1
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Cerasoli FT, Donadio D. Effective optimization of atomic decoration in giant and superstructurally ordered crystals with machine learning. J Chem Phys 2024; 161:044101. [PMID: 39037130 DOI: 10.1063/5.0213132] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Accepted: 07/05/2024] [Indexed: 07/23/2024] Open
Abstract
Crystals with complicated geometry are often observed with mixed chemical occupancy among Wyckoff sites, presenting a unique challenge for accurate atomic modeling. Similar systems possessing exact occupancy on all the sites can exhibit superstructural ordering, dramatically inflating the unit cell size. In this work, a crystal graph convolutional neural network (CGCNN) is used to predict optimal atomic decorations on fixed crystalline geometries. This is achieved with a site permutation search (SPS) optimization algorithm based on Monte Carlo moves combined with simulated annealing and basin-hopping techniques. Our approach relies on the evidence that, for a given chemical composition, a CGCNN estimates the correct energetic ordering of different atomic decorations, as predicted by electronic structure calculations. This provides a suitable energy landscape that can be optimized according to site occupation, allowing the prediction of chemical decoration in crystals exhibiting mixed or disordered occupancy, or superstructural ordering. Verification of the procedure is carried out on several known compounds, including the superstructurally ordered clathrate compound Rb8Ga27Sb16 and vacancy-ordered perovskite Cs2SnI6, neither of which was previously seen during the neural network training. In addition, the critical temperature of an order-disorder phase transition in solid solution CuZn is probed with our SPS routines by sampling site configuration trajectories in the canonical ensemble. This strategy provides an accurate method for determining favorable decoration in complex crystals and analyzing site occupation at unprecedented speed and scale.
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Affiliation(s)
- Frank T Cerasoli
- Department of Chemistry, University of California, Davis, California 95616, USA
| | - Davide Donadio
- Department of Chemistry, University of California, Davis, California 95616, USA
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2
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Ngo DA, Nguyen NM, Tran CK, Van Tran TT, Thi Tran NH, Thao Bui TT, Duy LT, Dang VQ. A study on a broadband photodetector based on hybrid 2D copper oxide/reduced graphene oxide. NANOSCALE ADVANCES 2024; 6:1460-1466. [PMID: 38419870 PMCID: PMC10898423 DOI: 10.1039/d3na00796k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 01/24/2024] [Indexed: 03/02/2024]
Abstract
These days, photodetectors are a crucial part of optoelectronic devices, ranging from environmental monitoring to international communication systems. Therefore, fabricating these devices at a low cost but obtaining high sensitivity in a wide range of wavelengths is of great interest. This report introduces a simple solution-processed hybrid 2D structure of CuO and rGO for broadband photodetector applications. Particularly, 2D CuO acts as the active material, absorbing light to generate electron-hole pairs, while 2D rGO plays the role of a transport layer, driving charge carriers between two electrodes. Our device exhibits remarkable sensitivity to a wide wavelength range from 395 nm to 945 nm (vis-NIR region). Interestingly, our devices' responsivity and photoconductive gain were calculated (under 395 nm wavelength excitation) to be up to 8 mA W-1 and 28 fold, respectively, which are comparable values with previous publications. Our hybrid 2D structure between rGO and CuO enables a potential approach for developing low-cost but high-performance optoelectronic devices, especially photodetectors, in the future.
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Affiliation(s)
- Duc Anh Ngo
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Nhat Minh Nguyen
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Cong Khanh Tran
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Thi Thanh Van Tran
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Nhu Hoa Thi Tran
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Center for Innovative Materials and Architectures (INOMAR) Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Thi Thu Thao Bui
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Le Thai Duy
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
| | - Vinh Quang Dang
- Faculty of Materials Science and Technology, University of Science 227 Nguyen Van Cu Street District 5 Ho Chi Minh City 700000 Vietnam
- Center for Innovative Materials and Architectures (INOMAR) Ho Chi Minh City 700000 Vietnam
- Vietnam National University (VNU-HCM) Ho Chi Minh City 700000 Vietnam
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3
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Liu G, Guo F, Zhang M, Liu Y, Hao J, Yu W, Li S, Hu B, Zhang B, Hao L. All-in-One Optoelectronic Logic Gates Enabled by Bipolar Spectral Photoresponse of CdTe/SnSe Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37294624 DOI: 10.1021/acsami.3c04541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Optoelectronic logic gate devices (OLGDs) have attracted significant attention in high-density information processors; however, multifunctional logic operation in a single device is technically challenging due to the unidirectional electrical transport. In this work, we deliberately design all-in-one OLGDs based on self-powered CdTe/SnSe heterojunction photodetectors. The SnSe nanorod (NR) array is grown on the sputtered CdTe film via a glancing-angle deposition technique to form a heterojunction device. At the interface, the photovoltaic (PV) effect in the CdTe/SnSe heterojunction and the photothermoelectric (PTE) effect from the SnSe NRs are combined together to induce the reversed photocurrent, leading to a unique bipolar spectral response. The competition between PV and PTE in different spectral ranges is thus employed to control the photocurrent polarity, and five basic logic gates of OR, AND, NAND, NOR, and NOT can be performed just with a single heterojunction. Our findings indicate the large potentials of the CdTe/SnSe heterojunctions as logic units in next-generation sensing-computing systems.
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Affiliation(s)
- Guanchu Liu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Fuhai Guo
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Jingyi Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong 266580, China
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4
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Li B, Zhang H, Tao Q, Shen X, Huang Z, He K, Yi C, Li X, Zhang L, Zhang Z, Liu J, Tang J, Zhou Y, Wang D, Yang X, Zhao B, Wu R, Li J, Li B, Duan X. Thickness-Dependent Topological Hall Effect in 2D Cr 5 Si 3 Nanosheets with Noncollinear Magnetic Phase. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210755. [PMID: 36719342 DOI: 10.1002/adma.202210755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2022] [Revised: 01/05/2023] [Indexed: 06/18/2023]
Abstract
Antiferromagnets with noncollinear spin order are expected to exhibit unconventional electromagnetic response, such as spin Hall effects, chiral abnormal, quantum Hall effect, and topological Hall effect. Here, 2D thickness-controlled and high-quality Cr5 Si3 nanosheets that are compatible with the complementary metal-oxide-semiconductor technology are synthesized by chemical vapor deposition method. The angular dependence of electromagnetic transport properties of Cr5 Si3 nanosheets is investigated using a physical property measurement system, and an obvious topological Hall effect (THE) appears at a large tilted magnetic field, which results from the noncollinear magnetic structure of the Cr5 Si3 nanosheet. The Cr5 Si3 nanosheets exhibit distinct thickness-dependent perpendicular magnetic anisotropy (PMA), and the THE only emerges in the specific thickness range with moderate PMA. This work provides opportunities for exploring fundamental spin-related physical mechanisms of noncollinear antiferromagnet in ultrathin limit.
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Affiliation(s)
- Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Quanyang Tao
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Ziwei Huang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Kun He
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
| | - Chen Yi
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
- Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
| | - Xu Li
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Liqiang Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Zucheng Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jialing Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jingmei Tang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yucheng Zhou
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Di Wang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing, 211189, P. R. China
| | - Ruixia Wu
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Bo Li
- Advanced Semiconductor Technology and Application Engineering Research Center of Ministry of Education of China, Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, P. R. China
- Shenzhen Research Institute of Hunan University, Shenzhen, 518063, P. R. China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
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5
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Wang Z, Wei L, Wang S, Wu T, Sun L, Ma C, Tao X, Wang S. 2D SiP 2/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15810-15818. [PMID: 36939047 DOI: 10.1021/acsami.2c19803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials are extremely attractive for the construction of highly sensitive photodetectors due to their unique electronic and optical properties. However, developing 2D photodetectors with ultrahigh sensitivity for extremely low-light-level detection is still a challenge owing to the limitation of high dark current and low detectivity. Herein, a gate-controlled phototransistor based on 2D SiP2/hexagonal boron nitride (h-BN) was rationally designed and demonstrated ultrahigh sensitivity for the first time. With a back-gate device geometry, the SiP2/h-BN phototransistor exhibits an ultrahigh detectivity of 3.4 × 1013 Jones, which is one of the highest values among 2D material-based photodetectors. In addition, the phototransistor also shows a gate tunable responsivity of ≤43.5 A/W at a gate voltage of 30 V due to the photogating effect. The ultrahigh sensitivity of the SiP2-based phototransistor is attributed to the extremely low dark current suppressed by the phototransistor configuration and the improved photocurrent by using h-BN as a substrate to reduce charge scattering. This work provides a facile strategy for improving the detectivity of photodetectors and validates the great potential of 2D SiP2 phototransistors for ultrasensitive optoelectronic applications.
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Affiliation(s)
- Ziming Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Limei Wei
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Tiange Wu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Lanjing Sun
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Chao Ma
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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6
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Wang J, Liang X, Xie J, Yin X, Chen J, Gu T, Mo Y, Zhao J, Liu S, Yu D, Zhang J, Hou L. Complete Solution-Processed Semitransparent and Flexible Organic Solar Cells: A Success of Polyimide/Ag-Nanowires- and PH1000-Based Electrodes with Plasmonic Enhanced Light Absorption. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12223987. [PMID: 36432273 PMCID: PMC9693524 DOI: 10.3390/nano12223987] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 11/08/2022] [Accepted: 11/10/2022] [Indexed: 05/31/2023]
Abstract
Organic solar cells (OSCs) have been widely studied due to the advantages of easy fabrication, low cost, light weight, good flexibility and sufficient transparency. In this work, flexible and semitransparent OSCs were successfully fabricated with the adoption of both polyimide/silver nanowires (PI/AgNW) and a conducting polymer PEDOT:PSS named PH1000 as the transparent conductive electrodes (TCEs). It is demonstrated that PI/AgNW is more suitable as a cathode rather than an anode in the viewpoint of its work function, photovoltaic performance, and simulations of optical properties. It is also found that the light incidence from PH1000 TCE can produce more plasmonic-enhanced photon absorption than the PI/AgNW electrode does, resulting in more high power conversion efficiency. Moreover, a high light transmittance of 33.8% and a decent efficiency of 3.88% are achieved for the whole all-flexible semitransparent device with only 9% decrease of resistance in PI/AgNW after 3000 bending cycles. This work illustrates that PI/AgNW has great potential and bright prospect in large-area OSC applications in the future.
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Affiliation(s)
- Jing Wang
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Physics Department, Jinan University, Guangzhou 510632, China
| | - Xiangfei Liang
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Physics Department, Jinan University, Guangzhou 510632, China
| | - Jianing Xie
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
| | - Xiaolong Yin
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Physics Department, Jinan University, Guangzhou 510632, China
| | - Jinhao Chen
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Physics Department, Jinan University, Guangzhou 510632, China
| | - Tianfu Gu
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Physics Department, Jinan University, Guangzhou 510632, China
| | - Yueqi Mo
- State Key Laboratory of Luminescent Materials and Devices, College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Jianqing Zhao
- State Key Laboratory of Luminescent Materials and Devices, College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Shumei Liu
- State Key Laboratory of Luminescent Materials and Devices, College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Donghong Yu
- Department of Chemistry and Bioscience, Aalborg University, Fredrik Bajers Vej 7H, DK-9220 Aalborg East, Denmark
- Sino-Danish Center for Education and Research, DK-8000 Aarhus, Denmark
| | - Jibin Zhang
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Physics Department, Jinan University, Guangzhou 510632, China
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lintao Hou
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528000, China
- Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Siyuan Laboratory, Physics Department, Jinan University, Guangzhou 510632, China
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7
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Chen J, Li L, Gong P, Zhang H, Yin S, Li M, Wu L, Gao W, Long M, Shan L, Yan F, Li G. A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe 3. ACS NANO 2022; 16:7745-7754. [PMID: 35499232 DOI: 10.1021/acsnano.1c11628] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
2D material (2DM) based photodetectors with broadband photoresponse are of great value for a vast number of applications such as multiwavelength photodetection, imaging, and night vision. However, compared with traditional photodetectors based on bulk material, the relatively slow speed performance of 2DM based photodetectors hinders their practical applications. Herein, a submicrosecond-response photodetector based on ternary telluride InSiTe3 with trigonal symmetry and layered structure was demonstrated in this study. The InSiTe3 based photodetectors exhibit an ultrafast photoresponse (545-576 ns) and broadband detection capabilities from the ultraviolet (UV) to the near-infrared (NIR) optical communication region (365-1310 nm). Besides, the photodetector presents an outstanding reversible and stable photoresponse in which the response performance remains consistent within 200 000 cycles of switch operation. These significant findings suggest that InSiTe3 can be a promising candidate for constructing fast response broadband 2DM based optoelectronic devices.
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Affiliation(s)
- Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Penglai Gong
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Institute of Life Science and Green Development, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Hanlin Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Shiqi Yin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Ming Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Liangfei Wu
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Wenshuai Gao
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Mingsheng Long
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Lei Shan
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Feng Yan
- Department of Applied Physics, Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P.R. China
| | - Guanghai Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
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8
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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9
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Hathaway E, Chen J, Gonzalez-Rodriguez R, Lin Y, Cui J. Raman study of silicon telluride nanoplates and their degradation. NANOTECHNOLOGY 2022; 33:265703. [PMID: 35263725 DOI: 10.1088/1361-6528/ac5c13] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2021] [Accepted: 03/09/2022] [Indexed: 06/14/2023]
Abstract
Silicon telluride (Si2Te3) has emerged as one of the many contenders for 2D materials ideal for the fabrication of atomically thin devices. Despite the progress which has been made in the electric and optical properties of silicon telluride, much work is still needed to better understand this material. We report here on the Raman study of Si2Te3degradation under both annealing andin situheating with a laser. Both processes caused pristine Si2Te3to degrade into tellurium and silicon oxide in air in the absence of a protective coating. A previously unreported Raman peak at ∼140 cm-1was observed from the degraded samples and is found to be associated with pure tellurium. This peak was previously unresolved with the peak at 144 cm-1for pristine Si2Te3in the literature and has been erroneously assigned as a signature Raman peak of pure Si2Te3, which has caused incorrect interpretations of experimental data. Our study has led to a fundamental understanding of the Raman peaks in Si2Te3, and helps resolve the inconsistent issues in the literature. This study is not only important for fundamental understanding but also vital for material characterization and applications.
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Affiliation(s)
- Evan Hathaway
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
| | - Jiyang Chen
- Department of Physics and Material Science, University of Memphis, Memphis, TN 38152, United States of America
| | | | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
| | - Jingbiao Cui
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
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Zhen W, Zhou X, Weng S, Zhu W, Zhang C. Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn 2S 4 for Optical Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12571-12582. [PMID: 35234462 DOI: 10.1021/acsami.2c00063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer from large dark currents and slow response, which means increased power consumption and reduced performance. Here we report a systematic study of the optoelectronic properties of well-characterized rhombohedral ZnIn2S4 (R-ZIS) nanosheets which exhibit an extremely low dark current (7 pA at 5 V bias). The superior performance represented by a series of parameters surpasses most 2D counterparts. The ultrahigh specific detectivity (1.8 × 1014 Jones), comparably short response time (τrise = 222 μs, τdecay = 158 μs), and compatibility with high-frequency operation (1000 Hz) are particularly prominent. Moreover, a gate-tunable characteristic is observed, which is attributed to photogating and improves the photoresponse by 2 orders of magnitude. Gating technique can effectively modulate the photocurrent-generation mechanism from photoconductive effect to dominant photogating. The combination of ultrahigh sensitivity, ultrafast response, and high gate tunability makes the R-ZIS phototransistor an ideal device for low-energy-consumption and high-frequency optoelectronic applications, which is further demonstrated by its excellent performance in optical neural networks and promising potential in optical deep learning and computing.
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Affiliation(s)
- Weili Zhen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Xi Zhou
- The Interdisciplinary Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shirui Weng
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Wenka Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Changjin Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
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Xu H, Kim T, Han H, Kim MJ, Hur JS, Choi CH, Chang JH, Jeong JK. High-Performance Broadband Phototransistor Based on TeO x/IGTO Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3008-3017. [PMID: 35000384 DOI: 10.1021/acsami.1c18576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ultraviolet to infrared broadband spectral detection capability is a technological challenge for sensing materials being developed for high-performance photodetection. In this work, we stacked 9 nm-thick tellurium oxide (TeOx) and 8 nm-thick InGaSnO (IGTO) into a heterostructure at a low temperature of 150 °C. The superior photoelectric characteristics we achieved benefit from the intrinsic optical absorption range (300-1500 nm) of the hexagonal tellurium (Te) phase in the TeOx film, and photoinduced electrons are driven effectively by band alignment at the TeOx/IGTO interface under illumination. A photosensor based on our optimized heterostructure exhibited a remarkable detectivity of 1.6 × 1013 Jones, a responsivity of 84 A/W, and a photosensitivity of 1 × 105, along with an external quantum efficiency of 222% upon illumination by blue light (450 nm). Simultaneously, modest detection properties (responsivity: ∼31 A/W, detectivity: ∼6 × 1011 Jones) for infrared irradiation at 970 nm demonstrate that this heterostructure can be employed as a broadband phototransistor. Furthermore, its low-temperature processability suggests that our proposed concept might be used to design array optoelectronic devices for wide band detection with high sensitivity, flexibility, and stability.
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Affiliation(s)
- Hongwei Xu
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Taikyu Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - HeeSung Han
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Min Jae Kim
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joon-Hyuk Chang
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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