Revealing Nanoscale Chemical Heterogeneities in Polycrystalline Mo-BiVO4 Thin Films

Molybdenum-doped BiVO4 thin films: Facile preparation via hot-spin coating method and the relationship between surface statistical parameters and photoelectrochemical activity

Molybdenum-doped BiVO4 thin films were uniformly coated on indium-doped tin oxide (ITO) substrates via a facile modified hot spin coating (HSC) technique. The prepared layers were used as photoanode in a photoelectrochemical (PEC) cell. Different percentage of Mo dopant was examined to maximize the photo-current density (J) of the layers. The highest J value (872 ± 8 μA/cm2) was obtained by 5 atomic% of Mo doping. After that, the surface topographies of these samples were changed by varying the initial precursor concentration from 27 to 80 mM. The relation between surface topographies and the PEC activity of Mo-doped BiVO4 thin films was investigated from microscopic point of view by calculating the surface roughness exponent of α, and a mechanism for the PEC activity of Mo-doped BiVO4 photoanodes was proposed accordingly. The sample with a small roughness exponent provided a surface with jagged microscopic fluctuations which may trap the air molecules between the electrolyte and sample surface, hindering the fine atomic interaction for photo-generated electron-hole transition. Therefore, the layer with the highest roughness exponent (2α = 0.48 ± 0.03), which means the smoother microscopic surface and better interfacial contact with the electrolyte, exhibited the best PEC activity.

Dynamic semiconductor-electrolyte interface for sustainable solar water splitting over 600 hours under neutral conditions

Photoelectrochemical (PEC) water splitting that functions in pH-neutral electrolyte attracts increasing attention to energy demand sustainability. Here, we propose a strategy to in situ form a NiB layer by tuning the composition of the neutral electrolyte with the additions of nickel and borate species, which improves the PEC performance of the BiVO₄ photoanode. The NiB/BiVO₄ exhibits a photocurrent density of 6.0 mA cm^-2 at 1.23 V_RHE with an onset potential of 0.2 V_RHE under 1 sun illumination. The photoanode displays a photostability of over 600 hours in a neutral electrolyte. The additive of Ni²⁺ in the electrolyte, which efficiently inhibits the dissolution of NiB, can accelerate the photogenerated charge transfer and enhance the water oxidation kinetics. The borate species with B─O bonds act as a promoter of catalyst activity by accelerating proton-coupled electron transfer. The synergy effect of both species suppresses the surface charge recombination and inhibits the photocorrosion of BiVO₄.

Solution-based synthesis of wafer-scale epitaxial BiVO4 thin films exhibiting high structural and optoelectronic quality

We demonstrate a facile approach to solution-based synthesis of wafer-scale epitaxial bismuth vanadate (BiVO₄) thin films by spin-coating on yttria-stabilized zirconia. Epitaxial growth proceeds via solid-state transformation of initially formed polycrystalline films, driven by interface energy minimization. The (010)-oriented BiVO₄ films are smooth and compact, possessing remarkably high structural quality across complete 2'' wafers. Optical absorption is characterized by a sharp onset with a low sub-band gap response, confirming that the structural order of the films results in correspondingly high optoelectronic quality. This combination of structural and optoelectronic quality enables measurements that reveal a strong optical anisotropy of BiVO₄, which leads to significantly increased in-plane optical constants near the fundamental band edge that are of particular importance for maximizing light harvesting in semiconductor photoanodes. Temperature-dependent transport measurements confirm a thermally activated hopping barrier of ∼570 meV, consistent with small electron polaron conduction. This simple approach for synthesis of high-quality epitaxial BiVO₄, without the need for complex deposition equipment, enables a broadly accessible materials base to accelerate research aimed at understanding and optimizing photoelectrochemical energy conversion mechanisms.

The electron-transfer intermediates of the oxygen evolution reaction (OER) as polarons by in situ spectroscopy

The conversion of diffusive forms of energy (electrical and light) into short, compact chemical bonds by catalytic reactions regularly involves moving a carrier from an environment that favors delocalization to one that favors localization. While delocalization lowers the energy of the carrier through its kinetic energy, localization creates a polarization around the carrier that traps it in a potential energy minimum. The trapped carrier and its local distortion-termed a polaron in solids-can play a role as a highly reactive intermediate within energy-storing catalytic reactions but is rarely discussed as such. Here, we present this perspective of the polaron as a catalytic intermediate through recent in situ and time-resolved spectroscopic investigations of photo-triggered electrochemical reactions at material surfaces. The focus is on hole-trapping at metal-oxygen bonds, denoted M-OH*, in the context of the oxygen evolution reaction (OER) from water. The potential energy surface for the hole-polaron defines the structural distortions from the periodic lattice and the resulting "active" site of catalysis. This perspective will highlight how current and future time-resolved, multi-modal probes can use spectroscopic signatures of M-OH* polarons to obtain kinetic and structural information on the individual reaction steps of OER. A particular motivation is to provide the background needed for eventually relating this information to relevant catalytic descriptors by free energies. Finally, the formation of the O-O chemical bond from the consumption of M-OH*, required to release O₂ and store energy in H₂, will be discussed as the next target for experimental investigations.

Nanoscale Heterogeneities and Composition-Reactivity Relationships in Copper Vanadate Photoanodes

The photoelectrochemical performance of thin film photoelectrodes can be impacted by deviations from the stoichiometric composition, both at the macroscale and at the nanoscale. This issue is especially pronounced for the class of ternary compounds that are currently investigated for simultaneously achieving the optoelectronic characteristics and chemical stability required for solar fuel generation. Here, we combine macroscopic photoelectrochemical testing with atomic force microscopy (AFM) and scanning transmission X-ray microscopy (STXM) to reveal relationships between photoelectrochemical activity, nanoscale morphology, and local chemical composition in copper vanadate (CVO) thin films as a model system. For films with varying Cu/(Cu + V) ratios around the ideal stoichiometry of stoiberite Cu₅V₂O₁₀, AFM resolves submicrometer morphology variations, which correlate with variations of the Cu content resolved by STXM. Both stoichiometric and Cu-deficient films exhibit a clear photoresponse, which indicates electronic tolerance to reduced Cu content. While both films exhibit homogeneous O and V content, they are also characterized by local regions of Cu enrichment and depletion that extend beyond individual grains. By contrast, Cu-rich photoelectrodes exhibit a tendency toward CuO secondary phase formation and a significantly reduced photoelectrochemical activity, indicating a significantly poor electronic tolerance to Cu-enrichment. These findings highlight that the average film composition at the macroscale is insufficient for defining structure-function relationships in complex ternary compounds. Rather, correlating microscopic variations in chemical composition to macroscopic photoelectrochemical performance provides insights into photocatalytic activity and stability that are otherwise not apparent from pure macroscopic characterization.