A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation

The construction of lateral p-n junctions is very important and challenging in two-dimensional (2D) semiconductor manufacturing process. Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials. However, interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology. Constructing 2D lateral p-n homojunction is an effective strategy to address these issues. Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction. In this work, we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV. Low-energy implantation can form a shallow implantation depth, which is more suitable for modulating the electrical and optical properties of 2D materials. Hence, we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS2 and successfully realize a precise regulation for WS2 with its conductivity type transforming from n-type to bipolar or even p-type conduction. Furthermore, the universality of this method is demonstrated by extending it to other 2D semiconductors, including WSe2, SnS2 and MoS2. Based on this method, a lateral WS2 p-n homojunction is fabricated, which exhibits significant rectification characteristics. A photodetector based on p-n junction with photovoltaic effect is also prepared, and the open circuit voltage can reach to 0.39 V. This work provides an effective way for controllable doping of 2D semiconductors.

Recent Progress in the Application of Ion Beam Technology in the Modification and Fabrication of Nanostructured Energy Materials

The development of green, renewable energy conversion and storage systems is an urgent task to address the energy crisis and environmental issues in the future. To achieve high performance, stable, and safe operation of energy conversion and storage systems, energy materials need to be modified and fabricated through rationalization. Among various modification and fabrication strategies, ion beam technology has been widely used to introduce various defects/dopants into energy materials and fabricate various nanostructures, where the structure, composition, and property of prefabricated materials can be further accurately tailored to achieve better performance. In this paper, we review the recent progress in the application of ion beam technology in material modification and fabrication, focusing on nanostructured energy materials for energy conversion and storage including photo- (electro-) water splitting, batteries (solar cells, fuel cells, and metal-ion batteries), supercapacitors, thermoelectrics, and hydrogen storage. This review first provides a brief basic overview of ion beam technology and describes the classification and technological advantages of ion beam technology in the modification and fabrication of materials. Then, modification of energy materials by ion beams is reviewed mainly concerning doping and defect introduction. Fabrication of energy materials is also discussed mainly in terms of heterojunctions, nanoparticles, nanocavities, and other nanostructures. In particular, we emphasize the advantages of ion beam technology in improving the performance of energy materials. Finally, we point out our understanding of challenges and future perspectives in applying ion beam technology for the modification and fabrication of energy materials.

Orietation-controlled synthesis and Raman study of 2D SnTe

Tin telluride (SnTe), as a narrow bandgap semiconductor material, has great potential for developing photodetectors with wide spectra and ultra-fast response. At the same time, it is also an important topological crystal insulator material, with different topological surface states on several common surfaces. Here, we introduce different Sn sources and control the growth of regular SnTe nanosheets along the (100) and (111) planes through the atmospheric pressure chemical vapor deposition method. It has been proven through various characterizations that the synthesized SnTe is a high-quality single crystal. In addition, the angular resolved Raman spectra of SnTe nanosheets grown on different crystal planes are first demonstrated. The experimental results showed that square SnTe nanosheets grown along the (100) plane exhibit in-plane anisotropy. At the same time, we use micro-nanofabrication technology to manufacture SnTe-based field effect transistors and photodetectors to explore their electrical and optoelectronic properties. It has been confirmed that transistors based on grown SnTe nanosheets exhibit p-type semiconductor characteristics and have a high response to infrared light. This work provides a new approach for the controllable synthesis of SnTe and adds new content to the research of SnTe-based infrared detectors.

Nitrogen Ion Implantation-Modified Cu Substrate for Stable Lithium Metal Anode

As the only commercialized negative current collector, copper (Cu) foil possesses insurmountable applicational advantages as a lithium metal anode (LMA) substrate. However, the successful usage of Cu foil is limited by the poor Li affinity and crystal face variation, which will lead to severe lithium dendrite growth and poor cyclability. Herein, an industrial-popular ion implantation technique is first adopted for Cu surface modification. With the high-energy implantations of N+ plasma, the unique N-rich transition interface can be formed, among which the lithiophilic CuxNy with extended crystal domains can have uniform Cu crystal faces and offer benefit for Li nucleation/deposition; besides, the induced Li3N-rich SEI with high ionic conductivity can support Li-ion transport kinetics, suppress Li dendrite growth, and mitigate the side reaction to improve LMA stability. Consequently, a uniform Li nucleation/deposition is achieved, with obviously enhanced cycling stability and rate capability for the full cells. This technological maturity ion implantation method can be readily extended to any non/metallic ion species, or joint implantation of bi/multiple ions, and other substrates, demonstrating a possible route to surmount the metal anode challenges.

2D Ferroic Materials for Nonvolatile Memory Applications

The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.

The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology

Nanomaterials with unique structures and functions have been widely used in the fields of microelectronics, biology, medicine, and aerospace, etc. With advantages of high resolution and multi functions (e.g., milling, deposition, and implantation), focused ion beam (FIB) technology has been widely developed due to urgent demands for the 3D fabrication of nanomaterials in recent years. In this paper, FIB technology is illustrated in detail, including ion optical systems, operating modes, and combining equipment with other systems. Together with the in situ and real-time monitoring of scanning electron microscopy (SEM) imaging, a FIB-SEM synchronization system achieved 3D controllable fabrication from conductive to semiconductive and insulative nanomaterials. The controllable FIB-SEM processing of conductive nanomaterials with a high precision is studied, especially for the FIB-induced deposition (FIBID) 3D nano-patterning and nano-origami. As for semiconductive nanomaterials, the realization of high resolution and controllability is focused on nano-origami and 3D milling with a high aspect ratio. The parameters of FIB-SEM and its working modes are analyzed and optimized to achieve the high aspect ratio fabrication and 3D reconstruction of insulative nanomaterials. Furthermore, the current challenges and future outlooks are prospected for the 3D controllable processing of flexible insulative materials with high resolution.

Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials

Two-dimensional (2D) materials are receiving significant attention for both fundamental research and industrial applications due to their unparalleled properties and wide application potential. In this case, the controllable modulation of their structures and properties is essential for the realization and further expansion of their applications. Accordingly, ion beam irradiation techniques, with large scope to adjust parameters, high manufacturing resolution, and a series of advanced equipment being developed, have been demonstrated to have obvious advantages in manipulating the structure and performance of 2D materials. In recent years, many research efforts have been devoted to uncovering the underlying mechanism and control rules regarding ion irradiation induced phenomena in 2D materials, aiming at fulfilling their application potential as soon as possible. Herein, we review the research progress in the interaction between energetic ions and 2D materials based on the energy transfer model, type of ion source, structural modulation, performance modification of 2D materials, and then their application status, aiming to provide useful information for researchers in this field and stimulating more research advances.

Ion irradiation of monolayer graphene-Nd:YAG hybrid waveguides: fabrication and laser

Hybrid waveguides consisting of two-dimensional layered materials pad on the surface of optical waveguides suffer from a nonuniform and loose contact between the two-dimensional material and the waveguide, which can reduce the efficiency of the pulsed laser. Here, we present high-performance passively Q-switched pulsed lasers in three distinct structures of monolayer graphene-Nd:YAG hybrid waveguides irradiated by energetic ions. The ion irradiation enables the monolayer graphene a tight contact and strong coupling with the waveguide. As a result, Q-switched pulsed lasers with narrow pulse width and high repetition rate are obtained in three designed hybrid waveguides. The narrowest pulse width is 43.6 ns, provided by the ion-irradiated Y-branch hybrid waveguide. This study paves the way toward developing on-chip laser sources based on hybrid waveguides by using ion irradiation.

Long-Term Evolution of Vacancies in Large-Area Graphene

Devices based on two-dimensional (2D) materials such as graphene and molybdenum disulfide have shown extraordinary potential in physics, nanotechnology, and electronics. The performances of these applications are heavily affected by defects in utilized materials. Although great efforts have been spent in studying the formation and property of various defects in 2D materials, the long-term evolution of vacancies is still unclear. Here, using a designed program based on the kinetic Monte Carlo method, we systematically investigate the vacancy evolution in monolayer graphene on a long-time and large spatial scale, focusing on the variation of the distribution of different vacancy types. In most cases, the vacancy distribution remains nearly unchanged during the whole evolution, and most of the evolution events are vacancy migrations with a few being coalescences, while it is extremely difficult for multiple vacancies to dissolve. The probabilities of different categories of vacancy evolutions are determined by their reaction rates, which, in turn, depend on corresponding energy barriers. We further study the influences of different factors such as the energy barrier for vacancy migration, coalescence, and dissociation on the evolution, and the coalescence energy barrier is found to be dominant. These findings indicate that vacancies (also subnanopores) in graphene are thermodynamically stable for a long period of time, conducive to subsequent characterizations or applications. Besides, this work provides hints to tune the ultimate vacancy distribution by changing related factors and suggests ways to study the evolution of other defects in various 2D materials.

Electrochemical Signal Amplification Strategies and Their Use in Olfactory and Taste Evaluation

Biosensors are powerful analytical tools used to identify and detect target molecules. Electrochemical biosensors, which combine biosensing with electrochemical analysis techniques, are efficient analytical instruments that translate concentration signals into electrical signals, enabling the quantitative and qualitative analysis of target molecules. Electrochemical biosensors have been widely used in various fields of detection and analysis due to their high sensitivity, superior selectivity, quick reaction time, and inexpensive cost. However, the signal changes caused by interactions between a biological probe and a target molecule are very weak and difficult to capture directly by using detection instruments. Therefore, various signal amplification strategies have been proposed and developed to increase the accuracy and sensitivity of detection systems. This review serves as a reference for biosensor and detector research, as it introduces the research progress of electrochemical signal amplification strategies in olfactory and taste evaluation. It also discusses the latest signal amplification strategies currently being employed in electrochemical biosensors for nanomaterial development, enzyme labeling, and nucleic acid amplification techniques, and highlights the most recent work in using cell tissues as biosensitive elements.

Impact of ion beam irradiation on two-dimensional MoS2: a molecular dynamics simulation study

Two-dimensional (2D) materials such as MoS₂have extraordinary properties and significant application potential in electronics, optoelectronics, energy storage, bioengineering, etc. To realize the numerous application potential, it is needed to modulate the structure and properties of these 2D materials, for which ion beam irradiation has obvious advantages. This research adopted classical molecular dynamics simulations to study the sputtering of atoms in 2D MoS₂, defect formation and the control rule under Ar ion beam irradiation, considering the influence of ion irradiation parameters (i.e., ion beam energy, ion dose), layer number of 2D MoS₂, substrate. Furthermore, the uniaxial mechanical performance of the ion-irradiated nanostructures was investigated for actual applications loading with mechanical stress/strain. This research could provide important theoretical support for fabricating high-performance 2D MoS₂-based nanodevices by ion beam irradiation method.

Defect Engineering of Out-of-Plane Charge Transport in van der Waals Heterostructures for Bi-Direction Photoresponse

Defects are ubiquitous in two-dimensional (2D) transition-metal dichalcogenides (TMDs), generated by the initial growth- or the postprocessing. However, the defects may play negative roles in the photoelectronic properties of TMDs due to the reduction of in-plane transport of carriers. In this work, we demonstrate that the Se-vacancy defects in MoSe₂ side of the van der Waal heterostructure is able to switch direction of out-of-plane charge transport. Photoresponse spectra showed defect density enable modified surface potential of MoSe_2-x, leading to the barrier reverse between graphene and MoSe_2-x and switches of the photoresponse from the negative to the positive. This unexpected property stemmed from appearance of midgap states by defects at heterostructure, as demonstrated by the density functional theory calculation and scanning tunneling microscope results. MoSe_2-0.2/graphene heterostructure has a broadband response ranging from 450 to 1064 nm and exhibits comparable or higher positive responsivity (5.4 × 10³ A/W to -15.3 × 10³ A/W at 632.8 and 5.7 × 10³ A/W to -1.2 × 10³ A/W at 1064 nm) to the negative one of the pristine MoSe₂/graphene. Based on defect-engineered heterostructures, we construct optoelectronic OR and AND logic devices with a broadband operation. Our work elucidates an alternative avenue to tailor the out-of-plane charge transport in TMD-based heterostructure through defects, and potentially invokes applicable utilization for 2D photodetectors and optoelectronic logic gates.

Recent advances in focused ion beam nanofabrication for nanostructures and devices: fundamentals and applications

The past few decades have witnessed growing research interest in developing powerful nanofabrication technologies for three-dimensional (3D) structures and devices to achieve nano-scale and nano-precision manufacturing. Among the various fabrication techniques, focused ion beam (FIB) nanofabrication has been established as a well-suited and promising technique in nearly all fields of nanotechnology for the fabrication of 3D nanostructures and devices because of increasing demands from industry and research. In this article, a series of FIB nanofabrication factors related to the fabrication of 3D nanostructures and devices, including mechanisms, instruments, processes, and typical applications of FIB nanofabrication, are systematically summarized and analyzed in detail. Additionally, current challenges and future development trends of FIB nanofabrication in this field are also given. This work intends to provide guidance for practitioners, researchers, or engineers who wish to learn more about the FIB nanofabrication technology that is driving the revolution in 3D nanostructures and devices.

Neon and helium focused ion beam etching of resist patterns

Helium ion microscopy has attracted many applications in imaging, nanofabrication and analysis. One important field of study in nanofabrication using ion beam is the milling or etching of materials using a helium or neon focused ion beam (FIB), with and without chemical gas assistance. In particular, the neon FIB has a relatively high sputtering rate with a lower probability of swelling and less re-deposition issues compared to a helium FIB. Here, both neon and helium FIB etchings are investigated for milling and repairing electron-beam lithography (EBL) defined hydrogen silsesquioxane (HSQ) and polymethyl methacrylate (PMMA) resist patterns. Different dosages of neon FIB etching result in distinct etching profiles. Using the appropriate doses, arrays of uniform gap with aspect ratio more than 20 can be achieved on HSQ nanostructures. The neon FIB etching has a resolution of 20 nm on HSQ patterns. With XeF₂ assistance, neon FIB etching can be enhanced for etching depth by a factor of ∼1.2. Whereas, helium FIB can also etch thick HSQ patterns, with much lower etch rates. But with XeF₂ assistance, helium FIB etching depth can be enhanced significantly by a factor of around 5. Furthermore, both helium and neon FIB etching methods have been employed to selectively remove residual particles in deep and narrow trenches without affecting the resist patterns. The chemical analysis of these residual particle composition and resist patterns can be also performed using helium ion microscopy coupled with secondary ion mass spectrometry (SIMS) using neon FIB. Besides, a neon FIB can also effectively etch PMMA patterns which are commonly used in nanofabrication and the unwanted connections can be etched away.

A Novel Hierarchical Nanostructure for Enhanced Optical Nonlinearity Based on Scattering Mechanism

Surface modification of nonlinear optical materials (NOMs) is widely applied to fabricate diverse photonic devices, such as frequency combs, modulators, and all-optical switches. In this work, a double-layer nanostructure with heterogeneous nanoparticles (NPs) is proposed to achieve enhanced third-order optical nonlinearity of NOMs. The mechanism of modified optical nonlinearity is elucidated to be the scattering-induced energy transfer between adjacent NPs layers. Based on the LiNbO₃ platform, as a typical example, double layers of embedded Cu and Ag NPs are synthesized by sequential ion implantation, demonstrating twofold magnitude of near-infrared enhancement factor and modulation depth in comparison with a single layer of Cu NPs. With the elastic collision model and thermolysis theory being considered, the shift of the localized surface plasmon resonance (LSPR) peak reveals the formation mechanism of the double-layer nanostructure. Utilizing the enhanced optical nonlinearity of LiNbO₃ as modulators, a Q-switched mode-locked waveguide laser at 1 µm is achieved with shorter pulse duration. It suggests potential applications to improve the performance of nonlinear photonic devices by using double-layer metallic nanostructures.

Atomic-Scale Carving of Nanopores into a van der Waals Heterostructure with Slow Highly Charged Ions

The growing family of 2D materials led not long ago to combining different 2D layers and building artificial systems in the form of van der Waals heterostructures. Tailoring of heterostructure properties postgrowth would greatly benefit from a modification technique with a monolayer precision. However, appropriate techniques for material modification with this precision are still missing. To achieve such control, slow highly charged ions appear ideal as they carry high amounts of potential energy, which is released rapidly upon ion neutralization at the position of the ion. The resulting potential energy deposition is thus limited to just a few atomic layers (in contrast to the kinetic energy deposition). Here, we irradiated a freestanding van der Waals MoS2/graphene heterostructure with 1.3 keV/amu xenon ions in high charge states of 38, which led to nanometer-sized pores that appear only in the MoS2 facing the ion beam, but not in graphene beneath the hole. Reversing the stacking order leaves both layers undamaged, which we attribute to the high conductivity and carrier mobility in graphene acting as a shield for the MoS2 underneath. Our main focus is here on monolayer MoS2, but we also analyzed areas with few-layer structures and observed that the perforation is limited to the two topmost MoS2 layers, whereas deeper layers remain intact. Our results demonstrate that in addition to already being a valuable tool for materials processing, the usability of ion irradiation can be extended to mono- (or bi)layer manipulation of van der Waals heterostructures when the localized potential energy deposition of highly charged ions is also added to the toolbox.

Plasmon-exciton coupling for nanophotonic sensing on chip

The monolayer graphene-noble metallic nanostructure hybrid system with excellent optical characteristic, which is deserved pay attentions in the study of surface-enhanced Raman scattering spectroscopy. In this work, a hybrid sandwich structure is designed to transfer single-layer graphene to the surface of discs substrate covered by silver film and assembly of the dense Au nanoparticles (AuNPs). Blu-ray disc has a cycle density of approximately 5.7 times that of DVD-R due to the different storage capacities of these optical discs. In the research, enhancement effects have been explored for two different periodic grating structures. Compared to spectra of Si/G structure, Graphene Raman spectra from Blu-grating/AuNPs/G structure and Blu-grating/G/AuNPs enhancement multiples at the 2D peak position possesses different Raman responses of 1.09 and 2.51 times, respectively. The sandwich hybrid structure of Ag grating/graphene/AuNPs obtains a Raman enhancement factor (EF) of 6.2×10⁸ for Rhodamine 6G and surface-enhanced Raman Scattering(SERS) detection limit of 0.1 nM. These findings can be attributed to the electric field enhancement of the hybrid structure and the chemical enhancement of graphene. This study provides a new approach for SERS detection and offers a new technique for designing SERS sensors with grapheme-plasmon hybrid structures.

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous research interest for future electronics owing to their atomically thin thickness, compelling properties and various potential applications. However, interface engineering including contact optimization and channel modulations for 2D TMDCs represents fundamental challenges in ultimate performance of ultrathin electronics. This article provides a comprehensive overview of the basic understanding of contacts and channel engineering of 2D TMDCs and emerging electronics benefiting from these varying approaches. In particular, we elucidate multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and as well the novel electronics constructed by interface engineering such as diodes, circuits and memories. Finally, we conclude this review by addressing the current challenges facing 2D TMDCs towards next-generation electronics and offering our insights into future directions of this field.

Evolution of large area TiS2-TiO2 heterostructures and S-doped TiO2 nano-sheets on titanium foils

We report a novel and facile method to synthesize sulfur-doped titanium oxide sheets and realize TiS2-TiO2 heterostructures by means of a sequential sulfurization and oxidation step in a dual-zone chemical vapor deposition furnace. The inclusion of chlorine and argon gases during the growth of such titanium-based compounds plays a critical role in the formation of desired geometries and crystalline structures. These heterostructures possess nano-whisker and nanosheet configurations, controlled by adjusting the growth parameters such as temperature, carrier gas and the sequencing between different steps of the growth. The evolution of these complex heterostructures has been investigated using Raman spectroscopy and EDS characterization. The presence of chlorine gas during the growth results in local TiS2 formation as well as faceted growth of TiO2 nanosheets through anatase to rutile phase change prohibition. The electron microscopy (TEM) images and diffraction pattern (SAED) characterization reveal the crystallinity and layered nature of grown structures, further demonstrating the 2D characteristics of S-doped nanosheets. The evolution of TiO2 on TiS2 heterostructures has also has been verified using XPS analysis. These highly featured nanostructures are suitable candidates to enhance the photocatalytic behavior of TiO2 nanostructures.

Evolution of native defects in ZnO nanorods irradiated with hydrogen ion

This work reports the study on the evolution of native defects in ZnO nanorods irradiated with hydrogen ion. ZnO nanorod arrays grown vertically on silicon substrates were irradiated by 180 keV H⁺ ions to a total fluence of 8.50 × 10¹⁵ ions/cm². The X-ray diffraction spectra, photoluminescence spectra before and after irradiation and the real-time ionoluminescence spectra of the nanorod arrays during the irradiating process were measured. Formation and evolution of defects during H⁺ ion irradiation and effects of irradiation on the crystal structure and optical property were studied. Blue shift of exciton emission, shrink of lattice c and improvement of the crystallinity of ZnO nanorods after irradiation were observed. Simple surface passivation of the nanorods could improve the radiation resistance. Formation and evolution of the defects during H⁺ ion irradiation could be clarified into four stages and the related models are provided.