Emerging Single-Photon Detectors Based on Low-Dimensional Materials

Optically induced quantum transitions in direct probed mesoscopic NbSe2 for prototypical bolometers

Superconducting transition-edge sensors (TES) have emerged as fascinating devices to detect broadband electromagnetic radiation with low thermal noise. The advent of metallic transition metal dichalcogenides, such as NbSe2, has also created an impetus to understand their low-temperature properties, including superconductivity. Interestingly, NbSe2-based sensor within the TES framework remains unexplored. In this work, direct-probed superconducting NbSe2 absorbers led to a proof-of-concept demonstration for the transduction of incoming light to heat, where a thermodynamic superconducting phase transition in NbSe2 was evident to switch it to the normal state, when biased below its superconducting transition temperature. A wavelength-dependent response of its optical absorption properties was observed, based on the incident optical excitation source used. Furthermore, extensive optical characterization studies were conducted using Raman spectroscopy, where the in-plane and out-of-plane thermal conductivity was empirically determined. Our results open possibilities for the use of NbSe2 in superconducting radiation detectors, including in a TES framework.

Design of an Electronic Interface for Single-Photon Avalanche Diodes

Single-photon avalanche diodes (SPADs) belong to a family of avalanche photodiodes (APDs) with single-photon detection capability that operate above the breakdown voltage (i.e., Geiger mode). Design and technology constraints, such as dark current, photon detection probability, and power dissipation, impose inherent device limitations on avalanche photodiodes. Moreover, after the detection of a photon, SPADs require dead time for avalanche quenching and recharge before they can detect another photon. The reduction in dead time results in higher efficiency for photon detection in high-frequency applications. In this work, an electronic interface, based on the pole-zero compensation technique for reducing dead time, was investigated. A nanosecond pulse generator was designed and fabricated to generate pulses of comparable voltage to an avalanche transistor. The quenching time constant (τq) is not affected by the compensation capacitance variation, while an increase of about 30% in the τq is related to the properties of the specific op-amp used in the design. Conversely, the recovery time was observed to be strongly influenced by the compensation capacitance. Reductions in the recovery time, from 927.3 ns down to 57.6 ns and 9.8 ns, were observed when varying the compensation capacitance in the range of 5-0.1 pF. The experimental results from an SPAD combined with an electronic interface based on an avalanche transistor are in strong accordance, providing similar output pulses to those of an illuminated SPAD.

High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure

As a two-dimensional (2D) material, palladium diselenide (PdSe2) has attracted extensive research attention due to its unique asymmetric crystal structure and extraordinary optoelectronic properties, showing great potential in electronic, optoelectronic, and other application fields. Thinner PdSe2 exhibits semiconductor properties, while the photoresponse of the photodetectors based on this film is weaker. Although increasing the thickness of the PdSe2 film can improve the photoresponse, thicker PdSe2 exhibits metallic-like properties, which is not conducive to the formation of the heterojunction. In this work, a PdSe2 2D material with a quantum island structure is prepared by a simple thermal-assisted conversion method. A new type of photodetector with a PdSe2/n--Si/n+-Si vertical PIN-like structure is innovatively proposed. Broad spectral absorption from 532 to 2200 nm and a high rectification ratio (106) of the device are achieved. The introduced n--Si layer concentrates the electric field in the depletion region, thereby shortening the transit time and accelerating the separation and collection of the carriers, resulting in the enhancement of the responsivity and 3 dB frequency compared to the traditional device with a PN structure. A recorded highest 3 dB frequency of ∼25 kHz is achieved for the PdSe2 2D-3D PIN-like device.

Microwave-assisted synthesis of polyoxometalate-Dy2O3 monolayer nanosheets and nanotubes

Two-dimensional (2D) materials have shown unique chemical and physical properties; however, their synthesis is highly dependent on the layered structure of building blocks. Herein, we developed monolayer Dy2O3-phosphomolybdic acid (PMA) nanosheets and nanotubes based on microwave synthesis. Microwave-assisted synthesis with high-energy input gives a faster and dynamically driven growth of nanomaterials, resulting in high-purity nanostructures with a narrow size distribution. The reaction times of the nanosheets and nanotubes under microwave synthesis are significantly reduced compared with oven-synthesis. Dy2O3-PMA nanosheets and nanotubes exhibit enhanced activity and stability in photoconductance, with higher sensitivities (0.308 μA cm-2 for nanosheets and 0.271 μA cm-2 for nanotubes) compared to the individual PMA (0.12 μA cm-2) and Dy2O3 (0.025 μA cm-2) building blocks. This work demonstrates the promising application potential of microwave-synthesized 2D heterostructures in superconductors and photoelectronic devices.

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing. Without excessive computational effort, we could predict a suite of key device performance metrics, including breakdown voltage, dark/light avalanche built-up time, photon detection efficiency, dark count rate, and the deterministic part of timing jitter due to device structures. Implementing the proposed workflow onto a single InP nanowire and comparing it to the extensively studied planar devices and superconducting nanowire SPDs, we showed the great potential of nanowire avalanche SPD to outperform their planar counterparts and obtain as superior performance as superconducting nanowires, i.e. achieve a high photon detection efficiency of 70% with a dark count rate less than 20 Hz at non-cryogenic temperature. The proposed workflow is not limited to single-nanowire or nanowire-based device modeling and can be readily extended to more complicated two-/three dimensional structures.

A multifunctional optoelectronic device based on 2D material with wide bandgap

Low-dimensional materials exhibit unique quantum confinement effects and morphologies as a result of their nanoscale size in one or more dimensions, making them exhibit distinctive physical properties compared to bulk counterparts. Among all low-dimensional materials, due to their atomic level thickness, two-dimensional materials possess extremely large shape anisotropy and consequently are speculated to have large optically anisotropic absorption. In this work, we demonstrate an optoelectronic device based on the combination of two-dimensional material and carbon dot with wide bandgap. High-efficient luminescence of carbon dot and extremely large shape anisotropy (>1500) of two-dimensional material with the wide bandgap of >4 eV cooperatively endow the optoelectronic device with multi-functions of optically anisotropic blue-light emission, visible light modulation, wavelength-dependent ultraviolet-light detection as well as blue fluorescent film assemble. This research opens new avenues for constructing multi-function-integrated optoelectronic devices via the combination of nanomaterials with different dimensions.

Graphene nanowalls in photodetectors

Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.

Integrated metasurfaces for re-envisioning a near-future disruptive optical platform

Metasurfaces have been continuously garnering attention in both scientific and industrial fields, owing to their unprecedented wavefront manipulation capabilities using arranged subwavelength artificial structures. To date, research has mainly focused on the full control of electromagnetic characteristics, including polarization, phase, amplitude, and even frequencies. Consequently, versatile possibilities of electromagnetic wave control have been achieved, yielding practical optical components such as metalenses, beam-steerers, metaholograms, and sensors. Current research is now focused on integrating the aforementioned metasurfaces with other standard optical components (e.g., light-emitting diodes, charged-coupled devices, micro-electro-mechanical systems, liquid crystals, heaters, refractive optical elements, planar waveguides, optical fibers, etc.) for commercialization with miniaturization trends of optical devices. Herein, this review describes and classifies metasurface-integrated optical components, and subsequently discusses their promising applications with metasurface-integrated optical platforms including those of augmented/virtual reality, light detection and ranging, and sensors. In conclusion, this review presents several challenges and prospects that are prevalent in the field in order to accelerate the commercialization of metasurfaces-integrated optical platforms.

Gate-Tunable van der Waals Photodiodes with an Ultrahigh Peak-to-Valley Current Ratio

Photodetectors and imagers based on 2D layered materials are currently subject to a rapidly expanding application space, with an increasing demand for cost-effective and lightweight devices. However, the underlying carrier transport across the 2D homo- or heterojunction channel driven by the external electric field, like a gate or drain bias, is still unclear. Here, a visible-near infrared photodetector based on van der Waals stacked molybdenum telluride (MoTe₂ ) and black phosphorus (BP) is reported. The type-I and type-II band alignment can be tuned by the gate and drain voltage combined showing a dynamic modulation of the conduction polarity and negative differential transconductance. The heterojunction devices show a good photoresponse to light illumination ranging from 520-2000 nm. The built-in potential at the MoTe₂ /BP interface can efficiently separate photoexcited electron-hole pairs with a high responsivity of 290 mA W^-1 , an external quantum efficiency of 70%, and a fast photoresponse of 78 µs under zero bias.

An infrared photothermoelectric detector enabled by MXene and PEDOT:PSS composite for noncontact fingertip tracking

Photothermoelectric (PTE) detectors functioning on the infrared spectrum show much potential for use in many fields, such as energy harvesting, nondestructive monitoring, and imaging fields. Recent advances in low-dimensional and semiconductor materials research have facilitated new opportunities for PTE detectors to be applied in material and structural design. However, these materials applied in PTE detectors face some challenges, such as unstable properties, high infrared reflection, and miniaturization issues. Herein, we report our fabrication of scalable bias-free PTE detectors based on Ti₃C₂ and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) composites and characterization of their composite morphology and broadband photoresponse. We also discuss various PTE engineering strategies, including substrate choices, electrode types, deposition methods, and vacuum conditions. Furthermore, we simulate metamaterials using different materials and hole sizes and fabricated a gold metamaterial with a bottom-up configuration by simultaneously combining MXene and polymer, which achieved an infrared photoresponse enhancement. Finally, we demonstrate a fingertip gesture response using the metamaterial-integrated PTE detector. This research proposes numerous implications of MXene and its related composites for wearable devices and Internet of Things (IoT) applications, such as the continuous biomedical tracking of human health conditions.

Nanomaterials for Quantum Information Science and Engineering

Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.