1
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Meng J, Lee C, Li Z. Adjustment methods of Schottky barrier height in one- and two-dimensional semiconductor devices. Sci Bull (Beijing) 2024; 69:1342-1352. [PMID: 38490891 DOI: 10.1016/j.scib.2024.03.003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 01/10/2024] [Accepted: 02/02/2024] [Indexed: 03/17/2024]
Abstract
The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal-semiconductor interface. Controlling or adjusting Schottky barrier height (SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nano-semiconductor devices. These methods encompass the work function of the metals, interface gap states, surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.
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Affiliation(s)
- Jianping Meng
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore; Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore 117608, Singapore.
| | - Zhou Li
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
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2
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Yue D, Tang C, Wu J, Luo X, Chen H, Qian Y. Potassium hydroxide treatment of layered WSe 2 with enhanced electronic performances. NANOSCALE 2024; 16:8345-8351. [PMID: 38606457 DOI: 10.1039/d3nr05432b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/13/2024]
Abstract
2D WSe2-based electronic devices have received much research interest. However, it is still a challenge to achieve high electronic performance in WSe2-based devices. In this work, we report greatly enhanced performances of different thickness WSe2 ambipolar transistors and demonstrate homogeneous WSe2 inverter devices, which are obtained by using a semiconductor processing-compatible layer removal technique via chemical removal of the surface top WOx layer formed by O2 plasma treatment. Importantly, monolayer WSe2 was realised after several consecutive removal processes, demonstrating that the single layer removal is accurate and reliable. After subsequent removal of the top layer WOx by KOH, the fabricated WSe2 field-effect transistors exhibit greatly enhanced electronic performance along with the high electron and hole mobilities of 40 and 85 cm2 V-1 s-1, respectively. Our work demonstrates that the layer removal technique is an efficient route to fabricate high performance 2D material-based electronic devices.
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Affiliation(s)
- Dewu Yue
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, P. R. China
| | - Cheng Tang
- Graduate School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, Korea
| | - Jiajing Wu
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen, 518172, P. R. China
| | - Xiaohui Luo
- College of Pharmacy, Jinhua Polytechnic, Jinhua, Zhejiang Province, 321007, P. R. China.
| | - Hongyu Chen
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, P. R. China.
| | - Yongteng Qian
- College of Pharmacy, Jinhua Polytechnic, Jinhua, Zhejiang Province, 321007, P. R. China.
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3
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Song J, Lee S, Seok Y, Ko Y, Jang H, Watanabe K, Taniguchi T, Lee K. Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS 2. ACS NANO 2024; 18:4320-4328. [PMID: 38277645 DOI: 10.1021/acsnano.3c09876] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
Applying a drain bias to a strongly gate-coupled semiconductor influences the carrier density of the channel. However, practical applications of this drain-bias-induced effect in the advancement of switching electronics have remained elusive due to the limited capabilities of its current modulation known to date. Here, we show strategies to largely control the current by utilizing drain-bias-induced carrier type switching in an ambipolar molybdenum disulfide (MoS2) field-effect transistor with Pt bottom contacts. Our CMOS-compatible device architecture, incorporating a partially gate-coupled p-n junction, achieves multifunctionality. The ambipolar MoS2 device operates as an ambipolar transistor (on/off ratios exceeding 107 for both NMOS and PMOS), a rectifier (rectification ratio of ∼3 × 106), a reversible negative breakdown diode with an adjustable breakdown voltage (on/off ratio exceeding 109 with a maximum current as high as 10-4 A), and a photodetector. Finally, we demonstrate a complementary inverter (gain of ∼24 at Vdd = 1.5 V), which is highly facile to fabricate without the need for complex heterostructures and doping processes. Our study provides strategies to achieve high-performance ambipolar MoS2 devices and to effectively utilize drain bias for electrical switching.
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Affiliation(s)
- Jungi Song
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Suyeon Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Yongwook Seok
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Yeonghyeon Ko
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Hanbyeol Jang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kayoung Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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4
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Ram A, Maity K, Marchand C, Mahmoudi A, Kshirsagar AR, Soliman M, Taniguchi T, Watanabe K, Doudin B, Ouerghi A, Reichardt S, O'Connor I, Dayen JF. Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits. ACS NANO 2023; 17:21865-21877. [PMID: 37864568 DOI: 10.1021/acsnano.3c07952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2023]
Abstract
Emerging reconfigurable devices are fast gaining popularity in the search for next-generation computing hardware, while ferroelectric engineering of the doping state in semiconductor materials has the potential to offer alternatives to traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate the suitability of reconfigurable ferroelectric field-effect transistors (Re-FeFETs) for designing nonvolatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe2) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP2S6) layer. Controlling the state encoded in the program gate enables switching between p, n, and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 106 and hysteresis windows of up to 10 V width. The homojunction can change from Ohmic-like to diode behavior with a large rectification ratio of 104. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy-harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with a long retention time exceeding 104 s. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key nonvolatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates high compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit promising potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.
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Affiliation(s)
- Ankita Ram
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Krishna Maity
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Cédric Marchand
- École Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully 69134, France
| | - Aymen Mahmoudi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Aseem Rajan Kshirsagar
- Department of Physics and Materials Science, University of Luxembourg, Luxembourg 1511, Luxembourg
| | - Mohamed Soliman
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Bernard Doudin
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Sven Reichardt
- Department of Physics and Materials Science, University of Luxembourg, Luxembourg 1511, Luxembourg
| | - Ian O'Connor
- École Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully 69134, France
| | - Jean-Francois Dayen
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France
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5
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Zhao J, Tong L, Niu J, Fang Z, Pei Y, Zhou Z, Sun Y, Wang Z, Wang H, Lou J, Yan X. A bidirectional thermal sensory leaky integrate-and-fire (LIF) neuron model based on bipolar NbO x volatile threshold devices with ultra-low operating current. NANOSCALE 2023; 15:17599-17608. [PMID: 37874690 DOI: 10.1039/d3nr03034b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Brain-like artificial intelligence (AI) will become the main form and important platform in future computing. It will play an important and unique role in simulating brain functions, efficiently implementing AI algorithms, and improving computing power. Developing artificial neurons that can send facilitation/depression signals to artificial synapses, sense, and process temperature information is of great significance for achieving more efficient and compact brain-like computing systems. Herein, we have constructed a NbOx bipolar volatile threshold memristor, which could be operated by 1 μA ultra-low current and up to ∼104 switching ratios. By using a leaky integrate-and-fire (LIF) artificial neuron model, a bipolar LIF artificial neuron is constructed, which can realize the conventional threshold-driven firing, all-or-nothing spiking, refractory periods, and intensity-modulated frequency response bidirectionally at the positive/negative voltage stimulation, which will give the artificial synapse facilitation/depression signals. Furthermore, this bipolar LIF neuron can also explore different temperatures to output different signals, which could be constructed as a more compact thermal sensory neuron to avoid external harm to artificial robots. This study is of great significance for improving the computational efficiency of the system more effectively, achieving high integration density and low energy consumption artificial neural networks to meet the needs of brain-like neural computing.
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Affiliation(s)
- Jianhui Zhao
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Liang Tong
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Jiangzhen Niu
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Ziliang Fang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Yifei Pei
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China
| | - Zhenyu Zhou
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Yong Sun
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Zhongrong Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Hong Wang
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Jianzhong Lou
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
| | - Xiaobing Yan
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China.
- Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding 071002, China
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6
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Zhou Y, Tong L, Chen Z, Tao L, Pang Y, Xu JB. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun 2023; 14:4270. [PMID: 37460531 DOI: 10.1038/s41467-023-39705-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/26/2023] [Indexed: 07/20/2023] Open
Abstract
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10-5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10-6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.
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Affiliation(s)
- Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Zefeng Chen
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 215006, Suzhou, China
| | - Li Tao
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China.
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7
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Sheng Z, Dong J, Hu W, Wang Y, Sun H, Zhang DW, Zhou P, Zhang Z. Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor. NANO LETTERS 2023. [PMID: 37235483 DOI: 10.1021/acs.nanolett.3c01248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected to extend Moore's law toward advanced nodes. Here we demonstrate that a WSe2/h-BN/graphene based middle-floating-gate field-effect transistor can perform under diverse current levels due to the controllable polarity by the control gate, floating gate, and drain voltages. Such electrical tunable characteristics are employed for logic-in-memory architectures and can behave as reconfigurable logic functions of AND/XNOR within a single device. Compared to the conventional devices like floating-gate field-effect transistors, our design can greatly decrease the consumption of transistors. For AND/NAND, it can save 75% transistors by reducing the transistor number from 4 to 1; for XNOR/XOR, it is even up to 87.5% with the number being reduced from 8 to 1.
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Affiliation(s)
- Zhe Sheng
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jianguo Dong
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wennan Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yue Wang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haoran Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David Wei Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Peng Zhou
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Zengxing Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
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8
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Hu W, Wang H, Dong J, Sun H, Wang Y, Sheng Z, Zhang Z. Chemical Dopant-Free Controlled MoTe 2/MoSe 2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18182-18190. [PMID: 36987733 DOI: 10.1021/acsami.2c21785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe2/MoSe2 p-n heterojunction, in which the hole-dominated transport polarity of MoTe2 is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W-1, an external quantum efficiency up to 41.3%, a detectivity of 7 × 1011 Jones, and a response speed of 120 μs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe2 and n-MoSe2 on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jianguo Dong
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haoran Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yue Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No. 825 Zhangheng Road, Shanghai 201203, China
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9
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Zhang G, Lu G, Li X, Mei Z, Liang L, Fan S, Li Q, Wei Y. Reconfigurable Two-Dimensional Air-Gap Barristors. ACS NANO 2023; 17:4564-4573. [PMID: 36847653 DOI: 10.1021/acsnano.2c10593] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar semiconductors provide a prospective solution for the post-Moore era. It is still a challenge for ambipolar nanomaterials to realize reconfigurable polarity control and rectification with a simplified device structure. Here, an air-gap barristor based on an asymmetric stacking sequence of the electrode contacts was developed to resolve these issues. For the 2D ambipolar channel of WSe2, the barristor can not only be reconfigured as an n- or p-type unipolar transistor but also work as a switchable diode. The air gap around the bottom electrode dominates the reconfigurable behaviors by widening the Schottky barrier here, thus blocking the injection of both electrons and holes. The electrical performances can be improved by optimizing the electrode materials, which achieve an on/off ratio of 104 for the transistor and a rectifying ratio of 105 for the diode. A complementary inverter and a switchable AND/OR logic gate were constructed by using the air-gap barristors as building blocks. This work provides an efficient approach with great potential for low-dimensional reconfigurable electronics.
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Affiliation(s)
- Guangqi Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Gaotian Lu
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Xuanzhang Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Zhen Mei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Liang Liang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
| | - Yang Wei
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
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10
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Lee M, Kim TW, Park CY, Lee K, Taniguchi T, Watanabe K, Kim MG, Hwang DK, Lee YT. Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications. NANO-MICRO LETTERS 2022; 15:22. [PMID: 36580180 PMCID: PMC9800667 DOI: 10.1007/s40820-022-01001-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 12/11/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
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Affiliation(s)
- Minjong Lee
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Tae Wook Kim
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Chang Yong Park
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea
| | - Kimoon Lee
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Min-Gu Kim
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea.
- Department of Information and Communication Engineering, Inha University, Incheon, 22212, Republic of Korea.
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea.
| | - Young Tack Lee
- Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea.
- Department of Electronic Engineering, Inha University, Incheon, 22212, Republic of Korea.
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11
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2D Materials towards sensing technology: From fundamentals to applications. SENSING AND BIO-SENSING RESEARCH 2022. [DOI: 10.1016/j.sbsr.2022.100540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 11/06/2022] Open
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12
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 55] [Impact Index Per Article: 27.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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13
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Liu X, Sun B, Huang K, Feng C, Li X, Zhang Z, Wang W, Zhang X, Huang Z, Liu H, Chang H, Jia R, Liu H. Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate. ACS OMEGA 2022; 7:8819-8823. [PMID: 35309449 PMCID: PMC8928521 DOI: 10.1021/acsomega.1c07088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2021] [Accepted: 02/21/2022] [Indexed: 06/14/2023]
Abstract
As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder and encrypted circuits. Here, we suggest that using the ambipolar property of carbon nanotubes and the threshold modulation ability of dual-gate field-effect transistors, an XOR gate can be constructed in only one transistor. For a traditional XOR gate, 4 to 6 transistors are needed, and this low-footprint topology could be employed in the future for hyperscaling and three-dimensional logic and memory transistor integration.
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Affiliation(s)
- Xueyuan Liu
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Bing Sun
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Kailiang Huang
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Feng
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiao Li
- University
of Chinese Academy of Sciences, Beijing 100049, China
- Beijing
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhen Zhang
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenke Wang
- University
of Chinese Academy of Sciences, Beijing 100049, China
- Beijing
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xin’gang Zhang
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhi Huang
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Huaping Liu
- University
of Chinese Academy of Sciences, Beijing 100049, China
- Beijing
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hudong Chang
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Rui Jia
- Key
Laboratory of Microelectronic Devices & Integrated Technology,
Institute of Microelectronics, Chinese Academy
of Sciences, Beijing 100029, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Honggang Liu
- Department
of Electronics, Peking University, Beijing 100871, China
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Zhao Z, Rakheja S, Zhu W. Nonvolatile Reconfigurable 2D Schottky Barrier Transistors. NANO LETTERS 2021; 21:9318-9324. [PMID: 34677980 DOI: 10.1021/acs.nanolett.1c03557] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact logic circuits with low power consumption in maintaining the configuration. In this paper, we build nonvolatile reconfigurable transistors based on 2D CuInP2S6/MoTe2 heterostructures. The ferroelectric polarization-induced electron and hole doping in the heterostructure are investigated. By introducing the ferroelectric doping into the source/drain contacts, we demonstrate reconfigurable Schottky barrier transistors, whose polarity (n-type or p-type) can be dynamically programmed, where the configuration is nonvolatile in nature. These transistors exhibit a tunable photoresponse, where the n-n doping state leads to negative photocurrent, whereas the p-p doping state gives rise to a positive photocurrent. The transistor with asymmetric (n-p or p-n) contacts exhibits a strong photovoltaic effect. These reconfigurable logic and optoelectronic transistors will enable a new type of device fabric for future computing systems and sensing networks.
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Affiliation(s)
- Zijing Zhao
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Shaloo Rakheja
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Wenjuan Zhu
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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