NPs) with high crystal quality in a controlled fashion, in terms of their size and position, can boost the realization of novel thermoelectric, spintronic, and memory devices. Here, it is shown that highly dense arrays of ultrascaled Sb₂ Te₃ NPs can be grown by metal organic chemical vapor deposition (MOCVD) on patterned substrates. In particular, crystalline Sb₂ Te₃ NPs with a diameter of 20 nm and a height of 200 nm are obtained in Au-functionalized, anodized aluminum oxide (AAO) templates with a pore density of ≈5 × 10¹⁰ cm^-2 . Also, MOCVD growth of Sb₂ Te₃ can be followed either by mechanical polishing and chemical etching to produce Sb₂ Te₃ NPs arrays with planar surfaces or by chemical dissolution of the AAO templates to obtain freestanding Sb₂ Te₃ NPs forests. The illustrated growth method can be further scaled to smaller pore sizes and employed for other MOCVD-grown chalcogenide alloys and patterned substrates.