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Ren X, Wang S, Cai H, Qiu P, Wang Q, Lu X, Gao X, Shui L, Wu S, Liu JM. Multifunctional Acetaminophen Interlayer for High Efficiency and Durability Lead-Lean Perovskite Solar Cells. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024. [PMID: 39264301 DOI: 10.1021/acs.langmuir.4c01681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/13/2024]
Abstract
Due to the easy oxidation of Sn2+, which leads to form tin vacancy defects and poor perovskite film quality, caused by the rapid crystallization rate in tin-based perovskite solar cells (PSCs), their efficiency lags far behind that of lead-based PSCs. To improve the photovoltaic (PV) performance and stability of FA0.9PEA0.1SnI3-based PSCs (T-PSCs), a small amount of Pb(SCN)2 is introduced into a perovskite precursor as an antioxidant, and acetaminophen (ACE) with various functional groups is used to modify a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/perovskite interface. The results show that the Pb(SCN)2 additive and ACE interfacial modification can not only optimize energy level alignment in T-PSCs but also inhibit Sn2+ oxidation to reduce the trap-state density, resulting in promoted carrier transport. The synergetic effect of the Pb(SCN)2 antioxidant and ACE interfacial modification significantly reduces nonradiative recombination and improves the PV performance and stability of T-PSCs. Consequently, the unsealed T-PSCs with the Pb(SCN)2 additive and ACE modification achieve a champion efficiency of 12.04% and maintain 99% of their initial PCE after being stored in N2 for more than 2100 h, while reference T-PSCs demonstrate a champion PCE of 6.20% and retain only 72% of its initial PCE. Moreover, the modified T-PSCs without encapsulation demonstrate much better stability in humid air.
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Affiliation(s)
- Xuefei Ren
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Shuqi Wang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Hengzhuo Cai
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Peng Qiu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Qiwei Wang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xubing Lu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Lingling Shui
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Sujuan Wu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Jun-Ming Liu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
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Fei H, Shang C, Sang D, Li C, Ge S, Zou L, Wang Q. Application of Strain Engineering in Solar Cells. Molecules 2024; 29:3260. [PMID: 39064839 PMCID: PMC11278694 DOI: 10.3390/molecules29143260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/12/2024] [Revised: 06/24/2024] [Accepted: 07/08/2024] [Indexed: 07/28/2024] Open
Abstract
Solar cells represent a promising innovation in energy storage, offering not only exceptional cleanliness and low cost but also a high degree of flexibility, rendering them widely applicable. In recent years, scientists have dedicated substantial efforts to enhancing the performance of solar cells, aiming to drive sustainable development and promote clean energy applications. One approach that has garnered significant attention is strain engineering, which involves the adjustment of material microstructure and organization through mechanical tensile or compressive strain, ultimately serving to enhance the mechanical properties and performance stability of materials. This paper aims to provide a comprehensive review of the latest advancements in the application of strain engineering in solar cells, focused on the current hot research area-perovskite solar cells. Specifically, it delves into the origins and characterization of strain in solar cells, the impact of strain on solar cell performance, and the methods for regulating stable strain. Furthermore, it outlines strategies for enhancing the power conversion efficiency (PCE) and stability of solar cells through strain engineering. Finally, the paper conducts an analysis of the challenges encountered in the development process and presents a forward-looking perspective on further enhancing the performance of solar cells through strain engineering.
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Affiliation(s)
| | | | - Dandan Sang
- School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China; (H.F.); (C.S.); (C.L.); (S.G.); (L.Z.)
| | | | | | | | - Qinglin Wang
- School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China; (H.F.); (C.S.); (C.L.); (S.G.); (L.Z.)
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Hu S, Thiesbrummel J, Pascual J, Stolterfoht M, Wakamiya A, Snaith HJ. Narrow Bandgap Metal Halide Perovskites for All-Perovskite Tandem Photovoltaics. Chem Rev 2024; 124:4079-4123. [PMID: 38527274 PMCID: PMC11009966 DOI: 10.1021/acs.chemrev.3c00667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 03/07/2024] [Accepted: 03/15/2024] [Indexed: 03/27/2024]
Abstract
All-perovskite tandem solar cells are attracting considerable interest in photovoltaics research, owing to their potential to surpass the theoretical efficiency limit of single-junction cells, in a cost-effective sustainable manner. Thanks to the bandgap-bowing effect, mixed tin-lead (Sn-Pb) perovskites possess a close to ideal narrow bandgap for constructing tandem cells, matched with wide-bandgap neat lead-based counterparts. The performance of all-perovskite tandems, however, has yet to reach its efficiency potential. One of the main obstacles that need to be overcome is the─oftentimes─low quality of the mixed Sn-Pb perovskite films, largely caused by the facile oxidation of Sn(II) to Sn(IV), as well as the difficult-to-control film crystallization dynamics. Additional detrimental imperfections are introduced in the perovskite thin film, particularly at its vulnerable surfaces, including the top and bottom interfaces as well as the grain boundaries. Due to these issues, the resultant device performance is distinctly far lower than their theoretically achievable maximum efficiency. Robust modifications and improvements to the surfaces of mixed Sn-Pb perovskite films are therefore critical for the advancement of the field. This Review describes the origins of imperfections in thin films and covers efforts made so far toward reaching a better understanding of mixed Sn-Pb perovskites, in particular with respect to surface modifications that improved the efficiency and stability of the narrow bandgap solar cells. In addition, we also outline the important issues of integrating the narrow bandgap subcells for achieving reliable and efficient all-perovskite double- and multi-junction tandems. Future work should focus on the characterization and visualization of the specific surface defects, as well as tracking their evolution under different external stimuli, guiding in turn the processing for efficient and stable single-junction and tandem solar cell devices.
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Affiliation(s)
- Shuaifeng Hu
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Jarla Thiesbrummel
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
- Institute
for Physics and Astronomy, University of
Potsdam,14476 Potsdam-Golm, Germany
| | - Jorge Pascual
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
- Polymat, University of the
Basque Country UPV/EHU, 20018 Donostia-San
Sebastian, Spain
| | - Martin Stolterfoht
- Institute
for Physics and Astronomy, University of
Potsdam,14476 Potsdam-Golm, Germany
- Electronic
Engineering Department, The Chinese University
of Hong Kong, Hong Kong 999077, SAR China
| | - Atsushi Wakamiya
- Institute
for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Henry J. Snaith
- Clarendon
Laboratory, Department of Physics, University
of Oxford, Oxford OX1 3PU, United
Kingdom
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Zhang T, Qian F, Zhai Y, Li J, Wang L, Diao Z, Yuan S, Zheng H, Wang Y, Gong Y, Chen ZD, Li S. Ammonium Additive Engineering in Antisolvents for Improving Perovskite/Charge-Transport-Layer Interfaces toward Efficient Lead-Tin Alloyed Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:13763-13772. [PMID: 38379180 DOI: 10.1021/acsami.3c19237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Although significant advancements have been achieved in lead-tin (Pb-Sn) alloyed perovskite solar cells (PSCs), their power conversion efficiency (PCE) remains inferior to that of their Pb-based counterparts, primarily due to higher open-circuit voltage (Voc) losses and lower fill factors (FFs). Herein, we report both perovskite top and bottom interfacial improvements by incorporating a facile fluorophenylethylammonium iodide (p-FPEAI)/ethyl acetate (EA) solution during the film crystal growth. Based on the analysis of perovskite crystallization, film growth, and strain relaxation, the mechanisms behind these interfacial improvements have been well understood. Furthermore, p-FPEAI could reduce the defect density and nonradiative recombination losses, thus attributing to the improved Voc and FF. Finally, the treated device achieved a PCE of 20.14% with a Voc of up to 0.84 V, which is among the highest reported values so far for Pb-Sn alloyed PSCs without additional precursor additives. In addition, the unencapsulated p-FPEAI-treated device maintained its initial efficiency of approximately 92% after being kept in a nitrogen atmosphere for 1 month, in contrast to the control device which retained only 30% of its initial value. Our findings provide a comprehension for understanding the effect of bulky cations as antisolvents on fabricating highly efficient Pb-Sn alloyed perovskite solar cells.
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Affiliation(s)
- Ting Zhang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Feng Qian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yahui Zhai
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jian Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Lei Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zecheng Diao
- College of Electronic Engineering, Guangzhou University, Guangzhou 510006, China
| | - Shihao Yuan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Hualin Zheng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yafei Wang
- College of Electronic Engineering, Guangzhou University, Guangzhou 510006, China
| | - Yanli Gong
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- School of Mechanical and Electrical Engineering, Chengdu University of Information Technology, Chengdu 610225, China
| | - Zhi David Chen
- Department of Electrical & Computer Engineering and Center for Nanoscale Science & Engineering, University of Kentucky, Lexington, Kentucky 40506, United States
| | - Shibin Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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