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Liu S, Wu Z, He Z, Chen W, Zhong X, Guo B, Liu S, Duan H, Guo Y, Zeng J, Liu G. Low-Power Perovskite Neuromorphic Synapse with Enhanced Photon Efficiency for Directional Motion Perception. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22303-22311. [PMID: 38626428 DOI: 10.1021/acsami.4c04398] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
The advancement of artificial intelligent vision systems heavily relies on the development of fast and accurate optical imaging detection, identification, and tracking. Framed by restricted response speeds and low computational efficiency, traditional optoelectronic information devices are facing challenges in real-time optical imaging tasks and their ability to efficiently process complex visual data. To address the limitations of current optoelectronic information devices, this study introduces a novel photomemristor utilizing halide perovskite thin films. The fabrication process involves adjusting the iodide proportion to enhance the quality of the halide perovskite films and minimize the dark current. The photomemristor exhibits a high external quantum efficiency of over 85%, which leads to a low energy consumption of 0.6 nJ. The spike timing-dependent plasticity characteristics of the device are leveraged to construct a spiking neural network and achieve a 99.1% accuracy rate of directional perception for moving objects. The notable results offer a promising hardware solution for efficient optoneuromorphic and edge computing applications.
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Affiliation(s)
- Sixian Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Zhixin Wu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Zhilong He
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Weilin Chen
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Xiaolong Zhong
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Bingjie Guo
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Shuzhi Liu
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Hongxiao Duan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Yanbo Guo
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Jianmin Zeng
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Gang Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
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Huo S, Zhang S, Wu Q, Zhang X. Feature-Assisted Machine Learning for Predicting Band Gaps of Binary Semiconductors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:445. [PMID: 38470776 DOI: 10.3390/nano14050445] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Revised: 02/23/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
The band gap is a key parameter in semiconductor materials that is essential for advancing optoelectronic device development. Accurately predicting band gaps of materials at low cost is a significant challenge in materials science. Although many machine learning (ML) models for band gap prediction already exist, they often suffer from low interpretability and lack theoretical support from a physical perspective. In this study, we address these challenges by using a combination of traditional ML algorithms and the 'white-box' sure independence screening and sparsifying operator (SISSO) approach. Specifically, we enhance the interpretability and accuracy of band gap predictions for binary semiconductors by integrating the importance rankings of support vector regression (SVR), random forests (RF), and gradient boosting decision trees (GBDT) with SISSO models. Our model uses only the intrinsic features of the constituent elements and their band gaps calculated using the Perdew-Burke-Ernzerhof method, significantly reducing computational demands. We have applied our model to predict the band gaps of 1208 theoretically stable binary compounds. Importantly, the model highlights the critical role of electronegativity in determining material band gaps. This insight not only enriches our understanding of the physical principles underlying band gap prediction but also underscores the potential of our approach in guiding the synthesis of new and valuable semiconductor materials.
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Affiliation(s)
- Sitong Huo
- Institute of Information Photonics Technology, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
| | - Shuqing Zhang
- Institute of Information Photonics Technology, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
| | - Qilin Wu
- Institute of Information Photonics Technology, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
| | - Xinping Zhang
- Institute of Information Photonics Technology, School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
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Liu P, Wen H, Ren L, Shi L, Zhang X. χ (2) nonlinear photonics in integrated microresonators. FRONTIERS OF OPTOELECTRONICS 2023; 16:18. [PMID: 37460874 DOI: 10.1007/s12200-023-00073-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 05/22/2023] [Indexed: 07/20/2023]
Abstract
Second-order (χ(2)) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ(2) response due to their centrosymmetric structures. A variety of novel material platforms possessing χ(2) nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ(2) nonlinear effects are introduced. Afterward, we highlight the commonly used χ(2) nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ(2) nonlinearity in the field of integrated microcavity photonics.
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Affiliation(s)
- Pengfei Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Linhao Ren
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lei Shi
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Optics Valley Laboratory, Wuhan, 430074, China.
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
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Fang J, Yang W, Zhang X, Tian A, Lu S, Liu J, Yang H. The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1730. [PMID: 36837358 PMCID: PMC10004518 DOI: 10.3390/ma16041730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 02/07/2023] [Accepted: 02/17/2023] [Indexed: 06/18/2023]
Abstract
Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic duty cycling on the morphology, crystalline quality, Mg doping concentration, and electrical properties of GaN:Mg films grown by MME. When the metal shutter duty cycling is 20 s open/10 s close, the sample has smooth surface with clear steps even with Mg doping concentration higher than 1 × 1020 cm-3. The RMS roughness is about 0.5 nm. The FWHM of (002) XRD rocking curve is 230 arcsec and the FWHM of (102) XRD rocking curve is 260 arcsec. As result, a hole concentration of 5 × 1018 cm-3 and a resistivity of 1.5 Ω·cm have been obtained. The hole concentration increases due to the incorporation of surface accumulated Mg dopants into suitable Ga substitutional sites with minimal formation of compensatory defects.
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Affiliation(s)
- Jun Fang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Wenxian Yang
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Xue Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Aiqin Tian
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Shulong Lu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Jianping Liu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Hui Yang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching. Sci Rep 2022; 12:22434. [PMID: 36575216 PMCID: PMC9794686 DOI: 10.1038/s41598-022-25712-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Accepted: 12/05/2022] [Indexed: 12/29/2022] Open
Abstract
In this paper, we reported on wafer-scale nanoporous (NP) AlGaN-based deep ultraviolet (DUV) distributed Bragg reflectors (DBRs) with 95% reflectivity at 280 nm, using epitaxial periodically stacked n-Al0.62Ga0.38N/u-Al0.62Ga0.38N structures grown on AlN/sapphire templates via metal-organic chemical vapor deposition (MOCVD). The DBRs were fabricated by a simple one-step selective wet etching in heated KOH aqueous solution. To study the influence of the temperature of KOH electrolyte on the nanopores formation, the amount of charge consumed during etching process was counted, and the surface and cross-sectional morphology of DBRs were characterized by Scanning electron microscopy (SEM) and atomic force microscopy (AFM). As the electrolyte temperature increased, the nanopores became larger while the amount of charge reduced, which revealed that the etching process was a combination of electrochemical and chemical etching. The triangular nanopores and hexagonal pits further confirmed the chemical etching processes. Our work demonstrated a simple wet etching to fabricate high reflective DBRs, which would be useful for AlGaN based DUV devices with microcavity structures.
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Alwadai N, Saleman N, Elqahtani ZM, Khan SUD, Majid A. Photonics with Gallium Nitride Nanowires. MATERIALS 2022; 15:ma15134449. [PMID: 35806573 PMCID: PMC9267457 DOI: 10.3390/ma15134449] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/21/2022] [Revised: 06/15/2022] [Accepted: 06/21/2022] [Indexed: 11/16/2022]
Abstract
The surface plasmon resonance in low-dimensional semiconducting materials is a source of valuable scientific phenomenon which opens widespread prospects for novel applications. A systematic study to shed light on the propagation of plasmons at the interface of GaN nanowire is reported. A comprehensive analysis of the interaction of light with GaN nanowires and the propagation of plasmons is carried out to uncover further potentials of the material. The results obtained on the basis of calculations designate the interaction of light with nanowires, which produced plasmons at the interface that propagate along the designed geometry starting from the center of the nanowire towards its periphery, having more flux density at the center of the nanowire. The wavelength of light does not affect the propagation of plasmons but the flux density of plasmons appeared to increase with the wavelength. Similarly, an increment in the flux density of plasmons occurs even in the case of coupled and uncoupled nanowires with wavelength, but more increment occurs in the case of coupling. Further, it was found that an increase in the number of nanowires increases the flux density of plasmons at all wavelengths irrespective of uniformity in the propagation of plasmons. The findings point to the possibility of tuning the plasmonics by using a suitable number of coupled nanowires in assembly.
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Affiliation(s)
- Norah Alwadai
- Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia; (N.A.); (Z.M.E.)
| | - Nigza Saleman
- Department of Physics, Hafiz Hayat Campus, University of Gujrat, Gujrat 50700, Pakistan; (N.S.); (A.M.)
| | - Zainab Mufarreh Elqahtani
- Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia; (N.A.); (Z.M.E.)
| | - Salah Ud-Din Khan
- Sustainable Energy Technologies Center, College of Engineering, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia
- Correspondence:
| | - Abdul Majid
- Department of Physics, Hafiz Hayat Campus, University of Gujrat, Gujrat 50700, Pakistan; (N.S.); (A.M.)
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