WS2 Nanotubes: Electrical Conduction and Field Emission Under Electron Irradiation and Mechanical Stress

Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS2 Nanomaterials: A Review

Tungsten disulfide (WS2) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS2. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS2 through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.

WS2 Nanotube Transistor for Photodetection and Optoelectronic Memory Applications

Nanotube and nanowire transistors hold great promises for future electronic and optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS2) nanotube is utilized as the channel of a back-gated field-effect transistor. The device exhibits a p-type behavior in ambient conditions, with a hole mobility µp ≈  1.4 cm2V-1s-1 and a subthreshold swing SS ≈ 10 V dec-1. Current-voltage characterization at different temperatures reveals that the device presents two slightly different asymmetric Schottky barriers at drain and source contacts. Self-powered photoconduction driven by the photovoltaic effect is demonstrated, and a photoresponsivity R ≈ 10 mAW-1 at 2 V drain bias and room temperature. Moreover, the transistor is tested for data storage applications. A two-state memory is reported, where positive and negative gate pulses drive the switching between two different current states, separated by a window of 130%. Finally, gate and light pulses are combined to demonstrate an optoelectronic memory with four well-separated states. The results herein presented are promising for data storage, Boolean logic, and neural network applications.

Nanotubes from Transition Metal Dichalcogenides: Recent Progress in the Synthesis, Characterization and Electrooptical Properties

Inorganic layered compounds (2D-materials), particularly transition metal dichalcogenide (TMDC), are the focus of intensive research in recent years. Shortly after the discovery of carbon nanotubes (CNTs) in 1991, it was hypothesized that nanostructures of 2D-materials can also fold and seam forming, thereby nanotubes (NTs). Indeed, nanotubes (and fullerene-like nanoparticles) of WS2 and subsequently from MoS2 were reported shortly after CNT. However, TMDC nanotubes received much less attention than CNT until recently, likely because they cannot be easily produced as single wall nanotubes with well-defined chiral angles. Nonetheless, NTs from inorganic layered compounds have become a fertile field of research in recent years. Much progress has been achieved in the high-temperature synthesis of TMDC nanotubes of different kinds, as well as their characterization and the study of their properties and potential applications. Their multiwall structure is found to be a blessing rather than a curse, leading to intriguing observations. This concise minireview is dedicated to the recent progress in the research of TMDC nanotubes. After reviewing the progress in their synthesis and structural characterization, their contributions to the research fields of energy conversion and storage, polymer nanocomposites, andunique optoelectronic devices are being reviewed. These studies suggest numerous potential applications for TMDC nanotubes in various technologies, which are briefly discussed.

Multilayer WS2 for low-power visible and near-infrared phototransistors

Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.

Unleashing the potential of tungsten disulfide: Current trends in biosensing and nanomedicine applications

The discovery of graphene ignites a great deal of interest in the research and advancement of two-dimensional (2D) layered materials. Within it, semiconducting transition metal dichalcogenides (TMDCs) are highly regarded due to their exceptional electrical and optoelectronic properties. Tungsten disulfide (WS2) is a TMDC with intriguing properties, such as biocompatibility, tunable bandgap, and outstanding photoelectric characteristics. These features make it a potential candidate for chemical sensing, biosensing, and tumor therapy. Despite the numerous reviews on the synthesis and application of TMDCs in the biomedical field, no comprehensive study still summarizes and unifies the research trends of WS2 from synthesis to biomedical applications. Therefore, this review aims to present a complete and thorough analysis of the current research trends in WS2 across several biomedical domains, including biosensing and nanomedicine, covering antibacterial applications, tissue engineering, drug delivery, and anticancer treatments. Finally, this review also discusses the potential opportunities and obstacles associated with WS2 to deliver a new outlook for advancing its progress in biomedical research.

DFT Study of WS2-Based Nanotubes Electronic Properties under Torsion Deformations

In this study, the influence of torsional deformations on the properties of chiral WS2-based nanotubes was investigated. All calculations presented in this study were performed using the density functional theory (DFT) and atomic gaussian type orbitals basis set. Nanotubes with chirality indices (8, 2), (12, 3), (24, 6) and (36, 9) corresponding to diameters of 10.68 Å, 14.90 Å, 28.26 Å and 41.90 Å, respectively, are examined. Our results reveal that for nanotubes with smaller diameters, the structure obtained through rolling from a slab is not optimal and undergoes spontaneous deformation. Furthermore, this study demonstrates that the nanotube torsion deformation leads to a reduction in the band gap. This observation suggests the potential for utilizing such torsional deformations to enhance the photocatalytic activity of the nanotubes.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi2S3 photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W-1, 5.55 × 106%, and 3.68 × 1013 Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi2S3 photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi2S3 nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.

A fully printed ultrafast Si/WS2 quantum dot photodetector with very high responsivity over the UV to near-infrared region

Two-dimensional (2D) semiconducting material-based photodetectors (PDs) with high responsivity and fast photo-response are of great interest for various applications such as optical communications, biomedical imaging, security surveillance, environmental monitoring, etc. Additive manufacturing such as 2D printing is a potentially less cumbersome and cost-effective alternative to conventional microdevice fabrication processes used in the production of PDs. Here, we have fabricated a Si/WS2 quantum dot-based heterostructure PD with a very short electrode gap of 40 μm by a simple printing process. The printed p-Si/n-WS2 PD shows an excellent photo-to-dark current ratio of 5121 under 405 nm illumination (23.8 mW cm-2). The printed photodetector exhibits a peak responsivity of 126 A W-1 and a peak detectivity of 9.24 × 1012 Jones over a very broad wavelength range (300-1100 nm), which is much superior to commercial Si PDs. A high external quantum efficiency of 3.9 × 104% and an ultrafast photoresponse (7.8 μs rise time and 9.5 μs fall time) make the device an attractive candidate as an efficient photodetector. The origin of high-performance photodetection is traced to a nearly defect-free interface at the heterojunction, leading to highly efficient charge separation and high photocurrent. Finally, the 2D-printed device exhibits good photodetection even in self-powered conditions, which is very attractive.

Silane functionalization of WS2 nanotubes for interaction with poly(lactic acid)

Functionalisation of nanofillers is required for the promotion of strong interfacial interactions with polymers and is essential as a route for the preparation of (nano)composites with superior mechanical properties. Tungsten disulphide nanotubes (WS₂ NTs) were functionalized using (3-aminopropyl) triethoxysilane (APTES) for preparation of composites with poly(lactic acid) (PLA). The WS₂ NTs : APTES ratios used were 1 : 1, 1 : 2 and 1 : 4 WS₂ NTs : APTES. The APTES formed siloxane networks bound to the NTs via surface oxygen and carbon moieties adsorbed on the WS₂ NTs surface, detected by X-ray photoelectron spectroscopy (XPS) studies and chemical mapping using energy dispersive X-ray spectroscopy in the scanning transmission electron microscope (STEM-EDS). The successful silane modification of the WS₂ NTs was clearly evident with both significant peak shifting by as much as 60 cm^-1 for Si-O-Si vibrations (FTIR) and peak broadening of the A_1g band in the Raman spectra of the WS₂ NTs. The evolution of new bands was also observed and are associated with Si-CH₂-CH₂ and, symmetric and assymetric -NH³⁺ deformation modes (FTIR). Further evidence for functionalization was obtained from zeta potential measurements as there was a change in surface charge from negative for pure WS₂ NTs to positive for APTES modified WS₂ NTs. Additionally, the thermal stability of APTES was shifted to much higher temperatures as it was bound to the WS₂ NTs. The APTES modified WS₂ NTs were organophilic and readily dispersed in PLA, while presence of the pendant amine and hydroxyl groups resulted in strong interfacial interactions with the polymer matrix. The inclusion of as little as 0.5 wt% WS₂ NTs modified with 2.0 wt% APTES resulted in an increase of 600% in both the elongation at break (a measure of ductility) and the tensile toughness relative to neat PLA, without impacting the stiffness or strength of the polymer.

Transition-Metal Dichalcogenides in Electrochemical Batteries and Solar Cells

The advent of new nanomaterials has resulted in dramatic developments in the field of energy production and storage. Due to their unique structure and properties, transition metal dichalcogenides (TMDs) are the most promising from the list of materials recently introduced in the field. The amazing progress in the use TMDs for energy storage and production inspired us to review the recent research on TMD-based catalysts and electrode materials. In this report, we examine TMDs in a variety of electrochemical batteries and solar cells with special focus on MoS₂ as the most studied and used TMD material.

WS2 Nanotube-Embedded SiOC Fibermat Electrodes for Sodium-Ion Batteries

Layered transition metal dichalcogenides (TMDs) such as tungsten disulfide (WS₂) are promising materials for a wide range of applications, including charge storage in batteries and supercapacitors. Nevertheless, TMD-based electrodes suffer from bottlenecks such as capacity fading at high current densities, voltage hysteresis during the conversion reaction, and polysulfide dissolution. To tame such adverse phenomena, we fabricate composites with WS₂ nanotubes. Herein, we report on the superior electrochemical performance of ceramic composite fibers comprising WS₂ nanotubes (WS₂NTs) embedded in a chemically robust molecular polymer-derived ceramic matrix of silicon-oxycarbide (SiOC). Such a heterogeneous fiber structure was obtained via electrospinning of WS₂NT/preceramic polymer solution followed by pyrolysis at elevated temperatures. The electrode capacity fading in WS₂NTs was curbed by the synergistic effect between WS₂NT and SiOC. As a result, the composite electrode exhibits high initial capacity of 454 mAh g^-1 and the capacity retention approximately 2-3 times higher than that of the neat WS₂NT electrode.

Self-Sensing WS2 Nanotube Torsional Resonators

We demonstrate self-sensing tungsten disulfide nanotube (WS₂ NT) torsional resonators. These resonators exhibit all-electrical self-sensing operation with electrostatic excitation and piezoresistive motion detection. We show that the torsional motion of the WS₂ NT resonators results in a change of the nanotube electrical resistance, with the most significant change around their mechanical resonance, where the amplitude of torsional vibrations is maximal. Atomic force microscopy analysis revealed the torsional and bending stiffness of the WS₂ NTs, which we used for modeling the behavior of the WS₂ NT devices. In addition, the solution of the electrostatic boundary value problem shows how the spatial potential and electrostatic field lines around the device impact its capacitance. The results uncover the coupling between the electrical and mechanical behaviors of WS₂ and emphasize their potential to operate as key components in functional devices, such as nanosensors and radio frequency devices.

Defect-suppressed submillimeter-scale WS2 single crystals with high photoluminescence quantum yields by alternate-growth-etching CVD

Defects, such as uncontrollable vacancies, will intensively degrade the material properties and device performance of CVD-grown transition metal dichalcogenides (TMDs). Although vacancies can be repaired by some post-processing measures, these treatments are usually time-consuming, complicated and may introduce uncontrollable chemical contaminants into TMDs. How to efficiently suppress the uncontrollable defects during CVD growth and acquire intrinsic high-quality CVD-grown TMDs without any after-treatment remains a critical challenge, and has not yet been well resolved. Here, an alternate-growth-etching (AGE) CVD method was demonstrated to fabricate defect-suppressed submillimeter-scale monolayer WS₂ single crystals. Compared with normal CVD, the grain size of the as-grown WS₂ can be enlarged by 4-5 times (∼520 μm) and the growth rate of ∼14.4 μm min^-1 is also at a high level compared to reported results. Moreover, AGE-CVD can efficiently suppress atomic vacancies in WS₂. In every growth-etching cycle, the etching of WS₂ occurs preferentially at the defective sites, which will be healed at the following growth stage. As a result, WS₂ monolayers obtained by AGE-CVD possess higher crystal quality, carrier mobility (8.3 cm² V^-1 s^-1) and PL quantum yield (QY, 52.6%) than those by normal CVD. In particular, such a PL QY is the highest value ever reported for in situ CVD-grown TMDs without any after-treatment, and is even comparable to the values of mechanically exfoliated samples. This AGE-CVD method is also appropriate for the synthesis of other high-quality TMD single crystals on a large-scale.

Synthesis, physico-chemical characterization and field emission behaviour of 3D chrysanthemum like pristine ReS2, and ReS2-rGO nanocomposite

3D chrysanthemum like pristine ReS2 and nanocomposite of ReS2 with reduced graphene oxide (rGO) have been synthesized using facile one step hydrothermal method, followed by physico-chemical characterizations to reveal their phase, structural and electronic properties. Efforts have been made to reveal the influence of process parameters on morphology and growth of the as-synthesized products. From application point of view, field emission (FE) behavior of pristine ReS2 and ReS2-rGO nanocomposite emitters has been investigated at base pressure of 1 × 10–8 torr. The ReS2 and ReS2-rGO nanocomposite emitters showed values of turn-on field (corresponding to emission current density of 1μA cm−2) as 2.10 and 1.66 V μm−1, and field enhancement factor (β) as ∼965 and 1176, Furthermore, the ReS2-rGO nanocomposite emitter delivered maximum emission current density of ∼1472 μA cm−2 at applied field of 3.1 V μm−1. Both the emitters exhibited good emission current stability at pre-set value ∼5 μA over more than 3 h duration. The superior FE properties of the ReS2-rGO nanocomposite emitter are attributed to optimized morphology offering high field enhancement factor coupled with modulation of electronic properties reflected as lowering of the work function. The value of work function of ReS2-rGO nanocomposite, measured using a retarding field analyzer, is found to be 4.29, lower than that of the pristine sample (4.49 eV). The results signify that functionality of pristine nanostructures is greatly improved via formation of nanocomposites and desirable nanocomposites possessing unique morphology can be synthesized under optimized experimental conditions using a facile and inexpensive hydrothermal route.

Torsional moduli of transition metal dichalcogenide nanotubes from first principles

We calculate the torsional moduli of single-walled transition metal dichalcogenide (TMD) nanotubes usingab initiodensity functional theory (DFT). Specifically, considering forty-five select TMD nanotubes, we perform symmetry-adapted DFT calculations to calculate the torsional moduli for the armchair and zigzag variants of these materials in the low-twist regime and at practically relevant diameters. We find that the torsional moduli follow the trend: MS₂> MSe₂> MTe₂. In addition, the moduli display a power law dependence on diameter, with the scaling generally close to cubic, as predicted by the isotropic elastic continuum model. In particular, the shear moduli so computed are in good agreement with those predicted by the isotropic relation in terms of the Young's modulus and Poisson's ratio, both of which are also calculated using symmetry-adapted DFT. Finally, we develop a linear regression model for the torsional moduli of TMD nanotubes based on the nature/characteristics of the metal-chalcogen bond, and show that it is capable of making reasonably accurate predictions.

Optoelectronic properties and strain regulation of the 2D WS2/ZnO van der Waals heterostructure

The combination of zinc oxide (ZnO) and transition metal dichalcogenide (TMD) nanoparticles has higher photocatalytic efficiency and field emission performance than TMDs or ZnO, as well as significantly higher water cracking photocatalytic activity. By first-principles calculation, we investigated the structural and optoelectronic properties of the two-dimensional (2D) WS₂/ZnO van der Waals (vdWs) heterostructure, and the regulation effect of biaxial strain. It is revealed that the conduction-band minimum (CBM) is lower than the reduction potential of water (EH⁺_/H2 ≈ −4.44 eV), and the valence-band maximum (VBM) is lower than the oxidation potential (E_O2/H2O ≈ −5.67 eV), thus the heterostructure is a good oxidant in the water decomposition process, but cannot match the requirements for water reduction. By applying a −2% biaxial strain, the CBM is elevated to a position higher than the reduction potential of water, then the 2D vdWs WS₂/ZnO heterostructure becomes a good material for the application of water reduction and other photovoltaic and photocatalytic devices.

2D WS₂/ZnO vdWs heterostructure becomes a good material for water-splitting applications after a strain is applied.

An interlinked computational–experimental investigation into SnS nanoflakes for field emission applications

Layered binary semiconductor materials have attracted significant interest as field emitters due to their low work function, mechanical stability, and high thermal and electrical conductivity.

Mechanical Characterisation of Single-Walled Carbon Nanotube Heterojunctions: Numerical Simulation Study

The elastic properties of single-walled carbon nanotube heterojunctions were investigated using conventional tensile, bending and torsion tests. A three-dimensional finite element model was built in order to describe the elastic behaviour of cone heterojunctions (armchair-armchair and zigzag-zigzag). This comprehensive systematic study, to evaluate the tensile, bending and torsional rigidities of heterojunctions, enabled the formulation analytical methods for easy assessment of the elastic properties of heterojunctions using a wide range of their geometrical parameters.