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Guo H, Jia C, Yao Y, Bai M, Ma T, Zhang J, Xia J, Nie H, Yao B, He J, Zhang B. Nonlinear Optical Saturable Absorption Properties of 2D VP Nanosheets and Application as SA in a Passively Q-Switched Nd:YVO 4 Laser. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2585. [PMID: 38893849 PMCID: PMC11174069 DOI: 10.3390/ma17112585] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 05/21/2024] [Accepted: 05/25/2024] [Indexed: 06/21/2024]
Abstract
Two-dimensional (2D) violet phosphorus (VP) plays a significant role in the applications of photonic and optoelectronic devices due to its unique optical and electrical properties. The ultrafast carrier dynamics and nonlinear optical absorption properties were systematically investigated here. The intra- and inter-band ultrafast relaxation times of 2D VP nanosheets were measured to be ~6.83 ps and ~62.91 ps using the pump-probe method with a probe laser operating at 1.03 μm. The nonlinear absorption coefficient βeff, the saturation intensity Is, the modulation depth ΔR, and the nonsaturable loss were determined to be -2.18 × 104 cm/MW, 329 kW/cm2, 6.3%, and 9.8%, respectively, by using the Z-scan and I-scan methods, indicating the tremendous saturable absorption property of 2D VP nanosheets. Furthermore, the passively Q-switched Nd:YVO4 laser was realized with the 2D VP nanosheet-based SA, in which the average output power of 700 mW and the pulse duration of 478 ns were obtained. These results effectively reveal the nonlinear optical absorption characteristics of VP nanosheets, demonstrating their outstanding light-manipulating capabilities and providing a basis for the applications of ultrafast optical devices. Our results verify the excellent saturable absorption properties of 2D VP, paving the way for its applications in pulsed laser generation.
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Affiliation(s)
- Haowen Guo
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Chunyan Jia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Yongping Yao
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Meng Bai
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Tiejun Ma
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Jiayu Zhang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Jinbao Xia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Hongkun Nie
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Bo Yao
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
| | - Jingliang He
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
- Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China
| | - Baitao Zhang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
- Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China
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Xiao Y, Zou G, Huo J, Sun T, Peng J, Li Z, Shen D, Liu L. Local modulation of Au/MoS 2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection. NANOSCALE HORIZONS 2024; 9:285-294. [PMID: 38063807 DOI: 10.1039/d3nh00448a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.
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Affiliation(s)
- Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi Province, China
| | - Jin Peng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Zehua Li
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
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Serebrennikova SI, Kopylova DS, Gladush YG, Krasnikov DV, Mailis S, Nasibulin AG. Photogating interfacial effects in carbon nanotube-based transistors on a Si/SiO 2 substrate toward highly sensitive photodetection. NANOSCALE 2023; 15:19351-19358. [PMID: 38013470 DOI: 10.1039/d3nr04451c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Single-walled carbon nanotubes (SWCNTs) are considered to be promising material platforms for various photodetectors (including phototransistors) due to their unique optoelectrical properties (e.g., high mobility and a wide variety of bandgap values). Herein, we present highly sensitive phototransistors which utilised sparse networks of SWCNTs on a silicon/silica substrate and operated by means of the photogating effect. The response of SWCNTs to photo-induced electrostatic charges (photogating effect) was highly dependent on the conductivity type of the channel, which was "metallic" or "semiconducting", depending on the SWCNT density. We determined the performance of these transistors depending on the characteristics of the substrate and conductivity type of the SWCNT channel. The optimized configuration of phototransistors with a channel comprising a sparse network of SWCNTs permitted improvement in the specific detectivity and relative response compared with previously reported photodetectors based on graphene and carbon nanotubes. We demonstrated an absolute responsivity of ∼60 A W-1 at an incident light power of ∼2 nW, specific detectivity of 7.8 × 1011 cm·Hz1/2 W-1, and response time of 300 μs. These data revealed the high potential of photogating-based SWCNTs detectors for extremely weak signals with a high signal-to-noise ratio.
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Affiliation(s)
| | - Daria S Kopylova
- Skolkovo Institute of Science and Technology, Nobel 3, 121205, Moscow, Russia.
| | - Yuriy G Gladush
- Skolkovo Institute of Science and Technology, Nobel 3, 121205, Moscow, Russia.
| | - Dmitry V Krasnikov
- Skolkovo Institute of Science and Technology, Nobel 3, 121205, Moscow, Russia.
| | - Sakellaris Mailis
- Skolkovo Institute of Science and Technology, Nobel 3, 121205, Moscow, Russia.
| | - Albert G Nasibulin
- Skolkovo Institute of Science and Technology, Nobel 3, 121205, Moscow, Russia.
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Liu C, Vella J, Eedugurala N, Mahalingavelar P, Bills T, Salcido‐Santacruz B, Sfeir MY, Azoulay JD. Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2304077. [PMID: 37888896 PMCID: PMC10754133 DOI: 10.1002/advs.202304077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 09/04/2023] [Indexed: 10/28/2023]
Abstract
Photodetectors operating across the short-, mid-, and long-wave infrared (SWIR-LWIR, λ = 1-14 µm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution-processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR-LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity (D*, the figure of merit for detector sensitivity) >2.44 × 109 Jones (cm Hz1/2 W-1 ) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow-bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.
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Affiliation(s)
- Chih‐Ting Liu
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Jarrett Vella
- Sensor DirectorateAir Force Research LaboratoryWright‐Patterson Air Force BaseDaytonOH45433USA
| | - Naresh Eedugurala
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Paramasivam Mahalingavelar
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Tyler Bills
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Bernardo Salcido‐Santacruz
- Photonics InitiativeAdvanced Science Research CenterCity University of New YorkNew YorkNY10031USA
- Department of ChemistryThe Graduate CenterCity University of New YorkNew YorkNY10016USA
| | - Matthew Y. Sfeir
- Photonics InitiativeAdvanced Science Research CenterCity University of New YorkNew YorkNY10031USA
- Department of ChemistryThe Graduate CenterCity University of New YorkNew YorkNY10016USA
- Department of PhysicsThe Graduate CenterCity University of New YorkNew YorkNY10016USA
| | - Jason D. Azoulay
- School of Chemistry and Biochemistry and School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
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Al-Amri AM. Recent Progress in Printed Photonic Devices: A Brief Review of Materials, Devices, and Applications. Polymers (Basel) 2023; 15:3234. [PMID: 37571128 PMCID: PMC10422352 DOI: 10.3390/polym15153234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Revised: 07/26/2023] [Accepted: 07/27/2023] [Indexed: 08/13/2023] Open
Abstract
Printing electronics incorporates several significant technologies, such as semiconductor devices produced by various printing techniques on flexible substrates. With the growing interest in printed electronic devices, new technologies have been developed to make novel devices with inexpensive and large-area printing techniques. This review article focuses on the most recent developments in printed photonic devices. Photonics and optoelectronic systems may now be built utilizing materials with specific optical properties and 3D designs achieved through additive printing. Optical and architected materials that can be printed in their entirety are among the most promising future research topics, as are platforms for multi-material processing and printing technologies that can print enormous volumes at a high resolution while also maintaining a high throughput. Significant advances in innovative printable materials create new opportunities for functional devices to act efficiently, such as wearable sensors, integrated optoelectronics, and consumer electronics. This article provides an overview of printable materials, printing methods, and the uses of printed electronic devices.
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Affiliation(s)
- Amal M Al-Amri
- Physics Department, Collage of Science & Arts, King Abdulaziz University, Rabigh 25724, Saudi Arabia
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Yang J, Yang Q, Zhang Y, Wei X, Shi H. Graphene nanowalls in photodetectors. RSC Adv 2023; 13:22838-22862. [PMID: 37520101 PMCID: PMC10375065 DOI: 10.1039/d3ra03104g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Accepted: 07/06/2023] [Indexed: 08/01/2023] Open
Abstract
Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors. We begin by outlining the growth mechanisms and methods of GNWs, followed by a discussion on their physical properties. Next, we categorize and analyze the latest research progress in GNW photodetectors, focusing on photovoltaic, photoconductive, and photothermal detectors. Lastly, we offer a summary and outlook, identifying potential challenges and outlining industry development directions. This review serves as a valuable reference for researchers and industry professionals in understanding and exploring the opportunities of GNW materials in photodetection.
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Affiliation(s)
- Jun Yang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Qi Yang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Yongna Zhang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
| | - Haofei Shi
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences Chongqing 400714 P. R. China
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