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Jeong HW, Ajay A, Döblinger M, Sturm S, Gómez Ruiz M, Zell R, Mukhundhan N, Stelzner D, Lähnemann J, Müller-Caspary K, Finley JJ, Koblmüller G. Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices. ACS APPLIED NANO MATERIALS 2024; 7:3032-3041. [PMID: 38357219 PMCID: PMC10863613 DOI: 10.1021/acsanm.3c05392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/21/2023] [Accepted: 12/26/2023] [Indexed: 02/16/2024]
Abstract
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region. Structural, compositional, and 3D-tomographic characterizations affirm the desired directional growth along the NW axis with no radial growth observed. Clearly distinct luminescence from the InGaAs active region is demonstrated, where tunable array-geometry parameters and In content up to 20% are further investigated. Based on the underlying twin-induced growth mode, we further describe the facet-dependent shape and interface evolution of the InGaAs segment and its direct correlation with emission energy.
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Affiliation(s)
- Hyowon W. Jeong
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Akhil Ajay
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Markus Döblinger
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Sebastian Sturm
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Mikel Gómez Ruiz
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Richard Zell
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Nitin Mukhundhan
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Daniel Stelzner
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Jonas Lähnemann
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Knut Müller-Caspary
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Jonathan J. Finley
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Gregor Koblmüller
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
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Schmiedeke P, Döblinger M, Meinhold-Heerlein MA, Doganlar C, Finley JJ, Koblmüller G. Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality. NANOTECHNOLOGY 2023; 35:055601. [PMID: 37879325 DOI: 10.1088/1361-6528/ad06ce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
Ternary GaAsSb nanowires (NW) are key materials for integrated high-speed photonic applications on silicon (Si), where homogeneous, high aspect-ratio dimensions and high-quality properties for controlled absorption, mode confinement and waveguiding are much desired. Here, we demonstrate a unique high-temperature (high-T >650 °C) molecular beam epitaxial (MBE) approach to realize self-catalyzed GaAsSb NWs site-selectively on Si with high aspect-ratio and non-tapered morphologies under antimony (Sb)-saturated conditions. While hitherto reported low-moderate temperature growth processes result in early growth termination and inhomogeneous morphologies, the non-tapered nature of NWs under high-T growth is independent of the supply rates of relevant growth species. Analysis of dedicated Ga-flux and growth time series, allows us to pinpoint the microscopic mechanisms responsible for the elimination of tapering, namely concurrent vapor-solid, step-flow growth along NW side-facets enabled by enhanced Ga diffusion under the high-T growth. Performing growth in an Sb-saturated regime, leads to high Sb-content in VLS-GaAsSb NW close to 30% that is independent of Ga-flux. This independence enables multi-step growth via sequentially increased Ga-flux to realize uniform and very long (>7μm) GaAsSb NWs. The excellent properties of these NWs are confirmed by a completely phase-pure, twin-free zincblende (ZB) crystal structure, a homogeneous Sb-content along the VLS-GaAsSb NW growth axis, along with remarkably narrow, single-peak low-temperature photoluminescence linewidth (<15 meV) at wavelengths of ∼1100-1200 nm.
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Affiliation(s)
- P Schmiedeke
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - M Döblinger
- Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany
| | - M A Meinhold-Heerlein
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - C Doganlar
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - J J Finley
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
| | - G Koblmüller
- Walter Schottky Institute and Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching, Germany
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