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Rabchinskii MK, Besedina NA, Brzhezinskaya M, Stolyarova DY, Ryzhkov SA, Saveliev SD, Antonov GA, Baidakova MV, Pavlov SI, Kirilenko DA, Shvidchenko AV, Cherviakova PD, Brunkov PN. Graphene Amination towards Its Grafting by Antibodies for Biosensing Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111730. [PMID: 37299631 DOI: 10.3390/nano13111730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Revised: 05/16/2023] [Accepted: 05/23/2023] [Indexed: 06/12/2023]
Abstract
The facile synthesis of biografted 2D derivatives complemented by a nuanced understanding of their properties are keystones for advancements in biosensing technologies. Herein, we thoroughly examine the feasibility of aminated graphene as a platform for the covalent conjugation of monoclonal antibodies towards human IgG immunoglobulins. Applying core-level spectroscopy methods, namely X-ray photoelectron and absorption spectroscopies, we delve into the chemistry and its effect on the electronic structure of the aminated graphene prior to and after the immobilization of monoclonal antibodies. Furthermore, the alterations in the morphology of the graphene layers upon the applied derivatization protocols are assessed by electron microscopy techniques. Chemiresistive biosensors composed of the aerosol-deposited layers of the aminated graphene with the conjugated antibodies are fabricated and tested, demonstrating a selective response towards IgM immunoglobulins with a limit of detection as low as 10 pg/mL. Taken together, these findings advance and outline graphene derivatives' application in biosensing as well as hint at the features of the alterations of graphene morphology and physics upon its functionalization and further covalent grafting by biomolecules.
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Affiliation(s)
| | - Nadezhda A Besedina
- Department of Physics, Alferov University, 8/3 Khlopina Street, Saint Petersburg 194021, Russia
| | - Maria Brzhezinskaya
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Dina Yu Stolyarova
- NRC "Kurchatov Institute", Akademika Kurchatova pl. 1, Moscow 123182, Russia
| | - Sergei A Ryzhkov
- Ioffe Institute, Politekhnicheskaya St. 26, Saint Petersburg 194021, Russia
| | | | - Grigorii A Antonov
- Ioffe Institute, Politekhnicheskaya St. 26, Saint Petersburg 194021, Russia
| | - Marina V Baidakova
- Ioffe Institute, Politekhnicheskaya St. 26, Saint Petersburg 194021, Russia
| | - Sergei I Pavlov
- Ioffe Institute, Politekhnicheskaya St. 26, Saint Petersburg 194021, Russia
| | - Demid A Kirilenko
- Ioffe Institute, Politekhnicheskaya St. 26, Saint Petersburg 194021, Russia
| | | | | | - Pavel N Brunkov
- Ioffe Institute, Politekhnicheskaya St. 26, Saint Petersburg 194021, Russia
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Sobaszek M, Brzhezinskaya M, Olejnik A, Mortet V, Alam M, Sawczak M, Ficek M, Gazda M, Weiss Z, Bogdanowicz R. Highly Occupied Surface States at Deuterium-Grown Boron-Doped Diamond Interfaces for Efficient Photoelectrochemistry. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2208265. [PMID: 36949366 DOI: 10.1002/smll.202208265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 03/03/2023] [Indexed: 06/18/2023]
Abstract
Polycrystalline boron-doped diamond is a promising material for high-power aqueous electrochemical applications in bioanalytics, catalysis, and energy storage. The chemical vapor deposition (CVD) process of diamond formation and doping is totally diversified by using high kinetic energies of deuterium substituting habitually applied hydrogen. The high concentration of deuterium in plasma induces atomic arrangements and steric hindrance during synthesis reactions, which in consequence leads to a preferential (111) texture and more effective boron incorporation into the lattice, reaching a one order of magnitude higher density of charge carriers. This provides the surface reconstruction impacting surficial populations of CC dimers, CH, CO groups, and COOH termination along with enhanced kinetics of their abstraction, as revealed by high-resolution core-level spectroscopies. A series of local densities of states were computed, showing a rich set of highly occupied and localized surface states for samples deposited in deuterium, negating the connotations of band bending. The introduction of enhanced incorporation of boron into (111) facet of diamond leads to the manifestation of surface electronic states below the Fermi level and above the bulk valence band edge. This unique electronic band structure affects the charge transfer kinetics, electron affinity, and diffusion field geometry critical for efficient electrolysis, electrocatalysis, and photoelectrochemistry.
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Affiliation(s)
- Michał Sobaszek
- Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland
| | - Maria Brzhezinskaya
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109, Berlin, Germany
| | - Adrian Olejnik
- Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland
| | - Vincent Mortet
- Czech Technical University in Prague, Faculty of Electrical Engineering, Technická 1902/2, Prague 6, 166 27, Czech Republic
| | - Mahebub Alam
- Czech Technical University in Prague, Faculty of Electrical Engineering, Technická 1902/2, Prague 6, 166 27, Czech Republic
| | - Mirosław Sawczak
- The Szewalski Institute of Fluid-Flow Machinery, Polish Academy of Sciences, Fiszera 14, Gdansk, 80-231, Poland
| | - Mateusz Ficek
- Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland
| | - Maria Gazda
- Department of Solid State Physics, Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, Narutowicza 11/12, Gdańsk, 80-233, Poland
| | - Zdeněk Weiss
- CSc, FZU - Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Praha 8, 182 21, Czech Republic
| | - Robert Bogdanowicz
- Gdańsk University of Technology, Faculty of Electronics, Telecommunications and Informatics, Department of Metrology and Optoelectronics, 11/12 Narutowicza Str., Gdansk, 80-233, Poland
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Rabchinskii MK, Shnitov VV, Brzhezinskaya M, Baidakova MV, Stolyarova DY, Ryzhkov SA, Saveliev SD, Shvidchenko AV, Nefedov DY, Antonenko AO, Pavlov SV, Kislenko VA, Kislenko SA, Brunkov PN. Manifesting Epoxide and Hydroxyl Groups in XPS Spectra and Valence Band of Graphene Derivatives. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:nano13010023. [PMID: 36615934 PMCID: PMC9823558 DOI: 10.3390/nano13010023] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2022] [Revised: 12/13/2022] [Accepted: 12/19/2022] [Indexed: 06/12/2023]
Abstract
The derivatization of graphene to engineer its band structure is a subject of significant attention nowadays, extending the frames of graphene material applications in the fields of catalysis, sensing, and energy harvesting. Yet, the accurate identification of a certain group and its effect on graphene's electronic structure is an intricate question. Herein, we propose the advanced fingerprinting of the epoxide and hydroxyl groups on the graphene layers via core-level methods and reveal the modification of their valence band (VB) upon the introduction of these oxygen functionalities. The distinctive contribution of epoxide and hydroxyl groups to the C 1s X-ray photoelectron spectra was indicated experimentally, allowing the quantitative characterization of each group, not just their sum. The appearance of a set of localized states in graphene's VB related to the molecular orbitals of the introduced functionalities was signified both experimentally and theoretically. Applying the density functional theory calculations, the impact of the localized states corresponding to the molecular orbitals of the hydroxyl and epoxide groups was decomposed. Altogether, these findings unveiled the particular contribution of the epoxide and hydroxyl groups to the core-level spectra and band structure of graphene derivatives, advancing graphene functionalization as a tool to engineer its physical properties.
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Affiliation(s)
| | | | - Maria Brzhezinskaya
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | | | - Dina Yu. Stolyarova
- NRC “Kurchatov Institute”, Akademika Kurchatova pl. 1, 123182 Moscow, Russia
| | - Sergey A. Ryzhkov
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
| | | | | | - Denis Yu. Nefedov
- St. Petersburg State University, Universitetskaya nab. 7–9, 199034 St. Petersburg, Russia
| | | | - Sergey V. Pavlov
- Joint Institute for High Temperatures of RAS, Izhorskaya St. 13/2, 125412 Moscow, Russia
| | - Vitaliy A. Kislenko
- Joint Institute for High Temperatures of RAS, Izhorskaya St. 13/2, 125412 Moscow, Russia
- Skolkovo Institute of Science and Technology (Skoltech), Bolshoy Boulevard 30, bld. 1, 121205 Moscow, Russia
| | - Sergey A. Kislenko
- Joint Institute for High Temperatures of RAS, Izhorskaya St. 13/2, 125412 Moscow, Russia
| | - Pavel N. Brunkov
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia
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Tailoring the Properties of Ni(111)/Graphone Interfaces by Intercalation of Al and Na: A DFT Study. Mol Vis 2022. [DOI: 10.3390/c8040062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Open
Abstract
With the incredible discovery of graphene (Gr), all of the properties studied to date suggest that it has promising applications in the development of semiconductor, spintronic, insulating, and polymer materials. However, efforts are still underway to fully understand the nature of metal–graphone(GrH) interaction in order to offer better scope for tuning the electronic and magnetic properties, which can be performed by intercalation of atoms via metal support on graphene. We chose metal atoms belonging to the s and p blocks, namely Na and Al, respectively, as the intercalating atoms. Herein, the maximum coverage of a monolayer of Na and Al was comparatively studied on a Ni(111) surface. Significant changes in the magnetic and electronic properties at the Ni(111)/graphone interface were observed upon intercalation. Of the two intercalating metal atoms, Na proved to be more effective, such that the magnetic properties of the surface Ni were only slightly decreased, and the graphone also showed better magnetic properties than in the absence of Na.
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Rabchinskii MK, Sysoev VV, Ryzhkov SA, Eliseyev IA, Stolyarova DY, Antonov GA, Struchkov NS, Brzhezinskaya M, Kirilenko DA, Pavlov SI, Palenov ME, Mishin MV, Kvashenkina OE, Gabdullin PG, Varezhnikov AS, Solomatin MA, Brunkov PN. A Blueprint for the Synthesis and Characterization of Thiolated Graphene. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 12:45. [PMID: 35009995 PMCID: PMC8746421 DOI: 10.3390/nano12010045] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2021] [Revised: 12/14/2021] [Accepted: 12/22/2021] [Indexed: 06/12/2023]
Abstract
Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials.
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Affiliation(s)
- Maxim K. Rabchinskii
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; (S.A.R.); (I.A.E.); (G.A.A.); (D.A.K.); (S.I.P.); (P.N.B.)
| | - Victor V. Sysoev
- Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia; (V.V.S.); (A.S.V.); (M.A.S.)
| | - Sergei A. Ryzhkov
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; (S.A.R.); (I.A.E.); (G.A.A.); (D.A.K.); (S.I.P.); (P.N.B.)
| | - Ilya A. Eliseyev
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; (S.A.R.); (I.A.E.); (G.A.A.); (D.A.K.); (S.I.P.); (P.N.B.)
| | - Dina Yu. Stolyarova
- National Research Centre “Kurchatov Institute”, Akademika Kurchatova pl. 1, 123182 Moscow, Russia;
| | - Grigorii A. Antonov
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; (S.A.R.); (I.A.E.); (G.A.A.); (D.A.K.); (S.I.P.); (P.N.B.)
| | - Nikolai S. Struchkov
- Center for Probe Microscopy and Nanotechnology, National Research University of Electronic Technology, Bld. 1, Shokin Square, 124498 Moscow, Russia;
| | - Maria Brzhezinskaya
- Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany;
| | - Demid A. Kirilenko
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; (S.A.R.); (I.A.E.); (G.A.A.); (D.A.K.); (S.I.P.); (P.N.B.)
| | - Sergei I. Pavlov
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; (S.A.R.); (I.A.E.); (G.A.A.); (D.A.K.); (S.I.P.); (P.N.B.)
| | - Mihail E. Palenov
- Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia; (M.E.P.); (M.V.M.); (O.E.K.); (P.G.G.)
| | - Maxim V. Mishin
- Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia; (M.E.P.); (M.V.M.); (O.E.K.); (P.G.G.)
| | - Olga E. Kvashenkina
- Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia; (M.E.P.); (M.V.M.); (O.E.K.); (P.G.G.)
| | - Pavel G. Gabdullin
- Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University (SPbPU), Polytechnicheskaya 29, 195251 Saint Petersburg, Russia; (M.E.P.); (M.V.M.); (O.E.K.); (P.G.G.)
| | - Alexey S. Varezhnikov
- Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia; (V.V.S.); (A.S.V.); (M.A.S.)
| | - Maksim A. Solomatin
- Department of Physics, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya St., 410054 Saratov, Russia; (V.V.S.); (A.S.V.); (M.A.S.)
| | - Pavel N. Brunkov
- Ioffe Institute, Politekhnicheskaya St. 26, 194021 Saint Petersburg, Russia; (S.A.R.); (I.A.E.); (G.A.A.); (D.A.K.); (S.I.P.); (P.N.B.)
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