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Farhad SFU, Tanvir NI, Bitu MNA, Hossain E, Mamun MA, Quddus MS, Alam MS, Moniruzzaman M, Nandigana P, Panda SK. Conformal zinc sulfide coating of vertically aligned ZnO nanorods by two-step hydrothermal synthesis on wide bandgap seed layers for lead-free perovskite solar cells. NANOTECHNOLOGY 2024; 35:385704. [PMID: 38838651 DOI: 10.1088/1361-6528/ad544a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Accepted: 06/05/2024] [Indexed: 06/07/2024]
Abstract
Vertically aligned ZnO nanorods (NRs) were grown hydrothermally on the wide bandgap (∼3.86 - 4.04 eV) seed layers (SLs) of grain size ∼162 ± 35 nm, prepared using ball-milled derived ZnO powder. The synthesized ZnO NRs were further decorated with ZnS nanocrystals to achieve a ZnO NR-ZnS core-shell (CS)-like nano-scaffolds by a subsequent hydrothermal synthesis at 70 °C for 1 h. UV-Vis-NIR spectroscopy, x-ray diffractometry (XRD), Raman spectroscopy and Field emission scanning electron microscopy (FESEM) coupled with Energy dispersive x-ray spectroscopy (EDX) analyses confirmed the formation of ZnS atop the vertically aligned ZnO NR arrays of ∼1.79 ± 0.17µm length and ∼165 ± 27 nm diameter. Transmission electron microscopy (TEM)/EDX analyses revealed that vertically aligned ZnO NRs (core dia. ∼181 ± 12 nm) arrays are conformally coated by an ultrathin ZnS (∼25 ± 7 nm) shell layer with a preferential ZnS{111}/ZnO{10-10}-like partial epitaxy. The ZnO NRs exhibited a sharp band edge near ∼384 nm having optical bandgap energy (Eg) of ∼3.23 eV. However, the ZnO NR-ZnS CS exhibited double absorption bands atEg∼ 3.20 eV (ZnO-core) andEg∼ 3.78 eV (ZnS-shell). The ZnS{111}/ZnO{10-10}-nano-scaffolds could be utilized to facilitate the enhanced absorption of UV photons as well as the radial junction formation between the Pb-free perovskite absorber and ZnS/ZnO NRs layers.
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Affiliation(s)
- Syed Farid Uddin Farhad
- Energy Conversion and Storage Research (ECSR), Industrial Physics Division (IPD), BCSIR Dhaka Laboratories, Dhaka 1205, Bangladesh
- Central Analytical and Research Facilities (CARF), BCSIR, Dhaka 1205, Bangladesh
- Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, Bangladesh
| | - Nazmul Islam Tanvir
- Energy Conversion and Storage Research (ECSR), Industrial Physics Division (IPD), BCSIR Dhaka Laboratories, Dhaka 1205, Bangladesh
- Central Analytical and Research Facilities (CARF), BCSIR, Dhaka 1205, Bangladesh
- Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, Bangladesh
| | - Md Nur Amin Bitu
- Energy Conversion and Storage Research (ECSR), Industrial Physics Division (IPD), BCSIR Dhaka Laboratories, Dhaka 1205, Bangladesh
- Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, Bangladesh
| | - Elius Hossain
- Energy Conversion and Storage Research (ECSR), Industrial Physics Division (IPD), BCSIR Dhaka Laboratories, Dhaka 1205, Bangladesh
| | - Md Al Mamun
- Atomic Energy Center, Bangladesh Atomic Energy Commission (BAEC), Dhaka 1000, Bangladesh
| | - Md Saiful Quddus
- Central Analytical and Research Facilities (CARF), BCSIR, Dhaka 1205, Bangladesh
- Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, Bangladesh
| | - Md Shaha Alam
- Central Analytical and Research Facilities (CARF), BCSIR, Dhaka 1205, Bangladesh
- Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, Bangladesh
| | - Mohammad Moniruzzaman
- Central Analytical and Research Facilities (CARF), BCSIR, Dhaka 1205, Bangladesh
- Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka 1205, Bangladesh
| | - Pardhasaradhi Nandigana
- EMF Division, CSIR-Central Electrochemical Research Institute, Karaikudi, Tamil Nadu 630003, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Subhendu K Panda
- EMF Division, CSIR-Central Electrochemical Research Institute, Karaikudi, Tamil Nadu 630003, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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Zhao J, Man Z, Wang S, Hao C, Yu Z, Li X, Tang A. Enhanced performance of quantum dot light-emitting diodes enabled by zirconium doped SnO 2 as electron transport layers. OPTICS LETTERS 2024; 49:1896-1899. [PMID: 38621033 DOI: 10.1364/ol.521324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Accepted: 03/13/2024] [Indexed: 04/17/2024]
Abstract
Next-generation display and lighting based on quantum dot light-emitting diodes (QLEDs) require a balanced electron injection of electron transport layers (ETLs). However, classical ZnO nanoparticles (NPs) as ETLs face inherent defects such as excessive electron injection and positive aging effects, urgently requiring the development of new types of ETL materials. Here, we show that high stability SnO2 NPs as ETL can significantly improve the QLED performance to 100567 cd·m-2 luminance, 14.3% maximum external quantum efficiency, and 13.1 cd·A-1 maximum current efficiency using traditional device structures after optimizing the film thickness and annealing the temperature. Furthermore, experimental tests reveal that by doping Zr4+ ions, the size of SnO2 NPs will reduce, dispersion will improve, and energy level will shift up. As expected, when using Zr-SnO2 NPs as the ETL, the maximum external quantum efficiency can reach 16.6%, which is close to the state-of-the-art QLEDs based on ZnO ETL. This work opens the door for developing novel, to the best of our knowledge, type ETLs for QLEDs.
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Silva MCR, Castro-Lopes S, Jerônimo AG, Barbosa R, Lins A, Trigueiro P, Viana BC, Araujo FP, Osajima JA, Peña-Garcia RR. Green Synthesis of Er-Doped ZnO Nanoparticles: An Investigation on the Methylene Blue, Eosin, and Ibuprofen Removal by Photodegradation. Molecules 2024; 29:391. [PMID: 38257303 PMCID: PMC10818354 DOI: 10.3390/molecules29020391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/27/2023] [Accepted: 01/08/2024] [Indexed: 01/24/2024] Open
Abstract
We present a study on the green synthesis of undoped and Er-doped ZnO compounds using Mangifera indica gum (MI). A set of tests were conducted to assess the structure of the material. The tests included X-ray diffraction, Raman, and Fourier-transform infrared spectroscopy. Optical properties were studied using diffuse reflectance and photoluminescence. Morphological and textural investigations were done using SEM images and N2 adsorption/desorption. Furthermore, photocatalytic tests were performed with methylene blue (MB), yellow eosin (EY), and the pharmaceutical drug ibuprofen (IBU) under UV irradiation. The study demonstrated that replacing the stabilizing agent with Mangifera indica gum is an effective method for obtaining ZnO nanoparticles. Additionally, the energy gap of the nanoparticles exhibits a slight reduction in value. Photoluminescence studies showed the presence of zinc vacancies and other defects in both samples. In the photocatalytic test, the sample containing Er3+ exhibited a degradation of 99.7% for methylene blue, 81.2% for yellow eosin, and 52.3% for ibuprofen over 120 min. In the presence of methyl alcohol, the degradation of MB and EY dyes is 16.7% and 55.7%, respectively. This suggests that hydroxyl radicals are responsible for the direct degradation of both dyes. In addition, after the second reuse, the degradation rate for MB was 94.08%, and for EY, it was 82.35%. For the third reuse, the degradation rate for MB was 97.15%, and for EY, it was 17%. These results indicate the significant potential of the new semiconductor in environmental remediation applications from an ecological synthesis.
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Affiliation(s)
- Marília C. R. Silva
- Programa de Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina 64049-550, PI, Brazil; (M.C.R.S.); (B.C.V.); (F.P.A.); (J.A.O.)
| | - Samuel Castro-Lopes
- Unidade Acadêmica do Cabo de Santo Agostinho, Programa de Pós-Graduação em Engenharia Física, Universidade Federal Rural de Pernambuco, Cabo de Santo Agostinho 52171-900, PE, Brazil; (S.C.-L.); (A.G.J.); (R.B.); (A.L.); (P.T.)
| | - Aimée G. Jerônimo
- Unidade Acadêmica do Cabo de Santo Agostinho, Programa de Pós-Graduação em Engenharia Física, Universidade Federal Rural de Pernambuco, Cabo de Santo Agostinho 52171-900, PE, Brazil; (S.C.-L.); (A.G.J.); (R.B.); (A.L.); (P.T.)
| | - Ricardo Barbosa
- Unidade Acadêmica do Cabo de Santo Agostinho, Programa de Pós-Graduação em Engenharia Física, Universidade Federal Rural de Pernambuco, Cabo de Santo Agostinho 52171-900, PE, Brazil; (S.C.-L.); (A.G.J.); (R.B.); (A.L.); (P.T.)
| | - Alexsandro Lins
- Unidade Acadêmica do Cabo de Santo Agostinho, Programa de Pós-Graduação em Engenharia Física, Universidade Federal Rural de Pernambuco, Cabo de Santo Agostinho 52171-900, PE, Brazil; (S.C.-L.); (A.G.J.); (R.B.); (A.L.); (P.T.)
| | - Pollyana Trigueiro
- Unidade Acadêmica do Cabo de Santo Agostinho, Programa de Pós-Graduação em Engenharia Física, Universidade Federal Rural de Pernambuco, Cabo de Santo Agostinho 52171-900, PE, Brazil; (S.C.-L.); (A.G.J.); (R.B.); (A.L.); (P.T.)
| | - Bartolomeu C. Viana
- Programa de Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina 64049-550, PI, Brazil; (M.C.R.S.); (B.C.V.); (F.P.A.); (J.A.O.)
| | - Francisca P. Araujo
- Programa de Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina 64049-550, PI, Brazil; (M.C.R.S.); (B.C.V.); (F.P.A.); (J.A.O.)
- Unidade Acadêmica do Cabo de Santo Agostinho, Programa de Pós-Graduação em Engenharia Física, Universidade Federal Rural de Pernambuco, Cabo de Santo Agostinho 52171-900, PE, Brazil; (S.C.-L.); (A.G.J.); (R.B.); (A.L.); (P.T.)
| | - Josy A. Osajima
- Programa de Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina 64049-550, PI, Brazil; (M.C.R.S.); (B.C.V.); (F.P.A.); (J.A.O.)
| | - Ramón R. Peña-Garcia
- Programa de Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina 64049-550, PI, Brazil; (M.C.R.S.); (B.C.V.); (F.P.A.); (J.A.O.)
- Unidade Acadêmica do Cabo de Santo Agostinho, Programa de Pós-Graduação em Engenharia Física, Universidade Federal Rural de Pernambuco, Cabo de Santo Agostinho 52171-900, PE, Brazil; (S.C.-L.); (A.G.J.); (R.B.); (A.L.); (P.T.)
- Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE, Brazil
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Chen J, Tang Z, Zhou Y, Zhang T, Qian L, Xiang C. In-situ solution processed zinc Oxide as electron transport layer for High-performance perovskite Light-emitting diodes. Chem Phys Lett 2023. [DOI: 10.1016/j.cplett.2023.140441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/30/2023]
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