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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Ayuzawa S, Yamada T, Miyagawa H, Oishi S, Teshima K. Low-temperature Ruby Crystal Growth Via a Supersaturation Process Based on Flux Decomposition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308047. [PMID: 38169109 DOI: 10.1002/smll.202308047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2023] [Revised: 11/25/2023] [Indexed: 01/05/2024]
Abstract
Crystal growth methods that do not require high temperatures are highly needed for the facile growth of oxide single crystals with melting points of several thousand degrees Celsius. This paper represents the first report of a method for the low-temperature growth of ruby crystals (chromium-doped Al2O3) at 750 °C, which is one-third of the conventionally required temperature (2050 °C). In solution-based crystal growth, the target crystal is grown at a temperature considerably lower than its melting point. However, conventional crystal growth processes involving solvent evaporation and cooling require high temperatures to completely liquefy the material, with previously reported solution growth temperatures of ≈1100 °C. Supersaturation based on the decomposition of crystal-solvent intermediates eliminates the need to completely liquefy the material, enabling low-temperature crystal growth. The combination of computational and experimental investigations helps determine the optimum conditions for low-temperature crystal growth. The proposed method is a novel green process that breaks the conventional frontiers of crystal growth while ensuring eco-friendliness and low energy consumption. In addition, its scope can potentially be expanded to the synthesis of various crystals and direct growth on substrates with low melting points.
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Affiliation(s)
- Shunsuke Ayuzawa
- Nagano Prefecture Nanshin Institute of Technology, 8304-190 Minamiminowa, Nagano, 399-4511, Japan
| | - Tetsuya Yamada
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553, Japan
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553, Japan
| | - Hiroh Miyagawa
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553, Japan
| | - Shuji Oishi
- Nagano Prefecture Nanshin Institute of Technology, 8304-190 Minamiminowa, Nagano, 399-4511, Japan
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553, Japan
| | - Katsuya Teshima
- Nagano Prefecture Nanshin Institute of Technology, 8304-190 Minamiminowa, Nagano, 399-4511, Japan
- Department of Materials Chemistry, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553, Japan
- Research Initiative for Supra-Materials, Shinshu University, 4-17-1 Wakasato, Nagano, 380-8553, Japan
- Research Center for Space System Innovation, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba, 278-8510, Japan
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3
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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4
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Chen L, Cheng Z, He S, Zhang X, Deng K, Zong D, Wu Z, Xia M. Large-area single-crystal TMD growth modulated by sapphire substrates. NANOSCALE 2024; 16:978-1004. [PMID: 38112240 DOI: 10.1039/d3nr05400d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Lina Chen
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zhaofang Cheng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
| | - Shaodan He
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Xudong Zhang
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Kelun Deng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Dehua Zong
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zipeng Wu
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Minggang Xia
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
- Shaanxi Province Key Laboratory of Quantum Information and Optoelectronic Quantum Devices, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
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Li S, Lin J, Chen Y, Luo Z, Cheng H, Liu F, Zhang J, Wang S. Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS 2 : Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303511. [PMID: 37749964 DOI: 10.1002/smll.202303511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Revised: 08/25/2023] [Indexed: 09/27/2023]
Abstract
Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalcogenides is significant for the performance tuning of nanoelectronic devices. Here, the low-voltage aberration-corrected transmission electron microscopy with an in situ heating holder and a fast frame rate camera to investigate the sulfur vacancy lines in monolayer MoS2 is applied. Vacancy concentration-dependent growth anisotropy is discovered, displaying first lengthening and then broadening of line defects as the vacancy densifies. With the temperature increase from 20 °C to 800 °C, the defect morphology evolves from a dense triangular network to an ultralong linear structure due to the temperature-sensitive vacancy migration process. Atomistic dynamics of line defect reconstruction on the millisecond time scale are also captured. Density functional theory calculations, Monte Carlo simulation, and configurational force analysis are implemented to understand the growth and reconstruction mechanisms at relevant time and length scales. Throughout the work, high-resolution imaging is closely combined with quantitative analysis of images involving thousands of atoms so that the atomic-level structure and the large-area statistical rules are obtained simultaneously. The work provides new ideas for balancing the accuracy and universality of discoveries in the TEM study and will be helpful to the controlled sculpture of nanomaterials.
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Affiliation(s)
- Shouheng Li
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410073, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jinguo Lin
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P.R. China
| | - Yun Chen
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Zheng Luo
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Haifeng Cheng
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410073, P. R. China
| | - Feng Liu
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P.R. China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, 518055, P. R. China
| | - Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410073, P. R. China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, 518055, P. R. China
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6
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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7
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Sun X, Liu Y, Shi J, Si C, Du J, Liu X, Jiang C, Yang S. Controllable Synthesis of 2H-1T' Mo x Re (1- x ) S 2 Lateral Heterostructures and Their Tunable Optoelectronic Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304171. [PMID: 37278555 DOI: 10.1002/adma.202304171] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Revised: 05/24/2023] [Indexed: 06/07/2023]
Abstract
Constructing heterostructures and doping are valid ways to improve the optoelectronic properties of transition metal dichalcogenides (TMDs) and optimize the performance of TMDs-based photodetectors. Compared with transfer techniques, chemical vapor deposition (CVD) has higher efficiency in preparing heterostructures. As for the one-step CVD growth of heterostructures, cross-contamination between the two materials may occur during the growth process, which may provide the possibility of one-step simultaneous realization of controllable doping and formation of alloy-based heterostructures by finely tuning the growth dynamics. Here, 2H-1T' Mox Re(1- x ) S2 alloy-to-alloy lateral heterostructures are synthesized through this one-step CVD growth method, utilizing the cross-contamination and different growth temperatures of the two alloys. Due to the doping of a small amount of Re atoms in 2H MoS2 , 2H Mox Re(1- x ) S2 has a high response rejection ratio in the solar-blind ultraviolet (SBUV) region and exhibits a positive photoconductive (PPC) effect. While the 1T' Mox Re(1- x ) S2 formed by heavily doping Mo atoms into 1T' ReS2 will produce a negative photoconductivity (NPC) effect under UV laser irradiation. The optoelectronic property of 2H-1T' Mox Re(1- x ) S2 -based heterostructures can be modulated by gate voltage. These findings are expected to expand the functionality of traditional optoelectronic devices and have potential applications in optoelectronic logic devices.
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Affiliation(s)
- Xiaona Sun
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Yang Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chen Si
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jiantao Du
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
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8
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Zhou J, Cui J, Du S, Zhao Z, Guo J, Li S, Zhang W, Liu N, Li X, Bai Q, Guo Y, Mi S, Cheng Z, He L, Nie JC, Yang Y, Dou R. A natural indirect-to-direct band gap transition in artificially fabricated MoS 2 and MoSe 2 flowers. NANOSCALE 2023; 15:7792-7802. [PMID: 37021968 DOI: 10.1039/d3nr00477e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS2 and MoSe2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS2 (MoSe2) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS2 (MoSe2) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.
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Affiliation(s)
- Jun Zhou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Juan Cui
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Jianfeng Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Songyang Li
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Xiaotian Li
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuo Mi
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Lin He
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - J C Nie
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Yu Yang
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Ruifen Dou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
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9
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Cohen A, Mohapatra PK, Hettler S, Patsha A, Narayanachari KVLV, Shekhter P, Cavin J, Rondinelli JM, Bedzyk M, Dieguez O, Arenal R, Ismach A. Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS 2 on Sapphire. ACS NANO 2023; 17:5399-5411. [PMID: 36883970 PMCID: PMC10062024 DOI: 10.1021/acsnano.2c09754] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 03/01/2023] [Indexed: 06/18/2023]
Abstract
Conventional epitaxy plays a crucial role in current state-of-the art semiconductor technology, as it provides a path for accurate control at the atomic scale of thin films and nanostructures, to be used as the building blocks in nanoelectronics, optoelectronics, sensors, etc. Four decades ago, the terms "van der Waals" (vdW) and "quasi-vdW (Q-vdW) epitaxy" were coined to explain the oriented growth of vdW layers on 2D and 3D substrates, respectively. The major difference with conventional epitaxy is the weaker interaction between the epi-layer and the epi-substrates. Indeed, research on Q-vdW epitaxial growth of transition metal dichalcogenides (TMDCs) has been intense, with oriented growth of atomically thin semiconductors on sapphire being one of the most studied systems. Nonetheless, there are some striking and not yet understood differences in the literature regarding the orientation registry between the epi-layers and epi-substrate and the interface chemistry. Here we study the growth of WS2 via a sequential exposure of the metal and the chalcogen precursors in a metal-organic chemical vapor deposition (MOCVD) system, introducing a metal-seeding step prior to the growth. The ability to control the delivery of the precursor made it possible to study the formation of a continuous and apparently ordered WO3 mono- or few-layer at the surface of a c-plane sapphire. Such an interfacial layer is shown to strongly influence the subsequent quasi-vdW epitaxial growth of the atomically thin semiconductor layers on sapphire. Hence, here we elucidate an epitaxial growth mechanism and demonstrate the robustness of the metal-seeding approach for the oriented formation of other TMDC layers. This work may enable the rational design of vdW and quasi-vdW epitaxial growth on different material systems.
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Affiliation(s)
- Assael Cohen
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - Pranab K. Mohapatra
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - Simon Hettler
- Laboratorio
de Microscopías Avanzadas (LMA), Universidad de Zaragoza, 50018 Zaragoza, Spain
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC−Universidad de Zaragoza, 50009 Zaragoza, Spain
| | - Avinash Patsha
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - K. V. L. V. Narayanachari
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Pini Shekhter
- Center
for Nanoscience and Nanotechnology, Tel
Aviv University, Tel Aviv 6997801, Israel
| | - John Cavin
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - James M. Rondinelli
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Michael Bedzyk
- Department of Materials Science and Engineering and Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Oswaldo Dieguez
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
| | - Raul Arenal
- Laboratorio
de Microscopías Avanzadas (LMA), Universidad de Zaragoza, 50018 Zaragoza, Spain
- Instituto
de Nanociencia y Materiales de Aragón (INMA), CSIC−Universidad de Zaragoza, 50009 Zaragoza, Spain
- ARAID
Foundation, 50018 Zaragoza, Spain
| | - Ariel Ismach
- Department
of Materials Science and Engineering, Tel
Aviv University, Ramat
Aviv, Tel Aviv 6997801, Israel
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10
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Zheng P, Wei W, Liang Z, Qin B, Tian J, Wang J, Qiao R, Ren Y, Chen J, Huang C, Zhou X, Zhang G, Tang Z, Yu D, Ding F, Liu K, Xu X. Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nat Commun 2023; 14:592. [PMID: 36737606 PMCID: PMC9898269 DOI: 10.1038/s41467-023-36286-6] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 01/23/2023] [Indexed: 02/05/2023] Open
Abstract
The great challenge for the growth of non-centrosymmetric 2D single crystals is to break the equivalence of antiparallel grains. Even though this pursuit has been partially achieved in boron nitride and transition metal dichalcogenides (TMDs) growth, the key factors that determine the epitaxy of non-centrosymmetric 2D single crystals are still unclear. Here we report a universal methodology for the epitaxy of non-centrosymmetric 2D metal dichalcogenides enabled by accurate time sequence control of the simultaneous formation of grain nuclei and substrate steps. With this methodology, we have demonstrated the epitaxy of unidirectionally aligned MoS2 grains on a, c, m, n, r and v plane Al2O3 as well as MgO and TiO2 substrates. This approach is also applicable to many TMDs, such as WS2, NbS2, MoSe2, WSe2 and NbSe2. This study reveals a robust mechanism for the growth of various 2D single crystals and thus paves the way for their potential applications.
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Affiliation(s)
- Peiming Zheng
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Wenya Wei
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Zhihua Liang
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Biao Qin
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Jinpeng Tian
- grid.9227.e0000000119573309Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
| | - Jinhuan Wang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Ruixi Qiao
- grid.11135.370000 0001 2256 9319International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871 China
| | - Yunlong Ren
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Junting Chen
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Chen Huang
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China
| | - Xu Zhou
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Guangyu Zhang
- grid.9227.e0000000119573309Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China ,grid.511002.7Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808 China
| | - Zhilie Tang
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
| | - Dapeng Yu
- grid.263817.90000 0004 1773 1790Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055 China
| | - Feng Ding
- grid.9227.e0000000119573309Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055 China
| | - Kaihui Liu
- grid.11135.370000 0001 2256 9319State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871 China ,grid.11135.370000 0001 2256 9319International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871 China ,grid.511002.7Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808 China
| | - Xiaozhi Xu
- grid.263785.d0000 0004 0368 7397Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China ,grid.263785.d0000 0004 0368 7397Guangdong-Hong Kong Joint Laboratory of Quantum Matter, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510631 China
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11
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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12
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Park Y, Ahn C, Ahn JG, Kim JH, Jung J, Oh J, Ryu S, Kim S, Kim SC, Kim T, Lim H. Critical Role of Surface Termination of Sapphire Substrates in Crystallographic Epitaxial Growth of MoS 2 Using Inorganic Molecular Precursors. ACS NANO 2023; 17:1196-1205. [PMID: 36633192 DOI: 10.1021/acsnano.2c08983] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A highly reproducible route for the epitaxial growth of single-crystalline monolayer MoS2 on a C-plane sapphire substrate was developed using vapor-pressure-controllable inorganic molecular precursors MoOCl4 and H2S. Microscopic, crystallographic, and spectroscopic analyses indicated that the epitaxial MoS2 film possessed outstanding electrical and optical properties, excellent homogeneity, and orientation selectivity. The systematic investigation of the effect of growth temperature on the crystallographic orientations of MoS2 revealed that the surface termination of the sapphire substrate with respect to the growth temperature determines the crystallographic orientation selectivity of MoS2. Our results suggest that controlling the surface to form a half-Al-terminated surface is a prerequisite for the epitaxial growth of MoS2 on a C-plane sapphire substrate. The insights on the growth mechanism, especially the significance of substrate surface termination, obtained through this study will aid in designing efficient epitaxial growth routes for developing single-crystalline monolayer transition metal dichalcogenides.
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Affiliation(s)
- Younghee Park
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju61005, Republic of Korea
| | - Chaehyeon Ahn
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju61005, Republic of Korea
| | - Jong-Guk Ahn
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju61005, Republic of Korea
| | - Jee Hyeon Kim
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju61005, Republic of Korea
| | - Jaehoon Jung
- Department of Chemistry, University of Ulsan, Ulsan44776, Republic of Korea
| | - Juseung Oh
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Sunmin Ryu
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang37673, Republic of Korea
| | - Soyoung Kim
- Analysis and Assessment Group, Research Institute of Industrial Science and Technology, Pohang37673, Republic of Korea
| | - Seung Cheol Kim
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju61005, Republic of Korea
| | - Taewoong Kim
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju61005, Republic of Korea
| | - Hyunseob Lim
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), Gwangju61005, Republic of Korea
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13
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You J, Pan J, Shang SL, Xu X, Liu Z, Li J, Liu H, Kang T, Xu M, Li S, Kong D, Wang W, Gao Z, Zhou X, Zhai T, Liu ZK, Kim JK, Luo Z. Salt-Assisted Selective Growth of H-phase Monolayer VSe 2 with Apparent Hole Transport Behavior. NANO LETTERS 2022; 22:10167-10175. [PMID: 36475688 DOI: 10.1021/acs.nanolett.2c04133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.
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Affiliation(s)
- Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jie Pan
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Xiang Xu
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Jingwei Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Mengyang Xu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Shaobo Li
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Deqi Kong
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wenliang Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Zhaoli Gao
- Department of Biomedical Engineering, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong999777, P. R. China
- CUHK Shenzhen Research Institute, No.10, second, Yuexing Road, Nanshan, Shenzhen518057, P. R. China
| | - Xing Zhou
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Tianyou Zhai
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States
| | - Jang-Kyo Kim
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China
- The Hong Kong University of Science and Technology Shenzhen Research Institute, No. 9 Yuexing first RD, South Area Hi-tech Park, Nanshan, Shenzhen518057, China
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14
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Zheng B, Fu J, Zhu Y, Liang J, She Y, Xiang J, Ma X, Zhang Y, Wang S, Hu G, Zhou Y, Feng Y, Fu Z, Pan N, Lu Y, Zeng H, Gu M, Liu K, Xiang B. Synthesis of stable γ-phase MnS 1-xSe x nanoflakes with inversion symmetry breaking. NANOSCALE 2022; 14:17036-17043. [PMID: 36367106 DOI: 10.1039/d2nr05136b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Inversion symmetry breaking plays a critical role in the formation of magnetic skyrmions. Therefore, for the application of skyrmion-based devices, it is important to develop novel engineering techniques and explore new non-centrosymmetric lattices. In this paper, we report the rational synthesis of stable γ-phase MnS1-xSex (0 ≤ x ≤ 0.45) nanoflakes with an asymmetric distribution of the elemental content, which persists on inversion symmetry breaking. The temperature dependence of resonant second-harmonic generation characterization reveals that a non-centrosymmetric crystal structure exists in our as-grown γ-phase MnS1-xSex with spatial-inversion symmetry breaking. By tuning the parameters of nucleation temperature and growth time, we produced a detailed growth phase diagram, revealing a controllable as-grown structure evolution from γ-phase wurtzite-type to α-phase rock-salt type structure of MnS1-xSex nanoflakes. Our work provides a new playground to explore novel materials that have broken inversion symmetry.
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Affiliation(s)
- Bo Zheng
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Yuanmin Zhu
- School of Materials Science and Engineering, Dongguan University of Technology, Dongguan, 523808, China
- Department of Materials Science and Engineering, Southern University of Science and Technology China, Shenzhen, China
| | - Jing Liang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Yongzhi She
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Junxiang Xiang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Xiang Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Ying Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Shasha Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Guojing Hu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Yuehui Zhou
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Yan Feng
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Zhengping Fu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Nan Pan
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yalin Lu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Meng Gu
- Department of Materials Science and Engineering, Southern University of Science and Technology China, Shenzhen, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Bin Xiang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, China.
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15
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Ren H, Xiang G. Recent Progress in Research on Ferromagnetic Rhenium Disulfide. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3451. [PMID: 36234579 PMCID: PMC9565357 DOI: 10.3390/nano12193451] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 09/26/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Since long-range magnetic ordering was observed in pristine Cr2Ge2Te6 and monolayer CrCl3, two-dimensional (2D) magnetic materials have gradually become an emerging field of interest. However, it is challenging to induce and modulate magnetism in non-magnetic (NM) materials such as rhenium disulfide (ReS2). Theoretical research shows that defects, doping, strain, particular phase, and domain engineering may facilitate the creation of magnetic ordering in the ReS2 system. These predictions have, to a large extent, stimulated experimental efforts in the field. Herein, we summarize the recent progress on ferromagnetism (FM) in ReS2. We compare the proposed methods to introduce and modulate magnetism in ReS2, some of which have made great experimental breakthroughs. Experimentally, only a few ReS2 materials exhibit room-temperature long-range ferromagnetic order. In addition, the superexchange interaction may cause weak ferromagnetic coupling between neighboring trimers. We also present a few potential research directions for the future, and we finally conclude that a deep and thorough understanding of the origin of FM with and without strain is very important for the development of basic research and practical applications.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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16
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Dong R, Gong X, Yang J, Sun Y, Ma L, Wang J. The Intrinsic Thermodynamic Difficulty and a Step-Guided Mechanism for the Epitaxial Growth of Uniform Multilayer MoS 2 with Controllable Thickness. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201402. [PMID: 35288996 DOI: 10.1002/adma.202201402] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 03/05/2022] [Indexed: 06/14/2023]
Abstract
Multilayer MoS2 shows superior performance over the monolayer MoS2 for electronic devices while the growth of multilayer MoS2 with controllable and uniform thickness is still very challenging. It is revealed by calculations that monolayer MoS2 domains are thermodynamically much more favorable than multilayer ones on epitaxial substrates due to the competition between surface interactions and edge formation, leading accordingly to a layer-by-layer growth pattern and non-continuously distributed multilayer domains with uncontrollable thickness uniformity. The thermodynamics model also suggests that multilayer MoS2 domains with aligned edges can significantly reduce their free energy and represent a local minimum with very prominent energy advantage on a potential energy surface. However, the nucleation probability of multilayer MoS2 domains with aligned edges is, if not impossible, extremely rare on flat substrates. Herein, a step-guided mechanism for the growth of uniform multilayer MoS2 on an epitaxial substrate is theoretically proposed. The steps with proper height on sapphire surface are able to guide the simultaneous nucleation of multilayer MoS2 with aligned edges and uniform thickness, and promote the continuous growth of multilayer MoS2 films. The proposed mechanism can be reasonably extended to grow multilayer 2D materials with uniform thickness on epitaxial substrates.
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Affiliation(s)
- Ruikang Dong
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Xiaoshu Gong
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Jiafu Yang
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Yueming Sun
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Liang Ma
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Jinlan Wang
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
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17
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Paul S, Torsi R, Robinson JA, Momeni K. Effect of the Substrate on MoS 2 Monolayer Morphology: An Integrated Computational and Experimental Study. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18835-18844. [PMID: 35421302 DOI: 10.1021/acsami.2c03471] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Synthesis of two-dimensional materials, specifically transition metal dichalcogenides (TMDs), with controlled lattice orientations is a major barrier to their industrial applications. Controlling the orientation of as-grown TMDs is critical for preventing the formation of grain boundaries, thus reaching their maximum mechanical and optoelectronic performance. Here, we investigated the role of the substrate's crystallinity in the growth orientation of 2D materials using reactive molecular dynamics (MD) simulations and verified with experimental growth using the chemical vapor deposition (CVD) technique. We considered MoS2 as our model material and investigated its growth on crystalline and amorphous silica and sapphire substrates. We revealed the role of the substrate's energy landscape on the orientation of as-grown TMDs, where the presence of monolayer-substrate energy barriers perpendicular to the streamlines hinder the detachment of precursor nuclei from the substrate. We show that MoS2 monolayers with controlled orientations could not be grown on the SiO2 substrate and revealed that amorphization of the substrate changes the intensity and equilibrium distance of monolayer-substrate interactions. Our simulations indicate that 0° rotated MoS2 is the most favorable configuration on a sapphire substrate, consistent with our experimental results. The experimentally validated computational results and insight presented in this study pave the way for the high-quality synthesis of TMDs for high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Shiddartha Paul
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35401, United States
| | - Riccardo Torsi
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kasra Momeni
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35401, United States
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18
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Chuang MH, Chen CA, Liu PY, Zhang XQ, Yeh NY, Shih HJ, Lee YH. Scalable Moiré Lattice with Oriented TMD Monolayers. NANOSCALE RESEARCH LETTERS 2022; 17:34. [PMID: 35286495 PMCID: PMC8921411 DOI: 10.1186/s11671-022-03670-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Accepted: 01/30/2022] [Indexed: 06/14/2023]
Abstract
Moiré lattice in artificially stacked monolayers of two-dimensional (2D) materials effectively modulates the electronic structures of materials, which is widely highlighted. Formation of the electronic Moiré superlattice promises the prospect of uniformity among different moiré cells across the lattice, enabling a new platform for novel properties, such as unconventional superconductivity, and scalable quantum emitters. Recently, epitaxial growth of the monolayer transition metal dichalcogenide (TMD) is achieved on the sapphire substrate by chemical vapor deposition (CVD) to realize scalable growth of highly-oriented monolayers. However, fabrication of the scalable Moiré lattice remains challenging due to the lack of essential manipulation of the well-aligned monolayers for clean interface quality and precise twisting angle control. Here, scalable and highly-oriented monolayers of TMD are realized on the sapphire substrates by using the customized CVD process. Controlled growth of the epitaxial monolayers is achieved by promoting the rotation of the nuclei-like domains in the initial growth stage, enabling aligned domains for further grain growth in the steady-state stage. A full coverage and distribution of the highly-oriented domains are verified by second-harmonic generation (SHG) microscopy. By developing the method for clean monolayer manipulation, hetero-stacked bilayer (epi-WS2/epi-MoS2) is fabricated with the specific angular alignment of the two major oriented monolayers at the edge direction of 0°/ ± 60°. On account of the optimization for scalable Moiré lattice with a high-quality interface, the observation of interlayer exciton at low temperature illustrates the feasibility of scalable Moiré superlattice based on the oriented monolayers.
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Affiliation(s)
- Meng-Hsi Chuang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Chun-An Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Po-Yen Liu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Xin-Quan Zhang
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Nai-Yu Yeh
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Hao-Jen Shih
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Yi-Hsien Lee
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan.
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu, 30013, Taiwan.
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19
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Zhang Z, Yang X, Liu K, Wang R. Epitaxy of 2D Materials toward Single Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105201. [PMID: 35038381 PMCID: PMC8922126 DOI: 10.1002/advs.202105201] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 12/12/2021] [Indexed: 05/05/2023]
Abstract
Two-dimensional (2D) materials exhibit unique electronic, optical, magnetic, mechanical, and thermal properties due to their special crystal structure and thus have promising potential in many fields, such as in electronics and optoelectronics. To realize their real applications, especially in integrated devices, the growth of large-size single crystal is a prerequisite. Up to now, the most feasible way to achieve 2D single crystal growth is the epitaxy: growth of 2D materials of one or more specific orientations with single-crystal substrate. Only when the 2D domains have the same orientation, they can stitch together seamlessly and single-crystal 2D films can be obtained. In this view, four different epitaxy modes of 2D materials on various substrates are presented, including van der Waals epitaxy, edge epitaxy, step-guided epitaxy, and in-plane epitaxy focusing on the growth of graphene, hexagonal boron nitride (h-BN), and transition metal dichalcogenide (TMDC). The lattice symmetry relation and the interaction between 2D materials and the substrate are the key factors determining the epitaxy behaviors and thus are systematically discussed. Finally, the opportunities and challenges about the epitaxy of 2D single crystals in the future are summarized.
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Affiliation(s)
- Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Xiaonan Yang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐optoelectronicsSchool of PhysicsPeking UniversityBeijing100871China
- Interdisciplinary Institute of Light‐Element Quantum Materials and Research Centre for Light‐Element Advanced MaterialsPeking UniversityBeijing100871China
| | - Rongming Wang
- Beijing Advanced Innovation Center for Materials Genome EngineeringBeijing Key Laboratory for Magneto‐Photoelectrical Composite and Interface ScienceInstitute for Multidisciplinary InnovationSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China
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20
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Singh M, Ghosh R, Chen YS, Yen ZL, Hofmann M, Chen YF, Hsieh YP. Chemical vapor deposition merges MoS 2 grains into high-quality and centimeter-scale films on Si/SiO 2. RSC Adv 2022; 12:5990-5996. [PMID: 35424587 PMCID: PMC8982092 DOI: 10.1039/d1ra06933k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Accepted: 12/07/2021] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional molybdenum disulfide (MoS2) has attracted increasing attention due to its promise for next-generation electronics. To realize MoS2-based electronics, however, a synthesis method is required that produces a uniform single-layer material and that is compatible with existing semiconductor fabrication techniques. Here, we demonstrate that uniform films of single-layer MoS2 can be directly produced on Si/SiO2 at wafer-scale without the use of catalysts or promoters. Control of the precursor transport through oxygen dosing yielded complete coverage and increased connectivity between crystalline MoS2 domains. Spectroscopic characterization and carrier transport measurements furthermore revealed a reduced density of defects compared to conventional chemical vapor deposition growth that increased the quantum yield over ten-fold. To demonstrate the impact of enhanced scale and optoelectronic performance, centimeter-scale arrays of MoS2 photosensors were produced that demonstrate unprecedentedly high and uniform responsivity. Our approach improves the prospect of MoS2 for future applications.
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Affiliation(s)
- Mukesh Singh
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Rapti Ghosh
- Department of Physics, National Central University Chung Li 320 Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan
- Molecular Science and Technology, Taiwan International Graduate Program, Academia Sinica Taipei 115 Taiwan
| | - Yu-Siang Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan
| | - Zhi-Long Yen
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Mario Hofmann
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University Taipei 106 Taiwan
| | - Ya-Ping Hsieh
- Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 115 Taiwan
- Molecular Science and Technology, Taiwan International Graduate Program, Academia Sinica Taipei 115 Taiwan
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21
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Zhou G, Gao H, Li J, He X, He Y, Li Y, Hao G. Water-assisted controllable growth of atomically thin WTe 2nanoflakes by chemical vapor deposition based on precursor design and substrate engineering strategies. NANOTECHNOLOGY 2022; 33:175602. [PMID: 35008075 DOI: 10.1088/1361-6528/ac49c4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
WTe2nanostructures have intrigued much attention due to their unique properties, such as large non-saturating magnetoresistance, quantum spin Hall effect and topological surface state. However, the controllable growth of large-area atomically thin WTe2nanostructures remains a significant challenge. In the present work, we demonstrate the controllable synthesis of 1T' atomically thin WTe2nanoflakes (NFs) by water-assisted ambient pressure chemical vapor deposition method based on precursor design and substrate engineering strategies. The introduction of water during the growth process can generate a new synthesized route by reacting with WO3to form intermediate volatile metal oxyhydroxide. Using WO3foil as the growth precursor can drastically enhance the uniformity of as-prepared large-area 1T' WTe2NFs compared to WO3powders. Moreover, highly oriented WTe2NFs with distinct orientations can be obtained by using a-plane and c-plane sapphire substrates, respectively. Corresponding precursor design and substrate engineering strategies are expected to be applicable to other low dimensional transition metal dichalcogenides, which are crucial for the design of novel electronic and optoelectronic devices.
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Affiliation(s)
- Guoliang Zhou
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Hui Gao
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Jin Li
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Xiaoyue He
- Materials Growth and Characterization Center, Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Yanbing He
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Yan Li
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Guolin Hao
- School of Physics and Optoelectronics and and Hunan Key Laboratory for Micro-Nano Energy Materials and Device, Xiangtan University, Xiangtan 411105, People's Republic of China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, People's Republic of China
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22
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Seravalli L, Bosi M. A Review on Chemical Vapour Deposition of Two-Dimensional MoS 2 Flakes. MATERIALS (BASEL, SWITZERLAND) 2021; 14:7590. [PMID: 34947186 PMCID: PMC8704647 DOI: 10.3390/ma14247590] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 12/02/2021] [Accepted: 12/07/2021] [Indexed: 12/13/2022]
Abstract
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.
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Affiliation(s)
- Luca Seravalli
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
| | - Matteo Bosi
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
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23
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Wang Z, Cheon CY, Tripathi M, Marega GM, Zhao Y, Ji HG, Macha M, Radenovic A, Kis A. Superconducting 2D NbS 2 Grown Epitaxially by Chemical Vapor Deposition. ACS NANO 2021; 15:18403-18410. [PMID: 34756018 PMCID: PMC8614232 DOI: 10.1021/acsnano.1c07956] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Accepted: 11/03/2021] [Indexed: 06/13/2023]
Abstract
Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attracting great attention because of their interesting low-temperature properties such as superconductivity, magnetism, and charge density waves (CDW). However, further studies and practical applications are being slowed down by difficulties in synthesizing high-quality materials with a large grain size and well-determined thickness. In this work, we demonstrate epitaxial chemical vapor deposition (CVD) growth of 2D NbS2 crystals on a sapphire substrate, with a thickness-dependent structural phase transition. NbS2 crystals are epitaxially aligned by the underlying c-plane sapphire resulting in high-quality growth. The thickness of NbS2 is well controlled by growth parameters to be between 1.5 and 10 nm with a large grain size of up to 500 μm. As the thickness increases, we observe in our NbS2 a transition from a metallic 3R-polytype to a superconducting 2H-polytype, confirmed by Raman spectroscopy, aberration-corrected scanning transmission electron microscopy (STEM) and electrical transport measurements. A Berezinskii-Kosterlitz-Thouless (BKT) superconducting transition occurs in the CVD-grown 2H-phase NbS2 below the transition temperature (Tc) of 3 K. Our work demonstrates thickness and phase-controllable synthesis of high-quality superconducting 2D NbS2, which is imperative for its practical applications in next-generation TMDC-based electrical devices.
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Affiliation(s)
- Zhenyu Wang
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Cheol-Yeon Cheon
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mukesh Tripathi
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Guilherme Migliato Marega
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Yanfei Zhao
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Hyun Goo Ji
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Michal Macha
- Institute
of Bioengineering, École Polytechnique
Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Aleksandra Radenovic
- Institute
of Bioengineering, École Polytechnique
Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Andras Kis
- Institute
of Electrical and Microengineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute
of Materials Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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24
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Bian R, Li C, Liu Q, Cao G, Fu Q, Meng P, Zhou J, Liu F, Liu Z. Recent progress in the synthesis of novel two-dimensional van der Waals materials. Natl Sci Rev 2021; 9:nwab164. [PMID: 35591919 PMCID: PMC9113016 DOI: 10.1093/nsr/nwab164] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2021] [Revised: 07/21/2021] [Accepted: 08/15/2021] [Indexed: 11/15/2022] Open
Abstract
Abstract
The last decade has witnessed the significant progress of physical fundamental research and great success of practical application in two-dimensional (2D) van der Waals (vdW) materials since the discovery of graphene in 2004. To date, vdW materials is still a vibrant and fast-expanding field, where tremendous reports have been published covering topics from cutting-edge quantum technology to urgent green energy, and so on. Here, we briefly review the emerging hot physical topics and intriguing materials, such as 2D topological materials, piezoelectric materials, ferroelectric materials, magnetic materials and twistronic heterostructures. Then, various vdW material synthetic strategies are discussed in detail, concerning the growth mechanisms, preparation conditions and typical examples. Finally, prospects and further opportunities in the booming field of 2D materials are addressed.
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Affiliation(s)
| | | | | | - Guiming Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- CNRS-International-NTU-Thales Research Alliance (CINTRA), Singapore 637553, Singapore
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
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25
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Li J, Wang S, Jiang Q, Qian H, Hu S, Kang H, Chen C, Zhan X, Yu A, Zhao S, Zhang Y, Chen Z, Sui Y, Qiao S, Yu G, Peng S, Jin Z, Liu X. Single-Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100743. [PMID: 34145739 DOI: 10.1002/smll.202100743] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 03/11/2021] [Indexed: 06/12/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2 ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qi Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoji Qian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shike Hu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - He Kang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyi Zhan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Aobo Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shan Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Songang Peng
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Zhi Jin
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xinyu Liu
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
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26
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Wang Q, Shi R, Zhao Y, Huang R, Wang Z, Amini A, Cheng C. Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides. NANOSCALE ADVANCES 2021; 3:3430-3440. [PMID: 36133721 PMCID: PMC9417528 DOI: 10.1039/d1na00171j] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2021] [Accepted: 05/04/2021] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMD films with high uniformity, large domain size, good single-crystallinity, etc., at wafer-scale for commercial uses. However, the CVD-grown TMD samples often suffer from poor quality due to the improper control of reaction kinetics and lack of understanding about the phenomenon. In this review, we focus on several key challenges in the controllable CVD fabrication of high-quality wafer-scale TMD films and highlight the importance of the control of precursor concentration, nucleation density, and oriented growth. The remaining difficulties in the field and prospective directions of the related topics are further summarized.
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Affiliation(s)
- Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology Hong Kong People's Republic of China
| | - Yaxuan Zhao
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Runqing Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Zixu Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University Kingswood NSW 2751 Australia
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
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Pan S, Yang P, Zhu L, Hong M, Xie C, Zhou F, Shi Y, Huan Y, Cui F, Zhang Y. Effect of substrate symmetry on the orientations of MoS 2 monolayers. NANOTECHNOLOGY 2021; 32:095601. [PMID: 33113522 DOI: 10.1088/1361-6528/abc566] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are promising platforms for developing next-generation electronic and optoelectronic devices due to their unique properties. To achieve this, the growth of large single-crystal TMDs is a critical issue. Unraveling the factors affecting the nucleation and domain orientation should hold fundamental significance. Herein, we design the chemical vapor deposition growth of monolayer MoS2 triangles on Au(111) and Au(100) facets, for exploring the substrate facet effects on the domain orientations. According to multi-scale characterizations, we find that, the obtained triangular MoS2 domains present two preferential orientations on the six-fold symmetric Au(111) facet, whereas four predominant orientations on the four-fold symmetric Au(100) facet. Using on-site scanning tunneling microscopy, we further reveal the preferred alignments of monolayer MoS2 triangles along the close-packed directions of both Au(111) and Au(100) facets. Moreover, bunched substrate steps are also found to form along the close-packed directions of the crystal facets, which guides the preferential nucleation of monolayer MoS2 along the step edges. This work should hereby deepen the understanding of the substrate facet/step effect on the nucleation and orientation of monolayer MoS2 domains, thus providing fundamental insights into the controllable syntheses of large single-crystal TMD monolayers.
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Affiliation(s)
- Shuangyuan Pan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Lijie Zhu
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Yuping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fangfang Cui
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
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28
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Chowdhury T, Sadler EC, Kempa TJ. Progress and Prospects in Transition-Metal Dichalcogenide Research Beyond 2D. Chem Rev 2020; 120:12563-12591. [DOI: 10.1021/acs.chemrev.0c00505] [Citation(s) in RCA: 74] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Affiliation(s)
- Tomojit Chowdhury
- Department of Chemistry, Johns Hopkins University, Baltimore 21218, United States
| | - Erick C. Sadler
- Department of Chemistry, Johns Hopkins University, Baltimore 21218, United States
| | - Thomas J. Kempa
- Department of Chemistry, Johns Hopkins University, Baltimore 21218, United States
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore 21218, United States
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29
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Hu X, Xu E, Xiang S, Chen Z, Zhou X, Wang N, Guo H, Ruan L, Hu Y, Li C, Liang D, Jiang Y, Li G. Synthesis of NbSe 2 single-crystalline nanosheet arrays for UV photodetectors. CrystEngComm 2020. [DOI: 10.1039/d0ce01140a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Single-crystalline NbSe2 nanosheet arrays were synthesized via a CVD method. The NbSe2 nanosheet arrays based photodetectors show very high responsivity and external quantum efficiency to UV light.
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