Manipulation of Zinc Oxide with Zirconium Doping for Efficient Inverted Organic Solar Cells

In-Doped ZnO Electron Transport Layer for High-Efficiency Ultrathin Flexible Organic Solar Cells

Sol-gel processed zinc oxide (ZnO) is one of the most widely used electron transport layers (ETLs) in inverted organic solar cells (OSCs). The high annealing temperature (≈200 °C) required for sintering to ensure a high electron mobility however results in severe damage to flexible substrates. Thus, flexible organic solar cells based on sol-gel processed ZnO exhibit significantly lower efficiency than rigid devices. In this paper, an indium-doping approach is developed to improve the optoelectronic properties of ZnO layers and reduce the required annealing temperature. Inverted OSCs based on In-doped ZnO (IZO) exhibit a higher efficiency than those based on ZnO for a range of different active layer systems. For the PM6:L8-BO system, the efficiency increases from 17.0% for the pristine ZnO-based device to 17.8% for the IZO-based device. The IZO-based device with an active layer of PM6:L8-BO:BTP-eC9 exhibits an even higher efficiency of up to 18.1%. In addition, a 1.2-micrometer-thick inverted ultrathin flexible organic solar cell is fabricated based on the IZO ETL that achieves an efficiency of 17.0% with a power-per-weight ratio of 40.4 W g-1, which is one of the highest efficiency for ultrathin (less than 10 micrometers) flexible organic solar cells.

Over 19% Efficient Inverted Organic Photovoltaics Featuring a Molecularly Doped Metal Oxide Electron-Transporting Layer

Molecular doping is commonly utilized to tune the charge transport properties of organic semiconductors. However, applying this technique to electrically dope inorganic materials like metal oxide semiconductors is challenging due to the limited availability of molecules with suitable energy levels and processing characteristics. Herein, n-type doping of zinc oxide (ZnO) films is demonstrated using 1,3-dimethylimidazolium-2-carboxylate (CO2-DMI), a thermally activated organic n-type dopant. Adding CO2-DMI into the ZnO precursor solution and processing it atop a predeposited indium oxide (InOx) layer yield InOx/n-ZnO heterojunctions with increased electron field-effect mobility of 32.6 cm2 V-1 s-1 compared to 18.5 cm2 V-1 s-1 for the pristine InOx/ZnO bilayer. The improved electron transport originates from the ZnO's enhanced crystallinity, reduced hydroxyl concentrations, and fewer oxygen vacancy groups upon doping. Applying the optimally doped InOx/n-ZnO heterojunctions as the electron-transporting layers (ETLs) in organic photovoltaics (OPVs) yields cells with improved power conversion efficiency of 19.06%, up from 18.3% for devices with pristine ZnO, and 18.2% for devices featuring the undoped InOx/ZnO ETL. It is shown that the all-around improved OPV performance originates from synergistic effects associated with CO2-DMI doping of the thermally grown ZnO, highlighting its potential as an electronic dopant for ZnO and potentially other metal oxides.

18.73% efficient and stable inverted organic photovoltaics featuring a hybrid hole-extraction layer

Developing efficient and stable organic photovoltaics (OPVs) is crucial for the technology's commercial success. However, combining these key attributes remains challenging. Herein, we incorporate the small molecule 2-((3,6-dibromo-9H-carbazol-9-yl)ethyl)phosphonic acid (Br-2PACz) between the bulk-heterojunction (BHJ) and a 7 nm-thin layer of MoO₃ in inverted OPVs, and study its effects on the cell performance. We find that the Br-2PACz/MoO₃ hole-extraction layer (HEL) boosts the cell's power conversion efficiency (PCE) from 17.36% to 18.73% (uncertified), making them the most efficient inverted OPVs to date. The factors responsible for this improvement include enhanced charge transport, reduced carrier recombination, and favourable vertical phase separation of donor and acceptor components in the BHJ. The Br-2PACz/MoO₃-based OPVs exhibit higher operational stability under continuous illumination and thermal annealing (80 °C). The T₈₀ lifetime of OPVs featuring Br-2PACz/MoO₃ - taken as the time over which the cell's PCE reduces to 80% of its initial value - increases compared to MoO₃-only cells from 297 to 615 h upon illumination and from 731 to 1064 h upon continuous heating. Elemental analysis of the BHJs reveals the enhanced stability to originate from the partially suppressed diffusion of Mo ions into the BHJ and the favourable distribution of the donor and acceptor components induced by the Br-2PACz.

Hole/Electron Transporting Materials for Nonfullerene Organic Solar Cells

Nonfullerene acceptor based organic solar cells (NF-OSCs) have witnessed rapid progress over the past few years owing to the intensive research efforts on novel electron donor and nonfullerene acceptor (NFA) materials, interfacial engineering, and device processing techniques. Interfacial layers including electron transporting layers (ETL) and hole transporting layers (HTLs) are crucially important in the OSCs for facilitating electron and hole extraction from the photoactive blend to the respective electrodes. In this review, the lates progress in both ETLs and HTLs for the currently prevailing NF-OSCs are discussed, in which the ETLs are summarized from the categories of metal oxides, metal chelates, non-conjugated electrolytes and conjugated electrolytes, and the HTLs are summarized from the categories of inorganic and organic materials. In addition, some bifunctional interlayer materials served as both ETLs and HTLs are also introduced. Finally, the prospects of ETL/HTL materials for NF-OSCs are provided.

Dual-doping in the bulk and the surface to ameliorate the hematite anode for photoelectrochemical water oxidation

Aiming at the drawbacks of hematite like poor conductivity and tardy oxidation kinetics, herein, we utilized dual dopants in the bulk and surface to ameliorate the situation. Specifically, doping optimal amount of Zr⁴⁺ in the hematite (Zr:Fe₂O₃) enhances the conductivity of hematite due to the higher charge carrier density. Further, F:FeOOH could form p-n heterojunction in bulk where a potential barrier is built up that repels electrons but prompts holes transferring to F:FeOOH for water oxidation. What's more, the high electronegative of F^- would withdraw electron from the Fe site in FeOOH, and the enhanced positive electricity of Fe³⁺ is beneficial for adsorption of OH^- as well as enhance the conductivity of FeOOH to expedite holes transfer. As a result, the composite photoanode (F:FeOOH/Zr:Fe₂O₃) shows a 3.25-times enhanced photocurrent density comparing with α-Fe₂O₃. The special designation employs ultrathin F:FeOOH to act as both p-type semiconductor and efficient co-catalyst, avoiding redundant layer that would extend the migration distance of holes. On the top of that, the dual modification approach provides an extensive prospect for the further application of hematite.

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

Indium doping of cadmium sulfide (CdS) by chemical bath deposition (CBD) can be an efficient strategy to boost the CIGSSe efficiency. However, limited by the extremely low solubility of In₂S₃, it is difficult to increase the In doping contents and inhibit the band energy-level regulation for CdS through the traditional CBD process. In this work, we perform a novel CBD method to prepare an indium-doped CdS (In:CdS) buffer, in which the indium source is sequentially slowly added in the growing aqueous solution. In this process, the In ion concentration involved in the real-time deposition is significantly reduced. Thus, compact and uniform In:CdS with higher indium doping content is obtained. Indium doping can elevate the CdS conduction band edge and construct a more favorable spike band alignment with a CIGSSe absorber. Moreover, it introduces efficient carrier transport and reduced interface defect density. As a result, improved CIGSSe heterojunction quality is realized by utilizing In:CdS. Also, the solution-processed CIGSSe device with In:CdS as a buffer yields a high efficiency of 16.4%, with a high V_OC of 670 mV and an FF of 75.3%.

Matching Charge Extraction Contact for Infrared PbS Colloidal Quantum Dot Solar Cells

Infrared solar cells (IRSCs) can supplement silicon or perovskite SCs to broaden the utilization of the solar spectrum. As an ideal infrared photovoltaic material, PbS colloidal quantum dots (CQDs) with tunable bandgaps can make good use of solar energy, especially the infrared region. However, as the QD size increases, the energy level shrinking and surface facet evolution makes us reconsider the matching charge extraction contacts and the QD passivation strategy. Herein, different to the traditional sol-gel ZnO layer, energy-level aligned ZnO thin film from a magnetron sputtering method is adopted for electron extraction. In addition, a modified hybrid ligand recipe is developed for the facet passivation of large size QDs. As a result, the champion IRSC delivers an open circuit voltage of 0.49 V and a power conversion efficiency (PCE) of 10.47% under AM1.5 full-spectrum illumination, and the certified PCE is over 10%. Especially the 1100 nm filtered efficiency achieves 1.23%. The obtained devices also show high storage stability. The present matched electron extraction and QD passivation strategies are expected to highly booster the IR conversion yield and promote the fast development of new conception QD optoelectronics.

Zirconium-Doped Zinc Oxide Nanoparticles as Cathode Interfacial Layers for Efficiently Rigid and Flexible Organic Solar Cells

Low-temperature zinc oxide nanoparticles (ZnO NPs) are widely applied as cathode interfacial layers (CILs) for rigid and flexible organic solar cells. However, the inferior optoelectronic properties of ZnO NPs constrain the improvement in the photovoltaic performance and enhance the thickness sensitivity. Herein, upon application of this ZnO:Zr NP as a CIL for inverted device construction, the maximum power conversion efficiency (PCE_max) is increased to 17.7%, with an enhancement of 12.0% compared to that of the pristine ZnO-based devices (15.8%). A series of optoelectronic characterizations have revealed that the Zr doping methodology would enhance the charge generation and extraction process and suppress trap-assisted recombination, which is beneficial for the synergistic improvement of the thickness tolerance and shelf stability. Encouragingly, ZnO:Zr NPs can be easily fabricated through a doctor-blade coating technique with remarkable performance (16.6%). More critically, this approach can be applied to the development of high-performance flexible solar cells, with a superb PCE of 16.0%.

Aminonaphthalimide-Based Molecular Cathode Interlayers for As-Cast Organic Solar Cells

A series of imide-based small molecules, namely NA, NAA, and NEA with simple structures, were designed and synthesized by introducing different amine side-chains into the benzene unit of imide, which were used as cathode interfacial materials in organic solar cells (OSCs). The amine side-chain substitution positions were systematically investigated with these small-molecule imides. Compared with NA without amide chains-NAA, and NEA, with 3-dimethylaminopropylamine and ethylenediamine chains, respectively-show bathochromic shifts in absorption, decreased band gaps, and higher highest occupied molecular orbital (HOMO) energy levels. A power conversion efficiency (PCE) of 15.04 % was obtained with the NEA-based as-cast OSCs with a high open-circuit voltage and fill factor for PM6 : Y6 blend and the maximum PCE of 15.80 % was reached for as-cast PM6 : Y6 : IT-M ternary OSCs. NEA exhibits better conductivity, higher electron mobility, and stronger the capability of lower work function of cathode among three molecules, affording OSCs with better photovoltaic performance. Additionally, these three molecules show excellent thermal stability both in solution and in films at 150 °C. The results indicate that imide-based small molecules are promising cathode interfacial materials for commercial OSCs.