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Wan J, Zhang J, Liu F, Sa Z, Li P, Wang M, Wang G, Zang Z, Chen F, Yip S, Yang ZX. Toward High-Performance Self-Powered Near-Ultraviolet Photodetection by Constructing a Unipolar Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39049155 DOI: 10.1021/acsami.4c07333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Constructing a unipolar heterojunction is an effective energy band engineering strategy to improve the performance of photoelectric devices, which could suppress dark current and enhance detectivity by modulating the transfer of carriers. In this work, unipolar heterojunctions of Si/PbI2 and GaSb/PbI2 are constructed successfully for high-performance self-powered near-ultraviolet photodetection. Owing to the unique band offset of unipolar heterojunctions, the transport of holes is blocked, and only photogenerated electrons in PbI2 can flow unimpeded under the driving force of the built-in electric field. Thus, the recombination of photogenerated electron-hole pairs is suppressed, contributing to high-performance near-ultraviolet photodetection. The as-fabricated Si/PbI2 self-powered near-ultraviolet photodetector exhibits a low dark current of 10-13 A, a high Ilight/Idark ratio of 104, and fast response times of 26/24 ms, which are much better than those of the PbI2 metal-semiconductor-metal photodetector. Furthermore, the as-fabricated GaSb/PbI2 unipolar heterojunction photodetector also exhibits impressive self-powered near-ultraviolet photodetection behaviors. Evidently, this work shows the potential of unipolar heterojunctions for next-generation Si-based and GaSb-based high-performance photodetection.
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Affiliation(s)
- Junchen Wan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Pengsheng Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Guangcan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zeqi Zang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 8168580, Japan
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Liu F, Zhuang X, Wang M, Qi D, Dong S, Yip S, Yin Y, Zhang J, Sa Z, Song K, He L, Tan Y, Meng Y, Ho JC, Liao L, Chen F, Yang ZX. Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires. Nat Commun 2023; 14:7480. [PMID: 37980407 PMCID: PMC10657406 DOI: 10.1038/s41467-023-43323-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2023] [Accepted: 11/07/2023] [Indexed: 11/20/2023] Open
Abstract
Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.
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Affiliation(s)
- Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - Dongqing Qi
- School of Chemistry and Chemical Engineering, Shandong University, 250100, Jinan, China
| | - Shengpan Dong
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, 210096, Nanjing, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, 816-8580, Fukuoka, Japan
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - Kepeng Song
- School of Chemistry and Chemical Engineering, Shandong University, 250100, Jinan, China.
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, 210096, Nanjing, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, 999077, Hong Kong, China
| | - Johnny C Ho
- Institute for Materials Chemistry and Engineering, Kyushu University, 816-8580, Fukuoka, Japan.
- Department of Materials Science and Engineering, City University of Hong Kong, 999077, Hong Kong, China.
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, 410082, Changsha, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, China.
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Zhuang X, Sa Z, Zhang J, Wang M, Xu M, Liu F, Song K, He T, Chen F, Yang Z. An Amorphous Native Oxide Shell for High Bias-Stress Stability Nanowire Synaptic Transistor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302516. [PMID: 37767942 PMCID: PMC10625101 DOI: 10.1002/advs.202302516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 08/30/2023] [Indexed: 09/29/2023]
Abstract
The inhomogeneous native oxide shells on the surfaces of III-V group semiconductors typically yield inferior and unstable electrical properties metrics, challenging the development of next-generation integrated circuits. Herein, the native GaOx shells are profitably utilized by a simple in-situ thermal annealing process to achieve high-performance GaSb nanowires (NWs) field-effect-transistors (FETs) with excellent bias-stress stability and synaptic behaviors. By an optimal annealing time of 5 min, the as-constructed GaSb NW FET demonstrates excellent stability with a minimal shift of transfer curve (ΔVth ≈ 0.54 V) under a 60 min gate bias, which is far more stable than that of pristine GaSb NW FET (ΔVth ≈ 8.2 V). When the high bias-stress stability NW FET is used as the chargeable-dielectric free synaptic transistor, the typical synaptic behaviors, such as short-term plasticity, long-term plasticity, spike-time-dependent plasticity, and reliable learning stability are demonstrated successfully through the voltage tests. The mobile oxygen ion in the native GaOx shell strongly offsets the trapping states and leads to enhanced bias-stress stability and charge retention capability for synaptic behaviors. This work provides a new way of utilizing the native oxide shell to realize stable FET for chargeable-dielectric free neuromorphic computing systems.
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Affiliation(s)
- Xinming Zhuang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
- School of MicroelectronicsShandong UniversityJinan250100P. R. China
| | - Zixu Sa
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Jie Zhang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Mingxu Wang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Mingsheng Xu
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Fengjing Liu
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Kepeng Song
- School of Chemistry and Chemical EngineeringShandong UniversityJinan250100P. R. China
| | - Tao He
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Feng Chen
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
| | - Zai‐xing Yang
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100P. R. China
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Wang M, Zhuang X, Liu F, Chen Y, Sa Z, Yin Y, Lv Z, Wei H, Song K, Cao B, Yang ZX. New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors. NANO LETTERS 2022; 22:9707-9713. [PMID: 36445059 DOI: 10.1021/acs.nanolett.2c04013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V ± 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 × 10-1 V, a responsivity of 7.86 × 1012 V W-1, and a detectivity of 5.87 × 1013 Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.
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Affiliation(s)
- Mingxu Wang
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Xinming Zhuang
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Fengjing Liu
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Yang Chen
- School of Physics and Physical Engineering, Qufu Normal University, Qufu273165, China
| | - Zixu Sa
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Yanxue Yin
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Zengtao Lv
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Haoming Wei
- School of Physics and Physical Engineering, Qufu Normal University, Qufu273165, China
| | - Kepeng Song
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
| | - Bingqiang Cao
- School of Physics and Physical Engineering, Qufu Normal University, Qufu273165, China
- Materials Research Center for Energy and Photoelectrochemical Conversion, School of Material Science and Engineering, University of Jinan, Jinan250022, China
| | - Zai-Xing Yang
- School of Physics, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China
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Liu D, Chen R, Liu F, Zhang J, Zhuang X, Yin Y, Wang M, Sa Z, Wang P, Sun L, Pang Z, Tan Y, Jia Z, Chen M, Yang ZX. Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensional Layered PbI 2 Nanoplates. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46748-46755. [PMID: 36196627 DOI: 10.1021/acsami.2c13373] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Realizing omnidirectional self-powered photodetectors is central to advancing next-generation portable and smart photodetector systems. However, the traditional omnidirectional photodetector is typically achieved by integrating complex hemispherical microlens on multiple photodetectors, which makes the detection system cumbersome and restricts its application in the portable field. Here, facile and high-performance flexible omnidirectional self-powered photodetectors are achieved by solution-processed two-dimensional (2D) layered PbI2 nanoplates on transparent conducting substrates. Characterization of PbI2 nanoplates microstructural/compositional and their photodetection properties have been systematically characterized. Under the irradiation of a 405 nm laser, the photodetectors exhibit an impressively low dark current of 10-13 A, a high light on/off ratio up to 106, and a fast rise/decay response time of 2/3 ms. Importantly, when light irradiates the photodetector at 5°, it can still maintain high photodetection properties, realizing almost 360° omnidirectional self-powered photodetection. What is more, these self-powered photodetectors exhibit robust omnidirectional photoresponse stability of flexibility even after bending for 1200 cycles. Thus, this work broadens the applicability of 2D layered nanoplates for further extending its applications in advanced optoelectronic devices.
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Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Ruichang Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Peng Wang
- College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Li Sun
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zhitai Jia
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Ming Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
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6
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Zhang K, Ren Z, Cao H, Li L, Wang Y, Zhang W, Li Y, Yang H, Meng Y, Ho JC, Wei Z, Shen G. Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays. ACS NANO 2022; 16:8128-8140. [PMID: 35511070 DOI: 10.1021/acsnano.2c01455] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 102 A/W and an ultrahigh detectivity of 1.10 × 1011 Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.
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Affiliation(s)
- Kai Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
- Institute of Physics, Chinese Academy of Sciences and University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhihui Ren
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelxsectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Huichen Cao
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Lingling Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ying Wang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Wei Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Yubao Li
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Haitao Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - You Meng
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guozhen Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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7
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Liu D, Liu F, Liu Y, Pang Z, Zhuang X, Yin Y, Dong S, He L, Tan Y, Liao L, Chen F, Yang ZX. Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200415. [PMID: 35257494 DOI: 10.1002/smll.202200415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Indexed: 06/14/2023]
Abstract
The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the Ilight /Idark ratio is improved to 103 and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.
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Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yue Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Shengpan Dong
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Longbing He
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University Nanjing, Nanjing, 210096, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University Changsha, Changsha, 410082, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University Jinan, Jinan, 250100, China
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8
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Dubrovskii VG. Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1064. [PMID: 35407180 PMCID: PMC9000702 DOI: 10.3390/nano12071064] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2022] [Revised: 03/21/2022] [Accepted: 03/22/2022] [Indexed: 02/04/2023]
Abstract
A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires. I consider an adsorbing substrate on which the arriving growth species (group III adatoms for III-V nanowires) may diffuse to the nanowire base and subsequently to the top without desorption. Analytical solution for the nanowire length evolution at a constant radius shows that the shadowing of the substrate surface is efficient and affects the growth kinetics from the very beginning of growth in dense enough ensembles of nanowires. The model fits quite well the kinetic data on different Au-catalyzed and self-catalyzed III-V nanowires. This approach should work equally well for vapor-liquid-solid and catalyst-free nanowires grown by molecular beam epitaxy and related deposition techniques on unpatterned or masked substrates.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
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9
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Dubrovskii VG. Theory of MBE Growth of Nanowires on Reflecting Substrates. NANOMATERIALS 2022; 12:nano12020253. [PMID: 35055270 PMCID: PMC8781942 DOI: 10.3390/nano12020253] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 01/09/2022] [Accepted: 01/10/2022] [Indexed: 02/01/2023]
Abstract
Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor-liquid-solid and catalyst-free III-V NWs.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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