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Chen J, Sun MY, Wang ZH, Zhang Z, Zhang K, Wang S, Zhang Y, Wu X, Ren TL, Liu H, Han L. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS 2024; 16:264. [PMID: 39120835 PMCID: PMC11315877 DOI: 10.1007/s40820-024-01461-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/13/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- BNRist, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zhen-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China.
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan, 250100, People's Republic of China.
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Cheng Z, Jia X, Han B, Li M, Xu W, Li Y, Gao P, Dai L. P/N-Type Conversion of 2D MoTe 2 Controlled by Top Gate Engineering for Logic Circuits. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36539-36546. [PMID: 38973165 DOI: 10.1021/acsami.4c03090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.
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Affiliation(s)
- Zhixuan Cheng
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Xionghui Jia
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Bo Han
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Minglai Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Wanjin Xu
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Yanping Li
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Gao
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lun Dai
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Beijing 100871, China
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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Wong H, Zhang J, Liu J. Contacts at the Nanoscale and for Nanomaterials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:386. [PMID: 38392759 PMCID: PMC10893407 DOI: 10.3390/nano14040386] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Revised: 02/06/2024] [Accepted: 02/16/2024] [Indexed: 02/24/2024]
Abstract
Contact scaling is a major challenge in nano complementary metal-oxide-semiconductor (CMOS) technology, as the surface roughness, contact size, film thicknesses, and undoped substrate become more problematic as the technology shrinks to the nanometer range. These factors increase the contact resistance and the nonlinearity of the current-voltage characteristics, which could limit the benefits of the further downsizing of CMOS devices. This review discusses issues related to the contact size reduction of nano CMOS technology and the validity of the Schottky junction model at the nanoscale. The difficulties, such as the limited doping level and choices of metal for band alignment, Fermi-level pinning, and van der Waals gap, in achieving transparent ohmic contacts with emerging two-dimensional materials are also examined. Finally, various methods for improving ohmic contacts' characteristics, such as two-dimensional/metal van der Waals contacts and hybrid contacts, junction doping technology, phase and bandgap modification effects, buffer layers, are highlighted.
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Affiliation(s)
- Hei Wong
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, China
| | - Jieqiong Zhang
- Hubei Jiu Feng Shan Laboratory, Wuhan 430074, China; (J.Z.); (J.L.)
| | - Jun Liu
- Hubei Jiu Feng Shan Laboratory, Wuhan 430074, China; (J.Z.); (J.L.)
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5
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Kang T, Lu Z, Liu L, Huang M, Hu Y, Liu H, Wu R, Liu Z, You J, Chen Y, Zhang K, Duan X, Wang N, Liu Y, Luo Z. In Situ Defect Engineering of Controllable Carrier Types in WSe 2 for Homomaterial Inverters and Self-Powered Photodetectors. NANO LETTERS 2023. [PMID: 38038404 DOI: 10.1021/acs.nanolett.3c03328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.
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Affiliation(s)
- Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yunxia Hu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, People's Republic of China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, No. 9 Yuexing first RD, Hi-Tech Park, Nanshan, Shenzhen 518057, People's Republic of China
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Tang L, Zou J. p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. NANO-MICRO LETTERS 2023; 15:230. [PMID: 37848621 PMCID: PMC10582003 DOI: 10.1007/s40820-023-01211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 09/04/2023] [Indexed: 10/19/2023]
Abstract
Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.
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Affiliation(s)
- Lei Tang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, People's Republic of China.
| | - Jingyun Zou
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu, People's Republic of China.
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7
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Kim H, Uddin I, Watanabe K, Taniguchi T, Whang D, Kim GH. Conversion of Charge Carrier Polarity in MoTe 2 Field Effect Transistor via Laser Doping. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101700. [PMID: 37242116 DOI: 10.3390/nano13101700] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 05/04/2023] [Accepted: 05/19/2023] [Indexed: 05/28/2023]
Abstract
A two-dimensional (2D) atomic crystalline transition metal dichalcogenides has shown immense features, aiming for future nanoelectronic devices comparable to conventional silicon (Si). 2D molybdenum ditelluride (MoTe2) has a small bandgap, appears close to that of Si, and is more favorable than other typical 2D semiconductors. In this study, we demonstrate laser-induced p-type doping in a selective region of n-type semiconducting MoTe2 field effect transistors (FET) with an advance in using the hexagonal boron nitride as passivation layer from protecting the structure phase change from laser doping. A single nanoflake MoTe2-based FET, exhibiting initial n-type and converting to p-type in clear four-step doping, changing charge transport behavior in a selective surface region by laser doping. The device shows high electron mobility of about 23.4 cm2V-1s-1 in an intrinsic n-type channel and hole mobility of about 0.61 cm2V-1s-1 with a high on/off ratio. The device was measured in the range of temperature 77-300 K to observe the consistency of the MoTe2-based FET in intrinsic and laser-dopped region. In addition, we measured the device as a complementary metal-oxide-semiconductor (CMOS) inverter by switching the charge-carrier polarity of the MoTe2 FET. This fabrication process of selective laser doping can potentially be used for larger-scale MoTe2 CMOS circuit applications.
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Affiliation(s)
- Hanul Kim
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Inayat Uddin
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Material Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Dongmok Whang
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Gil-Ho Kim
- Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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8
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Dan Z, Yang B, Song Q, Chen J, Li H, Gao W, Huang L, Zhang M, Yang M, Zheng Z, Huo N, Han L, Li J. Type-II Bi 2O 2Se/MoTe 2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18101-18113. [PMID: 36989425 DOI: 10.1021/acsami.3c01807] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi2O2Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi2O2Se/2H-MoTe2 van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W-1, and a high specific detectivity (D*) of 3.73 × 1011 Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W-1, 3.84 × 1012 Jones, 0.52, and 7.21% at Vg = -60 V through a large band offset originated from the n+-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.
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Affiliation(s)
- Zhiying Dan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen 9747AG, The Netherlands
| | - Baoxiang Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Qiqi Song
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Jianru Chen
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Hengyi Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Menglong Zhang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Lixiang Han
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
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9
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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10
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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11
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Lin CY, Lee MP, Chang YM, Tseng YT, Yang FS, Li M, Chen JY, Chen CF, Tsai MY, Lin YC, Ueno K, Yamamoto M, Lo ST, Lien CH, Chiu PW, Tsukagoshi K, Wu WW, Lin YF. Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:41156-41164. [PMID: 36037311 DOI: 10.1021/acsami.2c07679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors. The electron beam energy projected into the region outside the electrode diffuses into the main channel, producing selective-area n-type doping in a layered MoTe2 (or MoS2) field-effect transistor. As a result, the Schottky barrier height at the interface between the electrode and the DEBE-treated MoTe2 channel is as low as 12 meV. Additionally, because selective-area doping is possible, DEBE can allow the formation of both n- and p-type doped channels within the same atomic plane, which enables the creation of a nonvolatile and homogeneous MoTe2 p-n rectifier with an ideality factor of 1.1 and a rectification ratio of 1.3 × 103. These results indicate that the DEBE method is a simple, efficient, mask-free, and chemical dopant-free approach to selective-area doping for the development of van der Waals electronics with excellent device performances.
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Affiliation(s)
- Che-Yi Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Mu-Pai Lee
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yuan-Ming Chang
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Yi-Tang Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Feng-Shou Yang
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mengjiao Li
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Jiann-Yeu Chen
- Department of Material Science and Engineering and i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan
- Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 40227, Taiwan
| | - Ciao-Fen Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Meng-Yu Tsai
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Chun Lin
- Instrument Center, National Chung Hsing University, Taichung 40227, Taiwan
| | - Keiji Ueno
- Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
| | - Mahito Yamamoto
- Department of Pure and Applied Physics, Kansai University, Osaka 564-8680, Japan
| | - Shun-Tsung Lo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Chen-Hsin Lien
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Wen Chiu
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kazuhito Tsukagoshi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Ibaraki, Japan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
- Department of Material Science and Engineering and i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan
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12
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Chen C, Yang S, Lin C, Lee M, Tsai M, Yang F, Chang Y, Li M, Lee K, Ueno K, Shi Y, Lien C, Wu W, Chiu P, Li W, Lo S, Lin Y. Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106016. [PMID: 35831244 PMCID: PMC9404391 DOI: 10.1002/advs.202106016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 04/29/2022] [Indexed: 06/15/2023]
Abstract
Van der Waals (vdW) heterostructures-in which layered materials are purposely selected to assemble with each other-allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet-of-things applications. Here, an O2 -ultrasensitive MoTe2 material and an O2 -insensitive SnS2 material are integrated to form a vdW heterostructure, allowing the realization of charge-polarity control for multioperation-mode transistors through a simple and effective rapid thermal annealing strategy under dry-air and vacuum conditions. The charge-polarity control (i.e., doping and de-doping processes), which arises owing to the interaction between O2 adsorption/desorption and tellurium defects at the MoTe2 surface, means that the MoTe2 /SnS2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti-ambipolar transfer characteristics. Based on the dynamic control of the charge-polarity properties, an inverter, output polarity controllable amplifier, p-n diode, and ternary-state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.
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Affiliation(s)
- Ciao‐Fen Chen
- Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS)National Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Shih‐Hsien Yang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (Ministry of Education)Engineering Technology Research Center for 2D Material Information Functional Devices and Systems (Guangdong Province)Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China
| | - Che‐Yi Lin
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Mu‐Pai Lee
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
| | - Meng‐Yu Tsai
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Feng‐Shou Yang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Yuan‐Ming Chang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Mengjiao Li
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Ko‐Chun Lee
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Keiji Ueno
- Department of ChemistryGraduate School of Science and EngineeringSaitama UniversitySaitama338–8570Japan
| | - Yumeng Shi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (Ministry of Education)Engineering Technology Research Center for 2D Material Information Functional Devices and Systems (Guangdong Province)Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China
| | - Chen‐Hsin Lien
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Wen‐Wei Wu
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
- Center for the Intelligent Semiconductor Nano‐system Technology ResearchNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
| | - Po‐Wen Chiu
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Zhangjiang Fudan International Innovation CenterInstitute of OptoelectronicsDepartment of Materials ScienceFudan UniversityShanghai200433China
| | - Shun‐Tsung Lo
- Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS)National Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Yen‐Fu Lin
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Department of Materials Science and EngineeringInstitute of Nanosciencei‐Center for Advanced Science and Technology (i‐CAST)National Chung Hsing UniversityTaichung40227Taiwan
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13
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Akkanen STM, Fernandez HA, Sun Z. Optical Modification of 2D Materials: Methods and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110152. [PMID: 35139583 DOI: 10.1002/adma.202110152] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/24/2022] [Indexed: 06/14/2023]
Abstract
2D materials are under extensive research due to their remarkable properties suitable for various optoelectronic, photonic, and biological applications, yet their conventional fabrication methods are typically harsh and cost-ineffective. Optical modification is demonstrated as an effective and scalable method for accurate and local in situ engineering and patterning of 2D materials in ambient conditions. This review focuses on the state of the art of optical modification of 2D materials and their applications. Perspectives for future developments in this field are also discussed, including novel laser tools, new optical modification strategies, and their emerging applications in quantum technologies and biotechnologies.
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Affiliation(s)
| | - Henry Alexander Fernandez
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
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14
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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15
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Liu X, Islam A, Yang N, Odhner B, Tupta MA, Guo J, Feng PXL. Atomic Layer MoTe 2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing. ACS NANO 2021; 15:19733-19742. [PMID: 34913336 DOI: 10.1021/acsnano.1c07169] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Atomically thin semiconductors such as transition metal dichalcogenides have recently enabled diverse devices in the emerging two-dimensional (2D) electronics. While scalable 2D electronics demand monolithic integrated circuits consisting of complementary p-type and n-type transistors, conventional p-type and n-type doping in desired regions, monolithically in the same semiconducting atomic layers, remains elusive or impractical. Here, we report on an agile, high-precision scanning laser annealing approach to realizing 2D monolithic complementary logic circuits on atomically thin MoTe2, by reliably designating p-type and n-type transport polarity in the constituent transistors via localized laser annealing and modification of their Schottky contacts. Pristine p-type field-effect transistors (FETs) transform into n-type ones upon controlled laser annealing on their source/drain gold electrodes, exhibiting a mobility of 96.5 cm2 V-1 s-1 (the highest known to date) and an On/Off ratio of 106. Elucidation and validation of such an on-demand configuration of polarity in MoTe2 FETs further enable the construction and demonstration of essential logic circuits, including both inverter and NOR gates. This dopant-free, spatially precise scanning laser annealing approach to configuring monolithic complementary logic integrated circuits may enable programmable functions in 2D semiconductors, exhibiting potential for additively manufactured, scalable 2D electronics.
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Affiliation(s)
- Xia Liu
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Arnob Islam
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Ning Yang
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States
| | - Bradley Odhner
- Keithley Instruments, LLC, a Tektronix Company, Solon, Ohio 44139, United States
| | - Mary Anne Tupta
- Keithley Instruments, LLC, a Tektronix Company, Solon, Ohio 44139, United States
| | - Jing Guo
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States
| | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio 44106, United States
- Department of Electrical & Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States
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16
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Zhong F, Ye J, He T, Zhang L, Wang Z, Li Q, Han B, Wang P, Wu P, Yu Y, Guo J, Zhang Z, Peng M, Xu T, Ge X, Wang Y, Wang H, Zubair M, Zhou X, Gao P, Fan Z, Hu W. Substitutionally Doped MoSe 2 for High-Performance Electronics and Optoelectronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102855. [PMID: 34647416 DOI: 10.1002/smll.202102855] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 08/11/2021] [Indexed: 06/13/2023]
Abstract
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed experimentally and theoretically, and outstanding homojunction photodetectors and inverters are fabricated. MoSe2 p-n homojunction device with a low reverse current (300 pA) exhibits a high rectification ratio (104 ). The analysis of dark current reveals the domination of the Shockley-Read-Hall (SRH) and band-to-band tunneling (BTB) current. The homojunction photodetector exhibits a large open-circuit voltage (0.68 V) and short-circuit currents (1 µA), which is suitable for micro-solar cells. Furthermore, it possesses outstanding responsivity (0.28 A W-1 ), large external quantum efficiency (42%), and a high signal-to-noise ratio (≈107 ). Benefiting from the continuous energy band of homojunction, the response speed reaches up to 20 µs. Besides, the Ta-doped MoSe2 inverter exhibits a high voltage gain (34) and low power consumption (127 nW). This work lays a foundation for the practical application of 2D material devices.
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Affiliation(s)
- Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Lili Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhenhan Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Muhammad Zubair
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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17
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Seo JE, Das T, Park E, Seo D, Kwak JY, Chang J. Polarity Control and Weak Fermi-Level Pinning in PdSe 2 Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43480-43488. [PMID: 34460224 DOI: 10.1021/acsami.1c08028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material field-effect transistors (FETs) still remains a challenging issue, hindering the realization of complementary logic function in the 2D material platform. Here, we report a comprehensive study on the electrical characteristics of PdSe2 FETs with different metal contacts. It is found that the carrier polarity in PdSe2 FETs can be modulated simply by changing the metal contact due to the weak Fermi-level pinning in PdSe2. We demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter using the same channel material PdSe2 for n- and p-MOSFETs but with different metal contacts, suggesting the possible realization of PdSe2-based CMOS logic circuits.
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Affiliation(s)
- Jae Eun Seo
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Tanmoy Das
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Eunpyo Park
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea
| | - Dongwook Seo
- Department of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Joon Young Kwak
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea
| | - Jiwon Chang
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
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18
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Woo G, Kim HU, Yoo H, Kim T. Recyclable free-polymer transfer of nano-grain MoS 2 film onto arbitrary substrates. NANOTECHNOLOGY 2021; 32:045702. [PMID: 32998130 DOI: 10.1088/1361-6528/abbcea] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS2) films synthesized by plasma-enhanced chemical vapor deposition can be easily transferred onto arbitrary substrates (such as SiO2/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e. without residues or chemical solvents. The transferred MoS2 film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, x-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS2 film. Using the proposed water-assisted and recyclable transfer, MoS2/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.
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Affiliation(s)
- Gunhoo Woo
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Hyeong-U Kim
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States of America
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam, Gyeonggi-do 13120, Republic of Korea
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea
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